CN105900214A - 通过使用远程等离子体pecvd的fcvd硬件形成的可流动碳膜 - Google Patents

通过使用远程等离子体pecvd的fcvd硬件形成的可流动碳膜 Download PDF

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CN105900214A
CN105900214A CN201480072981.9A CN201480072981A CN105900214A CN 105900214 A CN105900214 A CN 105900214A CN 201480072981 A CN201480072981 A CN 201480072981A CN 105900214 A CN105900214 A CN 105900214A
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A·查特吉
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Abstract

本发明的实施例总体上涉及用于在基板上形成可流动含碳膜的方法。在一个实施例中，含氧气体流入远程等离子体区域内以产生含氧等离子体流出物，并且在含有该基板的基板处理区域中使含碳气体与该含氧等离子体流出物结合。含碳膜被形成在形成在该基板上的沟槽中，并且低K介电材料被沉积在该沟槽中的含碳膜上。通过UV处理来分解该含碳膜，并且空间间隙被形成在该沟槽中且位于该低K介电材料下方。

Description

通过使用远程等离子体PECVD的FCVD硬件形成的可流动碳膜
技术领域
本发明的实施例总体上涉及用于在半导体基板上形成可流动含碳膜的方法。
背景技术
自从数十年前的半导体器件的引入，半导体器件几何结构在尺寸上已经急剧地减小。现代的半导体制造设备通常生产具有45nm、32nm与28nm特征尺寸的装置，并且正在研发与并实现新的设备以制造具有甚至更小的几何结构的装置。减小的特征尺寸造成装置上的结构特征具有减小的宽度。装置上之间隙与沟槽的宽度窄到使得利用介电材料来填充间隙变得更有挑战性。沉积介电材料易于在间隙完全填满之前在顶部处堵塞，因而在间隙的中间产生空隙或细缝。
近几年来，已经发展许多技术来避免使介电材料堵塞间隙的顶部，或“修复(heal)”已经形成的空隙或细缝。一种方式是开始于含碳可流动材料，能以液相将该含碳可流动材料涂覆到旋转的基板表面(例如SOG沉积技术)。在去除溶剂后，含碳膜被形成在沟槽中。接着，从膜去除碳以在沟槽内形成空气间隙。然而，通过SOG沉积技术形成的含碳膜中的碳是非常难以去除的。
因此，需要一种用于在基板上形成可流动含碳膜的改进方法。
发明内容
本发明的实施例总体上涉及用于在基板上形成可流动含碳膜的方法。在一个实施例中，含氧气体流进远程等离子体区域内以产生含氧等离子体流出物，并且在含有所述基板的基板处理区域中使含碳气体与所述含氧等离子体流出物结合。含碳膜形成在沟槽中，所述沟槽形成在所述基板上，并且低K介电材料被沉积在所述沟槽中的含碳膜上。通过UV处理来分解所述含碳膜并且气隙被形成在所述沟槽中且位于所述低K介电材料下方。
在一个实施例中，公开了一种用于在形成在基板上的沟槽中形成气隙的方法。所述方法包括在所述沟槽的第一部分中形成可流动含碳膜的步骤，所述步骤包括：将含碳气体提供到化学气相沉积腔室中的基板处理区域；将含氧气体提供到远程等离子体系统以形成含氧等离子体流出物；将所述等离子体流出物引导到所述基板处理区域内；以及使所述等离子体流出物和所述含碳气体反应以在所述沟槽的第一部分中形成所述可流动含碳膜。所述方法进一步包括：在所述沟槽的第二部分中且在所述可流动含碳膜上形成低K介电材料；以及去除所述可流动含碳膜以在所述沟槽的第一部分中形成气隙。
在另一实施例中，公开了一种用于在形成在基板上的沟槽中形成气隙的方法。所述方法包括在所述沟槽的第一部分中形成可流动聚(甲基丙烯酸甲酯)膜，这包括：将甲基丙烯酸甲酯气体提供到化学气相沉积腔室中的基板处理区域；在所述化学气相沉积腔室中的与所述基板处理区域不同的等离子体区域中形成含氩与氧的等离子体流出物；将所述等离子体流出物引导到所述基板处理区域内；以及使所述等离子体流出物和所述甲基丙烯酸甲酯气体反应以在所述沟槽的第一部分中形成所述可流动聚(甲基丙烯酸甲酯)膜。所述方法进一步包括去除所述可流动聚(甲基丙烯酸甲酯)膜以在所述沟槽的第一部分中形成气隙。
附图说明
因此，为了能详细理解本发明的上述特征的方式，可参考多个实施例得出以上简要概括的本发明的更具体的描述，并且在附图中输出实施例中的一些。然而应注意的是，所附附图仅示出本发明的典型实施例，并且不应被视为本发明范围的限制，本发明可允许其他等效实施例。
图1是描绘根据一个实施例的用于在形成在基板上的沟槽中形成气隙的方法的流程图。
图2示出根据一个实施例的基板处理系统。
图3示出根据一个实施例的基板处理腔室。
为促进理解，在可能的情况下使用相同的附图标记来表示附图共有的相同元件。可设想出的是一个实施例中公开的元件可有益地用于其他实施例而无需特定的陈述。
具体实施方式
本发明的实施例总体上涉及用于在基板上形成可流动含碳膜的方法。在一个实施例中，含氧气体流进远程等离子体区域内以产生含氧等离子体流出物，并且在含有基板的基板处理区域中使含碳气体与含氧等离子体流出物结合。含碳膜被形成在形成在基板上的沟槽中，并且低K介电材料被沉积在沟槽中的含碳膜上。通过UV处理来分解含碳膜，并且气隙被形成在沟槽中且位于低K介电材料下方。
