RU2010150684A - Способ и устройство для реакторов осаждения - Google Patents
Способ и устройство для реакторов осаждения Download PDFInfo
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- RU2010150684A RU2010150684A RU2010150684/05A RU2010150684A RU2010150684A RU 2010150684 A RU2010150684 A RU 2010150684A RU 2010150684/05 A RU2010150684/05 A RU 2010150684/05A RU 2010150684 A RU2010150684 A RU 2010150684A RU 2010150684 A RU2010150684 A RU 2010150684A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
Abstract
1. Способ, в котором: ! вводят пары прекурсора по меньшей мере по одной подающей линии в реакционную камеру реактора осаждения и ! осаждают материал на поверхности партии вертикально расположенных подложек в реакционной камере посредством установления вертикального потока паров прекурсора в реакционной камере и введения его в вертикальном направлении в промежутки между указанными вертикально расположенными подложками таким образом, что пары прекурсора текут от верхней стороны реакционной зоны к нижней стороне реакционной зоны вдоль каждой из указанных поверхностей по существу в одном и том же параллельном вертикальном направлении. ! 2. Способ по п.1, отличающийся тем, что указанная партия вертикально расположенных подложек включает набор пластин, расположенных параллельно в держателе подложек, причем указанный набор пластин включает по меньшей мере две пластины. ! 3. Способ по п.2, отличающийся тем, что держатель подложек загружают в реакционную камеру и выгружают из реакционной камеры с верхней стороны реакционной камеры. ! 4. Способ по п.2, отличающийся тем, что держатель подложек закрепляют на подвижной крышке реакционной камеры. ! 5. Способ по п.1, отличающийся тем, что пары прекурсора подают в реакционную камеру через крышку реакционной камеры. ! 6. Способ по п.5, отличающийся тем, что пары прекурсора подают через крышку реакционной камеры в расширительный объем, а из этого расширительного объема в вертикальном направлении через распределительную пластину - в часть реакционной камеры, содержащую указанные подложки. ! 7. Способ по п.1, отличающийся тем, что на поверхностях подложек осаждают тонкую пленку пу�
Claims (17)
1. Способ, в котором:
вводят пары прекурсора по меньшей мере по одной подающей линии в реакционную камеру реактора осаждения и
осаждают материал на поверхности партии вертикально расположенных подложек в реакционной камере посредством установления вертикального потока паров прекурсора в реакционной камере и введения его в вертикальном направлении в промежутки между указанными вертикально расположенными подложками таким образом, что пары прекурсора текут от верхней стороны реакционной зоны к нижней стороне реакционной зоны вдоль каждой из указанных поверхностей по существу в одном и том же параллельном вертикальном направлении.
2. Способ по п.1, отличающийся тем, что указанная партия вертикально расположенных подложек включает набор пластин, расположенных параллельно в держателе подложек, причем указанный набор пластин включает по меньшей мере две пластины.
3. Способ по п.2, отличающийся тем, что держатель подложек загружают в реакционную камеру и выгружают из реакционной камеры с верхней стороны реакционной камеры.
4. Способ по п.2, отличающийся тем, что держатель подложек закрепляют на подвижной крышке реакционной камеры.
5. Способ по п.1, отличающийся тем, что пары прекурсора подают в реакционную камеру через крышку реакционной камеры.
6. Способ по п.5, отличающийся тем, что пары прекурсора подают через крышку реакционной камеры в расширительный объем, а из этого расширительного объема в вертикальном направлении через распределительную пластину - в часть реакционной камеры, содержащую указанные подложки.
7. Способ по п.1, отличающийся тем, что на поверхностях подложек осаждают тонкую пленку путем осуществления последовательных самонасыщающих поверхностных реакций.
8. Способ по п.1, отличающийся тем, что размер реакционной камеры специально оптимизирован под размер партии вертикально расположенных подложек или под размер держателя подложек, несущего указанные подложки.
9. Способ по п.1, отличающийся тем, что направление указанного вертикального потока является направлением сверху вниз.
10. Устройство, содержащее:
по меньшей мере одну подающую линию, выполненную с возможностью подачи паров прекурсора в реакционную камеру реактора осаждения, где
указанная реакционная камера выполнена с возможностью осаждения материала на поверхности партии вертикально расположенных подложек в реакционной камере посредством установления вертикального потока паров прекурсора в реакционной камере и введения его в вертикальном направлении в промежутки между указанными вертикально расположенными подложками таким образом, что пары прекурсора текут от верхней стороны реакционной зоны к нижней стороне реакционной зоны вдоль каждой из указанных поверхностей по существу в одном и том же параллельном вертикальном направлении.
