JP6472247B2 - 熱処理方法および熱処理装置 - Google Patents
熱処理方法および熱処理装置 Download PDFInfo
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- JP6472247B2 JP6472247B2 JP2015001302A JP2015001302A JP6472247B2 JP 6472247 B2 JP6472247 B2 JP 6472247B2 JP 2015001302 A JP2015001302 A JP 2015001302A JP 2015001302 A JP2015001302 A JP 2015001302A JP 6472247 B2 JP6472247 B2 JP 6472247B2
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Formation Of Insulating Films (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
2 シャッター機構
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
61 チャンバー側部
62 凹部
63 上側チャンバー窓
64 下側チャンバー窓
65 熱処理空間
74 サセプター
91 トリガー電極
92 ガラス管
93 コンデンサ
94 コイル
96 IGBT
97 トリガー回路
101 基材
102 界面層膜
103 高誘電率ゲート絶縁膜
180 アンモニア供給機構
FL フラッシュランプ
HL ハロゲンランプ
W 基板
Claims (9)
- 基材上に界面層膜を挟み込んで高誘電率膜が成膜された基板を加熱する熱処理方法であって、
前記基板をチャンバー内に収容する収容工程と、
前記チャンバー内を大気圧未満に減圧しつつ前記チャンバー内にアンモニアを供給してアンモニア雰囲気を形成する雰囲気形成工程と、
前記チャンバー内に収容された前記基板の表面にフラッシュ光を照射して前記高誘電率膜を加熱するフラッシュ照射工程と、
を備えることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記フラッシュ照射工程では、分光分布にて波長200nm〜300nmの範囲内にピークを有するフラッシュ光を照射することを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記フラッシュ照射工程では、分光分布にて波長500nmに対する波長300nmの相対強度が20%以上であるフラッシュ光を照射することを特徴とする熱処理方法。 - 請求項1から請求項3のいずれかに記載の熱処理方法において、
前記フラッシュ照射工程では、アンモニア雰囲気中にて前記高誘電率膜を加熱することによって前記高誘電率膜の窒化を促進することを特徴とする熱処理方法。 - 請求項1から請求項4のいずれかに記載の熱処理方法において、
前記フラッシュ照射工程におけるフラッシュ光の照射時間は0.2ミリ秒以上1秒以下であることを特徴とする熱処理方法。 - 基材上に界面層膜を挟み込んで高誘電率膜が成膜された基板を加熱する熱処理装置であって、
前記基板を収容するチャンバーと、
前記チャンバー内を大気圧未満に減圧しつつ前記チャンバー内にアンモニアを供給してアンモニア雰囲気を形成する雰囲気形成手段と、
前記チャンバー内に収容された前記基板の表面にフラッシュ光を照射するフラッシュランプと、
を備えることを特徴とする熱処理装置。 - 請求項6記載の熱処理装置において、
前記フラッシュランプは、分光分布にて波長200nm〜300nmの範囲内にピークを有するフラッシュ光を照射することを特徴とする熱処理装置。 - 請求項6記載の熱処理装置において、
前記フラッシュランプは、分光分布にて波長500nmに対する波長300nmの相対強度が20%以上であるフラッシュ光を照射することを特徴とする熱処理装置。 - 請求項6から請求項8のいずれかに記載の熱処理装置において、
前記フラッシュランプのフラッシュ光照射時間は0.2ミリ秒以上1秒以下であることを特徴とする熱処理装置。
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US14/975,992 US9557110B2 (en) | 2015-01-07 | 2015-12-21 | Method and apparatus for heat-treating high dielectric constant film |
CN201610006808.XA CN105762074A (zh) | 2015-01-07 | 2016-01-05 | 热处理方法及热处理装置 |
TW107110255A TWI698933B (zh) | 2015-01-07 | 2016-01-07 | 熱處理方法及熱處理裝置 |
TW105100416A TWI624873B (zh) | 2015-01-07 | 2016-01-07 | 熱處理方法及熱處理裝置 |
US15/380,000 US9837266B2 (en) | 2015-01-07 | 2016-12-15 | Method and apparatus for heat-treating high dielectric constant film |
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