JP6654716B2 - 熱処理方法およびゲート形成方法 - Google Patents
熱処理方法およびゲート形成方法 Download PDFInfo
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- JP6654716B2 JP6654716B2 JP2019007832A JP2019007832A JP6654716B2 JP 6654716 B2 JP6654716 B2 JP 6654716B2 JP 2019007832 A JP2019007832 A JP 2019007832A JP 2019007832 A JP2019007832 A JP 2019007832A JP 6654716 B2 JP6654716 B2 JP 6654716B2
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- 238000010438 heat treatment Methods 0.000 title claims description 125
- 238000000034 method Methods 0.000 title claims description 49
- 230000015572 biosynthetic process Effects 0.000 title 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 139
- 239000000758 substrate Substances 0.000 claims description 125
- 229910021529 ammonia Inorganic materials 0.000 claims description 69
- 239000012298 atmosphere Substances 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 238000009826 distribution Methods 0.000 claims description 23
- 230000003595 spectral effect Effects 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 19
- 230000001678 irradiating effect Effects 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 10
- 229910052736 halogen Inorganic materials 0.000 description 69
- 150000002367 halogens Chemical class 0.000 description 69
- 238000012546 transfer Methods 0.000 description 57
- 239000007789 gas Substances 0.000 description 54
- 230000007246 mechanism Effects 0.000 description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
- 238000005121 nitriding Methods 0.000 description 26
- 235000012239 silicon dioxide Nutrition 0.000 description 26
- 238000012545 processing Methods 0.000 description 25
- 239000010453 quartz Substances 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 19
- 230000007547 defect Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- 229910001873 dinitrogen Inorganic materials 0.000 description 15
- 230000005855 radiation Effects 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 12
- 239000011521 glass Substances 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 11
- 238000000137 annealing Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052724 xenon Inorganic materials 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000009529 body temperature measurement Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000004397 blinking Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
2 シャッター機構
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
61 チャンバー側部
62 凹部
63 上側チャンバー窓
64 下側チャンバー窓
65 熱処理空間
74 サセプター
91 トリガー電極
92 ガラス管
93 コンデンサ
94 コイル
96 IGBT
97 トリガー回路
101 基材
102 界面層膜
103 高誘電率ゲート絶縁膜
180 アンモニア供給機構
FL フラッシュランプ
HL ハロゲンランプ
W 基板
Claims (6)
- 基板にゲートを形成するゲート形成方法であって、
基材上に界面層膜を形成する第1成膜工程と、
前記界面層膜の上に高誘電率膜を形成する第2成膜工程と、
前記高誘電率膜の上にメタルゲートを堆積する第1堆積工程と、
アンモニア雰囲気中にて前記基板の表面にフラッシュ光を照射して前記高誘電率膜および前記メタルゲートを加熱するフラッシュ照射工程と、
前記メタルゲートの上にさらにメタルゲートを堆積する第2堆積工程と、
を備えることを特徴とするゲート形成方法。 - 請求項1記載のゲート形成方法において、
前記フラッシュ照射工程では、分光分布にて波長200nm〜300nmの範囲内にピークを有するフラッシュ光を照射することを特徴とするゲート形成方法。 - 請求項1記載のゲート形成方法において、
前記フラッシュ照射工程では、分光分布にて波長500nmに対する波長300nmの相対強度が20%以上であるフラッシュ光を照射することを特徴とするゲート形成方法。 - 基材上に界面層膜を挟み込んで高誘電率膜が成膜され、さらに前記高誘電率膜の上にメタルゲートが堆積された基板を加熱する熱処理方法であって、
前記基板をチャンバー内に収容する収容工程と、
前記チャンバー内にアンモニアを供給してアンモニア雰囲気を形成する雰囲気形成工程と、
前記チャンバー内に収容された前記基板の表面にフラッシュ光を照射して前記高誘電率膜および前記メタルゲートを加熱するフラッシュ照射工程と、
を備えることを特徴とする熱処理方法。 - 請求項4記載の熱処理方法において、
前記フラッシュ照射工程では、分光分布にて波長200nm〜300nmの範囲内にピークを有するフラッシュ光を照射することを特徴とする熱処理方法。 - 請求項4記載の熱処理方法において、
前記フラッシュ照射工程では、分光分布にて波長500nmに対する波長300nmの相対強度が20%以上であるフラッシュ光を照射することを特徴とする熱処理方法。
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Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004031557A (ja) * | 2002-06-25 | 2004-01-29 | Ushio Inc | 光加熱装置 |
JP4411907B2 (ja) * | 2003-08-29 | 2010-02-10 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4277268B2 (ja) * | 2003-11-28 | 2009-06-10 | ローム株式会社 | 金属化合物薄膜の製造方法、ならびに当該金属化合物薄膜を含む半導体装置の製造方法 |
JP2005277285A (ja) * | 2004-03-26 | 2005-10-06 | Toshiba Corp | 半導体装置の製造方法 |
US20070042130A1 (en) * | 2005-08-17 | 2007-02-22 | Applied Materials, Inc. | Method of treating films using UV-generated active species |
JP2007123662A (ja) * | 2005-10-31 | 2007-05-17 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
JP2007194582A (ja) * | 2005-12-20 | 2007-08-02 | Tokyo Electron Ltd | 高誘電体薄膜の改質方法及び半導体装置 |
JP2007214156A (ja) * | 2006-02-07 | 2007-08-23 | Yatabe Hitoo | 半導体デバイス |
JP6026090B2 (ja) * | 2011-09-26 | 2016-11-16 | 株式会社Screenホールディングス | 熱処理方法 |
JP5418563B2 (ja) * | 2011-09-29 | 2014-02-19 | ウシオ電機株式会社 | 酸化物半導体を用いた薄膜トランジスタの製造方法および製造装置 |
JP5955658B2 (ja) * | 2012-06-15 | 2016-07-20 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
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