JP7157596B2 - ゲート絶縁膜の形成方法および熱処理方法 - Google Patents
ゲート絶縁膜の形成方法および熱処理方法 Download PDFInfo
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- JP7157596B2 JP7157596B2 JP2018161726A JP2018161726A JP7157596B2 JP 7157596 B2 JP7157596 B2 JP 7157596B2 JP 2018161726 A JP2018161726 A JP 2018161726A JP 2018161726 A JP2018161726 A JP 2018161726A JP 7157596 B2 JP7157596 B2 JP 7157596B2
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- 238000010438 heat treatment Methods 0.000 title claims description 121
- 238000000034 method Methods 0.000 title claims description 33
- 230000015572 biosynthetic process Effects 0.000 title description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 113
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 39
- 229910002601 GaN Inorganic materials 0.000 claims description 36
- 235000012239 silicon dioxide Nutrition 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 25
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 9
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 9
- 238000003795 desorption Methods 0.000 claims description 8
- 229910052736 halogen Inorganic materials 0.000 description 60
- 150000002367 halogens Chemical class 0.000 description 60
- 238000012546 transfer Methods 0.000 description 56
- 239000007789 gas Substances 0.000 description 41
- 230000007246 mechanism Effects 0.000 description 31
- 238000012545 processing Methods 0.000 description 18
- 239000010453 quartz Substances 0.000 description 17
- 230000005855 radiation Effects 0.000 description 13
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 229910052724 xenon Inorganic materials 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000005527 interface trap Effects 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28264—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
65 熱処理空間
74 サセプタ
75 保持プレート
77 支持ピン
91 載置板
95 ゲート絶縁膜
FL フラッシュランプ
HL ハロゲンランプ
W GaN基板
Claims (6)
- 窒化ガリウムの基板上に二酸化ケイ素または酸化ガリウムのゲート絶縁膜を成膜する成膜工程と、
載置板の凹部に載置された前記基板および前記ゲート絶縁膜を10ナノ秒以上100ミリ秒以下の熱処理時間にて加熱して窒化ガリウムからの窒素の脱離を抑制して前記ゲート絶縁膜にガリウムを拡散させることなく前記ゲート絶縁膜と前記基板との界面に存在していたトラップを減少させるアニール工程と、
を備えることを特徴とするゲート絶縁膜の形成方法。 - 請求項1記載のゲート絶縁膜の形成方法において、
前記アニール工程での前記ゲート絶縁膜の最高到達温度は800℃以上1400℃以下であることを特徴とするゲート絶縁膜の形成方法。 - 二酸化ケイ素または酸化ガリウムのゲート絶縁膜が成膜された窒化ガリウムの基板を載置板の凹部に載置した状態でチャンバー内に搬入する搬入工程と、
前記載置板に載置された前記基板の表面にフラッシュランプから1秒未満の照射時間にてフラッシュ光を照射して前記表面および前記ゲート絶縁膜を加熱して窒化ガリウムからの窒素の脱離を抑制して前記ゲート絶縁膜にガリウムを拡散させることなく前記ゲート絶縁膜と前記基板との界面に存在していたトラップを減少させる光照射工程と、
を備えることを特徴とする熱処理方法。 - 請求項3記載の熱処理方法において、
前記光照射工程での前記ゲート絶縁膜の最高到達温度は800℃以上1400℃以下であることを特徴とする熱処理方法。 - 請求項3または請求項4に記載の熱処理方法において、
前記光照射工程の前に、連続点灯ランプからの光照射によって前記基板を600℃以上800℃以下に予備加熱する予備加熱工程をさらに備えることを特徴とする熱処理方法。 - 二酸化ケイ素または酸化ガリウムのゲート絶縁膜が成膜された窒化ガリウムの基板を載置板の凹部に載置した状態でチャンバー内に搬入する搬入工程と、
前記載置板に載置された前記基板および前記ゲート絶縁膜を10ナノ秒以上100ミリ秒以下の熱処理時間にて加熱して窒化ガリウムからの窒素の脱離を抑制して前記ゲート絶縁膜にガリウムを拡散させることなく前記ゲート絶縁膜と前記基板との界面に存在していたトラップを減少させるアニール工程と、
を備えることを特徴とする熱処理方法。
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JP2018161726A JP7157596B2 (ja) | 2018-08-30 | 2018-08-30 | ゲート絶縁膜の形成方法および熱処理方法 |
TW108115650A TWI699449B (zh) | 2018-08-30 | 2019-05-07 | 閘極絕緣膜之形成方法及熱處理方法 |
