US20110256692A1 - Multiple precursor concentric delivery showerhead - Google Patents

Multiple precursor concentric delivery showerhead Download PDF

Info

Publication number
US20110256692A1
US20110256692A1 US12785241 US78524110A US20110256692A1 US 20110256692 A1 US20110256692 A1 US 20110256692A1 US 12785241 US12785241 US 12785241 US 78524110 A US78524110 A US 78524110A US 20110256692 A1 US20110256692 A1 US 20110256692A1
Authority
US
Grant status
Application
Patent type
Prior art keywords
gas
processing
channel
chamber
showerhead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12785241
Inventor
Alexander Tam
Anzhong Chang
Sumedh Acharya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • B05B1/18Roses; Shower heads
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519Inert gas curtains
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation

Abstract

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus provides a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, a plurality of concentric tube assemblies are disposed within the showerhead to separately deliver a first gas from a first gas channel and a second gas from a second gas channel into the processing volume of the chamber. In one embodiment, the showerhead further includes a heat exchanging channel through which the plurality of concentric tube assemblies is disposed.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • [0001]
    This application claims benefit of U.S. Provisional Patent Application Ser. No. 61/324,271 (APPM/015324L), filed Apr. 14, 2010, which is herein incorporated by reference.
  • BACKGROUND OF THE INVENTION
  • [0002]
    1. Field of the Invention
  • [0003]
    Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a showerhead design for use in metal organic chemical vapor deposition (MOCVD) and/or hydride vapor phase epitaxy (HVPE).
  • [0004]
    2. Description of the Related Art
  • [0005]
    Group III-V films are finding greater importance in the development and fabrication of a variety of semiconductor devices, such as short wavelength light emitting diodes (LEDs), laser diodes (LDs), and electronic devices including high power, high frequency, high temperature transistors and integrated circuits. For example, short wavelength (e.g., blue/green to ultraviolet) LEDs are fabricated using the Group III-nitride semiconducting material gallium nitride (GaN). It has been observed that short wavelength LEDs fabricated using GaN can provide significantly greater efficiencies and longer operating lifetimes than short wavelength LEDs fabricated using non-nitride semiconducting materials, such as Group II-VI materials.
  • [0006]
    One method that has been used for depositing Group III-nitrides, such as GaN, is metal organic chemical vapor deposition (MOCVD). This chemical vapor deposition method is generally performed in a reactor having a temperature controlled environment to assure the stability of a first precursor gas which contains at least one element from Group III, such as gallium (Ga). A second precursor gas, such as ammonia (NH3), provides the nitrogen needed to form a Group III-nitride. The two precursor gases are injected into a processing zone within the reactor where they mix and move towards a heated substrate in the processing zone. A carrier gas may be used to assist in the transport of the precursor gases towards the substrate. The precursors react at the surface of the heated substrate to form a Group III-nitride layer, such as GaN, on the substrate surface. The quality of the film depends in part upon deposition uniformity which, in turn, depends upon uniform mixing of the precursors across the substrate.
  • [0007]
    Multiple substrates may be arranged on a substrate carrier and each substrate may have a diameter ranging from 50 mm to 100 mm or larger. The uniform mixing of precursors over larger substrates and/or more substrates and larger deposition areas is desirable in order to increase yield and throughput. These factors are important since they directly affect the cost to produce an electronic device and, thus, a device manufacturer's competitiveness in the marketplace.
  • [0008]
    Interaction of the precursor gases with the hot hardware components, which are often found in the processing zone of an LED or LD forming reactor, generally causes the precursor to break-down and deposit on these hot surfaces. Typically, the hot reactor surfaces are formed by radiation from the heat sources used to heat the substrates. The deposition of the precursor materials on the hot surfaces can be especially problematic when it occurs in or on the precursor distribution components, such as the showerhead. Deposition on the precursor distribution components affects the flow distribution uniformity over time. Therefore, there is a need for a gas distribution apparatus that prevents or reduces the likelihood that the MOCVD precursors, or HVPE precursors, are heated to a temperature that causes them to break down and affect the performance of the gas distribution device.
  • [0009]
    Also, as the demand for LEDs, LDs, transistors, and integrated circuits increases, the efficiency of depositing high quality Group-III nitride films takes on greater importance. Therefore, there is a need for an improved deposition apparatus and process that can provide consistent film quality over larger substrates and larger deposition areas.
  • SUMMARY OF THE INVENTION
  • [0010]
    The present invention generally provides improved methods and apparatus for depositing Group III-nitride films using MOCVD and/or HVPE processes.
  • [0011]
    One embodiment of the present invention provides a showerhead apparatus comprising a first gas channel coupled to a first gas inlet, a second gas channel coupled to a second gas inlet, a plurality of first gas conduits fluidly coupling the first gas channel to an exit surface of the showerhead apparatus, and a plurality of second gas conduits fluidly coupling the second gas channel to the exit surface of the showerhead apparatus. The first gas channel is isolated from the second gas channel, and at least one of the first gas conduits is disposed within at least one of the second gas conduits.
  • [0012]
    Another embodiment provides a substrate processing apparatus comprising a chamber body, a substrate support, and a showerhead apparatus, wherein a processing volume is defined by the chamber body, the substrate support, and the showerhead apparatus. The showerhead apparatus comprises a first gas channel coupled to a first gas inlet, a second gas channel coupled to a second gas inlet, a plurality of first gas conduits fluidly coupling the first gas channel to the processing volume, and a plurality of second gas conduits fluidly coupling the second gas channel to the processing volume. The first gas channel is isolated from the second gas channel, and at least one of the first gas conduits is concentrically disposed within at least one of the second gas conduits.
  • [0013]
    Yet another embodiment of the present invention provides a method of processing substrates comprising introducing a first gas into a processing volume of a processing chamber through a first gas inlet coupled to a first gas channel of a showerhead assembly and introducing a second gas into the processing volume of the processing chamber through a second gas inlet coupled to a second gas channel of the showerhead assembly. The first gas channel is isolated from the second gas channel, and the first gas is delivered into the processing volume through a plurality of first gas conduits and the second gas is delivered into the processing volume through a plurality of second gas conduits. At least one of the first gas conduits is concentrically disposed within at least one of the second gas conduits.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • [0014]
    So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
  • [0015]
    FIG. 1 is a schematic plan view illustrating one embodiment of a processing system for fabricating compound nitride semiconductor devices according to embodiments described herein.
  • [0016]
    FIG. 2 is a schematic cross-sectional view of a metal-organic chemical vapor deposition (MOCVD) chamber for fabricating compound nitride semiconductor devices according to one embodiment of the present invention.
  • [0017]
    FIG. 3 is an enlarged view of detail A shown in FIG. 2.
  • [0018]
    FIG. 4A is a partial, schematic, bottom view of a multiple precursor showerhead showing a classic, one-to-one, square pattern of gas passages.
  • [0019]
    FIG. 4B is a partial, schematic, bottom view of the showerhead from FIG. 2 and according to one embodiment of the present invention.
  • [0020]
    To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
  • DETAILED DESCRIPTION
  • [0021]
    Embodiments of the present invention generally provide a method and apparatus that may be utilized for deposition of Group III-nitride films using MOCVD and/or HVPE hardware. In one embodiment, the apparatus a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, a plurality of concentric tube assemblies are disposed within the showerhead to separately deliver a first gas from a first gas channel and a second gas from a second gas channel into the processing volume of the chamber. In one embodiment, the showerhead further includes a cooling channel through which the plurality of concentric tube assemblies is disposed.
  • [0022]
    FIG. 1 is a schematic plan view illustrating one embodiment of a processing system 100 that comprises the one or more MOCVD chambers 102 for fabricating compound nitride semiconductor devices according to embodiments described herein. In one embodiment, the processing system 100 is closed to atmosphere. The processing system 100 comprises a transfer chamber 106, a MOCVD chamber 102 coupled with the transfer chamber 106, a loadlock chamber 108 coupled with the transfer chamber 106, a batch loadlock chamber 109, for storing substrates, coupled with the transfer chamber 106, and a load station 110, for loading substrates, coupled with the loadlock chamber 108. The transfer chamber 106 comprises a robot assembly (not shown) operable to pick up and transfer substrates between the loadlock chamber 108, the batch loadlock chamber 109, and the MOCVD chamber 102. Although a single MOCVD chamber 102 is shown, it should be understood that more than one MOCVD chamber 102 or additionally, combinations of one or more MOCVD chambers 102 with one or more Hydride Vapor Phase Epitaxial (HVPE) chambers may also be coupled with the transfer chamber 106. It should also be understood that although a cluster tool is shown, the embodiments described herein may be performed using linear track systems.
  • [0023]
