CN100573803C - 用于非常大面积基片的真空处理室 - Google Patents

用于非常大面积基片的真空处理室 Download PDF

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CN100573803C
CN100573803C CNB2005800398802A CN200580039880A CN100573803C CN 100573803 C CN100573803 C CN 100573803C CN B2005800398802 A CNB2005800398802 A CN B2005800398802A CN 200580039880 A CN200580039880 A CN 200580039880A CN 100573803 C CN100573803 C CN 100573803C
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P·埃恩格
L·德劳内伊
S·约斯特
M·埃亚考比
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Abstract

根据本发明的大尺寸基片PECVO处理的等离子体反应器，包括作为外室的真空处理室和带有电极喷头作为RF天线的至少一个内部反应器，所述内部反应器还包括反应器底部和反应器顶部，至少在等离子体反应器内基片处理期间密封式地连接，并至少在基片装载/卸载期间分开。进一步的实施例包括用于反应器顶部/底部的密封和用于RF天线/电极喷头的悬挂件。

Description

用于非常大面积基片的真空处理室
技术领域
本发明涉及用于非常大面积基片的真空处理装置，尤其是带有平面偏差补偿机构的PECVD处理室(相应地为内部反应器)。
背景技术
本发明大体涉及大面积PECVD处理室并特别涉及这种自身再次封闭在第二环绕真空室内的室。此“盒中盒”(Plasma BoxTM)现有技术已知，并在美国专利No.4,798,739中作了介绍。此“盒中盒”的主要优点是可保持在外部气密室内比在内部反应器室内更低的压力，使得控制气流可保持从内室到外室(“差分泵送”)。此“盒中盒”系统的进一步优点是内部室可保持在恒定的处理温度，一般大约250-350℃(等温的反应器)。因此通过恒定地保持在处理温度，此内部反应器允许一致的温度分布并因此允许一致的整体沉积速率。但随着越来越大基片(超过2m×2m)的出现，越来越难以保持内部反应器基本上平坦，并因此难以保持内部反应器能够符合所要求的生产规格以及装载和卸载基片。
由于包含在PECVD中的化学试剂的活性，因此铝合金是经济材料的选择：铝是能够抵抗PECVD过程化学试剂腐蚀的多个已知材料中一种，化学试剂例如含氟气体和物质。但不幸的是，铝合金趋于在升高的温度下出现蠕变，而且甚至耐蠕变合金也不能完全消除此随着时间的变形。
反应器平面的任何变形和偏差还导致在基片上不均匀的沉积，由于沉积速率(在其它因素中)是等离子体间隙-即反应器顶部电极和底部电极之间的距离的函数。此外，为了装载和卸载基片，需要能打开外面的室和内部反应器，并通过装载锁接近它们。任何此开口还必须可以快速且可靠地以气密方式密封，用于实际的沉积处理，以避免泄漏。
现有技术
在现有技术(US4,798,739)已知的“盒中盒”类型的PECVD反应器中，已知作为“加强件”的不锈钢杆用于从外室悬挂内部反应器。内部反应器自身(例如Unaxis KAI 1200系统的反应器)由两个气密的接近对称的半部加工而成，该半部被打开仅用于维修并不用于装载/卸载目的。为装载/卸载目的，在内部反应器的侧壁里加工缝隙，侧壁可通过缝隙阀以气密方式打开和关闭。保持基片的叉穿过此缝隙引入内部室。然后基片通过一套垂直销来容纳。通过叉的收缩，这些(提升)销可垂直收缩直到基片停留在其指定的位置。然后缝隙由现有技术已知的缝隙阀密封。
现有技术的缺点
当前的反应器设计的最大缺点是如上所述的装载和卸载基片的侧面缝隙/叉/销类型。这要求反应器一致的内部高度来容纳叉和销。但由于非常大的基片尺寸，叉趋向于在其自身重量和基片重量的组合作用下弯曲。使用的装载/卸载机械装置规定了更加大的反应器内部高度并规定了大的缝隙高度。
