TWI624870B - 用於蝕刻速率一致性的方法 - Google Patents
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- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 61
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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Abstract
描述調節蝕刻腔室之內部製程腔室壁的方法。可在遠端或本地於電漿中激發含氟前驅物,以在預防性維護時程上週期性地處理內部腔室壁。當經處理之壁用來在調節之後執行矽區域的氣相蝕刻時,經處理之壁促進均勻蝕刻速率。或者,在某些實施例中,可在遠端或本地於電漿中激發含氫前驅物以處理內部腔室壁。接著可在晶圓至晶圓間用更多可重現的蝕刻速率來蝕刻暴露矽的區域。可用遠端激發的含氟前驅物形成之電漿流出物來執行矽蝕刻。
Description
本申請案主張Zhang等人於2013年12月2日申請且名稱為「PROCEDURE FOR ETCH RATE CONSISTENCY」之美國臨時專利申請案第61/910,830號,藉此將其以參考方式併入本文且將其整體用於所有目的。
本發明的實施例關於調節基板處理區域。
藉由產生複雜圖案的材料層於基板表面上之製程而促成積體電路。在基板上產生圖案化材料需要移除暴露材料的受控制方法。化學蝕刻被用於多種目的,包括轉移光阻劑中之圖案進入下層、薄化層或薄化已經存在於表面上之特徵的橫向尺寸。通常,樂見具有蝕刻一種材料快於另一種材料以有助於例如圖案轉移製程進行的蝕刻製程。上述蝕刻製程被稱為對第一材料具選擇性。由於材料、電路與製程的多樣性,已經發展出選擇性移除一個廣闊範圍材料之一或多者的蝕刻製程。然而,利用氣相反應物選擇性蝕刻矽的選擇很少。
通常樂見用乾蝕刻製程自半導體基板選擇性移除材
料。這種期望性源自於以最小物理干擾自微小結構輕柔地移除材料的能力。乾蝕刻製程亦允許藉由移除氣相反應物而忽然地終止蝕刻速率。某些乾蝕刻製程包括暴露基板至一或多個前驅物形成之遠端電漿副產物。舉例而言,三氟化氮的遠端電漿產生搭配離子抑制技術可在電漿流出物流入基板處理區域時自圖案化基板選擇性移除矽。然而,需要製程改善以改良這些遠端電漿製程的效用。
需要維持一致性矽蝕刻速率的方法。
描述調節蝕刻腔室之內部製程腔室壁的方法。可在遠端或本地於電漿中激發含氟前驅物,以在預防性維護時程上週期性地處理內部腔室壁。當經處理之壁用來在調節之後執行矽區域的氣相蝕刻時,經處理之壁促進均勻蝕刻速率。或者,在某些實施例中,可在遠端或本地於電漿中激發含氫前驅物以處理內部腔室壁。接著可在晶圓至晶圓間用更多可重現的蝕刻速率來蝕刻暴露矽的區域。可用遠端激發的含氟前驅物形成之電漿流出物來執行矽蝕刻。
發明的實施例包括調節基板處理區域的方法。方法包括在調節電漿中激發調節含氟前驅物以產生調節電漿流出物。方法更包括暴露內部製程腔室壁至調節電漿流出物。內部製程腔室壁在基板處理區域的邊上。
發明的實施例包括調節基板處理區域的方法。方法包括在調節電漿中激發含氫前驅物以產生調節電漿流出物。方法更包括暴露內部製程腔室壁至調節電漿流出物。內部製
程腔室壁在基板處理區域的邊上。
額外的實施例與特徵部分地於後續敘述中提出,而部分對那些熟悉技術人士在檢閱說明書後變得顯而易見或可在執行揭露實施例時得知。可藉由說明書描述之手段、組合與方法理解與達成揭露實施例的特徵與優點。
100、200‧‧‧預防性維護程序
110、120、125、130、135、145、210、220、225、230、235、245‧‧‧操作
300‧‧‧矽蝕刻速率圖
310、320、330‧‧‧數據
1001‧‧‧基板製程腔室
1010‧‧‧遠端電漿系統
1011‧‧‧氣體入口組件
1012‧‧‧第一通道
1013‧‧‧第二通道
1020‧‧‧腔室電漿區域
1021‧‧‧蓋
1024‧‧‧絕緣環
1050‧‧‧最小直徑
1051‧‧‧中空空間
1053‧‧‧噴頭
1055‧‧‧盲孔
1056‧‧‧通孔
1070‧‧‧基板處理區域
1101‧‧‧製程系統
1102‧‧‧前開式晶圓傳送盒
1104‧‧‧機器人手臂
1106‧‧‧低壓固持區域
1108a-f‧‧‧晶圓製程腔室
1110‧‧‧第二機器人手臂
1155‧‧‧氣體處理系統
1157‧‧‧系統控制器
可藉由參照說明書的剩餘部分與圖式來達成揭露實施例之本性與優點的進一步瞭解。
第1圖係根據實施例之預防性維護程序的流程圖。
第2圖係根據實施例之預防性維護程序的流程圖。
第3圖係根據實施例不具有預防性維護程序及在預防性維護程序之後的矽蝕刻速率圖式。
第4A圖顯示根據發明實施例的基板製程腔室。
第4B圖顯示根據發明實施例之基板製程腔室的噴頭。
第5圖顯示根據發明實施例的基板製程系統。
在隨附圖式中,相似的部件與/或特徵可具有相同的元件符號。再者,可藉由在元件符號後方接著連接號與區別相似部件之第二符號來區別相同類型的不同部件。若在說明書中僅應用第一個元件符號,那敘述可適用於具有相同第一元件符號(不論第二元件符號)的相似部件的任何一者。
描述調節蝕刻腔室之內部製程腔室壁的方法。可在遠端或本地於電漿中激發含氟前驅物,以在預防性維護時程
上週期性地處理內部腔室壁。當經處理之壁用來在調節之後執行矽區域的氣相蝕刻時,經處理之壁促進均勻蝕刻速率。
或者,在某些實施例中,可在遠端或本地於電漿中激發含氫前驅物以處理內部腔室壁。接著可在晶圓至晶圓間用更多可重現的蝕刻速率來蝕刻暴露矽的區域。可用遠端激發的含氟前驅物形成之電漿流出物來執行矽蝕刻。
