JP2845163B2 - プラズマ処理方法及びその装置 - Google Patents
プラズマ処理方法及びその装置Info
- Publication number
- JP2845163B2 JP2845163B2 JP7115655A JP11565595A JP2845163B2 JP 2845163 B2 JP2845163 B2 JP 2845163B2 JP 7115655 A JP7115655 A JP 7115655A JP 11565595 A JP11565595 A JP 11565595A JP 2845163 B2 JP2845163 B2 JP 2845163B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- electric field
- pulse
- substrate
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003672 processing method Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 39
- 150000002500 ions Chemical class 0.000 claims description 35
- 230000005684 electric field Effects 0.000 claims description 25
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000005530 etching Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 9
- 238000009825 accumulation Methods 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【０００１】
【産業上の利用分野】本発明は、表面処理に関し、特に
高周波電界を利用して生成したプラズマを用いて基板表
面の処理を行うプラズマ処理装置に関するものである。
高周波電界を利用して生成したプラズマを用いて基板表
面の処理を行うプラズマ処理装置に関するものである。
【０００２】
【従来の技術】従来、この種のマイクロ波プラズマエッ
チング装置として、図７（Ａ）に示すものがある。例え
ば特開昭５６−１５５５３５号公報、特開昭６０−１３
４４２３号公報参照。この装置はマイクロ波６０８によ
る電子サイクロトロン共鳴放電中にエッチング試料６１
４をセットし、該試料に８００ｋＨｚ〜１３．５６ＭＨ
ｚの基板バイアスを印加してエッチング処理を行うもの
である。図７（Ｂ）はこのときのＲＦ電圧と電子および
イオン入射領域を示す図である。特開平４−１０３７８
３号公報には、高速・異方性エッチングを行いかつエッ
チング速度を均一にするために基板の処理をＥＣＲ共鳴
光で行いかつ基板バイアス電圧に１００〜６００ｋＨｚ
の高周波を印加してエッチングするためのＥＳＲプラズ
マエッチング装置が記載されている。
チング装置として、図７（Ａ）に示すものがある。例え
ば特開昭５６−１５５５３５号公報、特開昭６０−１３
４４２３号公報参照。この装置はマイクロ波６０８によ
る電子サイクロトロン共鳴放電中にエッチング試料６１
４をセットし、該試料に８００ｋＨｚ〜１３．５６ＭＨ
ｚの基板バイアスを印加してエッチング処理を行うもの
である。図７（Ｂ）はこのときのＲＦ電圧と電子および
イオン入射領域を示す図である。特開平４−１０３７８
３号公報には、高速・異方性エッチングを行いかつエッ
チング速度を均一にするために基板の処理をＥＣＲ共鳴
光で行いかつ基板バイアス電圧に１００〜６００ｋＨｚ
の高周波を印加してエッチングするためのＥＳＲプラズ
マエッチング装置が記載されている。
【０００３】
【発明が解決しようとする課題】しかし、上述した従来
の技術においては基板表面への電荷蓄積が生じ、高速性
・異方性とダメージの抑制の両立が難しいという問題点
がある。
の技術においては基板表面への電荷蓄積が生じ、高速性
・異方性とダメージの抑制の両立が難しいという問題点
がある。
【０００４】本発明は、このような従来の問題点を解決
するためになされたものである。パルス変調プラズマを
用いることでプラズマ中の負イオン密度を増加させ、か
つイオンが追従できる低周波数バイアスを印加すること
で、基板に交互に正イオンと負イオンを入射させること
で電荷蓄積を抑制すると共により一層の高速・異方性エ
ッチングを両立できることを目的とする。
するためになされたものである。パルス変調プラズマを
用いることでプラズマ中の負イオン密度を増加させ、か
つイオンが追従できる低周波数バイアスを印加すること
で、基板に交互に正イオンと負イオンを入射させること
で電荷蓄積を抑制すると共により一層の高速・異方性エ
ッチングを両立できることを目的とする。
【０００５】
【課題を解決するための手段】本発明は、パルス停止時
間を１０〜１００μ秒の範囲としてプラズマ生成用高周
波をパルス変調し、かつ該プラズマ中に設置した基板に
６００ｋＨｚ以下のバイアスを印加し、該ＲＦ電界は放
電用高周波電界のパルス変調に同期させて、かつ、放電
用高周波電界のパルス停止時のみに印加することを特徴
とするプラズマ処理方法とその装置である。
間を１０〜１００μ秒の範囲としてプラズマ生成用高周
波をパルス変調し、かつ該プラズマ中に設置した基板に
６００ｋＨｚ以下のバイアスを印加し、該ＲＦ電界は放
電用高周波電界のパルス変調に同期させて、かつ、放電
用高周波電界のパルス停止時のみに印加することを特徴
とするプラズマ処理方法とその装置である。
【０００６】
【作用】本発明では、パルス停止時間を１０〜１００μ
秒に設定してプラズマをパルス変調することにより、プ
ラズマ中の負イオンを連続放電に比べ圧倒的に増加させ
ることができる。これは、負イオンがアフターグロー中
で効率よく生成され、その生成時間が１０〜１００μ秒
程度であることによる。この時、６００ｋＨｚ以下のＲ
Ｆ電界を該プラズマに印加すると図１（Ｂ）に示すよう
に質量の重い正・負イオンがＲＦ電界に追従して基板に
加速され半周期ずつ交互に入射することになる。これに
より、基板表面での電荷蓄積は抑制され、また、正イオ
ンばかりでなく加速されて入射した負イオンによっても
エッチングが進むので、エッチング速度の上昇が期待で
きる。また、磁場を用いたプラズマで顕著に表れる電子
とイオンの運動の違いから生じるダメージや異常エッチ
ングを抑制することができる。
秒に設定してプラズマをパルス変調することにより、プ
ラズマ中の負イオンを連続放電に比べ圧倒的に増加させ
ることができる。これは、負イオンがアフターグロー中
で効率よく生成され、その生成時間が１０〜１００μ秒
