TW201833364A - 使用熱絲化學氣相沉積來沉積可流動碳膜的方法 - Google Patents

使用熱絲化學氣相沉積來沉積可流動碳膜的方法 Download PDF

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TW201833364A
TW201833364A TW106140662A TW106140662A TW201833364A TW 201833364 A TW201833364 A TW 201833364A TW 106140662 A TW106140662 A TW 106140662A TW 106140662 A TW106140662 A TW 106140662A TW 201833364 A TW201833364 A TW 201833364A
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substrate
carbon layer
flowable
hydrogen
flowable carbon
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蘇克提 查特吉
蘭斯 史庫德
宣德 劉
普萊文Ｋ 那瓦卡
帕拉米特 曼納
亞伯亥吉特 馬里克
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美商應用材料股份有限公司
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Abstract

在某些實施例中，處理配置在熱絲化學氣相沉積(HWCVD)處理腔室的處理空間中的基板的方法包括：(a)提供含碳前驅物氣體進入處理空間中，由位在高於基板的表面第一距離處的入口提供含碳前驅物氣體進入處理空間中；(b)透過引導氫自由基至處理空間以破壞含碳前驅物分子中的氫-碳鍵好沉積可流動碳層在基板頂上，其中藉由在配置於處理空間中且在基板與入口上方的複數個細絲上流動含氫氣體來形成氫自由基。

Description

使用熱絲化學氣相沉積來沉積可流動碳膜的方法
本揭露內容的實施例大致關於可流動碳膜的方法。
可流動碳膜常用於半導體製造製程中以提供不具孔隙的間隙填充、低收縮率、高模數與高蝕刻選擇性。通常利用遠端電漿系統來形成可流動碳膜。遠端電漿(例如，處理腔室外形成的電漿)與準-遠端電漿(例如，與基板相同的處理腔室中離開基板一距離處形成的電漿)形成可傷害基板的表面的離子。
因此，本發明人已經提供沉積可流動碳膜的改良方法。
本文提供在熱絲化學氣相沉積(HWCVD)製程中沉積材料於基板上的方法。在某些實施例中，處理配置在熱絲化學氣相沉積(HWCVD)處理腔室的處理空間中的基板的方法包括：(a)提供含碳前驅物氣體進入處理空間中，由位在高於基板的表面第一距離處的入口提供含碳前驅物氣體進入處理空間中；(b)透過引導氫自由基至處理空間以破壞含碳前驅物分子中的氫-碳鍵好沉積可流動碳層在基板頂上，藉由在配置於處理空間中且在基板與入口上方的複數個細絲上流動含氫氣體來形成氫自由基。
在某些實施例中，揭露內容可實現於電腦可讀媒體中，電腦可讀媒體上儲存有當執行時會引起在處理腔室中執行方法的指令，方法包括任何本文所揭露的實施例。
下方描述本揭露內容的其他與進一步實施例。
本揭露內容的實施例提供用於沉積可流動碳膜的熱絲化學氣相沉積(HWCVD)處理技術。在一個示範性應用中，本揭露內容的實施例可有利地被用來沉積可流動碳膜而不離子轟擊基板。本揭露內容的實施例可有利地被用來透過熱絲化學氣相沉積(HWCVD)處理腔室沉積可流動碳膜，相較於遠端電漿系統，熱絲化學氣相沉積(HWCVD)處理腔室提供較高濃度的氫自由基來沉積可流動含矽膜。本揭露內容的實施例亦可有利地被用來透過熱絲化學氣相沉積(HWCVD)處理腔室沉積可流動碳膜，熱絲化學氣相沉積(HWCVD)處理腔室提供可用來固化可流動碳膜而無需額外固化能量(例如，透過應用紫外線(UV)光)的氫自由基。本揭露內容的實施例可有利地被用來轉換較厚層的沉積成為包括複數個薄沉積層接著原位氫自由基退火的循環製程。本揭露內容的實施例可改善較厚層的致密化。本揭露內容的實施例可改善高深寬比圖案填充的致密化。