為了更佳地瞭解與理解發明,現在參照根據實施例
之預防性維護程序100的第1圖。根據實施例,在第1圖的前三個操作過程中,基板處理區域中不存在基板或存在「假」基板。預防性維護程序100藉由在預防性維護操作過程中不依賴基板的存在而降低成本。將三氟化氮流入遠端電漿區域並施加遠端電漿功率(操作110)以形成調節電漿流出物。遠端電漿區域分隔於處理區域。將調節電漿流出物流入基板處理區域(操作120)。可應用氟的其他來源來增強或取代三氟化氮。一般而言,可將調節含氟前驅物流入遠端電漿區域,而調節含氟前驅物可包括氟原子、雙原子氟、三氟化硼、三氟化氯、三氟化氮、氟化碳氫化合物、六氟化硫與二氟化氙的一或多者。調節電漿流出物藉由化學地改變表面來處理內部腔室壁(操作125)。
第1圖的最後三個操作是選擇性的,但有助於讓前
三個操作的優點更清楚。接著將具有矽暴露區域的基板輸送進入基板處理區域(操作130)。在實施例中,基板可為圖案化基板並可具有額外的暴露區域(例如,氧化矽)。將三氟化氮的流動引導進入遠端電漿區域。氟的其他來源可用來增強或取
代三氟化氮。一般而言,可將蝕刻含氟前驅物流入遠端電漿區域,而蝕刻含氟前驅物可包括氟原子、雙原子氟、三氟化硼、三氟化氯、三氟化氮、氟化氫、全氟化碳氫化合物、六氟化硫與二氟化氙的一或多者。三氟化氮提供特殊的優點,由於三氟化氮在調節電漿流出物與簡短討論之蝕刻電漿流出物中形成持久的氟自由基。自三氟化氮形成之氟自由基甚至在通過本文所述之噴頭與/或離子抑制元件後仍保有高度反應性。
遠端電漿區域可位於與製程腔室分隔的區別模組中
或製程腔室中之隔室中。分隔的電漿區域可藉由配置於兩個區域間之噴頭中的通孔而流體地耦接至基板處理區域。剛剛描述(及在設備部分中詳細描述)的硬體液可用於本文所討論的所有製程。
接著將在遠端電漿區域中形成之蝕刻電漿流出物透
過分隔遠端電漿區域與基板處理區域之噴頭的通孔而流入基板處理區域。基板上的矽被選擇性蝕刻(操作135)以致可比起多種其他材料而言更快速地移除矽。根據實施例,蝕刻選擇性(矽:氧化矽或氮化矽)亦可大於或約70:1、大於或約100:1、大於或約150:1、大於或約200:1、大於或約250:1或大於或約300:1。在實施例中,暴露鎢或氮化鈦的區域可存在於圖案化基板上並可被稱為暴露金屬區域。根據實施例,蝕刻選擇性(矽:暴露金屬區域)可大於或約100:1、大於或約150:1、大於或約200:1、大於或約250:1、大於或約500:1、大於或約1000:1、大於或約2000:1或大於或約
3000:1。自基板處理區域移除反應性化學物種與任何製程流出物,並接著自基板處理區域移除基板(操作145)。
基板處理區域邊上的內部製程腔室壁的調節讓晶圓
至晶圓間的選擇性蝕刻速率保持更均勻達延長時間周期。改善提出內部製程腔室壁上的化學終端更穩定而非隨著時間演變。將搭配第3圖描述與利用未調節壁所達成之蝕刻速率比較的定性描述。
現在給的調節與蝕刻含氟前驅物的流動速率範圍適
用於各自的流動操作110與選擇性蝕刻操作135(以及本文所述之所有蝕刻操作)。在實施例中,含氟前驅物(例如,NF3)供應的流動速率在約5sccm與約500sccm之間、約10sccm與約300sccm之間、約25sccm與約200sccm之間、約50sccm與約150sccm之間或約75sccm與約125sccm之間。在實施例中,基板處理區域與遠端電漿區域在處理操作125過程中可不具有或基本上不具有氫。相似地,根據實施例,基板處理區域與遠端電漿區域在選擇性蝕刻操作135過程中可不具有或基本上不具有氫。或者,在選擇性蝕刻操作135(與本文所述之其他蝕刻操作)過程中可應用非常高的氫:氟原子流動比例(例如,大於十的H:F),以相對於廣泛材料陣列地選擇性蝕刻矽。
方法液包括施加能量至遠端電漿區域中之調節與蝕刻含氟前驅物,以在各自的遠端電漿操作110與選擇性蝕刻操作135(以及本文所述的所有遠端電漿)中產生調節與蝕刻電漿流出物。可利用習知技術(諸如,射頻激發、電容耦合功
率、感應耦合功率)產生電漿。在實施例中,可利用電容耦合電漿單元施加能量。在實施例中,遠端電漿源功率可在約100瓦特與約3000瓦特之間、約200瓦特與約2000瓦特之間、約300瓦特與約1000瓦特之間。根據實施例,處理操作125(與本文所述之所有處理操作)亦可包括本地電漿激發以取代遠端電漿激發,或在遠端電漿激發之外包括本地電漿激發。在實施例中,用於執行本文之處理操作的本地電漿的電漿功率可包括施加與遠端電漿相同的電漿功率。本文可交替地將本地電漿稱為「直接」電漿。在實施例中,當用本地電漿來取代操作110-120時,基板處理區域可不具有或基本上不具有氫。
可在應用處理電漿(操作110)過程中將電漿稱為「調節電漿」,或可在選擇性蝕刻操作135過程中將電漿稱為「蝕刻電漿」或「遠端蝕刻電漿」。可將調節電漿稱為「遠端調節電漿」或「本地調節電漿」以描述電漿位置。
現參照根據實施例之預防性維護程序200的第2圖。參照第1圖所討論之多種特點與製程參數可不在此重覆,除了偏離那些特點與製程參數的那些特點與製程參數以外。根據實施例,在第2圖的前三個操作過程中,基板處理區域中不存在基板或存在「假」基板。預防性維護程序200藉由在預防性維護操作過程中不依賴基板的存在而降低成本。將氨流入基板處理區域(操作210)並施加本地電漿功率(操作220)以處理基板處理區域邊上的內部製程腔室壁(操作225)。不論電漿的本地性質,電漿流出物碰撞並藉由化學上改變表面來處理內部腔室壁(操作225)。根據實施例,基板處理區域在處
