JP5138253B2 - アニール装置 - Google Patents
アニール装置 Download PDFInfo
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- JP5138253B2 JP5138253B2 JP2007081609A JP2007081609A JP5138253B2 JP 5138253 B2 JP5138253 B2 JP 5138253B2 JP 2007081609 A JP2007081609 A JP 2007081609A JP 2007081609 A JP2007081609 A JP 2007081609A JP 5138253 B2 JP5138253 B2 JP 5138253B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
図1は本発明の一実施形態に係るアニール装置の概略構成を示す断面図、図2は図1のアニール装置の加熱源を拡大して示す断面図、図3は図1のアニール装置のLEDへ給電する部分を拡大して示す断面図である。このアニール装置100は、気密に構成され、ウエハWが搬入される処理室1を有している。
まず、ゲートバルブ13を開にして搬入出口12からウエハWを搬入し、支持部材7上に載置する。その後、ゲートバルブ13を閉じて処理室1内を密閉状態とし、排気口11を介して図示しない排気装置により処理室1内を排気するとともに、図示しない処理ガス供給機構から処理ガス配管9および処理ガス導入口8を介して所定の処理ガス、例えばアルゴンガスまたは窒素ガスを処理室1内に導入し、処理室1内の圧力を例えば100〜10000Paの範囲内の所定の圧力に維持する。
図8の例では、冷却部材4a,4bと光透過部材18a,18bとの間の空間は樹脂を封入する代わりにArガス46を封入するようにしている。この場合には、フィードスルーを通して、わずかな大気が流入することも考えられるので、LEDアレイ34に防湿コーティングを施すことが好ましい。
上述したようにLEDを高パワーで発光させる際には、その冷却は非常に需要であり、そのためLEDを冷却面に半田付け等で強力に接着する必要がある。一方、LEDを用いてウエハの急速加熱を行う装置の場合には、LEDの修理交換が非常に重要であり、図11の構成よりもさらなる交換容易性が望まれる。
まず、AlN製の板材から六角状の支持体32を切り出し、給電電極やねじの挿入孔であるスルーホール32aを形成する(図14(a))。次に、支持体32と同じ形状を有し、スルーホール32aに対応する位置にスルーホール81aを形成した銅製の熱拡散部材81の表面を半田ペーストを用いた半田付けにより支持体32の裏面に貼り付ける(図14(b))。そして、スルーホール32a,81aに支持体32および熱拡散部材81を貫通するように給電電極83を挿入し、これを支持体32に半田付けする(図14(c))。
1a;アニール処理部
1b;ガス拡散部
2;チャンバー
4a,4b;冷却部材
8;処理ガス導入口
9;処理ガス配管
10;排気口
11;排気配管
12;搬入出口
16a,16b;凹部
17a,17b;加熱源
18a,18b;光透過部材
20;透明な樹脂
21a,21b;冷却媒体流路
22a,22b;冷却媒体供給配管
23a,23b;冷却媒体排出配管
32;支持体
33;LED(発光素子)
34,34′;LEDアレイ
35;電極
36;ワイヤ
37a,37b;制御ボックス
38;電極棒
39;受け部材
41,41′;給電部材
41a;ポゴピン(スプリングピン)
42;制御ボード
60;プロセスコントローラ
61;ユーザーインターフェース
62;記憶部
71;液体
72;熱伝導層
73;ねじ
74;外枠
81;熱拡散部材
82;樹脂層
83;給電電極
84;ねじ
85;接合部
86;取り付け部
87;枠部材
88;空間
93;通路
94;排気管
95;バッファ部材
96;排気装置
100;アニール装置
W…半導体ウエハ(被処理体)
Claims (22)
- 被処理体が収容される処理室と、
被処理体の少なくとも一方の面に面するように設けられ、被処理体に対して光を照射する複数の発光素子を有する加熱源と、
前記加熱源に対応して設けられ、前記発光素子からの光を透過する光透過部材と、
前記光透過部材の前記処理室と反対側を支持し、前記加熱源に直接接触するように設けられた高熱伝導性材料からなる冷却部材と、
前記冷却部材を冷却媒体で冷却する冷却機構と、
前記処理室内を排気する排気機構と、
前記処理室内に処理ガスを供給する処理ガス供給機構と
を具備し、
前記加熱源は、裏面側の全面が前記冷却部材と接触するように設けられた高熱伝導性絶縁材料からなる支持体と、前記支持体に全面が接触するように設けられた複数の電極と、前記各電極に全面が接触するように設けられた複数の発光素子とを有する発光素子アレイを複数備えていることを特徴とするアニール装置。 - 前記冷却部材は銅製であり、前記支持体はAlN製であることを特徴とする請求項1に記載のアニール装置。
- 前記冷却部材と前記光透過部材との間に空間を有し、前記空間に前記加熱源が設けられていることを特徴とする請求項1または請求項2に記載のアニール装置。
- 前記空間には透明樹脂が充填されることを特徴とする請求項3に記載のアニール装置。
- 前記透明樹脂は、前記冷却部材側の発光素子を含む部分に相対的に硬い樹脂を設け、前記光透過部材側に相対的に柔らかい樹脂を設けてなることを特徴とする請求項4に記載のアニール装置。
- 前記空間には不活性ガスが充填されることを特徴とする請求項3に記載のアニール装置。
- 前記空間を真空引きする真空引き機構と、前記空間に不活性ガスを供給する不活性ガス供給機構とをさらに有することを特徴とする請求項6に記載のアニール装置。
