JP5646463B2 - 堆積反応炉のための方法および装置 - Google Patents
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
Description
前駆体蒸気を少なくとも1つの供給管路に沿って堆積反応炉の反応室に導くことと、
反応室内に前駆体蒸気の鉛直流を作り出してこれを反応室内の鉛直に配置された1回分の基板間に鉛直方向に入り込ませることによって、上記鉛直に配置された基板の表面に材料を堆積させることと、
を含む方法が提供される。
前駆体蒸気を堆積反応炉の反応室に供給するように構成された少なくとも1つの供給管路を備えた装置であって、
上記反応室は、上記反応室内に前駆体蒸気の鉛直流を作り出してこれを上記反応室内の鉛直に配置された1回分の基板間に鉛直方向に入り込ませることによって、上記鉛直に配置された基板の表面に材料を堆積させるように構成された、
装置が提供される。
Claims (17)
- 二重蓋システムを有するALD(原子層堆積)反応装置であって、真空室蓋及び該真空室蓋に一体化される反応室蓋を備えるALD反応装置を用意することと;
前記二重蓋システムの前記反応室蓋によって前記ALD反応装置の反応室を密閉することと;
前記二重蓋システムの前記真空室蓋によって前記ALD反応装置の真空室を密閉することと;
前駆体蒸気を、少なくとも1つの供給管路から前記二重蓋システムの前記反応室蓋を経由して前記反応室に導くことと;
前記反応室内に鉛直方向に立てて配された複数の基板の各々の表面に沿って、反応空間の上側から前記反応空間の底側まで前記表面に基本的に平行に流れるような、前駆体蒸気の鉛直方向の流れを作り出し、前記複数の基板同士の間に前記前駆体蒸気が入り込むようにすることにより、前記表面の各々に材料を堆積させることと、を含む方法。 - 前記鉛直に配された複数の基板は、基板ホルダ内に並行に配置された1組のウェーハを含み、前記1組のウェーハは少なくとも2枚のウェーハを含む、請求項1に記載の方法。
- 前記反応室への前記基板ホルダの装填および取り出しは前記反応室の上側から行われる、請求項2に記載の方法。
- 前記反応室蓋は可動であり、前記基板ホルダ前記反応室蓋に取り付けられる、請求項2または3に記載の方法。
- 前記前駆体蒸気は前記反応室蓋を通じて容積拡張部に導かれ、さらに前記容積拡張部から分配板を通して鉛直方向に、前記基板を収容している前記反応室の部分に導かれる、請求項4に記載の方法。
- ALD法に従い、自己飽和表面反応を繰り返し生じさせることによって、薄膜が基板表面に堆積される、請求項1から5のいずれか一項に記載の方法。
- 前記反応室のサイズは、前記鉛直に配置された前記基板のサイズまたは前記基板を担持する基板ホルダのサイズに合わせられる、請求項1から6のいずれか一項に記載の方法。
- 前記鉛直方向は上から下である、請求項1から7のいずれか一項に記載の方法。
- 前駆体蒸気は、前記少なくとも1つの供給管路に沿って鉛直方向に流れ、前記反応室の上部フランジに加工された流路を介して、下方向から前記二重蓋システムの前記反応室蓋へと流入する、請求項5に記載の方法。
- 真空室蓋及び該真空室蓋に一体化される反応室蓋を備える二重蓋システムと;
前記二重蓋システムの前記反応室蓋によって密閉されうる反応室と;
前記反応室を囲む真空室であって、前記二重蓋システムの前記真空室蓋によって密閉されうる真空室と;
前駆体蒸気を、前記二重蓋システムの前記反応室蓋を介して前記反応室に供給するように構成された少なくとも1つの供給管路と;
を備えるALD(原子層堆積)反応装置であって、前記反応室は、該反応室内に鉛直方向に立てて配された複数の基板の各々の表面に沿って、反応空間の上側から前記反応空間の底側まで前記表面に基本的に平行に流れるような、前駆体蒸気の鉛直方向の流れを作り出し、前記複数の基板同士の間に前記前駆体蒸気が入り込むようにすることにより、前記表面の各々に材料を堆積させるように構成される、装置。 - 前記鉛直に配された複数の基板は、基板ホルダ内に並行に配された1組のウェーハを含み、前記1組のウェーハは少なくとも2枚のウェーハを含む、請求項10に記載のALD反応装置。
- 前記反応室蓋は前記基板ホルダを取り付けうるように構成される、
請求項11に記載のALD反応装置。 - 前記前駆体蒸気を、前記反応室蓋を通じて容積拡張部に導き、さらに前記容積拡張部から分配板を通して鉛直方向に、前記基板を収容している前記反応室の部分に導くように構成される、請求項12に記載のALD反応装置。
- ALD法に従い、自己飽和表面反応を繰り返し生じさせることによって薄膜を基板表面に堆積させるように構成される、請求項10から13のいずれか一項に記載のALD反応装置。
- 前記反応室のサイズは、前記鉛直に配置された前記基板のサイズまたは前記基板を担持する基板ホルダのサイズに合わせられる、請求項10から14のいずれか一項に記載のALD反応装置。
- 前記鉛直方向は上から下である、請求項10から15のいずれか一項に記載のALD反応装置。
- 前記反応室は上部フランジを備え、
前駆体蒸気は、前記少なくとも1つの供給管路に沿って鉛直方向に流れ、前記上部フランジに加工された流路を介して、下方向から前記二重蓋システムの前記反応室蓋へと流入するようにされる、
請求項13に記載のALD反応装置。
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US12/154,879 | 2008-05-27 | ||
US12/154,879 US10041169B2 (en) | 2008-05-27 | 2008-05-27 | System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor |
PCT/FI2009/050432 WO2009144371A1 (en) | 2008-05-27 | 2009-05-25 | Methods and apparatus for deposition reactors |
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US (2) | US10041169B2 (ja) |
EP (1) | EP2286006B1 (ja) |
JP (1) | JP5646463B2 (ja) |
KR (1) | KR101642331B1 (ja) |
CN (1) | CN102046856B (ja) |
ES (1) | ES2587394T3 (ja) |
RU (1) | RU2502834C2 (ja) |
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US8282334B2 (en) | 2008-08-01 | 2012-10-09 | Picosun Oy | Atomic layer deposition apparatus and loading methods |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
TWI475129B (zh) * | 2010-12-15 | 2015-03-01 | Ncd Co Ltd | 薄膜沉積方法及其系統 |
JP5699980B2 (ja) * | 2011-06-16 | 2015-04-15 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
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US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
HUP1100436A2 (en) * | 2011-08-15 | 2013-02-28 | Ecosolifer Ag | Gas flow system for using in reaction chamber |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
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RU2502834C2 (ru) | 2013-12-27 |
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US10041169B2 (en) | 2018-08-07 |
CN102046856A (zh) | 2011-05-04 |
EP2286006A1 (en) | 2011-02-23 |
EP2286006A4 (en) | 2012-01-18 |
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CN102046856B (zh) | 2015-11-25 |
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US20180305813A1 (en) | 2018-10-25 |
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