程度であることによる。この時、６００ｋＨｚ以下のＲ
Ｆ電界を該プラズマに印加すると図１（Ｂ）に示すよう
に質量の重い正・負イオンがＲＦ電界に追従して基板に
加速され半周期ずつ交互に入射することになる。これに
より、基板表面での電荷蓄積は抑制され、また、正イオ
ンばかりでなく加速されて入射した負イオンによっても
エッチングが進むので、エッチング速度の上昇が期待で
きる。また、磁場を用いたプラズマで顕著に表れる電子
とイオンの運動の違いから生じるダメージや異常エッチ
ングを抑制することができる。
【０００７】このようにして表面での電荷蓄積によるデ
バイスへのダメージを抑制できるとともに、高速かつ異
方性エッチングを両立して行うことができる。
バイスへのダメージを抑制できるとともに、高速かつ異
方性エッチングを両立して行うことができる。
【０００８】
【実施例】図１（Ａ）は本発明を説明するための装置の
第一の実施例である。本装置は、マイクロ波電界とコイ
ル６による磁界によりプラズマ７を生成するプラズマ生
成室１と基板搬送室とが互いに隣接するように構成され
ている。このプラズマ生成室にはプラズマを生成するた
めのガスを導入するガス系が接続されるとともに、２．
４５ＧＨｚ程度のマイクロ波を導入する導波管２が設置
されている。マイクロ波電源３からの導入マイクロ波は
パルス回路４とファンクションジェネレータ５により１
０〜５０μ秒にパルス変調され、プラズマ生成室に設置
された基板ホルダ部８の基板９には４００ｋＨｚのバイ
アスが印加されている。図１（Ｂ）はＲＦ電圧とイオン
及び電子の入射の関係を示す図である。
第一の実施例である。本装置は、マイクロ波電界とコイ
ル６による磁界によりプラズマ７を生成するプラズマ生
成室１と基板搬送室とが互いに隣接するように構成され
ている。このプラズマ生成室にはプラズマを生成するた
めのガスを導入するガス系が接続されるとともに、２．
４５ＧＨｚ程度のマイクロ波を導入する導波管２が設置
されている。マイクロ波電源３からの導入マイクロ波は
パルス回路４とファンクションジェネレータ５により１
０〜５０μ秒にパルス変調され、プラズマ生成室に設置
された基板ホルダ部８の基板９には４００ｋＨｚのバイ
アスが印加されている。図１（Ｂ）はＲＦ電圧とイオン
及び電子の入射の関係を示す図である。
【０００９】図２は酸素プラズマにおけるアフターグロ
ープラズマ中の負イオン生成量の時間変位を示す。ＲＦ
パワー０．９０ｋＷ、酸素圧０．４７Ｐａの条件で負イ
オンはパワーＯＦＦ（Ｔ＝１５．０ｍｓｅｃの時点）後
数μ秒程度から生成し、３０μ秒程度で最大値をもつ。
このことから、１０〜５０μ秒のパルス変調プラズマに
より負イオン生成が効率よくなされることがわかる。
ープラズマ中の負イオン生成量の時間変位を示す。ＲＦ
パワー０．９０ｋＷ、酸素圧０．４７Ｐａの条件で負イ
オンはパワーＯＦＦ（Ｔ＝１５．０ｍｓｅｃの時点）後
数μ秒程度から生成し、３０μ秒程度で最大値をもつ。
このことから、１０〜５０μ秒のパルス変調プラズマに
より負イオン生成が効率よくなされることがわかる。
【００１０】図３は窒素プラズマ中に設置された基板に
印加する高周波周波数と基板上に生成されるバイアス電
圧（基板シース電圧）の関係を示す。６００ｋＨｚ以下
の周波数になると基板上にバイアス電圧が生じなくなる
ことがわかる。これは、正イオンがバイアス周波数に追
従しイオンと電子が基板に交互に入射するためである。
すなわち、イオンが周波数に追従できるのは６００ｋＨ
ｚ以下の周波数であることがわかる。
印加する高周波周波数と基板上に生成されるバイアス電
圧（基板シース電圧）の関係を示す。６００ｋＨｚ以下
の周波数になると基板上にバイアス電圧が生じなくなる
ことがわかる。これは、正イオンがバイアス周波数に追
従しイオンと電子が基板に交互に入射するためである。
すなわち、イオンが周波数に追従できるのは６００ｋＨ
ｚ以下の周波数であることがわかる。
【００１１】この実施例から１０〜５０μ秒のパルス変
調プラズマにより正・負イオンを効率よく生成し、その
正負イオンを６００ｋＨｚ以下の低周波バイアスにより
基板に効率よく交互に入射させることが可能となる。
調プラズマにより正・負イオンを効率よく生成し、その
正負イオンを６００ｋＨｚ以下の低周波バイアスにより
基板に効率よく交互に入射させることが可能となる。
【００１２】また、本発明は放電周波数に依存すること
なく適用でき、さらに、基板バイアスもパルス変調する
ことで基板に入射するバイアス電圧を時間制御でき、よ
り高精度なエッチングが実現できる。
なく適用でき、さらに、基板バイアスもパルス変調する
ことで基板に入射するバイアス電圧を時間制御でき、よ
り高精度なエッチングが実現できる。
【００１３】第二の実施例について説明する。図４に塩
素プラズマ中のアフターグロー中に発生する負イオンの
時間変位を示す。パルスＯＦＦ時間が１００μ秒程度ま
で負イオンが生成していることがわかる。
素プラズマ中のアフターグロー中に発生する負イオンの
時間変位を示す。パルスＯＦＦ時間が１００μ秒程度ま
で負イオンが生成していることがわかる。
【００１４】この時、６００ｋＨｚのＲＦバイアスを基
板に印加した場合のポリシリコンエッチング速度及び均
一性を図５に示す。放電停止時間が１００μ秒程度まで
長くなるにつれてエッチング速度が上昇し、エッチング
均一性が改善されることがわかる。これは、放電停止時
に発生する負イオンによってプラズマポテンシャルが均
一化され、かつ、負イオンが基板に入射してエッチング
に寄与するためである。このことから、１００μ秒程度
の放電停止時間が有効であることがわかった。
板に印加した場合のポリシリコンエッチング速度及び均
一性を図５に示す。放電停止時間が１００μ秒程度まで
長くなるにつれてエッチング速度が上昇し、エッチング
均一性が改善されることがわかる。これは、放電停止時
に発生する負イオンによってプラズマポテンシャルが均
一化され、かつ、負イオンが基板に入射してエッチング
に寄与するためである。このことから、１００μ秒程度
の放電停止時間が有効であることがわかった。
【００１５】図６はマイクロ波、イオン密度、基板バイ
アスを示す図であり、この図６に示す実施例は、パルス
放電における放電停止時間を９０％以上とし、多量の負
イオンと正イオンが存在する放電停止中のみに６００ｋ
Ｈｚの低周波ＲＦバイアスを印加することで正負イオン
のみでエッチングを行う例である。例えば、ＥＣＲプラ
ズマ等では１０μ秒程度の放電時間中に十分な密度の正
イオンが生成されるため、その後１００μ秒の放電停止
を行うことで多量の正負イオンが生成される。この時、
６００ｋＨｚのＲＦ電界を放電ＯＦＦ時のみに印加する
ようにすれば、基板には移動度の同じ正負イオンのみ入
射し、従来の電子及びイオンの移動度の違いによって発
生する電荷蓄積（チャージング）を抑制することが可能