    In one embodiment, the transfer chamber 106 remains under vacuum during substrate transfer processes. The transfer chamber vacuum level may be adjusted to match the vacuum level of the MOCVD chamber 102. For example, when transferring substrates from a transfer chamber 106 into the MOCVD chamber 102 (or vice versa), the transfer chamber 106 and the MOCVD chamber 102 may be maintained at the same vacuum level. Then, when transferring substrates from the transfer chamber 106 to the load lock chamber 108 (or vice versa) or the batch load lock chamber 109 (or vice versa), the transfer chamber vacuum level may be adjusted to match the vacuum level of the loadlock chamber 108 or batch load lock chamber 109 even through the vacuum level of the loadlock chamber 108 or batch load lock chamber 109 and the MOCVD chamber 102 may be different. Thus, the vacuum level of the transfer chamber 106 is adjustable. In certain embodiments, substrates are transferred in a high purity inert gas environment, such as, a high purity N2 environment. In one embodiment, substrates transferred in an environment having greater than 90% N2. In certain embodiments, substrates are transferred in a high purity NH3 environment. In one embodiment, substrates are transferred in an environment having greater than 90% NH3. In certain embodiments, substrates are transferred in a high purity H2 environment. In one embodiment, substrates are transferred in an environment having greater than 90% H2.
  • [0024]
    In the processing system 100, the robot assembly (not shown) transfers a substrate carrier plate 112 loaded with substrates into the single MOCVD chamber 102 to undergo deposition. In one embodiment, the substrate carrier plate 112 may have a diameter ranging from about 200 mm to about 750 mm. The substrate carrier plate 112 may be formed from a variety of materials, including SiC or SiC-coated graphite. In one embodiment, the substrate carrier plate 112 comprises a silicon carbide material. In one embodiment, the substrate carrier plate 112 has a surface area of about 1,000 cm2 or more, preferably 2,000 cm2 or more, and more preferably 4,000 cm2 or more. After some or all deposition steps have been completed, the substrate carrier plate 112 is transferred from the MOCVD chamber 102 back to the loadlock chamber 108 via the transfer robot. In one embodiment, the substrate carrier plate 112 is then transferred to the load station 110. In another embodiment, the substrate carrier plate 112 may be stored in either the loadlock chamber 108 or the batch load lock chamber 109 prior to further processing in the MOCVD chamber 102. One exemplary processing system 100 that may be adapted in accordance with embodiments of the present invention is described in U.S. patent application Ser. No. 12/023,572, filed Jan. 31, 2008, now published as US 2009-0194026, entitled PROCESSING SYSTEM FOR FABRICATING COMPOUND NITRIDE SEMICONDUCTOR DEVICES, which is hereby incorporated by reference in its entirety.
  • [0025]
    In one embodiment, a system controller 160 controls activities and operating parameters of the processing system 100. The system controller 160 includes a computer processor and a computer-readable memory coupled to the processor. The processor executes system control software, such as a computer program stored in memory. Exemplary aspects of the processing system 100 and methods of use adaptable to embodiments of the present invention are further described in U.S. patent application Ser. No. 11/404,516, filed Apr. 14, 2006, now published as US 2007-024516, entitled EPITAXIAL GROWTH OF COMPOUND NITRIDE STRUCTURES, which is hereby incorporated by reference in its entirety.
  • [0026]
    FIG. 2 is a schematic cross-sectional view of the MOCVD chamber 102 according to embodiments of the present invention. The MOCVD chamber 102 comprises a chamber body 202, a chemical delivery module 203 for delivering precursor gases, carrier gases, cleaning gases, and/or purge gases, a remote plasma system 226 with a plasma source, a susceptor or substrate support 214, and a vacuum system 212. The chamber body 202 encloses a processing volume 208. A showerhead assembly 204 is disposed at one end of the processing volume 208, and the substrate carrier plate 112 is disposed at the other end of the processing volume 208. The substrate carrier plate 112 may be disposed on the substrate support 214. The substrate support 214 has z-lift capability for moving in a vertical direction, as shown by arrow 215. In one embodiment, the z-lift capability may be used to move the substrate support 214 upwardly, and closer to the showerhead assembly 204, and downwardly, and further away from the showerhead assembly 204. In one embodiment, the distance from the surface of the showerhead assembly 204 that is adjacent the processing volume 208 to the substrate carrier plate 112 during processing ranges from about 4 mm to about 41 mm. In certain embodiments, the substrate support 214 comprises a heating element (e.g., a resistive heating element (not shown)) for controlling the temperature of the substrate support 214 and consequently controlling the temperature of the substrate carrier plate 112 and substrates 240 positioned on the substrate carrier plate 112 and the substrate support 214.
  • [0027]
    In one embodiment, the showerhead assembly 204 has a first processing gas channel 204A coupled with the chemical delivery module 203 via a first processing gas inlet 259 for delivering a first precursor or first process gas mixture to the processing volume 208. In one embodiment, the chemical delivery module 203 is configured to deliver a metal organic precursor to the first processing gas channel 204A. In one example, the metal organic precursor comprises a suitable gallium (Ga) precursor (e.g., trimethyl gallium (“TMG”), triethyl gallium (TEG)), a suitable aluminum precursor (e.g., trimethyl aluminum (“TMA”)), or a suitable indium precursor (e.g., trimethyl indium (“TMI”)).
  • [0028]
    In one embodiment, a blocker plate 255 is positioned across the first processing gas channel 204A. The blocker plate 255 has a plurality of orifices 257 disposed therethrough. In one embodiment, the blocker plate 255 is positioned between the first processing gas inlet 259 and the first processing gas channel 204A for uniformly distributing gas received from the chemical delivery module 203 into the first processing gas channel 204A.
  • [0029]
    In one embodiment, the showerhead assembly 204 has a second processing gas channel 204B coupled with the chemical delivery module 203 for delivering a second precursor or second process gas mixture to the processing volume 208 via a second processing gas inlet 258. In one embodiment, the chemical delivery module 203 is configured to deliver a suitable nitrogen containing processing gas, such as ammonia (NH3) or other MOCVD or HVPE processing gas, to the second processing gas channel 204B. In one embodiment, the second processing gas channel 204B is separated from the first processing gas channel 204A by a first horizontal wall 276 of the showerhead 204.
  • [0030]
    The showerhead assembly 204 may further include a temperature control channel 204C coupled with a heat exchanging system 270 for flowing a heat exchanging fluid through the showerhead assembly 204 to help regulate the temperature of the showerhead assembly 204. Suitable heat exchanging fluids include, but are not limited to, water, water-based ethylene glycol mixtures, a perfluoropolyether (e.g., Galden® fluid), oil-based thermal transfer fluids, or similar fluids. In one embodiment, the second processing gas channel 204B is separated from the temperature control channel 204C by a second horizontal wall 277 of the showerhead 204. The temperature control channel 204C may be separated from the processing volume 208 by a third horizontal wall 278 of the showerhead 204.
  • [0031]
    FIG. 3 is an enlarged view of detail A shown in FIG. 2. Referring to FIGS. 2 and 3, in one embodiment, the first precursor or first processing gas mixture, such as a metal organic precursor, is delivered from the first processing gas channel 204A through the second processing gas channel 204B and the temperature control channel 204C into the processing volume 208 via a plurality of inner gas conduits 246. The inner gas conduits 246 may be cylindrical tubes located within aligned holes disposed through the first horizontal wall 276, the second horizontal wall 277, and the third horizontal wall 278 of the showerhead 204. In one embodiment, the inner gas conduits 246 are each attached to the first horizontal wall 276 of the showerhead assembly 204 by suitable means, such as brazing.
  • [0032]
    In one embodiment, the second precursor or second processing gas mixture, such as a nitrogen precursor, is delivered from the second processing gas channel 204B through the temperature control channel 204C and into the processing volume 208 via a plurality of outer gas conduits 245. The outer gas conduits 245 may be cylindrical tubes each located concentrically about a respective inner gas conduit 246. The outer gas conduits 245 are located within the aligned holes disposed through the second horizontal wall 277 and the third horizontal wall 278 of the showerhead 204. In one embodiment, the outer gas conduits 245 are each attached to the second horizontal wall 277 of the showerhead assembly 204 by suitable means, such as brazing.
  • [0033]
    As previously presented, the MOCVD chamber 102 may be used for deposition of Group III-nitride films. In one embodiment, the Group III-nitride films are deposited at a temperature exceeding about 550° C. In one embodiment, during processing, a cooling fluid is circulated through the temperature control channel 204C in order to cool the showerhead assembly 204, and in particular, to cool the metal organic precursor being delivered through the inner gas conduits 246, which extend through the cooling channel 204C, to prevent decomposition of the metal organic precursor before it is introduced into the processing volume 208. Additionally, it is believed that surrounding the metal organic precursor flowing through each inner gas conduit 246 with a flow of nitrogen-containing gas through the second processing gas channel 204B and each outer conduit 245, provides additional cooling and thermal insulation from the high processing temperatures within the processing volume 208, in order to prevent decomposition of the metal organic precursor before it is introduced into the processing volume 208.
  • [0034]
