TWI650802B - 結晶構造控制方法及熱處理方法 - Google Patents

結晶構造控制方法及熱處理方法 Download PDF

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TWI650802B
TWI650802B TW106135814A TW106135814A TWI650802B TW I650802 B TWI650802 B TW I650802B TW 106135814 A TW106135814 A TW 106135814A TW 106135814 A TW106135814 A TW 106135814A TW I650802 B TWI650802 B TW I650802B
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substrate
flash
film
crystal structure
heat treatment
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TW106135814A
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TW201826346A (zh
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河原﨑光
上田晃頌
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日商斯庫林集團股份有限公司
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Abstract

本發明提供一種可對成膜於基板上之薄膜所表現出之結晶構造進行調整之結晶構造控制方法及熱處理方法。 於基板W之正面，隔著界面層膜101而成膜有二氧化鉿膜102。將形成有二氧化鉿膜102之基板W預加熱之後，以極短照射時間及較強強度對該基板W之正面照射閃光，藉此，僅基板W之正面被瞬間加熱而急遽地熱膨脹。於該瞬間，較大之壓縮應力作用於基板W之正面，並且拉伸應力作用於背面。藉由於加熱二氧化鉿膜102之同時使較強之壓縮應力作用於該二氧化鉿膜102，可提高二氧化鉿膜102之結晶構造中所存在之立方晶構造的比率，從而可調整二氧化鉿膜102所表現出之結晶構造。

Description

結晶構造控制方法及熱處理方法
本發明係關於一種對形成於半導體晶圓等薄板狀精密電子基板(以下，簡稱為「基板」)之正面的薄膜之結晶構造進行控制的結晶構造控制方法及熱處理方法。
作為場效電晶體(FET)之閘極絕緣膜，研究有先前較為普通、使用相對介電常數高於二氧化矽(SiO2 )之材料(高介電常數材料)的高介電常數膜(High-k膜)之應用(例如，專利文獻1)。高介電常數膜係為了解決隨著閘極絕緣膜之薄膜化之發展漏電流增大之問題，而與對閘極電極使用金屬所得之金屬閘極電極一起形成新的堆疊(stack)構造並被不斷推進開發者。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2011-77421號公報
[發明所欲解決之問題] 作為高介電常數材料，鉿系材料前景看好，二氧化鉿(氧化鉿：HfO2 )係有力候補之一。二氧化鉿之結晶構造於常溫常壓下為單斜晶構造(Monoclinic構造)。作為高介電常數材料，較佳為相對介電常數較高者，且已知立方晶構造(Cubic構造)之二氧化鉿之相對介電常數高於單斜晶構造之二氧化鉿之相對介電常數。因此，強烈期望開發由立方晶構造之二氧化鉿形成之高介電常數膜。 本發明係鑒於上述問題而完成者，其目的在於提供一種可對成膜於基板上之薄膜所表現出之結晶構造進行調整之結晶構造控制方法及熱處理方法。 [解決問題之技術手段] 為了解決上述問題，技術方案1之發明係一種結晶構造控制方法，其對形成於基板正面之薄膜之結晶構造進行控制，且其特徵在於包括：成膜步驟，其係於基板之正面成膜薄膜；及閃光加熱步驟，其係自閃光燈對上述基板之正面照射閃光而加熱上述薄膜並且使壓縮應力作用於上述薄膜。 又，技術方案2之發明係如技術方案1之發明之結晶構造控制方法，其特徵在於：於上述閃光加熱步驟中，藉由調整上述閃光之照射時間而使作用於上述薄膜之壓縮應力變化。 又，技術方案3之發明係如技術方案1或技術方案2之發明之結晶構造控制方法，其特徵在於：於上述閃光加熱步驟之前，進而包括將上述基板加熱至特定之預加熱溫度之預加熱步驟。 又，技術方案4之發明係一種熱處理方法，其將正面形成有薄膜之基板加熱而控制該薄膜之結晶構造，且其特徵在於：自閃光燈對上述基板之正面照射閃光而加熱上述薄膜並且使壓縮應力作用於上述薄膜。 [發明之效果] 根據技術方案1至技術方案4之發明，自閃光燈對形成有薄膜之基板之正面照射閃光而加熱該薄膜並且使壓縮應力作用於該薄膜，故而能以結晶之填充率變高之方式對成膜於基板上之薄膜所表現出之結晶構造進行調整。 尤其，根據技術方案2之發明，藉由調整閃光之照射時間而使作用於薄膜之壓縮應力變化，故而可適當地調整成膜於基板上之薄膜所表現出之結晶構造。
