JP7211789B2 - 熱処理方法および熱処理装置 - Google Patents
熱処理方法および熱処理装置 Download PDFInfo
- Publication number
- JP7211789B2 JP7211789B2 JP2018233272A JP2018233272A JP7211789B2 JP 7211789 B2 JP7211789 B2 JP 7211789B2 JP 2018233272 A JP2018233272 A JP 2018233272A JP 2018233272 A JP2018233272 A JP 2018233272A JP 7211789 B2 JP7211789 B2 JP 7211789B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- chamber
- susceptor
- heat treatment
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 title claims description 137
- 238000000034 method Methods 0.000 title claims description 31
- 238000012546 transfer Methods 0.000 claims description 147
- 238000001816 cooling Methods 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 46
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 275
- 239000004065 semiconductor Substances 0.000 description 204
- 238000012545 processing Methods 0.000 description 136
- 229910052736 halogen Inorganic materials 0.000 description 57
- 150000002367 halogens Chemical class 0.000 description 57
- 230000007246 mechanism Effects 0.000 description 48
- 239000007789 gas Substances 0.000 description 43
- 230000005855 radiation Effects 0.000 description 21
- 239000012535 impurity Substances 0.000 description 18
- 239000010453 quartz Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 230000008569 process Effects 0.000 description 16
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 13
- 229910052724 xenon Inorganic materials 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000000137 annealing Methods 0.000 description 8
- 230000004913 activation Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000000969 carrier Substances 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
4 ハロゲンランプハウス
5 フラッシュランプハウス
6 処理チャンバー
7 保持部
10 移載機構
65 熱処理空間
74 サセプタ
100 熱処理装置
101 インデクサ部
110 ロードポート
110a 第1ロードポート
110b 第2ロードポート
110c 第3ロードポート
120 受渡ロボット
130,140 冷却部
131 第1クールチャンバー
141 第2クールチャンバー
150 搬送ロボット
151a,151b 搬送ハンド
160 熱処理部
C キャリア
DC ダミーキャリア
DW ダミーウェハー
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (6)
- 基板に対して熱処理を行う熱処理方法であって、
チャンバー内にてサセプタに載置した基板に加熱源から加熱を行う加熱工程と、
ダミーウェハーを冷却する冷却工程と、
前記加熱工程が終了した後に、前記冷却工程で冷却された前記ダミーウェハーを前記サセプタに載置して前記サセプタの温度を降温させる温調工程と、
を備え、
前記温調工程では、前記サセプタの温度を前記基板の後続のロットの熱処理を行うときに前記サセプタの温度が一定となる安定温度に降温させることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記サセプタの温度が前記安定温度にまで降温していない場合には、前記冷却工程と前記温調工程とを繰り返すことを特徴とする熱処理方法。 - 請求項1または請求項2記載の熱処理方法において、
前記冷却工程では、前記ダミーウェハーを室温以下にまで冷却することを特徴とする熱処理方法。 - 基板に対して熱処理を行う熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバー内にて前記基板を載置するサセプタと、
前記サセプタに載置された前記基板を加熱する加熱源と、
ダミーウェハーを冷却する冷却部と、
前記ダミーウェハーを前記冷却部から前記チャンバーに搬送する搬送部と、
を備え、
前記基板に対する加熱処理が終了した後に、前記冷却部にて冷却された前記ダミーウェハーを前記サセプタに載置して前記サセプタの温度を前記基板の後続のロットの熱処理を行うときに前記サセプタの温度が一定となる安定温度に降温させることを特徴とする熱処理装置。 - 請求項4記載の熱処理装置において、
前記サセプタの温度が前記安定温度にまで降温していない場合には、前記ダミーウェハーの冷却と前記ダミーウェハーによる前記サセプタの温度の降温とを繰り返すことを特徴とする熱処理装置。 - 請求項4または請求項5記載の熱処理装置において、
前記冷却部は、前記ダミーウェハーを室温以下にまで冷却することを特徴とする熱処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018233272A JP7211789B2 (ja) | 2018-12-13 | 2018-12-13 | 熱処理方法および熱処理装置 |
TW108140815A TWI720683B (zh) | 2018-12-13 | 2019-11-11 | 熱處理方法及熱處理裝置 |