    FIG. 4A is a partial, schematic, bottom view of a multiple precursor showerhead 400 having a classic, one-to-one, square pattern of gas passages. Similar to embodiments of the present invention, the showerhead 400 has a first processing gas channel coupled to a processing region via a first gas conduit 402 and a second processing gas channel coupled to the processing region via a second gas conduit 404. In the depicted configuration, the first conduits 402 and the second gas conduits 404 are configured in a one-to-one square pattern. The configuration depicted in FIG. 4A results in a pattern in which each row of conduits has more of the second gas conduits 404 than the first gas conduits 402 or vice versa. Additionally, the one-to-one square pattern of first and second gas conduits (402 and 404) results in a limited number of gas passages from each gas channel due to space constraints. The result is a less uniform than desirable distribution of gases across substrates positioned in the processing volume, resulting in less than desirable deposition uniformity.
  • [0035]
    FIG. 4B is a partial, schematic, bottom view of the showerhead assembly 204 from FIG. 2 and according to one embodiment of the present invention. As depicted, the concentric tube configuration comprising the outer gas conduit 245 that delivers a second gas from the second processing gas channel 204B and the inner gas conduit 246 that delivers a first gas from the first processing gas channel 204A are arranged in a much closer and more uniform pattern as compared to that shown in FIG. 4A. In one embodiment, the concentric tubes are configured in a hexagonal close packed arrangement. Such a configuration provides a significantly increased number of gas passages for both the first and second processing gases as compared to the configuration depicted in FIG. 4A. For instance, the configuration depicted in FIG. 4B has over twice as many gas passages for each processing gas as the configuration depicted in FIG. 4A for showerheads (204, 400) having the same surface area exposed to the processing volume 208. As a result of the configuration depicted in FIG. 4B, each of the first and second processing gases, delivered from the first processing gas channel 204A and the second processing gas channel 204B, is delivered more evenly across the substrates 240 positioned in the processing volume 208, resulting in significantly more deposition uniformity than the configuration depicted in FIG. 4A.
  • [0036]
    Exemplary showerheads that may be adapted to practice embodiments described herein are described in U.S. patent application Ser. No. 11/873,132, filed Oct. 16, 2007, now published as US 2009-0098276, entitled MULTI-GAS STRAIGHT CHANNEL SHOWERHEAD, U.S. patent application Ser. No. 11/873,141, filed Oct. 16, 2007, now published as US 2009-0095222, entitled MULTI-GAS SPIRAL CHANNEL SHOWERHEAD, and U.S. patent application Ser. No. 11/873,170, filed Oct. 16, 2007, now published as US 2009-0095221, entitled MULTI-GAS CONCENTRIC INJECTION SHOWERHEAD, all of which are incorporated by reference in their entireties.
  • [0037]
    Referring back to FIG. 2, a lower dome 219 is disposed at one end of a lower volume 210, and the substrate carrier plate 112 is disposed at the other end of the lower volume 210. The substrate carrier plate 112 is shown in an elevated, process position, but may be moved to a lower position where, for example, the substrates 240 may be loaded or unloaded. An exhaust ring 220 may be disposed around the periphery of the substrate carrier plate 112 to help prevent deposition from occurring in the lower volume 210 and also help direct exhaust gases from the chamber 102 to exhaust ports 209. The lower dome 219 may be made of transparent material, such as high-purity quartz, to allow light to pass through for radiant heating of the substrates 240. The radiant heating may be provided by a plurality of inner lamps 221A and outer lamps 221B disposed below the lower dome 219. Reflectors 266 may be used to help control exposure of the chamber 102 to the radiant energy provided by the inner and outer lamps 221A, 221B. Additional rings of lamps (not shown) may also be used for finer temperature control of the substrates 240.
  • [0038]
    In certain embodiments of the present invention, a purge gas (e.g., a nitrogen containing gas) is delivered into the chamber 102 from the showerhead assembly 204 through one or more purge gas channels 281 coupled to a purge gas source 282. In this embodiment, the purge gas is distributed through a plurality of orifices 284 about the periphery of the showerhead 204. The plurality of orifices 284 may be configured in a circular pattern about the periphery of the showerhead assembly 204 and positioned distribute the purge gas about the periphery of the substrate carrier plate 112 to prevent undesirable deposition on edges of the substrate carrier plate 112, the showerhead 204, and other components of the chamber 102, which result in particle formation and, ultimately contamination of the substrates 240. The purge gas flows downwardly into multiple exhaust ports 209, which are disposed around an annular exhaust channel 205. An exhaust conduit 206 connects the annular exhaust channel 205 to a vacuum system 212, which includes a vacuum pump 207. The pressure of the chamber 102 may be controlled using a valve system, which controls the rate at which the exhaust gases are drawn from the annular exhaust channel 205.
  • [0039]
    In other embodiments, purge gas tubes 283 are disposed near the bottom of the chamber body 102. In this configuration, the purge gas enters the lower volume 210 of the chamber 102 and flows upwardly past the substrate carrier plate 112 and exhaust ring 220 and into the multiple exhaust ports 209. Other aspects of the MOCVD chamber 102 are described in U.S. patent application Ser. No. 12/023,520, filed Jan. 31, 2008, published as US 2009-0194024, and titled CVD APPARATUS, which is herein incorporated by reference in its entirety.
  • [0040]
    The chemical delivery module 203 supplies chemicals to the MOCVD chamber 102. Reactive gases (e.g., first and second precursor gases), carrier gases, purge gases, and cleaning gases may be supplied from the chemical delivery system through supply lines and into the chamber 102. In one embodiment, the gases are supplied through supply lines and into a gas mixing box where they are mixed together and delivered to the showerhead assembly 204. Generally supply lines for each of the gases include shut-off valves that can be used to automatically or manually shut-off the flow of the gas into its associated line, and mass flow controllers or other types of controllers that measure the flow of gas or liquid through the supply lines. Supply lines for each of the gases may also include concentration monitors for monitoring precursor concentrations and providing real time feedback. Backpressure regulators may be included to control precursor gas concentrations. Valve switching control may be used for quick and accurate valve switching capability. Moisture sensors in the gas lines measure water levels and can provide feedback to the system software which in turn can provide warnings/alerts to operators. The gas lines may also be heated to prevent precursors and cleaning gases from condensing in the supply lines. Depending upon the process used some of the sources may be liquid rather than gas. When liquid sources are used, the chemical delivery module includes a liquid injection system or other appropriate mechanism (e.g., a bubbler) to vaporize the liquid. Vapor from the liquids is then usually mixed with a carrier gas as would be understood by a person of skill in the art.
  • [0041]
    The remote plasma system 226 can produce a plasma for selected applications, such as chamber cleaning or etching residue from a process substrate. Plasma species produced in the remote plasma system 226 from precursors supplied via an input line are sent via a conduit 204D for dispersion through the showerhead assembly 204 to the MOCVD chamber 102. Precursor gases for a cleaning application may include chlorine containing gases, fluorine containing gases, iodine containing gases, bromine containing gases, nitrogen containing gases, and/or other reactive elements. The remote plasma system 226 may also be adapted to deposit CVD layers flowing appropriate deposition precursor gases into remote plasma system 226 during a layer deposition process. In one embodiment, the remote plasma system 226 is used to deliver active chlorine species to the processing volume 208 for cleaning the interior of the MOCVD chamber 102.
  • [0042]
    The temperature of the walls of the MOCVD chamber 102 and surrounding structures, such as the exhaust passageway, may be further controlled by circulating a heat-exchange liquid through channels (not shown) in the walls of the chamber 102. The heat-exchange liquid can be used to heat or cool the chamber body 202 depending on the desired effect. For example, hot liquid may help maintain an even thermal gradient during a thermal deposition process, whereas a cool liquid may be used to remove heat from the system during an in-situ plasma process, or to limit formation of deposition products on the walls of the chamber. This heating, referred to as heating by the “heat exchanger”, beneficially reduces or eliminates condensation of undesirable reactant products and improves the elimination of volatile products of the process gases and other contaminants that might contaminate the process if they were to condense on the walls of cool vacuum passages and migrate back into the processing chamber during periods of no gas flow.
  • [0043]
    In one embodiment, during processing, a first precursor gas flows from the first processing gas channel 204A in the showerhead assembly 204 and a second precursor gas flows from the second processing gas channel 204B formed in the showerhead assembly 204 towards the surface of the substrates 240. As noted above, the first precursor gas and/or second precursor gas may comprise one or more precursor gases or process gasses as well as carrier gases and dopant gases which may be mixed with the precursor gases. The draw of the exhaust ports 209 may affect gas flow so that the process gases flow substantially tangential to the substrates 240 and may be uniformly distributed radially across the substrate deposition surfaces in a laminar flow. In one embodiment, the processing volume 208 may be maintained at a pressure of about 760 Torr down to about 80 Torr.
  • [0044]
    In summary, embodiments of the present invention include a showerhead assembly having concentric tube assemblies for separately delivering processing gases into a processing volume of a processing chamber. The concentric tube assemblies may be disposed in a hexagonal close packed arrangement for providing greater uniformity of the processing gases into the processing volume of the processing chamber. As a result, improved deposition uniformity is achieved on a plurality of substrates positioned in the processing volume of the processing chamber.
  • [0045]
    While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (20)

