JPS5819462A - 電縫溶接鋼管 - Google Patents
電縫溶接鋼管Info
- Publication number
- JPS5819462A JPS5819462A JP11668381A JP11668381A JPS5819462A JP S5819462 A JPS5819462 A JP S5819462A JP 11668381 A JP11668381 A JP 11668381A JP 11668381 A JP11668381 A JP 11668381A JP S5819462 A JPS5819462 A JP S5819462A
- Authority
- JP
- Japan
- Prior art keywords
- steel pipe
- welded steel
- pipe
- strain aging
- annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000831 Steel Inorganic materials 0.000 title claims abstract description 47
- 239000010959 steel Substances 0.000 title claims abstract description 47
- 239000012535 impurity Substances 0.000 claims abstract description 3
- 230000032683 aging Effects 0.000 abstract description 19
- 238000000137 annealing Methods 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 6
- 229910052758 niobium Inorganic materials 0.000 abstract description 5
- 229910052720 vanadium Inorganic materials 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000001816 cooling Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018663 Mn O Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000011888 autopsy Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000010512 thermal transition Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
この発明は電縫溶接鋼管の組成に関し、特に溶接後のボ
ストアニールによる熱影響部の歪時効脆化を防止して靭
性を改嵐した電縫溶接鋼管を提供するものである。
ストアニールによる熱影響部の歪時効脆化を防止して靭
性を改嵐した電縫溶接鋼管を提供するものである。
周知のように電縫鋼管の製造工程において社、硬化した
溶接部の組織を改善するため、溶接後に溶接部を局部的
に加熱する新調ポストアニールを施すことが多い、この
ようなボストアニール工程を含む電縫鋼管の製造工程の
代表例を第１図に示す。第１図において、一般に帯状ス
ケルプと称される素材帯鋼ｌを成形ライン２において連
続的に管状体に成形した後、コンタクトチップもしくは
誘導加熱コイルからなる高周波給電体３によシ帯鋼両端
を溶接温度まで加熱し、スクイズロール４によって加圧
溶接し、得られた溶接管（電縫鋼管）５の内外面の溶接
ビードを切削した後、ボストアニーラと称する局部１導
加熱装置６によって溶接部を局部的にオーステナイト化
温度まで加熱し、続いて空冷ゾーン７において溶接部が
４００〜５００℃以下となるまで空冷し、その後水冷ゾ
ーン８において水冷を施した後、ただちにサイプと称す
る定形機９によって所定の外径、真円度に成形し、矯正
機所定の寸法に切断することによって製品となる。
溶接部の組織を改善するため、溶接後に溶接部を局部的
に加熱する新調ポストアニールを施すことが多い、この
ようなボストアニール工程を含む電縫鋼管の製造工程の
代表例を第１図に示す。第１図において、一般に帯状ス
ケルプと称される素材帯鋼ｌを成形ライン２において連
続的に管状体に成形した後、コンタクトチップもしくは
誘導加熱コイルからなる高周波給電体３によシ帯鋼両端
を溶接温度まで加熱し、スクイズロール４によって加圧
溶接し、得られた溶接管（電縫鋼管）５の内外面の溶接
ビードを切削した後、ボストアニーラと称する局部１導
加熱装置６によって溶接部を局部的にオーステナイト化
温度まで加熱し、続いて空冷ゾーン７において溶接部が
４００〜５００℃以下となるまで空冷し、その後水冷ゾ
ーン８において水冷を施した後、ただちにサイプと称す
る定形機９によって所定の外径、真円度に成形し、矯正
機所定の寸法に切断することによって製品となる。
しかるに上述のような製造工程によって得られた電縫鋼
管においては、溶接部から１０〜３９ｓｓ離れた位置に
おける靭性が他の部分よシ低下する現象が生じることが
ある。すなわち本発明者等が通常鋼成分の電縫銅管の管
周方向各部位についてシャルピー衝撃値を調べたところ
、後述する第３図の破線（比較例Ｉ）で示すように、溶
接部周辺の１０〜３０■の部位においてはボストアニー
ル（局部加熱処理）によシ焼鈍され九溶接部や電縫鋼管
母材の他の部分よシも衝撃値が低下していることが確認
された。このように局部的に衝撃特性が低下すれば、特
に寒冷地に使用されるラインパづプ等においてはパイプ
の破壊事故原因となることもあシ、安全性の点から重要
な問題となる。
管においては、溶接部から１０〜３９ｓｓ離れた位置に
おける靭性が他の部分よシ低下する現象が生じることが
ある。すなわち本発明者等が通常鋼成分の電縫銅管の管
周方向各部位についてシャルピー衝撃値を調べたところ
、後述する第３図の破線（比較例Ｉ）で示すように、溶
接部周辺の１０〜３０■の部位においてはボストアニー
ル（局部加熱処理）によシ焼鈍され九溶接部や電縫鋼管
母材の他の部分よシも衝撃値が低下していることが確認
された。このように局部的に衝撃特性が低下すれば、特
に寒冷地に使用されるラインパづプ等においてはパイプ
の破壊事故原因となることもあシ、安全性の点から重要
な問題となる。
ところで上述のような電縫鋼管にあける局部的脆化現象
の原因について本発明者等が種々調査研究を行なったと
ころ、次のような事実が判明した。
の原因について本発明者等が種々調査研究を行なったと
ころ、次のような事実が判明した。
すなわち、繭述の電縫鋼管製造工程において、局部誘導
加熱装置６によってボストアニールを行った後、水冷ゾ
ーン８に至るまでの間の空冷ゾーン７における電縫鋼管
の管周方向の各部位の温度推移を精密に調定し九ところ
、第２図に示すように溶接部周辺１０〜３０■の位置に
おいては水冷シー７８に至るまでの間４００〜２００℃
程度の温１１に比較的長時間保持されることが判明し友
、このことから、剖記部位においてはいわゆる青熱脆化
現象が発生し、歪時効によって靭性の低下を招いている
ものと推定された。すなわち、従来使用されている通常
成分の鋼においては鋼中の窒素軸が充分に固定されてい
ない丸め、成形曲げ加工によって生じ九残留歪に加えて
ボストアニール処理後の空冷時における２００〜４００
℃の長時間保持によシ歪時効現象が生じているものと考
えられる。もちろん前記部位が４００〜２００℃に保持
される時間は造管速度（う１ン速Ｆ＃Ｌ）によって異な
り、シたがって歪時効による硬化の程度（脆化の程度）
は造管速度によりて異なシ、造管速度が速いほど硬化度
が小さくなって脆化が少なくなる。
