JP2015162618A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP2015162618A JP2015162618A JP2014037691A JP2014037691A JP2015162618A JP 2015162618 A JP2015162618 A JP 2015162618A JP 2014037691 A JP2014037691 A JP 2014037691A JP 2014037691 A JP2014037691 A JP 2014037691A JP 2015162618 A JP2015162618 A JP 2015162618A
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- 238000012545 processing Methods 0.000 title claims abstract description 130
- 239000003507 refrigerant Substances 0.000 claims abstract description 21
- 239000000919 ceramic Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 abstract description 27
- 230000008569 process Effects 0.000 abstract description 14
- 238000001179 sorption measurement Methods 0.000 description 32
- 235000012431 wafers Nutrition 0.000 description 24
- 239000004020 conductor Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 16
- 239000002245 particle Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000005530 etching Methods 0.000 description 12
- 239000012790 adhesive layer Substances 0.000 description 11
- 239000012212 insulator Substances 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000005513 bias potential Methods 0.000 description 6
- 230000006378 damage Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007751 thermal spraying Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】真空容器内部に配置されその内側の空間が減圧される処理室と、この処理室内に配置されその上面に処理対象の試料が載置される試料台とを有し、この試料台の上方の前記処理室内に供給された処理用のガスを用いてプラズマを形成して前記試料を処理するプラズマ処理装置であって、前記試料台は、内部に冷媒が通流する流路を有し前記試料の処理中に高周波電力が供給される金属製のブロック及びこのブロック上に配置され前記試料が載せられて静電吸着される静電チャックを備え、前記静電チャックが、前記試料を吸着する電力が供給される膜状の電極と、この電極を上下から挟んで接合された板状の上部焼結体及び下部焼結体とを備え、上部焼結体の誘電率よりも下部焼結体の誘電率方が高い。
【選択図】 図2
Description
(1)セラミクスのグリーンシートに静電吸着用の内部電極を印刷等でパターニングし、他のグリーンシートで内部電極を被覆し、高温・高圧化で焼結する。
(2)セラミクスを所定の厚み、平面度が得られるまで研磨する。平面研磨後に、必要に応じて表面形状加工を行う。
(3)上記製作した静電チャックを電極ブロック上に接着剤を用いて設置、固定する。必要に応じて仕上げ加工を行う。電極ブロック内部には冷媒流路が形成されている。
2…第一の接着層、
3…焼結体、
3−1…第一の焼結体、
3−2…第二の焼結体、
4…試料、
5…高周波電源、
6…冷媒流路、
7…内部電極、
8…第二の接着層、
9…伝導体、
10…絶縁体、
11…接続層、
21…処理室壁、
22…処理室蓋、
23…処理室、
24…ガス導入管、
25…処理ガス、
26…排気口、
27…圧力調節バルブ、
28…ターボ分子ポンプ、
29…マイクロ波発振機、
30…マイクロ波、
31…導波管、
32…ソレノイドコイル、
33…プラズマ、
34…温調ユニット、
101…試料台、
102…静電チャック。
Claims (6)
- 真空容器内部に配置されその内側の空間が減圧される処理室と、この処理室内に配置されその上面に処理対象の試料が載置される試料台とを有し、この試料台の上方の前記処理室内に供給された処理用のガスを用いてプラズマを形成して前記試料を処理するプラズマ処理装置であって、
前記試料台は、内部に冷媒が通流する流路を有し前記試料の処理中に高周波電力が供給される金属製のブロック及びこのブロック上に配置され前記試料が載せられて静電吸着される静電チャックを備え、
前記静電チャックが、前記試料を吸着する電力が供給される膜状の電極と、この電極を上下から挟んで接合された板状の上部焼結体及び下部焼結体とを備え、上部焼結体の誘電率よりも下部焼結体の誘電率方が高いプラズマ処理装置。
- 請求項1に記載のプラズマ処理装置であて、
前記上部焼結体の体積抵抗率が前記下部焼結体の体積抵抗率より大きくされたプラズマ処理装置。
- 請求項1または2に記載のプラズマ処理装置であって、
前記上部焼結体の厚さより前記下部焼結体の厚さが大きくされたプラズマ処理装置。
- 請求項1乃至3のいずれかに記載のプラズマ処理装置であって、
前記上部焼結体が純セラミクスにより構成されたプラズマ処理装置。
- 請求項1乃至4のいずれかに記載のプラズマ処理装置であって、
前記ブロックの上方で前記静電チャックの下方に配置された膜状のヒータと、このヒータの上方であって前記静電チャックの下方に前記ブロックと絶縁されて配置され前記ヒータより大きな径を有し熱伝導性を有する板状部材とを備えたプラズマ処理装置。
- 請求項5に記載のプラズマ処理装置であって、
前記ヒータが前記板状部材と前記ブロックの上面との間に挟まれて配置された絶縁層の内部に配置されたプラズマ処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014037691A JP6277015B2 (ja) | 2014-02-28 | 2014-02-28 | プラズマ処理装置 |
TW103126213A TWI564958B (zh) | 2014-02-28 | 2014-07-31 | Plasma processing device |
KR1020140107869A KR101613950B1 (ko) | 2014-02-28 | 2014-08-19 | 플라즈마 처리장치 |
