JP6587818B2 - 熱処理方法 - Google Patents
熱処理方法 Download PDFInfo
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- JP6587818B2 JP6587818B2 JP2015064191A JP2015064191A JP6587818B2 JP 6587818 B2 JP6587818 B2 JP 6587818B2 JP 2015064191 A JP2015064191 A JP 2015064191A JP 2015064191 A JP2015064191 A JP 2015064191A JP 6587818 B2 JP6587818 B2 JP 6587818B2
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- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
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- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
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- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
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- 229910001220 stainless steel Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
第2の態様に係る熱処理方法は、第1の態様に係る熱処理方法であって、前記ステップ(a)において、前記基板として、一主面上に前記薄膜が直接形成された半導体基板を準備することを特徴とする。
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
At1 第1温度帯域
At11 高温度帯域
At12 低温度帯域
At2 第2温度帯域
FL フラッシュランプ(キセノンフラッシュランプ)
HL ハロゲンランプ
IP0 不純物(ドーパント)
Lt0 薄膜
TH0 拡散最低温度
Tp0 初期温度
Tp1 予備加熱温度
Tp11 第1予備加熱温度
Tp12 第2予備加熱温度
Tp2 フラッシュ加熱温度
W 半導体ウェハー
W0 シリコン基板
Claims (3)
- (a)一主面上にドーパントを含む単分子層および多分子層の少なくとも一方の薄膜が形成された基板を準備するステップと、
(b)前記ステップ(a)において準備された前記基板をチャンバー内に配置するステップと、
(c)前記ステップ(b)において前記チャンバー内に配置された前記基板に対して、連続的に光を照射する第1ランプによって光を照射することで加熱前の温度よりも高い第1温度帯域に保持する予備的な熱処理を施すことにより、前記薄膜に含まれる前記ドーパントを該薄膜から前記基板の表層に導入するステップと、
(d)前記ステップ(c)において予備的な熱処理が施されて前記チャンバー内に配置されている前記基板に対して、第2ランプによってフラッシュ光を0.1ミリ秒間から100ミリ秒間照射することで、前記基板を前記第1温度帯域から該第1温度帯域よりも高い第2温度帯域まで加熱することにより、前記ステップ(c)において前記基板の表層に導入された前記ドーパントの活性化を行うステップと、
を有することを特徴とする熱処理方法。 - 請求項1に記載の熱処理方法であって、
前記ステップ(a)において、
前記基板として、一主面上に前記薄膜が直接形成された半導体基板を準備することを特徴とする熱処理方法。 - 請求項1または請求項2に記載の熱処理方法であって、
前記ステップ(c)において、
前記チャンバー内に配置されている前記基板に対して、前記第1ランプによって光を照射することで前記第1温度帯域のうちの高温側の高温度帯域における第1熱処理を施すとともに、該第1熱処理の後に前記第1温度帯域のうちの前記高温度帯域よりも低温側の低温度帯域における第2熱処理を施し、
前記ステップ(d)において、
前記ステップ(c)において前記第2熱処理が施されて前記チャンバー内に配置されている前記基板に対して、前記第2ランプによって前記フラッシュ光を照射することで、前記基板を前記低温度帯域から前記第2温度帯域まで加熱することを特徴とする熱処理方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015064191A JP6587818B2 (ja) | 2015-03-26 | 2015-03-26 | 熱処理方法 |
US15/560,047 US10128135B2 (en) | 2015-03-26 | 2015-11-18 | Heat treatment method and heat treatment device |
CN201580075686.3A CN107251197B (zh) | 2015-03-26 | 2015-11-18 | 热处理方法 |
PCT/JP2015/082343 WO2016151937A1 (ja) | 2015-03-26 | 2015-11-18 | 熱処理方法、および熱処理装置 |
TW105109260A TWI642109B (zh) | 2015-03-26 | 2016-03-24 | 熱處理方法及熱處理裝置 |
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JP2015064191A JP6587818B2 (ja) | 2015-03-26 | 2015-03-26 | 熱処理方法 |
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JP2016184670A JP2016184670A (ja) | 2016-10-20 |
JP6587818B2 true JP6587818B2 (ja) | 2019-10-09 |
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US (1) | US10128135B2 (ja) |
JP (1) | JP6587818B2 (ja) |
CN (1) | CN107251197B (ja) |
TW (1) | TWI642109B (ja) |
WO (1) | WO2016151937A1 (ja) |
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JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP6810578B2 (ja) * | 2016-11-18 | 2021-01-06 | 株式会社Screenホールディングス | ドーパント導入方法および熱処理方法 |
JP6945703B2 (ja) * | 2016-12-12 | 2021-10-06 | 株式会社Screenホールディングス | ドーパント導入方法および熱処理方法 |
JP6768481B2 (ja) * | 2016-12-12 | 2020-10-14 | 株式会社Screenホールディングス | ドーパント導入方法および熱処理方法 |
JP6810591B2 (ja) * | 2016-12-12 | 2021-01-06 | 株式会社Screenホールディングス | シリコン基板の熱処理方法 |
JP7009102B2 (ja) * | 2017-07-27 | 2022-01-25 | 株式会社Screenホールディングス | 熱処理装置の排気方法 |
JP6942615B2 (ja) * | 2017-11-20 | 2021-09-29 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7024433B2 (ja) * | 2018-01-19 | 2022-02-24 | 富士電機株式会社 | 不純物導入装置、不純物導入方法及び炭化ケイ素半導体装置の製造方法 |
JP2019125762A (ja) * | 2018-01-19 | 2019-07-25 | 富士電機株式会社 | 不純物導入方法及び半導体装置の製造方法 |
JP7038558B2 (ja) | 2018-02-05 | 2022-03-18 | 株式会社Screenホールディングス | 熱処理方法 |
JP7032955B2 (ja) * | 2018-02-28 | 2022-03-09 | 株式会社Screenホールディングス | 熱処理方法 |
GB201815815D0 (en) * | 2018-09-28 | 2018-11-14 | Metryx Ltd | Method and apparatus for controlling the temperature of a semiconductor wafer |
JP7294858B2 (ja) * | 2019-04-09 | 2023-06-20 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7461214B2 (ja) * | 2020-05-19 | 2024-04-03 | 株式会社Screenホールディングス | 熱処理装置 |
JP7508303B2 (ja) | 2020-07-31 | 2024-07-01 | 株式会社Screenホールディングス | 熱処理方法 |
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JPH02162770A (ja) * | 1988-12-15 | 1990-06-22 | Ricoh Co Ltd | 半導体装置の製造方法 |
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TWI566300B (zh) | 2011-03-23 | 2017-01-11 | 斯克林集團公司 | 熱處理方法及熱處理裝置 |
JP5797916B2 (ja) * | 2011-03-23 | 2015-10-21 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP2014011256A (ja) * | 2012-06-28 | 2014-01-20 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
JP6157809B2 (ja) * | 2012-07-19 | 2017-07-05 | 株式会社Screenホールディングス | 基板処理方法 |
JP2014045065A (ja) * | 2012-08-27 | 2014-03-13 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
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