JP6719290B2 - 補強構造体、真空チャンバー、およびプラズマ処理装置 - Google Patents
補強構造体、真空チャンバー、およびプラズマ処理装置 Download PDFInfo
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- 230000003014 reinforcing effect Effects 0.000 claims description 73
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- 230000000694 effects Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
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- 239000000919 ceramic Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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Description
図1は本発明の一実施形態に係る補強構造体を備えたプラズマ処理装置を示す断面図、図2は図1のプラズマ処理装置の真空チャンバーの外観を示す斜視図、図3は本発明の一実施形態に係る補強構造体示す平面図である。
2;チャンバー本体
3;蓋体
4,4′,4″;補強構造体
5;処理室
6;アンテナ室
10;基板載置台
15;排気機構
21;誘電体壁
24;シャワー筐体
25;サスペンダ
28;ガス供給機構
30;高周波アンテナ
34;整合器
36;高周波電源
41〜43,81〜85,91,92;梁部材
44,44′,44″;環状部
45,45′,45″;放射状部
46;板状部材
50;制御部
61;クレーン開閉用治具
62;ロープ
63;フック
G;基板
Claims (10)
- 基板に所定の処理を施すための直方体状の真空チャンバーの蓋体を補強するために前記蓋体の上面に設けられた、複数の梁部材の組み合わせからなる補強構造体であって、
前記蓋体の上面は矩形状をなし、
前記蓋体の上面の中央部に、梁部材が矩形の環状をなし中空の枠体に形成されてなる環状部と、
前記環状部から梁部材が複数、放射状に延びるように形成された放射状部とを有し、
前記放射状部は、前記環状部の各辺から直交する方向に延びる梁部材、前記環状部の角部から前記蓋体の上面の角部に延びる梁部材とを有することを特徴とする補強構造体。 - 前記環状部の角部から前記蓋体の上面の角部に延びる梁部材は、前記蓋体の上面の対角線方向に延びるものであることを特徴とする請求項1に記載の補強構造体。
- 基板に所定の処理を施すための直方体状の真空チャンバーの蓋体を補強するために前記蓋体の上面に設けられた、複数の梁部材の組み合わせからなる補強構造体であって、
前記蓋体の上面は矩形状をなし、
前記蓋体の上面の中央部に、梁部材が矩形の環状をなし中空の枠体に形成されてなる環状部と、
前記環状部から梁部材が複数、放射状に延びるように形成された放射状部とを有し、
前記蓋体の矩形状をなす前記上面は、一対の第1の辺と一対の第2の辺からなり、
前記補強構造体は、前記蓋体の前記矩形状の上面の一対の第1の辺に平行に設けられた2本の第1の梁部材と、一対の第2の辺に平行に設けられた2本の第2の梁部材とを有し、前記第1の梁部材および前記第2の梁部材が井桁状に配置され、前記第1の梁部材および前記第2の梁部材の中央部が、前記環状部を構成し、前記第1の梁部材および前記第2の梁部材の前記中央部の両側に位置する端部が、前記放射状部の梁部材の一部を構成し、
前記放射状部は、前記環状部の角部から前記蓋体の上面の角部に延びる梁部材をさらに有することを特徴とする補強構造体。 - 前記環状部の角部から前記蓋体の上面の角部に延びる梁部材は、前記蓋体の上面の対角線方向に延びるものであることを特徴とする請求項3に記載の補強構造体。
- 前記第1の梁部材と前記第2の梁部材とは、前記蓋体の上面を9分割するように設けられていることを特徴とする請求項3または請求項4に記載の補強構造体。
- 前記放射状部を構成する梁部材のうち、隣接するものどうしの間の少なくとも一部に、前記隣接する梁部材を連結するように板状部材が配置されていることを特徴とする請求項1から請求項5いずれか1項に記載の補強構造体。
- 基板に所定の処理を施すための真空チャンバーであって、
処理室を形成し、上部に開口部を有するチャンバー本体と、
前記チャンバー本体の前記開口部を開閉する蓋体と、
前記蓋体の上面に設けられた、複数の梁部材の組み合わせからなる補強構造体とを有し、
前記補強構造体は請求項1から請求項6のいずれかに記載されたものであることを特徴とする真空チャンバー。 - 前記蓋体は、前記蓋体をクレーンにより開閉する際に、クレーンのフックが直接または間接に係合されるクレーン開閉用治具をさらに有することを特徴とする請求項7に記載の真空チャンバー。
- 基板に対してプラズマ処理を行うプラズマ処理装置であって、
真空チャンバーと、
前記真空チャンバー内に形成される処理室を真空排気する排気機構と、
前記処理室に処理のためのガスを供給するガス供給機構と、
前記処理室内にプラズマを生成するプラズマ生成機構と
を有し、
前記真空チャンバーは、
前記処理室を形成し、上部に開口部を有するチャンバー本体と、
前記チャンバー本体の前記開口部を開閉する蓋体と、
前記蓋体の上面に設けられた、複数の梁部材の組み合わせからなる補強構造体とを有し、
前記補強構造体は請求項1から請求項6のいずれかに記載されたものであることを特徴とするプラズマ処理装置。 - 前記蓋体は、前記蓋体をクレーンにより開閉する際に、クレーンのフックが直接または間接に係合されるクレーン開閉用治具をさらに有することを特徴とする請求項9に記載のプラズマ処理装置。
Priority Applications (5)
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JP2016123367A JP6719290B2 (ja) | 2016-06-22 | 2016-06-22 | 補強構造体、真空チャンバー、およびプラズマ処理装置 |
