JP7179531B2 - 熱処理方法 - Google Patents
熱処理方法 Download PDFInfo
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- JP7179531B2 JP7179531B2 JP2018159167A JP2018159167A JP7179531B2 JP 7179531 B2 JP7179531 B2 JP 7179531B2 JP 2018159167 A JP2018159167 A JP 2018159167A JP 2018159167 A JP2018159167 A JP 2018159167A JP 7179531 B2 JP7179531 B2 JP 7179531B2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Description
図1は、本発明に係る熱処理装置1の構成を示す縦断面図である。図1の熱処理装置1は、基板として円板形状の半導体ウェハーWに対してフラッシュ光照射を行うことによってその半導体ウェハーWを加熱するフラッシュランプアニール装置である。処理対象となる半導体ウェハーWのサイズは特に限定されるものではないが、例えばφ300mmやφ450mmである(本実施形態ではφ300mm)。熱処理装置1に搬入される前の半導体ウェハーWにはゲート絶縁膜として高誘電率膜(high-k膜)が形成されており、熱処理装置1による加熱処理によって高誘電率膜の成膜後熱処理(PDA:Post Deposition Anneal)が実行される。なお、図1および以降の各図においては、理解容易のため、必要に応じて各部の寸法や数を誇張または簡略化して描いている。
次に、本発明の第2実施形態について説明する。第2実施形態の熱処理装置1の構成および半導体ウェハーWの処理手順は第1実施形態と同様である。第1実施形態では半導体ウェハーWの処理時に、すなわち処理対象となる半導体ウェハーWをサセプタ74に保持した状態でフラッシュ加熱の前後にチャンバー6内の雰囲気を加熱してから減圧処理を行っていた。これに対して、第2実施形態においては、熱処理装置1のメンテナンスを行う際に、チャンバー6内の雰囲気を加熱してから減圧処理を行っている。
以上、本発明の実施の形態について説明したが、この発明はその趣旨を逸脱しない限りにおいて上述したもの以外に種々の変更を行うことが可能である。例えば、第1,第2実施形態においては、チャンバー6内を減圧する前にチャンバー6内の雰囲気を加熱していたが、それに加えてチャンバー6内の減圧が開始された後も継続してハロゲンランプHLからの光照射によってチャンバー6内の雰囲気を加熱するようにしても良い。チャンバー6内の減圧が開始された後もハロゲンランプHLからの光照射によってチャンバー6内の雰囲気を加熱することにより、チャンバー6内をより短時間で減圧することができる。或いは、チャンバー6内の減圧が開始された後にハロゲンランプHLからの光照射によるチャンバー6内の雰囲気加熱を開始するようにしても良い。
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
20,29 放射温度計
28 雰囲気温度計
65 熱処理空間
74 サセプタ
75 保持プレート
77 基板支持ピン
83 ガス供給管
83a 反応性ガス配管
83b 不活性ガス配管
84 バイパス配管
85 バイパスバルブ
88 ガス排気管
89 排気バルブ
91 アンモニア供給源
92 窒素供給源
93 供給元バルブ
96,98 供給バルブ
190 排気部
191 真空圧力計
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (8)
- 基板に光を照射することによって該基板を加熱する熱処理方法であって、
チャンバー内にてサセプタに保持された基板に連続点灯ランプから光照射を行って前記基板を予備加熱した後に、フラッシュランプからの閃光照射によって前記基板をフラッシュ加熱する光照射工程と、
前記チャンバー内の雰囲気を排出して前記チャンバー内を減圧する減圧工程と、
前記減圧工程の前に、前記連続点灯ランプから光照射を行って前記チャンバー内の雰囲気を加熱することによって、当該雰囲気中の気体分子の熱運動を活性化させるとともにガス密度を小さくする加熱工程と、
を備えることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記加熱工程は、さらに前記減圧工程が開始された後も継続して実行されることを特徴とする熱処理方法。 - 請求項1または請求項2記載の熱処理方法において、
前記減圧工程および前記加熱工程は、前記チャンバー内にて前記サセプタに前記基板が保持された状態で実行されることを特徴とする熱処理方法。 - 請求項3記載の熱処理方法において、
前記減圧工程および前記加熱工程は、前記光照射工程の前および後に実行されることを特徴とする熱処理方法。 - 請求項1または請求項2記載の熱処理方法において、
前記減圧工程および前記加熱工程は、前記チャンバー内に基板が存在しない状態で実行されることを特徴とする熱処理方法。 - 請求項5記載の熱処理方法において、
前記減圧工程および前記加熱工程は、前記チャンバーのメンテナンス前に実行されることを特徴とする熱処理方法。 - 請求項1から請求項6のいずれかに記載の熱処理方法において、
前記加熱工程では、前記連続点灯ランプを一定電力で点灯して前記チャンバー内の雰囲気を加熱することを特徴とする熱処理方法。 - 請求項1から請求項6のいずれかに記載の熱処理方法において、
前記加熱工程では、前記チャンバー内の雰囲気温度または前記サセプタの温度に基づいて前記連続点灯ランプの出力をフィードバック制御することを特徴とする熱処理方法。
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JP2018159167A JP7179531B2 (ja) | 2018-08-28 | 2018-08-28 | 熱処理方法 |
TW108123380A TWI740173B (zh) | 2018-08-28 | 2019-07-03 | 熱處理方法 |