理操作225過程中可不具有或基本上不具有氟。一般而言,在操作210中可將含氫前驅物或含氮與氫前驅物(其可由氮與氫所構成)流入基板處理區域。根據實施例,含氮與氫前驅物可包括氨與聯氨的一或兩者,且根據實施例,含氮與氫前驅物可不具有氟。
再度包含第2圖的最後三個選擇性操作以改善處理
操作225影響的理解。接著將具有矽暴露區域的基板輸送進入基板處理區域(操作230)。在實施例中,基板可為圖案化基板並可具有額外的暴露區域(例如,氧化矽)。將三氟化氮的流動引導進入遠端電漿區域。氟的其他來源可用來增強或取代三氟化氮。一般而言,可將含氟前驅物流入遠端電漿區域,而含氟前驅物可包括氟原子、雙原子氟、三氟化硼、三氟化氯、三氟化氮、氟化氫、氟化碳氫化合物、六氟化硫與二氟化氙的一或多者。如同前述,由於三氟化氮在電漿流出物中形成長效的氟自由基,在較佳實施例中應用三氟化氮。根據實施例,含氟前驅物可不具有氫。
根據實施例,本文之遠端電漿區域可位於與製程腔
室分隔的區別模組中或製程腔室中之隔室中。分隔的電漿區域可藉由配置於兩個區域間之噴頭中的通孔而流體地耦接至基板處理區域。接著將遠端電漿區域中形成之電漿流出物通過噴頭的通孔流入基板處理區域。基板上的矽被選擇性蝕刻(操作235)以致可比起多種其他材料而言更快速地移除矽。根據實施例,遠端電漿區域與基板處理區域在選擇性蝕刻操作235過程中可不具有氫。稍早描述之蝕刻選擇性亦適用於選擇
性蝕刻操作235。自基板處理區域移除反應性化學物種與任何製程流出物,並接著自基板處理區域移除基板(操作245)。
相較於預防性維護程序100,預防性維護程序200
中內部製程腔室壁的調節可造成化學上不同的層形成於基板處理區域邊上的內部表面上。然而,相對於利用未處理基板處理區域邊上的腔室壁所取得的蝕刻速率而言,在晶圓至晶圓間的蝕刻速率可更相似。經處理的腔室壁讓晶圓至晶圓間的蝕刻速率保持更均勻達延長時間周期(例如,數天)。雖然不同於第1圖的處理,改善提出內部製程腔室壁上的化學終端仍然更加穩定而非隨著時間演變(例如,自一基板至後續處理的基板)。
含氟前驅物的流動速率先前已給過而不在此重覆。
由於預防性維護程序100中沒有存在含氫前驅物,現將描述處理操作225中之含氫前驅物的流動速率範圍。根據實施例,含氫前驅物(例如,NH3)供應的流動速率在約5sccm與約500sccm之間、約10sccm與約300sccm之間、約25sccm與約200sccm之間、約50sccm與約150sccm之間或約75sccm與約125sccm之間。
方法亦包括在處理操作125中施加能量至基板處理
區域中之含氫前驅物以產生處理基板處理區域邊上的內部腔室壁之電漿流出物。可利用習知技術(諸如,射頻激發、電容耦合功率、感應耦合功率)產生電漿。在實施例中,可利用電容耦合電漿單元施加能量。在實施例中,本地電漿功率可在約100瓦特與約3000瓦特之間、約200瓦特與約2000瓦特
之間、約300瓦特與約1000瓦特之間。根據實施例,處理操作125(與本文所述之所有處理操作)亦可包括遠端電漿激發以取代本地電漿激發,或在本地電漿激發之外包括遠端電漿激發。在實施例中,用於執行本文之處理操作的遠端電漿的電漿功率可包括施加與本地電漿相同的電漿功率。根據實施例,當使用遠端電漿時,基板處理區域與遠端電漿區域可不具有或基本上不具有氟。
在所有利用遠端電漿的本文所述實施例中,詞彙「不
具有電漿」可被用來描述在沒有或基本上沒有應用電漿功率過程中的基板處理區域。在實施例中,不具有電漿的基板處理區域可用於處理操作(操作125與225)與選擇性蝕刻操作(操作135與235)兩者。
在蝕刻製程過程中,本文所述的所有實施例之基板
的溫度可大於0℃。基板溫度可大於或約20℃且小於或約300℃。在此基板溫度範圍的高端,矽蝕刻速率下降。在此基板溫度範圍的低端,氧化矽與氮化矽開始蝕刻以致選擇性下降。在揭露實施例中,在本文所述之蝕刻過程中,基板的溫度可大於或約30℃同時小於或約200℃,或者可大於或約40℃同時小於或約150℃。在揭露實施例中,基板溫度可低於100℃、低於或約80℃、低於或約65℃或低於或約50℃。
數據進一步顯示選擇性蝕刻操作135與235過程中
作為製程壓力之函數的矽蝕刻速率的增加。這原因推測是組和兩個或多個含氟流出物的較高可能性。蝕刻製程接著開始移除氧化矽、氮化矽與其他材料。根據實施例,基板處理區
域中之壓力可低於或約10托、低於或約5托、低於或約3托、低於或約2托、低於或約1托或低於或約750毫托。在實施例中,為了確保適當的蝕刻速度,壓力可高於或約0.05托、高於或約0.1托、高於或約0.2托或高於或約0.4托。根據實施例,可組合壓力上限與下限的任一者。
在實施例中,可使用預處理以移除暴露矽區域的表
面上之薄氧化物層。預處理發生在選擇性蝕刻矽(操作135或235)之前。當暴露矽至一種形式或另一種形式(例如,大氣條件)的氧時,經常形成薄氧化物層。由於本文所公開之製程的選擇性如此高,某種程度上,薄氧化物層可使得矽區域表現更像氧化矽區域。薄氧化矽層通常被稱為「原生」氧化物並可利用那些熟悉技術人士所習知的多種製程加以移除。舉例而言,SiconiTM蝕刻可被用來移除原生氧化物。換句話說,可在遠端電漿區域中組合含氟前驅物與含氫前驅物並在電漿中激發。預處理SiconiTM過程中的H:F的原子流比例可在約0.5:1與約8:1之間,以確保在暴露矽表面上產生固體副產物。在發明實施例中,產生這些固體副產物過程中消耗原生氧化物。SiconiTM蝕刻過程中之圖案化基板的溫度可低於固體副產物的昇華溫度。在形成固體副產物之後,可將圖案化基板的溫度升高而高於昇華溫度以移除固體副產物。昇華作用完成自暴露矽移除原生氧化物。
或者,可藉由基板處理區域中形成之氫電漿移除原