以下，一面參照圖式一面對本發明之實施形態詳細地進行說明。 首先，對執行實施本發明之結晶構造控制方法時必不可少之熱處理的熱處理裝置進行說明。圖1係表示本發明之結晶構造控制方法中所使用的熱處理裝置1之構成的縱剖視圖。圖1之熱處理裝置1係藉由對圓板形狀之基板W進行閃光照射而加熱該基板W之閃光燈退火裝置。成為處理對象之基板W之尺寸並不特別限定，例如為f300 mm或f450 mm。再者，於圖1及以下之各圖中，為了容易理解，而根據需要將各部之尺寸或數量誇張或簡化地加以繪製。 熱處理裝置1具備：腔室6，其收容基板W；閃光加熱部5，其內置複數個閃光燈FL；及鹵素加熱部4，其內置複數個鹵素燈HL。於腔室6之上側設置有閃光加熱部5，並且於下側設置有鹵素加熱部4。又，熱處理裝置1於腔室6之內部具備：保持部7，其將基板W保持為水平姿勢；及移載機構10，其於保持部7與裝置外部之間進行基板W之交接。進而，熱處理裝置1具備控制部3，該控制部3對鹵素加熱部4、閃光加熱部5、及設置於腔室6之各動作機構進行控制，使其等執行基板W之熱處理。 腔室6係於筒狀之腔室側部61之上下安裝石英製之腔室窗而構成。腔室側部61具有上下開口之大概筒形狀，於上側開口安裝有上側腔室窗63加以封閉，於下側開口安裝有下側腔室窗64加以封閉。構成腔室6之頂壁之上側腔室窗63係由石英形成之圓板形狀構件，作為供自閃光加熱部5出射之閃光透射至腔室6內之石英窗而發揮功能。又，構成腔室6之底部之下側腔室窗64亦係由石英形成之圓板形狀構件，作為供來自鹵素加熱部4之光透射至腔室6內之石英窗而發揮功能。 又，於腔室側部61之內側壁面之上部安裝有反射環68，於下部安裝有反射環69。反射環68、69均形成為圓環狀。上側之反射環68係藉由自腔室側部61之上側嵌入而安裝。另一方面，下側之反射環69係藉由自腔室側部61之下側嵌入並利用圖示省略之螺釘加以固定而安裝。即，反射環68、69均裝卸自如地安裝於腔室側部61。將腔室6之內側空間，即由上側腔室窗63、下側腔室窗64、腔室側部61及反射環68、69所包圍之空間規定為熱處理空間65。 藉由於腔室側部61安裝反射環68、69，而於腔室6之內壁面形成凹部62。即，形成由腔室側部61之內壁面中未安裝反射環68、69之中央部分、反射環68之下端面、及反射環69之上端面所包圍之凹部62。凹部62係於腔室6之內壁面沿著水平方向呈圓環狀而形成，圍繞保持基板W之保持部7。腔室側部61及反射環68、69由強度與耐熱性優異之金屬材料(例如，不鏽鋼)形成。 又，於腔室側部61，形成設置有用以相對於腔室6進行基板W之搬入及搬出之搬送開口部(爐口)66。搬送開口部66能夠藉由閘閥185而開閉。搬送開口部66連通連接於凹部62之外周面。因此，於閘閥185將搬送開口部66打開時，可自搬送開口部66通過凹部62向熱處理空間65搬入基板W及自熱處理空間65搬出基板W。又，若閘閥185將搬送開口部66關閉，則腔室6內之熱處理空間65成為密閉空間。 又，於腔室6之內壁上部，形成設置有對熱處理空間65供給處理氣體之氣體供給孔81。氣體供給孔81形成設置於較凹部62靠上側位置，亦可設置於反射環68。氣體供給孔81經由呈圓環狀形成於腔室6之側壁內部之緩衝空間82而連通連接於氣體供給管83。氣體供給管83連接於處理氣體供給源85。又，於氣體供給管83之路徑中途介插有閥84。若打開閥84，則處理氣體自處理氣體供給源85對緩衝空間82供給。流入至緩衝空間82之處理氣體係以於流體阻力小於氣體供給孔81之緩衝空間82內擴散的方式流動，而自氣體供給孔81向熱處理空間65內供給。作為處理氣體，例如可使用氮(N2 )等惰性氣體、或氫(H2 )、氨(NH3 )等反應性氣體、或者將其等混合而成之混合氣體(於本實施形態中為氮氣)。 另一方面，於腔室6之內壁下部，形成設置有將熱處理空間65內之氣體排出之氣體排出孔86。氣體排出孔86形成設置於較凹部62靠下側位置，亦可設置於反射環69。氣體排出孔86經由呈圓環狀形成於腔室6之側壁內部之緩衝空間87而連通連接於氣體排出管88。氣體排出管88連接於排氣部190。又，於氣體排出管88之路徑中途介插有閥89。若打開閥89，則熱處理空間65之氣體自氣體排出孔86經過緩衝空間87向氣體排出管88排出。再者，氣體供給孔81及氣體排出孔86既可沿著腔室6之圓周方向設置有複數個，亦可為狹縫狀。又，處理氣體供給源85及排氣部190既可為設置於熱處理裝置1之機構，亦可為設置熱處理裝置1之工廠之公用設施。 又，於搬送開口部66之前端亦連接有將熱處理空間65內之氣體排出之氣體排出管191。氣體排出管191經由閥192而連接於排氣部190。藉由打開閥192經由搬送開口部66將腔室6內之氣體排出。 圖2係表示保持部7之整體外觀之立體圖。保持部7係具備基台環71、連結部72及基座74而構成。基台環71、連結部72及基座74均由石英形成。即，保持部7整體由石英形成。 基台環71係圓環形狀缺失一部分而成之圓弧形狀之石英構件。該缺失部分係為了防止下述移載機構10之移載臂11與基台環71發生干涉而設置。