TWI581334B - 沉積二氧化矽膜的方法 - Google Patents

沉積二氧化矽膜的方法 Download PDF

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TWI581334B
TWI581334B TW102114803A TW102114803A TWI581334B TW I581334 B TWI581334 B TW I581334B TW 102114803 A TW102114803 A TW 102114803A TW 102114803 A TW102114803 A TW 102114803A TW I581334 B TWI581334 B TW I581334B
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hydrogen
plasma
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凱瑟林 克魯克
安德魯 普萊斯
馬克 卡魯瑟斯
丹尼爾 亞查德
史帝芬 柏吉斯
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Ｓｐｔｓ科技公司
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Description

沉積二氧化矽膜的方法
本發明有關使用電漿增強化學氣相沈積法(PECVD)，更特別地使用正矽酸乙酯(TEOS)，沈積二氧化矽膜之方法。
從正矽酸乙酯以及氧中沈積二氧化矽係已知之技術。然而，當沈積溫度為300℃或更低時，所產生之二氧化矽層易潮溼再吸水。此導致隨著時間漏電分解以及分離之特性。
因為於矽晶圓上，矽穿孔(TSV)之需求增加，因此降低沈積溫度之需求隨之而來。有許多可與矽穿孔(TSV)一起使用之可能的積體架構，其等之一些需要使用非永久的結合矽晶圓至載體晶圓。結合黏著劑會限制二氧化矽沈積之溫度，因為結合材料在目前用於沈積二氧化矽之溫度下可能會分解。
歐洲專利申請案第10275131.0號描述一種在沈積膜上進行氫電漿處理，以改良該膜之表面上之Si-H鍵結。此在200℃或更低的溫度下進行。然而，製造具有TSV之晶圓，需要更低的沈積以及電漿處理溫度。
因此，需要提供一種可在比先前所進行更低的溫 度下進行，且可克服有關濕氣再吸收之問題之氧化矽沈積之方法。
本發明提供一種在包括供給TEOS、氧或其來源以及氫作為前趨物之室中，使用PECVD，沈積二氧化矽之方法。
與沒有包括氫之沈積循環相比，在沈積循環中併入氫作為活性氣體，在二氧化矽膜之特性方面，產生顯著的改善。
本發明可在任何適合的溫度下，甚至可在高溫下進行。在一具體例中，該室之溫度介於100℃與500℃之間。在另外的具體例中，該室之溫度介於100℃與250℃之間。在又另外的具體例中，該室之溫度介於125℃與175℃之間。此等較低的溫度適合用於製造具有TSV之晶圓。
可使用純氧作為前趨氣體，或可使用氧來源，諸如用N2O代替。氦係作為TEOS之運載氣體。
雖然可使用任何適量數量之前趨物，但本發明人使用之O2：TEOS之比例為10-20：1，以體積流量單位計。
在此所揭示之方法製得之膜，可進一步經歷在歐洲專利申請案第10275131.0號中所述之氫電漿後沈積處理步驟之處理。此步驟另外會抑制濕氣之再吸收以及減少漏電。
在一具體例中，該電漿是RF誘導的電漿。該電漿可由高頻成分以及低頻成分產生。該高頻成分是 13.56MHz，功率選擇之範圍從600-1200W，該低頻成分是375KHz，功率選擇之範圍從300-500W。
在一具體例中，使用蓮蓬式噴頭提供該前趨物至該室中。該蓮蓬式噴頭可為RF驅動的蓮蓬式噴頭，用於提供RF功率給該電漿。較佳地，該RF驅動的蓮蓬式噴頭是使用高頻成分以及低頻成分驅動。該高頻成分是13.56MHz，功率選擇之範圍從600-1200W，該低頻成分是375KHz至2MHz，功率選擇之範圍從300-500W。
10‧‧‧裝置
11‧‧‧室
12‧‧‧蓮蓬式噴頭
13‧‧‧晶圓支撐件
14‧‧‧高頻來源
15‧‧‧低頻來源
16、17‧‧‧匹配元件
18‧‧‧幫浦出口
本發明可以各種方法進行，現在將參照所附之圖式，以例示之方法說明特別的具體例。
圖1a以及圖1b分別顯示方法A以及B產生之膜，隨時間改變之FTIR光譜。
圖2a顯示由方法A製成之膜之漏電圖。圖2b顯示方法B中已進行氫電漿後沈積處理製成之膜之漏電圖。圖2c顯示方法B中沒有進行氫電漿後沈積處理製成之膜之漏電圖。
圖3a顯示由方法C製得之膜(即，在沈積方法中含有氫)中，漏電隨著所施與之電場改變之圖。
圖3b顯示與方法C之相似，但在該沈積方法中沒有氫參與之方法，漏電隨著時間改變之圖。
圖4顯示用於沈積裝置之概略圖。
使用一種裝置，使用下列方法條件進行一系列之實驗。
方法A：室壓力2000mT、1500sccm O2，0 H2；66sccm TEOS於1000sccm He中，666W高頻，334W低頻，溫度125℃。
方法B：室壓力3100mT，2300sccm O2，155sccm TEOS於2000sccm He中，溫度125℃，1000sccm H2，高頻900W，低頻400W。
方法C：室壓力2500mT，2300sccm O2，750sccm H2，溫度175℃，155sccm TEOS於500sccm He中，高頻1320W，低頻495W。
方法A、B以及C之沈積速率分別為298nm/min、709nm/min以及702nm/min。
圖1a顯示方法A製得之膜，在沈積時以及一週後擷取之FTIR光譜。可見到，在890cm-1以及3400cm-1之波峰，在一週後變寬。此變寬指出，低程度的濕氣吸收。圖1b顯示方法B製得之膜之FTIR光譜。可見到，在890cm-1以及3400cm-1之波峰沒有任何移位，指出沒有檢測到濕氣吸收。方法A以及B二者，最後在與沈積製程相同之溫度下，進行氫電漿後沈積處理步驟。
圖2a顯示使用方法A製得之膜，經氫電漿後沈積處理之漏電對施與的電場以及曝露於大氣之圖。在6MV/cm周圍可見到小量的升高，但在2MV/cm沒有移位，其為可用裝置可運作之圖。圖2b顯示使用方法B製得之膜，之後進行氫電漿後沈積處理步驟之漏電圖。可見到，在2MV/cm之漏電沒有位移。圖2c顯示使用方法B製得之膜，之後沒有進行 氫電漿後沈積處理步驟之漏電圖。可見到，不管是否缺少此步驟，當與方法A相比，漏電特性均有改善。
以上表1進一步證明圖2a、2b以及2c中所示之方法之結果。在該表中亦顯示使用方法A，但沒有氫電漿後沈積步驟之實驗結果。
圖3a顯示方法C製得之膜中，漏電隨著施與之電場改變之圖。圖3b顯示與方法C相似，但在沈積過程中沒有氫參與之方法，漏電隨著時間改變之圖。從此二個圖中可見，當在提高溫度下之沈積過程中使用氫時，二氧化矽膜之漏電特性得到改善。
圖4顯示用於進行本發明之具體例之概略裝置。裝置10包含室11、蓮蓬式噴頭12、晶圓支撐件13以及各別的高與低頻來源14以及15。蓮蓬式噴頭12安裝成可接收三種前趨物(TEOS於氦中、O2或其來源以及H2)。分別提供匹配元件16以及17，供用於高以及低頻來源14以及15，以及幫浦出口18，提供用於移除剩餘反應氣體。
已示範在沈積循環中使用H2作為活性氣體沈積 之二氧化矽(TEOS基)膜。此外，該方法具有高沈積速率之優點，且可在低溫下，以及比標準溫度高之溫度下進行。與之前已知之方法A製得之膜相比，由於缺少濕氣吸收，在沈積階段添加氫，使膜之電氣特性得到改善，且確保其等隨著時間仍保持安定。此外，本發明人相信，在沈積過程中包括氫，有助於該膜之原位緻密化。在表1中可見，此緻密化會增加折射指數以及抗壓強度。
藉由包括氫電漿後沈積步驟，進一步減少了一開始的漏電且抑制了濕氣再吸收。
為避免不確定性，當在此提到特徵“包括”一或多種元件時，本發明之說明書亦包括在其範疇內提到之特徵“包含”該元件、“基本上由該元件構成”以及“由該元件構成”。
10‧‧‧裝置
11‧‧‧室
12‧‧‧蓮蓬式噴頭
13‧‧‧晶圓支撐件
14‧‧‧高頻來源
15‧‧‧低頻來源
16、17‧‧‧匹配元件
18‧‧‧幫浦出口