加熱装置６によってボストアニールを行った後、水冷ゾ
ーン８に至るまでの間の空冷ゾーン７における電縫鋼管
の管周方向の各部位の温度推移を精密に調定し九ところ
、第２図に示すように溶接部周辺１０〜３０■の位置に
おいては水冷シー７８に至るまでの間４００〜２００℃
程度の温１１に比較的長時間保持されることが判明し友
、このことから、剖記部位においてはいわゆる青熱脆化
現象が発生し、歪時効によって靭性の低下を招いている
ものと推定された。すなわち、従来使用されている通常
成分の鋼においては鋼中の窒素軸が充分に固定されてい
ない丸め、成形曲げ加工によって生じ九残留歪に加えて
ボストアニール処理後の空冷時における２００〜４００
℃の長時間保持によシ歪時効現象が生じているものと考
えられる。もちろん前記部位が４００〜２００℃に保持
される時間は造管速度（う１ン速Ｆ＃Ｌ）によって異な
り、シたがって歪時効による硬化の程度（脆化の程度）
は造管速度によりて異なシ、造管速度が速いほど硬化度
が小さくなって脆化が少なくなる。
しかしながら一般に高強度電縫鋼管になるほど成形機２
による成形速度が遅くなシ、またその後のスフ１ズロー
ル４による加圧成形速度が遅くなり、その結果ライン速
度が遅くなって第２図に示すように１００秒程度以上の
長時間にわたって４００〜２００℃の温度に保持され、
歪時効にょる脆化が著しくなるのである。
による成形速度が遅くなシ、またその後のスフ１ズロー
ル４による加圧成形速度が遅くなり、その結果ライン速
度が遅くなって第２図に示すように１００秒程度以上の
長時間にわたって４００〜２００℃の温度に保持され、
歪時効にょる脆化が著しくなるのである。
この発明は以上の事情を背景としてなされたものであシ
、電縫鋼管の溶接部周辺１０〜３ｏ■の部位、すなわち
ボストアニール熱影響部が歪時効によシ脆化することを
防止して、電縫鋼管の局所的靭性低下を防止することを
目的とするものである。すなわち本発明者等は、鋼中に
固溶されているＮが歪時効現象に大きな影響を与えるこ
とに着目して種々実験・研究を重ねた結果、通常鋼に不
６丁避的に含有されるＮを０．００３０ ％以下に抑え
た鋼を素材とすることによってボストアニール熱、影響
部の歪時効脆化を防止し得ることを見出し、この発明を
なすに至ったのである。
、電縫鋼管の溶接部周辺１０〜３ｏ■の部位、すなわち
ボストアニール熱影響部が歪時効によシ脆化することを
防止して、電縫鋼管の局所的靭性低下を防止することを
目的とするものである。すなわち本発明者等は、鋼中に
固溶されているＮが歪時効現象に大きな影響を与えるこ
とに着目して種々実験・研究を重ねた結果、通常鋼に不
６丁避的に含有されるＮを０．００３０ ％以下に抑え
た鋼を素材とすることによってボストアニール熱、影響
部の歪時効脆化を防止し得ることを見出し、この発明を
なすに至ったのである。
具体的にはこの発明の電縫鋼管は、Ｃ０，４Ｓ以下、８
ｉ０．８１以下、Ｍｎ Ｏ，３〜１．８０ Ｓｓ ＡＪ
ｏ、ｏｌ〜ｏ、１ｏ＊、ＩＮｏ、００３０ｓ以下ｔ’含
有するとともに、Ｎｂ Ｏ，０１〜０．１０％、 Ｖｏ
、０１０〜０、１５１のうち１種以上を含有し、残部が
Ｆｅおよび不可避的不純物からなることを特徴とするも
のであシ、このようＫＮを０．００３０−以下に規制す
るとともにＮｂおよび／またはＶを添加することによっ
てボストアニール熱影響部の歪時効脆化を防止し、管周
方向に均一な靭性値を有するようにしたものである。
ｉ０．８１以下、Ｍｎ Ｏ，３〜１．８０ Ｓｓ ＡＪ
ｏ、ｏｌ〜ｏ、１ｏ＊、ＩＮｏ、００３０ｓ以下ｔ’含
有するとともに、Ｎｂ Ｏ，０１〜０．１０％、 Ｖｏ
、０１０〜０、１５１のうち１種以上を含有し、残部が
Ｆｅおよび不可避的不純物からなることを特徴とするも
のであシ、このようＫＮを０．００３０−以下に規制す
るとともにＮｂおよび／またはＶを添加することによっ
てボストアニール熱影響部の歪時効脆化を防止し、管周
方向に均一な靭性値を有するようにしたものである。
以下この発明をさらに詳細に説明する。
先ずこの発明の電縫鋼管の化学成分の限定理由を説明す
ると、Ｃは最も安定して強度を向上させる元素であるが
、０．４０１１を越えれば電縫鋼管製造時に詔いて溶接
割れを起こし易いから、溶接品質を確保するため上限を
０．４０−とし丸、但し特に寒冷地等に使用される場合
には低温靭性をよ〕良好にするため０．０４〜０．１６
−の範囲とすることが望ましい。
ると、Ｃは最も安定して強度を向上させる元素であるが
、０．４０１１を越えれば電縫鋼管製造時に詔いて溶接
割れを起こし易いから、溶接品質を確保するため上限を
０．４０−とし丸、但し特に寒冷地等に使用される場合
には低温靭性をよ〕良好にするため０．０４〜０．１６
−の範囲とすることが望ましい。
ｓｉは鋼中の脱酸元素として有効なものであるが、過剰
に含有されれば電縫溶接時に８１０２成分によるペネト
レータ欠陥が溶接部に発生し易く、そのため０．８０
ｆ４以下に制限しえ。
に含有されれば電縫溶接時に８１０２成分によるペネト
レータ欠陥が溶接部に発生し易く、そのため０．８０
ｆ４以下に制限しえ。
ＭｔはＣと同様に鋼の強度を向上させる元素であシ、靭
性改善にも有効であるが、０．３−未満ではこれらの効
果が充分ではなぐ、一方過剰にＭｎを添加した場合には
ＭｍＯを主体としたペネトレータ欠陥が浴接部に発生し
易いから、上限を１．８０９６とした。
性改善にも有効であるが、０．３−未満ではこれらの効
果が充分ではなぐ、一方過剰にＭｎを添加した場合には
ＭｍＯを主体としたペネトレータ欠陥が浴接部に発生し
易いから、上限を１．８０９６とした。
局祉鋼の脱酸元素として有効であるとともに結晶粒微細
化作用によ如鋼の強度、靭性を向上させるが、０．１（
ｌを越えればがえりて靭性を低下させるばかシでなく、
溶接性をも低下させるから、上限を０．１０慢とした。
化作用によ如鋼の強度、靭性を向上させるが、０．１（
ｌを越えればがえりて靭性を低下させるばかシでなく、
溶接性をも低下させるから、上限を０．１０慢とした。
ＮｔｉＡＪ添加により一部はＭＮとして固定されるが一
部は固溶Ｎとして存在し、歪時効脆化を促進する。そ、
こでこの発明では固溶Ｎによる歪時効脆化の促進を防止
する九めＮ含有量を極力抑制することとした。そして後
述する実施例で示すようにＮ含有量が０．００３０−を
越える場合には歪時効脆化の防止効果が得難くなること
から、Ｎの上限を０．００３０１とした。
部は固溶Ｎとして存在し、歪時効脆化を促進する。そ、
こでこの発明では固溶Ｎによる歪時効脆化の促進を防止
する九めＮ含有量を極力抑制することとした。そして後
述する実施例で示すようにＮ含有量が０．００３０−を
越える場合には歪時効脆化の防止効果が得難くなること
から、Ｎの上限を０．００３０１とした。
Ｎｂ 、 Ｖはともに結晶粒ｔ−ｍ化および炭化物とし
ての析出によって強度および靭性を向上させるに効果が
あ、９、Ｎｂ、Ｖのうち１種以上を添加すれば良い。Ｎ
ｂは０．Ｏｌ−未満で杜上記効果が不充分であり、一方
０．１０ 饅を越えればかえって靭性が低）してしまう
ことから、Ｎｂの添加量は０．Ｏ１〜０．１０優とする
。またＶは０．０１慢未満では上記効果が不充分であシ
、一方０．１５ ％を越えればかえって靭性が低下する
ことからＶの添加量は０．０１〜０．１５チとする。
ての析出によって強度および靭性を向上させるに効果が
あ、９、Ｎｂ、Ｖのうち１種以上を添加すれば良い。Ｎ
ｂは０．Ｏｌ−未満で杜上記効果が不充分であり、一方
０．１０ 饅を越えればかえって靭性が低）してしまう
ことから、Ｎｂの添加量は０．Ｏ１〜０．１０優とする
。またＶは０．０１慢未満では上記効果が不充分であシ
、一方０．１５ ％を越えればかえって靭性が低下する
ことからＶの添加量は０．０１〜０．１５チとする。
なお、１述のようにＮを０．００３０チ（３０ｐｐｍ
）以下に規制するためには、素材製造時において溶鋼を