生氧化物。在實施例中,藉由施加高於或約200瓦特且低於或約3000瓦特或者高於約300瓦特且低於或約2000瓦特的
本地電漿功率來產生本地預處理電漿。不論使用的方法,在蝕刻暴露矽的操作之前移除原生氧化物(若存在的話)。可在用來選擇性蝕刻矽的相同基板處理區域中執行移除原生氧化物的技術,或者這些製程各自可在分隔腔室中執行。然而,在分隔腔室間之傳送過程中,圖案化基板不應暴露致濕氣或大氣環境。亦應當注意將不論原生氧化物存在與否在本文中使用「暴露矽區域」與「暴露矽」。
本文所述製程的優點在於自基板移除含金屬材料的
共形移除速率。方法不依靠偏壓功率來加速蝕刻劑朝向基板,這降低蝕刻製程在移除側壁上之材料之前移除溝槽之頂部與底部上材料的傾向。本文所用之共形蝕刻製程指的是不論表面形狀而自圖案化表面大致上均勻的材料移除速率。在蝕刻製程之前與之後的層的表面大致上平行。本領域具有通常知識者可理解蝕刻製程可能無法為100%的共形,因此詞彙「大致上」允許可接受的公差。
在本文所述之各個遠端電漿或本地電漿中,前驅物進入遠端電漿區域的流動可進一步包括相對惰性氣體(諸如,He、N2與Ar)的一或多者。惰性氣體可被用來改善電漿穩定性、簡易電漿引發並改善製程一致性。作為添加劑,氬有助於促進形成穩定電漿。當包含氦時,通常可提高製程一致性。這些添加劑存在於本說明書的所有實施例中。不同氣體的流動速率與比例可被用來控制蝕刻速率與蝕刻選擇性。
在實施例中,如示範性設備部分所述之離子抑制器可被用來提供自由基與/或中性物種好用於選擇性蝕刻基板。
離子抑制器亦可被稱為離子抑制元件。在實施例中,舉例而言,離子抑制器被用來過濾含氟電漿流出物以選擇性蝕刻矽。離子抑制器可被包含於本文所述之各個示範性製程中。
利用電漿流出物,可達成含金屬材料相對於多種材料的蝕刻速率選擇性。
離子抑制器可被用來提供自由基濃度高於離子的反
應性氣體。離子抑制器功能是大幅地降低或實質上排除離子性電荷物種自電漿產生區域移動至基板。可在遠端電漿區域中激發電漿過程中,在離子抑制器的另一側上利用Langmuir探針來測量基板處理區域中的電子溫度。在實施例中,電子溫度可低於0.5eV、低於0.45eV、低於0.4eV或低於0.35eV。
藉由配置於基板處理區域與遠端電漿區域間之噴頭與/或離子抑制器的存在而達成這些極低數值的電子溫度。未帶電的中性或自由基物種可通過離子抑制器中的開口而在基板處反應。由於藉由離子抑制器濾除或移除電漿的大部分帶電粒子,在蝕刻製程過程中偏壓基板並非必要。相對於傳統的電漿蝕刻製程(包括濺射與轟擊)而言,上述利用自由基與其他中性物種的製程可減少電漿損傷。離子抑制器有助於控制反應區域中之離子物種的濃度處於有助製程的水平。本發明的實施例亦優於傳統的濕蝕刻製程,在濕蝕刻製程中,液體的表面張力會造成小特徵的彎曲與剝落。
第3圖係不具有預防性維護程序及在根據實施例之
預防性維護程序後的矽蝕刻速率圖300。矽蝕刻速率圖300包括在連續900個晶圓(基板的實例)上執行之蝕刻速率測
量。包括數據310來顯示當處理一系列晶圓而不具有處理晶圓前之任何處理操作時,矽蝕刻速率隨著時間的改變。蝕刻速率可如圖所示般向上偏移,推測是因為基板處理區域邊上的內部表面隨著時間演變。亦包括數據320,數據320顯示在處理操作125(利用含氟前驅物)之後的相對穩定矽蝕刻速率。亦包括數據330,數據330顯示處理225(利用含氫前驅物)之後的相對矽蝕刻速率。氟處理操作125後之數據與氫處理操作225後之數據兩者表示為穩定的矽蝕刻速率,這各自於製造環境中是樂見的。注意的是各自兩個預防性維護操作後的蝕刻速率程度彼此不同,推測是因為表面覆蓋有不同的化學物種。在氟處理操作125後塗覆基板處理區域邊上的內部表面,以致蝕刻速率穩定在與未處理腔室中處理之第一晶圓相似的數值(未處理數據310中最左的數據點)。在氫處理操作225後塗覆內部表面,以致蝕刻速率穩定在較高的矽蝕刻速率下,較高的矽蝕刻速率大致相同於未處理數據310在處理大量晶圓後之蝕刻速率的漸進沿伸。可基於多種製程特性,諸如蝕刻速率的強度、粒子性能與晶圓內的蝕刻速率一致性,來選擇適當的預防性維護程序。
在描述示範性製程腔室與系統的過程中揭露額外的製程參數。
可實施本發明實施例的製程腔室可被包括於製程平台中,製程平台諸如自Applied Materials,Inc(Santa Clara,Calif)取得的CENTURA®與PRODUCER®系統。
第4A圖是根據實施例之基板製程腔室1001。遠端
電漿系統1010可處理含氟前驅物與/或含氫前驅物,含氟前驅物與/或含氫前驅物接著移動通過氣體入口組件1011。在氣體入口組件1011中可見到兩個不同的氣體供應通道。第一通道1012攜帶通過遠端電漿系統1010(RPS)的氣體,而第二通道1013繞過遠端電漿系統1010。在實施例中,任一通道可被用於含氟前驅物。另一方面,第一通道1012可被用於製程氣體而第二通道1013可被用於處理氣體。圖示蓋(或傳導頂部)1021與穿孔分離板1053之間有絕緣環1024,絕緣環1024允許相對於穿孔分離板1053施加AC電位至蓋1021。AC電位擊發腔室電漿區域1020中之電漿。製程氣體可移動通過第一通道1012進入腔室電漿區域1020並單獨藉由腔室電漿區域1020中之電漿激發,或搭配遠端電漿系統1010。若製程氣體(含氟前驅物)流動通過第二通道1013,那麼僅有腔室電漿區域1020被用於激發作用。腔室電漿區域1020與/或遠端電漿系統1010的組合可被稱為本文之遠端電漿區域。穿孔分離板(亦稱為噴頭)1053分隔腔室電漿區域1020與噴頭1053下方之基板處理區域1070。噴頭1053允許電漿存在於腔室電漿區域1020中以避免直接在基板處理區域1070中激發氣體,同時仍允許激發的物種自腔室電漿區域1020移動進入基板處理區域1070。
噴頭1053配置於腔室電漿區域1020與基板處理區
域1070之間,並允許遠端電漿系統1010與/或腔室電漿區域1020中產生之電漿流出物(前驅物或其他氣體的激發衍生物)
通過複數個橫跨板厚度的通孔1056。噴頭1053亦具有一或多個中空空間1051,中空空間1051可填充有蒸汽或氣體形式的前驅物(例如,含氟前驅物),前驅物通過盲孔1055進入基板處理區域1070但無法直接進入腔室電漿區域1020。在實施例中,噴頭1053厚於通孔1056的最小直徑1050的長度。為了維持激發物種自腔室電漿區域1020穿透至基板處理區域1070的顯著濃度,可藉由形成通孔1056的較大直徑部分部分地通過噴頭1053來限制通孔的最小直徑1050的長度1026。
在實施例中,通孔1056的最小直徑1050的長度可與通孔1056的最小直徑處於相同數量級或較小。噴頭1053可被稱為雙通道噴頭、雙區域噴頭、多通道噴頭或多區域噴頭以表達用於引導前驅物之通孔與盲孔的存在。
如第4A圖中所示,噴頭1053可經設置而作為離子
抑制器。或者,可包括抑制移動進入基板處理區域1070之離子濃度的分隔製程腔室元件(未圖示)。蓋1021與噴頭1053可分別作為第一電極與第二電極,因此蓋1021與噴頭1053可接收不同的電壓。在這些設置中,電功率(例如,RF功率)可被施加至蓋1021、噴頭1053或兩者。舉例而言,電功率可被施加至蓋1021同時噴頭1053(作為離子抑制器)是接地的。基板製程系統可包括RF產生器,RF產生器提供電功率至蓋與/或噴頭1053。施加至蓋1021的電壓可促進腔室電漿區域1020中之電漿的均勻分佈(即,減少局部化電漿)。為了讓電漿形成在腔室電漿區域1020中,絕緣環1024可電絕緣蓋1021與噴頭1053。絕緣環1024可由陶瓷所製成,並具有高崩潰電壓以
避免電花。鄰近剛剛描述之電容耦合電漿部件的基板製程腔室1001的部分可進一步包括冷卻單元(未圖示),冷卻單元包括一或多個冷卻流體通道,以用循環的冷卻劑(例如,水)冷卻暴露至電漿的表面。
在圖示之實施例中,噴頭1053可分散(透過通孔
1056)製程氣體,製程氣體包含氟、氫與/或上述製程氣體由腔室電漿區域1020中之電漿激發後的電漿流出物。在實施例中,引導進入遠端電漿系統1010與/或腔室電漿區域1020的製程氣體可包含氟。製程氣體亦可包括載氣,諸如氦、氬、氮(N2)等等。電漿流出物可包括製程氣體的離子化或中性衍生物,並亦可在提及引導之製程氣體的原子組成時在本文中稱為氟自由基與/或氫自由基。
通孔1056設以抑制離子性帶電物種移動離開腔室
電漿區域1020同時允許未帶電中性或自由基物種通過噴頭1053進入基板處理區域1070。這些未帶電物種可包括與低反應性載氣一起傳送通過通孔1056的高反應性物種。如上所示,可藉由通孔1056降低透過離子性物種的移動,且在某些實例中可完全抑制離子性物種的移動。控制通過噴頭1053的離子性物種數量提高接觸下方晶圓基板之氣體混合物的控制,這接著提高氣體混合物之沉積與/或蝕刻特徵的控制。舉例而言,調整氣體混合物的離子濃度可改變蝕刻選擇性(例如,矽:氮化矽蝕刻速率比)。
在實施例中,通孔1056的數目可在約60與約2000個之間。通孔1056可具有多種形狀,但大部分簡單製成圓形。
在實施例中,通孔1056的最小直徑1050可在約0.5毫米與約20毫米之間或在約1毫米與約6毫米之間。選擇通孔的橫剖面形狀亦有自由性,通孔可被製成圓錐、圓柱或兩種形狀的組合。在不同實施例中,用於引導未激發前驅物進入基板處理區域1070之盲孔1055的數目可在約100與約5000個之間或在約500與約2000個之間。盲孔1055的直徑可在約0.1毫米與約2毫米之間。
通孔1056可被設以控制電漿激發氣體(即,離子性、
自由基與/或中性物種)通過噴頭1053的路程。舉例而言,孔的深寬比(即,孔的直徑比長度)與/或孔的幾何形狀可經控制,以致降低激發氣體中之離子性帶電物種通過噴頭1053的流動。噴頭1053中之通孔1056可包括面對腔室電漿區域1020的錐形部分與面對基板處理區域1070的圓柱形部分。圓柱形部分的比例與尺寸可經設計以控制離子性物種通過進入基板處理區域1070的流動。亦可施加可調整的電偏壓至噴頭1053作為控制離子性物種通過噴頭1053之流動的額外手段。
或者,通孔1056可具有較小的內徑(ID)朝向噴頭
1053的頂面,並具有較大的ID朝向噴頭1053的底面。此外,通孔1056的底部邊緣可經去角以有助於在電漿流出物離開噴頭時均勻地分散基板處理區域1070中之電漿流出物,並促進電漿流出物與前驅物氣體的均勻分佈。較小的ID可配置於沿著通孔1056的多種位置處,且仍可允許噴頭1053降低基板處理區域1070中之離子密度。離子密度的降低起因為在進入基板處理區域1070之前與壁碰撞的數目提高。每次碰撞提高
了藉由自壁獲得或損失電子而中性化離子的可能性。一般而言,通孔1056的較小ID可在約0.2毫米與約20毫米之間。
在其他實施例中,較小的ID可在約1毫米與6毫米之間或在約0.2毫米與約5毫米之間。再者,通孔1056的深寬比(即,較小的ID比孔長度)可大約為1比20。通孔的較小ID可為沿著通孔長度所發現的最小ID。通孔1056的橫剖面形狀可為大致圓柱形、圓錐形或上述之任何組合。
第4B圖係用於根據實施例之製程腔室的噴頭1053
的仰視圖。噴頭1053對應於第4A圖中所示之噴頭。圖示之通孔1056具有較大的內徑(ID)在噴頭1053的底部上並具有較小的ID在頂部。盲孔1055實質上均勻地分散在噴頭的整個表面上,甚至均勻地分散在通孔1056之間,這有助於提供比本文所述之其他實施例更均勻的混合。
