JP2018085369A - 半導体製造装置、基板支持装置の冷却方法 - Google Patents
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Abstract
Description
基板搬送装置Mは、各収納室11、12と基板支持装置13との間で各基板S、Dの搬送を行う装置である。基板搬送装置Mは、各収納室11、12と真空予備室15との間で基板搬送を行う大気ロボット16と、大気と真空との異なる環境間で基板搬送を行う真空予備室15と、真空予備室15と基板支持装置13との間で基板搬送を行う真空ロボット17で構成されている。
この切換えを受けて、先の基板処理での基板処理温度T0と後の基板処理での基板処理温度T1との比較が行われる(S2)。
なお、ここで言う基板処理温度とは、基板処理が行われる際の処理基板Sの設定温度であり、基板支持装置13の設定温度と同等である。
なお、基板処理温度の切換えが終了するまでの間、イオン源1の運転を停止する等してイオンビームIBは処理室8内に入射していないので、ダミー基板Dへのイオンビーム照射は行われない。
一方、基準値D1との比較の結果、基準値よりも温度差が低い場合には、ダミー基板Dは搬送されず、基板支持装置13の自然冷却が行われる(S22)。
ダミー基板Dの搬送開始後、図2に記載の放射温度計21で、ダミー基板Dが基板支持装置13の基板支持面上に支持されていないときに、基板支持装置13の基板支持面の温度を測定して、所望温度近傍の温度であれば、ダミー基板Dの搬送を終了する。
基板支持装置13の温度測定については、図2に描かれる放射温度計21の他に熱電対を用いて基板支持装置13の温度測定をしてもよい。
また、図6に描かれているように、処理室8の真空雰囲気内に第2収納室12を設けておいてもよい。本発明において、ダミー基板Dは基板支持装置13の冷却用に使用される基板であることから、必ずしも大気側から搬送し、大気側に搬出される必要はない。処理室8に第2収納室12を設けておけば、ダミー基板Dの基板支持装置13への搬送にあたり、比較的長い時間を要する真空予備室15での真空排気、大気開放の操作が省略できるので、ダミー基板Dの搬送に要する時間が大幅に短縮できる。この場合、ダミー基板Dの基板搬送装置Mは真空ロボット17のみで構成されることになる。
冷却装置の例としては、真空予備室15に空気や窒素等の冷媒をダミー基板Dに吹き付ける機構を取り付けておくか、第2収納室12に冷却水が流れる冷媒流路を設けておき、これを用いてダミー基板Dを冷却する機構を設ける等の構成が考えられる。
12 第2収納室
13 基板支持装置
M 基板搬送装置
S 処理基板
D ダミー基板
C 制御装置
Claims (7)
- 処理基板が収納される第1収納室と、
ダミー基板が収納される第2収納室と、
基板を支持する加熱機能付きの基板支持装置と、
各収納室と前記基板支持装置との間で各基板の搬送を行う基板搬送装置とを備えた半導体製造装置であって、
先の基板処理での基板処理温度が後の基板処理での基板処理温度よりも高い場合には、後の基板処理が行われる前に前記基板搬送装置を操作して、先の基板処理での基板処理温度よりも低い温度のダミー基板の搬送を行う制御装置を備えた半導体製造装置。 - 処理基板が収納される第1収納室と、
ダミー基板が収納される第2収納室と、
基板を支持する加熱機能付きの基板支持装置と、
各収納室と前記基板支持装置との間で各基板の搬送を行う基板搬送装置とを備えた半導体製造装置であって、
先の基板処理での基板処理温度が後の基板処理での基板処理温度よりも所定温度以上高い場合には、後の基板処理が行われる前に前記基板搬送装置を操作して、先の基板処理での基板処理温度よりも低い温度のダミー基板の搬送を行う制御装置を備えた半導体製造装置。 - 前記ダミー基板を冷却する冷却装置を備えた請求項1または2記載の半導体製造装置。
- 前記基板支持装置の温度を測定する温度測定装置を備えている請求項1または2に記載の半導体製造装置。
- 前記第2収納室には複数枚のダミー基板が収納されており、
前記ダミー基板の搬送は複数回行われる請求項1または2に記載の半導体製造装置。 - 処理基板が収納される第1収納室と、
ダミー基板が収納される第2収納室と、
基板を支持する加熱機能付きの基板支持装置と、
各収納室と前記基板支持装置との間で各基板の搬送を行う基板搬送装置とを備えた半導体製造装置で使用される基板搬送装置の冷却方法で、
先の基板処理での基板処理温度が後の基板処理での基板処理温度よりも高い場合には、後の基板処理が行われる前に先の基板処理での基板処理温度よりも低い温度のダミー基板の搬送を行う基板支持装置の冷却方法。 - 処理基板が収納される第1収納室と、
ダミー基板が収納される第2収納室と、
基板を支持する加熱機能付きの基板支持装置と、
各収納室と前記基板支持装置との間で各基板の搬送を行う基板搬送装置とを備えた半導体製造装置で使用される基板搬送装置の冷却方法で、
先の基板処理での基板処理温度が後の基板処理での基板処理温度よりも所定温度以上高い場合には、後の基板処理が行われる前に先の基板処理での基板処理温度よりも低い温度のダミー基板の搬送を行う基板支持装置の冷却方法。
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US15/667,348 US10109509B2 (en) | 2016-11-21 | 2017-08-02 | Method for cooling semiconductor manufacturing apparatus and substrate support apparatus |
CN201710712078.XA CN108091590A (zh) | 2016-11-21 | 2017-08-18 | 半导体制造装置及基板支承装置的冷却方法 |
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US12020958B2 (en) * | 2020-02-28 | 2024-06-25 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment method |
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JPH0837158A (ja) * | 1994-07-21 | 1996-02-06 | Dainippon Screen Mfg Co Ltd | 基板の熱処理方法及び熱処理装置 |
JP2005150363A (ja) * | 2003-11-14 | 2005-06-09 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
JP2006176842A (ja) * | 2004-12-22 | 2006-07-06 | Mitsubishi Heavy Ind Ltd | ガラス基板の成膜装置 |
JP2010265497A (ja) * | 2009-05-13 | 2010-11-25 | Canon Inc | 蒸着方法及び蒸着装置 |
JP2011084771A (ja) * | 2009-10-15 | 2011-04-28 | Fuji Electric Holdings Co Ltd | 成膜装置及びその動作方法、並びに電気機器 |
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JP2020096093A (ja) * | 2018-12-13 | 2020-06-18 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
WO2020121895A1 (ja) * | 2018-12-13 | 2020-06-18 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
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