基台環71藉由載置於凹部62之底面，而支持於腔室6之壁面(參照圖1)。於基台環71之上表面，沿著其圓環形狀之圓周方向豎立設置有複數個連結部72(於本實施形態中為4個)。連結部72亦係石英構件，其藉由焊接而固著於基台環71。 基座74係藉由設置於基台環71之4個連結部72而支持。圖3係基座74之俯視圖。又，圖4係基座74之剖視圖。基座74具備保持板75、引導環76及複數個基板支持銷77。保持板75係由石英形成之大致圓形之平板狀構件。保持板75之直徑大於基板W之直徑。即，保持板75具有大於基板W之平面尺寸。 於保持板75之上表面周緣部設置有引導環76。引導環76係內徑大於基板W之直徑的圓環形狀之構件。例如，於基板W之直徑為f300 mm之情形時，引導環76之內徑為f320 mm。引導環76之內周形成為自保持板75朝向上方變寬之傾斜面。引導環76與保持板75相同由石英形成。引導環76既可熔接於保持板75之上表面，亦可藉由另外加工所得之銷等而固定於保持板75。或者，亦可將保持板75與引導環76加工成為一體之構件。 將保持板75之上表面中較引導環76靠內側之區域設為保持基板W之平面狀之保持面75a。於保持板75之保持面75a豎立設置有複數個基板支持銷77。於本實施形態中，在與保持面75a之外周圓(引導環76之內周圓)同心之圓的圓周上每30°豎立設置1個基板支持銷77而合計豎立設置有12個基板支持銷77。配置有12個基板支持銷77之圓之直徑(相對向之基板支持銷77間之距離)小於基板W之直徑，若基板W之直徑為f300 mm則其為f270 mm～f280 mm(於本實施形態中為f270 mm)。各基板支持銷77由石英形成。複數個基板支持銷77既可藉由焊接而設置於保持板75之上表面，亦可與保持板75加工成為一體。 返回至圖2，豎立設置於基台環71之4個連結部72與基座74之保持板75之周緣部藉由焊接而固著。即，基座74與基台環71藉由連結部72而固定性地連結。藉由如此地將保持部7之基台環71支持於腔室6之壁面，而將保持部7安裝於腔室6。於保持部7已安裝於腔室6之狀態下，基座74之保持板75成為水平姿勢(法線與鉛垂方向一致之姿勢)。即，保持板75之保持面75a成為水平面。 搬入至腔室6之基板W係以水平姿勢載置並保持於安裝在腔室6的保持部7之基座74之上。此時，基板W係藉由豎立設置於保持板75上之12個基板支持銷77而支持並保持於基座74。更嚴格而言，12個基板支持銷77之上端部與基板W之下表面接觸而支持該基板W。由於12個基板支持銷77之高度(基板支持銷77之上端至保持板75之保持面75a之距離)均等，故而可藉由12個基板支持銷77將基板W支持為水平姿勢。 又，基板W係藉由複數個基板支持銷77自保持板75之保持面75a隔開特定間隔而支持。引導環76之厚度大於基板支持銷77之高度。因此，被複數個基板支持銷77所支持之基板W之水平方向之位置偏移藉由引導環76而得以防止。 又，如圖2及圖3所示，於基座74之保持板75，上下貫通而形成有開口部78。開口部78係為了供放射溫度計120(參照圖1)接收自保持於基座74之基板W之下表面放射之放射光(紅外光)而設置。即，放射溫度計120經由開口部78而接收自保持於基座74之基板W之下表面放射之光，並藉由另外設置之檢測器而測定該基板W之溫度。進而，於基座74之保持板75，穿設有供下述移載機構10之頂起銷12貫通以交接基板W之4個貫通孔79。 圖5係移載機構10之俯視圖。又，圖6係移載機構10之側視圖。移載機構10具備2根移載臂11。移載臂11形成為沿著大致圓環狀之凹部62之圓弧形狀。於各移載臂11豎立設置有2根頂起銷12。各移載臂11能夠藉由水平移動機構13而旋動。水平移動機構13使一對移載臂11在相對於保持部7進行基板W之移載的移載動作位置(圖5之實線位置)及俯視下不與保持於保持部7之基板W重疊的退避位置(圖5之兩點鏈線位置)之間水平移動。作為水平移動機構13，既可為藉由個別之馬達使各移載臂11分別旋動者，亦可為使用連桿機構藉由1個馬達使一對移載臂11連動地旋動者。 又，一對移載臂11藉由升降機構14與水平移動機構13一起升降移動。若升降機構14使一對移載臂11於移載動作位置處上升，則合計4根頂起銷12通過穿設於基座74之貫通孔79(參照圖2、3)，頂起銷12之上端自基座74之上表面突出。另一方面，若升降機構14使一對移載臂11於移載動作位置處下降而將頂起銷12自貫通孔79拔出，且水平移動機構13使一對移載臂11以打開之方式移動，則各移載臂11移動至退避位置。一對移載臂11之退避位置係保持部7之基台環71之正上方。由於基台環71載置於凹部62之底面，故而移載臂11之退避位置成為凹部62之內側。再者，亦可為如下構成：於移載機構10之設置有驅動部(水平移動機構13及升降機構14)之部位附近亦設置有圖示省略之排氣機構，以將移載機構10之驅動部周邊之氣體排出至腔室6之外部。 返回至圖1，設置於腔室6上方之閃光加熱部5係於殼體51之內側具備包括複數根(於本實施形態中為30根)氙氣閃光燈FL之光源、及以覆蓋該光源上方之方式設置之反射器52而構成。