KR20020064028A - 펄스형 자외선조사에 의한 세정 및 표면처리 장치 - Google Patents
펄스형 자외선조사에 의한 세정 및 표면처리 장치 Download PDFInfo
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- KR20020064028A KR20020064028A KR1020010004624A KR20010004624A KR20020064028A KR 20020064028 A KR20020064028 A KR 20020064028A KR 1020010004624 A KR1020010004624 A KR 1020010004624A KR 20010004624 A KR20010004624 A KR 20010004624A KR 20020064028 A KR20020064028 A KR 20020064028A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
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Abstract
본 발명은 일반 반도체용 기판인 실리콘 웨이퍼의 클리닝, 표면처리공정 및 유기발광소자(OLED : Organic Light Emitting Device)나 액정 디스플레이(LCD : Liquid Crystal Display)와 같은 디스플레이 소자용 기판의 전 처리 단계인 표면 세정을 포함하는 표면개질 공정, 고분자 필름(예: 연료전지용 전해막인 nafion)의 성능을 향상시키기 위한 전처리, 혹은 후처리와 같은 소자제조공정 중 자외선을 이용하는 장치에 관한 것으로, 더욱 상세하게는 실리콘 웨이퍼 표면에 흡착되어 반도체 소자의 성능을 저해하는 유기물질의 펄스형 자외선-오존 산화 클리닝이나 실리콘 웨이퍼를 액상에서 세정한 후 대기 중에 노출되면 자연적으로 생성되는 자연 산화막의 제거를 위한 펄스형 자외선-수소 플라즈마 세정이나 반도체 공정 중 미세패턴을 형성하기 위해 코팅되었던 포토 레지스트(photo resist)의 효과적인 제거를 위한 펄스형 자외선-오존-원거리 고밀도 플라즈마 공정, 또는 상부에 증착될 박막 물질과의 접착력을 향상시키는 표면개질, 유기발광소자용 기판인 투명하면서도 전도성이 있는 무기물질(예: ITO 즉, indium tin oxide)기판을 증착 될 유기물질과의 일함수(work function) 차이의 변화를 주기 위한 표면개질, 연료전지용 전해막인 nafion의 이온 함유량의 조절을 위한 개질과 같은 고분자 필름 물질의 전처리, 후처리 등의 일련의 소자제조공정 중의 저온 자외선 클리닝 및 표면개질 공정을 수행하는 장치를 포함한다.
본 발명의 펄스형 자외선을 이용한 장치는 펄스형 자외선과 오존의 조합에의한 클리닝 및 표면 개질을 위한 장치로 본 장치는 열이 발생하지 않아 플라스틱 류의 기판에 적용이 가능하며 조사시간이 짧고 특별한 형태로 고안된 램프로 인하여 다양한 모양과 크기로 제작이 가능하다. 또한 별도의 원거리 고밀도 플라즈마(remote high-density plasma)에 의한 반응성 라디칼 공급장치, 코일형의 라디오 주파수 플라즈마 (radio frequency plasma)장치 및 직류인가 바이어스 장치들을 조합하여 구성함으로써 표면 세정 및 표면 개질 효과를 향상시킬 수 있는 장치들에 관한 발명이다.
Description
본 발명은 일반 반도체용 기판인 실리콘 웨이퍼의 클리닝, 표면처리공정 및 유기발광소자(OLED : Organic Light Emitting Device)나 액정 디스플레이(LCD : Liquid Crystal Display)와 같은 디스플레이 소자용 기판의 전 처리 단계인 표면 세정을 포함하는 표면개질 공정, 고분자 필름(예: 연료전지용 전해막인 nafion)의 성능을 향상시키기 위한 전처리, 혹은 후처리와 같은 소자제조공정 중 자외선을 이용하는 저온 자외선 조사공정에 관한 것으로, 더욱 상세하게는 실리콘 웨이퍼 표면에 흡착되어 반도체 소자의 성능을 저해하는 유기물질을 제거하기 위한 자외선-오존 산화법에 사용되는 펄스형 자외선 조사공정이나 실리콘 웨이퍼를 액상에서 세정한 후 대기 중에 노출되면 자연적으로 생성되는 자연 산화막의 제거를 위한 자외선-수소 플라즈마 세정에 사용되는 펄스형 자외선 조사공정, 반도체 공정 중 미세패턴을 형성하기 위해 코팅되었던 포토 레지스트(photo resist)의 효과적인 제거를 위한 자외선-오존애싱(ashing)공정에 사용되는 펼스형 자외선 조사공정, 유기발광물질을 투명하면서도 전도성이 있는 무기물질(예: ITO 즉, indium tin oxide)이 코팅된 투명한 유리기판과 몇 가지 다른 종류의 유기물질과 금속물질을 증착 한 후 제품화하기 위한 봉합공정에 사용되는 자외선 경화수지의 펄스형 자외선 조사공정, 또는 특별한 형태로 제조된 액정 디스플레이의 액정 패널과 구동 모듈과의 접합 공정, 또는 액정 패널(pannel)의 색상화질을 좌우하는 기초소재인 칼라 필터(colorfilter)용 안료분산 레지스트(resist)의 경화공정 및 디지털 비디오 디스크(DVD)의 접합공정 등의 일련의 소자제조공정 중의 펄스형 저온 자외선 조사공정을 포함한다.
