JP7032947B2 - 熱処理方法 - Google Patents
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- JP7032947B2 JP7032947B2 JP2018022883A JP2018022883A JP7032947B2 JP 7032947 B2 JP7032947 B2 JP 7032947B2 JP 2018022883 A JP2018022883 A JP 2018022883A JP 2018022883 A JP2018022883 A JP 2018022883A JP 7032947 B2 JP7032947 B2 JP 7032947B2
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- 238000000137 annealing Methods 0.000 description 11
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
また、請求項2の発明は、石英のサセプタに保持された基板に複数の連続点灯ランプから光を照射することによって該基板を加熱する熱処理方法において、前記複数の連続点灯ランプからの光照射開始時に、前記複数の連続点灯ランプが配列された光照射部の端部から放射される光の強度に対する前記光照射部の中央部から放射される光の強度の比率である強度比を100%未満の第1の比率として前記基板に光照射を行う第1照射工程と、前記第1照射工程の後、前記強度比を前記第1の比率よりも高い第2の比率として前記基板に光照射を行う第2照射工程と、前記第2照射工程の後、前記強度比を100%未満の第3の比率として前記基板に光照射を行う第3照射工程と、を備えることを特徴とする。
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
45 光照射部
45C 中央部ランプ群
45E 端部ランプ群
65 熱処理空間
74 サセプタ
75 保持プレート
77 基板支持ピン
120,130,140 放射温度計
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (5)
- 石英のサセプタに保持された基板に複数の連続点灯ランプから光を照射することによって該基板を加熱する熱処理方法であって、
前記複数の連続点灯ランプからの光照射開始時に、前記複数の連続点灯ランプが配列された光照射部の端部から放射される光の強度に対する前記光照射部の中央部から放射される光の強度の比率である強度比を100%未満の第1の比率として前記基板に光照射を行う第1照射工程と、
前記第1照射工程の後、前記強度比を前記第1の比率よりも高い第2の比率として前記基板に光照射を行う第2照射工程と、
を備え、
前記第1照射工程では、前記複数の連続点灯ランプから5秒以上15秒以下光照射を行うことを特徴とする熱処理方法。 - 石英のサセプタに保持された基板に複数の連続点灯ランプから光を照射することによって該基板を加熱する熱処理方法であって、
前記複数の連続点灯ランプからの光照射開始時に、前記複数の連続点灯ランプが配列された光照射部の端部から放射される光の強度に対する前記光照射部の中央部から放射される光の強度の比率である強度比を100%未満の第1の比率として前記基板に光照射を行う第1照射工程と、
前記第1照射工程の後、前記強度比を前記第1の比率よりも高い第2の比率として前記基板に光照射を行う第2照射工程と、
前記第2照射工程の後、前記強度比を100%未満の第3の比率として前記基板に光照射を行う第3照射工程と、
を備えることを特徴とする熱処理方法。 - 請求項1または請求項2記載の熱処理方法において、
前記第2照射工程では、前記第2の比率を100%よりも高くすることを特徴とする熱処理方法。 - 請求項1から請求項3のいずれかに記載の熱処理方法において、
前記第1の比率は、40%以上70%以下であることを特徴とする熱処理方法。 - 請求項1から請求項4のいずれかに記載の熱処理方法において、
前記基板が前記サセプタに保持される時点で前記サセプタの中央部の温度が250℃以上であり、かつ、前記サセプタの中央部と端縁部との温度差が20℃以上であることを特徴とする熱処理方法。
Priority Applications (5)
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JP2018022883A JP7032947B2 (ja) | 2018-02-13 | 2018-02-13 | 熱処理方法 |
TW107138915A TWI741226B (zh) | 2018-02-13 | 2018-11-02 | 熱處理方法 |
US16/212,365 US10777427B2 (en) | 2018-02-13 | 2018-12-06 | Light irradiation type heat treatment method |
CN201811523701.8A CN110164790B (zh) | 2018-02-13 | 2018-12-13 | 热处理方法 |
KR1020180168224A KR102182797B1 (ko) | 2018-02-13 | 2018-12-24 | 열처리 방법 |
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JP2018022883A JP7032947B2 (ja) | 2018-02-13 | 2018-02-13 | 熱処理方法 |
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JP2019140268A JP2019140268A (ja) | 2019-08-22 |
JP7032947B2 true JP7032947B2 (ja) | 2022-03-09 |
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US (1) | US10777427B2 (ja) |
JP (1) | JP7032947B2 (ja) |
KR (1) | KR102182797B1 (ja) |
CN (1) | CN110164790B (ja) |
TW (1) | TWI741226B (ja) |
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KR102441086B1 (ko) | 2020-12-15 | 2022-09-05 | 현대오토에버 주식회사 | 클래스 간 밸런스가 보완된 기계 학습 방법 |
CN115081388B (zh) * | 2022-06-01 | 2024-03-22 | 华南理工大学 | 一种电子元件发热强度分配优化方法 |
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- 2018-11-02 TW TW107138915A patent/TWI741226B/zh active
- 2018-12-06 US US16/212,365 patent/US10777427B2/en active Active
- 2018-12-13 CN CN201811523701.8A patent/CN110164790B/zh active Active
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013046047A (ja) | 2011-08-26 | 2013-03-04 | Toshiba Corp | 加熱装置および半導体装置の製造方法 |
KR101589599B1 (ko) | 2014-12-22 | 2016-01-28 | 주식회사 엘지실트론 | 웨이퍼의 제조 방법 |
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KR20190098039A (ko) | 2019-08-21 |
CN110164790A (zh) | 2019-08-23 |
TWI741226B (zh) | 2021-10-01 |
US10777427B2 (en) | 2020-09-15 |
TW201935571A (zh) | 2019-09-01 |
US20190252205A1 (en) | 2019-08-15 |
JP2019140268A (ja) | 2019-08-22 |
KR102182797B1 (ko) | 2020-11-25 |
CN110164790B (zh) | 2023-08-11 |
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