第1圖描繪在熱絲化學氣相沉積(HWCVD)處理腔室中沉積可流動碳膜在基板頂上的方法100的流程圖。第2圖描繪根據本揭露內容的某些實施例用來執行第1圖的方法的說明性基板處理系統的示意側視圖。
方法100開始於步驟102，提供含碳前驅物氣體進入處理空間中，含碳前驅物氣體由位於基板的表面上方第一距離處的入口提供進入處理空間。
基板可為任何適當基板，諸如矽基板、III-V化合物基板、矽鍺(SiGe)基板、磊晶-基板、絕緣體上矽(SOI)基板、顯示器基板(諸如，液晶顯示器(LCD)、電漿顯示器、電致發光(EL)燈顯示器)、發光二極體(LED)基板、太陽能電池陣列、太陽能面板等等。在某些實施例中，基板可為半導體晶圓(諸如，200 mm、300 mm等等的矽晶圓)。在某些實施例中，基板可包括額外的半導體製造處理層，諸如介電層、金屬層等等。在某些實施例中，基板可為部分製成的半導體元件，諸如Logic、DRAM或Flash記憶體元件。此外，特徵(諸如，溝槽、介層洞等等)可形成在基板的一個或多個層中。
在某些實施例中，提供至處理空間的含碳前驅物氣體為具有通用化學式Cn H2n+2 的烷烴的至少一者。烷烴的實例為(但不限於)甲烷、乙烷、丙烷、丁烷、戊烷、己烷、庚烷或辛烷。在某些實施例中，含碳前驅物氣體為烯烴(例如，包含至少一個碳–碳雙鍵的未飽和烴)。烯烴的實例為(但不限於)乙烯、丙烯、丁烯、己烯、庚烯或辛烯。在某些實施例中，含碳前驅物氣體為炔烴(例如，包含至少一個碳–碳參鍵的未飽和烴)。炔烴的實例為(但不限於)乙炔(acetylene)、乙炔(ethyne)、丙炔、丁炔、己炔、庚炔或辛炔。在某些實施例中，提供至處理空間的含碳前驅物氣體為芳香烴。芳香烴的實例為(但不限於) 苯類、甲苯類、二甲苯類、三甲苯類、酚類、苯甲醚類、甲酚類、呋喃類、苯胺類、吡啶類、吡咯類、酮類、亞胺類或芳香酯。基於處理腔室設計而選擇性調整含碳前驅物氣體的流動速率。舉例而言，可調整可流動膜沉積的表面區域、膜生長速率、腔室運作壓力與/或自由基引發劑氣源通量或上述之任何組合。舉例而言，含碳前驅物氣體的流動速率為約100至約1000 mg/分。
可流動碳膜的形成取決於沉積製程過程中基板的溫度與/或引導含碳前驅物氣體至處理空間處在基板表面上方的距離(即，第一距離)。基板的通常溫度係約-50℃至約150℃。透過配置在基板的表面上方約10至約50 mm處的入口引導含碳前驅物氣體至處理空間。
接著，在步驟104，透過引導氫自由基至處理空間破壞含碳前驅物氣體分子中的氫-碳鍵以沉積可流動碳層於基板頂上，氫自由基引發含碳前驅物分子的聚合。本文所用的可流動碳膜指的是以「底部向上」方式沉積在基板上的特徵中的碳膜(即，膜實質上沉積於所有區域中並自特徵的底部填充特徵至特徵的頂部，且有利地不在沉積於特徵中的膜材料中形成孔隙)。透過方法100沉積的可流動碳膜為碳與/或碳錯合物(carbon complexes)。
藉由流動含氫氣體在複數個加熱金屬絲或細絲上來形成氫自由基，複數個加熱金屬絲或細絲配置於處理空間中且在基板與入口上方或下方。複數個加熱金屬絲或細絲的溫度係約1300℃至約2400℃。
在某些實施例中，可輸送例如氬與/或氦的額外氣體至氫自由基處理空間以提高包含熱金屬絲細絲的腔的清除效率。提高清除效率可降低活性物種的反向擴散，這會快速地劣化熱金屬絲細絲的品質。
在某些實施例中，含氫氣體為氫(H2 )氣體、氨(NH3 )氣體或上述之組合的一或多者。在某些實施例中，其中含氫氣體為氨(NH3 )氣體或氨(NH3 )氣體與氫(H2 )氣體的組合，透過引導氫自由基與氨(NH3 )自由基至處理空間來破壞含碳前驅物氣體分子中的氫-碳鍵。含氫氣體的流動速率係約1至約10000每分鐘標準立方厘米(sccm)。