본 발명의 열이 발생하지 않으며 조사시간이 짧고 다양한 모양과 크기로 제작이 가능한 자외선 램프를 사용하는 공정은 열로 인한 소자의 손상과 변형을 막아주기 때문에 열에 민감한 소재처리에 적합하며 공정시간이 감소되어 짧은 시간에 많은 양을 처리할 수 있는 장점이 있다.
일반적으로 기판들을 클리닝하는 방법은 유기용매들을 사용하여 왔으나 최근들어 다양한 방법의 건식공정들이 제시되며 기판부터 완제품까지 진공상태하에서 조업이 가능하게 되었다. 그 중 많이 쓰이는 방법이 자외선-오존 산화법으로 이는 오존을 자외선에 의해 활성화시켜 매우 강한 산화력을 가지게 하여 기판의 오염물질들을 제거하는 기술이다. 하지만 이러한 방법은 자외선의 조사과정 중에 많은 열이 발생하여 플라스틱 류의 유연성 기판에는 적용하기 어려운 문제점들이 있으며 매우 강하게 화학적 흡착을 가진 물질의 제거는 어렵다는 단점이 있었다.
일반적으로 반도체 웨이퍼에 미세패턴을 형성하기 위해서 사용되는 포토 레지스트를 제거하기 위해서는 산소 플라즈마를 이용하여 제거하였으나 공정 중에 발생하는 플라즈마의 이온 대미지(ion damage)에 의해 게이트 산화막(gate oxide)의 내압이 감소하여 박막이 박리되는 현상이 발생하거나 이온들에 의한 충전현상(charging effect)등이 발생하는 문제가 발생하였다. 이를 개선하기 위해 자외선-오존 산화법에 의해 포토 레지스트를 제거하려는 노력이 있었으나 이 방법은 공정 중에 발생하는 라디칼(radical)의 양이 플라즈마를 이용하는 방법에 비해 상대적으로 작기 때문에 생산성이 떨어지는 단점이 있었다.
일반적으로 디스플레이용 기판(예 : ITO)이나 고분자 필름의 표면을 개질하는 방법으로는 고주파 전력 공급기에 의해 발생한 플라즈마에 의한 방법들이 제시되어 왔다. 하지만 이러한 방법은 개질공정 중에 플라즈마에 의한 기판 혹은 기판 위의 증착물질들의 손상이 일어나는 문제들이 야기되며 이러한 플라즈마의 손상을 줄이는 근본적인 해결책으로 자외선-오존(혹은 다른 기체) 법에 의한 표면개질 방법들이 제시되었다. 하지만 이러한 방법은 개질의 매체들(오존, 다른 기체)이 플라즈마에 비해 상대적으로 반응성이 약해 공정 시간이 오래 걸리며 자외선조사 중에 발생하는 높은 열에 의해 열적으로 불안정하다는 단점들이 있다.
본 발명은 전술한 바와 같은 기존의 자외선-오존 산화장치의 문제점을 해결하는 것으로 일반 자외선 대신 고에너지를 가지는 펄스형 자외선과 원거리 고밀도 플라즈마원, 라디오 주파수 플라즈마원을 동시에 사용하며 기판하부에 직류 바이어스가 인가되는 방식을 채택함으로서 (1) 열이 거의 발생되지 않아 온도에 민감한 소재 처리를 할수 있다는 점에서 열적으로 우수하며, (2) 고 강도의 자외선에 의해서 반응이 더욱 촉진됨으로 인한 강한 반응성과, (3) 공정시간이 절약되며, (4) 원거리 고밀도 플라즈마와 펄스형 자외선의 조합으로 클리닝 또는 표면개질의 고효율을 꾀하며, (5) 기판하부의 직류 바이어스에 의해 플라즈마에 의해 발생하는 이온에 의한 이온 대미지(damage)를 줄여주거나, 이온 충격에 의한 탈착하기 어려운 물질을 표면으로부터 쉽게 탈착시킬 수 있으며, (6) 일반 라디오 주파수나 마이크로 웨이브에 의한 플라즈마 방법을 결합시킨 공정도 가능함으로 인하여 보다 복합적이고 다양한 효과를 유발함으로서 다양한 표면처리 공정이 가능하며, 공정시간이 짧아 대량생산 작업이 가능한 장치를 제작하는 것을 목적으로 한다.
도1은 펄스형 자외선-오존 클리닝 장치의 개략도
도2는 본 발명에 사용되는 자외선 조사장치의 개략도
도3은 고에너지를 가지는 펄스형태의 자외선 특성을 나타내는 그림.
도4는 본 발명의 장치내부에 장착되는 자외선 램프에 관한 그림.