简单的不锈钢加强件，例如现有技术已知的T或H形杆，不能完全补偿非常大的反应器的变形和扭曲，尤其是当这些反应器达到超过两米的边长。简单的加强件不仅不能在室温下提供平坦的反应器，尤其是在运行温度下也不能，甚至不锈钢趋向于在升高的温度下强度变弱。简单的加强件解决方案在室温下以及在约300℃的运行温度下，易于在反应器重量和它们自身重量作用下下垂。
前述的问题，主要由于当使用超过2米边长的大尺寸反应器时，必须面对的不同成形精度问题所引起，需要新的反应器设计。
目前内部反应器在现有技术中设计为单件真空室。反应器的装载和卸载通过穿过在侧壁加工的侧面缝隙而进行。新的反应器设计必须符合最佳高度要求，而处理基片和前述装载问题由于装载叉弯曲而引起。这些要求不再由传统的反应器设计满足。而且，反应器达到越来越大的尺寸，并必须符合越来越多的变形和膨胀问题。
发明内容
本发明用于大尺寸基片PECVD处理的等离子体反应器，包括作为外室的真空处理室19和带有处理气体供给部22的至少一个内部反应器，以及电连接到作为RF天线的电极喷头(electrode showerhead)25的RF供给部24，所述内部反应器还包括反应器底部6和反应器顶部2，其至少在所述等离子体反应器内基片处理期间密封式地连接，并至少在所述基片装载/卸载期间分开。进一步有用的实施例和特征在下面以及在各自的从属权利要求中介绍。
根据本发明的另一方面，提供一种处理上述等离子体反应器内的基片的方法，包括步骤：(a)通过垂直地降低所述反应器底部6来打开所述内部反应器，(b)打开室阀门20给出到所述内部反应器的入口，(c)在销8上提供所述基片7，(d)垂直提升所述反应器底部6直到所述内部反应器关闭，(e)关闭所述室阀门以及(f)处理所述基片。
附图说明
图1显示根据本发明一个实施例和反应器，其处于打开状态(1a)和关闭状态(1b)。
图2显示侧视图中的加强件(2a)和在两个不同截面的纵向的加强件(2b和2c)。
图3显示根据本发明用于密封式关闭反应器的密封板。
图4显示了发明性密封板/密封隔件结合的实现。
图5为密封板端部的详图。
图6显示根据本发明进一步实施例用于RF天线的悬挂件。
图中使用的标注：
1     加强件(例如用不锈钢制成)
2     反应器顶部(例如用铝合金制成)
3     加强件夹
4     补偿隔件
5     螺钉
6     反应器底部
7     基片
8     用于基片支撑的(提升)销
99a   密封板    9b密封隔件
10    板簧
11    (反应器)侧壁
12    RF天线(例如用铝制成)
13    悬挂盖
14    悬挂件顶部(例如用铝制成)
15    摩擦和微粒减少环(例如用陶瓷制成)
16    悬挂件中间(例如用陶瓷制成)
17    悬挂件底部(例如用铝制成)
18    RF隔件
19    真空处理室
20    室阀门
21    悬挂件
22    处理气体供给部
23    泵送格栅
24    RF供给部
25    电极喷头
26    排气
具体实施方式
因此，本发明基于新的反应器概念。反应器分为两个部分：反应器底部6和反应器顶部2(见图1)。反应器顶部2优选地通过加强件1连接到外部真空处理室19(连接未在图1中示出)。反应器底部6(或在单个外部室内多反应器系统的情况下的多个底部)垂直可移动，使得在反应器侧壁11和密封板9之间开有缝隙。当反应器完全打开，缝隙变宽而且提升销8开始伸出。然后装载叉(未在图1中显示)能够将基片放置在用于装载的提升销上，或通过从下面穿过室阀门20提升基片来从提升销8缩回基片。此“倒转的鞋盒”类型的开口具有的主要优点是反应器壁11的高度及因此相应的等离子体间隙可相对较小。如果装载/卸载方案通过在反应器壁里提供缝隙阀(如与本发明相对的及现有技术已知的)来选择，壁11的高度必须大量地增加以提供装载/卸载叉的入口，装载/卸载叉可弯曲和随大的基片振动。因此，经济的放置过程会非常受限。
除了新的反应器概念，可以采取另外的措施来确保等离子体设备的正常工作。本发明的进一步实施例包括补偿反应器变形和膨胀的措施，反应器变形和膨胀还导致双件反应器的密封问题。根据本发明补偿平面偏差的第一步是补偿隔件(图2，标注号4)的使用。
