JP5222442B2 - 基板載置台、基板処理装置及び被処理基板の温度制御方法 - Google Patents
基板載置台、基板処理装置及び被処理基板の温度制御方法 Download PDFInfo
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- JP5222442B2 JP5222442B2 JP2008026235A JP2008026235A JP5222442B2 JP 5222442 B2 JP5222442 B2 JP 5222442B2 JP 2008026235 A JP2008026235 A JP 2008026235A JP 2008026235 A JP2008026235 A JP 2008026235A JP 5222442 B2 JP5222442 B2 JP 5222442B2
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- 239000000758 substrate Substances 0.000 title claims description 91
- 238000000034 method Methods 0.000 title claims description 10
- 239000000112 cooling gas Substances 0.000 claims description 34
- 239000011810 insulating material Substances 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000002826 coolant Substances 0.000 claims description 6
- 238000005192 partition Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 14
- 239000003507 refrigerant Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Description
と排出口とを含むガス流路が形成されているものであってもよい。前記凸部と、前記凸部で仕切られた複数の領域上に載置される被処理基板とにより形成される前記領域の空間は、前記給電部の中心に近い領域の空間ほど小さくなっていることは好ましい。
また、この場合において、前記凸部は、前記給電部の中心を中心軸として同心円状に形成されているものであってもよい。
また、前記給電部を中心としてその周囲を所定の半径で同心円状に複数の領域に仕切る凸部を形成し、被処理基板の温度を調整することが好ましい。
2 サセプタ(載置台)
3 筒状保持部
4 筒状支持部
5 フォーカスリング
6 排気路
7 バッフル板
8 排気管
9 排気装置
10 搬入出口
11 ゲートバルブ
12 直流高圧電源
13 給電線
14 絶縁部材
15 シャワーヘッド
16 静電チャック
17 内部電極
18 冷媒流路
19 冷媒ユニット
20,20a,20b 配管
21 周縁環状凸部
22 冷却ガス供給部
23a,23b,23c ガス供給管
24 電極板
25 電極支持体
26 バッファ室
27 ガス導入口
28 処理ガス供給部
29 ガス導入管
30 リング磁石
31,31a,31b 内部環状凸部
32,32a,32b 内側領域
33 外側領域
34 誘電体層
35a,35b,35c ガス排出管
36 流量調節弁
37 圧力計
W 基板(半導体ウェハ)
Claims (5)
- 基板をプラズマ処理する処理チャンバー内に設けられ、給電線周囲が絶縁材料で構成された給電部と、内部に冷却媒体流路とを備えた基板載置台であって、
前記基板載置台の基板載置面側を、前記給電部の中心を中心軸として同心円状に仕切る凸部と、
前記凸部で仕切られた領域のそれぞれに冷却ガスを導入する導入口と、
前記冷却ガスの圧力又は流量を調節する調節手段と、
前記凸部で仕切られた複数の領域のそれぞれに形成された前記冷却ガスの排出口とを備え、
前記凸部と、基板載置台に載置される被処理基板とにより形成される複数の空間領域のうち、前記給電部の中心に近い空間領域は、他の空間領域よりも小さいことを特徴とする基板載置台。 - 前記給電部が、基板載置台の中心部にあることを特徴とする請求項1に記載の基板載置台。
- 前記給電部が、少なくとも1個以上、基板載置台の周縁部にあることを特徴とする請求項1に記載の基板載置台。
- 請求項1から3のいずれかに記載の基板載置台を備えた基板処理装置。
- 基板をプラズマ処理する処理チャンバー内に設けられ、給電線周囲が絶縁材料で構成された給電部と、内部に冷却媒体流路とを備えた基板載置台に載置される被処理基板の温度制御方法であって、
前記載置台の基板載置面側に、前記給電部の周囲を所定の半径で同心円状に複数の領域に仕切る凸部を、前記給電部の中心に近い領域の、前記凸部と、基板載置台に載置される被処理基板とにより形成される空間領域が、他の領域の前記凸部と、基板載置台に載置される被処理基板とにより形成される空間領域よりも小さくなるように形成し、
前記凸部で仕切られた前記複数の領域のそれぞれに冷却ガスを供給し、
前記複数の領域それぞれから冷却ガスを排気し、
前記領域に供給する前記冷却ガスの圧力又は流量を調節することにより、被処理基板の温度を調整することを特徴とする被処理基板の温度制御方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008026235A JP5222442B2 (ja) | 2008-02-06 | 2008-02-06 | 基板載置台、基板処理装置及び被処理基板の温度制御方法 |
US12/366,177 US8696862B2 (en) | 2008-02-06 | 2009-02-05 | Substrate mounting table, substrate processing apparatus and substrate temperature control method |