US17/270,481 US20210327709A1 (en) | 2018-08-30 | 2019-07-01 | Method for forming gate insulator film and heat treatment method |
KR1020217005630A KR102577600B1 (ko) | 2018-08-30 | 2019-07-01 | 게이트 절연막의 형성 방법 및 열처리 방법 |
PCT/JP2019/026043 WO2020044773A1 (ja) | 2018-08-30 | 2019-07-01 | ゲート絶縁膜の形成方法および熱処理方法 |
KR1020237030033A KR102676481B1 (ko) | 2018-08-30 | 2019-07-01 | 게이트 절연막의 형성 방법 및 열처리 방법 |
JP2022161501A JP7338021B2 (ja) | 2018-08-30 | 2022-10-06 | ゲート絶縁膜の形成方法 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001345313A (ja) | 2000-05-31 | 2001-12-14 | Ebara Corp | 基板処理装置 |
JP2005019650A (ja) | 2003-06-25 | 2005-01-20 | Toshiba Corp | 処理装置、製造装置、処理方法及び電子装置の製造方法 |
JP2008306051A (ja) | 2007-06-08 | 2008-12-18 | Rohm Co Ltd | 半導体装置およびその製造方法 |
JP2017092095A (ja) | 2015-11-04 | 2017-05-25 | 株式会社Screenホールディングス | 熱処理装置 |
US20180012811A1 (en) | 2016-07-07 | 2018-01-11 | Semiconductor Manufacturing International (Shanghai)Corporation | Semiconductor device and fabrication method thereof |
JP2018018847A (ja) | 2016-07-25 | 2018-02-01 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS6271231A (ja) * | 1985-09-25 | 1987-04-01 | Toshiba Corp | サセプタ |
JPH07183235A (ja) * | 1993-12-24 | 1995-07-21 | Semiconductor Energy Lab Co Ltd | 多目的基板処理装置およびその動作方法および薄膜集積回路の作製方法 |
KR20030095313A (ko) * | 2002-06-07 | 2003-12-18 | 후지 샤신 필름 가부시기가이샤 | 레이저 어닐링장치 및 레이저 박막형성장치 |
US9498845B2 (en) * | 2007-11-08 | 2016-11-22 | Applied Materials, Inc. | Pulse train annealing method and apparatus |
JP4805299B2 (ja) * | 2008-03-28 | 2011-11-02 | 古河電気工業株式会社 | 電界効果トランジスタの製造方法 |
JP5522979B2 (ja) * | 2009-06-16 | 2014-06-18 | 国立大学法人東北大学 | 成膜方法及び処理システム |
JP6241100B2 (ja) | 2013-07-17 | 2017-12-06 | 豊田合成株式会社 | Mosfet |
TW201517133A (zh) * | 2013-10-07 | 2015-05-01 | Applied Materials Inc | 使用熱佈植與奈秒退火致使銦鋁鎵氮化物材料系統中摻雜劑的高活化 |
US10658469B2 (en) * | 2014-05-01 | 2020-05-19 | Renesas Electronics Corporation | Semiconductor device including a plurality of nitride semiconductor layers |
JP2016054250A (ja) * | 2014-09-04 | 2016-04-14 | 豊田合成株式会社 | 半導体装置、製造方法、方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2001345313A (ja) | 2000-05-31 | 2001-12-14 | Ebara Corp | 基板処理装置 |
JP2005019650A (ja) | 2003-06-25 | 2005-01-20 | Toshiba Corp | 処理装置、製造装置、処理方法及び電子装置の製造方法 |
JP2008306051A (ja) | 2007-06-08 | 2008-12-18 | Rohm Co Ltd | 半導体装置およびその製造方法 |
JP2017092095A (ja) | 2015-11-04 | 2017-05-25 | 株式会社Screenホールディングス | 熱処理装置 |
US20180012811A1 (en) | 2016-07-07 | 2018-01-11 | Semiconductor Manufacturing International (Shanghai)Corporation | Semiconductor device and fabrication method thereof |
JP2018018847A (ja) | 2016-07-25 | 2018-02-01 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
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KR102577600B1 (ko) | 2023-09-12 |
KR20210035268A (ko) | 2021-03-31 |
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KR102676481B1 (ko) | 2024-06-19 |
JP7338021B2 (ja) | 2023-09-04 |
JP2020035914A (ja) | 2020-03-05 |
US20210327709A1 (en) | 2021-10-21 |
KR20230131960A (ko) | 2023-09-14 |
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JP2022180648A (ja) | 2022-12-06 |
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