도5는 본 발명의 장치내부에 장착되는 샤워헤드에 관한 그림
<도면의 주요부분에 대한 부호설명>
103 : 자외선 램프 104 : 반사판 105 : 샤워헤드
107 : 오존발생장치 109 : 원거리 고밀도 플라즈마 발생장치
111 : 라디오 주파수 플라즈마 코일 114 : 직류 바이어스
201 : 전력 공급기 203 : 전류 저장 커패시터
204 : 펄스 발생기 207 : Flash tube
302 : 펄스형 저온 자외선 조사방식에 의한 자외선의 파형 및 에너지
303 : 일반 자외선 조사방식에 의한 자외선의 파형 및 에너지
401 : 사각나선형 램프 402 : 나선형 램프
503 : 노즐 502, 504, 505 : 샤워헤드 구성부
이하 첨부된 도면들을 참조하여 본 발명의 내용을 상세히 설명하면 다음과 같다. 도 1에 펄스형태의 자외선을 이용한 원거리 고밀도 플라즈마와 일반 라디오 주파수 플라즈마, 인가된 바이어스가 조합을 이룬 자외선-오존 표면처리 장치에 대해 나타내었다. 본 장치는 다양한 방법으로 기판을 클리닝하거나 표면을 개질할 수 있는데 그 방법과 원리를 표 1에 나타내었다.
본 장치는 주 챔버(main chamber ; 101)에 자외선 공급을 위하여 펄스발생기(204)에서 발생한 펄스 파형의 고전력 에너지가 피드 쓰루우(feed through ; 102)를 통해 공급되어 자외선 램프(103)에서 펄스 형태로 방출된다.
방출된 자외선을 기판 방향 쪽으로 고르게 조사하기 위해 반사가 잘 되도록 특별히 경면 가공하여 반사막이 코팅된 반사판(104)을 설치한다. 자외선-오존 산화법에 의해 기판(112)을 클리닝하거나 표면개질을 하기 위한 오존발생기(107)에서 발생된 오존은 밸브(106)를 열면 기체 공급라인(118)을 통해 챔버(101)내로 주입된다. 주입된 오존은 자외선의 빛 에너지를 흡수하여 에너지 준위가 높은 상태로 여기되어 활성화분자가 됨으로써 강한 산화력을 가지며 기판을 클리닝하거나 표면을 개질시키게 된다.
클리닝 및 표면개질을 위한 반응물질은 원거리 고밀도 플라즈마 발생 셀(109)에서 발생하여 밸브(106)를 열면 챔버 내부로 유입된다. 즉 원거리 고밀도 플라즈마 발생 셀은 마이크로웨이브(microwave ; 초고주파)나 라디오 주파수 (radio frequency ; 고주파)를 사용하고 자장등을 인가함으로써 플라즈마의 밀도 및 에너지 레벨의 극대화를 통하여 최대농도의 반응성 라디칼을 공급하기 위함이다. 예를 들면 반응기 내부에 유입된 웨이퍼는 액체세정 공정을 거친 후라도 대기중에 노출되면 자연 산화막(native oxide)이 형성되어 순수한 박막 증착에 방해가 될 수 있으며 이를 제거하기 위하여 원거리 고밀도 플라즈마를 이용해 수소 원자를 발생하여 자연산화막을 제거 할 수 있다. 플라즈마의 발생 없이 수소 분자를 사용하는 경우 고온공정이 필요하며 이에 따른 부작용 및 생산성 감소 등의 문제가 발생하기 때문에, 보다 활성화된 반응성 수소원자 라디칼을 제공함으로써 공정시간의 단축은 물론 저온공정이 가능해 지며 공정향상에 기여할 수 있다. 활성화된 오존이나 플라즈마 내의 라디칼들이 골고루 기판에 분사되게 하기 위해 제작한 샤워헤드(shower head ; 104)는 단파장의 자외선의 투과효율이 높은 석영이나 사파이어로 구성하며, 또한 활성화된 오존 및 라디칼이 공급되는 동안 주변의 벽과 같은 표면과 충돌하여 재결합(recombination) 되는 확률을 감소시킴으로써 보다 많은 반응성 라디칼들을 공급할 수 있도록 기판과 샤워헤드 노즐사이를 최대한 근접시키며 총 공급경로를 짧게 하고 챔버 전체의 부피도가능한 작게하여 제작한다. 본 장 치는 고밀도 플라즈마에 의해 생성된 이온들의 운동성을 증가시켜 주거나, 역으로 이온 밀도를 감소시키는 역할을 하는 포지티브(Positive ; +) 및네가티브(Negative ; - )의 직류 바이어스를 걸어줄 수 있는 장치(114)를 기판 홀더(113)안에 장착한다. 바이어스를 걸어주는 이유에 대한 간단한 설명을 하면 반도체 웨이퍼에 미세패턴을 형성하기 위해서 사용되는 포토 레지스트를 제거하기 위해서는 산소 플라즈마를 이용하여 제거하였으나 공정 중에 발생하는 플라즈마의 이온 대미지(ion damage)에 의해 게이트 산화막(gate oxide)의 내압이 감소하여 박막이 박리되는 현상이 발생하거나 이온들에 의한 충전현상(charging effect)등이 발생하는 문제가 발생하였다. 이를 개선하기 위해 자외선-오존 산화법에 의해 포토 레지스트를 제거하려는 노력이 있었으나 이 방법은 공정 중에 발생하는 라디칼(radical)의 양이 플라즈마를 이용하는 방법에 비해 상대적으로 작기 때문에 생산성이 떨어지는 단점이 있었다. 이를 개선하기 위해 본 장치에서는 펄스형 자외선-오존 산화법 및 원거리 고밀도 플라즈마의 조합으로 인하여 공정 중에 발생하는 라디칼의 양을 극대화하면서 기판에 포지티브 바이어스를 인가함으로 인하여 앞서 지적하였던 이온 대미지 및 충전 효과를 최소화하여 생산성의 향상에 기여 할 수 있다. 또한 본 장치에는 석영으로 제작된 봉(110)에 플라즈마코일(111)을 감아 일반적인 라디오주파수 플라즈마 처리도 수행이 가능하도록 제작한다.