第3圖顯示利用含碳前驅物(諸如，烷烴、烯烴、炔烴與/或芳香烴與/或上述之混合物的任何)形成可流動碳層的反應製程300。含碳前驅物302暴露至來自熱絲來源的氫自由基304。氫自由基的能量破壞含碳前驅物302中的氫-碳鍵而造成可流動碳膜306。如下方進一步討論般，可透過氫自由基的能量來固化可流動碳膜306。在某些實施例中，可透過氫自由基的能量與/或暴露至UV光來固化可流動碳膜306以形成固化碳膜308。
可在沉積可流動碳層之後固化可流動碳層。在某些實施例中，僅應用UV光至可流動碳層而固化可流動碳層。舉例而言，在某些實施例中，可流動碳層的固化發生在0.5-2000托的腔室壓力與1分至30分約100-1000 sccm下周遭Ar的暴露時間。在某些實施例中，透過應用氫自由基能量來固化可流動碳層。舉例而言，在某些實施例中，氫氣流係0.1-10000 sccm、腔室壓力係50毫托至5托、細絲溫度係1300-2400°C而暴露時間係約10-600秒。在某些實施例中，透過應用氫自由基能量與/或應用UV光至可流動碳層來固化可流動碳層。
在某些實施例中，在基板上形成可流動碳層的第一層。第一層可具有小於可流動碳層的最終厚度的厚度。舉例而言，第一層可具有約10至約100埃的厚度。可透過應用氫自由基能量與/或施加UV光至可流動碳層來固化第一層。可重複沉積第一層並接著固化第一層的製程直到形成具有預定厚度的可流動碳層為止。在某些實施例中，在形成具有預定厚度的可流動碳層之後，可藉由施加UV光至具有預定厚度的可流動碳層來進一步固化具有預定厚度的可流動碳層。
如參照第2圖描述於下，HWCVD處理腔室226包括複數個金屬絲210或複數個細絲。複數個金屬絲210被加熱至適合分離氫氣的溫度，產生與含碳前驅物氣體反應並沉積可流動碳層於基板230頂上的氫離子。舉例而言，複數個金屬絲210可被加熱至約1300℃至約2400℃的溫度。
第2圖描繪適合用於根據本揭露內容的實施例的HWCVD處理腔室226(即，處理腔室226)的示意側視圖。處理腔室226通常包括具有內部處理空間204的腔室主體202。複數個金屬絲210配置於腔室主體202中(例如，內部處理空間204中)。複數個金屬絲210亦可為橫跨內部處理空間204來回路過的單一金屬絲。複數個金屬絲210包括HWCVD來源。複數個金屬絲210通常由鎢所製成。亦可使用其他高溫材料來取代鎢。適當替代材料包括鉭、銥、碳化鉭、碳化鉿與碳化鉭鉿。某些實施例包括配置於複數個金屬絲210上的塗層。某些塗層材料包括配置於鎢金屬絲上的鉭、銥、碳化鉭與碳化鉿。複數個金屬絲210由支撐結構(未圖示)夾持在定位以在被加熱至高溫時保持金屬絲繃緊並提供電接觸至金屬絲。在某些實施例中，金屬絲張力器被用來允許金屬絲保持繃緊通過多個加熱與冷卻循環，否則多個加熱與冷卻循環有可能允許未拉緊的金屬絲由於熱膨脹與塑性變形而下垂。電源供應器212耦接至複數個金屬絲210以提供電流來加熱複數個金屬絲210。基板230可配置在HWCVD來源(例如，複數個金屬絲210)下，例如在基板支撐件228上。基板支撐件228可為固定的以用於靜止沉積，或可旋轉與/或線性移動(如箭號205所示)以用於基板230通過HWCVD來源下方時的動態沉積。
腔室主體202進一步包括一個或多個氣體入口(圖示一個氣體入口232)以提供一個或多個處理氣體，與至真空泵的一個或多個出口(圖示兩個出口234)以維持適當運作壓力於處理腔室226中並移除過量的處理氣體與/或處理副產物。氣體入口232可注入噴頭233(如圖所示)或其他適當的氣體分配元件，以在複數個金屬絲210或基板230上實質上均勻地分配氣體。
在某些實施例中，可提供一個或多個遮蔽件220以使腔室主體202的內部表面上的多餘沉積達到最小。替代或結合，可使用一個或多個腔室襯裡222使清洗更容易。使用遮蔽件與/或襯裡可排除或降低多餘清洗氣體(例如，溫室氣體NF3 )的使用。遮蔽件220與/或腔室襯裡222通常保護腔室主體的內部表面免於不樂見地收集由於處理氣體流動於腔室中的沉積材料。遮蔽件220與腔室襯裡222可為可移除、可替換與/或可清洗的。遮蔽件220與腔室襯裡222可設以覆蓋腔室主體可能受到塗覆的所有區域，包括(但不限於)複數個金屬絲210周圍與塗覆隔室的任何或所有壁上。一般而言，遮蔽件220與腔室襯裡222可由鋁(Al)所製造並可具有粗糙表面以提高沉積材料的黏著以避免沉積材料的剝落。可用任何適當方式將遮蔽件220與腔室襯裡222安裝在處理腔室的任何或所有區域中，例如HWCVD來源周圍。在某些實施例中，可移除來源、遮蔽件與襯裡進行保養並藉由打開沉積腔室的上部進行清洗。舉例而言，在某些實施例中，沉積腔室的蓋或頂部可沿著凸緣238耦接至沉積腔室的主體，而凸緣238支撐蓋並提供表面以固持蓋至沉積腔室的主體。