である。この実施例から放電用高周波電界は１０〜１０
０μ秒の範囲のパルス変調がよいことがわかる。
アスを示す図であり、この図６に示す実施例は、パルス
放電における放電停止時間を９０％以上とし、多量の負
イオンと正イオンが存在する放電停止中のみに６００ｋ
Ｈｚの低周波ＲＦバイアスを印加することで正負イオン
のみでエッチングを行う例である。例えば、ＥＣＲプラ
ズマ等では１０μ秒程度の放電時間中に十分な密度の正
イオンが生成されるため、その後１００μ秒の放電停止
を行うことで多量の正負イオンが生成される。この時、
６００ｋＨｚのＲＦ電界を放電ＯＦＦ時のみに印加する
ようにすれば、基板には移動度の同じ正負イオンのみ入
射し、従来の電子及びイオンの移動度の違いによって発
生する電荷蓄積（チャージング）を抑制することが可能
である。この実施例から放電用高周波電界は１０〜１０
０μ秒の範囲のパルス変調がよいことがわかる。
【００１６】
【発明の効果】以上説明したように、本発明のプラズマ
処理方法によれば、電荷蓄積の無い高速・高選択・異方
性エッチングが実現できる。
処理方法によれば、電荷蓄積の無い高速・高選択・異方
性エッチングが実現できる。
【図１】本発明を説明するための図。
【図２】アフターグロープラズマ中の負イオンの生成の
時間変位を示す図。
時間変位を示す図。
【図３】基板バイアス周波数と基板シース電圧（セルフ
バイアス電圧）の関係を示す図。
バイアス電圧）の関係を示す図。
【図４】本発明を説明するための図。
【図５】本発明を説明するための図。
【図６】本発明を説明するための図。
【図７】従来例によるプラズマエッチング装置を説明す
るための図。
るための図。
１ プラズマチャンバ（生成管） ２ 導波管 ３ マイクロ波電源 ４ パルス回路 ５ ファンクションジェネレータ ６ コイル ７ プラズマ ８ 基板電極 ９ 基板 ６０１ プラズマ生成室 ６０２ 反応室 ６０３ ソレノイドコイル ６０４ プラズマ引き出し窓 ６０５ 導波管 ６０７ ガス導入口 ６０８ マイクロ波 ６０９ プラズマ ６１０ 基板ホルダ ６１４ エッチング材料（基板）
Claims (4)
- 【請求項１】 プラズマ生成室内で高周波によって発生
する電場を利用して処理ガスをプラズマ化し、該プラズ
マを基板に照射して基板処理を行うプラズマ処理方法に
おいて、パルス停止時間を１０〜１００μ秒の範囲とし
て放電用高周波電界をパルス変調するとともに、該プラ
ズマ中に設置された基板電極へ６００ｋＨｚ以下のＲＦ
電界を印加し、該ＲＦ電界は放電用高周波電界のパルス
変調に同期させて、かつ、放電用高周波電界のパルス停
止時のみに印加することを特徴とするプラズマ処理方
法。 - 【請求項２】 プラズマ生成室内で高周波によって発生
する電場を利用して処理ガスをプラズマ化し、該プラズ
マを基板に照射して基板処理を行うプラズマ処理方法に
おいて、パルス停止時間を１０〜１００μ秒の範囲とし
て放電用高周波電界をパルス変調することにより該パル
ス停止時間中のプラズマのアフターグローにおいて負イ
オンを生成し、かつ該プラズマ中に設置された基板電極
へ６００ｋＨｚ以下のＲＦ電界を印加し、該ＲＦ電界は
放電用高周波電界のパルス変調に同期させて、かつ、放
電用高周波電界のパルス停止時のみに印加することによ
りプラズマ中の正及び負のイオンを該ＲＦ電界の半周期
ずつ交互に基板に入射させることを特徴とするプラズマ
処理方法。 - 【請求項３】 放電用高周波電界のパルス変調デューテ
ィ比を１０％以下とすることを特徴とする請求項１また
は請求項２に記載のプラズマ処理方法。 - 【請求項４】 プラズマ生成室内に高周波を発生するた
めの電源と、磁場をかける手段と、前記高周波を１０〜
１００μ秒の範囲にパルス停止時間を設定してパルス変
調するためのパルス回路と、プラズマ生成室内の基板電
極に６００ｋＨｚ以下のＲＦ電界を印加するＲＦ電源
と、前記ＲＦ電界を放電用高周波電界のパルス変調にお
けるパルス停止時間のみに基板に印加する同期手段を有
することを特徴とするプラズマ処理装置。
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|---|---|---|---|
| JP7115655A JP2845163B2 (ja) | 1994-10-27 | 1995-05-15 | プラズマ処理方法及びその装置 |
| US08/548,730 US5827435A (en) | 1994-10-27 | 1995-10-26 | Plasma processing method and equipment used therefor |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26376394 | 1994-10-27 | ||
| JP6-263763 | 1994-10-27 | ||
| JP7115655A JP2845163B2 (ja) | 1994-10-27 | 1995-05-15 | プラズマ処理方法及びその装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10088491A Division JPH10284297A (ja) | 1998-04-01 | 1998-04-01 | プラズマ処理方法及びその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
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| JP2845163B2 true JP2845163B2 (ja) | 1999-01-13 |
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ID=26454133
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|---|---|---|---|
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| Country | Link |
|---|---|
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| JP (1) | JP2845163B2 (ja) |
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| US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
| US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