  1. 1. A showerhead apparatus, comprising:
    a first gas channel coupled to a first gas inlet;
    a second gas channel coupled to a second gas inlet, wherein the first gas channel is isolated from the second gas channel;
    a temperature control channel coupled to a heat exchanging system configured to supply a heat exchanging fluid through the temperature control channel;
    a plurality of first gas conduits extending through the temperature control channel and fluidly coupling the first gas channel to an exit surface of the showerhead apparatus; and
    a plurality of second gas conduits extending through the temperature control channel and fluidly coupling the second gas channel to the exit surface of the showerhead apparatus, wherein at least one of the first gas conduits is disposed within at least one of the second gas conduits.
  2. 2. The apparatus of claim 1, wherein each of the first and second gas conduits forms a concentric tube assembly.
  3. 3. The apparatus of claim 2, wherein the concentric tube assemblies are configured in a hexagonal close packed arrangement.
  4. 4. The apparatus of claim 3, wherein the first gas channel is disposed above the second gas channel.
  5. 5. The apparatus of claim 4, wherein the second gas channel is disposed above the temperature control channel.
  6. 6. The apparatus of claim 2, further comprising a blocker plate positioned between the first gas inlet and the first gas channel.
  7. 7. The apparatus of claim 2, wherein the showerhead apparatus has a plurality of gas passages disposed about the periphery of the exit surface, wherein the plurality of gas passages are fluidly coupled to a purge gas inlet, and wherein the plurality of gas passages are isolated from the first gas channel, the second gas channel, and the temperature control.
  8. 8. The apparatus of claim 2, wherein the first gas inlet is coupled to a metal organic gas source, and wherein the second gas inlet is coupled to a nitrogen containing gas source.
  9. 9. A substrate processing apparatus, comprising:
    a chamber body;
    a substrate support; and
    a showerhead apparatus, wherein a processing volume is defined by the chamber body, the substrate support, and the showerhead apparatus, and wherein the showerhead apparatus comprises:
    a first gas channel coupled to a first gas inlet;
    a second gas channel coupled to a second gas inlet, wherein the first gas channel is isolated from the second gas channel;
    a temperature control channel coupled to a heat exchanging system configured to supply a heat exchanging fluid through the temperature control channel;
    a plurality of first gas conduits extending through the temperature control channel and fluidly coupling the first gas channel to the processing volume; and
    a plurality of second gas conduits extending through the temperature control channel and fluidly coupling the second gas channel to the processing volume, wherein at least one of the first gas conduits is concentrically disposed within at least one of the second gas conduits.
  10. 10. The apparatus of claim 9, wherein each of the first and second gas conduits forms a concentric tube assembly.
  11. 11. The apparatus of claim 10, wherein the concentric tube assemblies are configured in a hexagonal close packed arrangement.
  12. 12. The apparatus of claim 9, wherein the showerhead further comprises a blocker plate disposed between the first gas inlet and the first gas channel.
  13. 13. The apparatus of claim 9, wherein the showerhead has a plurality of gas passages disposed about the periphery of a surface of the showerhead adjacent the processing volume, wherein the plurality of gas passages are fluidly coupled to a purge gas inlet, and wherein the plurality of gas passages are isolated from the first gas channel, the second gas channel, and the temperature control channel.
  14. 14. The apparatus of claim 9, wherein the first gas inlet is coupled to a metal organic gas source, and wherein the second gas inlet is coupled to a nitrogen containing gas source.
  15. 15. The apparatus of claim 9, wherein the second gas channel is disposed between the first gas channel and the temperature control channel.
  16. 16. A method of processing substrates, comprising:
    introducing a first gas into a processing volume of a processing chamber through a first gas inlet coupled to a first gas channel of a showerhead assembly;
    introducing a second gas into the processing volume of the processing chamber through a second gas inlet coupled to a second gas channel of the showerhead assembly, wherein the first gas channel is isolated from the second gas channel, wherein the first gas is delivered into the processing volume through a plurality of first plurality of second gas conduits, and wherein at least one of the first gas conduits is concentrically disposed within at least one of the second gas conduits; and
    cooling the showerhead assembly by flowing a heat exchanging fluid through a temperature control channel disposed in the showerhead assembly, wherein the plurality of first and second gas conduits are disposed through the heat exchanging channel.
  17. 17. The method of claim 16, further comprising distributing the first gas across the first gas channel using a blocker plate disposed between the first gas inlet and the first gas channel.
  18. 18. The method of claim 16, further comprising introducing a purge gas about the perimeter of the processing volume through a plurality of gas passages disposed about the periphery of a surface of the showerhead assembly adjacent the processing volume.
  19. 19. The method of claim 16, wherein the first gas is a metal organic precursor and the second gas is a nitrogen containing gas.
  20. 20. The method of claim 19, wherein the metal organic precursor contains gallium and the nitrogen containing gas is ammonia.
US12785241 2010-04-14 2010-05-21 Multiple precursor concentric delivery showerhead Abandoned US20110256692A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US32427110 true 2010-04-14 2010-04-14
US12785241 US20110256692A1 (en) 2010-04-14 2010-05-21 Multiple precursor concentric delivery showerhead

