JPS6473620A - Plasma applying device - Google Patents
Plasma applying deviceInfo
- Publication number
- JPS6473620A JPS6473620A JP62230610A JP23061087A JPS6473620A JP S6473620 A JPS6473620 A JP S6473620A JP 62230610 A JP62230610 A JP 62230610A JP 23061087 A JP23061087 A JP 23061087A JP S6473620 A JPS6473620 A JP S6473620A
- Authority
- JP
- Japan
- Prior art keywords
- pulse
- high frequency
- generator
- power source
- microsecond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To present many chemically active species by providing a micropulse generator which can modulate a high frequency power source of an energy source of generating a plasma by a pulse width of microsecond degree in a pulse generator. CONSTITUTION:In order to apply a pulse of microsecond order between upper and lower electrodes 7 and 8, a micropulse generator 4 is applied to a pulse generator 3. A pulse of microsecond order is generated from the pulse generator by the generator 4, applied through a modulator 2 to a high frequency oscillated by a high frequency oscillator 1, amplified by a high band high frequency amplifier 5, and a high frequency voltage which becomes a pulse of microsecond order is applied to the electrode 7. A high frequency power is pulse-modulated, applied to a device, electron density is increased after the power source is turned ON and decreased after the power source is turned OFF. On the other hand, electron temperature is abruptly raised after the power source is turned ON, and abruptly reduced after the power source is turned OFF. The pulse width is set to 10 microsecond and an impact coefficient is set to 1/3. However, equivalent effect is obtained even if any values are employed if the modulation system equivalent to or more is used.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62230610A JP2598274B2 (en) | 1987-09-14 | 1987-09-14 | Plasma application equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62230610A JP2598274B2 (en) | 1987-09-14 | 1987-09-14 | Plasma application equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6473620A true JPS6473620A (en) | 1989-03-17 |
JP2598274B2 JP2598274B2 (en) | 1997-04-09 |
Family
ID=16910457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62230610A Expired - Lifetime JP2598274B2 (en) | 1987-09-14 | 1987-09-14 | Plasma application equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2598274B2 (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01149965A (en) * | 1987-12-07 | 1989-06-13 | Hitachi Ltd | Plasma reactor |
JPH06267900A (en) * | 1993-01-18 | 1994-09-22 | Nec Corp | Method and device for plasma etching |
JPH06342769A (en) * | 1992-08-21 | 1994-12-13 | Nissin Electric Co Ltd | Etching method and device |
JPH06342770A (en) * | 1992-08-21 | 1994-12-13 | Nissin Electric Co Ltd | Etching method and device |
JPH0897208A (en) * | 1995-08-11 | 1996-04-12 | Nec Corp | Plasma chemical vapor deposition method and its equipment and manufacture of multilayered interconnection |
JPH08181125A (en) * | 1994-10-27 | 1996-07-12 | Nec Corp | Plasma treatment and device thereof |
JP2002324698A (en) * | 2001-04-06 | 2002-11-08 | Eni Technologies Inc | Pulsed intelligent rf modulating controller |
JP2002538618A (en) * | 1999-03-05 | 2002-11-12 | アプライド マテリアルズ インコーポレイテッド | Dynamic control of species by time-modulated plasma |
US7059267B2 (en) | 2000-08-28 | 2006-06-13 | Micron Technology, Inc. | Use of pulsed grounding source in a plasma reactor |
US7253117B2 (en) | 2000-08-17 | 2007-08-07 | Micron Technology, Inc. | Methods for use of pulsed voltage in a plasma reactor |
JP2008121116A (en) * | 2006-11-10 | 2008-05-29 | Schott Ag | Method and apparatus for plasma enhanced chemical vapor deposition |
US20090047795A1 (en) * | 2007-08-17 | 2009-02-19 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method and storage medium |
US9659756B2 (en) | 2008-12-09 | 2017-05-23 | Tokyo Electron Limited | Plasma etching apparatus and plasma cleaning method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59171491A (en) * | 1983-03-18 | 1984-09-27 | 富士通株式会社 | Method and device for treating via microwave |
JPS611023A (en) * | 1984-06-13 | 1986-01-07 | Teru Saamuko Kk | Batch plasma device |
JPS627131A (en) * | 1985-07-03 | 1987-01-14 | Hitachi Ltd | Dry-etching device |
-
1987
- 1987-09-14 JP JP62230610A patent/JP2598274B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59171491A (en) * | 1983-03-18 | 1984-09-27 | 富士通株式会社 | Method and device for treating via microwave |
JPS611023A (en) * | 1984-06-13 | 1986-01-07 | Teru Saamuko Kk | Batch plasma device |
JPS627131A (en) * | 1985-07-03 | 1987-01-14 | Hitachi Ltd | Dry-etching device |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01149965A (en) * | 1987-12-07 | 1989-06-13 | Hitachi Ltd | Plasma reactor |
JPH06342769A (en) * | 1992-08-21 | 1994-12-13 | Nissin Electric Co Ltd | Etching method and device |
JPH06342770A (en) * | 1992-08-21 | 1994-12-13 | Nissin Electric Co Ltd | Etching method and device |
JPH06267900A (en) * | 1993-01-18 | 1994-09-22 | Nec Corp | Method and device for plasma etching |
JPH08181125A (en) * | 1994-10-27 | 1996-07-12 | Nec Corp | Plasma treatment and device thereof |
JPH0897208A (en) * | 1995-08-11 | 1996-04-12 | Nec Corp | Plasma chemical vapor deposition method and its equipment and manufacture of multilayered interconnection |
JP2002538618A (en) * | 1999-03-05 | 2002-11-12 | アプライド マテリアルズ インコーポレイテッド | Dynamic control of species by time-modulated plasma |
US7253117B2 (en) | 2000-08-17 | 2007-08-07 | Micron Technology, Inc. | Methods for use of pulsed voltage in a plasma reactor |
US7059267B2 (en) | 2000-08-28 | 2006-06-13 | Micron Technology, Inc. | Use of pulsed grounding source in a plasma reactor |
US7297637B2 (en) | 2000-08-28 | 2007-11-20 | Micron Technology, Inc. | Use of pulsed grounding source in a plasma reactor |
JP2002324698A (en) * | 2001-04-06 | 2002-11-08 | Eni Technologies Inc | Pulsed intelligent rf modulating controller |
JP2008121116A (en) * | 2006-11-10 | 2008-05-29 | Schott Ag | Method and apparatus for plasma enhanced chemical vapor deposition |
JP2012062579A (en) * | 2006-11-10 | 2012-03-29 | Schott Ag | Method and apparatus for plasma enhanced chemical vapor deposition |
US20090047795A1 (en) * | 2007-08-17 | 2009-02-19 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method and storage medium |
US8703002B2 (en) | 2007-08-17 | 2014-04-22 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method and storage medium |
US9659756B2 (en) | 2008-12-09 | 2017-05-23 | Tokyo Electron Limited | Plasma etching apparatus and plasma cleaning method |
Also Published As
Publication number | Publication date |
---|---|
JP2598274B2 (en) | 1997-04-09 |
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