JP6469985B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP6469985B2 JP6469985B2 JP2014152486A JP2014152486A JP6469985B2 JP 6469985 B2 JP6469985 B2 JP 6469985B2 JP 2014152486 A JP2014152486 A JP 2014152486A JP 2014152486 A JP2014152486 A JP 2014152486A JP 6469985 B2 JP6469985 B2 JP 6469985B2
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- 239000004065 semiconductor Substances 0.000 description 10
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- 238000004140 cleaning Methods 0.000 description 4
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
(1)電極ブロック1の上面であって焼結板3が接合される表面に接着剤が塗布され、その上面に焼結板3を載置する。本例では熱硬化型の接着剤が用いられる。
(2)その後、接着層2が所望の厚さとなるまで電極ブロック1または焼結板3にこれらを挟む方向に(図7の図上上下方向に)荷重を加える。このようにして、電極ブロック1または焼結板3の接着される対象の部分の表面から余分な接着剤は外周側に押し出される。
(3)電極ブロック1または試料台101全体を加熱して接着剤を熱硬化させる。
(4)工程(2)において接着対象の面の外周に押し出された状態で硬化した接着剤を除去する。このような余分な接着剤は従来知られた方法により取り除かれる。
Claims (6)
- 真空容器と、この真空容器内部に配置され内側でプラズマが形成される処理室と、この処理室の下方に配置されその上面に前記プラズマを用いた処理の対象である試料が載置される試料台と、この試料台の前記試料が載置される載置面を構成する誘電体製の焼結板と、焼結板の下面下方でこれと接着剤により構成された接着層を介して接合された上面を有する金属製の基材と、基材の内部に配置されて冷媒が通流する冷媒流路とを備え、
前記焼結板の下面の前記基材の上面に接合される面がその中心側から外周縁にわたり平坦にされたものであって、前記基材の上面の中心側の部分およびこの中心側の部分を囲んでリング状に配置され段差により区画された少なくとも1つの凹み部の平坦な底面と前記焼結板の下面との間の距離が前記中心側の部分から外周縁に向けて段々に大きくされると共に前記少なくとも1つの凹み部の底面を含む前記基材の上面と前記焼結板の下面との間に配置された前記接着層の厚さが前記基材の上面の中心側の部分から前記外周縁に向けて段々に大きくされ当該接着層の硬度またはヤング率が前記試料台上面の中心側の部分から外周縁に向けて段々に小さくされたプラズマ処理装置。
- 請求項1に記載のプラズマ処理装置であって、
前記1つの凹み部の底面と前記焼結板の下面との間に配置された前記接着層の厚さが当該1つの凹み部の中心側でこれに隣接して配置された別の凹み部を含む前記基材の上面と前記焼結板の下面との間に配置された前記接着層の厚さより大きくされたプラズマ処理装置。
- 請求項1または2に記載のプラズマ処理装置であって、
前記接着層と前記基材との間に配置され前記焼結板の誘電体と同じ材質により構成された膜または前記接着層と前記焼結板との間に配置され前記基材の金属と同じ材料により構成された膜を備えたプラズマ処理装置。
- 請求項1乃至3のいずれかに記載のプラズマ処理装置であって、
前記接着層の内部に配置された金属製の膜を備えたプラズマ処理装置。
- 真空容器と、この真空容器内部に配置され内側でプラズマが形成される処理室と、この処理室の下方に配置されその上面に前記プラズマを用いた処理の対象である試料が載置される試料台であって、前記試料が載置される載置面を構成する誘電体製の焼結板及び焼結板の下面下方でこれと接着剤により構成された接着層を介して接合された上面を有する金属製の基材並びに基材の内部に配置されて冷媒が通流する冷媒流路とを有した試料台とを備えたプラズマ処理装置の前記試料台の製造方法であって、
前記焼結板の下面の前記基材の上面に接合される面はその中心側から外周縁にわたり平坦にされ、前記基材の上面はその中心側の部分を囲んで配置され段差により区画されたリング状の少なくとも1つの凹み部を備えて当該少なくとも1つの凹み部の平坦な底面を含む前記基材の上面と前記焼結板の下面との間の距離が前記試料台の上面の中心側の部分から外周縁に向けて段々に大きくされたものであって、
前記基材の上面の中心側の部分と前記焼結板との間に接着剤を挟んで所定の距離で接続する工程と、前記基材の上面の前記中心側の部分を囲む前記凹み部と前記焼結板との間に接着剤を導入する工程とを備えて当該凹み部の接着層の硬度またはヤング率を前記中心側部分から前記外周縁に向けて段々に小さくして前記焼結板と前記基材とを接合する試料台の製造方法。
- 請求項5に記載の試料台の製造方法であって、
前記凹み部に導入された接着剤は前記中心側でこれに隣接して配置された別の凹み部において当該別の凹み部の底面と前記焼結板との間の接着剤より硬度が小さいものである試料台の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014152486A JP6469985B2 (ja) | 2014-07-28 | 2014-07-28 | プラズマ処理装置 |
TW104105340A TWI585816B (zh) | 2014-07-28 | 2015-02-16 | A plasma processing apparatus, and a plasma processing apparatus |
KR1020150024358A KR101744044B1 (ko) | 2014-07-28 | 2015-02-17 | 플라즈마 처리 장치 |
US14/626,948 US20160027621A1 (en) | 2014-07-28 | 2015-02-20 | Plasma processing apparatus and sample stage fabricating method |
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JP2014152486A JP6469985B2 (ja) | 2014-07-28 | 2014-07-28 | プラズマ処理装置 |
Publications (2)
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JP2016031956A JP2016031956A (ja) | 2016-03-07 |
