JP6277015B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP6277015B2 JP6277015B2 JP2014037691A JP2014037691A JP6277015B2 JP 6277015 B2 JP6277015 B2 JP 6277015B2 JP 2014037691 A JP2014037691 A JP 2014037691A JP 2014037691 A JP2014037691 A JP 2014037691A JP 6277015 B2 JP6277015 B2 JP 6277015B2
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- sample
- electrode
- processing apparatus
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
Description
(1)セラミクスのグリーンシートに静電吸着用の内部電極を印刷等でパターニングし、他のグリーンシートで内部電極を被覆し、高温・高圧化で焼結する。
(2)セラミクスを所定の厚み、平面度が得られるまで研磨する。平面研磨後に、必要に応じて表面形状加工を行う。
(3)上記製作した静電チャックを電極ブロック上に接着剤を用いて設置、固定する。必要に応じて仕上げ加工を行う。電極ブロック内部には冷媒流路が形成されている。
2…第一の接着層、
3…焼結体、
3−1…第一の焼結体、
3−2…第二の焼結体、
4…試料、
5…高周波電源、
6…冷媒流路、
7…内部電極、
8…第二の接着層、
9…伝導体、
10…絶縁体、
11…接続層、
21…処理室壁、
22…処理室蓋、
23…処理室、
24…ガス導入管、
25…処理ガス、
26…排気口、
27…圧力調節バルブ、
28…ターボ分子ポンプ、
29…マイクロ波発振機、
30…マイクロ波、
31…導波管、
32…ソレノイドコイル、
33…プラズマ、
34…温調ユニット、
101…試料台、
102…静電チャック。
Claims (6)
- 真空容器内部に配置されその内側の空間が減圧される処理室と、この処理室内に配置されその上面に処理対象の試料が載置される試料台とを有し、この試料台の上方の前記処理室内に供給された処理用のガスを用いてプラズマを形成して前記試料を処理するプラズマ処理装置であって、
前記試料台は、内部に冷媒が通流する流路を有し、且つ前記試料の処理中に高周波電力が供給される円板または円筒の形状を有した金属製の電極及びこの電極上面上に配置された静電チャックであって上方に載せられた試料を静電吸着する静電チャックを備え、
前記静電チャックが、前記試料を吸着する電力が供給される膜状の電極と、この電極を内部に有してこれを覆う誘電体製の焼結体とを備え、当該焼結体は、各々が所定の厚さを有した板状の上部焼結体及びその下方でこれと接合され一様な材料で構成された板状の下部焼結体と、これら上部及び下部焼結体により上下から挟まれて前記焼結体内部に配置された前記電極とを備えた一体の板状の部材であって、前記上部焼結体の強度より前記下部焼結体の強度のほうが高くされ前記上部焼結体の誘電率よりも前記下部焼結体の誘電率の方が高くされたプラズマ処理装置。
- 真空容器内部に配置されその内側の空間が減圧される処理室と、この処理室内に配置されその上面に処理対象の試料が載置される試料台とを有し、この試料台の上方の前記処理室内に供給された処理用のガスを用いてプラズマを形成して前記試料を処理するプラズマ処理装置であって、
前記試料台は、内部に冷媒が通流する流路を有し、且つ前記試料の処理中に高周波電力が供給される円板または円筒の形状を有した金属製の電極及びこの電極上面上に配置された静電チャックであって上方に載せられた試料を静電吸着する静電チャックを備え、
前記静電チャックが、前記試料を吸着する電力が供給される膜状の電極と、この膜状の電極を内部に有してこれを覆う誘電体製の焼結体とを備え、当該焼結体は、各々が所定の厚さを有した板状の上部焼結体及びその下方でこれと接合され一様な材料で構成された板状の下部焼結体と、これら上部及び下部焼結体により上下から挟まれて前記焼結体内部に配置された前記電極とを備えた一体の板状の部材であって、前記上部焼結体の強度より前記下部焼結体の強度のほうが高くされ前記上部焼結体の体積抵抗率が前記下部焼結体の体積抵抗率より大きくされたプラズマ処理装置。
- 請求項1または2に記載のプラズマ処理装置であって、
前記上部焼結体の厚さより前記下部焼結体の厚さが大きくされたプラズマ処理装置。
- 請求項1乃至3のいずれかに記載のプラズマ処理装置であって、
前記上部焼結体が純セラミクスにより構成されたプラズマ処理装置。
- 請求項1乃至4のいずれかに記載のプラズマ処理装置であって、
前記金属製の電極の上方で前記静電チャックの下方に配置された膜状のヒータと、このヒータの上方であって前記静電チャックの下方に前記金属製の電極と絶縁されて配置され前記ヒータより大きな径を有し熱伝導性を有する板状部材とを備えたプラズマ処理装置。
- 請求項5に記載のプラズマ処理装置であって、
前記ヒータが前記板状部材と前記金属製の電極の上面との間に挟まれて配置された絶縁層の内部に配置されたプラズマ処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014037691A JP6277015B2 (ja) | 2014-02-28 | 2014-02-28 | プラズマ処理装置 |
TW103126213A TWI564958B (zh) | 2014-02-28 | 2014-07-31 | Plasma processing device |
KR1020140107869A KR101613950B1 (ko) | 2014-02-28 | 2014-08-19 | 플라즈마 처리장치 |
US14/463,685 US20150248994A1 (en) | 2014-02-28 | 2014-08-20 | Plasma processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014037691A JP6277015B2 (ja) | 2014-02-28 | 2014-02-28 | プラズマ処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015162618A JP2015162618A (ja) | 2015-09-07 |
JP2015162618A5 JP2015162618A5 (ja) | 2017-03-02 |