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12785241 US20110256692A1 (en) 2010-04-14 2010-05-21 Multiple precursor concentric delivery showerhead

Publications (1)

Publication Number Publication Date
US20110256692A1 true true US20110256692A1 (en) 2011-10-20

Family

ID=44787169

Family Applications (5)

Application Number Title Priority Date Filing Date
US12785241 Abandoned US20110256692A1 (en) 2010-04-14 2010-05-21 Multiple precursor concentric delivery showerhead
US12815557 Active 2031-08-10 US8361892B2 (en) 2010-04-14 2010-06-15 Multiple precursor showerhead with by-pass ports
US12831522 Abandoned US20110253044A1 (en) 2010-04-14 2010-07-07 Showerhead assembly with metrology port purge
US12856747 Pending US20110256315A1 (en) 2010-04-14 2010-08-16 Showerhead assembly with gas injection distribution devices
US13751889 Active US8679956B2 (en) 2010-04-14 2013-01-28 Multiple precursor showerhead with by-pass ports

Family Applications After (4)

Application Number Title Priority Date Filing Date
US12815557 Active 2031-08-10 US8361892B2 (en) 2010-04-14 2010-06-15 Multiple precursor showerhead with by-pass ports
US12831522 Abandoned US20110253044A1 (en) 2010-04-14 2010-07-07 Showerhead assembly with metrology port purge
US12856747 Pending US20110256315A1 (en) 2010-04-14 2010-08-16 Showerhead assembly with gas injection distribution devices
US13751889 Active US8679956B2 (en) 2010-04-14 2013-01-28 Multiple precursor showerhead with by-pass ports

Country Status (1)

Country Link
US (5) US20110256692A1 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090169744A1 (en) * 2006-09-16 2009-07-02 Piezonics Co., Ltd Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases postively and method thereof
US20120024388A1 (en) * 2007-10-16 2012-02-02 Burrows Brian H Multi-gas straight channel showerhead
US20120052216A1 (en) * 2010-08-27 2012-03-01 Applied Materials, Inc. Gas distribution showerhead with high emissivity surface
US20130052804A1 (en) * 2009-10-09 2013-02-28 Applied Materials, Imn, Multi-gas centrally cooled showerhead design
WO2014123667A1 (en) * 2013-02-06 2014-08-14 Applied Materials, Inc. Gas injection apparatus and substrate process chamber incorporating same
US20140311411A1 (en) * 2012-01-10 2014-10-23 Eugene Technology Co., Ltd. Showerhead having cooling system and substrate processing apparatus including the showerhead
US20150007771A1 (en) * 2011-07-12 2015-01-08 Aixtron Se Gas inlet member of a cvd reactor
US20150007770A1 (en) * 2013-07-03 2015-01-08 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
US9057128B2 (en) 2011-03-18 2015-06-16 Applied Materials, Inc. Multiple level showerhead design
CN105200396A (en) * 2014-06-18 2015-12-30 中微半导体设备(上海)有限公司 Metalorganic chemical vapor deposition (MOCVD) equipment and method for removing parasitic particles thereof

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2930561B1 (en) * 2008-04-28 2011-01-14 Altatech Semiconductor Device and method of chemical vapor-phase process.
US8291857B2 (en) * 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US20110159183A1 (en) * 2009-12-24 2011-06-30 Ligadp Co., Ltd. Chemical vapor deposition apparatus and a control method thereof
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
CN103348776B (en) * 2011-02-15 2017-06-09 应用材料公司 Multizone plasma generation method and apparatus
US20120270384A1 (en) * 2011-04-22 2012-10-25 Applied Materials, Inc. Apparatus for deposition of materials on a substrate
US9644285B2 (en) 2011-08-22 2017-05-09 Soitec Direct liquid injection for halide vapor phase epitaxy systems and methods
US20130145989A1 (en) * 2011-12-12 2013-06-13 Intermolecular, Inc. Substrate processing tool showerhead
CN104471107A (en) * 2012-06-07 2015-03-25 索泰克公司 Deposition systems having deposition chambers configured for in-situ metrology with radiation deflection and related methods
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US20140099794A1 (en) * 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
US9399228B2 (en) 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
WO2014130672A1 (en) * 2013-02-20 2014-08-28 Applied Materials, Inc. Apparatus and methods for differential pressure chucking of substrates
JP6199619B2 (en) * 2013-06-13 2017-09-20 株式会社ニューフレアテクノロジー Vapor deposition apparatus
JP6153401B2 (en) * 2013-07-02 2017-06-28 株式会社ニューフレアテクノロジー Vapor deposition apparatus and a vapor phase growth method
US9159514B2 (en) * 2013-11-18 2015-10-13 Tyco Electronics Corporation Relay connector assembly for a relay system
GB201405447D0 (en) * 2014-03-26 2014-05-07 British American Tobacco Co Dispensing apparatus and methods
US20150275364A1 (en) * 2014-03-27 2015-10-01 Applied Materials, Inc. Cyclic Spike Anneal Chemical Exposure For Low Thermal Budget Processing
US9958673B2 (en) * 2014-07-29 2018-05-01 Nanometrics Incorporated Protected lens cover plate for an optical metrology device
US9576815B2 (en) * 2015-04-17 2017-02-21 Applied Materials, Inc. Gas-phase silicon nitride selective etch
US9758868B1 (en) 2016-03-10 2017-09-12 Lam Research Corporation Plasma suppression behind a showerhead through the use of increased pressure