PCT/JP2019/047236 WO2020121895A1 (ja) | 2018-12-13 | 2019-12-03 | 熱処理方法および熱処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018233272A JP7211789B2 (ja) | 2018-12-13 | 2018-12-13 | 熱処理方法および熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020096093A JP2020096093A (ja) | 2020-06-18 |
JP7211789B2 true JP7211789B2 (ja) | 2023-01-24 |
Family
ID=71076035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018233272A Active JP7211789B2 (ja) | 2018-12-13 | 2018-12-13 | 熱処理方法および熱処理装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7211789B2 (ja) |
TW (1) | TWI720683B (ja) |
WO (1) | WO2020121895A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024029126A1 (ja) * | 2022-08-01 | 2024-02-08 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法、及びプログラム |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002299319A (ja) | 2001-03-29 | 2002-10-11 | Hitachi Kokusai Electric Inc | 基板処理装置 |
WO2011043490A1 (ja) | 2009-10-09 | 2011-04-14 | キヤノンアネルバ株式会社 | 真空加熱冷却装置 |
JP2018085369A (ja) | 2016-11-21 | 2018-05-31 | 日新イオン機器株式会社 | 半導体製造装置、基板支持装置の冷却方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2605589B2 (ja) * | 1993-07-27 | 1997-04-30 | 日本電気株式会社 | 減圧室の半導体基板加熱装置 |
JP3102832B2 (ja) * | 1994-07-21 | 2000-10-23 | 大日本スクリーン製造株式会社 | 基板の熱処理方法及び熱処理装置 |
-
2018
- 2018-12-13 JP JP2018233272A patent/JP7211789B2/ja active Active
-
2019
- 2019-11-11 TW TW108140815A patent/TWI720683B/zh active
- 2019-12-03 WO PCT/JP2019/047236 patent/WO2020121895A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002299319A (ja) | 2001-03-29 | 2002-10-11 | Hitachi Kokusai Electric Inc | 基板処理装置 |
WO2011043490A1 (ja) | 2009-10-09 | 2011-04-14 | キヤノンアネルバ株式会社 | 真空加熱冷却装置 |
JP2018085369A (ja) | 2016-11-21 | 2018-05-31 | 日新イオン機器株式会社 | 半導体製造装置、基板支持装置の冷却方法 |
Also Published As
Publication number | Publication date |
---|---|
TW202038337A (zh) | 2020-10-16 |
JP2020096093A (ja) | 2020-06-18 |
TWI720683B (zh) | 2021-03-01 |
WO2020121895A1 (ja) | 2020-06-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6084479B2 (ja) | 熱処理方法、熱処理装置およびサセプター | |
TWI670773B (zh) | 熱處理裝置及熱處理方法 | |
JP7315331B2 (ja) | 熱処理方法および熱処理装置 | |
JP6863780B2 (ja) | 熱処理方法および熱処理装置 | |
TWI781350B (zh) | 熱處理方法及熱處理裝置 | |
JP7199888B2 (ja) | 熱処理方法および熱処理装置 | |
JP7288745B2 (ja) | 熱処理方法および熱処理装置 | |
KR102303333B1 (ko) | 열처리 방법 및 열처리 장치 | |
TWI757561B (zh) | 熱處理方法 | |
JP7091221B2 (ja) | 熱処理方法および熱処理装置 | |
JP2024116492A (ja) | 熱処理方法および熱処理装置 | |
JP7211789B2 (ja) | 熱処理方法および熱処理装置 | |
WO2020166249A1 (ja) | 熱処理方法および熱処理装置 | |
JP7080145B2 (ja) | 熱処理方法および熱処理装置 | |
JP7304151B2 (ja) | 熱処理方法および熱処理装置 | |
JP7208100B2 (ja) | 熱処理装置および熱処理方法 | |
JP7294802B2 (ja) | 熱処理方法および熱処理装置 | |
JP2023045652A (ja) | 熱処理方法および熱処理装置 | |
JP2024116736A (ja) | 熱処理方法 | |
JP2018098315A (ja) | 熱処理方法および熱処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210618 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220705 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220823 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230110 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230112 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7211789 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |