TW201829825A - 使用熱絲化學氣相沉積來沉積可流動含矽膜的方法 - Google Patents

使用熱絲化學氣相沉積來沉積可流動含矽膜的方法 Download PDF

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TW201829825A
TW201829825A TW106140674A TW106140674A TW201829825A TW 201829825 A TW201829825 A TW 201829825A TW 106140674 A TW106140674 A TW 106140674A TW 106140674 A TW106140674 A TW 106140674A TW 201829825 A TW201829825 A TW 201829825A
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flowable
ruthenium
containing layer
substrate
hydrogen
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TW106140674A
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蘇克提 查特吉
蘭斯 史庫德
宣德 劉
普萊文Ｋ 那瓦卡
帕拉米特 曼納
亞伯亥吉特 馬里克
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美商應用材料股份有限公司
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Publication of TW201829825A publication Critical patent/TW201829825A/zh

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Abstract

在某些實施例中，處理配置在熱絲化學氣相沉積(HWCVD)處理腔室的處理空間中的基板的方法包括：(a)提供含矽前驅物氣體進入處理空間中，由位在高於基板的表面第一距離處的入口提供含矽前驅物氣體進入處理空間中；(b)透過引導氫自由基至處理空間以破壞含矽前驅物分子中的氫-矽鍵以沉積可流動含矽層在基板頂上，其中藉由使含氫氣體流經配置於處理空間中且在基板與入口上方的複數個金屬絲來形成氫自由基。

Description

使用熱絲化學氣相沉積來沉積可流動含矽膜的方法
本揭露內容的實施例大致關於可流動含矽膜的方法。
可流動含矽膜常用於半導體製造製程中以提供不具孔隙的間隙填充、低收縮率、高模數與高蝕刻選擇性。通常利用遠端電漿系統來形成可流動含矽膜。
因此，本發明人已經提供沉積可流動含矽膜的改良方法。
本文提供在熱絲化學氣相沉積(HWCVD)製程中沉積材料於基板上的方法。在某些實施例中，處理配置在熱絲化學氣相沉積(HWCVD)處理腔室的處理空間中的基板的方法包括：(a)提供含矽前驅物氣體進入處理空間中，其中由位在基板的表面上方第一距離處的入口提供含矽前驅物氣體進入處理空間中；(b)透過引導氫自由基至處理空間以破壞含矽前驅物分子中的氫-矽鍵，以沉積可流動含矽層在基板頂上，其中藉由在配置於處理空間中且在基板與入口上方的複數個金屬絲上流動含氫氣體來形成氫自由基。
在某些實施例中，本揭露內容可實現於電腦可讀媒介中，電腦可讀媒介上儲存有當執行時會引起在處理腔室中執行方法的指令，該方法包括任何本文所揭露的實施例。
下方描述本揭露內容的其他與進一步實施例。
本揭露內容的實施例提供用於沉積可流動含矽膜的熱絲化學氣相沉積(HWCVD)處理技術。在一個示範性應用中，本揭露內容的實施例可有利地被用來沉積可流動含矽膜而不離子轟擊基板。遠端電漿(例如，處理腔室外形成的電漿)與準-遠端電漿(例如，與基板相同的處理腔室中離開基板一距離處形成的電漿)形成可傷害基板的表面的離子。本揭露內容的實施例可有利地被用來透過熱絲化學氣相沉積(HWCVD)處理腔室沉積可流動含矽膜，相較於遠端電漿系統，熱絲化學氣相沉積(HWCVD)處理腔室提供較高濃度的氫自由基來沉積可流動含矽膜。本揭露內容的實施例亦可有利地被用來透過熱絲化學氣相沉積(HWCVD)處理腔室沉積可流動含矽膜，熱絲化學氣相沉積(HWCVD)處理腔室提供可用來固化可流動含矽膜而無需額外固化能量(例如，透過應用紫外線(UV)光)的氫自由基。
第1圖描繪根據本揭露內容的實施例沉積可流動含矽膜的方法100的流程圖。揭露內容的實施例包括在熱絲化學氣相沉積(HWCVD)處理腔室中沉積可流動含矽膜於基板頂上。第2圖描繪根據本揭露內容的某些實施例用來執行第1圖的方法的說明性基板處理系統的示意側視圖。可藉由方法100與/或第2圖的基板處理系統製造第3-7圖的任何實施例。
方法100開始於步驟102，提供含矽前驅物氣體進入處理空間中，其中含矽前驅物氣體由位於基板的表面上方第一距離處的入口提供進入處理空間。
基板可為任何適當基板，如矽基板、III-V族化合物基板、矽鍺(SiGe)基板、磊晶-基板、絕緣體上矽(SOI)基板、顯示器基板(如液晶顯示器(LCD)、電漿顯示器、電致發光(EL)燈顯示器)、發光二極體(LED)基板、太陽能電池陣列、太陽能面板等等。在某些實施例中，基板可為半導體晶圓(如，200 mm、300 mm等等的矽晶圓)。在某些實施例中，基板可包括額外的半導體製造處理層，如介電層、金屬層等等。在某些實施例中，基板可為部分製成的半導體元件，如邏輯、DRAM或快閃記憶體元件。此外，特徵(如，溝槽、介層洞等等)可形成在基板的一或更多個層中。
提供至處理空間的含矽前驅物氣體取決於即將沉積的可流動含矽層。可流動含矽層為純矽(Si) (例如，由矽所構成的層或主要由矽所構成的層)、碳氧化矽(SiOC)、碳化矽(SiC)、氮化矽(SiN)或氧氮化矽(SiON)的至少一者。
在可流動含矽層為純矽(Si)的實施例中，含矽前驅物氣體為矽烷、二矽烷、三矽烷、四矽烷、五矽烷、十二氯四矽烷或十二氯五矽烷氣體的至少一者。在可流動含矽層為碳氧化矽(SiOC)的實施例中，含矽前驅物氣體為四甲氧基矽烷、四乙氧基矽烷、三甲氧基矽烷、三乙氧基矽烷、四甲基二矽氧烷、四甲基二矽氧烷或八甲基環四矽氧烷氣體的至少一者。在可流動含矽層為碳化矽(SiC)的實施例中，含矽前驅物氣體為三矽戊烷或四乙烯矽烷氣體。在可流動含矽層為氮化矽(SiN)的實施例中，含矽前驅物氣體為三矽烷基胺、矽烷、二矽烷或三矽烷的至少一者以及氨與/或氮氣的至少一者。額外的前驅物可選擇性地與含矽前驅物氣體混合並一起輸送。或者，可透過一或更多個入口添加額外的前驅物以調變最終的膜化學計量。根據揭露內容的實施例包括添加含碳或含矽分子以產生具有可調整的Si：C比例的SiC。根據揭露內容的實施例包括添加含氮或含矽分子以產生具有可調整的Si：N比例的SiN。
含矽前驅物氣體的流動速率係約100至約1000 mg/分。
可流動含矽膜的形成取決於沉積製程過程中基板的溫度以及引導含矽前驅物氣體至處理空間處在基板表面上方的距離(即，第一距離)。額外的製程控制要素包括對腔室壓力、引發劑通量、單體流動與/或單體：引發劑比例變化的組合。基板的溫度係約-50℃至約150℃。
透過配置在基板的表面上方約10至約50 mm處的入口引導含矽前驅物氣體至處理空間。在某些實施例中，在可流動含矽層為純矽(Si)而含矽前驅物氣體為矽烷(SiH4 )、二矽烷(Si2 H6 )、三矽烷(Si3 H8 )、四矽烷(Si4 H10 )、五矽烷(Si5 H12 )、十二氯四矽烷(Si4 Cl10 )或十二氯五矽烷(Si5 Cl12 )的情況下，入口配置在基板的表面上方約10至約50 mm處。在可流動含矽層為碳氧化矽(SiOC)且含矽前驅物氣體為四甲氧基矽烷(TMOS)、四乙氧基矽烷(TEOS)、三甲氧基矽烷(TriMOS)、三乙氧基矽烷(TriEOS)、四甲基二矽氧烷(TMDSO)、六甲氧基二矽氮烷(HMDS-H)或八甲基環四矽氧烷(OMCTS)的至少一者的實施例中，入口配置在基板的表面上方約10至約50 mm處。沉積可流動Si的揭露內容的實施例可進一步包括轉換Si至SiO(氧電漿或熱退火)、SiC或SiON的轉換步驟。沉積可流動Si的揭露內容的實施例可進一步包括轉換Si至SiN的轉換步驟。轉換Si至SiN的揭露內容的實施例可使用去耦合電漿氮化(DPN)技術。在可流動含矽層為碳化矽(SiC)且含矽前驅物氣體為三矽戊烷或四乙烯矽烷或者矽烷、二矽烷、三矽烷、四矽烷、五矽烷、十二氯四矽烷或十二氯五矽烷與甲烷、丙烷、三矽戊烷或四乙烯矽烷的至少一者的氣體混合物的揭露內容的實施例中，入口配置在基板的表面上方約10至約50 mm處。在可流動含矽層為氮化矽(SiN)且含矽前驅物氣體為三矽烷基胺或者矽烷、二矽烷、三矽烷、四矽烷、五矽烷、十二氯四矽烷或十二氯五矽烷與三矽烷基胺或氨的至少一者的氣體混合物的揭露內容的實施例中，入口配置在基板的表面上方約10至約50 mm處。
接著，在步驟104，透過引導氫自由基至處理空間破壞含矽前驅物分子中的氫-矽鍵以沉積可流動含矽層於基板頂上。本文所用的可流動含矽膜指的是以「由下至上」方式(即，膜自特徵的底部填充特徵至特徵的頂部而不在沉積於特徵中的膜材料中形成孔隙)沉積在基板上的特徵中的含矽膜。藉由使含氫氣體流經複數個加熱金屬絲來形成氫自由基，該複數個加熱金屬絲配置於處理空間中且在基板與入口上方或下方。該複數個加熱金屬絲的溫度係約1300℃至約2400℃。在某些實施例中，含氫氣體的流動速率係約10至約1000 sccm。
在某些實施例中，含氫氣體為氫(H2 )氣體、氨(NH3 )氣體或上述之組合。在某些實施例中，其中含氫氣體為氨(NH3 )氣體或氨(NH3 )氣體與氫(H2 )氣體的組合，透過引導氫自由基與氨(NH3 )自由基(例如，NH、NH2 )至處理空間來破壞含矽前驅物分子中的氫-矽鍵。含氫氣體的流動速率係約10至約1000每分鐘標準立方公分(sccm)。
第3圖顯示利用矽烷、二矽烷、三矽烷、四矽烷、五矽烷、十二氯四矽烷或十二氯五矽烷前驅物或上述之組合的至少一者形成可流動矽層的反應製程300。如圖式所描繪，四矽烷前驅物302暴露至來自熱絲來源的氫自由基304。氫自由基的能量破壞四矽烷前驅物302中的氫-矽鍵而產生可流動矽膜306。如下方進一步論述，可透過氫自由基的能量與/或暴露至紫外線(UV)光與/或熱退火來固化可流動矽膜306以形成固化矽膜308。揭露內容的實施例包括利用暴露至紫外線(UV)光與/或快速熱退火。在已經完成沉積之後選擇性固化或緻密化可流動矽膜306。透過紫外線(UV)光與/或快速熱退火的固化與/或緻密化可改善膜參數，諸如密度、濕蝕刻速率與/或利用下游元件處理的相容性。
第4A圖顯示利用四乙烯矽烷前驅物形成可流動碳化矽層的反應製程400。四乙烯矽烷前驅物402暴露至來自熱絲來源的氫自由基404。氫自由基的能量破壞四乙烯矽烷前驅物402中氫與矽分子之間的鍵而造成可流動碳化矽膜406。如下方進一步論述般，可透過氫自由基的能量與/或暴露至UV光來固化可流動碳化矽膜406以形成固化碳化矽膜408。揭露內容的實施例包括透過暴露至紫外線(UV)光與/或快速熱退火進行固化。
第4B圖顯示根據本揭露內容的某些實施例利用三矽戊烷前驅物形成可流動碳化矽層的反應製程450。三矽戊烷前驅物452暴露至來自熱絲來源的氫自由基454。非意圖受限於理論，本文揭露實施例的發明人相信氫自由基的能量破壞三矽戊烷前驅物452中的氫-矽鍵而造成可流動矽膜456。如下方進一步論述般，可透過氫自由基的能量與/或暴露至UV光來固化可流動矽膜456以形成固化碳化矽膜458。揭露內容的實施例包括透過暴露至紫外線(UV)光與/或快速熱退火來進行固化以形成固化碳化矽膜458。
第4C圖顯示根據本揭露內容的某些實施例利用兩個前驅物氣體形成可流動碳化矽層的反應製程470。兩個前驅物氣體包括矽烷、二矽烷、三矽烷、四矽烷、五矽烷、十二氯四矽烷或十二氯五矽烷的至少一者與甲烷、丙烷、四乙烯矽烷或三矽戊烷氣體的至少一者。根據本揭露內容的某些實施例，藉由氫自由基來源分解兩個前驅物氣體。如所描繪般，三矽烷前驅物472與甲烷氣體暴露至來自熱絲來源的氫自由基476。非意圖受限於理論，本文揭露實施例的發明人相信氫自由基的能量破壞三矽烷前驅物472與甲烷474中的氫-矽鍵，造成可流動矽膜478。如下方進一步論述般，可透過氫自由基的能量與/或暴露至UV光來固化可流動矽膜478以形成固化碳化矽膜480。揭露內容的實施例包括透過暴露至紫外線(UV)光與/或快速熱退火來進行固化以形成固化碳化矽膜480。
第5A圖顯示利用三矽烷基胺前驅物形成可流動氮化矽層的反應製程550。三矽烷基胺前驅物552暴露至來自熱絲來源的氫自由基554。非意圖受限於理論，本文揭露實施例的發明人相信氫自由基的能量破壞三矽烷基胺前驅物552中的氫-矽鍵而造成可流動氮化矽膜556。如下方進一步論述般，可透過氫自由基的能量與/或暴露至UV光來固化可流動氮化矽膜556以形成固化氮化矽膜558。揭露內容的實施例包括透過暴露至紫外線(UV)光與/或快速熱退火來進行固化以形成固化氮化矽膜558。
第5B圖顯示根據本揭露內容的某些實施例利用兩個前驅物氣體形成可流動氮化物層的反應製程500。兩個前驅物氣體包括矽烷、二矽烷、三矽烷四矽烷、五矽烷、十二氯四矽烷或十二氯五矽烷的至少一者與/或三矽烷基胺、氨或氮的至少一者。根據本揭露內容的某些實施例，藉由氫自由基來源分解兩個前驅物氣體。如所描繪般，三矽烷前驅物502與氨氣504暴露至來自熱絲來源的氫自由基506。非意圖受限於理論，本文揭露實施例的發明人相信氫自由基的能量破壞三矽烷前驅物502與氨氣504中的氫-矽鍵，造成可流動氮化矽膜508。如下方進一步論述般，可透過氫自由基的能量與/或暴露至UV光來固化可流動矽膜508以形成固化碳化矽膜510。揭露內容的實施例包括透過暴露至紫外線(UV)光與/或快速熱退火來進行固化以形成固化碳化矽膜510。
第6圖顯示利用四甲氧基矽烷(TMOS)、四乙氧基矽烷(TEOS)、三甲氧基矽烷(TriMOS)、三乙氧基矽烷(TriEOS)、四甲基二矽氧烷(TMDSO)、六甲氧基二矽氮烷(HMDS-H)或八甲基環四矽氧烷(OMCTS)前驅物602形成可流動碳氧化矽層的反應製程600。四甲氧基矽烷、四乙氧基矽烷、三甲氧基矽烷、三乙氧基矽烷、四甲基二矽氧烷、六甲氧基二矽氮烷或八甲基環四矽氧烷(OMCTS)前驅物602暴露至來自熱絲來源的氫自由基604。非意圖受限於理論，本文揭露實施例的發明人相信氫自由基的能量破壞O-R鍵(氧-有機部分體鍵)，開始並允許TMOS、TEOS、TriMOS、TriEOS、TMDSO、HMDS-H或OMCTS前驅物602聚合，造成可流動碳氧化矽膜606。如下方進一步論述般，可透過氫自由基的能量與/或暴露至UV光來固化可流動碳氧化矽膜606以形成固化碳氧化矽膜608。在第6圖中顯示TEOS與TMOS前驅物。TriMOS、TriEOS、TMDSO、HMDS-H或OMCTS可經聚合並沉積成可流動碳氧化矽膜606。
可在沉積可流動含矽層之後固化可流動含矽層。在某些實施例中，僅應用UV光至可流動含矽層而固化可流動含矽層。舉例而言，在某些實施例中，可流動含矽層的固化發生在5-500托的腔室壓力與1分鐘至30分鐘在約100-1000 sccm周遭Ar中的暴露時間。在某些實施例中，透過應用氫自由基能量來固化可流動含矽層。舉例而言，在某些實施例中，氫氣流係5-500 sccm、腔室壓力係50毫托至5托、燈絲溫度係1300-2400°C而暴露時間係約10-600秒。在某些實施例中，透過應用氫自由基能量接著應用UV光至可流動含矽層來固化可流動含矽層。某些實施例包括熱退火(例如，快速熱退火)以固化本文所述的任何膜。對某些實施例而言，使用多個固化步驟(例如，快速熱退火與/或UV固化技術與製程的組合)係有利的。
在某些實施例中，在基板上形成可流動含矽層的第一層。第一層可具有小於可流動含矽層的最終厚度的厚度。舉例而言，第一層可具有約10至約100埃的厚度。可透過應用氫自由基能量接著應用UV光至可流動含矽層來固化第一層。可反覆沉積第一層並接著固化第一層的製程直到形成具有預定厚度的可流動含矽層為止。在某些實施例中，在形成具有預定厚度的可流動含矽層之後，可藉由施加UV光至具有預定厚度的可流動含矽層來進一步固化具有預定厚度的可流動含矽層。
如參照第2圖描述於下，HWCVD處理腔室226包括複數個金屬絲210。複數個金屬絲210(或複數個燈絲)被加熱至適合分離氫氣的溫度，產生與前驅物反應並沉積含矽膜於基板230頂上的氫離子。舉例而言，複數個金屬絲210可被加熱至約1300℃至約2400℃的溫度。
第2圖描繪適合用於根據本揭露內容的實施例的HWCVD處理腔室226(即，處理腔室226)的示意側視圖。處理腔室226通常包括具有內部處理空間204的腔室主體202。複數個金屬絲210配置於腔室主體202中(例如，內部處理空間204中)。複數個金屬絲210亦可為來回穿過整個內部處理空間204的單一金屬絲。複數個金屬絲210包括HWCVD來源。複數個金屬絲210通常由鎢所製成。亦可使用鉭、銥或其他高溫導體。舉例而言，碳化鉭(TaC)、碳化鉿(HfC)或碳化鉭鉿(TaHfC)可被用於揭露內容的實施例中。金屬絲210由支撐結構(未圖示)夾持在定位以在被加熱至高溫時保持金屬絲繃緊並提供電接觸至金屬絲。電源供應器212耦接至金屬絲210以提供電流來加熱複數個金屬絲210。基板230可配置在HWCVD來源(例如，複數個金屬絲210)下，例如在基板支撐件228上。基板支撐件228可為固定的以用於靜止沉積，或可移動(如箭號205所示)以用於基板230通過HWCVD來源下方時的動態沉積。
腔室主體202進一步包括一或更多個氣體入口(圖示一個氣體入口232)以提供一或更多個處理氣體，與至真空泵的一或更多個出口(圖示兩個出口234)以維持適當運作壓力於處理腔室226中並移除過量的處理氣體與/或處理副產物。氣體入口232可注入噴淋頭233(如圖所示)或其他適當的氣體分配元件，以在複數個金屬絲210上實質上均勻地分配氣體。
在某些實施例中，可提供一或更多個遮蔽件220以使腔室主體202的內部表面上的多餘沉積減到最小。替代或結合，可使用一或更多個腔室襯裡222使清洗更容易。使用遮蔽件與襯裡可排除或降低多餘清洗氣體(例如，溫室氣體NF3 )的使用。遮蔽件220與腔室襯裡222通常保護腔室主體的內部表面免於不利地收集由於處理氣體流動於腔室中而產生的沉積材料。遮蔽件220與腔室襯裡222可為可移除、可替換與/或可清洗的。遮蔽件220與腔室襯裡222可經配置以覆蓋腔室主體可能受到塗覆的所有區域，包括(但不限於)金屬絲210周圍與塗覆隔室的任何或所有(選擇性地)壁上。一般而言，遮蔽件220與腔室襯裡222可由鋁(Al)所製造並可具有粗糙表面以提高沉積材料的黏著以避免沉積材料的剝落。可用任何適當方式將遮蔽件220與腔室襯裡222安裝在處理腔室的任何或所有區域中，例如HWCVD來源周圍。在某些實施例中，可移除來源、遮蔽件與襯裡進行保養並藉由打開沉積腔室的上部進行清洗。舉例而言，在某些實施例中，沉積腔室的蓋或頂部可沿著凸緣238耦接至沉積腔室的主體，而凸緣238支撐蓋並提供表面以固持蓋至沉積腔室的主體。
控制器206可耦接至處理腔室226的多個部件以控制多個部件的運作。儘管示意性地圖示耦接至處理腔室226，但控制器可操作性地連接至可由控制器所控制的任何部件(諸如，電源供應器212、耦接至氣體入口232的氣體供應器(未圖示)、耦接至出口234的真空泵與/或節流閥(未圖示)、基板支撐件228等等)以根據本文揭露的方法控制HWCVD沉積製程。控制器206通常包括中央處理單元(CPU) 208、記憶體213與CPU 208的支援電路211。控制器206可直接或透過與特定支援系統部件相關的其他電腦或控制器(未圖示)來控制處理腔室226。控制器206可為能用於工業設定以控制多個腔室與子處理器的通用電腦處理器的任何形式的一者。CPU 208的記憶體或電腦可讀媒介213可為現成記憶體(諸如，隨機存取記憶體(RAM)、唯讀記憶體(ROM)、軟碟、硬碟、快閃或者本端或遠端的數位儲存的任何其他形式)的一者或多者。支援電路211耦接至CPU 208以用傳統方式支援處理器。該等電路包括快取、電源供應器、時脈電路、輸入/輸出電路與子系統等等。本文所述的本發明方法可儲存於記憶體213中作為軟體程序214，軟體程序214可被執行或調用以將控制器變成特定用途控制器以用本文所述方式控制處理腔室226的運作。舉例而言，記憶體213可為儲存有指令的非暫態電腦可讀媒介，在執行指令時可造成處理腔室226執行本文所述的處理配置在熱絲化學氣相沉積(HWCVD)處理腔室的處理空間中的基板的方法。軟體程序亦可儲存於第二CPU (未圖示)中與/或由第二CPU所執行，第二CPU位於由CPU 208所控制的硬體的遠端。
儘管上文針對本揭露內容的實施例，但可在不悖離本揭露內容的基本範圍下設計出揭露內容的其他與進一步實施例。
100‧‧‧方法
102、104‧‧‧步驟
202‧‧‧腔室主體
204‧‧‧內部處理空間
205‧‧‧箭號
206‧‧‧控制器
208‧‧‧CPU
210‧‧‧金屬絲
211‧‧‧支援電路
212‧‧‧電源供應器
213‧‧‧記憶體
214‧‧‧軟體程序
220‧‧‧遮蔽件
222‧‧‧腔室襯裡
226‧‧‧處理腔室
228‧‧‧基板支撐件
230‧‧‧基板
232‧‧‧氣體入口
233‧‧‧噴淋頭
234‧‧‧出口
238‧‧‧凸緣
300、400、450、470、500、550、600‧‧‧反應製程
302‧‧‧四矽烷前驅物
304、404、454、476、506、554、604‧‧‧氫自由基
306、456、478‧‧‧可流動矽膜
308‧‧‧固化矽膜
402‧‧‧四乙烯矽烷前驅物
406‧‧‧可流動碳化矽膜
408、458、480、510‧‧‧固化碳化矽膜
452‧‧‧三矽戊烷前驅物
472、502‧‧‧三矽烷前驅物
474‧‧‧甲烷
504‧‧‧氨氣
508、556‧‧‧可流動氮化矽膜
552‧‧‧三矽烷基胺前驅物
558‧‧‧固化氮化矽膜
602‧‧‧含矽前驅物
606‧‧‧可流動碳氧化矽膜
608‧‧‧固化碳氧化矽膜
可藉由參照描繪於附圖中的本揭露內容的說明性實施例理解簡短概述於上方及詳細論述於下方的本揭露內容的實施例。附圖僅描繪此揭露內容的典型實施例並因此不應被視為限制此揭露內容的範疇，因為此揭露內容可認可其他等效性實施例。
第1圖描繪根據本揭露內容的某些實施例之沉積可流動含矽膜的方法的流程圖。
第2圖描繪根據本揭露內容的某些實施例的熱絲化學氣相沉積(HWCVD)處理腔室的示意側視圖。
第3圖顯示根據本揭露內容的某些實施例利用矽烷、二矽烷、三矽烷、四矽烷、五矽烷、十二氯四矽烷或十二氯五矽烷前驅物的至少一者形成可流動矽層的反應製程300。
第4A圖顯示根據本揭露內容的某些實施例利用四乙烯矽烷前驅物形成可流動碳化矽層的反應製程400。
第4B圖顯示根據本揭露內容的某些實施例利用三矽戊烷前驅物形成可流動碳化矽層的反應製程450。
第4C圖顯示根據本揭露內容的某些實施例利用兩個前驅物氣體形成可流動碳化矽層的反應製程470。
第5A圖顯示根據本揭露內容的某些實施例利用三矽烷基胺前驅物形成可流動氮化物層的反應製程550。
第5B圖顯示根據本揭露內容的某些實施例利用兩個前驅物氣體形成可流動氮化物層的反應製程500。
第6圖顯示根據本揭露內容的某些實施例利用四甲氧基矽烷、四乙氧基矽烷、三甲氧基矽烷、三乙氧基矽烷、四甲基二矽氧烷、四甲基二矽氧烷、八甲基環四矽氧烷前驅物的至少一者形成可流動碳氧化矽層的反應製程600。
為了促進理解，已經儘可能利用相同的元件符號來標示圖式中共有的相同元件。圖式並非按照比例繪製且為了清楚起見可加以簡化。一個實施例的元件與特徵可有利地併入其他實施例而毋需進一步列舉。
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Claims (20)

  1. 一種處理一基板的方法，該基板配置於一熱絲化學氣相沉積(HWCVD)處理腔室的一處理空間中，該方法包括： (a)提供一含矽前驅物氣體進入該處理空間中，該含矽前驅物氣體由一位在該基板的一表面上方一第一距離處的入口提供進入該處理空間中；及 (b)透過引導數個氫自由基至該處理空間來破壞該含矽前驅物氣體的數個分子中的數個氫-矽鍵以沉積一可流動含矽層於該基板頂上，其中該些氫自由基係藉由在複數個金屬絲上流動一含氫氣體而加以形成，該複數個金屬絲配置於該處理空間中且在該基板與該入口上方。
  2. 如請求項1所述之方法，其中該可流動含矽層為純矽(Si)、碳氧化矽(SiOC)、碳化矽(SiC)與氮化矽(SiN)的至少一者。
  3. 如請求項2所述之方法，其中該可流動含矽層為純矽(Si)而該含矽前驅物氣體為矽烷、二矽烷、三矽烷、四矽烷、五矽烷、十二氯四矽烷或十二氯五矽烷。
  4. 如請求項2所述之方法，其中該可流動含矽層為碳氧化矽(SiOC)而該含矽前驅物氣體為TEOS、TMOS、TriEOS、TriMOS、OMCTS、TMDSO或HMDS-H的至少一者。
