JP6241100B2 - Mosfet - Google Patents
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- JP6241100B2 JP6241100B2 JP2013148170A JP2013148170A JP6241100B2 JP 6241100 B2 JP6241100 B2 JP 6241100B2 JP 2013148170 A JP2013148170 A JP 2013148170A JP 2013148170 A JP2013148170 A JP 2013148170A JP 6241100 B2 JP6241100 B2 JP 6241100B2
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- 239000004065 semiconductor Substances 0.000 claims description 279
- 230000001681 protective effect Effects 0.000 claims description 86
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 25
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 239000012777 electrically insulating material Substances 0.000 claims description 17
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 238000010292 electrical insulation Methods 0.000 claims description 10
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 326
- 238000000034 method Methods 0.000 description 38
- 230000008569 process Effects 0.000 description 24
- 238000001039 wet etching Methods 0.000 description 19
- 238000012986 modification Methods 0.000 description 13
- 230000004048 modification Effects 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 239000010936 titanium Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000005275 alloying Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
本発明の一形態は、MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)である。このMOSFETは、
窒化ガリウム(GaN)から主に成るp型半導体層と、
窒化ガリウム(GaN)から主に成り、前記p型半導体層に接合されたn型半導体層と、
電気絶縁性を有し、前記p型半導体層および前記n型半導体層を被覆する保護膜であって、
酸化アルミニウム(Al 2 O 3 )から成る第1の層と、
酸化アルミニウム(Al 2 O 3 )とは異なる電気絶縁材料から成り、前記第1の層に積層された第2の層と、
前記第1の層および前記第2の層を貫通する開口部と
を含み、前記第1の層が、前記p型半導体層および前記n型半導体層に隣接し、前記p型半導体層と前記n型半導体層とが接合されたpn接合面の端部のうち、前記開口部の外側における端部を被覆する、保護膜と、
電気絶縁性を有し、前記保護膜の前記開口部の内側に設けられ、前記p型半導体層および前記n型半導体層と、前記pn接合面の端部のうち前記第1の層に被覆された端部と対になる端部である、前記開口部の内側における端部と、を被覆するゲート絶縁膜と、
前記ゲート絶縁膜に接合されたゲート電極と
を備え、
前記第1の層と前記第2の層とを合わせた前記保護膜の全体の厚みは、400nm以上である。
また、本発明は、以下の形態として実現することも可能である。
A−1.半導体装置の構成
図1は、第1実施形態における半導体装置10の構成を模式的に示す断面図である。図1には、相互に直交するXYZ軸が図示されている。
図2は、半導体装置10の製造方法を示す工程図である。半導体装置10を製造する際には、製造者は、エピタキシャル成長によって基板110の上に半導体層120を形成し、続いて、エピタキシャル成長によって半導体層120の上に半導体層130を形成し、さらに、エピタキシャル成長によって半導体層130の上に半導体層140を形成する(工程P110)。本実施形態では、製造者は、有機金属気相成長法(MOCVD)を実現するMOCVD装置を用いたエピタキシャル成長によって、基板110上に半導体層120、半導体層130および半導体層140を形成する。
図3は、保護膜180の評価結果を示すグラフである。図3の評価試験では、試験者は、半導体装置として第1の試料と第2の試料とを用意し、各試料に対して逆方向電圧を印加した場合の逆方向電流密度を測定した。第1の試料は、上述の半導体装置10である。第2の試料は、二酸化ケイ素(SiO2)から成る絶縁膜を保護膜180に代えて備える点を除き、半導体装置10と同様である。第2の試料における絶縁膜は、単層であり、その厚みは、600nmである。