| US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
| US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
| US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US11001925B2 (en) | 2016-12-19 | 2021-05-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
| US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
| US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
Families Citing this family (239)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6200651B1 (en) * | 1997-06-30 | 2001-03-13 | Lam Research Corporation | Method of chemical vapor deposition in a vacuum plasma processor responsive to a pulsed microwave source |
| JPH1180975A (ja) | 1997-09-04 | 1999-03-26 | Speedfam Co Ltd | プラズマエッチング装置の耐食システム及びその方法 |
| EP0989595A3 (en) * | 1998-09-18 | 2001-09-19 | Ims-Ionen Mikrofabrikations Systeme Gmbh | Device for processing a surface of a substrate |
| JP2000100790A (ja) | 1998-09-22 | 2000-04-07 | Canon Inc | プラズマ処理装置及びそれを用いた処理方法 |
| US6217704B1 (en) | 1998-09-22 | 2001-04-17 | Canon Kabushiki Kaisha | Plasma processing apparatus |
| US6511575B1 (en) | 1998-11-12 | 2003-01-28 | Canon Kabushiki Kaisha | Treatment apparatus and method utilizing negative hydrogen ion |
| US6635577B1 (en) | 1999-03-30 | 2003-10-21 | Applied Materials, Inc | Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system |
| SG93862A1 (en) * | 1999-03-30 | 2003-01-21 | Applied Materials Inc | Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system |
| JP3533105B2 (ja) | 1999-04-07 | 2004-05-31 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法と製造装置 |
| US6319355B1 (en) * | 1999-06-30 | 2001-11-20 | Lam Research Corporation | Plasma processor with coil responsive to variable amplitude rf envelope |
| US6566272B2 (en) | 1999-07-23 | 2003-05-20 | Applied Materials Inc. | Method for providing pulsed plasma during a portion of a semiconductor wafer process |
| US6299741B1 (en) | 1999-11-29 | 2001-10-09 | Applied Materials, Inc. | Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus |
| US6379223B1 (en) | 1999-11-29 | 2002-04-30 | Applied Materials, Inc. | Method and apparatus for electrochemical-mechanical planarization |
| JP2001168086A (ja) | 1999-12-09 | 2001-06-22 | Kawasaki Steel Corp | 半導体装置の製造方法および製造装置 |
| GB2360530A (en) * | 2000-03-25 | 2001-09-26 | Plasma Quest Ltd | High target utilisation sputtering system with remote plasma source |
| US6875700B2 (en) * | 2000-08-29 | 2005-04-05 | Board Of Regents, The University Of Texas System | Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges |
| US6777037B2 (en) * | 2001-02-21 | 2004-08-17 | Hitachi, Ltd. | Plasma processing method and apparatus |
| JP2002289584A (ja) * | 2001-03-26 | 2002-10-04 | Ebara Corp | 表面処理方法 |
| DE10309711A1 (de) * | 2001-09-14 | 2004-09-16 | Robert Bosch Gmbh | Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma |
| US20030201185A1 (en) * | 2002-04-29 | 2003-10-30 | Applied Materials, Inc. | In-situ pre-clean for electroplating process |