11. Устройство по п.10, отличающееся тем, что указанная партия вертикально расположенных подложек включает набор пластин, расположенных параллельно в держателе подложек, причем указанный набор пластин включает по меньшей мере две пластины.
12. Устройство по п.11, включающее
крышку реакционной камеры, выполненную с возможностью крепления указанного держателя подложек.
13. Устройство по п.10, включающее
крышку реакционной камеры, причем устройство выполнено с возможностью подачи указанных паров прекурсора в реакционную камеру через указанную крышку реакционной камеры.
14. Устройство по п.13, отличающееся тем, что устройство выполнено с возможностью подачи указанных паров прекурсора через крышку реакционной камеры в расширительный объем, а из этого расширительного объема в вертикальном направлении через распределительную пластину - в часть реакционной камеры, содержащую указанные подложки.
15. Устройство по п.10, отличающееся тем, что устройство выполнено с возможностью осаждения тонкой пленки на поверхностях подложек путем осуществления последовательных самонасыщающих поверхностных реакций.
16. Устройство по п.10, отличающееся тем, что размер реакционной камеры специально оптимизирован под размер партии вертикально расположенных подложек или под размер держателя подложек, несущего указанные подложки.
17. Устройство по п.10, отличающееся тем, что направление указанного вертикального потока является направлением сверху вниз.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/154,879 | 2008-05-27 | ||
| US12/154,879 US10041169B2 (en) | 2008-05-27 | 2008-05-27 | System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor |
| PCT/FI2009/050432 WO2009144371A1 (en) | 2008-05-27 | 2009-05-25 | Methods and apparatus for deposition reactors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2010150684A true RU2010150684A (ru) | 2012-07-10 |
| RU2502834C2 RU2502834C2 (ru) | 2013-12-27 |
Family
ID=41376638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2010150684/05A RU2502834C2 (ru) | 2008-05-27 | 2009-05-25 | Способ и устройство для реакторов осаждения |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US10041169B2 (ru) |
| EP (1) | EP2286006B1 (ru) |
| JP (1) | JP5646463B2 (ru) |
| KR (1) | KR101642331B1 (ru) |
| CN (1) | CN102046856B (ru) |
| ES (1) | ES2587394T3 (ru) |
| RU (1) | RU2502834C2 (ru) |
| WO (1) | WO2009144371A1 (ru) |
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-
2008
- 2008-05-27 US US12/154,879 patent/US10041169B2/en active Active
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2009
- 2009-05-25 EP EP09754024.9A patent/EP2286006B1/en active Active
- 2009-05-25 RU RU2010150684/05A patent/RU2502834C2/ru active
- 2009-05-25 CN CN200980119508.0A patent/CN102046856B/zh active Active
- 2009-05-25 JP JP2011511043A patent/JP5646463B2/ja active Active
- 2009-05-25 KR KR1020107029306A patent/KR101642331B1/ko active IP Right Grant
- 2009-05-25 ES ES09754024.9T patent/ES2587394T3/es active Active
- 2009-05-25 WO PCT/FI2009/050432 patent/WO2009144371A1/en active Application Filing
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Also Published As
| Publication number | Publication date |
|---|---|
| KR101642331B1 (ko) | 2016-07-29 |
| US20090297710A1 (en) | 2009-12-03 |
| WO2009144371A1 (en) | 2009-12-03 |
| JP5646463B2 (ja) | 2014-12-24 |
| RU2502834C2 (ru) | 2013-12-27 |
| KR20110031431A (ko) | 2011-03-28 |
| US10041169B2 (en) | 2018-08-07 |
| CN102046856A (zh) | 2011-05-04 |
| EP2286006A1 (en) | 2011-02-23 |
| EP2286006A4 (en) | 2012-01-18 |
| JP2011523444A (ja) | 2011-08-11 |
| ES2587394T3 (es) | 2016-10-24 |
| CN102046856B (zh) | 2015-11-25 |
| EP2286006B1 (en) | 2016-05-18 |
| US20180305813A1 (en) | 2018-10-25 |
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