JP2018056421A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2018056421A JP2018056421A JP2016192551A JP2016192551A JP2018056421A JP 2018056421 A JP2018056421 A JP 2018056421A JP 2016192551 A JP2016192551 A JP 2016192551A JP 2016192551 A JP2016192551 A JP 2016192551A JP 2018056421 A JP2018056421 A JP 2018056421A
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- film
- semiconductor device
- insulating film
- semiconductor layer
- gate insulating
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 169
- 238000002425 crystallisation Methods 0.000 claims abstract description 39
- 230000008025 crystallization Effects 0.000 claims abstract description 39
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 22
- 150000004767 nitrides Chemical class 0.000 claims abstract description 21
- 239000001257 hydrogen Substances 0.000 claims abstract description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 48
- 238000004519 manufacturing process Methods 0.000 claims description 33
- 238000000231 atomic layer deposition Methods 0.000 claims description 18
- 239000007800 oxidant agent Substances 0.000 claims description 10
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 5
- 238000009751 slip forming Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 1
- 230000008569 process Effects 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 239000000758 substrate Substances 0.000 description 16
- 125000004429 atom Chemical group 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 13
- 238000005259 measurement Methods 0.000 description 13
- 238000012360 testing method Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
A−1.半導体装置の構成
図1は、半導体装置100の構成を模式的に示す断面図である。図1には、相互に直交するX軸、Y軸およびZ軸が図示されている。X軸は、図1の左から右に延びる軸である。Y軸は、図1の紙面の手前から奥に延びる軸である。Z軸は、図1の下から上に延びる軸である。他の図のXYZ軸は、図1のXYZ軸に対応する。なお、本明細書において、Z軸の+方向を便宜的に「上」と呼ぶことがある。この「上」という呼称は、半導体装置100の配置(向き)を限定するものではない。すなわち、半導体装置100は、任意の向きに配置しうる。
図3は、第1実施形態における半導体装置100の製造方法を示す工程図である。まず、製造者は、基板110の上に、n型半導体層120、p型半導体層130、n型半導体層140を順に形成する(工程P100)。本実施形態では、製造者は、有機金属気相成長法(MOCVD)によって、n型半導体層120、p型半導体層130、n型半導体層140を形成する。
第1評価試験では、試験者は、窒化ガリウムから主になるn型半導体基板の上に、窒化ガリウムから主になる半導体エピタキシャル層を結晶成長により形成した後、半導体エピタキシャル層の上に絶縁膜を形成して、試料S1,S2として作製した。
第2評価試験では、試験者は、n型基板の上に絶縁膜を形成し、絶縁膜の上には、窒化チタン(TiN)から主に形成される電極を形成することによって、試料S3,S4,S5として作製した。電極は、以下の工程で形成された。すなわち、n型基板の上に絶縁膜が形成されてからの窒素雰囲気下における500℃での熱処理、スパッタリングによる窒化チタンの堆積、フォトレジストによるパターニング、フォトレジストで覆われていない部分の窒化チタンの除去、フォトレジストの除去が順に行われることによって、絶縁膜の上に電極が形成された。試料S3,S4,S5は、いわゆるMOS構造をとる。
第3評価試験では、試験者は、ゲート絶縁膜160の形成について、第1の膜162を堆積してから連続的に第2の膜164を堆積してゲート絶縁膜160を形成した試料S4(試料S4aとする)と、ゲート絶縁膜160の形成について、第1の膜162を堆積してから中断を挟んで第2の膜164を堆積してゲート絶縁膜160を形成した試料S4(試料S4bとする)と、におけるI−V特性を測定した。
第1実施形態では、ゲート絶縁膜160とゲート電極172は接触しているが、本発明はこれに限られない。例えば、半導体装置は、ゲート絶縁膜160とゲート電極172との間に、酸素プラズマを酸化剤とした二酸化ケイ素を挿入した構造であってもよい。このような構造では、二酸化ケイ素を挿入していない構造と比べて、より一層リーク電流を小さくできる。
110…基板
120…n型半導体層
130…p型半導体層
140…n型半導体層
152…トレンチ
156…リセス
160…ゲート絶縁膜
162…第1の膜
164…第2の膜
168…パッシベーション膜
172…ゲート電極
174…pボディ電極
176…ソース電極
178…ドレイン電極
200…レジストマスク
Claims (6)
- 半導体装置であって、
III族窒化物半導体層と、
前記III族窒化物半導体層の上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜の上に形成されたゲート電極と、を備え、
前記ゲート絶縁膜は、
前記III族窒化物半導体層の上に配されるとともに、ケイ素を含み酸化アルミニウムよりも結晶化温度の高い原料から主に形成され、水素濃度が1×1021原子/cm3以上、窒素濃度が1×1019原子/cm3以上および炭素濃度が1×1019原子/cm3以上である第1の膜と、
前記第1の膜の上に配されるとともに酸化アルミニウムから主に形成される第2の膜と、を有する、半導体装置。 - 請求項1に記載の半導体装置であって、
前記第1の膜の厚さは少なくとも2nm以上である、半導体装置。 - 請求項1または請求項2に記載の半導体装置であって、
前記III族窒化物半導体層は、トレンチを有し、
前記ゲート絶縁膜は、前記トレンチにおける底面および側面を覆うよう形成されているとともに前記底面を覆う前記ゲート絶縁膜の厚さと前記側面を覆う前記ゲート絶縁膜の厚さとは同じであるよう形成されている、半導体装置。 - 請求項1から請求項3までのいずれか一項に記載の半導体装置を製造する製造方法であって、
前記第1の膜は、原子層堆積法によって形成される、半導体装置を製造する製造方法。 - 請求項1から請求項4までのいずれか一項に記載の半導体装置を製造する製造方法であって、
前記第1の膜は、オゾンを酸化剤とした原子層堆積法によって形成される、半導体装置を製造する製造方法。 - 請求項1から請求項5までのいずれか一項に記載の半導体装置を製造する製造方法であって、
前記第2の膜は、前記第1の膜の上に連続的に形成される、半導体装置を製造する製造方法。
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