當含氟電漿流出物或含氫電漿流出物通過噴頭1053
中之通孔1056抵達時,示範性圖案化基板可由基座(未圖示)支撐於基板處理區域1070中。雖然基板處理區域1070可經裝設而支援電漿用於其他製程(例如,固化),但在實施例中沒有電漿存在於圖案化基板的蝕刻過程中。
可在噴頭1053上方之腔室電漿區域1020或在噴頭1053下方之基板處理區域1070任一者中點燃電漿。電漿存在於腔室電漿區域1020以自含氟前驅物的流入產生氟自由基。將通常處於射頻(RF)範圍的AC電壓施加於製程腔室的傳導頂部(蓋1021)與噴頭1053之間,以在沉積過程中於腔室電漿區域1020中點燃電漿。RF功率供應器產生13.56MHz的高
RF頻率,但亦可單獨或搭配13.56MHz頻率產生其他頻率。
當開啟基板處理區域1070中之底部電漿以固化膜或清潔基板處理區域1070邊上的內部表面任一者時,頂部電漿可處於低功率或無功率。藉由施加AC電壓於噴頭1053與腔室的基座或底部之間來點燃基板處理區域1070中之電漿。當電漿存在時可引導清潔氣體進入基板處理區域1070。
基座可具有熱交換通道,熱交換流體流動通過熱交換通道以控制基板的溫度。此設置允許冷卻或加熱基板溫度以維持相對低溫(自室溫到約120℃)。熱交換流體可包括乙二醇與水。基座的晶圓支撐盤(較佳為鋁、陶瓷或上述之組合)亦可被電阻式加熱而達成相對高溫(自約120℃到約1100°C),這利用嵌入式單迴圈嵌入加熱器元件,加熱器元件設以完成平行同心圓形式的兩個完整旋轉。加熱器元件的外部可鄰近支撐盤的周邊運行,而內部可在具有較小半徑的同心圓之路徑上運行。連接至加熱器元件的線路通過基座的桿。
腔室電漿區域與/或遠端電漿系統中之區域可被稱為遠端電漿區域。在實施例中,自由基前驅物(諸如,氟自由基與/或氫自由基)形成於遠端電漿區域中,並移動進入基板處理區域,自由基前驅物在此可個別地與腔室壁或基板表面反應。在實施例中,可基本上僅施加電漿功率至遠端電漿區域,以確保氟自由基或氫自由基(亦被稱為電漿流出物)不會在基板處理區域中被進一步激發。
在應用腔室電漿區域的實施例中,在與沉積區域分隔的基板處理區域的一個部分中產生激發的電漿流出物。沉
積區域(本文亦習知為基板處理區域)為電漿流出物混合與反應以蝕刻圖案化基板(例如,半導體晶圓)的地方。激發的電漿流出物亦可由惰性氣體(在示範性實例中,氬)所伴隨。基板處理區域在本文之基板蝕刻過程中可描述為「不具有電漿」。「不具有電漿」並非必然意指區域缺少電漿。由於通孔1056的形狀與尺寸,相當低濃度的遠端電漿區域中產生之離子化物種與自由電子確實會移動通過分離板(噴頭/離子抑制器)中之細孔(縫隙)。在某些實施例中,基板處理區域中基本上沒有離子化物種與自由電子的濃度。在實施例中,在遠端電漿激發過程中之基板處理區域1070中的電子溫度可低於0.5eV、低於0.45eV、低於0.4eV或低於0.35eV。腔室電漿區域中之電漿的邊界難以界定,且可能透過噴頭中之縫隙侵入基板處理區域。在感應耦合電漿的實例中,可直接在基板處理區域中進行少量的離子化。再者,可在基板處理區域中產生低密度電漿而不會消除形成膜之期望特徵。激發電漿流出物的產生過程中,具有遠低於腔室電漿區域(或遠端電漿區域,就那點而言)之離子密度的電漿的所有原因不偏離本文所用之「不具有電漿」的範圍。
在實施例中,含氟前驅物流入腔室電漿區域1020的速率在約5sccm與約500sccm之間、約10sccm與約300sccm之間、約25sccm與約200sccm之間、約50sccm與約150sccm之間或約75sccm與約125sccm之間。
進入腔室之含氟前驅物的流動速率可占所有氣體混合物體積的0.05%至約20%;剩餘者為載氣。在實施例中,將
含氟前驅物流入遠端電漿區域,但電漿流出物具有相同的體積流動比。可在引入含氟氣體之前將清除氣體或載氣引入遠端電漿區域以穩定遠端電漿區域中之壓力。
施加至遠端電漿區域的電漿功率可為多種頻率或多
個頻率的組合。在示範性製程系統中,藉由輸送至蓋1021與噴頭1053之間的RF功率來提供電漿。在實施例中,利用電容耦合電漿單元施加能量。在實施例中,當利用FrontierTM或相似系統時,遠端電漿源功率可在約100瓦特與約3000瓦特之間、約200瓦特與約2500瓦特之間、約300瓦特與約2000瓦特之間或約500瓦特與約1500瓦特之間。在實施例中,示範性製程系統中施加之RF頻率可為低於約200kHz的低RF頻率、約10MHz與約15MHz之間的高RF頻率或大於或約1GHz的微波頻率。
在載氣與電漿流出物流入基板處理區域1070的過
程中,基板處理區域1070可被維持在多種壓力下。在實施例中,基板處理區域中之壓力低於或約50托、低於或約30托、低於或約20托、低於或約10托或低於或約5托。在實施例中,壓力可高於或約0.1托、高於或約0.2托、高於或約0.5托或高於或約1托。為了取得實施例,可將壓力上的低界限與壓力上的高界限組合。
在一個或多個實施例中,基板製程腔室1001可被整
合進入多種多製程平台,包括自Applied Materials,Inc.(Santa Clara,Calif)取得的ProducerTM GT、CenturaTM AP與EnduraTM平台。上述製程平台能夠多種處理操作而不破壞真空。可實
施本發明之實施例的製程腔室可包括介電質蝕刻腔室或多種化學氣相沉積腔室等其他類型腔室。
蝕刻系統的實施例可被併入用以產生積體電路晶片