控制器206可耦接至處理腔室226的多個部件以控制多個部件的運作。雖然示意性地圖示耦接至處理腔室226，但控制器可操作性地連接至可由控制器所控制的任何部件(諸如，電源供應器212、耦接至氣體入口232的氣體供應器(未圖示)、耦接至出口234的真空泵與/或節流閥(未圖示)、基板支撐件228等等)以根據本文揭露的方法控制HWCVD沉積製程。控制器206通常包括中央處理單元(CPU) 208、記憶體213與CPU 208的支援電路211。控制器206可直接或透過與特定支援系統部件相關的其他電腦或控制器(未圖示)來控制處理腔室226。控制器206可為能用於工業設定以控制多個腔室與子處理器的通用電腦處理器的任何形式的一者。CPU 208的記憶體或電腦可讀媒體213可為現成記憶體(諸如，隨機存取記憶體(RAM)、唯讀記憶體(ROM)、軟碟、硬碟、快閃或者本端或遠端的數位儲存的任何其他形式)的一者或多者。記憶體213可為上方儲存有指令的非暫態電腦可讀媒體，在執行指令時可造成處理腔室226執行本文所述的處理配置在熱絲化學氣相沉積(HWCVD)處理腔室的處理空間中的基板的方法。支援電路211耦接至CPU 208以用傳統方式支援處理器。這些電路包括快取、電源供應器、時脈電路、輸入/輸出電路與子系統等等。本文所述的本發明方法可儲存於記憶體213中作為軟體程序214，軟體程序214可被執行或調用以將控制器變成特定用途控制器以用本文所述方式控制處理腔室226的運作。軟體程序亦可儲存於第二CPU (未圖示)中與/或由第二CPU所執行，第二CPU位於由CPU 208所控制的硬體的遠端。
雖然上文針對本揭露內容的實施例，但可在不悖離本揭露內容的基本範圍下設計出揭露內容的其他與進一步實施例。
100‧‧‧方法
102、104‧‧‧步驟
202‧‧‧腔室主體
204‧‧‧內部處理空間
205‧‧‧箭號
206‧‧‧控制器
208‧‧‧CPU
210‧‧‧金屬絲
211‧‧‧支援電路
212‧‧‧電源供應器
213‧‧‧記憶體
214‧‧‧軟體程序
220‧‧‧遮蔽件
222‧‧‧腔室襯裡
226‧‧‧處理腔室
228‧‧‧基板支撐件
230‧‧‧基板
232‧‧‧氣體入口
233‧‧‧噴頭
234‧‧‧出口
238‧‧‧凸緣
300‧‧‧反應製程
302‧‧‧含碳前驅物
304‧‧‧氫自由基
306‧‧‧可流動碳膜
308‧‧‧固化碳膜
可藉由參照描繪於附圖中的本揭露內容的說明性實施例理解簡短概述於上方及詳細討論於下方的本揭露內容的實施例。然而，附圖僅描繪此揭露內容的典型實施例並因此不被視為限制此揭露內容的範圍，因為此揭露內容可允許其他等效性實施例。
第1圖描繪根據本揭露內容的某些實施例沉積可流動碳膜的方法的流程圖。
第2圖描繪根據本揭露內容的某些實施例的HWCVD處理腔室的示意側視圖。
第3圖顯示根據本揭露內容的某些實施例利用含碳前驅物形成可流動碳層的反應製程300。
為了促進理解，已經儘可能利用相同的元件符號來標示圖式中共有的相同元件。圖式並非按照比例繪製且為了清楚起見可加以簡化。一個實施例的元件與特徵可有利地併入其他實施例而毋需進一步列舉。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無

Claims (18)

  1. 一種處理一基板的方法，該基板配置於一熱絲化學氣相沉積(HWCVD)處理腔室的一處理空間中，該方法包括： (a)提供一含碳前驅物氣體進入該處理空間中，該含碳前驅物氣體由一位在該基板的一表面上方或下方一第一距離處的入口提供進入該處理空間中；及 (b)透過引導數個氫自由基至該處理空間來破壞該含碳前驅物的數個分子中的數個氫-碳鍵以沉積一可流動碳層於該基板頂上，其中該些氫自由基係藉由在複數個金屬絲或細絲上流動一含氫氣體而加以形成，該複數個金屬絲或細絲配置於該處理空間中且在該基板與該入口上方或下方。
  2. 如請求項1所述之方法，其中該含碳前驅物氣體為一烷烴、一烯烴、一炔烴或一芳香烴的至少一者。
  3. 如請求項2所述之方法，其中該烷烴為甲烷、乙烷、丙烷、丁烷、戊烷、己烷、庚烷或辛烷，該烯烴為乙烯、丙烯、丁烯、己烯、 庚烯或辛烯的一者，該炔烴為乙炔、乙炔、丙炔、丁炔、己炔、庚炔或辛炔的一者，而該芳香烴為苯類、甲苯類、二甲苯類、三甲苯類、酚類、苯甲醚類、甲酚類、呋喃類、苯胺類、吡啶類、吡咯類、酮類、亞胺類或芳香酯的一者。
  4. 如請求項1至3任何一項所述之方法，其中該第一距離係該基板的該表面上約10 mm至約50 mm。
  5. 如請求項1至3任何一項所述之方法，其中該基板的一溫度係約50℃至約150℃。
  6. 如請求項1至3任何一項所述之方法，其中該複數個金屬絲或細絲的一溫度係約1300℃至約2400℃。
  7. 如請求項1至3任何一項所述之方法，其中具有下列至少一者： 該含氫氣體的一流動速率係約0.1 sccm至約10000 sccm；或 該含碳前驅物氣體的一流動速率係約1 mg/分至約1000 mg/分。
  8. 如請求項1至3任何一項所述之方法，進一步包括在沉積該可流動碳層之後固化該可流動碳層。
  9. 如請求項8所述之方法，進一步包括施加UV光至該可流動碳層以固化該可流動碳層。
  10. 如請求項8所述之方法，進一步包括透過應用氫自由基能量來固化該可流動碳層。
  11. 如請求項8所述之方法，進一步包括透過應用氫自由基能量與/或施加UV光至該可流動碳層來固化該可流動碳層。
  12. 如請求項1至3任何一項所述之方法，進一步包括： (c)沉積該可流動碳層的一第一層； (d)透過應用氫自由基能量接著藉由施加UV光至該可流動碳層來固化該可流動碳層的該第一層；及 (e)重複(c)-(d)以沉積該可流動碳層至一預定厚度。
  13. 如請求項12所述之方法，進一步包括： (f)透過應用UV光來固化沉積至一預定厚度的該可流動碳層。
  14. 如請求項12所述之方法，進一步包括： (f)在重複(c)、(d)與(f)之前透過應用UV光來固化該可流動碳層的該第一層。
  15. 一種處理一基板的方法，該基板配置於一熱絲化學氣相沉積(HWCVD)處理腔室的一處理空間中，該方法包括： (a)提供一含碳前驅物氣體進入該處理空間中，該含碳前驅物氣體由一位在該基板的一表面上方或下方一第一距離處的入口提供進入該處理空間中； (b)透過引導數個氫自由基至該處理空間來破壞該含碳前驅物的數個分子中的數個氫-碳鍵以沉積一可流動碳層於該基板頂上，其中該些氫自由基係藉由在複數個金屬絲或細絲上流動一含氫氣體而加以形成，該複數個金屬絲或細絲配置於該處理空間中且在該基板與該入口上方或下方； (c)沉積該可流動碳層的一第一層； (d)透過應用氫自由基能量與/或施加UV光至該可流動碳層來固化該可流動碳層的該第一層；及 (e)重複(c)-(d)以沉積該可流動碳層至一預定厚度。
  16. 如請求項15所述之方法，進一步包括(f)透過應用UV光來固化沉積至一預定厚度的該可流動碳層。
  17. 如請求項15所述之方法，其中該含碳前驅物氣體進一步包括甲烷、乙烷、丙烷、丁烷、戊烷、己烷、庚烷或辛烷、乙烯、丙烯、丁烯、己烯、庚烯或辛烯、乙炔、乙炔、丙炔、丁炔、己炔、庚炔或辛炔、苯類、甲苯類、二甲苯類、三甲苯類、酚類、苯甲醚類、甲酚類、呋喃類、苯胺類、吡啶類、吡咯類、酮類、亞胺類或芳香酯的至少一者。
  18. 一種上方儲存有數個指令的非暫態電腦可讀媒體，在執行該些指令時可造成一處理腔室執行一種如請求項1至3或15至17任何一項所述之處理一基板的方法，該基板配置於一熱絲化學氣相沉積(HWCVD)處理腔室的一處理空間中。
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