图2a-c显示了加强件1的下垂以及因此反应器顶部4由于重力的下垂如何通过补偿隔件4来补偿。螺钉5将反应器顶部2(例如由铝合金制成)与加强件1连接。加强件夹3与例如加工到加强件1里的槽接合。不同厚度的补偿隔件4设置在加强件(1)和反应器顶部(2)之间，并在等离子体反应器在升高的温度下运行期间，允许补偿加强件1的下垂。加强件1还连接到在它们端部的交叉板上(未示出)。通过使用在端部支撑并连接到外室的反应器顶部加强件1，并仔细选择补偿隔件4的厚度可补偿运行温度时的下垂，其中补偿隔件4在加强件(图2b)的端部较厚，朝中间(图2c)较薄和在中心没有补偿隔件4，如图2a中加强件1的弯曲所示，反应器顶部的下垂在中间比在端部需要更多的补偿。因此在反应器底部(底面)的加强件还显示了朝中心的轻微的向下弯曲，但具有最厚的补偿隔件，该补偿隔件设置在加强件(1)和反应器底部(6)之间在加强件的中心。加强件1里已加工的槽和在加强件夹3里可进一步在反应器顶部和加强件之间容纳热膨胀。
图3显示了补偿平面偏差的进一步的机构：通过使用带板簧10的密封板9a。反应器侧壁11贴着反应器底部6的进一步的平面偏差，不能由加强件补偿隔件补偿，将消极地影响反应器的气密性。密封板9a设计为补偿此偏差，这是由于板9a具有一定程度的弹性，并在反应器的内侧压到反应器底部6。此外，在密封板(图4)中心下的密封隔件9b用作避免密封板压紧在反应器壁11和反应器底部6之间的整个长度上。因此实际的密封在两个位置实现：密封板9a和内侧上的反应器底部之间，以及密封板9a和反应器外侧(顶侧)上的反应器壁11之间。
密封隔件9b提供良好限定的关闭位置，它们使通过板簧10完全压到壁11的密封板9a能自由地收缩或从中心膨胀开。可因此补偿约2.5米的反应器边长、约2mm的最大扭曲。
由于内部反应器和外部容器在运行期间处于真空下，密封仅需要气密它们之间的压力差，压力差一般在10-2到10-3毫巴(mbar)范围内。
在图4中，细箭头显示了密封的热膨胀如何引起。通常，密封板9a固定地连接在中心并可收缩和朝角落处膨胀。
图5显示了密封板9a端部的细节，其在角落处连接另一密封板9a：提供凸缘来补偿热膨胀。
但在另一次优选的实施例中，密封可选地通过弹性O型环实现，弹性O型环在反应器壁11下侧面(底部)上的梯形槽里提供。由于反应器要打开和关闭成千次，由于反应器里的温度较高，且由于等离子体的化学种类非常活性，此O型环的材料高度地受压。用于此O型环的现有材料几乎不能满足此要求。
图6显示反应器的另一部分，此处热膨胀需要补偿：射频(RF)天线12的悬挂。图6中的箭头显示收缩/膨胀的自由度。悬挂件保持天线固定；它们不供给实际的RF能量。RF能量通过天线供给到等离子体，因此等离子体显著地变热并相应地热膨胀。如果悬挂件不是用于等离子体反应器中，膨胀/收缩问题不能轻易通过增加扩张槽解决，如反应器顶部2(接地的)和悬挂件14之间的箭头所示，然后通过在悬挂件适当部分上使用绝缘陶瓷，将反应器顶部与天线电绝缘。但由于反应器在真空下运行，必须避免间隙和大的电势降，以避免寄生等离子体的点燃。由于在这种情况下因为热膨胀/收缩而不能避免反应器顶部2和悬挂件14之间的间隙，通过使悬挂件的顶部部分14与反应器顶部2产生相同的电势而避免电势降，通过利用陶瓷柱体(中间部分，16)来隔绝悬挂件的下部分17(其具有与RF天线12相同的电势)，陶瓷柱体在内侧上具有螺纹以便与顶部14和悬挂件的底部17部分相互连接。另外，顶部14和悬挂件的底部17部分通过小间隙而分开，小间隙太小以致于易受寄生等离子体的影响。此外，带浮动电势的RF隔件18使用在天线之上，以避免反应器顶部2和天线12之间的空间里的寄生等离子体。
在另一个次优选的实施例中，悬挂件中间的陶瓷部分的等同物是陶瓷柱体，其带有在其端部突出的两个螺纹。但陶瓷内的螺丝易于破裂。
本发明的优点
本发明的反应器可用于非常大的基片尺寸(例如用于液晶显示的基片)和用于外部真空室(像等离子体BoxTM)。由于其大尺寸的热膨胀(反应器长度在米范围时其可能在厘米范围)和通常的变形(例如蠕变)，对气密性和对必须连接到外室的元件的悬挂带来严峻的问题。本发明的主要优点是反应器从环境温度直到运行温度(约300℃)保持气密。另一个主要优点是通过使用反应器“倒转的鞋盒”开口原理，可避免反应器壁里大的缝隙(如现有技术已知的)，因此等离子体间隙可保持较小，这对于反应器的生产力是必须的。
因此本发明反应器可有效、经济、方便地制造和维修。