US16/518,522 US10930521B2 (en) | 2018-08-28 | 2019-07-22 | Light irradiation type heat treatment method |
KR1020190090084A KR102291511B1 (ko) | 2018-08-28 | 2019-07-25 | 열처리 방법 |
CN201910676989.0A CN110867370A (zh) | 2018-08-28 | 2019-07-25 | 热处理方法 |
US17/152,260 US11764073B2 (en) | 2018-08-28 | 2021-01-19 | Light irradiation type heat treatment method |
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JP (1) | JP7179531B2 (ja) |
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JP6960344B2 (ja) * | 2018-01-26 | 2021-11-05 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP7446881B2 (ja) | 2020-03-23 | 2024-03-11 | 株式会社Screenホールディングス | 熱処理方法 |
Citations (3)
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JP2010084169A (ja) | 2008-09-30 | 2010-04-15 | Canon Anelva Corp | 真空排気方法、真空排気プログラム、および真空処理装置 |
JP2018018847A (ja) | 2016-07-25 | 2018-02-01 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP2019220576A (ja) | 2018-06-20 | 2019-12-26 | 株式会社Screenホールディングス | 熱処理装置および熱処理装置の雰囲気置換方法 |
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JPH11200031A (ja) * | 1997-12-25 | 1999-07-27 | Applied Materials Inc | スパッタリング装置及びその高速真空排気方法 |
JP3798674B2 (ja) | 2001-10-29 | 2006-07-19 | 大日本スクリーン製造株式会社 | 熱処理装置および熱処理方法 |
JP5291965B2 (ja) * | 2008-03-25 | 2013-09-18 | 大日本スクリーン製造株式会社 | 熱処理装置 |
JP2012174820A (ja) * | 2011-02-21 | 2012-09-10 | Sokudo Co Ltd | 熱処理方法および熱処理装置 |
TWI566300B (zh) * | 2011-03-23 | 2017-01-11 | 斯克林集團公司 | 熱處理方法及熱處理裝置 |
JP5955670B2 (ja) * | 2011-09-26 | 2016-07-20 | 株式会社Screenホールディングス | 熱処理方法 |
US9330949B2 (en) * | 2012-03-27 | 2016-05-03 | SCREEN Holdings Co., Ltd. | Heat treatment apparatus for heating substrate by irradiating substrate with flash of light |
US10121683B2 (en) | 2015-08-26 | 2018-11-06 | SCREEN Holdings Co., Ltd. | Light-irradiation heat treatment method and heat treatment apparatus |
JP6665032B2 (ja) | 2015-08-26 | 2020-03-13 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP6539578B2 (ja) * | 2015-12-22 | 2019-07-03 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
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JP2010084169A (ja) | 2008-09-30 | 2010-04-15 | Canon Anelva Corp | 真空排気方法、真空排気プログラム、および真空処理装置 |
JP2018018847A (ja) | 2016-07-25 | 2018-02-01 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP2019220576A (ja) | 2018-06-20 | 2019-12-26 | 株式会社Screenホールディングス | 熱処理装置および熱処理装置の雰囲気置換方法 |
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TW202013533A (zh) | 2020-04-01 |
US20200075344A1 (en) | 2020-03-05 |
TWI740173B (zh) | 2021-09-21 |
JP2020035811A (ja) | 2020-03-05 |
US11764073B2 (en) | 2023-09-19 |
US10930521B2 (en) | 2021-02-23 |
KR102291511B1 (ko) | 2021-08-19 |
KR20200024711A (ko) | 2020-03-09 |
CN110867370A (zh) | 2020-03-06 |
US20210151328A1 (en) | 2021-05-20 |
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