  5. 如請求項2所述之方法，其中該可流動含矽層為碳化矽(SiC)而該含矽前驅物氣體為甲烷或丙烷的至少一者以及三矽戊烷、四乙烯矽烷、矽烷、二矽烷、三矽烷、四矽烷。
  6. 如請求項2所述之方法，其中該可流動含矽層為氮化矽(SiN)而該含矽前驅物氣體為三矽烷基胺，或者氨與/或氮氣的至少一者以及矽烷、二矽烷、三矽烷、四矽烷。
  7. 如請求項1至6任何一項所述之方法，其中該第一距離係該基板的該表面上約10 mm至約50 mm。
  8. 如請求項1至6任何一項所述之方法，其中該基板的一溫度係約50℃至約150℃。
  9. 如請求項1至6任何一項所述之方法，其中該複數個金屬絲的一溫度係約1300℃至約2400℃。
  10. 如請求項1至6任何一項所述之方法，其中該含氫氣體的一流動速率係約10 sccm至約1000 sccm。
  11. 如請求項1至6任何一項所述之方法，其中該含矽前驅物氣體的一流動速率係約100 mg/分鐘至約1000 mg/分鐘。
  12. 如請求項1至6任何一項所述之方法，進一步包括在沉積該可流動含矽層之後固化該可流動含矽層。
  13. 如請求項12所述之方法，進一步包括施加UV光與/或熱退火至該可流動含矽層以固化該可流動含矽層。
  14. 如請求項12所述之方法，進一步包括透過應用氫自由基能量來固化該可流動含矽層。
  15. 如請求項12所述之方法，進一步包括透過應用氫自由基能量接著藉由施加UV光與/或熱退火至該可流動含矽層來固化該可流動含矽層。
  16. 如請求項1至6任何一項所述之方法，進一步包括： (c)沉積該可流動含矽層的一第一層； (d)透過應用氫自由基能量接著藉由施加UV光與/或熱退火至該可流動含矽層來固化該可流動含矽層的該第一層；及 (e)反覆(c)-(d)以沉積該可流動含矽層至一預定厚度。
  17. 如請求項16所述之方法，進一步包括： (f)透過應用UV光與/或熱退火來固化沉積至一預定厚度的該可流動含矽層。
  18. 如請求項17所述之方法，進一步包括： (g)在反覆(c)、(d)與(f)之前透過應用UV光與/或熱退火來固化該可流動含矽層的該第一層。
  19. 一種處理一基板的方法，該基板配置於一熱絲化學氣相沉積(HWCVD)處理腔室的一處理空間中，該方法包括： (a)提供一含矽前驅物氣體進入該處理空間中，該含矽前驅物氣體由一位在該基板的一表面上方一第一距離處的入口提供進入該處理空間中；及 (b)透過引導數個氫自由基至該處理空間來破壞該含矽前驅物氣體的數個分子中的數個氫-矽鍵以沉積一可流動含矽層於該基板頂上，其中該些氫自由基係藉由在複數個金屬絲上流動一含氫氣體而加以形成，該複數個金屬絲配置於該處理空間中且在該基板與該入口上方； (c)沉積該可流動含矽層的一第一層； (d)透過應用氫自由基能量接著藉由施加UV光與/或熱退火至該可流動含矽層來固化該可流動含矽層的該第一層；及 (e)反覆(c)-(d)以沉積該可流動含矽層至一預定厚度。
  20. 一種儲存有數個指令的非暫態電腦可讀媒介，在執行該些指令時可造成一處理腔室執行一種如請求項1至6或19任何一項所述之處理一基板的方法，該基板配置於一熱絲化學氣相沉積(HWCVD)處理腔室的一處理空間中。
TW106140674A 2016-11-25 2017-11-23 使用熱絲化學氣相沉積來沉積可流動含矽膜的方法 TW201829825A (zh)

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