열에 매우 민감한 기판(예:플라스틱 류)을 사용하는 경우에 대비해 기판 홀더 안에 냉각수(116, 117)가 흐르도록 하거나 표면개질을 위하여 승온이 필요한 경우에 대비해 가열장치(119)를 기판홀더 내부에 장착한다. 챔버의 플라즈마 발생을 원활하게 하고 작은 입자들에 의한 오염방지를 위하여 챔버에 연결된 진공라인에 진공펌프(108)를 인가하고 작동함으로써 공정수행 압력인 mtorr - torr 영역에서 조업할 수 있도록 배기한다.
도 2에 고 에너지의 펄스형태로 자외선을 조사하는 장치에 대한 개략도를 나타내었다. 본 장치는 DC 전력 공급기(201)에 의해 전원이 공급되며 charging resistance(202)를 거친 일정한 에너지의 전원은 커패시터(203)에 의해 전류의 형태로 저장이 되며 높은 에너지로 축적이 되게 된다. 이렇게 축적된 고에너지의 전류는 펄스 발생기(204)에 의해 펄스로 파형이 전환이 되는데 이 펄스 발생기와 자외선 램프의 종류에 따라서 펄스의 모양과 파형, 파장들이 결정되며 이 펄스 발생기와 트리거(trigger : 205)에 의해 투입되는 펄스형태의 고에너지는 (206)의 경로를 거치게 된다. 전달된 펄스형태의 고에너지는 튜브형 자외선 램프(flash tube ; 207)에 의해 자외선(208) 형태로 기판(209)에 조사되는 공정을 가진다.
도 3에는 고 에너지를 가지는 펄스 형태의 자외선의 특성에 대해 나타내었다. 도 3에서 x 축은 시간(306)이며 y 축은 watt의 단위를 가지는 peak power(301)이다. 일반적으로 쓰이는 자외선 조사방법은 일정한 에너지(303)을 가지는 자외선이 계속 조사되는 방법을 취하고 있으나 본 발명에서는 펄스 형태로 고에너지를 가지는 자외선(302)이 조사된다. 일반적인 자외선의 에너지는 약 수 W에서 수 백 W 정도(303)의 에너지를 가지게 되나 펄스 형태의 자외선은 매우 높은 1×106W에서 1×107W 정도의 에너지(302)를 가지게 된다. 이러한 펄스 자외선은 매우 짧은 시간(τp ; 304)만 조사되며 상대적으로 긴 시간(τoff ; 305) 만큼은 냉각을 위해 된다. 즉 듀티 사이클(duty cycle ; 펄스가 켜져 있는 시간 / 펄스가 반복되는 총시간 × 100(%) ; 310)은 1% 미만의 매우 적은 값을 가지므로 전체적으로조사시간(304)이 짧고 냉각시간(305)이 긴 관계로 자외선 조사과정 중에 열이 발생하지 않게 되는 것이다. 자외선 경화 수지를 경화하는데 쓰이는 Joule의 단위를 가지는 에너지는 peak power(301)과 시간(307)의 곱의 형태로 주어지게 되며 그림에서 보면 (308)과 (309)로 표현된 네모난 부분이 된다. 실례를 들어 설명하면, ITO 표면에너지를 증가하는데 50 Kjoule의 에너지가 필요하다면 500W의 자외선 램프로는 100초간 조사를 해야 한다.
<식1> 500 watts × 100 sec = 50 Kjoules(watt-second)
반면에 펄스 방식의 자외선이 5×105 W 정도의 에너지를 가진다면 50 Kjoule의 에너지를 소모하기 위해서는 0.1초의 시간이 필요하다.