Claims (12)

  1. 一種在基材上沈積二氧化矽薄膜之方法，其包括下列步驟：提供前趨物至一含有該基材之室中，以及使用電漿增強化學氣相沈積法，在該基材上沈積該二氧化矽，其中該前趨物包括由一運載氣體提供的正矽酸乙酯(TEOS)、氧或其來源以及氫，其中該二氧化矽在100以及250℃間之溫度下沈積，且其中TEOS的運載氣體至該室的流量率與氫氣至該室的流量率的比值係在0.67：1和2：1間的範圍內。
  2. 如申請專利範圍第1項之方法，其中該二氧化矽薄膜在125至175℃下沈積。
  3. 如申請專利範圍第1項之方法，其中該沈積的二氧化矽薄膜，經歷氫電漿後沈積處理步驟。
  4. 如申請專利範圍第3項之方法，其中該氫電漿後沈積處理在破除真空後進行。
  5. 如申請專利範圍第3或4項之方法，其中該氫電漿處理在與沈積該二氧化矽相同之溫度下進行。
  6. 如申請專利範圍第3項之方法，其中該電漿係由高頻RF成分以及低頻RF成分產生。
  7. 如申請專利範圍第1項之方法，其中該前趨物係利用蓮蓬式噴頭供給至該室。
  8. 如申請專利範圍第7項之方法，其中該蓮蓬式噴頭提供RF功率給該電漿。
  9. 如申請專利範圍第8項之方法，其中使用具有高頻以及低頻成分之RF驅動的蓮蓬式噴頭，沈積該前趨物。
  10. 如申請專利範圍第9項之方法，其中該高頻成分是13.56MHz，且該功率選擇之範圍從600至1200W，以及該低頻成分是350KHz至2MHz，且該功率選擇之範圍從300至500W。
  11. 一種實質上如在此之前所述以及參考所附之圖式之方法。
  12. 一種二氧化矽薄膜，其由如前述申請專利範圍中任一項之方法製得。
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