JP6894256B2 - 熱処理方法および熱処理装置 - Google Patents
熱処理方法および熱処理装置 Download PDFInfo
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H01J61/84—Lamps with discharge constricted by high pressure
- H01J61/90—Lamps suitable only for intermittent operation, e.g. flash lamp
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
また、請求項5の発明は、請求項1から請求項4のいずれかの発明に係る熱処理方法において、前記減圧工程では、前記チャンバー内に不活性ガスを供給しつつ前記チャンバーからの排気を行うことを特徴とする。
また、請求項10の発明は、請求項6から請求項9のいずれかの発明に係る熱処理装置において、前記圧力制御バルブが前記チャンバー内の圧力をフラッシュ光照射時よりも低く維持するときに、前記ガス供給部から前記チャンバー内に不活性ガスを供給しつつ前記排気部が前記チャンバーからの排気を行うことを特徴とする。
図1は、本発明に係る熱処理装置1の構成を示す縦断面図である。本実施形態の熱処理装置1は、基板として円板形状の半導体ウェハーWに対してフラッシュ光照射を行うことによってその半導体ウェハーWを加熱するフラッシュランプアニール装置である。処理対象となる半導体ウェハーWのサイズは特に限定されるものではないが、例えばφ300mmやφ450mmである(本実施形態ではφ300mm)。熱処理装置1に搬入される前の半導体ウェハーWには不純物が注入されており、熱処理装置1による加熱処理によって注入された不純物の活性化処理が実行される。なお、図1および以降の各図においては、理解容易のため、必要に応じて各部の寸法や数を誇張または簡略化して描いている。
次に、本発明の第2実施形態について説明する。第2実施形態の熱処理装置1の構成は第1実施形態と同じである。また、第2実施形態における半導体ウェハーWの処理手順についても概ね第1実施形態と同様である。第2実施形態が第1実施形態と相違するのは、チャンバー6内へのガス供給流量およびチャンバー6内の圧力変化である。
以上、本発明の実施の形態について説明したが、この発明はその趣旨を逸脱しない限りにおいて上述したもの以外に種々の変更を行うことが可能である。例えば、第1実施形態においては、フラッシュ光照射後にチャンバー6内の圧力を大気圧よりも0.4kPa低く減圧していたが、これに限定されるものではなく、大気圧よりも少なくとも0.4kPa以上低く減圧すれば良い。フラッシュ光照射後のチャンバー6内の圧力が低くなるほど、チャンバー6内に存在していた粒子がチャンバー6内に滞留しにくくなる効果を高めることができるものの、減圧に要する時間は長くなる。
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
65 熱処理空間
74 サセプタ
75 保持プレート
77 基板支持ピン
80 流量調整バルブ
83 ガス供給管
84 バルブ
85 ガス供給源
88 ガス排気管
89 圧力制御バルブ
120 放射温度計
190 排気部
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (10)
- 基板にフラッシュ光を照射することによって該基板を加熱する熱処理方法であって、
チャンバー内に収容した基板の表面にフラッシュランプからフラッシュ光を照射する照射工程と、
前記照射工程の後、前記チャンバー内の圧力を前記照射工程のときよりも低く維持する減圧工程と、
前記減圧工程の後、前記チャンバー内に供給する不活性ガスの流量を増加させるとともに、前記チャンバー内の気体を排出する置換工程と、
を備えることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記減圧工程では、前記チャンバー内の圧力を前記照射工程のときよりも低くした状態を1秒以上50秒以下維持することを特徴とする熱処理方法。 - 請求項1または請求項2記載の熱処理方法において、
前記置換工程では、1分間に前記チャンバーの容積の2倍以上の流量にて不活性ガスを前記チャンバー内に供給することを特徴とする熱処理方法。 - 請求項1から請求項3のいずれかに記載の熱処理方法において、
前記置換工程では、前記チャンバー内の圧力を大気圧よりも大きな陽圧とすること特徴とする熱処理方法。 - 請求項1から請求項4のいずれかに記載の熱処理方法において、
前記減圧工程では、前記チャンバー内に不活性ガスを供給しつつ前記チャンバーからの排気を行うことを特徴とする熱処理方法。 - 基板にフラッシュ光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバー内にて前記基板を保持する保持部と、
前記保持部に保持された前記基板の表面にフラッシュ光を照射するフラッシュランプと、
前記チャンバー内に不活性ガスを供給するガス供給部と、
前記チャンバー内の気体を排出する排気部と、
前記チャンバーと前記排気部との間に介挿されて前記チャンバー内の圧力を制御する圧力制御バルブと、
を備え、
前記フラッシュランプから前記基板にフラッシュ光を照射した後、前記圧力制御バルブが前記チャンバー内の圧力をフラッシュ光照射時よりも低く維持した後、前記ガス供給部が前記チャンバー内に供給する不活性ガスの流量を増加するとともに、前記排気部が前記チャンバー内の気体を排出することを特徴とする熱処理装置。 - 請求項6記載の熱処理装置において、
前記圧力制御バルブは、前記チャンバー内の圧力をフラッシュ光照射時よりも低くした状態を1秒以上50秒以下維持することを特徴とする熱処理装置。 - 請求項6または請求項7記載の熱処理装置において、
前記ガス供給部は、1分間に前記チャンバーの容積の2倍以上の流量にて不活性ガスを前記チャンバー内に供給することを特徴とする熱処理装置。 - 請求項6から請求項8のいずれかに記載の熱処理装置において、
前記ガス供給部が前記チャンバー内に供給する不活性ガスの流量を増加して前記チャンバー内の圧力を大気圧よりも大きな陽圧とすること特徴とする熱処理装置。 - 請求項6から請求項9のいずれかに記載の熱処理装置において、
前記圧力制御バルブが前記チャンバー内の圧力をフラッシュ光照射時よりも低く維持するときに、前記ガス供給部から前記チャンバー内に不活性ガスを供給しつつ前記排気部が前記チャンバーからの排気を行うことを特徴とする熱処理装置。
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Application Number | Priority Date | Filing Date | Title |
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JP2017031804A JP6894256B2 (ja) | 2017-02-23 | 2017-02-23 | 熱処理方法および熱処理装置 |
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JP6960344B2 (ja) * | 2018-01-26 | 2021-11-05 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7032947B2 (ja) * | 2018-02-13 | 2022-03-09 | 株式会社Screenホールディングス | 熱処理方法 |
JP7278111B2 (ja) * | 2019-03-08 | 2023-05-19 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
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