JP2019021828A - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
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- JP2019021828A JP2019021828A JP2017140752A JP2017140752A JP2019021828A JP 2019021828 A JP2019021828 A JP 2019021828A JP 2017140752 A JP2017140752 A JP 2017140752A JP 2017140752 A JP2017140752 A JP 2017140752A JP 2019021828 A JP2019021828 A JP 2019021828A
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- semiconductor wafer
- light
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- heat treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
図1は、本発明に係る熱処理装置1の構成を示す縦断面図である。図1の熱処理装置1は、基板として円板形状の半導体ウェハーWに対してフラッシュ光照射を行うことによってその半導体ウェハーWを加熱するフラッシュランプアニール装置である。処理対象となる半導体ウェハーWのサイズは特に限定されるものではないが、例えばφ300mmやφ450mmである(本実施形態ではφ300mm)。熱処理装置1に搬入される前の半導体ウェハーWには不純物が注入されており、熱処理装置1による加熱処理によって注入された不純物の活性化処理が実行される。なお、図1および以降の各図においては、理解容易のため、必要に応じて各部の寸法や数を誇張または簡略化して描いている。
次に、本発明の第2実施形態について説明する。第2実施形態の熱処理装置1の全体構成は第1実施形態と概ね同じである。また、第2実施形態の熱処理装置1における半導体ウェハーWの処理手順も第1実施形態と同様である。第2実施形態が第1実施形態と相違するのは、分布調整部材の形態である。
次に、本発明の第3実施形態について説明する。第3実施形態の熱処理装置1の全体構成は第1実施形態と概ね同じである。また、第3実施形態の熱処理装置1における半導体ウェハーWの処理手順も第1実施形態と同様である。第3実施形態が第1実施形態と相違するのは、分布調整部材の形態である。
次に、本発明の第4実施形態について説明する。第4実施形態の熱処理装置1の全体構成は第1実施形態と概ね同じである。また、第4実施形態の熱処理装置1における半導体ウェハーWの処理手順も第1実施形態と同様である。第4実施形態が第1実施形態と相違するのは、分布調整部材の形態である。
以上、本発明の実施の形態について説明したが、この発明はその趣旨を逸脱しない限りにおいて上述したもの以外に種々の変更を行うことが可能である。例えば、上記各実施形態においては、複数のレンズの曲率が全て一定であったが、1つの分布調整部材に嵌装される複数のレンズ(凹面レンズまたは凸面レンズ)の曲率が異なるようにしても良い。例えば、位置決めプレートの中心に設けられたレンズから周縁部に設けられたレンズに向けて曲率半径が順次少しずつ大きくなるようにしても良い。このようすれば、半導体ウェハーWの中心に向かう光がより強く拡散されて照度分布の面内均一性をさらに向上させることができる。
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
65 熱処理空間
74 サセプタ
75 保持プレート
77 基板支持ピン
90,290,390,490 分布調整部材
91,291,391,491 位置決めプレート
92,392 凹面レンズ
292,492 凸面レンズ
93,293,393,493 丸穴
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (5)
- 基板に光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバー内にて前記基板を保持する保持部と、
前記チャンバーの一方側に設けられ、前記保持部に保持された前記基板に光を照射する光照射部と、
前記保持部と前記光照射部との間に設けられ、前記光照射部から放射された光の光路を調整する複数の光路調整部材と、
を備えることを特徴とする熱処理装置。 - 請求項1記載の熱処理装置において、
前記保持部と前記光照射部との間に設けられ、複数の有底穴が穿設された位置決め板をさらに備え、
前記複数の光路調整部材は、前記複数の有底穴に着脱自在に嵌装されることを特徴とする熱処理装置。 - 請求項2記載の熱処理装置において、
前記複数の光路調整部材のそれぞれは、凹面レンズであることを特徴とする熱処理装置。 - 請求項2記載の熱処理装置において、
前記複数の光路調整部材のそれぞれは、凸面レンズであることを特徴とする熱処理装置。 - 請求項2記載の熱処理装置において、
前記複数の有底穴には、異なる種類の光路調整部材が嵌装されることを特徴とする熱処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017140752A JP2019021828A (ja) | 2017-07-20 | 2017-07-20 | 熱処理装置 |
TW107117670A TW201909249A (zh) | 2017-07-20 | 2018-05-24 | 熱處理裝置 |
US16/019,145 US20190027384A1 (en) | 2017-07-20 | 2018-06-26 | Light irradiation type heat treatment apparatus |
KR1020180074033A KR20190010431A (ko) | 2017-07-20 | 2018-06-27 | 열처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017140752A JP2019021828A (ja) | 2017-07-20 | 2017-07-20 | 熱処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2019021828A true JP2019021828A (ja) | 2019-02-07 |
Family
ID=65023177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017140752A Pending JP2019021828A (ja) | 2017-07-20 | 2017-07-20 | 熱処理装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20190027384A1 (ja) |
JP (1) | JP2019021828A (ja) |
KR (1) | KR20190010431A (ja) |
TW (1) | TW201909249A (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
KR102317403B1 (ko) | 2019-01-28 | 2021-10-29 | 주식회사 바이오앱 | 당화된 Ag85A 단백질을 포함하는 결핵 예방용 백신 조성물 및 이의 제조방법 |
KR102263006B1 (ko) * | 2019-07-18 | 2021-06-10 | 세메스 주식회사 | 기판 처리 장치 |
CN114203594A (zh) * | 2021-12-08 | 2022-03-18 | 北京北方华创微电子装备有限公司 | 去气腔室及半导体工艺设备 |
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2017
- 2017-07-20 JP JP2017140752A patent/JP2019021828A/ja active Pending
-
2018
- 2018-05-24 TW TW107117670A patent/TW201909249A/zh unknown
- 2018-06-26 US US16/019,145 patent/US20190027384A1/en not_active Abandoned
- 2018-06-27 KR KR1020180074033A patent/KR20190010431A/ko not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60161616A (ja) * | 1984-02-01 | 1985-08-23 | Matsushita Electric Ind Co Ltd | 半導体ウエハの赤外線加熱装置 |
JP2003031517A (ja) * | 2001-07-19 | 2003-01-31 | Dainippon Screen Mfg Co Ltd | 基板の熱処理装置 |
JP2006278802A (ja) * | 2005-03-30 | 2006-10-12 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP2016162880A (ja) * | 2015-03-02 | 2016-09-05 | 株式会社Screenホールディングス | 基板熱処理装置および基板温度調整方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20190010431A (ko) | 2019-01-30 |
TW201909249A (zh) | 2019-03-01 |
US20190027384A1 (en) | 2019-01-24 |
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