又，於閃光加熱部5之殼體51之底部安裝有燈光放射窗53。構成閃光加熱部5之底部之燈光放射窗53係由石英形成之板狀之石英窗。藉由閃光加熱部5設置於腔室6之上方，燈光放射窗53與上側腔室窗63相對向。閃光燈FL自腔室6之上方經由燈光放射窗53及上側腔室窗63而對熱處理空間65照射閃光。 複數個閃光燈FL係分別具有長條之圓筒形狀之棒狀燈，且以各自之長度方向沿著保持於保持部7之基板W之主面(即沿著水平方向)相互平行之方式呈平面狀排列。因此，由閃光燈FL之排列所形成之平面亦係水平面。 圖8係表示閃光燈FL之驅動電路之圖。如該圖所示，電容器93、線圈94、閃光燈FL、IGBT(Insulated Gate Bipolar Transistor，絕緣閘極雙極性電晶體)96串聯連接。又，如圖8所示，控制部3具備脈衝產生器31及波形設定部32，並且連接於輸入部33。作為輸入部33，可採用鍵盤、滑鼠、觸控面板等各種公知輸入設備。波形設定部32基於來自輸入部33之輸入內容而設定脈衝信號之波形，脈衝產生器31根據該波形而產生脈衝信號。 閃光燈FL具備：棒狀之玻璃管(放電管)92，其內部封入有氙氣，其兩端部配設有陽極及陰極；及觸發電極91，其附設於該玻璃管92之外周面上。藉由電源單元95對電容器93施加特定電壓，充入與該施加電壓(充電電壓)對應之電荷。又，可自觸發電路97對觸發電極91施加高電壓。觸發電路97對觸發電極91施加電壓之時序由控制部3控制。 IGBT96係於閘極部組裝MOSFET(Metal Oxide Semiconductor Field effect transistor，金屬氧化物半導體場效電晶體)而成之雙極性電晶體，係適於處理大電力之開關元件。自控制部3之脈衝產生器31對IGBT96之閘極施加脈衝信號。若對IGBT96之閘極施加特定值以上之電壓(高電壓，High電壓)則IGBT96成為導通狀態，若施加未達特定值之電壓(低電壓，Low電壓)則IGBT96成為斷開狀態。以此方式，藉由IGBT96使包含閃光燈FL之驅動電路導通/斷開。藉由IGBT96之導通/斷開，閃光燈FL與對應之電容器93之連接得以繼續/中斷，流向閃光燈FL之電流得到導通/斷開控制。 即便電容器93為已充電狀態，且IGBT96成為導通狀態而對玻璃管92之兩端電極施加高電壓，由於氙氣係電絕緣體，故而正常狀態下玻璃管92內亦不會通電。然而，於觸發電路97對觸發電極91施加高電壓而破壞了絕緣之情形時，玻璃管92內會因兩端電極間之放電而瞬時流通電流，藉由此時之氙氣之原子或分子之激發會放出光。 如圖8所示之驅動電路係個別地設置於閃光加熱部5中所設置之複數個閃光燈FL各者。於本實施形態中，呈平面狀排列有30根閃光燈FL，故而與其等對應地如圖8所示設置有30個驅動電路。因此，流向30根閃光燈FL各者之電流係由對應之IGBT96個別地加以導通/斷開控制。 又，反射器52以覆蓋複數個閃光燈FL整體之方式設置於該複數個閃光燈FL之上方。反射器52之基本功能係將自複數個閃光燈FL出射之閃光反射至熱處理空間65側。反射器52由鋁合金板形成，其正面(面對閃光燈FL之側之面)藉由噴砂處理經受過粗面化加工。 設置於腔室6下方之鹵素加熱部4於殼體41之內側內置有複數根(於本實施形態中為40根)鹵素燈HL。鹵素加熱部4係藉由複數個鹵素燈HL自腔室6之下方經由下側腔室窗64向熱處理空間65進行光照射而加熱基板W之光照射部。 圖7係表示複數個鹵素燈HL之配置之俯視圖。40根鹵素燈HL分上下2層而配置。於靠近保持部7之上層配設有20根鹵素燈HL，並且於較上層離保持部7遠之下層亦配設有20根鹵素燈HL。各鹵素燈HL係具有長條之圓筒形狀之棒狀燈。上層、下層均為20根鹵素燈HL以各自之長度方向沿著保持於保持部7之基板W之主面(即沿著水平方向)相互平行之方式排列。因此，上層、下層均為由鹵素燈HL之排列所形成之平面係水平面。 又，如圖7所示，上層、下層均為，相較於與保持於保持部7之基板W之中央部對向的區域而言與周緣部對向之區域的鹵素燈HL之配設密度更高。即，上下層均為，相較於燈排列之中央部而言周緣部之鹵素燈HL之配設間距更短。因此，於利用來自鹵素加熱部4之光照射進行加熱時，可對容易發生溫度降低之基板W之周緣部進行更多光量之照射。 又，由上層之鹵素燈HL構成之燈群與由下層之鹵素燈HL構成之燈群係呈格子狀交叉排列。即，以配置於上層之20根鹵素燈HL之長度方向與配置於下層之20根鹵素燈HL之長度方向相互正交的方式配設有合計40根鹵素燈HL。 鹵素燈HL係藉由對配設於玻璃管內部之燈絲通電而使燈絲白熾化從而使之發光之燈絲方式之光源。於玻璃管之內部，封入有向氮或氬等惰性氣體中導入微量鹵族元素(碘、溴等)而成之氣體。藉由導入鹵族元素，能夠抑制燈絲之折損且能夠將燈絲之溫度設定為高溫。因此，鹵素燈HL與普通白熾燈泡相比具有壽命長且可持續地照射強光之特性。即，鹵素燈HL係持續發光至少1秒以上之持續點亮燈。又，鹵素燈HL由於係棒狀燈，故而壽命長，且藉由將鹵素燈HL沿著水平方向配置可使其朝向上方之基板W之放射效率優異。 又，亦於鹵素加熱部4之殼體41內，在2層鹵素燈HL之下側設置有反射器43(圖1)。