以上説明した第1実施形態によれば、Al2O3から成る第1の層181によって半導体層120,130,140の界面122,132,141,142およびpn接合面160の端部162におけるリーク電流の低減を図るとともに、SiO2から成る第2の層182によって絶縁破壊強度を補強することにより第1の層181の厚みを抑制することができる。その結果、保護膜180の電気的特性の向上と加工性の向上とを両立できる。
図4は、第1実施形態の第1変形例における半導体装置12の構成を模式的に示す断面図である。図4には、図1と同様にXYZ軸が図示されている。第1実施形態の第1変形例における半導体装置12の構成は、ソース電極192が半導体層140を貫通して半導体層130に至る点を除き、上述の実施形態における半導体装置10と同様である。第1実施形態の第1変形例によれば、上述の実施形態と同様に、保護膜180の電気的特性の向上と加工性の向上とを両立できる。
図5は、第1実施形態の第2変形例における半導体装置14の構成を模式的に示す断面図である。図5には、図1と同様にXYZ軸が図示されている。第1実施形態の第2変形例における半導体装置14の構成は、フィールドプレート電極193を備える点を除き、上述の第1変形例における半導体装置12と同様である。半導体装置14のフィールドプレート電極193は、開口部185の内側におけるソース電極192の上から、保護膜180に沿って広がる電極である。これによって、フィールドプレート電極193は、半導体層120、半導体層130および半導体層140との間に保護膜180を挟むフィールドプレート構造を形成する。第1実施形態の第2変形例によれば、上述の実施形態と同様に、保護膜180の電気的特性の向上と加工性の向上とを両立できる。
図6は、第2実施形態における半導体装置20の構成を模式的に示す断面図である。図6には、図1と同様にXYZ軸が図示されている。
本発明は、上述の実施形態や実施例、変形例に限られるものではなく、その趣旨を逸脱しない範囲において種々の構成で実現することができる。例えば、発明の概要の欄に記載した各形態中の技術的特徴に対応する実施形態、実施例、変形例中の技術的特徴は、上述の課題の一部または全部を解決するために、あるいは、上述の効果の一部または全部を達成するために、適宜、差し替えや、組み合わせを行うことが可能である。また、その技術的特徴が本明細書中に必須なものとして説明されていなければ、適宜、削除することが可能である。
105…トレンチ
110…基板
120…半導体層
122…界面
130…半導体層
132…界面
140…半導体層
141,142…界面
160…pn接合面
162…端部
180…保護膜
181…第1の層
181a,181b…面
182…第2の層
182a,182b…面
185…開口部
192…ソース電極
193…フィールドプレート電極
195…ゲート絶縁膜
196…ゲート電極
198…ドレイン電極
210…半導体層
211…界面
220…半導体層
221…界面
230…半導体層
231…界面
260…pn接合面
262…端部
263…端部
270…pn接合面
272…端部
273…端部
280…保護膜
281…第1の層
282…第2の層
285…開口部
292…ソース電極
295…ゲート絶縁膜
296…ゲート電極
298…ドレイン電極
Claims (5)
- MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)であって、
窒化ガリウム(GaN)から主に成るp型半導体層と、
窒化ガリウム(GaN)から主に成り、前記p型半導体層に接合されたn型半導体層と、
電気絶縁性を有し、前記p型半導体層および前記n型半導体層を被覆する保護膜であって、
酸化アルミニウム(Al2O3)から成る第1の層と、
酸化アルミニウム(Al2O3)とは異なる電気絶縁材料から成り、前記第1の層に積層された第2の層と、
前記第1の層および前記第2の層を貫通する開口部と
を含み、前記第1の層が、前記p型半導体層および前記n型半導体層に隣接し、前記p型半導体層と前記n型半導体層とが接合されたpn接合面の端部のうち、前記開口部の外側における端部を被覆する、保護膜と、
電気絶縁性を有し、前記保護膜の前記開口部の内側に設けられ、前記p型半導体層および前記n型半導体層と、前記pn接合面の端部のうち前記第1の層に被覆された端部と対になる端部である、前記開口部の内側における端部と、を被覆するゲート絶縁膜と、
前記ゲート絶縁膜に接合されたゲート電極と
前記開口部の内側に位置し、前記p型半導体層又は前記n型半導体層に接合されたソース電極と、
前記p型半導体層と前記n型半導体層とを含む半導体層の前記開口部が形成される側の表面とは反対の面である、裏面に接合されたドレイン電極と、
を備え、
前記第1の層と前記第2の層とを合わせた前記保護膜の全体の厚みは、400nm以上である、MOSFET。 - 前記第2の層を形成する電気絶縁材料は、二酸化ケイ素(SiO2)と、窒化ケイ素(SiN)と、酸窒化ケイ素(SiON)と、酸化ハフニウム(HfO2)と、窒化アルミニウム(AlN)と、酸化ジルコニウム(ZrO2)と、酸窒化ジルコニウム(ZrON)との少なくとも1つである、請求項1に記載のMOSFET。
- 前記第1の層の厚みは、500nm以下である、請求項1または請求項2に記載のMOSFET。
- 前記第1の層における前記開口部を画定する面は、前記半導体層側から前記第2の層側にわたって前記開口部の外側へと傾斜する、請求項1から請求項3までのいずれか一項に記載のMOSFET。
- 前記ゲート絶縁膜は、前記保護膜とは異なる組成を有する、請求項1から請求項4までのいずれか一項に記載のMOSFET。
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