JP7091221B2 - 熱処理方法および熱処理装置 - Google Patents
熱処理方法および熱処理装置 Download PDFInfo
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- JP7091221B2 JP7091221B2 JP2018198846A JP2018198846A JP7091221B2 JP 7091221 B2 JP7091221 B2 JP 7091221B2 JP 2018198846 A JP2018198846 A JP 2018198846A JP 2018198846 A JP2018198846 A JP 2018198846A JP 7091221 B2 JP7091221 B2 JP 7091221B2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Automation & Control Theory (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
4 ハロゲンランプハウス
5 フラッシュランプハウス
6 処理チャンバー
7 保持部
10 移載機構
33 タッチパネル
35 磁気ディスク
65 熱処理空間
74 サセプタ
100 熱処理装置
101 インデクサ部
110 ロードポート
110a 第1ロードポート
110b 第2ロードポート
110c 第3ロードポート
120 受渡ロボット
130,140 冷却部
150 搬送ロボット
151a,151b 搬送ハンド
160 熱処理部
210,310 熱処理条件編集エリア
220,320 処理ガス条件編集エリア
330 温度制御条件編集エリア
C キャリア
DC ダミーキャリア
DW ダミーウェハー
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (10)
- 基板に光を照射することによって該基板を加熱する熱処理方法であって、
ダミーウェハーに対する熱処理の手順および処理条件を規定したダミーレシピを作成するダミーレシピ作成工程と、
プロダクトウェハーに対する熱処理を開始する前に、当該熱処理を実行するためのレシピを選択するレシピ選択工程と、
を備え、
前記レシピ選択工程では、前記ダミーレシピの選択を禁止することを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記プロダクトウェハーに対する熱処理の手順および処理条件を規定したプロダクトレシピと前記ダミーレシピとを関連付けて格納する格納工程をさらに備え、
前記レシピ選択工程にて前記プロダクトレシピが選択されたときに、前記プロダクトウェハーに対する熱処理を開始する前に、前記プロダクトレシピに関連付けられた前記ダミーレシピに従って前記ダミーウェハーに対する熱処理を実行することを特徴とする熱処理方法。 - 請求項1または請求項2記載の熱処理方法において、
前記ダミーレシピ作成工程では、フラッシュランプによるフラッシュ加熱の規定を禁止することを特徴とする熱処理方法。 - 請求項1から請求項3のいずれかに記載の熱処理方法において、
前記ダミーレシピ作成工程では、処理ガスとして窒素ガスのみが規定可能であることを特徴とする熱処理方法。 - 請求項1から請求項4のいずれかに記載の熱処理方法において、
前記ダミーレシピ作成工程では、温度制御のための温度計として前記ダミーウェハーの温度を測定するウェハー温度計または前記ダミーウェハーを載置するサセプタの温度を測定するサセプタ温度計を規定可能であることを特徴とする熱処理方法。 - 基板に光を照射することによって該基板を加熱する熱処理装置であって、
基板に熱処理を行う熱処理部と、
ダミーウェハーに対する熱処理の手順および処理条件を規定したダミーレシピを作成するための入力部と、
を備え、
プロダクトウェハーに対する熱処理を開始する前に、当該熱処理を実行するためのレシピを選択する際に、前記ダミーレシピの選択を禁止することを特徴とする熱処理装置。 - 請求項6記載の熱処理装置において、
前記プロダクトウェハーに対する熱処理の手順および処理条件を規定したプロダクトレシピと前記ダミーレシピとを関連付けて記憶する記憶部をさらに備え、
前記プロダクトウェハーに対する熱処理を開始する前に、前記プロダクトレシピが選択されたときに、前記プロダクトレシピに関連付けられた前記ダミーレシピに従って前記ダミーウェハーに対する熱処理を実行することを特徴とする熱処理装置。 - 請求項6または請求項7記載の熱処理装置において、
前記入力部では、前記ダミーレシピを作成するときに、フラッシュランプによるフラッシュ加熱の規定を禁止することを特徴とする熱処理装置。 - 請求項6から請求項8のいずれかに記載の熱処理装置において、
前記入力部では、前記ダミーレシピを作成するときに、処理ガスとして窒素ガスのみが規定可能であることを特徴とする熱処理装置。 - 請求項6から請求項9のいずれかに記載の熱処理装置において、
前記入力部では、前記ダミーレシピを作成するときに、温度制御のための温度計として前記ダミーウェハーの温度を測定するウェハー温度計または前記ダミーウェハーを載置するサセプタの温度を測定するサセプタ温度計を規定可能であることを特徴とする熱処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2018198846A JP7091221B2 (ja) | 2018-10-23 | 2018-10-23 | 熱処理方法および熱処理装置 |
TW108136817A TWI728505B (zh) | 2018-10-23 | 2019-10-14 | 熱處理方法及熱處理裝置 |
CN201910988707.0A CN111092027A (zh) | 2018-10-23 | 2019-10-17 | 热处理方法及热处理装置 |
US16/655,645 US20200126807A1 (en) | 2018-10-23 | 2019-10-17 | Light irradiation type heat treatment method and heat treatment apparatus |
KR1020190130592A KR102280228B1 (ko) | 2018-10-23 | 2019-10-21 | 열처리 방법 및 열처리 장치 |
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JP2018198846A JP7091221B2 (ja) | 2018-10-23 | 2018-10-23 | 熱処理方法および熱処理装置 |
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JP2020068245A JP2020068245A (ja) | 2020-04-30 |
JP7091221B2 true JP7091221B2 (ja) | 2022-06-27 |
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US (1) | US20200126807A1 (ja) |
JP (1) | JP7091221B2 (ja) |
KR (1) | KR102280228B1 (ja) |
CN (1) | CN111092027A (ja) |
TW (1) | TWI728505B (ja) |
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JP2000232108A (ja) | 1999-02-12 | 2000-08-22 | Dainippon Screen Mfg Co Ltd | 基板加熱方法および基板加熱装置 |
JP2009260251A (ja) | 2008-03-18 | 2009-11-05 | Hitachi Kokusai Electric Inc | 基板処理装置及び基板処理システム |
JP2016139667A (ja) | 2015-01-26 | 2016-08-04 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2018148178A (ja) | 2017-03-09 | 2018-09-20 | 株式会社Screenホールディングス | 熱処理方法 |
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