反射器43將自複數個鹵素燈HL出射之光反射至熱處理空間65之側。 控制部3對設置於熱處理裝置1之上述各種動作機構進行控制。作為控制部3之硬體之構成與普通電腦相同。即，控制部3具備作為進行各種運算處理之電路之CPU(Central Processing Unit，中央處理單元)、作為記憶基本程式之讀出專用記憶體之ROM(Read Only Memory，唯讀記憶體)、作為記憶各種資訊之讀寫自如記憶體之RAM(Random Access Memory，隨機存取記憶體)、及預先記憶控制用軟體或資料等之磁碟。藉由控制部3之CPU執行特定處理程式，進行熱處理裝置1中之處理。又，如圖8所示，控制部3具備脈衝產生器31及波形設定部32。如上所述，波形設定部32基於來自輸入部33之輸入內容而設定脈衝信號之波形，脈衝產生器31根據該波形而向IGBT96之閘極輸出脈衝信號。 除了上述構成以外，熱處理裝置1還具備各種冷卻用之構造，以防止於基板W之熱處理時鹵素加熱部4、閃光加熱部5及腔室6因自鹵素燈HL及閃光燈FL產生之熱量而出現溫度過度上升之情況。例如，於腔室6之壁體設置有水冷管(圖示省略)。又，鹵素加熱部4及閃光加熱部5形成為於內部形成氣流而進行排熱之空冷構造。又，亦對上側腔室窗63與燈光放射窗53之間隙供給空氣，而將閃光加熱部5及上側腔室窗63冷卻。 其次，對本發明之結晶構造控制方法進行說明。首先，於基板W之正面成膜二氧化鉿(HfO2 )薄膜。圖9係表示正面形成有二氧化鉿薄膜之基板W之圖。基板W例如為圓板形狀之矽之半導體晶圓。於該基板W之正面藉由熱氧化法等方法而成膜成為二氧化鉿薄膜之基底的二氧化矽(SiO2 )之界面層膜101。界面層膜101之膜厚例如為0.8 nm。 於界面層膜101之上成膜二氧化鉿薄膜102(以下，稱為二氧化鉿膜102)。二氧化鉿膜102例如係藉由利用ALD(Atomic Layer Deposition，原子層沈積)法使作為高介電常數材料之二氧化鉿沈積於界面層膜101之上而成膜。沈積於界面層膜101之上之二氧化鉿膜102之膜厚例如為3 nm。二氧化鉿膜102之形成方法並不限定於ALD，例如可採用MOCVD(Metal Organic Chemical Vapor Deposition，有機金屬化學氣相沈積)等公知方法。 剛成膜後之二氧化鉿膜102尚不具有既定之結晶構造，而為接近於非晶質之狀態。於形成二氧化鉿薄膜作為場效電晶體之高介電常數閘極絕緣膜之情形時，較典型為，藉由進行成膜後熱處理(PDA：Post Deposition Annealing，沈積後退火)而使二氧化鉿薄膜具有結晶構造。 於本實施形態中，使用熱處理裝置1對正面形成有二氧化鉿膜102之基板W照射閃光而進行閃光加熱。以下，對利用熱處理裝置1所實施之基板W之處理進行說明。以下所說明之熱處理裝置1之處理順序係藉由控制部3控制熱處理裝置1之各動作機構而推進。 首先，打開閘閥185從而打開搬送開口部66，藉由裝置外部之搬送機器人經由搬送開口部66將形成有二氧化鉿膜102之基板W搬入至腔室6內之熱處理空間65。此時，亦可藉由對腔室6內持續供給氮氣，而使搬送開口部66流出氮氣流，從而將裝置外部之氣體流入至腔室6內之情況抑制為最小極限。藉由搬送機器人而搬入之基板W進出至保持部7之正上方位置後停止。然後，藉由移載機構10之一對移載臂11自退避位置水平移動至移載動作位置並上升，頂起銷12通過貫通孔79自基座74之保持板75之上表面突出而接收基板W。此時，頂起銷12上升至較基板支持銷77之上端靠上方。 於基板W載置於頂起銷12之後，搬送機器人自熱處理空間65退出，閘閥185將搬送開口部66關閉。然後，藉由一對移載臂11之下降，將基板W自移載機構10交接至保持部7之基座74並以水平姿勢自下方加以保持。基板W係藉由豎立設置於保持板75上之複數個基板支持銷77而支持，並保持於基座74。又，基板W係以形成有二氧化鉿膜102之正面為上表面而保持於保持部7。於被複數個基板支持銷77所支持之基板W之背面(與正面為相反側之主面)與保持板75之保持面75a之間形成特定間隔。已下降至基座74下方之一對移載臂11藉由水平移動機構13而退避至退避位置、即凹部62之內側。 又，於藉由閘閥185關閉搬送開口部66而使熱處理空間65成為密閉空間之後，進行腔室6內之氣氛調整。具體而言，打開閥84從而自氣體供給孔81對熱處理空間65供給處理氣體。於本實施形態中，將氮氣(N2 )作為處理氣體供給至腔室6內之熱處理空間65。又，打開閥89從而自氣體排出孔86將腔室6內之氣體排出。藉此，自腔室6內之熱處理空間65之上部供給之處理氣體向下方流動而自熱處理空間65之下部排出，從而熱處理空間65被置換成氮氣氛圍。又，藉由打開閥192，腔室6內之氣體亦自搬送開口部66排出。進而，藉由圖示省略之排氣機構，移載機構10之驅動部周邊之氣體亦被排出。 於腔室6內被置換成氮氣氛圍，基板W被保持部7之基座74以水平姿勢自下方保持之後，將鹵素加熱部4之40根鹵素燈HL一齊點亮而開始基板W之預加熱(輔助加熱)。自鹵素燈HL出射之鹵素光透過由石英形成之下側腔室窗64及基座74而自基板W之背面進行照射。