KR100593960B1 - 광원자층 증착장치 및 증착방법 - Google Patents
광원자층 증착장치 및 증착방법 Download PDFInfo
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- KR100593960B1 KR100593960B1 KR1020040001762A KR20040001762A KR100593960B1 KR 100593960 B1 KR100593960 B1 KR 100593960B1 KR 1020040001762 A KR1020040001762 A KR 1020040001762A KR 20040001762 A KR20040001762 A KR 20040001762A KR 100593960 B1 KR100593960 B1 KR 100593960B1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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Abstract
본 발명은 광원자층 증착장치 및 증착방법에 관한 것으로, 내측 하부에 회전가능하게 설치됨과 아울러 다수의 기판(2)이 구비되는 서셉터(110)와; 상기 서셉터(110)에 설치되어 기판(2)을 가열시키는 가열기(112)와; 상기 기판(2)에 대향하여 반응챔버(100)내에 설치되고, UV램프(132)와 윈도우(134)를 내장하는 하우징(130)과; 상기 하우징(130)의 상부에 하우징(130)을 감싸도록 설치되고, 반응가스와 불활성가스를 각각 주입하는 제 1 주입구(122)와 제 2 주입구(124)를 갖는 주입헤드(120);를 포함하는 증착장치와, 이를 이용한 증착방법으로 기판상에 박막을 형성함으로써, 기판(2)에 흡착 및 퍼지되는 전구체에 의한 윈도우(134)의 코팅을 방지할 수 있고, 코팅방지를 위한 별도의 퍼지공정이 생략되어 제조공정이 간소화되며, 그로 인해 작업능률 및 생산성이 향상된다.
원자층, 증착, 장치, 방법, 반응챔버, 서셉터, 퍼지, 윈도우코팅
Description
도 1은, 종래의 광원자층 증착장치를 도시한 도면이다.
도 2는, 본 발명에 따른 반응챔버를 평면에서 본 개략도이다.
도 3은, 본 발명에 따른 광원자층 증착장치에 구성된 반응챔버를 도시한 도면이다.
도 4는, 본 발명에 따른 광원자층 증착방법을 도시한 블록도이다.
<도면의 주요부분에 대한 부호의 설명>
2 : 기판 10 : 증착장치
20 : 반응챔버 21 : 윈도우
23 : 가열기 30 : UV램프
40 : 가스공급관 41 : 퍼지가스공급관
42 : 반응가스공급관 43 : 캐리어가스공급관
44 : 전구체공급관 45,46,47 : 바이패스관
41a,42a,44a,45a,46a,47a : 밸브 50 : 전구체저장조
60 : 가스배출관 70 : 매스유동제어기
100 : 반응챔버 110 : 서셉터
112 : 가열기 120 : 주입헤드
120a : 격벽 122 : 제 1 주입구
124 : 제 2 주입구 126 : 배출구
130 : 하우징 132 : UV램프
134 : 윈도우
l : 주입헤드와 서셉터간의 간격
S1 : 기판 가열단계 S2 : 전구체 흡착단계
S3 : 1차 퍼지단계 S4 : 기판 일치단계
S5 : 박막형성단계 S6 : 2차 퍼지단계
S7 : 1차 배출단계 S8 : 2차 배출단계
본 발명은 광원자층 증착장치 및 증착방법에 관한 것으로, 보다 상세하게는 광원자층 증착장치로서 기판상에 박막을 형성시킬 때 전구체들에 의한 윈도우의 코팅을 방지하는 광원자층 증착장치 및 증착방법에 관한 것이다.
주지된 바와 같이, 반도체 산업은 매우 빠른 속도로 발전해 왔다. 특히 D-RAM의 집적도는 기하 급수적으로 증가되고 있으며, 각 개별 소자 및 영역의 점유면적의 감소가 요구되고 있다.
이에, 초 박막 제조에 있어 정확한 두께조절이 용이하고 신뢰성 및 공정 호환성이 우수한 새로운 방식의 박막 증착법이 요구되어 졌다. 이러한 요구에 대하여 최근에는 박막의 저온형성이 가능하고 우수한 계단 도포성(Step Coverage)과 특히 초 박막의 두께조절에 있어 탁월한 방법인 원자층 증착법에 관한 연구가 활발히 진행 중에 있는데, 반도체 산업의 디램 캐패시터(D-RAM Capaciator), 게이트 산화물(Gate Oxide), 배리어 금속(Barrier Metal) 등에 이용이 시도되고 있다.
이러한 원자층 증착법은, 일반적인 증착 방법인 화학증착법(Chemical Vapor Deposition)과는 달리 기판에 전구체(Precursor)를 교대로 공급하여 전구체의 화학적 흡착과 표면반응에 의해 박막을 성장시키는 저온 공정이다.
상기 원자층 증착법에 의하면, 전구체가 캐리어 가스(Carrier Gas)에 의해 가스라인을 통해 반응챔버(Reaction Chamber)에 들어와 자연스럽게 기판에 흡착하게 된다. 이때 화학적 결합으로 흡착되는 흡착원자는 기판상에 단원자층(Monolayer)을 형성하며 다른 흡착종은 물리적 결합으로 이루어진다. 이러한 반응이 끝나면 퍼지(Purge)가스를 주입하여 화학적 결합을 한 단원자 이외에 물리적으로 결합한 원자들을 떼어내어 제거함으로써 기판상에 단원자층만 증착되는 "원자층 증착"이 형성된다. 이러한 사이클을 컴퓨터로 수백 ~ 수만 횟수로 조절함으로써 원하는 원자층의 두께가 증착된다.
첨부도면 도 1은, 종래의 광원자층 증착장치를 도시한 도면으로서, 도시된 바와 같이, 종래의 원자층 증착장치(10)는, 그 내부에서 기판(2)상에 박막을 형성하는 반응챔버(20)가 구비되고, 이 반응챔버(20)의 하부에는 기판(2)을 가열하기 위한 가열기(Heater)(23)가 구비되며, 반응챔버(20)내로 퍼지가스와 반응가스 및 가스상태의 금속 전구체를 공급하는 가스공급관(40) 및 반응챔버(20)내의 가스를 배출하는 가스배출관(60)을 포함한다.
상기 반응챔버(20)의 상부에는 반응챔버(20)내의 가스가 상부로 방출되는 것을 차단하고 광원인 UV램프(30)로부터 발생한 광이 통과하도록 된 윈도우(Window)(21)가 설치된다.
상기 윈도우(21)는, 석영이나 MgF2 윈도우 등이 사용되어 UV램프의 광에너지를 투과시키는 역할을 한다. 그러나 주입되는 전구체가 윈도우표면에 흡착되어 박막으로 성막됨으로써 광의 투과도가 감소됨으로 인해 광을 이용한 기존 증착방법(예를 들면 Photo-CVD : 광화학증착법)의 실용화에 난제로 남아있다.
그리고, 상기 가스공급관(40)에는, 퍼지가스공급관(41), 반응가스공급관(42), 전구체공급관(44)이 소통가능하게 연결되어 있다.
또한, 상기 전구체공급관(44)은, 금속 전구체를 저장하는 전구체저장조(50)에 연결되어 있고, 상기 전구체저장조(50)에는 캐리어가스공급원에 연결되어 있는 캐리어가스공급관(43)이 연결되어 전구체저장조(50)에 캐리어 가스를 공급한다.
그리고, 상기 퍼지가스공급관(41)과 반응가스공급관(42) 및 전구체공급관(44)은, 가스배출관(60)에 연결되는 각각의 바이패스관(45)(46)(47)이 연결되어 있다.
상기 가스공급관(40)과 바이패스관(45)(46)(47)에는 각각의 가스조절밸브(41a)(42a)(44a)(45a)(46a)(47a)가 구비되어 있고, 이 가스조절밸브(41a)(42a)(44a)(45a)(46a)(47a)는 프로그램된 컴퓨터에 의해 제어된다.
그리고, 상기 퍼지가스공급관(41), 반응가스공급관(42), 및 캐리어가스공급관(43)상에는 각각 공급되는 퍼지가스, 반응가스 및 캐리어가스의 공급량을 제어하는 매스유동제어기(Mass Flow Controller)(70)가 설치된다.
이와 같이 이루어진 종래의 증착장치를 사용하여 원자층을 증착하는 방법에 대해 설명하면 다음과 같다.
기판(2)상에 형성하고자 하는 박막의 종류에 따라 전구체를 준비하여 전구체저장조(50)에 저장한 다음, 전구체를 소정의 온도로 가열하여 증기상태로 전구체공급관(44) 및 가스공급관(40)을 통해 반응챔버(20)내로 주입한다.
상기 전구체는, 주로 액체 상태의 금속유기(Metal Organic) 또는 질화물 염화물 등의 전구체가 사용되며, 가스 전구체의 경우는 직접 주입도 가능하지만 액상 전구체의 경우는 열을 가할 수 있는 전구체저장조(50)내에서 적정온도로 가열하여 증기압(Vapor Pressure)을 크게 한 후, 도 1에서와 같이, 캐리어가스(Carrier Gas) 를 이용한 버블러타입(Bubbler Type)이나 증발기(Vaporizer)를 갖춘 액체이송시스템(Liquid Delivery System)을 이용하여 가스상태로 반응챔버(20)내로 공급된다.
상기와 같이 반응챔버(20)내로 주입된 전구체들은 캐리어가스(불활성가스)에 의해 분리된 상태에서 순차적으로 공급되어 기판(2) 표면에 흡착되고, 흡착된 전구체는 UV램프(30)에 의해서 조사된 광에 의해 일부 분해가 일어나는데, 이는 윈도우(21)를 통과한 제한된 광 조사 영역에서만 나타나게 된다.
다음에, 퍼지가스를 퍼지가스공급관(41)을 통해 반응챔버(20)내로 주입하여 반응챔버(20)내를 퍼지한다. 그러면 이 퍼지 공정에서는, 화학적으로 흡착된 전구체를 제외한 나머지 전구체는 제거된다.
이후, 열적에너지(Thermal Energy)에 의해서는 흡착된 전구체에 반응가스가 반응가스공급관(42) 및 가스공급관(40)을 통해 반응챔버(20)내로 주입된다.
그러면, 상기와 같이 주입된 반응가스가 윈도우(21)를 통과한 광에 조사된 기판(2)에서만 흡착된 전구체와 반응하여 성막이 형성된다. 이를 광에너지에 의한 증착(Photo-induced)이라 한다. 즉, 반응가스 분자는 조사된 광에 의해 활성화되어 기판(2)에 흡착된 전구체와 반응하여 원하는 금속, 반도체 또는 절연체 등의 박막을 형성한다. 또한, 반응가스가 광에너지 뿐만 아니라 열적에너지에 의해 반응하여 성막하는 경우를 광도움 증착(Photo-assisted)이라 하며, 이런 경우는 광이 조사되지 않은 곳에도 성막이 이루어진다.
마지막으로 퍼지 단계를 거쳐 잔존하는 반응가스와 잔류물 등을 제거함으로써 1사이클이 끝나게 된다.
그러나, 이와 같은 종래의 증착장치(10)는, 윈도우(21)에 전구체의 코팅을 방지하기 위한 방법이 없어 광에 의한 증착법의 실용화에 큰 난제로 대두되었다.
이에, 본 발명은 전술한 바와 같은 종래기술의 문제점을 해결하기 위해 안출된 것으로, 윈도우에 전구체가 코팅되는 것을 차단하기 위해 광원장치를 증착챔버내로 설치함과 아울러 연속적인 증착시스템을 이용하여, 윈도우코팅의 방지 뿐만 아니라 제조공정이 간소화되고, 작업능률 및 생산성이 향상되는 광원자층 증착장치 및 증착방법을 제공하는데 그 목적이 있다.
상술한 목적을 달성하기 위한 본 발명의 광원자층 증착장치는, 그 일측에 전구체공급관과 가스배출관이 연결되어 있는 반응챔버내로 가스상태의 전구체를 주입하여 기판에 흡착시키고, 불활성가스와 반응가스를 순차적으로 주입하여 기판에 박막을 성형하는 광원자층 증착장치에 있어서, 상기 반응챔버는, 내측 하부에 회전가능하게 설치됨과 아울러 다수의 기판이 구비되는 서셉터와; 상기 서셉터에 설치되어 기판을 가열시키는 가열기와; 상기 기판에 대향하여 반응챔버내에 설치되고, UV램프와 윈도우를 내장하는 하우징과; 상기 하우징의 상부에 하우징을 감싸도록 설치되고, 반응가스와 불활성가스를 각각 주입하는 제 1 주입구와 제 2 주입구를 갖 는 주입헤드;를 포함하여 구성된 것을 특징으로 한다.
또한, 상기 주입헤드의 제 1 주입구와 제 2 주입구 사이에는 가스를 반응챔버 외측으로 배출시키는 배출구가 형성된 것을 특징으로 한다.
그리고, 상기 제 1 주입구로는 반응가스가 공급되고, 상기 제 2 주입구로는 불활성가스가 공급되는 것을 특징으로 한다.
또한, 상기 주입헤드의 제 2 주입구로 주입되는 불활성가스는, 반응가스보다 많은 양이 주입되어 반응가스를 퍼지하는 것을 특징으로 한다.
그리고, 상기 주입헤드는, 그 단부가 서셉터와 1∼3㎜ 간격으로 이격되어 UV램프로부터 조사된 광의 분산을 방지하도록 형성된 것을 특징으로 한다.
한편, 본 발명의 광원자층 증착방법은, 서셉터를 주입헤드와 이격시킨 상태에서 기판을 설치하고 가열하는 단계와; 반응챔버에 연결된 전구체공급관을 통해 반응챔버내로 전구체를 공급하여 주입헤드의 외측에서 기판에 화학적으로 흡착시키는 단계와; 기판에 전구체의 화학적 흡착 후, 서셉터가 회전되어 기판을 주입헤드에 일치시키는 단계와; 기판에 주입헤드의 UV램프를 조사하면서 제 1 주입구로 반응가스를 주입하여 기판에 화학적 흡착된 전구체와 반응시켜 박막을 형성하는 단계;를 포함하여 구성된 것을 특징으로 한다.
또한, 상기 기판에 전구체 흡착단계 후, 주입헤드의 제 2 주입구로 불활성가스를 주입하여 기판에 화학적 흡착된 전구체상에 물리적으로 흡착된 전구체를 퍼지하는 단계를 더 포함하여 구성된 것을 특징으로 한다.
그리고, 상기 박막형성단계 후, 주입헤드의 제 2 주입구로 반응가스보다 많 은 양의 불활성가스를 주입하여 반응가스를 퍼지하는 단계를 더 포함하여 구성된 것을 특징으로 한다.
이하, 본 발명의 바람직한 실시예를 첨부도면을 참조하여 상세히 설명하면 다음과 같다.
먼저, 본 발명을 설명하기에 앞서, 종래기술과 동일한 부분에 대해서는 동일한 부호를 부여하고, 중복되는 설명은 생략한다.
첨부도면 도 2 및 도 3은, 본 발명에 따른 광원자층 증착장치 및 이에 구성된 반응챔버를 도시한 도면이다.
본 발명에 따른 광원자층 증착장치(10)에 구성된 반응챔버(100)는 도시된 바와 같이, 그 내측 하부에 기어나 모터수단 등으로 이루어진 회전장치를 갖는 서셉터(110)가 회전가능하게 설치된다.
그리고, 상기 서셉터(110)에는 다수의 기판(2)이 등간격으로 이격되어 구비되고, 그 내부에는 기판(2)을 가열시키기 위한 히팅코일로 이루어진 가열기(112)가 구비된다.
한편, 본 실시예에서는 서셉터(110)상에 다수의 기판(2)이 90도의 등간격으로 이격되어 구비된 것을 그 일례로 도시하였다.
또한, 상기 서셉터(110)상의 기판(2)에 대향하는 반응챔버(100)의 내측 상부에는 윈도우(134)가 설치되고, 이 윈도우(134)의 상부에는 UV램프(132)가 설치되며, 이 UV램프(132)와 윈도우(134)는 하우징(130)에 내장되어 구비된다.
그리고, 상기 반응챔버(100)의 상부에는 그 내부에 하우징(130)을 내장하는 주입헤드(120)가 설치된다.
본 실시예에서는, 도 2에 도시된 바와 같이, 상기 주입헤드(120)가 그 평면이 "+"자 형상으로 이루어진 4개로 구비된다.
또한, 각각의 단위 주입헤드(120)에는, 도 3에 도시된 바와 같이, 반응가스(굵은 실선의 화살표)와 불활성가스(점선의 화살표)가 각각 주입되어 유동하는 제 1 주입구(122)와 제 2 주입구(124)가 형성되고, 이 제 1 주입구(122)와 제 2 주입구(124) 사이에는 퍼지된 반응가스와 불활성가스를 반응챔버(100) 외측으로 배출시키는 배출구(126)가 형성된다.
이때, 상기 주입헤드(120)의 제 2 주입구(124)로 주입되는 불활성가스는, 반응가스보다 많은 양이 주입되어 반응가스를 퍼지한다.
한편, 본 실시예에서는 상기 반응가스로 산소가스를 사용하고, 불활성가스로는 아르곤가스를 사용한다.
그리고, 상기 주입헤드(120)를 이루는 다수의 격벽(120a) 중 최외측 격벽은, 서셉터(110)와 1∼3㎜ 간격(l)으로 이격되어 UV램프(132)로부터 조사된 광(가는실선의 화살표)의 분산을 방지하도록 형성된다.
한편, 상기와 같이 구성된 광원자층 증착장치를 이용한 광원자층 증착방법에 대하여 도 4를 참조하여 설명한다.
먼저, 서셉터(110)를 주입헤드(120)와 이격시킨 상태에서 기판(2)을 설치하 고 가열하는 기판 가열단계(S1)가 행하여 진다.
그리고, 상기 가열단계(S1) 후, 반응챔버(100)에 연결된 전구체공급관(44)을 통해 반응챔버(100)내로 전구체를 공급하여 기판(2)에 화학적으로 흡착시키는 전구체 흡착단계(S2)가 행하여 진다.
상기 전구체 흡착단계(S2) 후에는, 기판(2)에 전구체가 화학적으로 흡착된 후, 서셉터(110)가 회전하여 기판(2)을 주입헤드(120)에 일치시키는 기판 일치단계(S4)와, 기판(2)에 주입헤드(120)의 UV램프(132)를 조사하면서 제 1 주입구(122)로 반응가스를 주입하여 기판(2)에 화학적으로 흡착된 전구체와 반응시켜 박막을 형성하는 박막형성단계(S5)가 순차적으로 행하여 진다.
그리고, 상기 전구체 흡착단계(S2)와 기판 일치단계(S4) 사이에는, 주입헤드(120)의 제 2 주입구(124)로 불활성가스를 주입하여 기판(2)에 화학적 흡착된 전구체상에 물리적으로 흡착된 전구체를 퍼지하는 1차 퍼지단계(S3)가 행하여 진다.
또한, 상기 박막형성단계(S5) 후에는, 주입헤드(120)의 제 2 주입구(124)로 반응가스보다 많은 양의 불활성가스를 주입하여 반응가스를 퍼지하는 2차 퍼지단계(S6)가 행하여 진다.
그리고, 상기 2차 퍼지단계(S6) 후에는, 제 1 주입구(122)와 제 2 주입구(124) 사이의 배출구(126)에 펌핑수단을 연결하여 퍼지된 반응가스와 불활성가스를 배출시키는 1차 배출단계(S7)가 행하여 지고, 상기와 같은 1차 배출단계(S7) 후에는, 반응챔버(100)의 가스배출관(60)에 펌핑수단을 연결하여 반 응챔버(100)내에 잔존하는 모든 가스와 잔류물을 배출시키는 제 2 배출단계(S8)가 행하여 진다.
이하에서는, 상기와 같이 구성된 본 발명에 따른 광원자층 증착장치와 증착방법을 이용하여 기판에 전구체를 증착시키는 과정을 설명한다.
본 발명의 증착은, 전구체가 기판(2)상에 열에너지와 광에너지에 의해서 박막으로 형성되어 이루어진다.
이를 좀 더 상세히 살펴보면, 먼저 주입헤드(120)와 이격되게 구비된 서셉터(110)상에 기판(2)을 설치한 후, 가열기(112)로 기판(2)을 가열한다(S1).
이후, 반응챔버(100)에 연결된 전구체공급관(44)을 통해 반응챔버(100)내로 전구체를 공급하여 가열된 기판(2)상에 전구체를 흡착시킨다(S2).
이때, 전구체 공급 방법으로는, Flow Injection Type, Top Injection Type 및 Injection Head Type을 사용할 수 있다.