Claims (15)

1、一种用于大尺寸基片处理的等离子体增强化学气相沉积(PECVD)的等离子体反应器，包括作为外室的真空处理室(19)和带有处理气体供给部(22)的至少一个内部反应器；以及电连接到作为RF天线的电极喷头(25)的RF供给部(24)，所述内部反应器还包括反应器底部(6)和反应器顶部(2)，其至少在所述等离子体反应器内在基片处理期间密封式地连接，并至少在所述基片装载/卸载期间分开。
2、根据权利要求1所述的等离子体反应器，其特征在于：所述真空处理室(19)呈现带有室阀门(20)的开口，允许所述基片到所述真空处理室(19)中的装载和卸载。
3、根据权利要求1或2所述的等离子体反应器，其特征在于：所述反应器底部内的销(8)支撑待处理的所述基片(7)。
4、根据权利要求1或2所述的等离子体反应器，其特征在于：所述反应器底部(6)可垂直地移动，以分开和密封反应器顶部(2)和反应器底部(6)。
5、根据权利要求1或2所述的等离子体反应器，其特征在于：密封板(9，9a)与反应器顶部(2)的侧壁(11)相互作用，以密封式被压靠在所述反应器底部(6)上。
6、根据权利要求5所述的等离子体反应器，其特征在于：在所述内部反应器的关闭状态，所述密封板(9a)设计为通过弹簧(10)压到所述反应器底部(6)内侧和所述反应器顶部(2)的侧壁(11)。
7、根据权利要求5所述的等离子体反应器，其特征在于：密封隔件(9b)设置在所述密封板(9a)的中心下方。
8、根据权利要求1所述的等离子体反应器，其特征在于：加强件(1)支撑反应器顶部(2)和/或反应器底部(6)。
9、根据权利要求8所述的等离子体反应器，其特征在于：所述加强件(1)经由补偿隔件(4)连接到反应器顶部(2)和/或反应器底部(6)，补偿隔件(4)的厚度选择为补偿在运行期间的热膨胀。
10、根据权利要求9所述的等离子体反应器，其特征在于：设置在所述加强件(1)和所述反应器顶部(2)之间的所述补偿隔件(4)在端部较厚，且朝所述加强件(1)的中间较薄。
11、根据权利要求9所述的等离子体反应器，其特征在于：设置在所述加强件(1)和所述反应器底部(6)之间的所述补偿隔件(4)在所述加强件(1)的中心最厚。
12、根据权利要求9-11中任一项所述的等离子体反应器，其特征在于：螺钉(5)在加强件夹(3)和补偿隔件(4)的帮助下分别连接加强件(1)与反应器顶部(2)或反应器底部(6)。
13、根据权利要求1或2所述的等离子体反应器，其特征在于：悬挂件(21)连接RF天线(12)和反应器顶部(2)，所述悬挂件包括顶部部分(14)、中间部分(16)和底部部分(17)，所述顶部部分(14)处于与所述反应器顶部(2)相同的电势，所述底部部分(17)处于与所述RF天线(12)和所述中间部分(16)相同的电势，且所述中间部分连接并电绝缘所述顶部部分(14)和底部部分(17)。
14、根据权利要求13所述的等离子体反应器，进一步包括在反应器顶部(2)和RF天线(12)之间的空间内的RF隔件(18)。
15、一种处理根据权利要求1的等离子体反应器内的基片的方法，包括步骤：(a)通过垂直地降低所述反应器底部(6)来打开所述内部反应器，(b)打开室阀门(20)给出到所述内部反应器的入口，(c)在销(8)上提供所述基片(7)，(d)垂直提升所述反应器底部(6)直到所述内部反应器关闭，(e)关闭所述室阀门以及(f)处理所述基片。
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EP1953794B1 (en) 2012-02-01
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US20080050536A1 (en) 2008-02-28
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AU2005309226A1 (en) 2006-06-01
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WO2006056091A1 (en) 2006-06-01
EP1815493B1 (en) 2008-04-02
EP1953794A1 (en) 2008-08-06
DE602005005851T2 (de) 2009-04-09
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KR20070103353A (ko) 2007-10-23
CN101065824A (zh) 2007-10-31

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