JP6469985B2 true JP6469985B2 (ja) | 2019-02-13 |
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US (1) | US20160027621A1 (ja) |
JP (1) | JP6469985B2 (ja) |
KR (1) | KR101744044B1 (ja) |
TW (1) | TWI585816B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6449802B2 (ja) * | 2016-03-16 | 2019-01-09 | 日本特殊陶業株式会社 | 半導体製造用部品 |
CN112204724B (zh) * | 2018-05-28 | 2024-06-18 | 日本特殊陶业株式会社 | 保持装置的制造方法以及保持装置 |
JP7182916B2 (ja) * | 2018-06-26 | 2022-12-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6700362B2 (ja) * | 2018-09-28 | 2020-05-27 | 日本特殊陶業株式会社 | 半導体製造用部品 |
WO2023171651A1 (ja) * | 2022-03-11 | 2023-09-14 | 東京エレクトロン株式会社 | アルミナセラミックス部材、アルミナセラミックス部材の製造方法、半導体製造装置用部品及び基板処理装置 |
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JP3485390B2 (ja) * | 1995-07-28 | 2004-01-13 | 京セラ株式会社 | 静電チャック |
JPH11274281A (ja) * | 1998-03-26 | 1999-10-08 | Kobe Steel Ltd | 静電チャック及びその製造方法 |
JP3978011B2 (ja) * | 2001-10-31 | 2007-09-19 | 京セラ株式会社 | ウエハ載置ステージ |
US7976641B1 (en) * | 2005-09-30 | 2011-07-12 | Lam Research Corporation | Extending storage time of removed plasma chamber components prior to cleaning thereof |
JP2007110023A (ja) * | 2005-10-17 | 2007-04-26 | Shinko Electric Ind Co Ltd | 基板保持装置 |
US7651571B2 (en) * | 2005-12-22 | 2010-01-26 | Kyocera Corporation | Susceptor |
JP2008041927A (ja) * | 2006-08-07 | 2008-02-21 | Shinko Electric Ind Co Ltd | 静電チャックの製造方法 |
KR101553423B1 (ko) * | 2007-12-19 | 2015-09-15 | 램 리써치 코포레이션 | 반도체 진공 프로세싱 장치용 필름 점착제 |
JP5222442B2 (ja) * | 2008-02-06 | 2013-06-26 | 東京エレクトロン株式会社 | 基板載置台、基板処理装置及び被処理基板の温度制御方法 |
US9543181B2 (en) * | 2008-07-30 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Replaceable electrostatic chuck sidewall shield |
JP2010129845A (ja) * | 2008-11-28 | 2010-06-10 | Creative Technology:Kk | 静電チャック及びその製造方法 |
JP5423632B2 (ja) * | 2010-01-29 | 2014-02-19 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP5618638B2 (ja) * | 2010-06-07 | 2014-11-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置または試料載置台 |
JP5505667B2 (ja) * | 2011-09-30 | 2014-05-28 | Toto株式会社 | 交流駆動静電チャック |
JP5829509B2 (ja) * | 2011-12-20 | 2015-12-09 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
US9281226B2 (en) * | 2012-04-26 | 2016-03-08 | Applied Materials, Inc. | Electrostatic chuck having reduced power loss |
JP6010433B2 (ja) * | 2012-11-15 | 2016-10-19 | 東京エレクトロン株式会社 | 基板載置台および基板処理装置 |
-
2014
- 2014-07-28 JP JP2014152486A patent/JP6469985B2/ja active Active
-
2015
- 2015-02-16 TW TW104105340A patent/TWI585816B/zh active
- 2015-02-17 KR KR1020150024358A patent/KR101744044B1/ko active IP Right Grant
- 2015-02-20 US US14/626,948 patent/US20160027621A1/en not_active Abandoned
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Publication number | Publication date |
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TW201604920A (zh) | 2016-02-01 |
US20160027621A1 (en) | 2016-01-28 |
JP2016031956A (ja) | 2016-03-07 |
TWI585816B (zh) | 2017-06-01 |
KR20160013792A (ko) | 2016-02-05 |
KR101744044B1 (ko) | 2017-06-07 |
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