图1是描绘根据对于300mm直径晶片的一个实施例的用于在形成在基板上的沟槽中形成气隙的方法的流程图100。在框102，含碳前驱物气体被引导到化学气相沉积(CVD)腔室的基板处理区域。含碳前驱物气体可以是诸如甲基丙烯酸甲酯(MMA)之类的含碳单体并且可具有400到600每分钟标准立方厘米(sccm)的流速。在一个实施例中，含碳前驱物气体不含有硅。含碳前驱物气体可通过双区域喷头被引导到基板处理区域。
除了含碳前驱物气体，在框104，含氧等离子体流出物也被引导到CVD腔室的基板处理区域。在一个实施例中，含氧等离子体流出物还包括氩等离子体流出物。通过使含氧与氩的气体(诸如氧气与氩气的混合物)流动通过远程等离子体系统来形成含氧与氩的等离子体流出物。在一个实施例中，氧气具有100sccm的流速，且氩气具有1000到2000sccm的流速。可通过形成在远程等离子体系统中的等离子体来激励含氧与氩的气体，该远程等离子体系统被定位在CVD腔室外侧或内侧。可在CVD腔室内的等离子体区域中激发含氧与氩的气体。此等离子体区域可与基板处理区域隔开。含氧与氩的气体可暴露于远程等离子体，其中所述含氧与氩的气体被分解、被自由基化与/或以其他方式转变成含氧与氩的等离子体流出物。接着，形成在等离子体区域中的等离子体流出物通过双区域喷头被引导到基板处理区域。
接着，在框106，含氧等离子体流出物和含碳前驱物气体在基板处理区域中反应以在形成在基板上的沟槽中形成可流动含碳膜。此反应可在室温(诸如20摄氏度)下发生。在使用MMA作为含碳气体的实施例中，可流动聚(甲基丙烯酸甲酯)(PMMA)被形成在沟槽中。
可流动含碳膜仅填充每个沟槽的一部分，并且每个沟槽的剩余部分被低K介电材料(诸如掺杂碳的氧化硅)填充。在框108，低K介电材料被沉积在沟槽中的含碳膜上。接着，在框110，通过紫外线(UV)处理来去除每个沟槽内的可流动含碳膜，从而留下形成在沟槽的底部中的气隙。利用UV处理来去除如上所述沉积的可流动PMMA膜是相对容易的。
可通过沉积系统(诸如可从美国加利福尼亚州圣克拉拉市的应用材料有限公司获得的等离子体增强CVD(PECVD)系统)来执行用于在形成在基板上的沟槽内形成气隙的方法。图2示出根据一个实施例的基板处理系统200。如图2所示，一对前开式标准舱(FOUP)202供应基板，该基板被机械臂204接收并且基板在被放置到基板处理腔室208a-208f中的一者内前被放置到低压固持区域206内。可使用第二机械臂210以将基板从固持区域206传送到基板处理腔室208a-208f并返回。
基板处理腔室208a-208f可包括一个或更多个系统部件，该系统部件用于沉积、退火、硬化和/或蚀刻形成在基板上的沟槽中的可流动含碳膜(诸如PMMA膜)。在一个配置中，可使用两对处理腔室(例如208c-208d与208e-208f)在沟槽中沉积可流动含碳膜，并且可使用第三对处理腔室(例如208a-208b)来处理经沉积的膜，诸如通过执行UV处理。
图3是根据一个实施例的基板处理腔室300。远程等离子体系统310可处理气体，该气体接着行进通过气体入口组件311。气体入口组件311内可见到有两个不同的气体供应通道。第一通道312运载穿过远程等离子体系统310的气体，而第二通道313绕过远程等离子体系统310。盖321与喷头353被示出在其之间具有绝缘环324，这允许相对于喷头353将AC电位施加到盖321。工艺气体行进通过第一通道312进入腔室等离子体区域320内且可由单独的腔室等离子体区域320中的等离子体激发该工艺气体或者由结合远程等离子体系统310的腔室和等离子体区域320中的等离子体激发该工艺气体。腔室等离子体区域320和/或远程等离子体系统310的组合在本文中可称为远程等离子体系统。含氩与氧的气体可被远程等离子体系统转变成含氩与氧的等离子体流出物。喷头353将腔室等离子体区域320与喷头353下方的基板处理区域370分离。喷头353允许存在于腔室等离子体区域320中的等离子体避免直接地激发基板处理区域370中的气体，但仍允许被激发的物种(诸如等离子体流出物)从腔室等离子体区域320行进到基板处理区域370内。
喷头353可以是双区域喷头，该双区域喷头允许等离子体区域320中创建的等离子体流出物(诸如含氩与氧的等离子体流出物)通过穿过横越喷头353的厚度的通孔356而进入到基板处理区域370内。每个通孔356可具有面对等离子体区域320的开口350，并且开口350可具有比通孔356的直径更小的直径。喷头353还具有一个或更多个中空容积351，中空容积351可被填充有蒸气或气体(诸如含碳前驱物气体)形式的前驱物并且穿过小孔355进入到基板处理区域370内但不直接地进入到等离子体区域320内。
通孔356的数量可介于约60个与约2000个之间。通孔356可具有各种形状但通常简单地制成圆形。开口350的直径可介于约0.5mm与约20mm之间或介于约1mm与约6mm之间。在选择通孔356的截面形状中也具有宽容度，通孔356可制成锥形、圆柱形或这两种形状的组合。在不同实施例中，用于将气体引导到基板处理区域370内的小孔355的数量可介于约100个与约5000个之间或介于约500个与约2000个之间。小孔355的直径可介于约0.1mm与约2mm之间。
尽管以上描述针对本发明的实施例，可设想出本发明的其他与进一步的实施例而不背离本发明的基本范围，并且本发明的范围由所附权利要求书来确定。