的較大製造系統。第5圖顯示根據實施例之蝕刻、沉積、烘烤與固化腔室的一個上述系統1101。在圖中,一對FOUP(前開式晶圓傳送盒)1102供應基板(例如,300毫米直徑晶圓),基板由機器人手臂1104所接收並在被置入晶圓製程腔室1108a-f的一者前被置入低壓固持區域1106。第二機器人手臂1110可被用來自低壓固持區域1106傳送基板晶圓至晶圓製程腔室1108a-f與返回。各個晶圓製程腔室1108a-f可經裝設以執行多種基板製程操作,包括本文所述之乾蝕刻製程,此外有循環層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預清洗、除氣、定向與其他基板製程。
晶圓製程腔室1108a-f可包括一或多個系統部件,
用以沉積、退火、固化與/或蝕刻基板晶圓上之介電膜。在一個設置中,兩對製程腔室(例如,1108c-d與1108e-f)可被用來沉積介電材料於基板上,而第三對製程腔室(例如,1108a-b)可被用來蝕刻沉積之介電質。在另一種設置中,所有三對腔室(例如,1108a-f)可設以蝕刻基板上之介電膜。在不同實施例中,所述之製程的任何一者或多者可被執行於與圖示之製造系統分隔的腔室中。
基板製程系統由系統控制器所控制。在示範性實施
例中,系統控制器包括硬碟驅動機、軟碟驅動機與處理器。
處理器包含單板電腦(SBC)、類比與數位輸入/輸出板、介面板與步進式馬達控制板。CVD系統的多個部分符合歐洲通用模塊(VME)標準,VME標準界定板、卡片機架與連接器尺寸與種類。VME標準亦界定匯流排結構具有16-位元資料匯流排與24-位元位址匯流排。
系統控制器1157被用來控制馬達、閥、流動控制
器、功率源與執行本文所述之製程方案所需的其他功能。氣體處理系統1155亦可由系統控制器1157所控制,以引導氣體至晶圓製程腔室1108a-f的一者或所有。系統控制器1157可依靠光學感測器的反饋來決定與調整氣體處理系統1155與/或晶圓製程腔室1108a-f中可移動機械組件的位置。機械組件可包括機器人、節流閥與由處於系統控制器1157控制下之馬達所移動的感受器。
在示範性實施例中,系統控制器1157包括硬碟驅動
機(記憶體)、USB埠、軟碟驅動機與處理器。系統控制器1157包括類比與數位輸入/輸出板、介面板與步進式馬達控制板。
包含基板製程腔室1001之多腔室製程系統1101的多個部分由系統控制器1157所控制。系統控制器執行系統控制軟體,系統控制軟體的形式為儲存在電腦可讀取媒介(諸如,硬碟、軟碟或快閃記憶體隨身碟)的電腦程式。亦可應用其他類型的記憶體。電腦程式包括指示時程、氣體混合物、腔室壓力、腔室溫度、RF功率水平、基座位置與特定製程之其他參數的指令組。
可利用控制器所執行之電腦程式產品來實施蝕刻、
沉積或以其他方式處理基板上之膜的製程或清潔腔室的製程。可用任何傳統的電腦可讀取編程語言(諸如,68000組合語言、C、C++、Pascal、Fortran或其他)來寫下電腦程式編碼。
利用傳統的文書編輯器將適當的程式編碼輸入單一檔案或多個檔案中,並儲存或實現於電腦可利用媒介(例如,電腦的記憶體系統)中。若輸入編碼文件為高階語言,編碼則經過編譯而得到的編譯器編碼接著連接於預先編譯的微軟視窗®程序庫的目的碼。為了執行經連接且編譯的目的碼,系統使用者執行目的碼,造成電腦系統負載記憶體中的編碼。接著CPU讀取並執行編碼以實施程式中確認的任務。
使用者與控制器間的介面可透過觸敏螢幕且亦可包
括滑鼠與鍵盤。在一個使用兩個螢幕的實施例中,一個安裝在潔淨室壁中供操作員用而另一個安裝在壁後供維修技術人員用。兩個螢幕可同時顯示相同訊息,在此種例子一次僅有一個設以接收輸入。為了選擇特定的螢幕或功能,操作員用手指或滑鼠觸碰顯示器螢幕上的指定區域。被觸碰的區域改變其突出顏色或顯示新的菜單或螢幕,這確認了操作員的選擇。
本文所用之「基板」可為上方有層形成或上方沒有
層形成的支撐基板。圖案化基板可為絕緣體、或多種摻雜濃度與輪廓的半導體,且舉例而言,可為用於製造積體電路的半導體基板類型。圖案化基板的暴露「矽」主要為矽,但可包括微量濃度的其他元素組成物(諸如,氮、氧、氫、碳)。圖案化基板的暴露「氮化矽」主要為Si3N4,但可包括微量濃度
的其他元素組成物(諸如,氧、氫、碳)。圖案化基板的暴露「氧化矽」主要為SiO2,但可包括微量濃度的其他元素組成物(諸如,氮、氫、碳)。在某些實施例中,利用本文揭露方法蝕刻的氧化矽膜基本上由矽與氧所構成。「氮化鈦」主要為鈦與氮,但可包括微量濃度的其他元素組成物(諸如,氧、氫、碳)。
氮化鈦可基本上由鈦與氮所構成。「氧化鎢」主要為鎢與氧,但可包括微量濃度的其他元素組成物(諸如,氮、氫、碳)。氮化鈦可基本上由鎢與氧所構成。「鎢」主要為鎢,但可包括微量濃度的其他元素組成物(諸如,氮、氧、氫、碳)。
詞彙「前驅物」用來代表參加反應以自表面移除材
料或沉積材料至表面上的任何製程氣體。「電漿流出物」描述離開腔室電漿區域並進入基板處理區域的氣體。電漿流出物處於「激發狀態」,其中至少某些氣體分子處於振動激發、解離與/或離子化狀態。「自由基前驅物」用來描述參與反應以自表面移除材料或沉積材料於表面上的電漿流出物(處理激發狀態的氣體且激發電漿)。「氟自由基」(或「氫自由基」)為包含氟(或氫)的自由基前驅物,但可包含有其他元素組成物。詞句「惰性氣體」指的是在蝕刻或被併入膜時不會形成化學鍵結的任合氣體。示範性惰性氣體包括貴族氣體,但可包括其他氣體,只要在(通常)微量氣體受限於膜中時不形成化學鍵結即可。
通篇應用的詞彙「縫隙」與「溝槽」並未暗示蝕刻
的幾何形狀具有大水平的深寬比。從表面上方觀看,溝槽可呈現圓形、橢圓形、多角形、矩形或多種其他形狀。溝槽的