取鍋から注入する際に、大気と溶鋼との接触による溶鋼
のＮ吸収を防止するべく周囲をＡｒガス等の不活性ガス
雰囲気とすれば良い。
）以下に規制するためには、素材製造時において溶鋼を
取鍋から注入する際に、大気と溶鋼との接触による溶鋼
のＮ吸収を防止するべく周囲をＡｒガス等の不活性ガス
雰囲気とすれば良い。
以）にこの発明の実施例および比較例を記す。
夾り例
第１表の試料Ａ−Ｈに示す本発明組成範囲内の化学成分
を有する素材を用いて、第１図の工程によシ管規格ＡＰ
Ｉ ５ＬＸ−Ｘ６０．管外ｆｉ ５０８１１１１、肉厚
７，１４■の電縫鋼管を製造した。
を有する素材を用いて、第１図の工程によシ管規格ＡＰ
Ｉ ５ＬＸ−Ｘ６０．管外ｆｉ ５０８１１１１、肉厚
７，１４■の電縫鋼管を製造した。
比較例
第１表の試料Ｆ−Ｉに示す本発明組成範囲外の化学成分
を有する素材を用いて、前記同様な電縫鋼管を製造した
。
を有する素材を用いて、前記同様な電縫鋼管を製造した
。
以上の各実施例および比較例の電縫銅管のうち、試料記
号Ｃ（本発明）およびＨ（比較例）の電縫鋼管について
溶接部から管周方向各位置における０℃シャルピー衝撃
値を調べた結果を第３図に示し、また実施例および比較
例のすべての電縫鋼管について溶接部から管周方向へ２
０■の位置におＶ）る０℃シャルピー衝撃値を調べた結
果を各試料のＮ含有量と対応して第４図に示す。第３図
から、従来の電縫鋼管（比較例試料Ｈ）では溶接部から
１０〜３０霞の位置において衝撃値が低下して、局部的
に歪時効による脆化が生じていることが明瞭であり、こ
れに対しこの発明の電縫鋼管（試料Ｃ）においては溶接
部では衝撃値が若干高いものの、その他の部分では管周
方向９０°の位置まで衝撃値がほぼ均一となっておシ、
歪時・効による脆化がほとんど生じていないことが明ら
かである。
号Ｃ（本発明）およびＨ（比較例）の電縫鋼管について
溶接部から管周方向各位置における０℃シャルピー衝撃
値を調べた結果を第３図に示し、また実施例および比較
例のすべての電縫鋼管について溶接部から管周方向へ２
０■の位置におＶ）る０℃シャルピー衝撃値を調べた結
果を各試料のＮ含有量と対応して第４図に示す。第３図
から、従来の電縫鋼管（比較例試料Ｈ）では溶接部から
１０〜３０霞の位置において衝撃値が低下して、局部的
に歪時効による脆化が生じていることが明瞭であり、こ
れに対しこの発明の電縫鋼管（試料Ｃ）においては溶接
部では衝撃値が若干高いものの、その他の部分では管周
方向９０°の位置まで衝撃値がほぼ均一となっておシ、
歪時・効による脆化がほとんど生じていないことが明ら
かである。
また第４図から、鋼中Ｎの含有量を０．００３０ ％以
下に規制することによってボストアニール熱影響部の歪
時効脆化を防止して靭性を著しく改善し得ることが明ら
かである。
下に規制することによってボストアニール熱影響部の歪
時効脆化を防止して靭性を著しく改善し得ることが明ら
かである。
以上の説明で明らかなように仁の発明の電縫鋼管は、ボ
ストアニール処理後の空冷時におけるボストアニール熱
影響部の歪時効脆化による局部的靭性低下を有効に防止
して、管網方向に均一な靭性を得ることができ、したが
って寒冷地に使用されろう１ンパイブ等に使用してもボ
ストアニール熱影響部の歪時効脆化に起因する破壊事故
の発生を有効に防止することができる等の効果が得られ
る。
ストアニール処理後の空冷時におけるボストアニール熱
影響部の歪時効脆化による局部的靭性低下を有効に防止
して、管網方向に均一な靭性を得ることができ、したが
って寒冷地に使用されろう１ンパイブ等に使用してもボ
ストアニール熱影響部の歪時効脆化に起因する破壊事故
の発生を有効に防止することができる等の効果が得られ
る。
第１図は電縫溶接鋼管の一般的な製造工程の一例を示す
ブロック図、第２図は第１図の工程中のボストアニール
処理後の空冷ゾーンにおける溶接鋼管の各部位の温政推
移を示すグラフ、第３図はこの発明の実施例および比較
例の電縫鋼管における溶接部から管周方向各位置の０℃
シャルピー衝撃値の分布を示すグラフ、第４図はこの発
明の実施例および比較例の電縫鋼管における溶接部から
管周方向２０■の位置での０℃シャルピー衝撃値とＮ含
有量との関係を示すグラフである。
ブロック図、第２図は第１図の工程中のボストアニール
処理後の空冷ゾーンにおける溶接鋼管の各部位の温政推
移を示すグラフ、第３図はこの発明の実施例および比較
例の電縫鋼管における溶接部から管周方向各位置の０℃
シャルピー衝撃値の分布を示すグラフ、第４図はこの発
明の実施例および比較例の電縫鋼管における溶接部から
管周方向２０■の位置での０℃シャルピー衝撃値とＮ含
有量との関係を示すグラフである。
Claims (1)
- ｃ Ｏ，４＊ （重量−１以下同じ）以下、８１０．８
％以下、Ｍｍ ０３〜１．８ Ｓ、ＡＪ Ｏ，０１〜０
．１０１１、Ｎ Ｏ，００３０−以下を含有するととも
Ｋ Ｎｂ Ｏ，０１〜０．１（１、Ｖｏ、０１〜０．１
５１１のうち１種以上を含有し、残部が？・および不可
避的不純物からなることを特徴とする電縫溶接鋼管。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11668381A JPS5819462A (ja) | 1981-07-24 | 1981-07-24 | 電縫溶接鋼管 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11668381A JPS5819462A (ja) | 1981-07-24 | 1981-07-24 | 電縫溶接鋼管 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5819462A true JPS5819462A (ja) | 1983-02-04 |
Family
ID=14693283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11668381A Pending JPS5819462A (ja) | 1981-07-24 | 1981-07-24 | 電縫溶接鋼管 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5819462A (ja) |
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| US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
| US10914004B2 (en) | 2018-06-29 | 2021-02-09 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
| US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| US10928731B2 (en) | 2017-09-21 | 2021-02-23 | Asm Ip Holding B.V. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
| US10934619B2 (en) | 2016-11-15 | 2021-03-02 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11001925B2 (en) | 2016-12-19 | 2021-05-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
| US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
| US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