JP6277015B2 true JP6277015B2 (ja) | 2018-02-07 |
Family
ID=54007100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014037691A Active JP6277015B2 (ja) | 2014-02-28 | 2014-02-28 | プラズマ処理装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20150248994A1 (ja) |
JP (1) | JP6277015B2 (ja) |
KR (1) | KR101613950B1 (ja) |
TW (1) | TWI564958B (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6592340B2 (ja) * | 2015-11-18 | 2019-10-16 | アズビル株式会社 | ポジショナ |
JP6811144B2 (ja) | 2017-05-30 | 2021-01-13 | 東京エレクトロン株式会社 | プラズマ処理装置の静電チャックを運用する方法 |
JP6924618B2 (ja) | 2017-05-30 | 2021-08-25 | 東京エレクトロン株式会社 | 静電チャック及びプラズマ処理装置 |
KR102559436B1 (ko) * | 2017-09-29 | 2023-07-26 | 스미토모 오사카 세멘토 가부시키가이샤 | 정전 척 장치 |
CN111108589B (zh) * | 2017-09-29 | 2023-10-20 | 住友大阪水泥股份有限公司 | 静电卡盘装置 |
JP7149739B2 (ja) * | 2018-06-19 | 2022-10-07 | 東京エレクトロン株式会社 | 載置台及び基板処理装置 |
US11037765B2 (en) * | 2018-07-03 | 2021-06-15 | Tokyo Electron Limited | Resonant structure for electron cyclotron resonant (ECR) plasma ionization |
SG11202010340WA (en) * | 2018-07-07 | 2021-01-28 | Applied Materials Inc | Semiconductor processing apparatus for high rf power process |
JP7134020B2 (ja) * | 2018-08-17 | 2022-09-09 | 東京エレクトロン株式会社 | バルブ装置、処理装置、および制御方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE95513T1 (de) * | 1988-04-26 | 1993-10-15 | Toto Ltd | Verfahren zur herstellung dielektrischer keramik fuer elektrostatische haltevorrichtungen. |
JPH04367247A (ja) * | 1991-06-14 | 1992-12-18 | Kyocera Corp | セラミック製静電チャック |
JPH05299494A (ja) * | 1992-04-22 | 1993-11-12 | Fujitsu Ltd | 静電吸着装置 |
JPH07130826A (ja) * | 1993-11-01 | 1995-05-19 | Anelva Corp | 静電チャック |
US5801915A (en) * | 1994-01-31 | 1998-09-01 | Applied Materials, Inc. | Electrostatic chuck having a unidirectionally conducting coupler layer |
US6693789B2 (en) * | 2000-04-05 | 2004-02-17 | Sumitomo Osaka Cement Co., Ltd. | Susceptor and manufacturing method thereof |
US20030010292A1 (en) * | 2001-07-16 | 2003-01-16 | Applied Materials, Inc. | Electrostatic chuck with dielectric coating |
JP2004319700A (ja) | 2003-04-15 | 2004-11-11 | Nhk Spring Co Ltd | 静電チャック |
JP4467453B2 (ja) * | 2004-09-30 | 2010-05-26 | 日本碍子株式会社 | セラミックス部材及びその製造方法 |
JP5084155B2 (ja) * | 2005-03-11 | 2012-11-28 | 日本碍子株式会社 | アルミナ焼結体及びその製造方法、並びに、このアルミナ焼結体を用いた静電チャック及びその製造方法 |
US20080062609A1 (en) * | 2006-08-10 | 2008-03-13 | Shinji Himori | Electrostatic chuck device |
US8284538B2 (en) * | 2006-08-10 | 2012-10-09 | Tokyo Electron Limited | Electrostatic chuck device |
JP2008091353A (ja) * | 2006-09-07 | 2008-04-17 | Ngk Insulators Ltd | 静電チャック |
JP5203612B2 (ja) * | 2007-01-17 | 2013-06-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP5029089B2 (ja) * | 2007-03-26 | 2012-09-19 | 東京エレクトロン株式会社 | プラズマ処理装置用の載置台及びプラズマ処理装置 |
JP5201527B2 (ja) * | 2008-03-28 | 2013-06-05 | 東京エレクトロン株式会社 | 静電チャック、及びその製造方法 |
US7929269B2 (en) * | 2008-09-04 | 2011-04-19 | Momentive Performance Materials Inc. | Wafer processing apparatus having a tunable electrical resistivity |