藉由接受來自鹵素燈HL之光照射，基板W得到預加熱而溫度上升。再者，由於移載機構10之移載臂11已退避至凹部62之內側，故而不會成為利用鹵素燈HL進行加熱時之障礙。 於利用鹵素燈HL進行預加熱時，基板W之溫度由放射溫度計120測定。即，放射溫度計120自保持於基座74之基板W之背面經由開口部78接收所放射出之紅外光並測定升溫中之基板溫度。測定所得之基板W之溫度傳送至控制部3。控制部3一面對藉由來自鹵素燈HL之光照射而升溫之基板W之溫度是否已達到特定之預加熱溫度T1進行監視，一面控制鹵素燈HL之輸出。即，控制部3基於放射溫度計120所測定出之測定值，以使基板W之溫度成為預加熱溫度T1之方式對鹵素燈HL之輸出進行反饋控制。於本實施形態中，預加熱溫度T1設定為500℃。 於基板W之溫度達到預加熱溫度T1之後，控制部3將基板W暫時維持為該預加熱溫度T1。具體而言，於藉由放射溫度計120而測定之基板W之溫度達到預加熱溫度T1之時間點，控制部3調整鹵素燈HL之輸出，將基板W之溫度大致維持為預加熱溫度T1。 藉由如此地利用鹵素燈HL進行預加熱，而使基板W整體均勻地升溫至預加熱溫度T1。於利用鹵素燈HL進行預加熱之階段，存在更易散熱之基板W之周緣部之溫度低於中央部之傾向，但就鹵素加熱部4中之鹵素燈HL之配設密度而言，與基板W之中央部對向之區域高於與周緣部對向之區域。因此，照射至容易散熱之基板W之周緣部的光量更多，從而可使預加熱階段之基板W之面內溫度分佈均勻。 於基板W之溫度達到預加熱溫度T1並經過特定時間後之時間點，自閃光加熱部5之閃光燈FL對基板W之正面進行閃光照射。於閃光燈FL進行閃光照射時，預先藉由電源單元95將電荷儲存於電容器93中。然後，於電容器93中儲存有電荷之狀態下，自控制部3之脈衝產生器31向IGBT96輸出脈衝信號而對IGBT96進行導通/斷開驅動。 脈衝信號之波形可藉由自輸入部33輸入將脈衝寬度之時間(導通時間)與脈衝間隔之時間(斷開時間)作為參數依次設定所得之製程配方而加以規定。若操作員將此種製程配方自輸入部33輸入至控制部3，則控制部3之波形設定部32根據該製程配方而設定重複導通/斷開之脈衝波形。然後，脈衝產生器31根據波形設定部32所設定之脈衝波形而輸出脈衝信號。其結果，IGBT96之閘極被施加所設定波形之脈衝信號，IGBT96之導通/斷開驅動受到控制。具體而言，於向IGBT96之閘極輸入之脈衝信號導通時IGBT96成為導通狀態，於脈衝信號斷開時IGBT96成為斷開狀態。 又，與自脈衝產生器31輸出之脈衝信號導通之時序同步地，控制部3控制觸發電路97而對觸發電極91施加高電壓(觸發電壓)。於電容器93中儲存有電荷之狀態下對IGBT96之閘極輸入脈衝信號，且與該脈衝信號導通之時序同步地對觸發電極91施加高電壓，藉此，於脈衝信號導通時玻璃管92內之兩端電極間必會流通電流，藉由此時之氙氣之原子或分子之激發會放出光。 如此一來，閃光加熱部5之30根閃光燈FL發光，而對保持於保持部7之基板W之正面照射閃光。此處，於不使用IGBT96而使閃光燈FL發光之情形時，儲存於電容器93中之電荷於1次發光中即會被消耗，從而來自閃光燈FL之輸出波形成為寬度為0.1毫秒至10毫秒左右之單純之單脈衝。與此相對地，本實施形態中，於電路中連接相當於開關元件之IGBT96而對其閘極輸出脈衝信號，藉此，電荷自電容器93向閃光燈FL之供給藉由IGBT96而繼續/中斷，從而對流向閃光燈FL之電流進行導通/斷開控制。其結果，譬如閃光燈FL之發光得到斬波控制，儲存於電容器93中之電荷得以分割地消耗，於極短時間內閃光燈FL重複點亮/熄滅。再者，由於在電路中所流通之電流值完全變成“0”之前下一脈衝便會施加至IGBT96之閘極從而電流值再次增加，故而於閃光燈FL重複點亮/熄滅之期間發光輸出亦不會完全變成“0”。 藉由利用IGBT96對流向閃光燈FL之電流進行導通/斷開控制，可自如地規定閃光燈FL之發光圖案(發光輸出之時間波形)，且可自由地調整發光時間及發光強度。IGBT96之導通/斷開驅動之圖案由自輸入部33輸入之脈衝寬度之時間與脈衝間隔之時間規定。即，藉由將IGBT96組裝至閃光燈FL之驅動電路，僅適當地設定自輸入部33輸入之脈衝寬度之時間與脈衝間隔之時間，即可自如地規定閃光燈FL之發光圖案。 具體而言，例如，若增大自輸入部33輸入之脈衝寬度之時間相對於脈衝間隔之時間的比率，則流向閃光燈FL之電流增大，發光強度增強。相反，若縮小自輸入部33輸入之脈衝寬度之時間相對於脈衝間隔之時間的比率，則流向閃光燈FL之電流減小，發光強度減弱。又，若適當地調整自輸入部33輸入之脈衝間隔之時間與脈衝寬度之時間的比率，則閃光燈FL之發光強度維持為固定。進而，藉由延長自輸入部33輸入之脈衝寬度之時間與脈衝間隔之時間之組合的總時間，可使電流相對較長時間地持續流向閃光燈FL，從而使閃光燈FL之發光時間延長。將閃光燈FL之發光時間設定為0.1毫秒～100毫秒之間，於本實施形態中設定為1.4毫秒。 如此地，自閃光燈FL對基板W之正面以1.4毫秒之照射時間照射閃光而進行基板W之閃光加熱。