JP2020010047A - 熱処理方法 - Google Patents
熱処理方法 Download PDFInfo
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- JP2020010047A JP2020010047A JP2019153480A JP2019153480A JP2020010047A JP 2020010047 A JP2020010047 A JP 2020010047A JP 2019153480 A JP2019153480 A JP 2019153480A JP 2019153480 A JP2019153480 A JP 2019153480A JP 2020010047 A JP2020010047 A JP 2020010047A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 142
- 238000000034 method Methods 0.000 title claims abstract description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 89
- 239000007789 gas Substances 0.000 claims abstract description 88
- 229920005591 polysilicon Polymers 0.000 claims abstract description 88
- 238000000137 annealing Methods 0.000 claims abstract description 72
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000002425 crystallisation Methods 0.000 claims abstract description 15
- 230000008025 crystallization Effects 0.000 claims abstract description 15
- 230000001678 irradiating effect Effects 0.000 claims abstract description 12
- 230000007547 defect Effects 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 235000012239 silicon dioxide Nutrition 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 23
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 10
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 5
- 239000001272 nitrous oxide Substances 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 4
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 131
- 229910052736 halogen Inorganic materials 0.000 abstract description 85
- 150000002367 halogens Chemical class 0.000 abstract description 85
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 29
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 21
- 238000000280 densification Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 109
- 238000012546 transfer Methods 0.000 description 55
- 230000007246 mechanism Effects 0.000 description 46
- 230000008569 process Effects 0.000 description 16
- 239000010453 quartz Substances 0.000 description 16
- 230000005855 radiation Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052724 xenon Inorganic materials 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- 238000009529 body temperature measurement Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 2
- 230000004397 blinking Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052805 deuterium Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052722 tritium Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
2 シャッター機構
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
61 チャンバー側部
63 上側チャンバー窓
64 下側チャンバー窓
65 熱処理空間
74 サセプター
111 基材
112 ソース
113 ドレイン
116 ゲート絶縁膜
117,217 ポリシリコン膜
118 ゲート電極
180 雰囲気形成機構
211 窒化ケイ素膜
212 二酸化ケイ素膜
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (4)
- ポリシリコン膜を形成した基板に光を照射して加熱することによって前記ポリシリコン膜の結晶化を促進する熱処理方法であって、
前記ポリシリコン膜が形成された基板の表面にフラッシュランプからフラッシュ光を照射することによって前記ポリシリコン膜を含む前記基板の表面を第1の温度に加熱するフラッシュ加熱工程と、
連続的に光を照射するランプからの光照射によって前記基板の温度を前記第1の温度よりも低い第2の温度に維持するアニール工程と、
を備え、
前記ポリシリコン膜は、二酸化ケイ素膜と窒化ケイ素膜とが多層に積層された積層体の積層方向に沿って接するように形成され、
前記アニール工程は、水素、アンモニア、塩化水素、二酸化硫黄、亜酸化窒素、硫化水素からなる群から選択されたいずれかのガスを含む雰囲気中にて実行されて前記ポリシリコン膜と前記窒化ケイ素膜および前記二酸化ケイ素膜との界面に存在している欠陥を水素終端によって消失させることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記アニール工程では、前記基板の温度を300℃以上1000℃以下に2秒以上30分以下維持することを特徴とする熱処理方法。 - 請求項1または請求項2記載の熱処理方法において、
前記アニール工程は前記フラッシュ加熱工程の後に実行されることを特徴とする熱処理方法。 - 請求項3記載の熱処理方法において、
前記フラッシュ加熱工程の前に前記連続的に光を照射するランプからの光照射によって前記基板の温度を前記第2の温度に加熱する予備加熱工程をさらに備えることを特徴とする熱処理方法。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114709294A (zh) * | 2022-05-31 | 2022-07-05 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法、光伏组件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05304268A (ja) * | 1992-04-28 | 1993-11-16 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2002252174A (ja) * | 2000-12-08 | 2002-09-06 | Sony Corp | 半導体薄膜の形成方法、半導体装置及び電気光学装置の製造方法、これらの方法の実施に使用する装置、並びに半導体装置及び電気光学装置 |
JP2014003050A (ja) * | 2012-06-15 | 2014-01-09 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
JP2014175630A (ja) * | 2013-03-13 | 2014-09-22 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
-
2019
- 2019-08-26 JP JP2019153480A patent/JP6814855B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05304268A (ja) * | 1992-04-28 | 1993-11-16 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2002252174A (ja) * | 2000-12-08 | 2002-09-06 | Sony Corp | 半導体薄膜の形成方法、半導体装置及び電気光学装置の製造方法、これらの方法の実施に使用する装置、並びに半導体装置及び電気光学装置 |
JP2014003050A (ja) * | 2012-06-15 | 2014-01-09 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
JP2014175630A (ja) * | 2013-03-13 | 2014-09-22 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114709294A (zh) * | 2022-05-31 | 2022-07-05 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法、光伏组件 |
CN114709294B (zh) * | 2022-05-31 | 2022-11-29 | 浙江晶科能源有限公司 | 太阳能电池及其制备方法、光伏组件 |
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