JPH08181125A - プラズマ処理方法及びその装置 - Google Patents

プラズマ処理方法及びその装置

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Publication number
JPH08181125A
JPH08181125A JP7115655A JP11565595A JPH08181125A JP H08181125 A JPH08181125 A JP H08181125A JP 7115655 A JP7115655 A JP 7115655A JP 11565595 A JP11565595 A JP 11565595A JP H08181125 A JPH08181125 A JP H08181125A
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Prior art keywords
plasma
substrate
electric field
chamber
pulse
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JP2845163B2 (ja
Inventor
Seiji Sagawa
誠二 寒川
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NEC Corp
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NEC Corp
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Priority to US08/548,730 priority patent/US5827435A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

(57)【要約】 【目的】 基板表面への電荷蓄積によるデバイスへのダ
メージを抑制し、かつ高速・異方性エッチングを両立し
て行うプラズマ処理方法を提供する。 【構成】 放電用の高周波電界を１０〜１００μ秒でパ
ルス変調してプラズマを生成し、プラズマ中の基板電極
へ６００ｋＨｚ以下のＲＦ電界を印加する。 【効果】 通常の連続プラズマ放電中では正イオンの１
０％未満程度の負イオンが生成され、負イオンはアフタ
ーグロープラズマ中では正イオンと同程度まで上昇す
る。この時定数である１０〜１００μ秒程度のパルス変
調プラズマでは負イオンの生成効率が連続放電に比べ圧
倒的に大きい。この時６００ｋＨｚ以下のＲＦ電界を印
加すると質量の重いイオンも十分追従して加速され、基
板表面に正イオン・負イオンが半周期ずつ入射する。従
って電荷蓄積が抑制され、正イオンだけでなく負イオン
もエッチングに寄与でき、エッチング速度が高められ
る。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、表面処理に関し、特に
高周波電界を利用して生成したプラズマを用いて基板表
面の処理を行うプラズマ処理装置に関するものである。
【０００２】
【従来の技術】従来、この種のマイクロ波プラズマエッ
チング装置として、図７（Ａ）に示すものがある。例え
ば特開昭５６−１５５５３５号公報、特開昭６０−１３
４４２３号公報参照。この装置はマイクロ波６０８によ
る電子サイクロトロン共鳴放電中にエッチング試料６１
４をセットし、該試料に８００ｋＨｚ〜１３．５６ＭＨ
ｚの基板バイアスを印加してエッチング処理を行うもの
である。図７（Ｂ）はこのときのＲＦ電圧と電子および
イオン入射領域を示す図である。特開平４−１０３７８
３号公報には、高速・異方性エッチングを行いかつエッ
チング速度を均一にするために基板の処理をＥＣＲ共鳴
光で行いかつ基板バイアス電圧に１００〜６００ｋＨｚ
の高周波を印加してエッチングするためのＥＳＲプラズ
マエッチング装置が記載されている。
【０００３】
【発明が解決しようとする課題】しかし、上述した従来
の技術においては基板表面への電荷蓄積が生じ、高速性
・異方性とダメージの抑制の両立が難しいという問題点
がある。
【０００４】本発明は、このような従来の問題点を解決
するためになされたものである。パルス変調プラズマを
用いることでプラズマ中の負イオン密度を増加させ、か
つイオンが追従できる低周波数バイアスを印加すること
で、基板に交互に正イオンと負イオンを入射させること
で電荷蓄積を抑制すると共により一層の高速・異方性エ
ッチングを両立できることを目的とする。
【０００５】
【課題を解決するための手段】本発明は、プラズマ生成
用高周波を１０〜１００μ秒でパルス変調し、かつ該プ
ラズマ中に設置した基板に６００ｋＨｚ以下のバイアス
を印加することを特徴とするプラズマ処理方法とその装
置である。
【０００６】
【作用】本発明では、１０〜１００μ秒でプラズマをパ
ルス変調することにより、プラズマ中の負イオンを連続
放電に比べ圧倒的に増加させることができる。これは、
負イオンがアフターグロー中で効率よく生成され、その
生成時間が１０〜１００μ秒程度であることによる。こ
の時、６００ｋＨｚ以下のＲＦ電界を該プラズマに印加
すると図１（Ｂ）に示すように質量の重い正・負イオン
がＲＦ電界に追従して基板に加速され半周期ずつ交互に