| US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
| US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
| US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
| US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
| US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
| USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
| US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
| US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
| US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
| US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11233133B2 (en) | 2015-10-21 | 2022-01-25 | Asm Ip Holding B.V. | NbMC layers |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
| US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
| US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
| US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
| US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
| US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
| US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
| US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
| US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
| US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
| US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
| US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
| US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
| US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
| US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
| US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
| US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
| US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
| US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
| US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
| US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
| US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
| US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
| US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
| USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
| US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
| US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
| US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
| US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
| US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
| US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
| US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
| US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
| US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
| US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
| US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
| US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
| US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
| US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
| US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
| US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
| US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
| USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
| US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
| US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
| US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
| US11742189B2 (en) | 2015-03-12 | 2023-08-29 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
| US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11828707B2 (en) | 2020-02-04 | 2023-11-28 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
| US11827981B2 (en) | 2020-10-14 | 2023-11-28 | Asm Ip Holding B.V. | Method of depositing material on stepped structure |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11830738B2 (en) | 2020-04-03 | 2023-11-28 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
| US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11873557B2 (en) | 2020-10-22 | 2024-01-16 | Asm Ip Holding B.V. | Method of depositing vanadium metal |
| US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
| US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
| USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
| US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| US11885020B2 (en) | 2020-12-22 | 2024-01-30 | Asm Ip Holding B.V. | Transition metal deposition method |
| US11891696B2 (en) | 2020-11-30 | 2024-02-06 | Asm Ip Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
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-
1981
- 1981-07-24 JP JP11668381A patent/JPS5819462A/ja active Pending
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| US11398382B2 (en) | 2018-03-27 | 2022-07-26 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US10847371B2 (en) | 2018-03-27 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
| US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US10867786B2 (en) | 2018-03-30 | 2020-12-15 | Asm Ip Holding B.V. | Substrate processing method |
| US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
| US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
| US11908733B2 (en) | 2018-05-28 | 2024-02-20 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
| US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
| US11837483B2 (en) | 2018-06-04 | 2023-12-05 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| US11952658B2 (en) | 2018-06-27 | 2024-04-09 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11814715B2 (en) | 2018-06-27 | 2023-11-14 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| US11168395B2 (en) | 2018-06-29 | 2021-11-09 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
| US10914004B2 (en) | 2018-06-29 | 2021-02-09 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
| US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10755923B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
| US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
| US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
| US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
| US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
| US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
| US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
| US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
| US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
| USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
| US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
| US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11866823B2 (en) | 2018-11-02 | 2024-01-09 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
| US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US11244825B2 (en) | 2018-11-16 | 2022-02-08 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US11798999B2 (en) | 2018-11-16 | 2023-10-24 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
| US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