<식2> 500,000 watts × 0.1 sec = 50 Kjoules(watt-second)
결국 펄스 형태의 저온 자외선 조사공정은 일반 조사공정에 비해 상대적으로1/1000에 해당되는 시간만을 요구하게 되며 1초에 10번씩의 펄스형 조사가 이루어진다고 해도 약 10배 이상의 생산성을 올릴 수 있게 된다. 그리고 일반적인 조사 방법은 계속해서 열의 축적이 진행이 되지만 펄스 방식의 자외선 조사는 긴 냉각시간으로 인하여 열의 축적이 없어 소자를 열적으로 안정화시킨다. 또한 자외선 조사에 의한 표면처리 공정의 평균반응시간(τr)이 자외선의 세기(Iℓ)와 파장(λ) 및 처리하고자 하는 물질의 농도(Ca, Cb, …) 와 처리기체의 농도 (C1, C2, …)의 함수의 형태라고 보면 다음과 같은 식이 성립한다.
<식3> τr = τr (Iℓ, λ, Ca, Cb, …, C1, C2, …)
또한 평균 반응시간(τr), 펄스 조사시간(τp), 에너지 축적시간(τc), 냉각시간(τoff)의 상호 관계는 식 4에서처럼 나타낼 수 있으며 펄스형 자외선 조사공정 중 조업자가 조절하는 변수는 자외선의 세기(Iℓ), 파장(λ), 처리기체의 농도 (C1, C2, …)라고 하면 Iℓ,λ, C1, C2,…의 값 등을 조절함으로써 식 4의 조건에 적합한 평균처리시간을 가지는 최적의 처리조건을 도출할 수 있다.
<식4> τr < τp < τc < τoff
도 4.에는 본 장치의 내부에 장착되는 자외선 램프에 대해 나타내었다. 자외선 램프는 그 재질이 자외선의 투과효율(transmission efficiency)이 좋은 재질(석영, 사파이어 등)로 제작이 되며 다양한 모양으로 성형이 가능하다. 대상기판에 자외선이 골고루 조사되게 하기 위해 기판의 모양과 유사한 형태로 램프를 가공한다. 대상기판의 모양이 사각인 경우(예 : 디스플레이용 ITO 기판)는 사각나선형(401)의 형태로 램프를 가공하며 원형인 경우(예 : 반도체웨이퍼)는 나선형(402)으로 램프를 가공한다. 가공된 램프의 측면도를 (403)에 나타내었다.
도 5.에는 본 장치에 오존이나 원거리 고밀도 플라즈마가 기판에 골고루 분사 될 수 있게 하는 샤워헤드에 대해 나타내었다. 샤워헤드는 자외선 램프가 본 샤워헤드 안에 위치하기 때문에 재질(502)을 자외선 대부분이 통과할 수 있는 석영이나 사파이어로 제작하여 설치한다. 활성화를 띈 오존 및 원거리 고밀도 플라즈마의 라디칼들의 수명은 짧기 때문에 기판에 가까운 곳에 위치한다. 클리닝 및 표면개질에 사용될 오존 및 원거리 고밀도 플라즈마는 주입구(501)를 통해 챔버 내부로 주입되며 노즐(503)을 통과하며 골고루 퍼지게 된다. 또한 좀더 고른 오존이나 원거리 고밀도 플라즈마의 분포를 위하여 샤워헤드 내부는 이중 채구조(504, 505)로 구성된다.
<표1> 본 장치에 의해 수행되는 클리닝 및 표면개질 방법과 각각의 용도
방 법 | 원 리 | 용 도 |
? 펄스형 자외선 -오존 산화법-원거리 고밀도 플라즈마(O2 ;선택사항) | 자외선에 의해 활성화를 띈 오존의 강한 산화력 | ? 기판 (예 : 반도체웨이 퍼) 표면의 유기물질 제거? 고분자 표면의 산화반응성 촉진.? 유기발광소자 기판용ITO의 표면에너지를 증가 (일함수 조절) |
펄스형 자외선- 원거리 고밀도 플라즈마(H2) | 고밀도 플라즈마에 의해 발생한 라디칼들이 자외선에 의해 여기되어 더욱 강한 반응성 가짐. | ? 표면개질,? 표면세정(자연산화막 제거) |
펄스형 자외선-(오존)- 원거리 고밀도 플라즈마(라디오주파수 플라즈마) - 바이어스 | ① 고밀도 플라즈마에 의해 발생한 이온들이 기판하부의 바이어스에 의해 이끌려 강한 운동성 가짐.( - 바이어스 인가시)② 고밀도 플라즈마에 의해 발생된 이온들이 기판하부의 바이어스에 의해 표면으로부터 반발되어 밀쳐지게 됨으로써 기판표면에서 이온의 밀도가 떨어짐( + 바이어스 인가시). | ① 기판 표면에 강하게흡착된 물질을 제거.(화학반응+물리적 탈착)② 강한 에너지의 이온에 의하여 손상되기 쉬운 기판을 처리하는데 유 효함. (Gate Oxide의 Photoresist 제거시내압감소, 이온 대미지,Charging 효과 개선) |
본 발명에 제시된 장치는 기존의 자외선-오존 산화장치의 문제점을 해결하는 것으로 일반 자외선 대신 고에너지를 가지는 펄스형 자외선과 원거리 고밀도 플라즈마원, 라디오 주파수 플라즈마원을 동시에 사용하며 기판하부에 직류 바이어스가 인가되는 방식을 채택함으로서 (1) 열이 거의 발생되지 않아 온도에 민감한 소재 처리를 할수 있다는 점에서 열적으로 우수하며, (2) 고 강도의 자외선에 의해서 반응이 더욱 촉진됨으로 인한 강한 반응성과, (3) 공정시간이 절약되며, (4) 원거리 고밀도 플라즈마와 펄스형 자외선의 조합으로 클리닝 또는 표면개질의 고효율을 꾀하며, (5) 기판하부의 직류 바이어스에 의해 플라즈마에 의해 발생하는 이온에 의한 이온 대미지(damage)를 줄여주거나, 이온 충격에 의한 탈착하기 어려운 물질을 표면으로부터 쉽게 탈착시킬 수 있으며, (6) 일반 라디오 주파수나 마이크로 웨이브에 의한 플라즈마 방법을 결합시킨 공정도 가능함으로 인하여 보다 복합적이고 다양한 효과를 유발함으로서 다양한 표면처리 공정이 가능하며, 공정시간이 짧아 대량생산 작업이 가능한 장치이다.