入射することになる。これにより、基板表面での電荷蓄
積は抑制され、また、正イオンばかりでなく加速されて
入射した負イオンによってもエッチングが進むので、エ
ッチング速度の上昇が期待できる。また、磁場を用いた
プラズマで顕著に表れる電子とイオンの運動の違いから
生じるダメージや異常エッチングを抑制することができ
る。
【０００７】このようにして表面での電荷蓄積によるデ
バイスへのダメージを抑制できるとともに、高速かつ異
方性エッチングを両立して行うことができる。
【０００８】
【実施例】図１（Ａ）は本発明を説明するための装置の
第一の実施例である。本装置は、マイクロ波電界とコイ
ル６による磁界によりプラズマ７を生成するプラズマ生
成室１と基板搬送室とが互いに隣接するように構成され
ている。このプラズマ生成室にはプラズマを生成するた
めのガスを導入するガス系が接続されるとともに、２．
４５ＧＨｚ程度のマイクロ波を導入する導波管２が設置
されている。マイクロ波電源３からの導入マイクロ波は
パルス回路４とファンクションジェネレータ５により１
０〜５０μ秒にパルス変調され、プラズマ生成室に設置
された基板ホルダ部８の基板９には４００ｋＨｚのバイ
アスが印加されている。図１（Ｂ）はＲＦ電圧とイオン
及び電子の入射の関係を示す図である。
【０００９】図２は酸素プラズマにおけるアフターグロ
ープラズマ中の負イオン生成量の時間変位を示す。ＲＦ
パワー０．９０ｋＷ、酸素圧０．４７Ｐａの条件で負イ
オンはパワーＯＦＦ（Ｔ＝１５．０ｍｓｅｃの時点）後
数μ秒程度から生成し、３０μ秒程度で最大値をもつ。
このことから、１０〜５０μ秒のパルス変調プラズマに
より負イオン生成が効率よくなされることがわかる。
【００１０】図３は窒素プラズマ中に設置された基板に
印加する高周波周波数と基板上に生成されるバイアス電
圧（基板シース電圧）の関係を示す。６００ｋＨｚ以下
の周波数になると基板上にバイアス電圧が生じなくなる
ことがわかる。これは、正イオンがバイアス周波数に追
従しイオンと電子が基板に交互に入射するためである。
すなわち、イオンが周波数に追従できるのは６００ｋＨ
ｚ以下の周波数であることがわかる。
【００１１】この実施例から１０〜５０μ秒のパルス変
調プラズマにより正・負イオンを効率よく生成し、その
正負イオンを６００ｋＨｚ以下の低周波バイアスにより
基板に効率よく交互に入射させることが可能となる。
【００１２】また、本発明は放電周波数に依存すること
なく適用でき、さらに、基板バイアスもパルス変調する
ことで基板に入射するバイアス電圧を時間制御でき、よ
り高精度なエッチングが実現できる。
【００１３】第二の実施例について説明する。図４に塩
素プラズマ中のアフターグロー中に発生する負イオンの
時間変位を示す。パルスＯＦＦ時間が１００μ秒程度ま
で負イオンが生成していることがわかる。
【００１４】この時、６００ｋＨｚのＲＦバイアスを基
板に印加した場合のポリシリコンエッチング速度及び均
一性を図５に示す。放電停止時間が１００μ秒程度まで
長くなるにつれてエッチング速度が上昇し、エッチング
均一性が改善されることがわかる。これは、放電停止時
に発生する負イオンによってプラズマポテンシャルが均
一化され、かつ、負イオンが基板に入射してエッチング
に寄与するためである。このことから、１００μ秒程度
の放電停止時間が有効であることがわかった。
【００１５】図６はマイクロ波、イオン密度、基板バイ
アスを示す図であり、この図６に示す実施例は、パルス
放電における放電停止時間を９０％以上とし、多量の負
イオンと正イオンが存在する放電停止中のみに６００ｋ
Ｈｚの低周波ＲＦバイアスを印加することで正負イオン
のみでエッチングを行う例である。例えば、ＥＣＲプラ
ズマ等では１０μ秒程度の放電時間中に十分な密度の正
イオンが生成されるため、その後１００μ秒の放電停止
を行うことで多量の正負イオンが生成される。この時、
６００ｋＨｚのＲＦ電界を放電ＯＦＦ時のみに印加する
ようにすれば、基板には移動度の同じ正負イオンのみ入
射し、従来の電子及びイオンの移動度の違いによって発
生する電荷蓄積（チャージング）を抑制することが可能
である。この実施例から放電用高周波電界は１０〜１０
０μ秒の範囲のパルス変調がよいことがわかる。
【００１６】
【発明の効果】以上説明したように、本発明のプラズマ
処理方法によれば、電荷蓄積の無い高速・高選択・異方
性エッチングが実現できる。
【図面の簡単な説明】
【図１】本発明を説明するための図。
【図２】アフターグロープラズマ中の負イオンの生成の
時間変位を示す図。
【図３】基板バイアス周波数と基板シース電圧（セルフ
バイアス電圧）の関係を示す図。
【図４】本発明を説明するための図。
【図５】本発明を説明するための図。
【図６】本発明を説明するための図。
【図７】従来例によるプラズマエッチング装置を説明す
るための図。
【符号の説明】
１ プラズマチャンバ（生成管） ２ 導波管 ３ マイクロ波電源 ４ パルス回路 ５ ファンクションジェネレータ ６ コイル ７ プラズマ ８ 基板電極 ９ 基板 ６０１ プラズマ生成室 ６０２ 反応室 ６０３ ソレノイドコイル ６０４ プラズマ引き出し窓 ６０５ 導波管 ６０７ ガス導入口 ６０８ マイクロ波 ６０９ プラズマ ６１０ 基板ホルダ ６１４ エッチング材料（基板）