- 前記冷却部材と前記光透過部材との間に空間を有し、前記空間に前記加熱源が設けられ、前記空間には、前記発光素子と前記光透過部材との間の屈折率を有する液体が充填されており、前記支持体は前記冷却部材に熱伝導層を介してねじ止めされていることを特徴とする請求項1または請求項2に記載のアニール装置。
- 前記支持体は、その外枠が前記冷却部材に接するように設けられ、その内側が反射面となっているとともに、液体通流孔が設けられていることを特徴とする請求項8に記載のアニール装置。
- 被処理体が収容される処理室と、
被処理体の少なくとも一方の面に面するように設けられ、被処理体に対して光を照射する複数の発光素子を有する加熱源と、
前記加熱源に対応して設けられ、前記発光素子からの光を透過する光透過部材と、
前記光透過部材の前記処理室と反対側を支持し、前記加熱源に直接接触するように設けられた高熱伝導性材料からなる冷却部材と、
前記冷却部材を冷却媒体で冷却する冷却機構と、
前記処理室内を排気する排気機構と、
前記処理室内に処理ガスを供給する処理ガス供給機構と
を具備し、
前記加熱源は、表面に前記複数の発光素子を支持する高熱伝導性絶縁材料からなる支持体と、前記支持体の裏面側に接合された高熱伝導性材料からなる熱拡散部材と、前記支持体に支持された複数の発光素子を覆うように設けられた透明樹脂からなる樹脂層と、前記熱拡散部材および前記支持体を貫通して設けられた、前記発光素子に給電するための給電電極と、がユニット化されて構成された発光素子アレイを複数備え、前記発光素子アレイは、高熱伝導性ペーストを介して前記冷却部材にねじ止めされていることを特徴とするアニール装置。 - 前記熱拡散部材は、前記支持体の裏面側に半田付けまたはろう接合されていることを特徴とする請求項10に記載のアニール装置。
- 前記冷却部材および前記熱拡散部材は銅製であり、前記支持体はAlN製であることを特徴とする請求項10または請求項11に記載のアニール装置。
- 前記発光素子アレイの前記樹脂層と、前記光透過部材との間に空間を有し、その空間を真空引きする真空引き機構を備えることを特徴とする請求項10から請求項12のいずれか1項に記載のアニール装置。
- 前記真空引き機構は、前記空間に繋がる排気路と、前記排気路に設けられたバッファ空間と、前記排気路および前記バッファ空間を介して前記空間を真空引きするポンプとを有することを特徴とする請求項13に記載のアニール装置。
- 前記冷却部材は、前記各発光素子アレイを取り付ける複数の取り付け部を有し、前記取り付け部は、前記発光素子アレイを囲繞するとともに前記冷却部材に接するように設けられたスペーサ機能を有する枠部材を有することを特徴とする請求項13または請求項14に記載のアニール装置。
- 前記冷却部材を介して前記給電電極に接続され、電源から給電電極に給電する給電部材をさらに有することを特徴とする請求項10から請求項15のいずれか1項に記載のアニール装置。
- 被処理体が収容される処理室と、
被処理体の少なくとも一方の面に面するように設けられ、被処理体に対して光を照射する複数の発光素子を有する加熱源と、
前記加熱源に対応して設けられ、前記発光素子からの光を透過する光透過部材と、
前記加熱源を支持する加熱源支持部材と、
前記加熱源支持部材の裏面側から前記加熱源支持部材を通って前記発光素子に給電する給電機構と、
前記処理室内を排気する排気機構と、
前記処理室内に処理ガスを供給する処理ガス供給機構と
を具備し、
前記加熱源は、前記加熱源支持部材に設けられた支持体と、前記支持体上に形成された複数の電極と、前記各電極上に形成された複数の発光素子と、前記発光素子に給電する給電電極とを有する発光素子アレイを複数備え、
前記給電機構は、前記発光素子アレイの給電電極に接続され前記加熱源支持部材の中を延びる複数の電極棒と、各電極棒に給電する複数の給電部材とを有することを特徴とするアニール装置。 - 前記電極棒と前記給電部材との間はスプリングピンでコンタクトされることを特徴とする請求項17に記載のアニール装置。
- 前記発光素子アレイに設けられた複数の発光素子は、複数の給電領域に分割されて配置され、前記給電電極は各給電領域に対応して複数設けられ、複数の給電電極は、直線状に配列されていることを特徴とする請求項17または請求項18に記載のアニール装置。
- 前記給電電極は、複数の負極と共通の正極とを有することを特徴とする請求項19に記載のアニール装置。
- 前記給電領域における複数の発光素子は、シリアルに接続されたシリアル接続組が複数パラレルに設けられていることを特徴とする請求項19または請求項20に記載のアニール装置。
- 前記発光素子は、発光ダイオードであることを特徴とする請求項1から請求項21のいずれか1項に記載のアニール装置。
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US12/440,034 US8246900B2 (en) | 2006-09-05 | 2007-08-31 | Annealing apparatus |
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JP2008227435A (ja) | 2008-09-25 |
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CN101405842A (zh) | 2009-04-08 |
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TW200830354A (en) | 2008-07-16 |
US20100038833A1 (en) | 2010-02-18 |
CN101405842B (zh) | 2010-09-01 |
TWI389170B (zh) | 2013-03-11 |
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