Claims (2)
- 펄스형 자외선과 오존발생기에서 생성된 오존, 원거리 고밀도 플라즈마원, 일반 라디오 주파수 플라즈마원 및 직류로 인가된 바이어스를 이용한 복합적인 기판의 클리닝 및 표면개질 장치
- 기판의 모양에 따라 자외선 램프의 모양을 성형한 후 이 램프를 자외선-오존 세정 혹은 자외선-플라즈마 세정에 사용하는 방법.
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US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
KR102319613B1 (ko) * | 2020-09-04 | 2021-10-29 | 서울대학교산학협력단 | 2차원 물질을 이용한 페로브스카이트 유연 투명 태양전지 |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
WO2021247249A1 (en) * | 2020-06-02 | 2021-12-09 | Lam Research Corporation | Photoelectron assisted plasma ignition |
US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11233133B2 (en) | 2015-10-21 | 2022-01-25 | Asm Ip Holding B.V. | NbMC layers |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
WO2023019050A1 (en) * | 2021-08-09 | 2023-02-16 | Applied Materials, Inc. | Ultraviolet and ozone clean system |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US11610774B2 (en) | 2019-10-02 | 2023-03-21 | Asm Ip Holding B.V. | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process |
US11615970B2 (en) | 2019-07-17 | 2023-03-28 | Asm Ip Holding B.V. | Radical assist ignition plasma system and method |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
US11626308B2 (en) | 2020-05-13 | 2023-04-11 | Asm Ip Holding B.V. | Laser alignment fixture for a reactor system |
US11626316B2 (en) | 2019-11-20 | 2023-04-11 | Asm Ip Holding B.V. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
US11637011B2 (en) | 2019-10-16 | 2023-04-25 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
US11639548B2 (en) | 2019-08-21 | 2023-05-02 | Asm Ip Holding B.V. | Film-forming material mixed-gas forming device and film forming device |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US11644758B2 (en) | 2020-07-17 | 2023-05-09 | Asm Ip Holding B.V. | Structures and methods for use in photolithography |
US11646184B2 (en) | 2019-11-29 | 2023-05-09 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
US11646204B2 (en) | 2020-06-24 | 2023-05-09 | Asm Ip Holding B.V. | Method for forming a layer provided with silicon |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
US11658035B2 (en) | 2020-06-30 | 2023-05-23 | Asm Ip Holding B.V. | Substrate processing method |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11664267B2 (en) | 2019-07-10 | 2023-05-30 | Asm Ip Holding B.V. | Substrate support assembly and substrate processing device including the same |
US11664245B2 (en) | 2019-07-16 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing device |
US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11674220B2 (en) | 2020-07-20 | 2023-06-13 | Asm Ip Holding B.V. | Method for depositing molybdenum layers using an underlayer |
US11680839B2 (en) | 2019-08-05 | 2023-06-20 | Asm Ip Holding B.V. | Liquid level sensor for a chemical source vessel |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11688603B2 (en) | 2019-07-17 | 2023-06-27 | Asm Ip Holding B.V. | Methods of forming silicon germanium structures |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
US11705333B2 (en) | 2020-05-21 | 2023-07-18 | Asm Ip Holding B.V. | Structures including multiple carbon layers and methods of forming and using same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
US11725277B2 (en) | 2011-07-20 | 2023-08-15 | Asm Ip Holding B.V. | Pressure transmitter for a semiconductor processing environment |
US11735422B2 (en) | 2019-10-10 | 2023-08-22 | Asm Ip Holding B.V. | Method of forming a photoresist underlayer and structure including same |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11767589B2 (en) | 2020-05-29 | 2023-09-26 | Asm Ip Holding B.V. | Substrate processing device |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US11804364B2 (en) | 2020-05-19 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
US11823876B2 (en) | 2019-09-05 | 2023-11-21 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
US11823866B2 (en) | 2020-04-02 | 2023-11-21 | Asm Ip Holding B.V. | Thin film forming method |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11827981B2 (en) | 2020-10-14 | 2023-11-28 | Asm Ip Holding B.V. | Method of depositing material on stepped structure |
US11830738B2 (en) | 2020-04-03 | 2023-11-28 | Asm Ip Holding B.V. | Method for forming barrier layer and method for manufacturing semiconductor device |
US11828707B2 (en) | 2020-02-04 | 2023-11-28 | Asm Ip Holding B.V. | Method and apparatus for transmittance measurements of large articles |
US11840761B2 (en) | 2019-12-04 | 2023-12-12 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11873557B2 (en) | 2020-10-22 | 2024-01-16 | Asm Ip Holding B.V. | Method of depositing vanadium metal |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US11885020B2 (en) | 2020-12-22 | 2024-01-30 | Asm Ip Holding B.V. | Transition metal deposition method |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