藉由以1.4毫秒之極短照射時間及較強強度照射閃光，包含二氧化鉿膜102之基板W之正面會瞬間升溫至處理溫度T2。基板W之正面藉由閃光照射所能達到之最高溫度(峰溫度)即處理溫度T2為900℃以上，於本實施形態中為1100℃。於閃光加熱中，閃光之照射時間為100毫秒以下之極短時間，故而基板W之正面溫度於瞬間升溫至處理溫度T2之後，便會立即降溫至預加熱溫度T1附近。 圖10係表示閃光照射時之基板W之行為之圖。雖然藉由以極短照射時間及較強強度照射閃光，包含二氧化鉿膜102之基板W之正面會瞬間升溫至處理溫度T2(1100℃)，但另一方面，基板W之背面幾乎不會自預加熱溫度T1(500℃)升溫。即，會瞬間自基板W之正面朝向背面產生急遽之溫度梯度。其結果，僅基板W之正面發生急遽之熱膨脹，而背面幾乎不發生熱膨脹，故而，如圖10所示，基板W以使正面成為凸面之方式瞬間翹曲。於該瞬間，本實施形態之閃光照射之條件下，最大570 MPa之壓縮應力作用於基板W之正面，並且最大140 MPa之拉伸應力作用於基板W之背面。 於是，形成於基板W正面之二氧化鉿膜102藉由閃光照射加熱至處理溫度T2並承受最大570 MPa之壓縮應力。若壓縮應力作用於已加熱至處理溫度T2之二氧化鉿膜102，則會使二氧化鉿膜102具有結晶構造。 此處，即便與先前之成膜後熱處理(PDA)同樣地將二氧化鉿膜102藉由RTA(Rapid Thermal Annealing，快速熱退火)加熱，二氧化鉿膜102亦具有結晶構造。RTA係藉由來自鹵素燈等持續點亮燈之光照射於以秒為單位之升溫時間內將加熱對象物升溫至目標溫度的熱處理技術。RTA亦係進行急速加熱之常用熱處理技術，但與以毫秒為單位將加熱對象物升溫至目標溫度之閃光燈退火(FLA：Flash Lamp annealing)相比，其升溫速度極慢。因此，於藉由RTA加熱二氧化鉿膜102之情形時，不會產生如上所述之閃光照射時之壓縮應力，而僅加熱二氧化鉿膜102。 圖11係表示閃光加熱後之二氧化鉿膜102之X射線繞射圖案之圖。於該圖中，將藉由RTA而加熱之二氧化鉿膜102之X射線繞射圖案作為比較例用虛線示出。又，於圖11中，標註有“c”者係立方晶構造(Cubic構造)之峰，標註有“m”者係單斜晶構造(Monoclinic構造)之峰。 藉由閃光照射而加熱之二氧化鉿膜102及藉由RTA而加熱之二氧化鉿膜102均具有立方晶構造與單斜晶構造混合存在之結晶構造。但如圖11所示，藉由RTA而加熱之二氧化鉿膜102中出現有單斜晶構造較強之峰，相對地，藉由閃光照射而加熱之二氧化鉿膜102中出現有立方晶構造較強之峰。其表示，藉由閃光照射而加熱之二氧化鉿膜102相較於藉由RTA而加熱之二氧化鉿膜102而言，結晶構造中所存在之立方晶構造之比率變高。 認為如上述般結晶構造中所存在之立方晶構造之比率變高之原因在於：RTA中係僅加熱二氧化鉿膜102，相對地，若進行閃光照射則加熱二氧化鉿膜102之同時會使較強之壓縮應力作用於該二氧化鉿膜102。即，藉由閃光照射會於加熱二氧化鉿膜102之同時使較強之壓縮應力作用於該二氧化鉿膜102，藉此，二氧化鉿膜102之化學電位變化，與藉由RTA而加熱之情形時相比，高填充率之立方晶構造之比率變得更高。於使用二氧化鉿膜102作為場效電晶體之高介電常數閘極絕緣膜之情形時，較佳為立方晶構造之比率較高者。 於閃光加熱處理結束之後，經過特定時間後鹵素燈HL熄滅。藉此，基板W自預加熱溫度T1急速降溫。降溫中之基板W之溫度由放射溫度計120測定，其測定結果傳送至控制部3。控制部3根據放射溫度計120之測定結果對基板W之溫度是否已降溫至特定溫度進行監視。然後，於基板W之溫度降溫至特定溫度以下後，移載機構10之一對移載臂11再次自退避位置水平移動至移載動作位置並上升，藉此頂起銷12自基座74之上表面突出而自基座74接收熱處理後之基板W。繼而，將之前藉由閘閥185而關閉之搬送開口部66打開，藉由裝置外部之搬送機器人搬出載置於頂起銷12上之基板W，至此熱處理裝置1中之基板W之處理完成。 於本實施形態中，將正面形成有二氧化鉿膜102之基板W加熱至特定之預加熱溫度T1後，對該基板W照射閃光而進行閃光加熱。藉由以極短照射時間及較強強度照射閃光，而僅瞬間加熱包含二氧化鉿膜102之基板W之正面，並於將二氧化鉿膜102加熱至處理溫度T2之同時使較強之壓縮應力作用於該二氧化鉿膜102。其結果，與藉由RTA僅加熱二氧化鉿膜102之情形時相比，可提高熱處理後之二氧化鉿膜102的結晶構造中所存在之立方晶構造之比率。即，藉由自閃光燈FL對基板W之正面照射閃光而加熱二氧化鉿膜102並且使壓縮應力作用於該二氧化鉿膜102，可對成膜於基板W上之二氧化鉿膜102所表現出之結晶構造進行調整。 若藉由閃光照射而加熱二氧化鉿膜102並且使較強之壓縮應力作用於該二氧化鉿膜102，則高填充率之立方晶構造之比率變高，其程度取決於發揮作用之壓縮應力之大小。發揮作用之壓縮應力越大，則高填充率之立方晶構造之比率越高。另一方面，作用於二氧化鉿膜102之壓縮應力之大小取決於向基板W正面照射之閃光之照射時間。閃光之照射時間越短，則自基板W之正面向背面傳遞之熱量越小，溫度梯度越大，作用於二氧化鉿膜102之壓縮應力越大。