| US20030209523A1 (en) * | 2002-05-09 | 2003-11-13 | Applied Materials, Inc. | Planarization by chemical polishing for ULSI applications |
| US7189313B2 (en) * | 2002-05-09 | 2007-03-13 | Applied Materials, Inc. | Substrate support with fluid retention band |
| US20040112735A1 (en) * | 2002-12-17 | 2004-06-17 | Applied Materials, Inc. | Pulsed magnetron for sputter deposition |
| US20040132311A1 (en) * | 2003-01-06 | 2004-07-08 | Applied Materials, Inc. | Method of etching high-K dielectric materials |
| US6942813B2 (en) * | 2003-03-05 | 2005-09-13 | Applied Materials, Inc. | Method of etching magnetic and ferroelectric materials using a pulsed bias source |
| JP2004281230A (ja) * | 2003-03-14 | 2004-10-07 | Ebara Corp | ビーム源及びビーム処理装置 |
| JP2004281232A (ja) * | 2003-03-14 | 2004-10-07 | Ebara Corp | ビーム源及びビーム処理装置 |
| WO2004112120A1 (ja) * | 2003-06-10 | 2004-12-23 | Sumitomo Precision Products Co., Ltd. | シリコン基板のエッチング方法 |
| DE102004043233B4 (de) | 2003-09-10 | 2014-02-13 | Denso Corporation | Verfahren zum Herstellen eines beweglichen Abschnitts einer Halbleitervorrichtung |
| US7464271B2 (en) * | 2004-10-04 | 2008-12-09 | Sony Corporation | Systems and methods of providing content protection for digital video products |
| US7141514B2 (en) * | 2005-02-02 | 2006-11-28 | Applied Materials, Inc. | Selective plasma re-oxidation process using pulsed RF source power |
| US7214628B2 (en) | 2005-02-02 | 2007-05-08 | Applied Materials, Inc. | Plasma gate oxidation process using pulsed RF source power |
| KR100766093B1 (ko) | 2005-07-13 | 2007-10-11 | 삼성전자주식회사 | 플라즈마를 분리 가속시키는 중성 빔 에칭 장치 |
| US7570028B2 (en) * | 2007-04-26 | 2009-08-04 | Advanced Energy Industries, Inc. | Method and apparatus for modifying interactions between an electrical generator and a nonlinear load |
| US8043434B2 (en) * | 2008-10-23 | 2011-10-25 | Lam Research Corporation | Method and apparatus for removing photoresist |
| US8716984B2 (en) | 2009-06-29 | 2014-05-06 | Advanced Energy Industries, Inc. | Method and apparatus for modifying the sensitivity of an electrical generator to a nonlinear load |
| US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
| TWI581304B (zh) | 2011-07-27 | 2017-05-01 | 日立全球先端科技股份有限公司 | Plasma etching apparatus and dry etching method |
| US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
| US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
| US20140360670A1 (en) * | 2013-06-05 | 2014-12-11 | Tokyo Electron Limited | Processing system for non-ambipolar electron plasma (nep) treatment of a substrate with sheath potential |
| CN103397304B (zh) * | 2013-08-21 | 2015-05-27 | 南京浩穰环保科技有限公司 | 微弧离子镀方法 |
| KR102357845B1 (ko) * | 2013-12-02 | 2022-01-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 프로세스 챔버의 인-시츄 세정을 위한 방법들 및 장치 |
| US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
| US10388509B2 (en) | 2016-06-28 | 2019-08-20 | Asm Ip Holding B.V. | Formation of epitaxial layers via dislocation filtering |
| KR102613349B1 (ko) | 2016-08-25 | 2023-12-14 | 에이에스엠 아이피 홀딩 비.브이. | 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법 |
| KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
| US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
| US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
| KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR102401446B1 (ko) | 2017-08-31 | 2022-05-24 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
| US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| KR102443047B1 (ko) | 2017-11-16 | 2022-09-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 방법 및 그에 의해 제조된 장치 |
| US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
| KR102597978B1 (ko) | 2017-11-27 | 2023-11-06 | 에이에스엠 아이피 홀딩 비.브이. | 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치 |
| CN111344522B (zh) | 2017-11-27 | 2022-04-12 | 阿斯莫Ip控股公司 | 包括洁净迷你环境的装置 |
| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Ａｓｍ 智慧財產控股公司 | 沈積方法 |
| KR20200108016A (ko) | 2018-01-19 | 2020-09-16 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
| US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
| CN111699278B (zh) | 2018-02-14 | 2023-05-16 | Asm Ip私人控股有限公司 | 通过循环沉积工艺在衬底上沉积含钌膜的方法 |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11404245B2 (en) | 2018-02-28 | 2022-08-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | DC bias in plasma process |
| US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
| KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
| KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
| TWI811348B (zh) | 2018-05-08 | 2023-08-11 | 荷蘭商Ａｓｍ 智慧財產控股公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
| TW202349473A (zh) | 2018-05-11 | 2023-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
| KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
| US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
| KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| TWI815915B (zh) | 2018-06-27 | 2023-09-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法 |
| CN112292478A (zh) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | 用于形成含金属的材料的循环沉积方法及包含含金属的材料的膜和结构 |
| KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
| US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
| US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
| US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
| CN110896019A (zh) * | 2018-09-12 | 2020-03-20 | 北京北方华创微电子装备有限公司 | 等离子体刻蚀设备及刻蚀方法 |
| US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
| CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
| US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
| US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
| KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
| US10381219B1 (en) | 2018-10-25 | 2019-08-13 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film |
| US12014901B2 (en) | 2018-10-25 | 2024-06-18 | Tokyo Electron Limited | Tailored electron energy distribution function by new plasma source: hybrid electron beam and RF plasma |