TW098103675A TWI445124B (zh) | 2008-02-06 | 2009-02-05 | A substrate stage, a substrate processing apparatus, and a substrate to be processed |
EP09152132A EP2088616A3 (en) | 2008-02-06 | 2009-02-05 | Substrate mounting table, substrate processing apparatus and substrate temperature control method |
KR1020090009726A KR101115659B1 (ko) | 2008-02-06 | 2009-02-06 | 기판 탑재대, 기판 처리 장치 및 피처리 기판의 온도 제어 방법 |
CN2009100051604A CN101504928B (zh) | 2008-02-06 | 2009-02-06 | 基板载置台、基板处理装置和被处理基板的温度控制方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2008026235A JP5222442B2 (ja) | 2008-02-06 | 2008-02-06 | 基板載置台、基板処理装置及び被処理基板の温度制御方法 |
Publications (3)
Publication Number | Publication Date |
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JP2009188162A JP2009188162A (ja) | 2009-08-20 |
JP2009188162A5 JP2009188162A5 (ja) | 2011-03-03 |
JP5222442B2 true JP5222442B2 (ja) | 2013-06-26 |
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JP2008026235A Expired - Fee Related JP5222442B2 (ja) | 2008-02-06 | 2008-02-06 | 基板載置台、基板処理装置及び被処理基板の温度制御方法 |
Country Status (6)
Country | Link |
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US (1) | US8696862B2 (ja) |
EP (1) | EP2088616A3 (ja) |
JP (1) | JP5222442B2 (ja) |
KR (1) | KR101115659B1 (ja) |
CN (1) | CN101504928B (ja) |
TW (1) | TWI445124B (ja) |
Cited By (1)
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2008
- 2008-02-06 JP JP2008026235A patent/JP5222442B2/ja not_active Expired - Fee Related
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2009
- 2009-02-05 EP EP09152132A patent/EP2088616A3/en not_active Withdrawn
- 2009-02-05 US US12/366,177 patent/US8696862B2/en active Active
- 2009-02-05 TW TW098103675A patent/TWI445124B/zh not_active IP Right Cessation
- 2009-02-06 KR KR1020090009726A patent/KR101115659B1/ko active IP Right Grant
- 2009-02-06 CN CN2009100051604A patent/CN101504928B/zh not_active Expired - Fee Related
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Publication number | Priority date | Publication date | Assignee | Title |
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CN102762749B (zh) * | 2010-02-26 | 2014-04-09 | 株式会社Ihi | 炉内运送用辊 |
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JP2009188162A (ja) | 2009-08-20 |
EP2088616A2 (en) | 2009-08-12 |
CN101504928B (zh) | 2011-08-03 |
KR101115659B1 (ko) | 2012-03-14 |
EP2088616A3 (en) | 2013-01-02 |
TW201001612A (en) | 2010-01-01 |
US20090194264A1 (en) | 2009-08-06 |
CN101504928A (zh) | 2009-08-12 |
TWI445124B (zh) | 2014-07-11 |
US8696862B2 (en) | 2014-04-15 |
KR20090086171A (ko) | 2009-08-11 |
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