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6301434B1 (en) * 1998-03-23 2001-10-09 Mattson Technology, Inc. Apparatus and method for CVD and thermal processing of semiconductor substrates
US6444039B1 (en) * 2000-03-07 2002-09-03 Simplus Systems Corporation Three-dimensional showerhead apparatus
US6565661B1 (en) * 1999-06-04 2003-05-20 Simplus Systems Corporation High flow conductance and high thermal conductance showerhead system and method
US20040099213A1 (en) * 2000-07-24 2004-05-27 Adomaitis Raymond A Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
US20050026402A1 (en) * 2001-12-21 2005-02-03 Holger Jurgensen Method and device for depositing crystalline layers on crystalline substrates
US20100263588A1 (en) * 2009-04-15 2010-10-21 Gan Zhiyin Methods and apparatus for epitaxial growth of semiconductor materials
US20110052833A1 (en) * 2009-08-27 2011-03-03 Applied Materials, Inc. Gas distribution showerhead and method of cleaning

Family Cites Families (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1373188A (en) * 1919-07-17 1921-03-29 Diamond Expansion Bolt Co Toggle
JPS622698B2 (en) * 1981-07-02 1987-01-21 Toshiba Machine Co Ltd
US4851295A (en) 1984-03-16 1989-07-25 Genus, Inc. Low resistivity tungsten silicon composite film
US5348911A (en) 1987-06-30 1994-09-20 Aixtron Gmbh Material-saving process for fabricating mixed crystals
US5229081A (en) * 1988-02-12 1993-07-20 Regal Joint Co., Ltd. Apparatus for semiconductor process including photo-excitation process
DE3909161A1 (en) 1988-05-06 1989-11-16 Elektromat Veb Device for gaszufuehrung and outlet for the gas phase machining of workpieces
JPH02234419A (en) 1989-03-07 1990-09-17 Koujiyundo Kagaku Kenkyusho:Kk Plasma electrode
JP2601365B2 (en) * 1990-04-13 1997-04-16 富士写真フイルム株式会社 Coating method
WO1992022084A1 (en) 1991-05-21 1992-12-10 Advantage Production Technology, Inc. Organic preclean for improving vapor phase wafer etch uniformity
JPH05152208A (en) * 1991-11-29 1993-06-18 Fujitsu Ltd Semiconductor production device
US5273588A (en) 1992-06-15 1993-12-28 Materials Research Corporation Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means
JPH07142401A (en) * 1993-11-18 1995-06-02 Fujitsu Ltd Fabrication of semiconductor device and film deposition equipment therefor
US5647911A (en) 1993-12-14 1997-07-15 Sony Corporation Gas diffuser plate assembly and RF electrode
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
EP0706425A4 (en) 1994-04-08 1997-12-29 Mark A Ray Selective plasma deposition
GB9411911D0 (en) 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
US5643394A (en) * 1994-09-16 1997-07-01 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5715361A (en) 1995-04-13 1998-02-03 Cvc Products, Inc. Rapid thermal processing high-performance multizone illuminator for wafer backside heating
US5830277A (en) * 1995-05-26 1998-11-03 Mattson Technology, Inc. Thermal processing system with supplemental resistive heater and shielded optical pyrometry
JPH0945624A (en) * 1995-07-27 1997-02-14 Tokyo Electron Ltd Leaf-type heat treating system
JPH0945670A (en) 1995-07-29 1997-02-14 Hewlett Packard Co <Hp> Vapor phase etching method and regrowth method for group iii n-based crystal
US5667592A (en) 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
US5951771A (en) * 1996-09-30 1999-09-14 Celestech, Inc. Plasma jet system
US5950925A (en) * 1996-10-11 1999-09-14 Ebara Corporation Reactant gas ejector head
US5855675A (en) 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
KR100469047B1 (en) * 1997-04-11 2005-01-31 동경 엘렉트론 주식회사 Processing System, Upper Electrode Unit and Method of Use of an Upper Electrode, and Electrode Unit and Method of Manufacturing the Electrode unit
US6270569B1 (en) 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
US6071375A (en) * 1997-12-31 2000-06-06 Lam Research Corporation Gas purge protection of sensors and windows in a gas phase processing reactor
US6309465B1 (en) 1999-02-18 2001-10-30 Aixtron Ag. CVD reactor
US6464843B1 (en) 1998-03-31 2002-10-15 Lam Research Corporation Contamination controlling method and apparatus for a plasma processing chamber
US6086673A (en) 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
US6383402B1 (en) * 1998-04-23 2002-05-07 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6390019B1 (en) * 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6218280B1 (en) 1998-06-18 2001-04-17 University Of Florida Method and apparatus for producing group-III nitrides
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
US6413839B1 (en) 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US6373114B1 (en) 1998-10-23 2002-04-16 Micron Technology, Inc. Barrier in gate stack for improved gate dielectric integrity
KR100304664B1 (en) 1999-02-05 2001-09-26 윤종용 Method for fabricating a GaN film
US6387182B1 (en) 1999-03-03 2002-05-14 Ebara Corporation Apparatus and method for processing substrate
US6305314B1 (en) 1999-03-11 2001-10-23 Genvs, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6540838B2 (en) 2000-11-29 2003-04-01 Genus, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6200893B1 (en) 1999-03-11 2001-03-13 Genus, Inc Radical-assisted sequential CVD
JP2000306889A (en) * 1999-04-21 2000-11-02 Hitachi Ltd Dry etching system
WO2000074127A1 (en) 1999-05-26 2000-12-07 Tokyo Electron Limited Plasma process device
JP3668079B2 (en) * 1999-05-31 2005-07-06 シャープ株式会社 Plasma processing apparatus
JP4055880B2 (en) * 1999-06-02 2008-03-05 東京エレクトロン株式会社 Plasma processing apparatus, plasma processing monitoring window member and the electrode plate for the plasma processing apparatus
US7018940B2 (en) 2002-12-30 2006-03-28 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
US6206972B1 (en) 1999-07-08 2001-03-27 Genus, Inc. Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
US6569765B1 (en) 1999-08-26 2003-05-27 Cbl Technologies, Inc Hybrid deposition system and methods
US6489241B1 (en) 1999-09-17 2002-12-03 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
JP3645768B2 (en) * 1999-12-07 2005-05-11 シャープ株式会社 Plasma processing apparatus
US6432259B1 (en) * 1999-12-14 2002-08-13 Applied Materials, Inc. Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6897119B1 (en) 1999-12-22 2005-05-24 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US6551399B1 (en) 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
JP4778655B2 (en) 2000-02-04 2011-09-21 アイクストロン、アーゲー One or method depositing a number of coatings to a substrate and device
KR100545034B1 (en) * 2000-02-21 2006-01-24 가부시끼가이샤 히다치 세이사꾸쇼 Plasma processing apparatus and method for processing substrate
JP4849705B2 (en) 2000-03-24 2012-01-11 東京エレクトロン株式会社 Plasma processing apparatus, plasma generation introducing member and dielectric
EP1275139B1 (en) 2000-04-17 2011-07-27 Mattson Technology Inc. Uv pretreatment process of ultra-thin oxynitride for formation of silicon nitride films
EP1162646A3 (en) * 2000-06-06 2004-10-13 Matsushita Electric Works, Ltd. Plasma treatment apparatus and method
KR100406174B1 (en) 2000-06-15 2003-11-19 주식회사 하이닉스반도체 Showerhead used chemically enhanced chemical vapor deposition equipment
US6616870B1 (en) 2000-08-07 2003-09-09 Shipley Company, L.L.C. Method of producing high aspect ratio domes by vapor deposition
DE10043601A1 (en) 2000-09-01 2002-03-14 Aixtron Ag Apparatus and method for depositing in particular crystalline layers on in particular crystalline substrates
DE10048759A1 (en) 2000-09-29 2002-04-11 Aixtron Gmbh Method and apparatus for depositing in particular of organic layers by means of OVPD
DE10056029A1 (en) 2000-11-11 2002-05-16 Aixtron Ag Controlling surface temperature of substrates supported by carriers on dynamic gas cushions in process chamber of CVD reactor comprises varying gas stream producing gas cushions from average value of optically measured surface temperatures