US11887857B2 (en) | 2020-04-24 | 2024-01-30 | Asm Ip Holding B.V. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
US11891696B2 (en) | 2020-11-30 | 2024-02-06 | Asm Ip Holding B.V. | Injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
US11901179B2 (en) | 2020-10-28 | 2024-02-13 | Asm Ip Holding B.V. | Method and device for depositing silicon onto substrates |
US11915929B2 (en) | 2019-11-26 | 2024-02-27 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
US11923181B2 (en) | 2019-11-29 | 2024-03-05 | Asm Ip Holding B.V. | Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing |
US11929251B2 (en) | 2019-12-02 | 2024-03-12 | Asm Ip Holding B.V. | Substrate processing apparatus having electrostatic chuck and substrate processing method |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62160727A (ja) * | 1986-01-10 | 1987-07-16 | Hitachi Ltd | 光化学気相有機物除去方法 |
JPS63224233A (ja) * | 1987-03-13 | 1988-09-19 | Science & Tech Agency | 表面処理方法 |
KR970052663A (ko) * | 1995-12-23 | 1997-07-29 | 김주용 | 반도체소자의 감광막 제거방법 |
US5709754A (en) * | 1995-12-29 | 1998-01-20 | Micron Technology, Inc. | Method and apparatus for removing photoresist using UV and ozone/oxygen mixture |
US5821175A (en) * | 1988-07-08 | 1998-10-13 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface |
-
2001
- 2001-01-31 KR KR1020010004624A patent/KR20020064028A/ko not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62160727A (ja) * | 1986-01-10 | 1987-07-16 | Hitachi Ltd | 光化学気相有機物除去方法 |
JPS63224233A (ja) * | 1987-03-13 | 1988-09-19 | Science & Tech Agency | 表面処理方法 |
US5821175A (en) * | 1988-07-08 | 1998-10-13 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface |
KR970052663A (ko) * | 1995-12-23 | 1997-07-29 | 김주용 | 반도체소자의 감광막 제거방법 |
US5709754A (en) * | 1995-12-29 | 1998-01-20 | Micron Technology, Inc. | Method and apparatus for removing photoresist using UV and ozone/oxygen mixture |
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US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10312055B2 (en) | 2017-07-26 | 2019-06-04 | Asm Ip Holding B.V. | Method of depositing film by PEALD using negative bias |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US11417545B2 (en) | 2017-08-08 | 2022-08-16 | Asm Ip Holding B.V. | Radiation shield |
US11587821B2 (en) | 2017-08-08 | 2023-02-21 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10672636B2 (en) | 2017-08-09 | 2020-06-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US10249524B2 (en) | 2017-08-09 | 2019-04-02 | Asm Ip Holding B.V. | Cassette holder assembly for a substrate cassette and holding member for use in such assembly |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11581220B2 (en) | 2017-08-30 | 2023-02-14 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11993843B2 (en) | 2017-08-31 | 2024-05-28 | Asm Ip Holding B.V. | Substrate processing apparatus |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
US10928731B2 (en) | 2017-09-21 | 2021-02-23 | Asm Ip Holding B.V. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US11387120B2 (en) | 2017-09-28 | 2022-07-12 | Asm Ip Holding B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US11094546B2 (en) | 2017-10-05 | 2021-08-17 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US12033861B2 (en) | 2017-10-05 | 2024-07-09 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10734223B2 (en) | 2017-10-10 | 2020-08-04 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US12040184B2 (en) | 2017-10-30 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US10734244B2 (en) | 2017-11-16 | 2020-08-04 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by the same |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
US11682572B2 (en) | 2017-11-27 | 2023-06-20 | Asm Ip Holdings B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
US10290508B1 (en) | 2017-12-05 | 2019-05-14 | Asm Ip Holding B.V. | Method for forming vertical spacers for spacer-defined patterning |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11501973B2 (en) | 2018-01-16 | 2022-11-15 | Asm Ip Holding B.V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US11972944B2 (en) | 2018-01-19 | 2024-04-30 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US12119228B2 (en) | 2018-01-19 | 2024-10-15 | Asm Ip Holding B.V. | Deposition method |
US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US10535516B2 (en) | 2018-02-01 | 2020-01-14 | Asm Ip Holdings B.V. | Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
USD913980S1 (en) | 2018-02-01 | 2021-03-23 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11735414B2 (en) | 2018-02-06 | 2023-08-22 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US11387106B2 (en) | 2018-02-14 | 2022-07-12 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11939673B2 (en) | 2018-02-23 | 2024-03-26 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