US14/463,685 US20150248994A1 (en) | 2014-02-28 | 2014-08-20 | Plasma processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014037691A JP6277015B2 (ja) | 2014-02-28 | 2014-02-28 | プラズマ処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015162618A true JP2015162618A (ja) | 2015-09-07 |
JP2015162618A5 JP2015162618A5 (ja) | 2017-03-02 |
JP6277015B2 JP6277015B2 (ja) | 2018-02-07 |
Family
ID=54007100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014037691A Active JP6277015B2 (ja) | 2014-02-28 | 2014-02-28 | プラズマ処理装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20150248994A1 (ja) |
JP (1) | JP6277015B2 (ja) |
KR (1) | KR101613950B1 (ja) |
TW (1) | TWI564958B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10818480B2 (en) | 2017-05-30 | 2020-10-27 | Tokyo Electron Limited | Method of operating electrostatic chuck of plasma processing apparatus |
US10825660B2 (en) | 2017-05-30 | 2020-11-03 | Tokyo Electron Limited | Electrostatic chuck and plasma processing apparatus |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6592340B2 (ja) * | 2015-11-18 | 2019-10-16 | アズビル株式会社 | ポジショナ |
US11664261B2 (en) * | 2017-09-29 | 2023-05-30 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck device |
CN111108589B (zh) * | 2017-09-29 | 2023-10-20 | 住友大阪水泥股份有限公司 | 静电卡盘装置 |
JP7149739B2 (ja) * | 2018-06-19 | 2022-10-07 | 東京エレクトロン株式会社 | 載置台及び基板処理装置 |
US11037765B2 (en) * | 2018-07-03 | 2021-06-15 | Tokyo Electron Limited | Resonant structure for electron cyclotron resonant (ECR) plasma ionization |
SG11202010340WA (en) * | 2018-07-07 | 2021-01-28 | Applied Materials Inc | Semiconductor processing apparatus for high rf power process |
JP7134020B2 (ja) * | 2018-08-17 | 2022-09-09 | 東京エレクトロン株式会社 | バルブ装置、処理装置、および制御方法 |
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JPH0222166A (ja) * | 1988-04-26 | 1990-01-25 | Toto Ltd | 静電チャック用誘電体セラミックス及びその製造方法 |
JPH04367247A (ja) * | 1991-06-14 | 1992-12-18 | Kyocera Corp | セラミック製静電チャック |
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-
2014
- 2014-02-28 JP JP2014037691A patent/JP6277015B2/ja active Active
- 2014-07-31 TW TW103126213A patent/TWI564958B/zh active
- 2014-08-19 KR KR1020140107869A patent/KR101613950B1/ko active IP Right Grant
- 2014-08-20 US US14/463,685 patent/US20150248994A1/en not_active Abandoned
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH0222166A (ja) * | 1988-04-26 | 1990-01-25 | Toto Ltd | 静電チャック用誘電体セラミックス及びその製造方法 |
JPH04367247A (ja) * | 1991-06-14 | 1992-12-18 | Kyocera Corp | セラミック製静電チャック |
JPH05299494A (ja) * | 1992-04-22 | 1993-11-12 | Fujitsu Ltd | 静電吸着装置 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US10818480B2 (en) | 2017-05-30 | 2020-10-27 | Tokyo Electron Limited | Method of operating electrostatic chuck of plasma processing apparatus |
US10825660B2 (en) | 2017-05-30 | 2020-11-03 | Tokyo Electron Limited | Electrostatic chuck and plasma processing apparatus |
US11476095B2 (en) | 2017-05-30 | 2022-10-18 | Tokyo Electron Limited | Electrostatic chuck and plasma processing apparatus |
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JP6277015B2 (ja) | 2018-02-07 |
TW201533795A (zh) | 2015-09-01 |
TWI564958B (zh) | 2017-01-01 |
KR20150102669A (ko) | 2015-09-07 |
US20150248994A1 (en) | 2015-09-03 |
KR101613950B1 (ko) | 2016-04-20 |
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