DE10057134A1 (en) 2000-11-17 2002-05-23 Aixtron Ag Process for depositing crystalline layers onto crystalline substrates in a process chamber of a CVD reactor comprises adjusting the kinematic viscosity of the carrier gas mixed
US6905547B1 (en) 2000-12-21 2005-06-14 Genus, Inc. Method and apparatus for flexible atomic layer deposition
JP4009100B2 (en) * 2000-12-28 2007-11-14 東京エレクトロン株式会社 Substrate heating apparatus and a substrate heating method
KR100434487B1 (en) 2001-01-17 2004-06-05 삼성전자주식회사 Shower head & film forming apparatus having the same
US6886491B2 (en) 2001-03-19 2005-05-03 Apex Co. Ltd. Plasma chemical vapor deposition apparatus
US6660083B2 (en) 2001-03-30 2003-12-09 Technologies And Devices International, Inc. Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE
DE10118130A1 (en) 2001-04-11 2002-10-17 Aixtron Ag Device for depositing crystalline layers on crystalline substrates in the gas phase comprises a heated reaction chamber with substrate holders arranged in a circular manner on a support, heated sources, and a hydride feed line
US20030019428A1 (en) * 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
DE10124609B4 (en) 2001-05-17 2012-12-27 Aixtron Se A method for depositing active layers on substrates
WO2003003414A3 (en) 2001-06-29 2003-03-20 Eric J Strang Directed gas injection apparatus for semiconductor processing
JP2003124125A (en) 2001-10-12 2003-04-25 Applied Materials Inc Semiconductor manufacturing apparatus
US6586886B1 (en) 2001-12-19 2003-07-01 Applied Materials, Inc. Gas distribution plate electrode for a plasma reactor
US20030116087A1 (en) * 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
EP1459362A2 (en) 2001-12-21 2004-09-22 Aixtron AG Method for depositing iii-v semiconductor layers on a non-iii-v substrate
WO2003065424A3 (en) * 2002-01-25 2004-03-11 Applied Materials Inc Apparatus for cyclical deposition of thin films
US20040060514A1 (en) * 2002-01-25 2004-04-01 Applied Materials, Inc. A Delaware Corporation Gas distribution showerhead
JP3982402B2 (en) * 2002-02-28 2007-09-26 東京エレクトロン株式会社 Processing apparatus and processing method
US6883733B1 (en) * 2002-03-28 2005-04-26 Novellus Systems, Inc. Tapered post, showerhead design to improve mixing on dual plenum showerheads
KR100568701B1 (en) 2002-06-19 2006-04-07 니폰덴신뎅와 가부시키가이샤 Semiconductor Light-Emitting Device
US6884296B2 (en) 2002-08-23 2005-04-26 Micron Technology, Inc. Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
JP4352783B2 (en) 2002-08-23 2009-10-28 東京エレクトロン株式会社 Gas supply system and processing system
KR100545814B1 (en) * 2002-08-31 2006-01-24 엘에스전선 주식회사 Edge fiber optic furnace and cutting edge using the same method
JP2006501681A (en) * 2002-09-30 2006-01-12 東京エレクトロン株式会社 Plasma processing system and method
US7115896B2 (en) 2002-12-04 2006-10-03 Emcore Corporation Semiconductor structures for gallium nitride-based devices
JP4026529B2 (en) 2003-04-10 2007-12-26 東京エレクトロン株式会社 Shower head structure and processing equipment
JP4115331B2 (en) * 2003-05-09 2008-07-09 株式会社日立国際電気 The substrate processing apparatus
WO2004109761A3 (en) * 2003-05-30 2006-12-14 Aviza Tech Inc Gas distribution system
DE102004009130A1 (en) 2004-02-25 2005-09-15 Aixtron Ag Intake system for an MOCVD reactor
NL1025624C2 (en) * 2004-03-03 2005-09-07 Solvist Flow Restriction.
JP5519105B2 (en) * 2004-08-02 2014-06-11 ビーコ・インストゥルメンツ・インコーポレイテッド Gas supply system for a method and a chemical vapor deposition reactor of a chemical vapor deposition
US7368368B2 (en) 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
US7682940B2 (en) 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
DE102004058521A1 (en) 2004-12-04 2006-06-14 Aixtron Ag Method and apparatus for the deposition of thick gallium nitride layers on a sapphire substrate and associated substrate holder
KR100578089B1 (en) 2004-12-22 2006-05-02 주식회사 시스넥스 Hydride vapor phase epitaxy unit
US20060137608A1 (en) * 2004-12-28 2006-06-29 Choi Seung W Atomic layer deposition apparatus
JP4601439B2 (en) * 2005-02-01 2010-12-22 株式会社日立ハイテクノロジーズ The plasma processing apparatus
US7722719B2 (en) * 2005-03-07 2010-05-25 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
WO2006099138A3 (en) 2005-03-10 2006-11-23 Univ California Technique for the growth of planar semi-polar gallium nitride
US7195934B2 (en) 2005-07-11 2007-03-27 Applied Materials, Inc. Method and system for deposition tuning in an epitaxial film growth apparatus
US20070076780A1 (en) * 2005-09-30 2007-04-05 Champetier Robert J Devices, systems and methods for determining temperature and/or optical characteristics of a substrate
JP4803578B2 (en) 2005-12-08 2011-10-26 東京エレクトロン株式会社 Film formation method
US7364991B2 (en) 2006-04-27 2008-04-29 Applied Materials, Inc. Buffer-layer treatment of MOCVD-grown nitride structures
US8475625B2 (en) * 2006-05-03 2013-07-02 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US7585769B2 (en) 2006-05-05 2009-09-08 Applied Materials, Inc. Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
US20080050889A1 (en) 2006-08-24 2008-02-28 Applied Materials, Inc. Hotwall reactor and method for reducing particle formation in GaN MOCVD
JP2008066490A (en) 2006-09-06 2008-03-21 Nippon Emc Ltd Vapor phase growing device
JP4903022B2 (en) * 2006-09-11 2012-03-21 株式会社アルバック Gas head and a semiconductor manufacturing device
US20080099147A1 (en) * 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
JP4826483B2 (en) * 2007-01-19 2011-11-30 東京エレクトロン株式会社 The plasma processing apparatus
US8235001B2 (en) * 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
US20090149008A1 (en) 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US7976631B2 (en) 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US20090095221A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US20090095222A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas spiral channel showerhead
US20090194026A1 (en) 2008-01-31 2009-08-06 Burrows Brian H Processing system for fabricating compound nitride semiconductor devices
US20090194024A1 (en) * 2008-01-31 2009-08-06 Applied Materials, Inc. Cvd apparatus
CN101911253B (en) * 2008-01-31 2012-08-22 应用材料公司 Closed loop MOCVD deposition control
US20090211707A1 (en) 2008-02-22 2009-08-27 Hermes Systems Inc. Apparatus for gas distribution and its applications
KR101404010B1 (en) * 2008-03-06 2014-06-12 주성엔지니어링(주) Etcher of substrate edge and method of etching substrate edge
KR101019953B1 (en) 2008-05-22 2011-03-09 주식회사 테스 Apparatus for supplying gas
KR100997104B1 (en) 2008-07-04 2010-11-29 주식회사 테스 Showerhead and apparatus for manufacturing semiconductor having the showerhead
JP2010059520A (en) * 2008-09-05 2010-03-18 Sharp Corp Vapor deposition apparatus and vapor deposition method
US8147137B2 (en) * 2008-11-19 2012-04-03 Applied Materials, Inc. Pyrometry for substrate processing
JP5107285B2 (en) * 2009-03-04 2012-12-26 東京エレクトロン株式会社 Deposition apparatus, a film forming method, a program, and a computer-readable storage medium
US8110889B2 (en) * 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6301434B1 (en) * 1998-03-23 2001-10-09 Mattson Technology, Inc. Apparatus and method for CVD and thermal processing of semiconductor substrates
US6565661B1 (en) * 1999-06-04 2003-05-20 Simplus Systems Corporation High flow conductance and high thermal conductance showerhead system and method
US6444039B1 (en) * 2000-03-07 2002-09-03 Simplus Systems Corporation Three-dimensional showerhead apparatus
US20040099213A1 (en) * 2000-07-24 2004-05-27 Adomaitis Raymond A Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
US20050026402A1 (en) * 2001-12-21 2005-02-03 Holger Jurgensen Method and device for depositing crystalline layers on crystalline substrates
US20100263588A1 (en) * 2009-04-15 2010-10-21 Gan Zhiyin Methods and apparatus for epitaxial growth of semiconductor materials
US20110052833A1 (en) * 2009-08-27 2011-03-03 Applied Materials, Inc. Gas distribution showerhead and method of cleaning

