JP2013074007A - 熱処理方法 - Google Patents
熱処理方法 Download PDFInfo
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- JP2013074007A JP2013074007A JP2011210388A JP2011210388A JP2013074007A JP 2013074007 A JP2013074007 A JP 2013074007A JP 2011210388 A JP2011210388 A JP 2011210388A JP 2011210388 A JP2011210388 A JP 2011210388A JP 2013074007 A JP2013074007 A JP 2013074007A
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- Prior art keywords
- semiconductor wafer
- flash
- heat treatment
- temperature
- chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
Abstract
【解決手段】保持部7の均熱リング74に支持された半導体ウェハーWの上面にフラッシュランプから第1のフラッシュ光照射を行うことによって、半導体ウェハーWを均熱リング74から跳躍させて浮上させている。そして、半導体ウェハーWが均熱リング74から浮上している間に、フラッシュランプから半導体ウェハーWの上面に第2のフラッシュ光照射を行い、その半導体ウェハーWの上面の温度を処理温度にまで昇温している。半導体ウェハーWが浮上して何らの拘束も受けていない状態で第2のフラッシュ光照射が行われるため、半導体ウェハーWの割れを防止することができる。
【選択図】図12
Description
2 シャッター機構
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
21 シャッター板
22 スライド駆動機構
31 パルス発生器
32 波形設定部
33 入力部
61 チャンバー側部
62 凹部
63 上側チャンバー窓
64 下側チャンバー窓
65 熱処理空間
74 均熱リング
91 トリガー電極
92 ガラス管
93 コンデンサ
94 コイル
96 IGBT
97 トリガー回路
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (2)
- 基板に対してフラッシュ光を照射することによって該基板を加熱する熱処理方法であって、
支持部材にて基板を支持する支持工程と、
前記支持部材に支持された基板の上面に第1のフラッシュ光を照射することによって、前記基板を前記支持部材から跳躍させる跳躍工程と、
前記基板が跳躍して前記支持部材から浮上している間に、前記基板の上面に第2のフラッシュ光を照射して加熱処理を行う加熱工程と、
を備えることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記第1のフラッシュ光の強度は前記第2のフラッシュ光の強度よりも小さいことを特徴とする熱処理方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011210388A JP5944131B2 (ja) | 2011-09-27 | 2011-09-27 | 熱処理方法 |
TW101130544A TWI496215B (zh) | 2011-09-27 | 2012-08-22 | 熱處理方法 |
US13/603,584 US8802550B2 (en) | 2011-09-27 | 2012-09-05 | Heat treatment method for heating substrate by irradiating substrate with flash of light |
KR1020120099151A KR101389636B1 (ko) | 2011-09-27 | 2012-09-07 | 열처리 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011210388A JP5944131B2 (ja) | 2011-09-27 | 2011-09-27 | 熱処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013074007A true JP2013074007A (ja) | 2013-04-22 |
JP5944131B2 JP5944131B2 (ja) | 2016-07-05 |
Family
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Family Applications (1)
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JP2011210388A Active JP5944131B2 (ja) | 2011-09-27 | 2011-09-27 | 熱処理方法 |
Country Status (4)
Country | Link |
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US (1) | US8802550B2 (ja) |
JP (1) | JP5944131B2 (ja) |
KR (1) | KR101389636B1 (ja) |
TW (1) | TWI496215B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11089657B2 (en) * | 2015-03-06 | 2021-08-10 | SCREEN Holdings Co., Ltd. | Light-irradiation heat treatment apparatus |
JP6587955B2 (ja) * | 2016-02-24 | 2019-10-09 | 株式会社Screenホールディングス | 熱処理装置 |
JP6254748B1 (ja) * | 2016-11-14 | 2017-12-27 | 信越化学工業株式会社 | 高光電変換効率太陽電池の製造方法及び高光電変換効率太陽電池 |
JP7009102B2 (ja) * | 2017-07-27 | 2022-01-25 | 株式会社Screenホールディングス | 熱処理装置の排気方法 |
JP6942615B2 (ja) * | 2017-11-20 | 2021-09-29 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
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JP2007184625A (ja) * | 2007-02-13 | 2007-07-19 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
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JP2003289049A (ja) | 2002-03-28 | 2003-10-10 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
US6849831B2 (en) | 2002-03-29 | 2005-02-01 | Mattson Technology, Inc. | Pulsed processing semiconductor heating methods using combinations of heating sources |
KR20050038763A (ko) | 2003-10-22 | 2005-04-29 | 삼성전자주식회사 | 급속열처리장치 |
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2011
- 2011-09-27 JP JP2011210388A patent/JP5944131B2/ja active Active
-
2012
- 2012-08-22 TW TW101130544A patent/TWI496215B/zh active
- 2012-09-05 US US13/603,584 patent/US8802550B2/en active Active
- 2012-09-07 KR KR1020120099151A patent/KR101389636B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
TW201314777A (zh) | 2013-04-01 |
KR101389636B1 (ko) | 2014-04-29 |
JP5944131B2 (ja) | 2016-07-05 |
TWI496215B (zh) | 2015-08-11 |
US20130078822A1 (en) | 2013-03-28 |
KR20130033957A (ko) | 2013-04-04 |
US8802550B2 (en) | 2014-08-12 |
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