JP2001207268A - 成膜装置 - Google Patents

成膜装置

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Publication number
JP2001207268A
JP2001207268A JP2000018886A JP2000018886A JP2001207268A JP 2001207268 A JP2001207268 A JP 2001207268A JP 2000018886 A JP2000018886 A JP 2000018886A JP 2000018886 A JP2000018886 A JP 2000018886A JP 2001207268 A JP2001207268 A JP 2001207268A
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Prior art keywords
gas
film
film deposition
plasma
pressure
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JP2000018886A
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English (en)
Inventor
Takahiro Mizoguchi
高宏 溝口
Koji Yokota
浩二 横田
Yoshito Hayakawa
義人 早川
Makoto Maeda
誠 前田
Hironori Hara
裕紀 原
Masami Kubota
昌実 久保田
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Kubota Corp
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Kubota Corp
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Abstract

(57)【要約】 【構成】 ガス導入手段により、成膜チャンバへ所定の
圧力で成膜ガス(C22)を導入し、同時に、非成膜ガ
ス(Ar)をたとえば放電限界下限ガス圧よりも十分に
高い圧力でスパイク導入し、プラズマ生成手段によりプ
ラズマを発生させる。そのまま成膜ガスを供給し続けて
被処理体の成膜を行う。成膜を終了するときは、成膜ガ
スの供給を止め、プラズマ放電を終える。そして、繰り
返し被処理体を成膜する際には、再び成膜ガスを導入す
ると同時に非成膜ガスをスパイク導入してプラズマを発
生させ、成膜を行う。 【効果】 放電開始時に高い圧力の成膜ガスを導入しな
くても確実にプラズマを発生させることができる。した
がって、厚くて質の悪い膜の堆積を防止することがで
き、パーティクルの発生を減少させることができるの
で、被処理体の品質を向上できる。さらに、装置のメン
テナンスが容易となる。

Description

【発明の詳細な説明】
【0001】
【産業上の利用分野】この発明は成膜装置に関し、特に
たとえばハードディスク,半導体装置,LCD,機械部
品または刃物等の被処理体に対してCVD法により成膜
する成膜装置に関する。
【0002】
【従来の技術】この種の従来の成膜装置では、成膜チャ
ンバ内に成膜ガスを所定圧力で導入し、これをプラズマ
生成装置でプラズマ化して被処理体の表面に堆積させる
ようにしていた。そして、放電の初期段階には、プラズ
マを効率よく発生させるために、成膜チャンバ内のガス
圧を高めに設定していた。
【0003】
【発明が解決しようとする課題】この従来技術では、プ
ラズマ放電開始時から高い圧力の成膜ガスを導入してい
たので、プラズマ放電が不安定な成膜初期に、性能およ
び品質的に劣る膜が多量に形成されるという問題があっ
た。つまり、成膜初期には、良好な性能および品質が得
られるエネルギレベルよりも小さいエネルギレベルしか
有しないプラズマによって膜の堆積が生じるため膜の密
着性が悪くなり、膜が剥離し易くなっていた。また、成
膜チャンバの内壁等にもこの質の悪い膜が堆積されるた
め、パーティクルが発生し易くなっていた。
【0004】それゆえに、この発明の主たる目的は、放
電の初期に高い圧力の成膜ガスを導入しなくても、確実
にプラズマを発生させることができ、かつ、質の悪い膜
の形成を防止することができる、成膜装置を提供するこ
とである。
【0005】
【課題を解決するための手段】この発明は、被処理体を
収容する成膜チャンバ、非成膜ガスおよび成膜ガスを成
膜チャンバへ導入するガス導入手段、非成膜ガスおよび
成膜ガスをプラズマ化するプラズマ生成手段、および非
成膜ガスおよび成膜ガスの圧力を制御する圧力制御手段
を備え、成膜ガスの導入初期に非成膜ガスをスパイク導
入することによってプラズマを発生させて、被処理体に
対して成膜する、成膜装置である。
【0006】
【作用】放電の開始時に、ガス導入手段により成膜チャ
ンバへ所定の圧力で成膜ガスを導入し、同時に、非成膜
ガスをたとえば放電限界下限ガス圧よりも十分に高い圧
力でスパイク導入し、プラズマ生成手段によりプラズマ
を発生させる。そして、そのまま所定の圧力で成膜ガス
を供給し続けてプラズマ放電を安定持続させるととも
に、被処理体の成膜を行う。成膜を終了するときは、成
膜ガスの供給を止め、プラズマ放電を終了させる。そし
て、繰り返し次の被処理体を成膜する際には、再び成膜
ガスを導入すると同時に非成膜ガスをスパイク導入して
プラズマを発生させ、成膜を行う。
【0007】
【発明の効果】この発明によれば、成膜ガスの導入と同
時に非成膜ガスをスパイク導入するようにしたので、放
電の開始時に高い圧力の成膜ガスを導入しなくても、確
実にプラズマを発生させることができる。したがって、
成膜初期に性能および品質において劣る膜が多量に堆積
するのを防止することができ、また、パーティクルの発
生を減少させることができるので、被処理体の品質を向
上することができる。さらに、装置のメンテナンスが容
易となる。
【0008】また、成膜ガスを一定圧力で供給すればよ
いので、ガス制御が簡単であり、さらに、成膜時以外は
ガスの供給を行わないので、ガスを有効に利用すること
ができる。
【0009】この発明の上述の目的,その他の目的,特
徴および利点は、図面を参照して行う以下の実施例の詳
細な説明から一層明らかとなろう。
【0010】
【実施例】図1を参照して、この実施例の成膜装置10
は、たとえばハードディスクの製造工程において、搬送
機12によって順次搬送される基板14にダイアモンド
ライクカーボン(DLC)膜等のような保護膜を成膜す
るものである。
【0011】ここで、搬送機12は、開口16aを有す
るケーシング16を含み、ケーシング16の内部には、
基板14を搬送する搬送部18が設けられる。搬送部1
8は、上下方向へ変位可能な保持部20を含み、保持部
20の基部には鍔22が形成され、鍔22の上面にはO
リング等のような環状のシール材24が装着される。
【0012】成膜装置10は、基板14の表面に成膜す
るプラズマCVD装置(以下、単に「CVD装置」とい
う。)26を含む。CVD装置26は、基板14を収容
する成膜チャンバ28を含み、成膜チャンバ28の互い
に対向する2つの側面には開口28aが形成され、上面
には排気口28bが形成され、下面には開口28cが形
成される。そして、各開口28aにはプラズマ生成装置
30が取り付けられ、排気口28bには真空ポンプ等の
ような図示しない圧力制御手段(排気手段)が接続され
る。
【0013】プラズマ生成装置30は、たとえば米国特
許第5,858,477号公報において開示されたよう
な周知のものであり、図2からよくわかるように、ガス
導入部32およびプラズマ生成部34を含む。ガス導入
部32は導入管36を含み、導入管36の先端にはプラ
ズマ生成部34を構成するRF電極38が形成される。
また、RF電極38の先方にはプラズマ生成領域を囲む
ようにして磁石40が配置され、さらにその先方にはグ
リッド42が配置される。
【0014】また、ガス導入部32の導入管36には、
図1に示すように、図示しないガス供給源からの成膜ガ
スを導く管路44aと非成膜ガスを導く管路44bとが
接続され、管路44aには、ガス流量を制御するための
マスフローコントローラ(MFC)46が設けられ、管
路44bには、非成膜ガスをスパイク導入すなわち短時
間に高圧で導入するためのピエゾバルブ48が設けられ
る。さらに、管路44aにおけるマスフローコントロー
ラ(MFC)46および管路44bにおけるピエゾバル
ブ48の下流側には、ガスの供給または停止を切り替え
るためのバルブ50が設けられる。なお、ピエゾバルブ
48は、トグル式の手動バルブ等のような瞬間的に開閉
できる他のバルブに置き換えられてもよい。
【0015】そして、ガス導入部32には、成膜ガスお
よび非成膜ガスが、バルブ50が開かれることによっ
て、供給され、RF電極38にはRF電源52から電力
が印加される。したがって、ガス導入部32からプラズ
マ生成部34にガス(成膜ガスおよび非成膜ガス)が導
入されると、そのガスがプラズマ化され、磁石40によ
って作られる双曲線形磁場54およびグリッド42を通
して成膜チャンバ28内へ導入されることになる。
【0016】なお、基板14にDLC膜を成膜するため
には、アセチレン,メタン,エタン,エチレン,ベンゼ
ンまたはトルエン等のような炭化水素系のガスが成膜ガ
スとして用いられ、プラズマ放電の発生のためには、ア
ルゴン,ヘリウムまたはネオン等の不活性ガス等が非成
膜ガスとして用いられる。
【0017】成膜装置10は、成膜チャンバ28の開口
28cが搬送機12の開口16aに位置的に対応するよ
うにして、搬送機12に固定される。これにより、搬送
機12と成膜チャンバ28とが連通され、CVD装置2
6内へ基板14を搬送するための搬送路56が得られ
る。
【0018】以下には、図3に従って、成膜装置10を
用いて基板14にDLC膜を成膜する方法を説明する。
なお、この実施例では,成膜ガスとしてアセチレン(C
22)を、非成膜ガスとしてアルゴン(Ar)を用いる
ものとする。
【0019】図1に示すように、搬送機12の保持部2
0を上昇させて、保持部20に固定された基板14を成
膜チャンバ28内に搬入する。なお、保持部20を上昇
させると、鍔22に装着されたシール材24が搬送機1
2のケーシング16に圧接されて、搬送路54が封鎖さ
れるので、成膜時にアセチレンガスおよびアルゴンガス
の漏洩は生じない。
【0020】それとともに、管路44aおよび44bの
バルブ50を開放し、管路44aから一定流量のアセチ
レンガスを導入すると同時に、ピエゾバルブ48によっ
て管路44bから所定量のアルゴンガスを瞬間的に導入
する。つまり、アセチレンガスを基板14の成膜に適し
たガス圧(約1〜3mTorr)で導入すると同時に、
アルゴンガスをプラズマ放電下限ガス圧(約0.1〜1
mTorr)よりも十分に高いガス圧(約1〜10mT
orr)でスパイク導入する。そして、このスパイク導
入のタイミングに合わせてRF電極38に電力(約20
0〜300W)を印加し、プラズマを発生させる。
【0021】そして、管路44bのバルブ50を閉鎖す
る一方で、管路44aのバルブ50を開放したままと
し、アセチレンガスを所定の圧力でそのまま供給し続け
て、プラズマ放電を安定持続させながら基板14に対し
て成膜する。
【0022】成膜が終わると、基板14を成膜チャンバ
28から搬出するとともに、管路44aのバルブ50を
閉鎖してアセチレンガスの供給を停止する。このよう
に、基板14の成膜時以外は成膜ガスおよび非成膜ガス
の供給は行われない。
【0023】そして、次に処理する基板14が搬送機1
2より搬送されてくると、上述のように、再び基板14
を成膜チャンバ28に搬入するとともに、アセチレンガ
スの導入と同時にアルゴンガスをスパイク導入して、プ
ラズマを発生させ、成膜を行う。
【0024】この実施例によれば、成膜ガスの導入と同
時に非成膜ガスをスパイク導入することによってプラズ
マを発生させるようにしたので、放電の開始時に高い圧
力の成膜ガスを導入しなくてもよい。したがって、成膜
初期に性能および品質において劣る膜が多量に堆積する
のを防止することができ、また、パーティクルの発生を
減少させることができるので、基板14の品質を向上す
ることができる。さらに、成膜装置10自体のメンテナ
ンスが容易となる。
【0025】また、成膜ガスを一定圧力で供給すればよ
いので、ガス制御が簡単であり、さらに、成膜時以外は
ガスの供給を行わないので、ガスを有効に利用すること
ができる。
【0026】なお、上述の実施例では、この発明をハー
ドディスク基板14に対する成膜に適用した場合を示し
たが、この発明は、半導体装置,LCD,機械部品また
は刃物等のような他の被処理体に対する成膜にも同様に
適用できる。
【図面の簡単な説明】
【図1】この発明の一実施例を示す図解図である。
【図2】図1実施例で用いられるプラズマ生成装置を示
す図解図である。
【図3】ガス圧の経時変化を示すタイミングチャートで
ある。
【符号の説明】
10 …成膜装置 12 …搬送機 14 …基板 26 …プラズマCVD装置 28 …成膜チャンバ 30 …プラズマ生成装置 46 …マスフローコントローラ 48 …ピエゾバルブ 50 …バルブ
───────────────────────────────────────────────────── フロントページの続き (72)発明者 早川 義人 兵庫県伊丹市奥畑5丁目10番地 株式会社 クボタ内 (72)発明者 前田 誠 兵庫県伊丹市奥畑5丁目10番地 株式会社 クボタ内 (72)発明者 原 裕紀 兵庫県伊丹市奥畑5丁目10番地 株式会社 クボタ内 (72)発明者 久保田 昌実 兵庫県伊丹市奥畑5丁目10番地 株式会社 クボタ内 Fターム(参考) 4K030 AA09 AA16 BA28 EA03 FA03 KA30 KA41 LA19 5F045 AA08 AB07 AC07 AC15 AC16 AC17 DP09 EE04 EE14 EE19 EH12 EH16

Claims (1)

    【特許請求の範囲】
  1. 【請求項1】被処理体を収容する成膜チャンバ、 非成膜ガスおよび成膜ガスを前記成膜チャンバへ導入す
    るガス導入手段、 前記非成膜ガスおよび前記成膜ガスをプラズマ化するプ
    ラズマ生成手段、および前記非成膜ガスおよび前記成膜
    ガスの圧力を制御する圧力制御手段を備え、 前記成膜ガスの導入初期に前記非成膜ガスをスパイク導
    入することによってプラズマを発生させて、前記被処理
    体に対して成膜する、成膜装置。
JP2000018886A 2000-01-27 2000-01-27 成膜装置 Withdrawn JP2001207268A (ja)

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JP2014051738A (ja) * 2012-09-05 2014-03-20 Asm Ip Holding Bv プラズマ生成を安定化させる方法
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