TW201209957A (en) * | 2010-05-28 | 2012-03-01 | Praxair Technology Inc | Substrate supports for semiconductor applications |
JP5618638B2 (ja) * | 2010-06-07 | 2014-11-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置または試料載置台 |
JP5876992B2 (ja) * | 2011-04-12 | 2016-03-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP6052169B2 (ja) * | 2011-04-27 | 2016-12-27 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP5957812B2 (ja) * | 2011-06-21 | 2016-07-27 | 住友大阪セメント株式会社 | 静電チャック装置 |
US9916998B2 (en) * | 2012-12-04 | 2018-03-13 | Applied Materials, Inc. | Substrate support assembly having a plasma resistant protective layer |
-
2014
- 2014-02-28 JP JP2014037691A patent/JP6277015B2/ja active Active
- 2014-07-31 TW TW103126213A patent/TWI564958B/zh active
- 2014-08-19 KR KR1020140107869A patent/KR101613950B1/ko active IP Right Grant
- 2014-08-20 US US14/463,685 patent/US20150248994A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR101613950B1 (ko) | 2016-04-20 |
US20150248994A1 (en) | 2015-09-03 |
JP2015162618A (ja) | 2015-09-07 |
KR20150102669A (ko) | 2015-09-07 |
TW201533795A (zh) | 2015-09-01 |
TWI564958B (zh) | 2017-01-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6277015B2 (ja) | プラズマ処理装置 | |
JP5270310B2 (ja) | 静電チャック及び基板処理装置 | |
KR101835435B1 (ko) | 플라즈마 처리 장치 | |
KR100842452B1 (ko) | 플라즈마 처리 장치용 전극 어셈블리 및 플라즈마 처리장치 | |
JP2011119654A (ja) | 静電チャック用基板及び静電チャック | |
JP2007005491A (ja) | 電極アッセンブリ及びプラズマ処理装置 | |
US8529730B2 (en) | Plasma processing apparatus | |
TWI661465B (zh) | Plasma processing device | |
TW201936014A (zh) | 電漿處理裝置 | |
JP6283532B2 (ja) | 静電チャックの製造方法 | |
TW201001530A (en) | Electrode structure and substrate processing apparatus | |
JP4935149B2 (ja) | プラズマ処理用の電極板及びプラズマ処理装置 | |
TWI717631B (zh) | 電漿處理裝置 | |
JP2019140155A (ja) | プラズマ処理装置 | |
TWI585816B (zh) | A plasma processing apparatus, and a plasma processing apparatus | |
JP5654083B2 (ja) | 静電チャック及び基板処理装置 | |
JP5367000B2 (ja) | プラズマ処理装置 | |
JP5235033B2 (ja) | 電極アッセンブリ及びプラズマ処理装置 | |
TW202105510A (zh) | 電漿處理裝置 | |
JP4355159B2 (ja) | 静電吸着ホルダー及び基板処理装置 | |
JP2019160714A (ja) | プラズマ処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161226 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161226 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20170116 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161226 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20170123 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20170803 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20170804 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170914 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170926 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171117 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171219 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180115 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6277015 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |