JPS6473620A - Plasma applying device - Google Patents

Plasma applying device

Info

Publication number
JPS6473620A
JPS6473620A JP62230610A JP23061087A JPS6473620A JP S6473620 A JPS6473620 A JP S6473620A JP 62230610 A JP62230610 A JP 62230610A JP 23061087 A JP23061087 A JP 23061087A JP S6473620 A JPS6473620 A JP S6473620A
Authority
JP
Japan
Prior art keywords
pulse
generator
power source
frequency
microsecond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62230610A
Other languages
Japanese (ja)
Other versions
JP2598274B2 (en
Inventor
Shuji Nakao
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62230610A priority Critical patent/JP2598274B2/en
Publication of JPS6473620A publication Critical patent/JPS6473620A/en
Application granted granted Critical
Publication of JP2598274B2 publication Critical patent/JP2598274B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To present many chemically active species by providing a micropulse generator which can modulate a high frequency power source of an energy source of generating a plasma by a pulse width of microsecond degree in a pulse generator. CONSTITUTION:In order to apply a pulse of microsecond order between upper and lower electrodes 7 and 8, a micropulse generator 4 is applied to a pulse generator 3. A pulse of microsecond order is generated from the pulse generator by the generator 4, applied through a modulator 2 to a high frequency oscillated by a high frequency oscillator 1, amplified by a high band high frequency amplifier 5, and a high frequency voltage which becomes a pulse of microsecond order is applied to the electrode 7. A high frequency power is pulse-modulated, applied to a device, electron density is increased after the power source is turned ON and decreased after the power source is turned OFF. On the other hand, electron temperature is abruptly raised after the power source is turned ON, and abruptly reduced after the power source is turned OFF. The pulse width is set to 10 microsecond and an impact coefficient is set to 1/3. However, equivalent effect is obtained even if any values are employed if the modulation system equivalent to or more is used.
JP62230610A 1987-09-14 1987-09-14 Plasma application equipment Expired - Lifetime JP2598274B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62230610A JP2598274B2 (en) 1987-09-14 1987-09-14 Plasma application equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62230610A JP2598274B2 (en) 1987-09-14 1987-09-14 Plasma application equipment

Publications (2)

Publication Number Publication Date
JPS6473620A true JPS6473620A (en) 1989-03-17
JP2598274B2 JP2598274B2 (en) 1997-04-09

Family

ID=16910457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62230610A Expired - Lifetime JP2598274B2 (en) 1987-09-14 1987-09-14 Plasma application equipment

Country Status (1)

Country Link
JP (1) JP2598274B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149965A (en) * 1987-12-07 1989-06-13 Hitachi Ltd Plasma reactor
JPH06267900A (en) * 1993-01-18 1994-09-22 Nec Corp Method and device for plasma etching
JPH06342770A (en) * 1992-08-21 1994-12-13 Nissin Electric Co Ltd Etching method and device
JPH06342769A (en) * 1992-08-21 1994-12-13 Nissin Electric Co Ltd Etching method and device
JPH0897208A (en) * 1995-08-11 1996-04-12 Nec Corp Plasma chemical vapor deposition method and its equipment and manufacture of multilayered interconnection
JPH08181125A (en) * 1994-10-27 1996-07-12 Nec Corp Plasma treatment and device thereof
JP2002324698A (en) * 2001-04-06 2002-11-08 Eni Technologies Inc Pulsed intelligent rf modulating controller
JP2002538618A (en) * 1999-03-05 2002-11-12 アプライド マテリアルズ インコーポレイテッド Dynamic control of species by time-modulated plasma
US7059267B2 (en) 2000-08-28 2006-06-13 Micron Technology, Inc. Use of pulsed grounding source in a plasma reactor
US7253117B2 (en) 2000-08-17 2007-08-07 Micron Technology, Inc. Methods for use of pulsed voltage in a plasma reactor
JP2008121116A (en) * 2006-11-10 2008-05-29 Schott Ag Method and apparatus for plasma enhanced chemical vapor deposition
US20090047795A1 (en) * 2007-08-17 2009-02-19 Tokyo Electron Limited Plasma processing apparatus, plasma processing method and storage medium
US9659756B2 (en) 2008-12-09 2017-05-23 Tokyo Electron Limited Plasma etching apparatus and plasma cleaning method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171491A (en) * 1983-03-18 1984-09-27 Fujitsu Ltd Method and device for treating via microwave
JPS611023A (en) * 1984-06-13 1986-01-07 Teru Saamuko Kk Batch plasma device
JPS627131A (en) * 1985-07-03 1987-01-14 Hitachi Ltd Dry-etching device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171491A (en) * 1983-03-18 1984-09-27 Fujitsu Ltd Method and device for treating via microwave
JPS611023A (en) * 1984-06-13 1986-01-07 Teru Saamuko Kk Batch plasma device
JPS627131A (en) * 1985-07-03 1987-01-14 Hitachi Ltd Dry-etching device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01149965A (en) * 1987-12-07 1989-06-13 Hitachi Ltd Plasma reactor
JPH06342769A (en) * 1992-08-21 1994-12-13 Nissin Electric Co Ltd Etching method and device
JPH06342770A (en) * 1992-08-21 1994-12-13 Nissin Electric Co Ltd Etching method and device
JPH06267900A (en) * 1993-01-18 1994-09-22 Nec Corp Method and device for plasma etching
JPH08181125A (en) * 1994-10-27 1996-07-12 Nec Corp Plasma treatment and device thereof
JPH0897208A (en) * 1995-08-11 1996-04-12 Nec Corp Plasma chemical vapor deposition method and its equipment and manufacture of multilayered interconnection
JP2002538618A (en) * 1999-03-05 2002-11-12 アプライド マテリアルズ インコーポレイテッド Dynamic control of species by time-modulated plasma
US7253117B2 (en) 2000-08-17 2007-08-07 Micron Technology, Inc. Methods for use of pulsed voltage in a plasma reactor
US7297637B2 (en) 2000-08-28 2007-11-20 Micron Technology, Inc. Use of pulsed grounding source in a plasma reactor
US7059267B2 (en) 2000-08-28 2006-06-13 Micron Technology, Inc. Use of pulsed grounding source in a plasma reactor
JP2002324698A (en) * 2001-04-06 2002-11-08 Eni Technologies Inc Pulsed intelligent rf modulating controller
JP2008121116A (en) * 2006-11-10 2008-05-29 Schott Ag Method and apparatus for plasma enhanced chemical vapor deposition
JP2012062579A (en) * 2006-11-10 2012-03-29 Schott Ag Method and apparatus for plasma enhanced chemical vapor deposition
US20090047795A1 (en) * 2007-08-17 2009-02-19 Tokyo Electron Limited Plasma processing apparatus, plasma processing method and storage medium
US8703002B2 (en) 2007-08-17 2014-04-22 Tokyo Electron Limited Plasma processing apparatus, plasma processing method and storage medium
US9659756B2 (en) 2008-12-09 2017-05-23 Tokyo Electron Limited Plasma etching apparatus and plasma cleaning method

Also Published As

Publication number Publication date
JP2598274B2 (en) 1997-04-09

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