JP6869025B2 - 接着向上法 - Google Patents
接着向上法 Download PDFInfo
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- JP6869025B2 JP6869025B2 JP2016247555A JP2016247555A JP6869025B2 JP 6869025 B2 JP6869025 B2 JP 6869025B2 JP 2016247555 A JP2016247555 A JP 2016247555A JP 2016247555 A JP2016247555 A JP 2016247555A JP 6869025 B2 JP6869025 B2 JP 6869025B2
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- pecvd process
- silicon dioxide
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- 238000000034 method Methods 0.000 title claims description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 74
- 239000010410 layer Substances 0.000 claims description 49
- 239000012790 adhesive layer Substances 0.000 claims description 48
- 235000012239 silicon dioxide Nutrition 0.000 claims description 36
- 239000000377 silicon dioxide Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 18
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 17
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 13
- 238000002835 absorbance Methods 0.000 claims description 8
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 26
- 230000008021 deposition Effects 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 150000003376 silicon Chemical class 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000005661 hydrophobic surface Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 238000009864 tensile test Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 244000282866 Euchlaena mexicana Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Description
第一のプラズマ化学気相成長(PECVD)プロセスにより二酸化ケイ素接着層を半導体基板上へ堆積させる工程;及び
第二のPECVDプロセスにより誘電体層を前記接着層上へ堆積させる工程;
を含み、かつ前記第一のPECVDプロセスは、O2の不存在下で又はO2を250sccm以下の流量で当該プロセスに導入しながら、オルトケイ酸テトラエチル(TEOS)を含む気体雰囲気で行われる、半導体基板と誘電体層の間の接着を向上させる方法が提供される。
汚染されたケイ素表面を再現するために、低温(50〜200℃)で、その場(in−situ)ポリマー揮散プラズマを、露出したケイ素表面上へ直接掛けた。標準的なプロセス条件を表1に示す。
PECVDプロセス中に酸素をほとんど又は全く流さないTEOS・PECVDプロセスにおいて、二酸化ケイ素接着層を堆積させた。表2に、PECVDプロセスパラメータにとって標準的な範囲及び(非限定的であるが)好ましい値を示す。利用された低RF周波数は380kHzであり、利用された高RF周波数は13.56MHzであった。他の周波数を代わりに使用した可能性も捨てきれない。一般に、低RF周波数は、400kHz未満の周波数であると見なすことができ、高RF周波数は、400kHz以上の周波数であると見なすことができる。
TEOS系PECVD及びシラン系PECVDにより堆積させた窒化ケイ素及び二酸化ケイ素のフィルムを含む様々な誘電体層を堆積させた。500nm〜3μmの範囲の厚さ及び50〜400℃の温度でフィルムを堆積させた。汚染されたケイ素表面上へ、又は二酸化ケイ素接着層上へフィルムを堆積させた。代表的な堆積条件を表8に示す。
汚染されたケイ素表面上へ直接堆積させた誘電体フィルムで接着試験を行なった。また、PECVDによって、ケイ素表面上へ100nmの二酸化ケイ素接着層を堆積させ、その後に接着層上へ誘電体層を堆積させて、実験を行なった。上記の低RF周波数で低圧のPECVDプロセスを用いて接着層を堆積させた。堆積させた複数の誘電体層の厚さは、TEOS系二酸化ケイ素、シラン系二酸化ケイ素、及び窒化ケイ素フィルムについて、それぞれ3μm、600nm及び500nmであった。接着試験の結果を表9に示す。
Claims (13)
- 第一のプラズマ化学気相成長(PECVD)プロセスにより二酸化ケイ素接着層をケイ素基板の表面上へ堆積させる工程;及び
第二のPECVDプロセスにより誘電体層を前記接着層上へ堆積させる工程;
を含み、かつ前記第一のPECVDプロセスは、O2の不存在下で又はO2を250sccm以下の流量で当該プロセスに導入しながら、オルトケイ酸テトラエチル(TEOS)を含む気体雰囲気で行われる、ケイ素基板と誘電体層の間の接着を向上させる方法。 - O2が、100sccm以下の流量で前記第一のPECVDプロセスに導入される、請求項1に記載の方法。
- O2が、10sccm以下の流量で前記第一のPECVDプロセスに導入される、請求項2に記載の方法。
- 前記誘電体層がケイ素含有材料である、請求項1〜3のいずれか1項に記載の方法。
- 前記誘電体層が、窒化ケイ素、酸化ケイ素又は炭化ケイ素である、請求項4に記載の方法。
- 前記第一のPECVDプロセスでは、第一のRFシグナルを利用してプラズマを発生させ、かつ前記第一のRFシグナルが、400kHz未満の周波数である、請求項1〜5のいずれか1項に記載の方法。
- 前記第一のPECVDプロセスが、H2を含む気体雰囲気で行なわれる、請求項1〜6のいずれか1項に記載の方法。
- H2が、500〜1200sccmの範囲内の流量で前記第一のPECVDプロセスへ導入される、請求項7に記載の方法。
- 前記二酸化ケイ素接着層が、1000nm以下の厚さを有する、請求項1〜8のいずれか1項に記載の方法。
- 前記接着層が、CHx{式中、xは1〜3である。}及びSiOの吸光度と関連するFTIRにより得られたピーク面積を比較することにより算出された少なくとも0.3%、好ましくは少なくとも3%のCHx{式中、xは1〜3である。}:SiO比率を有する、請求項1〜9のいずれか1項に記載の方法。
- 前記第一のPECVDプロセスが、2.0〜4.0Torrの範囲内の圧力で行なわれる、請求項1〜10のいずれか1項に記載の方法。
- 前記第一のPECVDプロセスが、100〜200℃の範囲内の温度で行なわれる、請求項1〜11のいずれか1項に記載の方法。
- ケイ素基板と、前記ケイ素基板の表面上に形成された二酸化ケイ素接着層と、前記二酸化ケイ素接着層上に形成された誘電体層と、を含み、ケイ素基板と誘電体層の間の接着を向上させた構造体であって、該二酸化ケイ素接着層が、CHx{式中、xは1〜3である。}及びSiOの吸光度と関連するFTIRにより得られたピーク面積を比較することにより算出された少なくとも0.3%、好ましくは少なくとも3%のCHx{式中、xは1〜3である。}:SiO比率を有する構造体。
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