| US11959171B2 (en) | 2019-01-17 | 2024-04-16 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
| US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
| US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
| US11798834B2 (en) | 2019-02-20 | 2023-10-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
| US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
| US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
| US11901175B2 (en) | 2019-03-08 | 2024-02-13 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
| US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
| US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
| US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
| US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
| US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
| US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
| US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
| USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
| US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
| US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
| US11908684B2 (en) | 2019-06-11 | 2024-02-20 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
| US11746414B2 (en) | 2019-07-03 | 2023-09-05 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
| US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
| US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
| US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
| US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
| US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
| US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
| US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11876008B2 (en) | 2019-07-31 | 2024-01-16 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| US11827978B2 (en) | 2019-08-23 | 2023-11-28 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| US11898242B2 (en) | 2019-08-23 | 2024-02-13 | Asm Ip Holding B.V. | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
| US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
| US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
| US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
| US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
| US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
| US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
| US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
| US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
| US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
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| US11837494B2 (en) | 2020-03-11 | 2023-12-05 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
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| US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
| US11961741B2 (en) | 2020-03-12 | 2024-04-16 | Asm Ip Holding B.V. | Method for fabricating layer structure having target topological profile |
| US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
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| US11959168B2 (en) | 2020-04-29 | 2024-04-16 | Asm Ip Holding B.V. | Solid source precursor vessel |
| US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
| US11798830B2 (en) | 2020-05-01 | 2023-10-24 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
| US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
| US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
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