Claims (14)

1.一种用于在形成在基板上的沟槽中形成气隙的方法，所述方法包括以下步骤：
在所述沟槽的第一部分中形成可流动含碳膜的步骤，所述步骤包括：
将含碳气体提供到化学气相沉积腔室中的基板处理区域；
将含氧气体提供到远程等离子体系统以形成含氧等离子体流出物；
将所述等离子体流出物引导到所述基板处理区域内；以及
使所述等离子体流出物和所述含碳气体反应以在所述沟槽的第一部分中形成所述可流动含碳膜；
在所述沟槽的第二部分中且在所述可流动含碳膜上形成低K介电材料的步骤；以及
去除所述可流动含碳膜以在所述沟槽的第一部分中形成气隙的步骤。
2.如权利要求1所述的方法，其中所述含碳气体包括甲基丙烯酸甲酯，并且所述可流动含碳膜包括聚(甲基丙烯酸甲酯)。
3.如权利要求2所述的方法，其中所述含氧气体包括氧气与氩气。
4.如权利要求3所述的方法，其中对于300mm晶片，所述甲基丙烯酸甲酯具有等于约400到600sccm的流速。
5.如权利要求3所述的方法，其中对于300mm晶片，所述氧气具有等于约100sccm的流速，并且所述氩气具有等于约1000到2000sccm的流速。
6.如权利要求1所述的方法，其中所述低K介电材料包括掺杂碳的氧化硅。
7.如权利要求1所述的方法，其中通过UV处理来去除所述可流动含碳膜。
8.一种用于在形成在基板上的沟槽中形成气隙的方法，所述方法包括以下步骤：
在所述沟槽的第一部分中形成可流动聚(甲基丙烯酸甲酯)膜的步骤，所述步骤包括：
将甲基丙烯酸甲酯气体提供到化学气相沉积腔室中的基板处理区域；
在所述化学气相沉积腔室中的与所述基板处理区域不同的等离子体区域中形成含氩与氧的等离子体流出物；
将所述等离子体流出物引导到所述基板处理区域内；以及
使所述等离子体流出物和所述甲基丙烯酸甲酯气体反应以在所述沟槽的第一部分中形成所述可流动聚(甲基丙烯酸甲酯)膜；以及
去除所述可流动聚(甲基丙烯酸甲酯)膜以在所述沟槽的第一部分中形成气隙的步骤。
9.如权利要求8所述的方法，其中形成所述含氩与氧的等离子体流出物包括：使氧气与氩气流动到远程等离子体系统。
10.如权利要求9所述的方法，其中对于300mm晶片，所述氧气具有等于约100sccm的流速，并且所述氩气具有等于约1000到2000sccm的流速。
11.如权利要求8所述的方法，其中对于300mm晶片，所述甲基丙烯酸甲酯气体具有等于约400到600sccm的流速。
12.如权利要求8所述的方法，进一步包括以下步骤：
在所述沟槽的第二部分中且在所述可流动聚(甲基丙烯酸甲酯)膜上形成低K介电材料。
13.如权利要求12所述的方法，其中所述低K介电材料包括掺杂碳的氧化硅。
14.如权利要求8所述的方法，其中通过UV处理来去除可流动含碳膜。
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