WO2009041466A1 - アニール装置 - Google Patents

アニール装置 Download PDF

Info

Publication number
WO2009041466A1
WO2009041466A1 PCT/JP2008/067244 JP2008067244W WO2009041466A1 WO 2009041466 A1 WO2009041466 A1 WO 2009041466A1 JP 2008067244 W JP2008067244 W JP 2008067244W WO 2009041466 A1 WO2009041466 A1 WO 2009041466A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
light emitting
light
annealing apparatus
face
Prior art date
Application number
PCT/JP2008/067244
Other languages
English (en)
French (fr)
Inventor
Shigeru Kasai
Tomohiro Suzuki
Sumi Tanaka
Masatake Yoneda
Hiroyuki Miyashita
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008009503A external-priority patent/JP2009099925A/ja
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to CN200880102499A priority Critical patent/CN101828251A/zh
Priority to KR1020117016768A priority patent/KR101168827B1/ko
Priority to US12/680,221 priority patent/US8440939B2/en
Publication of WO2009041466A1 publication Critical patent/WO2009041466A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

　ウエハＷが収容される処理室１と、ウエハＷの面に面するように設けられ、ウエハＷに対して光を照射する複数のＬＥＤ（３３）を有する加熱源（１７ａ，１７ｂ）と、加熱源（１７ａ，１７ｂ）に対応して設けられ、発光素子（３３）からの光を透過する光透過部材（１８ａ，１８ｂ）とを有するアニール装置において、加熱源（１７ａ，１７ｂ）は、支持体（３２）上にウエハＷ側に向けて複数の発光素子（３３）が取り付けられて構成され、発光素子がそれぞれ個別的に透明樹脂からなるレンズ層（２０）で覆われている。
PCT/JP2008/067244 2007-09-27 2008-09-25 アニール装置 WO2009041466A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880102499A CN101828251A (zh) 2007-09-27 2008-09-25 退火装置
KR1020117016768A KR101168827B1 (ko) 2007-09-27 2008-09-25 Ｌｅｄ 어레이
US12/680,221 US8440939B2 (en) 2007-09-27 2008-09-25 Annealing device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007251533 2007-09-27
JP2007-251533 2007-09-27
JP2008-009503 2008-01-18
JP2008009503A JP2009099925A (ja) 2007-09-27 2008-01-18 アニール装置

Publications (1)

Publication Number Publication Date
WO2009041466A1 true WO2009041466A1 (ja) 2009-04-02

Family

ID=40511349

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067244 WO2009041466A1 (ja) 2007-09-27 2008-09-25 アニール装置

Country Status (1)

Country Link
WO (1) WO2009041466A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012014516A1 (ja) * 2010-07-30 2012-02-02 Ｎｋワークス株式会社 Ｌｅｄ発光装置
JP2012049164A (ja) * 2010-08-24 2012-03-08 Disco Abrasive Syst Ltd 発光デバイスの製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226693A (ja) * 1992-02-17 1993-09-03 Nec Kansai Ltd 赤外発光ダイオード
JP2002049326A (ja) * 2000-08-02 2002-02-15 Fuji Photo Film Co Ltd 平面光源およびそれを用いた表示素子
JP2004506321A (ja) * 2000-08-04 2004-02-26 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 放射源およびレンズモールドの製造方法
JP2005175417A (ja) * 2003-07-28 2005-06-30 Ricoh Co Ltd 発光素子アレイ、光書込ユニットおよび画像形成装置
JP2005259847A (ja) * 2004-03-10 2005-09-22 Nitto Denko Corp 光半導体装置の製造方法
JP2007116072A (ja) * 2005-09-21 2007-05-10 Tokyo Electron Ltd 熱処理装置及び記憶媒体
JP2008016545A (ja) * 2006-07-04 2008-01-24 Tokyo Electron Ltd アニール装置およびアニール方法
JP2008227435A (ja) * 2006-09-05 2008-09-25 Tokyo Electron Ltd アニール装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226693A (ja) * 1992-02-17 1993-09-03 Nec Kansai Ltd 赤外発光ダイオード
JP2002049326A (ja) * 2000-08-02 2002-02-15 Fuji Photo Film Co Ltd 平面光源およびそれを用いた表示素子
JP2004506321A (ja) * 2000-08-04 2004-02-26 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 放射源およびレンズモールドの製造方法
JP2005175417A (ja) * 2003-07-28 2005-06-30 Ricoh Co Ltd 発光素子アレイ、光書込ユニットおよび画像形成装置
JP2005259847A (ja) * 2004-03-10 2005-09-22 Nitto Denko Corp 光半導体装置の製造方法
JP2007116072A (ja) * 2005-09-21 2007-05-10 Tokyo Electron Ltd 熱処理装置及び記憶媒体
JP2008016545A (ja) * 2006-07-04 2008-01-24 Tokyo Electron Ltd アニール装置およびアニール方法
JP2008227435A (ja) * 2006-09-05 2008-09-25 Tokyo Electron Ltd アニール装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012014516A1 (ja) * 2010-07-30 2012-02-02 Ｎｋワークス株式会社 Ｌｅｄ発光装置
JPWO2012014516A1 (ja) * 2010-07-30 2013-09-12 Ｎｋワークス株式会社 Ｌｅｄ発光装置
JP2012049164A (ja) * 2010-08-24 2012-03-08 Disco Abrasive Syst Ltd 発光デバイスの製造方法

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