JP6647892B2 - 熱処理用サセプタおよび熱処理装置 - Google Patents
熱処理用サセプタおよび熱処理装置 Download PDFInfo
- Publication number
- JP6647892B2 JP6647892B2 JP2016018849A JP2016018849A JP6647892B2 JP 6647892 B2 JP6647892 B2 JP 6647892B2 JP 2016018849 A JP2016018849 A JP 2016018849A JP 2016018849 A JP2016018849 A JP 2016018849A JP 6647892 B2 JP6647892 B2 JP 6647892B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- heat treatment
- substrate
- flash
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 title claims description 119
- 239000000758 substrate Substances 0.000 claims description 81
- 230000002093 peripheral effect Effects 0.000 claims description 23
- 230000001678 irradiating effect Effects 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 description 170
- 229910052736 halogen Inorganic materials 0.000 description 62
- 150000002367 halogens Chemical class 0.000 description 62
- 238000012546 transfer Methods 0.000 description 56
- 239000007789 gas Substances 0.000 description 35
- 230000007246 mechanism Effects 0.000 description 33
- 239000012535 impurity Substances 0.000 description 19
- 239000010453 quartz Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 230000005855 radiation Effects 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 12
- 229910052724 xenon Inorganic materials 0.000 description 11
- 229910001873 dinitrogen Inorganic materials 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 238000000137 annealing Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Description
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
65 熱処理空間
71 基台リング
72 連結部
74 サセプタ
75 保持プレート
75a 保持面
76 ガイドリング
77 基板支持ピン
120 放射温度計
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (4)
- フラッシュランプから基板にフラッシュ光を照射することによって該基板の熱処理を行うときに該基板を保持する熱処理用サセプタであって、
平面状の保持面を有する保持プレートと、
前記保持面上に立設され、上端にて前記基板の下面に接触して前記基板を支持する複数の支持ピンと、
を備え、
前記複数の支持ピンは、前記フラッシュランプから前記基板の上面にフラッシュ光を照射して当該上面が最高温度に到達したときに、前記基板の下面に作用する応力がゼロとなる位置のみに接触するように前記保持面上に立設されることを特徴とする熱処理用サセプタ。 - 請求項1記載の熱処理用サセプタにおいて、
前記基板は円板形状を有し、
前記複数の支持ピンは、前記基板の直径の90%の径を有する前記基板の外周円の同心円に接触するように前記保持面に立設されることを特徴とする熱処理用サセプタ。 - 請求項2記載の熱処理用サセプタにおいて、
前記複数の支持ピンは、前記同心円の円周上に沿って30°間隔で12個設けられることを特徴とする熱処理用サセプタ。 - 基板にフラッシュ光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
請求項1から請求項3のいずれかに記載の熱処理用サセプタと、
前記熱処理用サセプタに保持された基板にフラッシュ光を照射するフラッシュランプと、
を備えることを特徴とする熱処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016018849A JP6647892B2 (ja) | 2016-02-03 | 2016-02-03 | 熱処理用サセプタおよび熱処理装置 |
TW105140220A TWI638389B (zh) | 2016-02-03 | 2016-12-06 | 熱處理用承載器及熱處理裝置 |
US15/382,828 US20170221749A1 (en) | 2016-02-03 | 2016-12-19 | Heat treatment susceptor and heat treatment apparatus |
US16/380,878 US11764100B2 (en) | 2016-02-03 | 2019-04-10 | Heat treatment susceptor and heat treatment apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016018849A JP6647892B2 (ja) | 2016-02-03 | 2016-02-03 | 熱処理用サセプタおよび熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017139315A JP2017139315A (ja) | 2017-08-10 |
JP6647892B2 true JP6647892B2 (ja) | 2020-02-14 |
Family
ID=59387147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016018849A Active JP6647892B2 (ja) | 2016-02-03 | 2016-02-03 | 熱処理用サセプタおよび熱処理装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US20170221749A1 (ja) |