Claims (5)

    【特許請求の範囲】
  1. 【請求項１】 プラズマ生成室内で高周波によって発生
    する電場を利用して処理ガスをプラズマ化し、該プラズ
    マを基板に照射して基板処理を行うプラズマ処理方法に
    おいて、放電用高周波電界を１０〜１００μ秒の範囲で
    パルス変調するとともに、該プラズマ中に設置された基
    板電極へ６００ｋＨｚ以下のＲＦ電界を印加することを
    特徴とするプラズマ処理方法。
  2. 【請求項２】 放電用高周波電界のパルス変調デューテ
    ィ比を１０％以下とすることを特徴とする請求項１記載
    のプラズマ処理方法。
  3. 【請求項３】 基板に印加するＲＦ電界を放電用高周波
    電界のパルス変調に同期させてパルス変調することを特
    徴とする請求項１記載のプラズマ処理方法。
  4. 【請求項４】 基板に印加するＲＦ電界を放電用高周波
    電界のパルス変調に同期させて、かつ、放電用高周波電
    界の停止時（ＯＦＦ時）のみに印加することを特徴とす
    る請求項１記載のプラズマ処理方法。
  5. 【請求項５】 プラズマ生成室内に高周波を発生するた
    めの電源と、磁場をかける手段と、前記高周波を１０〜
    １００μ秒の範囲でパルス変調するためのパルス回路
    と、プラズマ生成室内の基板電極に６００ｋＨｚ以下の
    ＲＦ電界を印加するＲＦ電源を有することを特徴とする
    プラズマ処理装置。
JP7115655A 1994-10-27 1995-05-15 プラズマ処理方法及びその装置 Expired - Fee Related JP2845163B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7115655A JP2845163B2 (ja) 1994-10-27 1995-05-15 プラズマ処理方法及びその装置
US08/548,730 US5827435A (en) 1994-10-27 1995-10-26 Plasma processing method and equipment used therefor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6-263763 1994-10-27
JP26376394 1994-10-27
JP7115655A JP2845163B2 (ja) 1994-10-27 1995-05-15 プラズマ処理方法及びその装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP10088491A Division JPH10284297A (ja) 1998-04-01 1998-04-01 プラズマ処理方法及びその装置

Publications (2)