| US11205562B2 (en) | 2018-10-25 | 2021-12-21 | Tokyo Electron Limited | Hybrid electron beam and RF plasma system for controlled content of radicals and ions |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US10559458B1 (en) | 2018-11-26 | 2020-02-11 | Asm Ip Holding B.V. | Method of forming oxynitride film |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| TW202037745A (zh) | 2018-12-14 | 2020-10-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
| TW202405220A (zh) | 2019-01-17 | 2024-02-01 | 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
| KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
| JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
| KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
| KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
| CN111593319B (zh) | 2019-02-20 | 2023-05-30 | Asm Ip私人控股有限公司 | 用于填充在衬底表面内形成的凹部的循环沉积方法和设备 |
| JP2020133004A (ja) | 2019-02-22 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材を処理するための基材処理装置および方法 |
| KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
| KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
| KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
| US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
| KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
| KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
| KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
| JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー．ブイ． | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| JP2020188254A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー．ブイ． | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
| USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
| KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
| KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
| KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
| JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
| CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
| KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
| KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| CN112242296A (zh) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
| TW202113936A (zh) | 2019-07-29 | 2021-04-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
| CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
| CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー．ブイ． | 成膜原料混合ガス生成装置及び成膜装置 |
| KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
| KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
| CN112635282A (zh) | 2019-10-08 | 2021-04-09 | Asm Ip私人控股有限公司 | 具有连接板的基板处理装置、基板处理方法 |
| KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
| KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
| KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
| US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
| CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
| CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
| JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー．ブイ． | 基板処理装置、基板処理方法 |
| KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| TW202140135A (zh) | 2020-01-06 | 2021-11-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 氣體供應總成以及閥板總成 |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| TW202129068A (zh) | 2020-01-20 | 2021-08-01 | 荷蘭商Ａｓｍ Ｉｐ控股公司 | 形成薄膜之方法及修飾薄膜表面之方法 |
| TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
| TW202146882A (zh) | 2020-02-04 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統 |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| TW202146715A (zh) | 2020-02-17 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於生長磷摻雜矽層之方法及其系統 |
| TW202203344A (zh) | 2020-02-28 | 2022-01-16 | 荷蘭商Ａｓｍ Ｉｐ控股公司 | 專用於零件清潔的系統 |
| KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
| KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
| CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
| KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
| TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
| TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
| TW202140831A (zh) | 2020-04-24 | 2021-11-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 形成含氮化釩層及包含該層的結構之方法 |
| TW202146831A (zh) | 2020-04-24 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法 |
| KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
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Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
| JPS56155535A (en) * | 1980-05-02 | 1981-12-01 | Nippon Telegr & Teleph Corp <Ntt> | Film forming device utilizing plasma |
| JPS6113625A (ja) * | 1984-06-29 | 1986-01-21 | Hitachi Ltd | プラズマ処理装置 |
| JPH0693447B2 (ja) * | 1983-12-23 | 1994-11-16 | 株式会社日立製作所 | マイクロ波プラズマ処理装置 |
| JP2598274B2 (ja) * | 1987-09-14 | 1997-04-09 | 三菱電機株式会社 | プラズマ応用装置 |
| JPH0766918B2 (ja) * | 1987-11-25 | 1995-07-19 | 富士電機株式会社 | プラズマ処理装置 |
| GB2212974B (en) * | 1987-11-25 | 1992-02-12 | Fuji Electric Co Ltd | Plasma processing apparatus |
| DE69017744T2 (de) * | 1989-04-27 | 1995-09-14 | Fuji Electric Co Ltd | Gerät und Verfahren zur Bearbeitung einer Halbleitervorrichtung unter Verwendung eines durch Mikrowellen erzeugten Plasmas. |
| JP2687966B2 (ja) * | 1990-08-20 | 1997-12-08 | 富士通株式会社 | 半導体装置の製造方法 |
| JP3071450B2 (ja) * | 1990-08-22 | 2000-07-31 | 日本電気株式会社 | マイクロ波プラズマ処理装置 |
| JPH04232261A (ja) * | 1990-12-28 | 1992-08-20 | Shimadzu Corp | 薄膜形成装置 |
| JP2957403B2 (ja) * | 1993-01-18 | 1999-10-04 | 日本電気株式会社 | プラズマエッチング方法とその装置 |
| JP3026704B2 (ja) * | 1993-07-29 | 2000-03-27 | 富士通株式会社 | マグネトロン発振出力制御装置及びプラズマ処理方法 |
| US5468341A (en) * | 1993-12-28 | 1995-11-21 | Nec Corporation | Plasma-etching method and apparatus therefor |
-
1995
- 1995-05-15 JP JP7115655A patent/JP2845163B2/ja not_active Expired - Fee Related
- 1995-10-26 US US08/548,730 patent/US5827435A/en not_active Expired - Lifetime
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| Publication number | Publication date |
|---|---|
| JPH08181125A (ja) | 1996-07-12 |
| US5827435A (en) | 1998-10-27 |
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