JP7288745B2 - 熱処理方法および熱処理装置 - Google Patents
熱処理方法および熱処理装置 Download PDFInfo
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- JP7288745B2 JP7288745B2 JP2018171392A JP2018171392A JP7288745B2 JP 7288745 B2 JP7288745 B2 JP 7288745B2 JP 2018171392 A JP2018171392 A JP 2018171392A JP 2018171392 A JP2018171392 A JP 2018171392A JP 7288745 B2 JP7288745 B2 JP 7288745B2
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- 238000010438 heat treatment Methods 0.000 title claims description 158
- 238000000034 method Methods 0.000 title claims description 23
- 235000012431 wafers Nutrition 0.000 claims description 326
- 238000012545 processing Methods 0.000 claims description 145
- 238000003860 storage Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 description 194
- 238000012546 transfer Methods 0.000 description 122
- 229910052736 halogen Inorganic materials 0.000 description 61
- 150000002367 halogens Chemical class 0.000 description 61
- 230000007246 mechanism Effects 0.000 description 45
- 239000007789 gas Substances 0.000 description 44
- 238000001816 cooling Methods 0.000 description 25
- 239000000758 substrate Substances 0.000 description 24
- 239000012535 impurity Substances 0.000 description 18
- 239000010453 quartz Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- 238000007726 management method Methods 0.000 description 14
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 13
- 230000005855 radiation Effects 0.000 description 12
- 229910052724 xenon Inorganic materials 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000000969 carrier Substances 0.000 description 10
- 230000004913 activation Effects 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000009717 reactive processing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Tunnel Furnaces (AREA)
Description
4 ハロゲンランプハウス
5 フラッシュランプハウス
6 処理チャンバー
7 保持部
10 移載機構
31 登録部
33 入力部
34 表示部
35 磁気ディスク
39 ダミーデータベース
65 熱処理空間
74 サセプタ
100 熱処理装置
101 インデクサ部
130,140 冷却部
150 搬送ロボット
151a,151b 搬送ハンド
160 熱処理部
210 認証画面
230 アライメント部
250 ダミーウェハー管理テーブル
255 処理履歴表示欄
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (2)
- キャリア内に収容されたダミーウェハーを管理する熱処理方法であって、
複数のダミーウェハーを収容したキャリアを熱処理装置に搬入する搬入工程と、
前記キャリアをダミーウェハー専用のダミーキャリアとして登録する登録工程と、
前記複数のダミーウェハーに加熱処理を行う加熱工程と、
前記複数のダミーウェハーのそれぞれの処理履歴を前記キャリアと関連付けて記憶する記憶工程と、
前記記憶工程にて記憶された前記複数のダミーウェハーのそれぞれの処理履歴を表示する表示工程と、
を備え、
前記記憶工程では、前記複数のダミーウェハーのそれぞれについての連続点灯ランプによる予備加熱の回数およびフラッシュランプによるフラッシュ加熱の回数と前記キャリアのキャリアIDとを関連付けて登録したダミーデータベースを記憶し、
前記複数のダミーウェハーのいずれかのダミーウェハーに対する加熱処理が完了したときには、前記ダミーデータベースに記録されている当該ダミーウェハーの予備加熱の回数およびフラッシュ加熱の回数を更新することを特徴とする熱処理方法。 - キャリア内に収容されたダミーウェハーを管理する熱処理装置であって、
複数のダミーウェハーを収容したキャリアを受け入れる受入部と、
前記受入部に搬入された前記キャリアをダミーウェハー専用のダミーキャリアとして登録する登録部と、
前記複数のダミーウェハーに加熱処理を行う加熱部と、
前記複数のダミーウェハーのそれぞれの処理履歴を前記キャリアと関連付けて記憶する記憶部と、
前記記憶部に記憶された前記複数のダミーウェハーのそれぞれの処理履歴を表示する表示部と、
を備え、
前記加熱部は連続点灯ランプおよびフラッシュランプを含み、
前記記憶部は、前記複数のダミーウェハーのそれぞれについての前記連続点灯ランプによる予備加熱の回数および前記フラッシュランプによるフラッシュ加熱の回数と前記キャリアのキャリアIDとを関連付けて登録したダミーデータベースを記憶し、
前記複数のダミーウェハーのいずれかのダミーウェハーに対する加熱処理が完了したときには、前記ダミーデータベースに記録されている当該ダミーウェハーの予備加熱の回数およびフラッシュ加熱の回数を更新することを特徴とする熱処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018171392A JP7288745B2 (ja) | 2018-09-13 | 2018-09-13 | 熱処理方法および熱処理装置 |
TW108124599A TWI786315B (zh) | 2018-09-13 | 2019-07-12 | 熱處理方法及熱處理裝置 |
CN201910639962.4A CN110896030A (zh) | 2018-09-13 | 2019-07-16 | 热处理方法及热处理装置 |
US16/518,481 US11289344B2 (en) | 2018-09-13 | 2019-07-22 | Heat treatment method and heat treatment apparatus for managing dummy wafer |
KR1020190090864A KR102240491B1 (ko) | 2018-09-13 | 2019-07-26 | 열처리 방법 및 열처리 장치 |
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JP2018171392A JP7288745B2 (ja) | 2018-09-13 | 2018-09-13 | 熱処理方法および熱処理装置 |
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JP2020043288A JP2020043288A (ja) | 2020-03-19 |
JP7288745B2 true JP7288745B2 (ja) | 2023-06-08 |
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US (1) | US11289344B2 (ja) |
JP (1) | JP7288745B2 (ja) |
KR (1) | KR102240491B1 (ja) |
CN (1) | CN110896030A (ja) |
TW (1) | TWI786315B (ja) |
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US10510476B2 (en) * | 2013-09-27 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Slow wave inductive structure and method of forming the same |
CN111933541A (zh) * | 2020-08-10 | 2020-11-13 | 北京北方华创微电子装备有限公司 | 一种半导体设备中晶片的处理方法和系统 |
JP2023044005A (ja) | 2021-09-17 | 2023-03-30 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
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- 2018-09-13 JP JP2018171392A patent/JP7288745B2/ja active Active
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- 2019-07-12 TW TW108124599A patent/TWI786315B/zh active
- 2019-07-16 CN CN201910639962.4A patent/CN110896030A/zh active Pending
- 2019-07-22 US US16/518,481 patent/US11289344B2/en active Active
- 2019-07-26 KR KR1020190090864A patent/KR102240491B1/ko active IP Right Grant
Patent Citations (4)
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JP2008198842A (ja) | 2007-02-14 | 2008-08-28 | Elpida Memory Inc | 非製品ウェハのサイクル運用システム、サイクル運用方法及びコンピュータプログラム |
JP2012109333A (ja) | 2010-11-16 | 2012-06-07 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2013162075A (ja) | 2012-02-08 | 2013-08-19 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2017092102A (ja) | 2015-11-04 | 2017-05-25 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
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Publication number | Publication date |
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TWI786315B (zh) | 2022-12-11 |
JP2020043288A (ja) | 2020-03-19 |
TW202030785A (zh) | 2020-08-16 |
US11289344B2 (en) | 2022-03-29 |
CN110896030A (zh) | 2020-03-20 |
KR20200031025A (ko) | 2020-03-23 |
KR102240491B1 (ko) | 2021-04-14 |
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