Publication Number Publication Date
JPH08181125A true JPH08181125A (ja) 1996-07-12
JP2845163B2 JP2845163B2 (ja) 1999-01-13

Family

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Country Link
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6217704B1 (en) 1998-09-22 2001-04-17 Canon Kabushiki Kaisha Plasma processing apparatus
US6217703B1 (en) 1998-09-22 2001-04-17 Canon Kabushiki Kaisha Plasma processing apparatus
US6372654B1 (en) 1999-04-07 2002-04-16 Nec Corporation Apparatus for fabricating a semiconductor device and method of doing the same
US6511575B1 (en) 1998-11-12 2003-01-28 Canon Kabushiki Kaisha Treatment apparatus and method utilizing negative hydrogen ion
WO2004112120A1 (ja) * 2003-06-10 2004-12-23 Sumitomo Precision Products Co., Ltd. シリコン基板のエッチング方法
JP2007027097A (ja) * 2005-07-13 2007-02-01 Samsung Electronics Co Ltd プラズマを分離加速させる中性ビームエッチング装置
US7214625B2 (en) 2003-09-10 2007-05-08 Denso Corporation Method for manufacturing movable portion of semiconductor device
KR20110074756A (ko) * 2008-10-23 2011-07-01 램 리써치 코포레이션 포토레지스트를 제거하는 방법 및 장치
US8828254B2 (en) 2011-07-27 2014-09-09 Hitachi High-Technologies Corporation Plasma processing method

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US6200651B1 (en) * 1997-06-30 2001-03-13 Lam Research Corporation Method of chemical vapor deposition in a vacuum plasma processor responsive to a pulsed microwave source
JPH1180975A (ja) 1997-09-04 1999-03-26 Speedfam Co Ltd プラズマエッチング装置の耐食システム及びその方法
EP0989595A3 (en) * 1998-09-18 2001-09-19 Ims-Ionen Mikrofabrikations Systeme Gmbh Device for processing a surface of a substrate
US6635577B1 (en) 1999-03-30 2003-10-21 Applied Materials, Inc Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system
SG93862A1 (en) * 1999-03-30 2003-01-21 Applied Materials Inc Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system
US6319355B1 (en) * 1999-06-30 2001-11-20 Lam Research Corporation Plasma processor with coil responsive to variable amplitude rf envelope
US6566272B2 (en) 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
US6379223B1 (en) 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
US6299741B1 (en) 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
JP2001168086A (ja) 1999-12-09 2001-06-22 Kawasaki Steel Corp 半導体装置の製造方法および製造装置
GB2360530A (en) * 2000-03-25 2001-09-26 Plasma Quest Ltd High target utilisation sputtering system with remote plasma source
US6875700B2 (en) * 2000-08-29 2005-04-05 Board Of Regents, The University Of Texas System Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges
US6777037B2 (en) * 2001-02-21 2004-08-17 Hitachi, Ltd. Plasma processing method and apparatus
JP2002289584A (ja) * 2001-03-26 2002-10-04 Ebara Corp 表面処理方法
DE10309711A1 (de) * 2001-09-14 2004-09-16 Robert Bosch Gmbh Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma
US20030201185A1 (en) * 2002-04-29 2003-10-30 Applied Materials, Inc. In-situ pre-clean for electroplating process
US7189313B2 (en) * 2002-05-09 2007-03-13 Applied Materials, Inc. Substrate support with fluid retention band
US20030209523A1 (en) * 2002-05-09 2003-11-13 Applied Materials, Inc. Planarization by chemical polishing for ULSI applications
US20040112735A1 (en) * 2002-12-17 2004-06-17 Applied Materials, Inc. Pulsed magnetron for sputter deposition
US20040132311A1 (en) * 2003-01-06 2004-07-08 Applied Materials, Inc. Method of etching high-K dielectric materials
US6942813B2 (en) * 2003-03-05 2005-09-13 Applied Materials, Inc. Method of etching magnetic and ferroelectric materials using a pulsed bias source
JP2004281232A (ja) * 2003-03-14 2004-10-07 Ebara Corp ビーム源及びビーム処理装置
JP2004281230A (ja) * 2003-03-14 2004-10-07 Ebara Corp ビーム源及びビーム処理装置
US7464271B2 (en) * 2004-10-04 2008-12-09 Sony Corporation Systems and methods of providing content protection for digital video products
US7214628B2 (en) 2005-02-02 2007-05-08 Applied Materials, Inc. Plasma gate oxidation process using pulsed RF source power
US7141514B2 (en) * 2005-02-02 2006-11-28 Applied Materials, Inc. Selective plasma re-oxidation process using pulsed RF source power
US7570028B2 (en) * 2007-04-26 2009-08-04 Advanced Energy Industries, Inc. Method and apparatus for modifying interactions between an electrical generator and a nonlinear load
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8716984B2 (en) 2009-06-29 2014-05-06 Advanced Energy Industries, Inc. Method and apparatus for modifying the sensitivity of an electrical generator to a nonlinear load
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8465811B2 (en) 2011-01-28 2013-06-18 Asm Japan K.K. Method of depositing film by atomic layer deposition with pulse-time-modulated plasma
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US20140360670A1 (en) * 2013-06-05 2014-12-11 Tokyo Electron Limited Processing system for non-ambipolar electron plasma (nep) treatment of a substrate with sheath potential
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
CN103397304B (zh) * 2013-08-21 2015-05-27 南京浩穰环保科技有限公司 微弧离子镀方法
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
EP3077568B1 (en) * 2013-12-02 2019-02-20 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of a process chamber
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
KR102354490B1 (ko) 2016-07-27 2022-01-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102613349B1 (ko) 2016-08-25 2023-12-14 에이에스엠 아이피 홀딩 비.브이. 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7214724B2 (ja) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー．ブイ． バッチ炉で利用されるウェハカセットを収納するための収納装置
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
JP7124098B2 (ja) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11404245B2 (en) 2018-02-28 2022-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. DC bias in plasma process
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TWI843623B (zh) 2018-05-08 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
KR20190129718A (ko) 2018-05-11 2019-11-20 에이에스엠 아이피 홀딩 비.브이. 기판 상에 피도핑 금속 탄화물 막을 형성하는 방법 및 관련 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 水氣降低的晶圓處置腔室
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TW202409324A (zh) 2018-06-27 2024-03-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料之循環沉積製程
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR102686758B1 (ko) 2018-06-29 2024-07-18 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
CN110896019A (zh) * 2018-09-12 2020-03-20 北京北方华创微电子装备有限公司 等离子体刻蚀设备及刻蚀方法
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
TWI844567B (zh) 2018-10-01 2024-06-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材保持裝置、含有此裝置之系統及其使用之方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US12014901B2 (en) 2018-10-25 2024-06-18 Tokyo Electron Limited Tailored electron energy distribution function by new plasma source: hybrid electron beam and RF plasma
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11205562B2 (en) 2018-10-25 2021-12-21 Tokyo Electron Limited Hybrid electron beam and RF plasma system for controlled content of radicals and ions
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN118422165A (zh) 2019-08-05 2024-08-02 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
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TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
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US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
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US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
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US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
KR20210089079A (ko) 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. 채널형 리프트 핀
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US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
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KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
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TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
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US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
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USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
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USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
CN113629161B (zh) * 2021-08-04 2024-06-07 苏州拓升智能装备有限公司 间歇等离子体氧化方法和装置、太阳电池的制备方法
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113625A (ja) * 1984-06-29 1986-01-21 Hitachi Ltd プラズマ処理装置
JPS6473620A (en) * 1987-09-14 1989-03-17 Mitsubishi Electric Corp Plasma applying device
JPH01236629A (ja) * 1987-11-25 1989-09-21 Fuji Electric Co Ltd プラズマ処理装置
JPH06267900A (ja) * 1993-01-18 1994-09-22 Nec Corp プラズマエッチング方法とその装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155535A (en) * 1980-05-02 1981-12-01 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
JPH0693447B2 (ja) * 1983-12-23 1994-11-16 株式会社日立製作所 マイクロ波プラズマ処理装置
GB2212974B (en) * 1987-11-25 1992-02-12 Fuji Electric Co Ltd Plasma processing apparatus
EP0395415B1 (en) * 1989-04-27 1995-03-15 Fujitsu Limited Apparatus for and method of processing a semiconductor device using microwave-generated plasma
JP2687966B2 (ja) * 1990-08-20 1997-12-08 富士通株式会社 半導体装置の製造方法
JP3071450B2 (ja) * 1990-08-22 2000-07-31 日本電気株式会社 マイクロ波プラズマ処理装置
JPH04232261A (ja) * 1990-12-28 1992-08-20 Shimadzu Corp 薄膜形成装置
JP3026704B2 (ja) * 1993-07-29 2000-03-27 富士通株式会社 マグネトロン発振出力制御装置及びプラズマ処理方法
US5468341A (en) * 1993-12-28 1995-11-21 Nec Corporation Plasma-etching method and apparatus therefor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113625A (ja) * 1984-06-29 1986-01-21 Hitachi Ltd プラズマ処理装置
JPS6473620A (en) * 1987-09-14 1989-03-17 Mitsubishi Electric Corp Plasma applying device
JPH01236629A (ja) * 1987-11-25 1989-09-21 Fuji Electric Co Ltd プラズマ処理装置
JPH06267900A (ja) * 1993-01-18 1994-09-22 Nec Corp プラズマエッチング方法とその装置

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6217704B1 (en) 1998-09-22 2001-04-17 Canon Kabushiki Kaisha Plasma processing apparatus
US6217703B1 (en) 1998-09-22 2001-04-17 Canon Kabushiki Kaisha Plasma processing apparatus
US6410450B2 (en) 1998-09-22 2002-06-25 Canon Kabushiki Kaisha Process for producing a semiconductor device
US6426302B2 (en) 1998-09-22 2002-07-30 Canon Kabushiki Kaisha Process for producing semiconductor device
US6511575B1 (en) 1998-11-12 2003-01-28 Canon Kabushiki Kaisha Treatment apparatus and method utilizing negative hydrogen ion
US6372654B1 (en) 1999-04-07 2002-04-16 Nec Corporation Apparatus for fabricating a semiconductor device and method of doing the same
WO2004112120A1 (ja) * 2003-06-10 2004-12-23 Sumitomo Precision Products Co., Ltd. シリコン基板のエッチング方法
DE102004043233B4 (de) * 2003-09-10 2014-02-13 Denso Corporation Verfahren zum Herstellen eines beweglichen Abschnitts einer Halbleitervorrichtung
US7214625B2 (en) 2003-09-10 2007-05-08 Denso Corporation Method for manufacturing movable portion of semiconductor device
JP4563346B2 (ja) * 2005-07-13 2010-10-13 三星電子株式会社 プラズマを分離加速させる中性ビームエッチング装置
US7789992B2 (en) 2005-07-13 2010-09-07 Samsung Electronics Co., Ltd. Neutral beam etching device for separating and accelerating plasma
JP2007027097A (ja) * 2005-07-13 2007-02-01 Samsung Electronics Co Ltd プラズマを分離加速させる中性ビームエッチング装置
KR20110074756A (ko) * 2008-10-23 2011-07-01 램 리써치 코포레이션 포토레지스트를 제거하는 방법 및 장치
JP2012507143A (ja) * 2008-10-23 2012-03-22 ラム リサーチ コーポレーション フォトレジストを除去するための方法および装置
US8828254B2 (en) 2011-07-27 2014-09-09 Hitachi High-Technologies Corporation Plasma processing method
TWI500066B (zh) * 2011-07-27 2015-09-11 Hitachi High Tech Corp Plasma processing device
US9349603B2 (en) 2011-07-27 2016-05-24 Hitachi High-Technologies Corporation Plasma processing method
TWI581304B (zh) * 2011-07-27 2017-05-01 日立全球先端科技股份有限公司 Plasma etching apparatus and dry etching method
TWI620227B (zh) * 2011-07-27 2018-04-01 Hitachi High Tech Corp Plasma processing device and plasma etching method
US10600619B2 (en) 2011-07-27 2020-03-24 Hitachi High-Technologies Corporation Plasma processing apparatus
US11658011B2 (en) 2011-07-27 2023-05-23 Hitachi High-Tech Corporation Plasma processing apparatus

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