JP2018018847A - 熱処理方法および熱処理装置 - Google Patents
熱処理方法および熱処理装置 Download PDFInfo
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Abstract
【解決手段】処理対象となる半導体ウェハーを収容したチャンバー内を大気圧よりも低い気圧P1に減圧した状態にて半導体ウェハーを100℃以上200℃以下の第1予備加熱温度T1に加熱する。次に、チャンバー内を気圧P2にまで復圧した状態にて半導体ウェハーを500℃以上700℃以下の第2予備加熱温度T2に昇温して予備加熱を行った後、半導体ウェハーの表面にフラッシュランプからフラッシュ光を照射する。半導体ウェハーを比較的低温の第1予備加熱温度T1に加熱することによって、半導体ウェハーの表面に微量に吸着していた水分等を当該表面から脱離させることができ、そのような吸着水分等に由来する酸素を極力排除した状態でフラッシュ加熱処理を行うことができる。
【選択図】図10
Description
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
61 チャンバー側部
63 上側チャンバー窓
64 下側チャンバー窓
65 熱処理空間
74 サセプター
85 ガス供給源
90,196 流量調整バルブ
101 基材
102 シリコン酸化膜
103 高誘電率膜
190 排気部
191 排気ポンプ
192,193,194 排気バルブ
197,198,199 バイパスライン
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (7)
- 基板にフラッシュ光を照射することによって該基板を加熱する熱処理方法であって、
基板をチャンバー内に搬入する搬入工程と、
前記チャンバー内にて前記基板を100℃以上200℃以下の第1予備加熱温度にて加熱する脱ガス工程と、
前記チャンバー内にて前記基板を第1予備加熱温度よりも高温の第2予備加熱温度にて加熱する予備加熱工程と、
前記基板の表面にフラッシュランプからフラッシュ光を照射する照射工程と、
を備えることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記脱ガス工程では、前記チャンバー内の気体を排出して前記チャンバー内を大気圧よりも低い第1の圧力に減圧することを特徴とする熱処理方法。 - 請求項2記載の熱処理方法において、
前記予備加熱工程では、前記チャンバー内を第1の圧力から第1の圧力よりも高い第2の圧力に復圧することを特徴とする熱処理方法。 - 基板にフラッシュ光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバーに収容された前記基板を予備加熱する予備加熱手段と、
前記チャンバー内にて予備加熱された前記基板の表面にフラッシュ光を照射するフラッシュランプと、
前記基板を100℃以上200℃以下の第1予備加熱温度にて加熱した後に前記基板を第1予備加熱温度よりも高温の第2予備加熱温度にて加熱するように前記予備加熱手段を制御する制御部と、
を備えることを特徴とする熱処理装置。 - 請求項4記載の熱処理装置において、
前記チャンバー内の雰囲気を排気する排気部と、
前記チャンバーに所定の処理ガスを供給するガス供給部と、
をさらに備え、
前記制御部は、前記基板を第1予備加熱温度にて加熱するときに前記チャンバー内の気体を排出して前記チャンバー内を大気圧よりも低い第1の圧力に減圧するように前記排気部を制御することを特徴とする熱処理装置。 - 請求項5記載の熱処理装置において、
前記制御部は、前記基板を第2予備加熱温度にて加熱するときに前記チャンバー内を第1の圧力から第1の圧力よりも高い第2の圧力に復圧するように前記排気部および前記ガス供給部を制御することを特徴とする熱処理装置。 - 請求項4から請求項6のいずれかに記載の熱処理装置において、
前記予備加熱手段はハロゲンランプを含むことを特徴とする熱処理装置。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020044773A1 (ja) * | 2018-08-30 | 2020-03-05 | 株式会社Screenホールディングス | ゲート絶縁膜の形成方法および熱処理方法 |
JP2020035811A (ja) * | 2018-08-28 | 2020-03-05 | 株式会社Screenホールディングス | 熱処理方法 |
CN113078060A (zh) * | 2020-01-06 | 2021-07-06 | 株式会社国际电气 | 半导体装置的制造方法、基板处理装置和存储介质 |
KR20210124945A (ko) * | 2019-03-08 | 2021-10-15 | 가부시키가이샤 스크린 홀딩스 | 열처리 방법 및 열처리 장치 |
Families Citing this family (3)
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JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP2022017022A (ja) * | 2020-07-13 | 2022-01-25 | ウシオ電機株式会社 | 光加熱装置 |
CN113867110A (zh) * | 2021-09-23 | 2021-12-31 | 上海稷以科技有限公司 | 一种改善高温去胶工艺中光刻胶皱缩的方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0955480A (ja) * | 1995-08-16 | 1997-02-25 | Sony Corp | 半導体装置の製造方法 |
JP2004356500A (ja) * | 2003-05-30 | 2004-12-16 | Renesas Technology Corp | 電子デバイスの製造方法 |
JP2005064052A (ja) * | 2003-08-15 | 2005-03-10 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
JP2009164635A (ja) * | 2009-04-15 | 2009-07-23 | Nec Corp | 高誘電率薄膜を用いた半導体装置の製造方法 |
JP2010165713A (ja) * | 2009-01-13 | 2010-07-29 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
JP2013120859A (ja) * | 2011-12-07 | 2013-06-17 | Ulvac Japan Ltd | リフロー法及び半導体装置の製造方法 |
JP2013207033A (ja) * | 2012-03-28 | 2013-10-07 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