形狀可為材料島周圍的壕溝。詞彙「介層窗」被用來代表低深寬比溝槽(如自上方觀看),可填充有金屬或未填充有金屬以形成垂直的電連接。本文所用的共形蝕刻製程指的是如同表面般在相同形狀中大致均勻移除表面上的材料,也就是說,蝕刻層的表面與預蝕刻表面大致上平行。本領域具有通常技術人士將理解蝕刻的介面有可能不是100%共形的,因此詞彙「大致」允許可接受的容差。
已經揭露多個實施例,那些熟悉技術人士將理解可
在不悖離揭露實施例的精神下使用多種修飾、替代構造與等效物。此外,並未描述許多習知的製程與元件以避免不必要地干擾本發明。因此,上方描述不應視為本發明範圍的限制。
當提供數值範圍時,除非文中清楚以其他方式標
出,否則可理解在範圍的上限與下限之間的各個其中數值至下限單位的十分之一亦明確地揭露。包括了任何指明數值或指明範圍其中的數值之間的各個較小範圍與指明範圍中的任何其他指明數值或其中數值。在指明範圍中任何明確排除界限的情況下,這些較小範圍的上限與下限可獨立地包含或排除於範圍中,且較小範圍中包括界限任一者、兩個界限都不包含或兩個界限都包含的各個範圍亦包含於發明中。指明範圍包括界限的一或兩者,亦包括排除那些包括數值之任一者或兩者的範圍。
本文與隨附申請專利範圍中所用的單一形式「一」與「該」包括複數指示物,除非文中清楚地以其他方式指明。因此,舉例而言,提及「一製程」包括複數個上述製程,而
提及「該介電材料」包括提及一或多個介電材料與那些熟悉技術人士所習知的等效物等等。
再者,詞彙「包括」、「包含」用於本說明書與後續申請專利範圍時試圖指明所述特徵、整數、部件或步驟的存在,但不排除存在或額外有一或多個其他特徵、整數、部件、步驟、動作或基團。
Claims (17)
- 一種調節一基板處理區域的方法,該方法包括以下步驟:在一調節電漿中激發一調節含氟前驅物以產生數個調節電漿流出物;暴露數個內部製程腔室壁至該些調節電漿流出物,其中該些內部製程腔室壁在一基板處理區域的邊上,且暴露該些內部製程腔室壁至該些調節電漿流出物之步驟在該些內部製程腔室壁上造成一化學終端;(i)在暴露該些內部製程腔室壁至該些調節電漿流出物的操作之後傳送一基板進入該基板處理區域中,其中該基板包括暴露矽區域;(ii)流動一蝕刻含氟前驅物進入一遠端電漿區域,該遠端電漿區域流體耦接至該基板處理區域,同時在該遠端電漿區域中形成一遠端電漿以產生數個蝕刻電漿流出物;及(iii)藉由流動該些蝕刻電漿流出物通過一噴頭中之數個通孔而進入該基板處理區域以蝕刻該暴露矽區域,其中該噴頭配置於該遠端電漿區域與該基板處理區域之間,其中重覆的基板處理不會使該些內部製程腔室壁上的該化學終端隨著時間演變。
- 如請求項1之方法,其中該調節含氟前驅物包括氟原子、雙原子氟、三氟化硼、三氟化氯、三氟化氮、全氟化碳氫化合物、六氟化硫與二氟化氙的一或多者。
- 如請求項1之方法,其中該蝕刻含氟前驅物包括氟原子、雙原子氟、三氟化硼、三氟化氯、三氟化氮、氟化氫、氟化碳氫化合物、六氟化硫與二氟化氙的一或多者。
- 如請求項1之方法,其中在暴露該些內部製程腔室壁至該些調節電漿流出物的操作過程中,該基板處理區域基本上不具有氫。
- 如請求項1之方法,其中該調節電漿是一在該基板處理區域內部的本地調節電漿。
- 如請求項1之方法,其中該調節電漿是一在該基板處理區域外部的遠端調節電漿,且該些調節電漿流出物自該遠端電漿流入該基板處理區域。
- 如請求項1之方法,其中該重覆的基板處理在900個基板上表現出一穩定矽蝕刻速率。
- 一種調節一基板處理區域的方法,該方法包括以下步驟: 在一調節電漿中激發一含氫前驅物以產生數個調節電漿流出物;暴露數個內部製程腔室壁至該些調節電漿流出物,其中該些內部製程腔室壁在一基板處理區域的邊上,其中在暴露該些內部製程腔室壁至該些調節電漿流出物的操作過程中,該基板處理區域基本上不具有氟;執行基板蝕刻的多個循環,各循環包括:(i)在暴露該些內部製程腔室壁至該些調節電漿流出物的操作之後傳送一基板進入該基板處理區域中,其中該基板包括一暴露矽部分;(ii)流動一含氟前驅物進入一遠端電漿區域,該遠端電漿區域流體耦接至該基板處理區域,同時在該遠端電漿區域中形成一遠端電漿以產生數個蝕刻電漿流出物;及(iii)藉由流動該些蝕刻電漿流出物通過一噴頭中之數個通孔而進入該基板處理區域以選擇性蝕刻該暴露矽部分,其中該噴頭配置於該遠端電漿區域與該基板處理區域之間。
- 如請求項8之方法,其中該含氫前驅物是一含氮與氫前驅物。
- 如請求項8之方法,其中該含氫前驅物包括氨與聯氨的一或多者。
- 如請求項8之方法,其中該含氟前驅物包括氟原子、雙原子氟、三氟化硼、三氟化氯、三氟化氮、氟化氫、氟化碳氫化合物、六氟化硫與二氟化氙的一或多者。
- 如請求項8之方法,其中該調節電漿是一在該基板處理區域內部的本地調節電漿。
- 如請求項8之方法,其中該調節電漿是一在該基板處理區域外部的遠端調節電漿,且該些調節電漿流出物自該遠端電漿流入該基板處理區域。
- 如請求項8之方法,其中暴露該些內部製程腔室壁至該些調節電漿流出物之步驟在該些內部製程腔室壁上造成一化學終端。
- 如請求項14之方法,其中該基板蝕刻的多個循環不會使該些內部製程腔室壁上的該化學終端隨著時間演變。
- 如請求項8之方法,其中該基板蝕刻的多個循環的每個循環移除一相同蝕刻量的該暴露矽部分。
- 如請求項8之方法,其中該暴露矽部分的一蝕刻速率在基板處理的900個循環上不隨著時間演變。
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US20160086808A1 (en) | 2016-03-24 |
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