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150000594A1 (en) * 2006-09-16 2015-01-01 Piezonics Co., Ltd. Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof
US8882913B2 (en) * 2006-09-16 2014-11-11 Piezonics Co., Ltd Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof
US9469900B2 (en) * 2006-09-16 2016-10-18 PIEZONICS Co., Ltd.; Korea Institute of Industrial Technology Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof
US20150004313A1 (en) * 2006-09-16 2015-01-01 Piezonics Co., Ltd. Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof
US20090169744A1 (en) * 2006-09-16 2009-07-02 Piezonics Co., Ltd Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases postively and method thereof
US9476121B2 (en) * 2006-09-16 2016-10-25 Piezonics Co., Ltd. Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof
US8481118B2 (en) * 2007-10-16 2013-07-09 Applied Materials, Inc. Multi-gas straight channel showerhead
US20120024388A1 (en) * 2007-10-16 2012-02-02 Burrows Brian H Multi-gas straight channel showerhead
US9449859B2 (en) * 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
US20130052804A1 (en) * 2009-10-09 2013-02-28 Applied Materials, Imn, Multi-gas centrally cooled showerhead design
US20120052216A1 (en) * 2010-08-27 2012-03-01 Applied Materials, Inc. Gas distribution showerhead with high emissivity surface
US9057128B2 (en) 2011-03-18 2015-06-16 Applied Materials, Inc. Multiple level showerhead design
US9587312B2 (en) * 2011-07-12 2017-03-07 Aixtron Se Gas inlet member of a CVD reactor
US20150007771A1 (en) * 2011-07-12 2015-01-08 Aixtron Se Gas inlet member of a cvd reactor
US20140311411A1 (en) * 2012-01-10 2014-10-23 Eugene Technology Co., Ltd. Showerhead having cooling system and substrate processing apparatus including the showerhead
US9593418B2 (en) * 2012-01-10 2017-03-14 Eugene Technology Co., Ltd. Showerhead having cooling system and substrate processing apparatus including the showerhead
US9123758B2 (en) 2013-02-06 2015-09-01 Applied Materials, Inc. Gas injection apparatus and substrate process chamber incorporating same
WO2014123667A1 (en) * 2013-02-06 2014-08-14 Applied Materials, Inc. Gas injection apparatus and substrate process chamber incorporating same
US9677176B2 (en) * 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
US20150007770A1 (en) * 2013-07-03 2015-01-08 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
CN105200396A (en) * 2014-06-18 2015-12-30 中微半导体设备(上海)有限公司 Metalorganic chemical vapor deposition (MOCVD) equipment and method for removing parasitic particles thereof

Also Published As

Publication number Publication date Type
US20110256645A1 (en) 2011-10-20 application
US8679956B2 (en) 2014-03-25 grant
US20110253044A1 (en) 2011-10-20 application
US8361892B2 (en) 2013-01-29 grant
US20130298835A1 (en) 2013-11-14 application
US20110256315A1 (en) 2011-10-20 application

Similar Documents

Publication Publication Date Title
US6197121B1 (en) Chemical vapor deposition apparatus
US20080173735A1 (en) Gas treatment systems
US20080124817A1 (en) Stress measurement and stress balance in films
US20060263522A1 (en) Apparatus for chemical vapor deposition (CVD) with showerhead and method thereof
US20110204376A1 (en) Growth of multi-junction led film stacks with multi-chambered epitaxy system
US8980005B2 (en) Liner assembly for chemical vapor deposition chamber
US20040050325A1 (en) Apparatus and method for delivering process gas to a substrate processing system
US20060021574A1 (en) Multi-gas distribution injector for chemical vapor deposition reactors
US20110052833A1 (en) Gas distribution showerhead and method of cleaning
US20100263587A1 (en) High throughput multi-wafer epitaxial reactor
US20070240631A1 (en) Epitaxial growth of compound nitride semiconductor structures
US20110227037A1 (en) Enhancement of led light extraction with in-situ surface roughening
US20100258053A1 (en) Apparatus for delivering precursor gases to an epitaxial growth substrate
CN101423937B (en) Multi-gas concentric injection showerhead
US20120321786A1 (en) System for multi-region processing
US20070259464A1 (en) Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films
US20070254093A1 (en) MOCVD reactor with concentration-monitor feedback
US20070259504A1 (en) Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
US7364991B2 (en) Buffer-layer treatment of MOCVD-grown nitride structures
US20040175939A1 (en) Susceptor apparatus for inverted type MOCVD reactor
US20080124463A1 (en) System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus
US20090194026A1 (en) Processing system for fabricating compound nitride semiconductor devices
US20090149008A1 (en) Method for depositing group iii/v compounds
US20090223442A1 (en) Methods for high volume manufacture of group iii-v semiconductor materials
US20070259502A1 (en) Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE

Legal Events

Date Code Title Description
AS Assignment

Owner name: APPLIED MATERIALS, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TAM, ALEXANDER;CHANG, ANZHONG;ACHARYA, SUMEDH;SIGNING DATES FROM 20100528 TO 20100603;REEL/FRAME:024652/0421