JP (1) | JP6647892B2 (ja) |
TW (1) | TWI638389B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP7032955B2 (ja) * | 2018-02-28 | 2022-03-09 | 株式会社Screenホールディングス | 熱処理方法 |
US11047050B2 (en) | 2018-10-30 | 2021-06-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor tool having controllable ambient environment processing zones |
JP7336369B2 (ja) * | 2019-11-25 | 2023-08-31 | 株式会社Screenホールディングス | 基板支持装置、熱処理装置、基板支持方法、熱処理方法 |
JP2021190552A (ja) * | 2020-05-29 | 2021-12-13 | 株式会社Screenホールディングス | 熱処理装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6503594B2 (en) | 1997-02-13 | 2003-01-07 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects and slip |
JP3685152B2 (ja) * | 2002-05-22 | 2005-08-17 | 三菱住友シリコン株式会社 | シリコンウェーハの支持方法 |
US20050016466A1 (en) * | 2003-07-23 | 2005-01-27 | Applied Materials, Inc. | Susceptor with raised tabs for semiconductor wafer processing |
JP4899482B2 (ja) * | 2006-01-11 | 2012-03-21 | ウシオ電機株式会社 | 半導体ウエハ急速加熱装置 |
JP2009164451A (ja) * | 2008-01-09 | 2009-07-23 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP2013206897A (ja) * | 2012-03-27 | 2013-10-07 | Dainippon Screen Mfg Co Ltd | 熱処理用サセプタおよび熱処理装置 |
TWM445783U (zh) * | 2012-07-27 | 2013-01-21 | Nai-Chien Chang | 堆疊型電連接裝置 |
JP6234674B2 (ja) * | 2012-12-13 | 2017-11-22 | 株式会社Screenホールディングス | 熱処理装置 |
JP6084479B2 (ja) | 2013-02-18 | 2017-02-22 | 株式会社Screenホールディングス | 熱処理方法、熱処理装置およびサセプター |
-
2016
- 2016-02-03 JP JP2016018849A patent/JP6647892B2/ja active Active
- 2016-12-06 TW TW105140220A patent/TWI638389B/zh active
- 2016-12-19 US US15/382,828 patent/US20170221749A1/en not_active Abandoned
-
2019
- 2019-04-10 US US16/380,878 patent/US11764100B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017139315A (ja) | 2017-08-10 |
TWI638389B (zh) | 2018-10-11 |
TW201740438A (zh) | 2017-11-16 |
US20190237355A1 (en) | 2019-08-01 |
US11764100B2 (en) | 2023-09-19 |
US20170221749A1 (en) | 2017-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2017017277A (ja) | 熱処理装置および熱処理方法 | |
JP6587955B2 (ja) | 熱処理装置 | |
JP6894256B2 (ja) | 熱処理方法および熱処理装置 | |
JP6647892B2 (ja) | 熱処理用サセプタおよび熱処理装置 | |
JP2016225429A (ja) | 熱処理装置 | |
JP6622617B2 (ja) | 熱処理装置 | |
JP6138610B2 (ja) | 熱処理装置 | |
JP6960344B2 (ja) | 熱処理方法および熱処理装置 | |
JP6770915B2 (ja) | 熱処理装置 | |
JP7319894B2 (ja) | 熱処理装置 | |
KR102182797B1 (ko) | 열처리 방법 | |
JP6982446B2 (ja) | 熱処理装置 | |
JP6469479B2 (ja) | 基板温度調整方法 | |
JP6637321B2 (ja) | 熱処理用サセプタおよび熱処理装置 | |
JP6438326B2 (ja) | 熱処理装置 | |
JP2015088635A (ja) | 熱処理装置および熱処理方法 | |
JP7300365B2 (ja) | 熱処理装置 | |
JP2018133424A (ja) | 熱処理装置 | |
JP7377653B2 (ja) | 熱処理方法および熱処理装置 | |
JP6791693B2 (ja) | 熱処理装置 | |
JP2016219719A (ja) | 熱処理装置 | |
JP2022166682A (ja) | 熱処理方法 | |
JP2019216287A (ja) | 熱処理装置および熱処理方法 | |
JP2023027614A (ja) | 熱処理装置 | |
JP2022106561A (ja) | 熱処理装置および熱処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181221 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190723 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190806 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190927 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200107 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200115 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6647892 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |