JP5732284B2 - 成膜装置および成膜方法 - Google Patents
成膜装置および成膜方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 18
- 239000011261 inert gas Substances 0.000 claims description 107
- 239000000758 substrate Substances 0.000 claims description 96
- 239000007789 gas Substances 0.000 claims description 92
- 239000012495 reaction gas Substances 0.000 claims description 82
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 230000003028 elevating effect Effects 0.000 claims description 21
- 230000007246 mechanism Effects 0.000 claims description 15
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 7
- 238000009434 installation Methods 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 106
- 239000004065 semiconductor Substances 0.000 description 73
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 36
- 229910010271 silicon carbide Inorganic materials 0.000 description 36
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 18
- 229910052799 carbon Inorganic materials 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 238000010926 purge Methods 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000012856 packing Methods 0.000 description 7
- 238000001947 vapour-phase growth Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 3
- 238000010574 gas phase reaction Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000002779 inactivation Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
Description
このようなヒータ基材と水素ガスとの反応はヒータを劣化させ、成膜装置におけるヒータの寿命を短くしてしまうことになる。
本発明の第1の態様において、第2の空間に不活性ガスを供給する第1の不活性ガス供給部と、第3の空間に不活性ガスを供給する第2の不活性ガス供給部とをさらに備えていることが好ましい。
また、1000℃以上の高温環境下では、CH4がさらに分解するなどして、C2H2、CH3、C2H3なども発生する。
高抵抗のGaAsなどの半絶縁性基板などを用いてもよい。
ガス雰囲気下とすることができる。
P4<P1
P4<P2
P4<P3
P1<P2
P1<P3
P4<P1
P4<P2
P4<P3
P8<P5
P8<P6
P8<P7
2、202 ライナ
3a、3b、203a、203b 流路
4、204 第1の不活性ガス供給部
5、5’、205 排気部
6、206 半導体基板
7、207 サセプタ
8、208 下部ヒータ
9、11、209、211 フランジ部
10、12、210、212 パッキン
14、214 反応ガス供給部
18 上部ヒータ
20、220 シャワープレート
21、221 貫通孔
23、223 回転筒
25、35、225、235 不活性ガス
26、226 反応ガス
30、230 胴部
31、231 頭部
30’ 第2のライナ
31’ 第1のライナ
32’ 第3のライナ
34、234 第2の不活性ガス供給部
37、237 第1の不活性ガス排出部
38、238 第2の不活性ガス排出部
41 制御装置
42、44、46 タンク
43、45、47 流量計
47 昇降機構
48 昇降棒
55 リフレクタ
56 第1の搬送口
57 第2の搬送口
100、200 成膜装置
A、A’、B、B’、C、C’、D、D’ 空間
901、902、903、904 圧力計
Claims (9)
- 成膜室と、
前記成膜室の上部に設けられてSiC膜を基板上に形成するための反応ガスを前記成膜室内に供給する供給部と、
前記成膜室内に配置される中空筒状のライナと、
前記成膜室内に設けられて前記基板が載置されるサセプタと、
前記サセプタの上方で、前記成膜室の内壁と前記ライナの間に位置し、前記基板を上方から加熱する上部ヒータと、
前記サセプタの下方に位置し、前記基板を下方から加熱する下部ヒータと、
前記サセプタ周囲の第1の空間から排出される生成ガスと、前記上部ヒータが配置された第2の空間と前記下部ヒータが配置された第3の空間にそれぞれ供給された不活性ガスを、前記成膜室内部で前記サセプタの設置位置より下方の第4の空間より排出する排気部とを備えたことを特徴とする成膜装置。 - 前記第1の空間の圧力は、前記第2の空間の圧力および前記第3の空間の圧力のいずれよりも低いことを特徴とする請求項1に記載の成膜装置。
- 前記上部ヒータの上方に配置されたリフレクタを有することを特徴とする請求項1または2に記載の成膜装置。
- 前記不活性ガスはアルゴンガスであることを特徴とする請求項1〜3のいずれか1項に記載の成膜装置。
- 前記第2の空間に不活性ガスを供給する第1の不活性ガス供給部と、
前記第3の空間に不活性ガスを供給する第2の不活性ガス供給部とをさらに備えたことを特徴とする請求項1〜4のいずれか1項に記載の成膜装置。 - 前記第4の空間の圧力は、前記第1の空間の圧力、前記第2の空間の圧力および前記第3の空間の圧力のいずれよりも低いことを特徴とする請求項2に記載の成膜装置。
- 前記ライナは、前記供給部の近くに配置されて、前記供給部から前記サセプタに向けて流下する前記反応ガスの流路となる上部ライナと、
内部に前記サセプタを支持する回転筒が配置される下部ライナとを有し、
前記成膜室の外部には前記下部ライナの昇降を制御する昇降機構が配置され、
前記昇降機構の制御により前記下部ライナを成膜が行われる位置より上昇させて、前記下部ライナに設けられた開口部から前記基板を搬送するよう構成されたことを特徴とする請求項1〜6のいずれか1項に記載の成膜装置。 - 成膜室内でサセプタ上に基板を載置し、
前記基板の上方に設けられた上部ヒータと、前記基板の下方に設けられた下部ヒータとにそれぞれ不活性ガスを供給し、
前記上部ヒータによって上方から、前記下部ヒータによって下方から前記基板を加熱しながらSiC膜を形成するための反応ガスを前記成膜室内に供給して前記基板の上にSiC膜を形成し、
前記サセプタ周囲の第1の空間から排出される生成ガスと、前記上部ヒータが配置された第2の空間と前記下部ヒータが配置された第3の空間にそれぞれ供給された不活性ガスを、前記成膜室内部で前記サセプタの設置位置より下方の第4の空間より同一排気部から排出することを特徴とする成膜方法。 - 前記第1の空間の圧力は、前記第2の空間の圧力および前記第3の空間の圧力のいずれよりも低く、
前記第4の空間の圧力は、前記第1の空間の圧力、前記第2の空間の圧力および前記第3の空間の圧力のいずれよりも低いことを特徴とする請求項8に記載の成膜方法。
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JP2011056995A JP5732284B2 (ja) | 2010-08-27 | 2011-03-15 | 成膜装置および成膜方法 |
KR1020110049088A KR101331011B1 (ko) | 2010-08-27 | 2011-05-24 | 성막 장치 및 성막 방법 |
US13/196,309 US20120048180A1 (en) | 2010-08-27 | 2011-08-02 | Film-forming manufacturing apparatus and method |
US14/812,130 US9873941B2 (en) | 2010-08-27 | 2015-07-29 | Film-forming manufacturing apparatus and method |
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JP2013207196A (ja) * | 2012-03-29 | 2013-10-07 | Nuflare Technology Inc | 成膜装置および成膜方法 |
KR101378083B1 (ko) * | 2012-06-14 | 2014-03-27 | 주식회사 수앤테크 | 기판처리장치 |
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US20150329967A1 (en) | 2015-11-19 |
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