US10847371B2 (en) | 2018-03-27 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11398382B2 (en) | 2018-03-27 | 2022-07-26 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US12020938B2 (en) | 2018-03-27 | 2024-06-25 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US10510536B2 (en) | 2018-03-29 | 2019-12-17 | Asm Ip Holding B.V. | Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber |
US10867786B2 (en) | 2018-03-30 | 2020-12-15 | Asm Ip Holding B.V. | Substrate processing method |
US10964591B2 (en) | 2018-04-20 | 2021-03-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Processes for reducing leakage and improving adhesion |
US11651994B2 (en) | 2018-04-20 | 2023-05-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Processes for reducing leakage and improving adhesion |
US12020983B2 (en) | 2018-04-20 | 2024-06-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Processes for reducing leakage and improving adhesion |
KR20190122523A (ko) * | 2018-04-20 | 2019-10-30 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 누설을 감소시키고 접착을 향상시키기 위한 프로세스들 |
US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
US11908733B2 (en) | 2018-05-28 | 2024-02-20 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11837483B2 (en) | 2018-06-04 | 2023-12-05 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11296189B2 (en) | 2018-06-21 | 2022-04-05 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11814715B2 (en) | 2018-06-27 | 2023-11-14 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11952658B2 (en) | 2018-06-27 | 2024-04-09 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10914004B2 (en) | 2018-06-29 | 2021-02-09 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
US11168395B2 (en) | 2018-06-29 | 2021-11-09 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
US11646197B2 (en) | 2018-07-03 | 2023-05-09 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755923B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11923190B2 (en) | 2018-07-03 | 2024-03-05 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10872774B2 (en) | 2018-07-24 | 2020-12-22 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
KR20200011342A (ko) * | 2018-07-24 | 2020-02-03 | 가부시키가이샤 히다치 하이테크놀로지즈 | 플라스마 처리 장치 및 플라스마 처리 방법 |
CN110752136B (zh) * | 2018-07-24 | 2023-06-23 | 株式会社日立高新技术 | 等离子处理装置以及等离子处理方法 |
CN110752136A (zh) * | 2018-07-24 | 2020-02-04 | 株式会社日立高新技术 | 等离子处理装置以及等离子处理方法 |
US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
US11664199B2 (en) | 2018-10-19 | 2023-05-30 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
US11735445B2 (en) | 2018-10-31 | 2023-08-22 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11866823B2 (en) | 2018-11-02 | 2024-01-09 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US11411088B2 (en) | 2018-11-16 | 2022-08-09 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11244825B2 (en) | 2018-11-16 | 2022-02-08 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11798999B2 (en) | 2018-11-16 | 2023-10-24 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11769670B2 (en) | 2018-12-13 | 2023-09-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
US11658029B2 (en) | 2018-12-14 | 2023-05-23 | Asm Ip Holding B.V. | Method of forming a device structure using selective deposition of gallium nitride and system for same |
US11959171B2 (en) | 2019-01-17 | 2024-04-16 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
US11615980B2 (en) | 2019-02-20 | 2023-03-28 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11798834B2 (en) | 2019-02-20 | 2023-10-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11629407B2 (en) | 2019-02-22 | 2023-04-18 | Asm Ip Holding B.V. | Substrate processing apparatus and method for processing substrates |
US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
US11901175B2 (en) | 2019-03-08 | 2024-02-13 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11814747B2 (en) | 2019-04-24 | 2023-11-14 | Asm Ip Holding B.V. | Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly |
US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
US11781221B2 (en) | 2019-05-07 | 2023-10-10 | Asm Ip Holding B.V. | Chemical source vessel with dip tube |
US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11996309B2 (en) | 2019-05-16 | 2024-05-28 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
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WO2021247249A1 (en) * | 2020-06-02 | 2021-12-09 | Lam Research Corporation | Photoelectron assisted plasma ignition |
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KR102319613B1 (ko) * | 2020-09-04 | 2021-10-29 | 서울대학교산학협력단 | 2차원 물질을 이용한 페로브스카이트 유연 투명 태양전지 |
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US11798799B2 (en) | 2021-08-09 | 2023-10-24 | Applied Materials, Inc. | Ultraviolet and ozone clean system |
WO2023019050A1 (en) * | 2021-08-09 | 2023-02-16 | Applied Materials, Inc. | Ultraviolet and ozone clean system |
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