於本實施形態中，將IGBT96組裝至閃光燈FL之驅動電路，利用自輸入部33輸入之脈衝寬度之時間與脈衝間隔之時間之組合的總時間，可調整閃光之照射時間。即，藉由利用自輸入部33輸入之脈衝寬度之時間與脈衝間隔之時間之組合的總時間，調整閃光之照射時間，可使作用於二氧化鉿膜102之壓縮應力之大小變化而控制高填充率之立方晶構造之比率。閃光之照射時間越短，則作用於二氧化鉿膜102之壓縮應力越大，從而可使二氧化鉿膜102之結晶構造中所存在之立方晶構造之比率越高。 以上，對本發明之實施形態進行了說明，但本發明只要不脫離其主旨，則於上述實施形態以外亦能夠進行各種變更。例如，於上述實施形態中，對正面形成有二氧化鉿膜102之基板W照射閃光，但並不限定於此，亦可對正面形成有其他材料薄膜之基板W照射閃光而控制該薄膜之結晶構造。例如，亦可對正面形成有氮化矽薄膜之基板W照射閃光而控制該薄膜之結晶構造。若調整氮化矽之結晶構造，則可使氮化矽之蝕刻速率變化。又，亦可對正面形成有二氧化矽薄膜之基板W照射閃光而控制該薄膜之結晶構造。 概括而言，只要自閃光燈FL對正面形成有薄膜之基板W之正面照射閃光而加熱該薄膜並且使壓縮應力作用於該薄膜即可。藉由利用閃光照射而加熱薄膜並且使壓縮應力作用於該薄膜，能以結晶之填充率變高之方式調整薄膜所表現出之結晶構造。 又，基板W之預加熱溫度T1、處理溫度T2及閃光燈FL之閃光照射時間並不限定於上述實施形態之例，而可設定為適當者。不僅是閃光照射時間，藉由預加熱溫度T1及處理溫度T2亦可使作用於二氧化鉿膜102之壓縮應力變化。 又，於上述實施形態中，閃光加熱部5具備30根閃光燈FL，但並不限定於此，閃光燈FL之根數可設定為任意數量。又，閃光燈FL並不限定於氙氣閃光燈，而亦可為氪氣閃光燈。又，鹵素加熱部4所具備之鹵素燈HL之根數亦並不限定於40根，而可設定為任意數量。 又，於上述實施形態中，藉由將燈絲型之鹵素燈HL作為持續發光1秒以上之持續點亮燈，而將基板W整體加熱至預加熱溫度T1，但並不限定於此，亦可使用放電型之氙弧燈等電弧燈代替鹵素燈HL來作為相同之持續點亮燈，而同樣地加熱基板W。
1‧‧‧熱處理裝置
3‧‧‧控制部
4‧‧‧鹵素加熱部
5‧‧‧閃光加熱部
6‧‧‧腔室
7‧‧‧保持部
10‧‧‧移載機構
11‧‧‧移載臂
12‧‧‧頂起銷
13‧‧‧水平移動機構
14‧‧‧升降機構
31‧‧‧脈衝產生器
32‧‧‧波形設定部
33‧‧‧輸入部
41‧‧‧殼體
43‧‧‧反射器
51‧‧‧殼體
52‧‧‧反射器
53‧‧‧燈光放射窗
61‧‧‧腔室側部
62‧‧‧凹部
63‧‧‧上側腔室窗
64‧‧‧下側腔室窗
65‧‧‧熱處理空間
66‧‧‧搬送開口部
68‧‧‧反射環
69‧‧‧反射環
71‧‧‧基台環
72‧‧‧連結部
74‧‧‧基座
75‧‧‧保持板
75a‧‧‧保持面
76‧‧‧引導環
77‧‧‧基板支持銷
78‧‧‧開口部
79‧‧‧貫通孔
81‧‧‧氣體供給孔
82‧‧‧緩衝空間
83‧‧‧氣體供給管
84‧‧‧閥
85‧‧‧處理氣體供給源
86‧‧‧氣體排出孔
87‧‧‧緩衝空間
88‧‧‧氣體排出管
89‧‧‧閥
91‧‧‧觸發電極
92‧‧‧玻璃管
93‧‧‧電容器
94‧‧‧線圈
95‧‧‧電源單元
96‧‧‧IGBT
97‧‧‧觸發電路
101‧‧‧界面層膜
102‧‧‧二氧化鉿膜
120‧‧‧放射溫度計
185‧‧‧閘閥
190‧‧‧排氣部
191‧‧‧氣體排出管
192‧‧‧閥
FL‧‧‧閃光燈
HL‧‧‧鹵素燈
W‧‧‧基板
圖1係表示本發明之結晶構造控制方法中所使用的熱處理裝置之構成的縱剖視圖。 圖2係表示保持部之整體外觀之立體圖。 圖3係基座之俯視圖。 圖4係基座之剖視圖。 圖5係移載機構之俯視圖。 圖6係移載機構之側視圖。 圖7係表示複數個鹵素燈之配置之俯視圖。 圖8係表示閃光燈之驅動電路之圖。 圖9係表示正面形成有二氧化鉿薄膜之基板之圖。 圖10係表示閃光照射時之基板之行為之圖。 圖11係表示閃光加熱後之二氧化鉿膜之X射線繞射圖案之圖。

Claims (4)

  1. 一種結晶構造控制方法，其特徵在於：其係對形成於基板正面之薄膜之結晶構造進行控制者，且包括：成膜步驟，其係於基板之正面成膜薄膜；及閃光加熱步驟，其係自閃光燈對上述基板之正面照射閃光而加熱上述薄膜，並且藉由於上述基板之正反面產生之溫度差使上述基板翹曲而使壓縮應力作用於上述薄膜。
  2. 如請求項1之結晶構造控制方法，其中於上述閃光加熱步驟中，藉由調整上述閃光之照射時間而使作用於上述薄膜之壓縮應力變化。
  3. 如請求項1或2之結晶構造控制方法，其中於上述閃光加熱步驟之前，進而包括將上述基板加熱至特定之預加熱溫度之預加熱步驟。
  4. 一種熱處理方法，其特徵在於：其係將正面形成有薄膜之基板加熱而控制該薄膜之結晶構造者，且自閃光燈對上述基板之正面照射閃光而加熱上述薄膜，並且藉由於上述基板之正反面產生之溫度差使上述基板翹曲而使壓縮應力作用於上述薄膜。
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