TW106119111A TWI720204B (zh) | 2016-06-22 | 2017-06-08 | 補強構造體、真空腔室及電漿處理裝置 |
CN201710430613.2A CN107527783B (zh) | 2016-06-22 | 2017-06-09 | 加强构造体、真空腔室和等离子体处理装置 |
KR1020170077838A KR101918850B1 (ko) | 2016-06-22 | 2017-06-20 | 보강 구조체, 진공 챔버 및 플라스마 처리 장치 |
US15/630,612 US20170372910A1 (en) | 2016-06-22 | 2017-06-22 | Reinforcing structure, vacuum chamber and plasma processing apparatus |
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JP6719290B2 true JP6719290B2 (ja) | 2020-07-08 |
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US (1) | US20170372910A1 (ja) |
JP (1) | JP6719290B2 (ja) |
KR (1) | KR101918850B1 (ja) |
CN (1) | CN107527783B (ja) |
TW (1) | TWI720204B (ja) |
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DE102018130859A1 (de) * | 2018-12-04 | 2020-06-04 | Aixtron Se | CVD-Reaktor mit einem von einer Schirmplatten-Anordnung abgedeckten Gaseinlassorgan |
JP7169885B2 (ja) * | 2019-01-10 | 2022-11-11 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
KR102439228B1 (ko) * | 2022-05-02 | 2022-09-02 | (주)에스제이오토메이션 | 리드의 개폐장치 |
WO2023214725A1 (ko) * | 2022-05-02 | 2023-11-09 | (주)에스제이오토메이션 | 리드의 개폐장치 |
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US20050183824A1 (en) * | 2004-02-25 | 2005-08-25 | Advanced Display Process Engineering Co., Ltd. | Apparatus for manufacturing flat-panel display |
US8058156B2 (en) * | 2004-07-20 | 2011-11-15 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having multiple ion shower grids |
CN101351871B (zh) * | 2005-11-02 | 2010-08-18 | 松下电器产业株式会社 | 等离子体处理装置 |
US7998307B2 (en) * | 2006-09-12 | 2011-08-16 | Tokyo Electron Limited | Electron beam enhanced surface wave plasma source |
CN101896634B (zh) * | 2007-12-14 | 2012-08-29 | 株式会社爱发科 | 腔以及成膜装置 |
JP5285403B2 (ja) * | 2008-04-15 | 2013-09-11 | 東京エレクトロン株式会社 | 真空容器およびプラズマ処理装置 |
KR101921222B1 (ko) * | 2011-06-30 | 2018-11-23 | 삼성디스플레이 주식회사 | 플라즈마를 이용한 기판 처리장치 및 이를 이용한 유기 발광 표시장치의 제조 방법 |
JP5646414B2 (ja) * | 2011-08-24 | 2014-12-24 | 株式会社神戸製鋼所 | 圧力容器 |
JP6228400B2 (ja) * | 2013-07-16 | 2017-11-08 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
US9449805B2 (en) * | 2014-09-23 | 2016-09-20 | Agilent Technologies Inc. | Isolation of charged particle optics from vacuum chamber deformations |
CN104451581B (zh) * | 2014-12-29 | 2017-02-22 | 中国科学院长春光学精密机械与物理研究所 | 磁控溅射镀膜真空箱体 |
JP6600990B2 (ja) * | 2015-01-27 | 2019-11-06 | 東京エレクトロン株式会社 | プラズマ処理装置 |
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TWI720204B (zh) | 2021-03-01 |
KR101918850B1 (ko) | 2018-11-14 |
CN107527783B (zh) | 2019-06-28 |
US20170372910A1 (en) | 2017-12-28 |
KR20180000313A (ko) | 2018-01-02 |
JP2017228633A (ja) | 2017-12-28 |
TW201810420A (zh) | 2018-03-16 |
CN107527783A (zh) | 2017-12-29 |
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