JP5443096B2 - 半導体製造装置および半導体製造方法 - Google Patents
半導体製造装置および半導体製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000010926 purge Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
- 230000007246 mechanism Effects 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 5
- 238000005192 partition Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 39
- 239000012535 impurity Substances 0.000 description 7
- 238000011109 contamination Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 3
- 239000005052 trichlorosilane Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 101100116570 Caenorhabditis elegans cup-2 gene Proteins 0.000 description 1
- 101100116572 Drosophila melanogaster Der-1 gene Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/12—Etching in gas atmosphere or plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Description
図1に本実施形態の半導体製造装置であるエピタキシャル成長装置の断面図を示す。図に示すように、例えばφ200mmのウェーハwが成膜処理される反応炉11には、反応炉11上方より、トリクロロシラン、ジクロロシランなどのソースガスを含むプロセスガスなどを、所定の流量でウェーハw上に供給するためのガス供給機構(図示せず)と接続されたガス供給口12が設置されている。反応炉11下方には、例えば2箇所にガスを排出し、反応炉11内の圧力を一定(常圧)に制御するためのガス排出機構(図示せず)と接続されたガス排出口13が設置されている。
本実施形態において、実施形態1と半導体製造装置の構成は同様であるが、ヒータ電極部とブースバーの接続部の上に分離板を設けている点で実施形態1と異なっている。
12…ガス供給口
13…ガス排出口
14…整流板
15…サセプタ
16…リング
17…回転駆動制御機構
18…インヒータ
19…アウトヒータ
20…リフレクター
21…突き上げシャフト
22…ブースバー
23…ヒータシャフト
24…電極
25…ベース
31…分離板
41…パージガス導入部
42…パージガス排出部
Claims (5)
- ウェーハが導入される反応炉と、
前記反応炉にプロセスガスを供給するためのガス供給機構と、
前記反応炉よりガスを排出するためのガス排出機構と、
前記ウェーハを載置するウェーハ支持部材と、
前記ウェーハを所定の温度に加熱するためのヒータエレメントと、このヒータエレメントと一体成型され、前記ヒータエレメントの裏面側に突出して形成されたヒータ電極部とを有するヒータと、
前記反応室内に設けられ、一端部が前記ヒータ電極部の下端部と接続され、かつ、他端部が外部から電圧が印加される電極の上端部と接続され、前記ヒータ電極部に電圧を印加するための電極部品と、
前記電極部品を固定するためのベースと、
前記ウェーハを回転させるための回転駆動制御機構と、を備え、
前記ヒータ電極部の表面のうち少なくとも前記電極部品との接続部が、前記ヒータエレメントから離間しており、前記接続部の少なくとも一部が、前記ベースの上面より下部に配置されることを特徴とする半導体製造装置。 - 前記接続部の上端と前記ウェーハ支持部材のウェーハ支持面との距離が、前記ウェーハの径の1/2以上であり、前記ヒータは、前記接続部の上部が800℃以上となるように、前記ウェーハを前記所定の温度に加熱することを特徴とする請求項1に記載の半導体製造装置。
- 前記接続部と前記ヒータエレメントとを間仕切る分離板を備えることを特徴とする請求項1又は請求項2に記載の半導体製造装置。
- 前記分離板の下方をガスパージするためのパージガス導入部と、
前記パージガスを排出するためのパージガス排出部を備えることを特徴とする請求項3に記載の半導体製造装置。 - 反応炉内にウェーハを導入し、
ヒータエレメントと一体成型され、前記ヒータエレメントの裏面側に突出して形成されるとともに、前記反応炉内に設けられた電極部品の一端部に前記突出部分の下端部が接続され、表面のうち少なくとも前記電極部品との接続部が前記ヒータエレメントから離間し、かつ、前記接続部の少なくとも一部が、前記電極部品を固定するベースの上面より下部に配置されたヒータ電極部に対して前記電極部品から電圧印加し、
前記ヒータエレメントを発熱させることにより、前記ウェーハを所定温度で加熱し、
前記ウェーハを回転させ、前記ウェーハ上にプロセスガスを供給することにより、前記ウェーハ上に成膜することを特徴とする半導体製造方法。
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JP2009187390A JP5443096B2 (ja) | 2009-08-12 | 2009-08-12 | 半導体製造装置および半導体製造方法 |
US12/853,107 US9093484B2 (en) | 2009-08-12 | 2010-08-09 | Manufacturing apparatus and method for semiconductor device |
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JP5443096B2 (ja) * | 2009-08-12 | 2014-03-19 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
JP5732284B2 (ja) * | 2010-08-27 | 2015-06-10 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
US20120244684A1 (en) * | 2011-03-24 | 2012-09-27 | Kunihiko Suzuki | Film-forming apparatus and method |
JP5802052B2 (ja) | 2011-05-19 | 2015-10-28 | 株式会社ニューフレアテクノロジー | 半導体製造装置及び半導体製造方法 |
JP1541874S (ja) * | 2015-03-16 | 2016-01-18 | ||
TWI743446B (zh) * | 2018-02-20 | 2021-10-21 | 美商應用材料股份有限公司 | 用於原子層沉積(ald)溫度均勻性的熱解氮化硼(pbn)加熱器 |
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JP3477953B2 (ja) * | 1995-10-18 | 2003-12-10 | 東京エレクトロン株式会社 | 熱処理装置 |
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JP2005183494A (ja) * | 2003-12-17 | 2005-07-07 | Hitachi Kokusai Electric Inc | 基板処理装置 |
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KR100811389B1 (ko) * | 2006-03-24 | 2008-03-07 | 가부시키가이샤 뉴플레어 테크놀로지 | 반도체 제조 장치와 히터 |
JP4870604B2 (ja) | 2007-03-29 | 2012-02-08 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
US8961691B2 (en) * | 2008-09-04 | 2015-02-24 | Tokyo Electron Limited | Film deposition apparatus, film deposition method, computer readable storage medium for storing a program causing the apparatus to perform the method |
JP5443096B2 (ja) * | 2009-08-12 | 2014-03-19 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
JP5341706B2 (ja) * | 2009-10-16 | 2013-11-13 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
JP5662749B2 (ja) * | 2010-09-22 | 2015-02-04 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
JP5802052B2 (ja) * | 2011-05-19 | 2015-10-28 | 株式会社ニューフレアテクノロジー | 半導体製造装置及び半導体製造方法 |
JP6000676B2 (ja) * | 2011-06-21 | 2016-10-05 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
JP5851149B2 (ja) * | 2011-08-08 | 2016-02-03 | 株式会社ニューフレアテクノロジー | 成膜装置および成膜方法 |
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US20110039399A1 (en) | 2011-02-17 |
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