먼저, Flow Injection Type을 적용할 경우는, 반응챔버(100)내는 전구체의 분위기로 조성되며 반응챔버(100)로 공급된 증기상태의 전구체는 가열된 서셉터(110)상의 기판(2)에 화학적으로 흡착된다. 그리고, Top Injection Type을 적용할 경우에는, 기판(2) 위 반응챔버(100)의 내측 상부에 전구체 공급장치를 설치하여 이 전구체 공급장치를 통해 공급된 증기상태의 전구체가 가열된 서셉터(110)상의 기판(2)에 화학적으로 흡착되며, Injection Head Type을 적용할 경우에는, 반응챔버(100) 상부에 전구체 공급헤드를 설치하여 이 전구체 공급헤드 를 통해 공급된 증기상태의 전구체가 가열된 서셉터(110)상의 기판(2)에 화학적으로 흡착된다.
특히, Injection Head Type은, 반응챔버(100)의 내측 상부에 전구체 공급헤드를 가스 주입헤드(120)와 교번되게 설치하여 기판(2)이 1회전할 때 2사이클의 증착이 이루어지고, 나머지 Flow Injection Type과 Top Injection Type은 4사이클의 증착이 이루어진다.
한편, 상기와 같이 기판(2)상에 흡착된 전구체 중 일부의 전구체는 기판(2)상에 화학적인 결합으로 1차 흡착되고, 나머지 전구체는 화학적으로 흡착된 전구체상에 물리적인 결합으로 2차 흡착된다.
전구체가 흡착된 후, 주입헤드(120)의 제 2 주입구(124)를 통해 아르곤가스와 같은 불활성가스를 주입하여 물리적으로 흡착된 전구체를 화학적으로 흡착된 전구체로부터 분리시켜 퍼지한다(S3).
이후, 반응챔버(100)내의 서셉터(110)를 90도 회전시켜 서셉터(110)상의 기판(2)을 주입헤드(120)에 일치시키고(S4), 일치된 상태에서 UV램프(132)를 작동시켜 UV램프(132)에서 발생된 광을 윈도우(134)를 통해 기판(2)에 조사하면서 주입헤드(120)의 제 1 주입구(122)로 반응가스를 주입하여 기판(2)에 화학적으로 흡착된 전구체와 반응시켜 박막을 형성시킨다(S5).
이때, 상기 UV램프(132)에서 조사된 광은 주입헤드(120)의 격벽(120a)에 의해서 외부로의 분산이 방지된다.
그리고, 상기와 같이 박막이 형성(S5)된 후에는, 주입헤드(120)의 제 2 주입 구(124)로 불활성가스를 반응가스보다 많이 주입하여 반응가스를 퍼지하고(S6), 상기 제 1 주입구(122)와 제 2 주입구(124) 사이의 배출구(126)에 펌핑수단을 연결하여 퍼지된 반응가스와 불활성가스를 배출구(126)를 통해 반응챔버(100) 외부로 배출시킨다(S7).
이후, 상기 반응챔버(100)의 가스배출관(60)에 펌핑수단을 연결하여 반응챔버(100)내에 잔존하는 모든 가스와 잔류물을 가스배출관(60)으로 모두 배출시킴으로써(S8) 1사이클의 작업이 완료된다.
이와 같은 1사이클의 작업은 작업조건에 따라서 여러번 반복적으로 이루어질 수도 있다.
따라서, 상기 전구체의 흡착 및 퍼지가 주입헤드(120)의 외측에서 이루어짐으로써 전구체에 의한 윈도우(134)의 코팅을 방지할 수 있고, 코팅을 방지하기 위해 퍼지공정이 생략되어 제조공정이 간소화되고, 그로 인해 작업능률 및 생산성이 향상된다.
이상에서 설명한 바와 같이, 본 발명의 광원자층 증착장치 및 증착방법에 의하면, 기판에 흡착 및 퍼지되는 전구체에 의한 윈도우의 코팅을 방지할 수 있고, 코팅방지를 위한 별도의 퍼지공정이 생략되어 제조공정이 간소화되며, 그로 인해 작업능률 및 생산성이 향상되는 효과가 있다.
Claims (8)
- 그 일측에 전구체공급관(44)과 가스배출관(60)이 연결되어 있는 반응챔버(100)내로 가스상태의 전구체를 주입하여 기판(2)에 흡착시키고, 불활성가스와 반응가스를 순차적으로 주입하여 기판(2)에 박막을 성형하는 광원자층 증착장치에 있어서,상기 반응챔버(100)는, 내측 하부에 회전가능하게 설치됨과 아울러 다수의 기판(2)이 구비되는 서셉터(110)와;상기 서셉터(110)에 설치되어 기판(2)을 가열시키는 가열기(112)와;상기 기판(2)에 대향하여 반응챔버(100)내에 설치되고, UV램프(132)와 윈도우(134)를 내장하는 하우징(130)과;상기 하우징(130)의 상부에 하우징(130)을 감싸도록 설치되고, 반응가스와 불활성가스를 각각 주입하는 제 1 주입구(122)와 제 2 주입구(124)를 갖는 주입헤드(120)와;를 포함하여 구성된 것을 특징으로 하는 광원자층 증착장치.
- 제 1 항에 있어서,상기 주입헤드(120)의 제 1 주입구(122)와 제 2 주입구(124) 사이에는 가스를 반응챔버(100) 외측으로 배출시키는 배출구(126)가 형성된 것을 특징으로 하는 광원자층 증착장치.
- 제 2 항에 있어서,상기 제 1 주입구(122)로는 반응가스가 공급되고, 상기 제 2 주입구(124)로는 불활성가스가 공급되는 것을 특징으로 하는 광원자층 증착장치.
- 제 3 항에 있어서,상기 주입헤드(120)의 제 2 주입구(124)로 주입되는 불활성가스는, 반응가스보다 많은 양이 주입되어 반응가스를 퍼지하는 것을 특징으로 하는 광원자층 증착장치.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서,상기 주입헤드(120)는, 그 단부가 서셉터(110)와 1∼3㎜ 간격(l)으로 이격되어 UV램프(132)로부터 조사된 광의 분산을 방지하도록 형성된 것을 특징으로 하는 광원자층 증착장치.
- 서셉터(110)를 주입헤드(120)와 이격시킨 상태에서 기판(2)을 설치하고 가열하는 단계(S1)와;반응챔버(100)에 연결된 전구체공급관(44)을 통해 반응챔버(100)내로 전구체를 공급하여 주입헤드(120)의 외측에서 기판(2)에 화학적으로 흡착시키는 단계(S2)와;기판(2)에 전구체의 화학적 흡착 후, 서셉터(110)가 회전되어 기판(2)을 주입헤드(120)에 일치시키는 단계(S4)와;기판(2)에 주입헤드(120)의 UV램프(132)를 조사하면서 제 1 주입구(122)로 반응가스를 주입하여 기판(2)에 화학적 흡착된 전구체와 반응시켜 박막을 형성하는 단계(S5)와;를 포함하여 구성된 것을 특징으로 하는 광원자층 증착방법.
- 제 6 항에 있어서,상기 기판(2)에 전구체 흡착단계(S2) 후, 주입헤드(120)의 제 2 주입구(124)로 불활성가스를 주입하여 기판(2)에 화학적 흡착된 전구체상에 물리적으로 흡착된 전구체를 퍼지하는 단계(S3)를 더 포함하여 구성된 것을 특징으로 하는 광원자층 증착방법.
- 제 6 항 또는 제 7 항에 있어서,상기 박막형성단계(S5) 후, 주입헤드(120)의 제 2 주입구(124)로 반응가스보다 많은 양의 불활성가스를 주입하여 반응가스를 퍼지하는 단계(S6)를 더 포함하여 구성된 것을 특징으로 하는 광원자층 증착방법.
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JP5732284B2 (ja) | 2010-08-27 | 2015-06-10 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
KR101285314B1 (ko) * | 2011-10-20 | 2013-07-11 | 오스템임플란트 주식회사 | 치과용 임플란트의 고 에너지선 조사장치 |
KR101886740B1 (ko) | 2011-11-01 | 2018-09-11 | 삼성디스플레이 주식회사 | 기상 증착 장치 및 유기 발광 표시 장치 제조 방법 |
CN102392229A (zh) * | 2011-11-01 | 2012-03-28 | 嘉兴科民电子设备技术有限公司 | 一种原子层沉积设备 |
KR101430656B1 (ko) * | 2012-05-29 | 2014-08-18 | 주식회사 에스에프에이 | 원자층 증착장치 및 그 증착방법 |
KR101430657B1 (ko) * | 2012-05-29 | 2014-09-23 | 주식회사 에스에프에이 | 원자층 증착장치 |
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