WO2014002603A1 (ja) * | 2012-06-28 | 2014-01-03 | 住友電気工業株式会社 | 半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8461033B2 (en) | 2009-01-13 | 2013-06-11 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus and method for heating substrate by light-irradiation |
JP6026090B2 (ja) | 2011-09-26 | 2016-11-16 | 株式会社Screenホールディングス | 熱処理方法 |
JP2016121380A (ja) | 2014-12-25 | 2016-07-07 | 株式会社神戸製鋼所 | 熱処理装置 |
TWI688004B (zh) * | 2016-02-01 | 2020-03-11 | 美商瑪森科技公司 | 毫秒退火系統之預熱方法 |
-
2016
- 2016-07-25 JP JP2016145235A patent/JP6799960B2/ja active Active
-
2017
- 2017-04-04 US US16/312,872 patent/US11574824B2/en active Active
- 2017-04-04 WO PCT/JP2017/014016 patent/WO2018020742A1/ja active Application Filing
- 2017-05-08 TW TW106115137A patent/TWI657505B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0955480A (ja) * | 1995-08-16 | 1997-02-25 | Sony Corp | 半導体装置の製造方法 |
JP2004356500A (ja) * | 2003-05-30 | 2004-12-16 | Renesas Technology Corp | 電子デバイスの製造方法 |
JP2005064052A (ja) * | 2003-08-15 | 2005-03-10 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
JP2010165713A (ja) * | 2009-01-13 | 2010-07-29 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
JP2009164635A (ja) * | 2009-04-15 | 2009-07-23 | Nec Corp | 高誘電率薄膜を用いた半導体装置の製造方法 |
JP2013120859A (ja) * | 2011-12-07 | 2013-06-17 | Ulvac Japan Ltd | リフロー法及び半導体装置の製造方法 |
JP2013207033A (ja) * | 2012-03-28 | 2013-10-07 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
WO2014002603A1 (ja) * | 2012-06-28 | 2014-01-03 | 住友電気工業株式会社 | 半導体装置の製造方法 |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020035811A (ja) * | 2018-08-28 | 2020-03-05 | 株式会社Screenホールディングス | 熱処理方法 |
US11764073B2 (en) | 2018-08-28 | 2023-09-19 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment method |
JP7179531B2 (ja) | 2018-08-28 | 2022-11-29 | 株式会社Screenホールディングス | 熱処理方法 |
JP2020035914A (ja) * | 2018-08-30 | 2020-03-05 | 株式会社Screenホールディングス | ゲート絶縁膜の形成方法および熱処理方法 |
KR20210035268A (ko) * | 2018-08-30 | 2021-03-31 | 가부시키가이샤 스크린 홀딩스 | 게이트 절연막의 형성 방법 및 열처리 방법 |
KR102577600B1 (ko) * | 2018-08-30 | 2023-09-12 | 가부시키가이샤 스크린 홀딩스 | 게이트 절연막의 형성 방법 및 열처리 방법 |
WO2020044773A1 (ja) * | 2018-08-30 | 2020-03-05 | 株式会社Screenホールディングス | ゲート絶縁膜の形成方法および熱処理方法 |
JP7157596B2 (ja) | 2018-08-30 | 2022-10-20 | 株式会社Screenホールディングス | ゲート絶縁膜の形成方法および熱処理方法 |
KR102538971B1 (ko) * | 2019-03-08 | 2023-06-01 | 가부시키가이샤 스크린 홀딩스 | 열처리 방법 및 열처리 장치 |
US11901200B2 (en) | 2019-03-08 | 2024-02-13 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment method and heat treatment apparatus |
KR20210124945A (ko) * | 2019-03-08 | 2021-10-15 | 가부시키가이샤 스크린 홀딩스 | 열처리 방법 및 열처리 장치 |
US11322375B2 (en) | 2019-03-08 | 2022-05-03 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment method and heat treatment apparatus |
JP7030858B2 (ja) | 2020-01-06 | 2022-03-07 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
KR102501657B1 (ko) * | 2020-01-06 | 2023-02-20 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 |
JP2021111636A (ja) * | 2020-01-06 | 2021-08-02 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
KR20210088427A (ko) * | 2020-01-06 | 2021-07-14 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 |
CN113078060A (zh) * | 2020-01-06 | 2021-07-06 | 株式会社国际电气 | 半导体装置的制造方法、基板处理装置和存储介质 |
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