JP5779482B2 - プラズマ処理装置およびプラズマ処理方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
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- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
- G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
- G05B13/0205—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric not using a model or a simulator of the controlled system
- G05B13/021—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric not using a model or a simulator of the controlled system in which a variable is automatically adjusted to optimise the performance
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- G—PHYSICS
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- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
- G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
- G05B13/04—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators
- G05B13/042—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric involving the use of models or simulators in which a parameter or coefficient is automatically adjusted to optimise the performance
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS], computer integrated manufacturing [CIM]
- G05B19/4184—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS], computer integrated manufacturing [CIM] characterised by fault tolerance, reliability of production system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32926—Software, data control or modelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
Description
101 マスク材
102 エッチング深さ
103 加工寸法
200 ロット内の変動
201 ロット間の変動
300 プラズマ処理室
301 ウェハ
302 アクチュエータ
303 プロセスモニタ
304、305 ウェハカセット
306 目標値
307 第一の補正量計算ユニット
308 制御装置
309 第一の操作変数追加判断ユニット
310 第二の補正量計算ユニット
312 第二の操作変数追加判断ユニット
313 第三の補正量計算ユニット
315 試料台
800 高周波バイアス電力の上限値
801 酸素(O2)ガスの流量
802 高周波バイアス電力の上限値800を超える処理枚数である処理枚数
Claims (8)
- プラズマ処理が行われるプラズマ処理室と、
前記プラズマ処理室内の状態をモニタするプロセスモニタと、
プラズマ処理条件の構成要素であるパラメータを制御するアクチュエータと、
前記パラメータの一つを第1の操作変数とし、前記プロセスモニタによりモニタされたプラズマ処理中のモニタ値と前記プラズマ処理中のモニタ値の目標値との第1の偏差を算出し、前記プラズマ処理中のモニタ値と前記第1の操作変数との予め取得された相関関係を基に前記第1の偏差に対応する前記第1の操作変数の補正量を算出する第1の補正量計算ユニットと、
前記パラメータの1つを第2の操作変数としたとき、前記第1の操作変数の補正量により前記第1の操作変数が前記第1の操作変数の限界値を超えるかどうかを判断する第1の操作変数追加判断ユニットと、
プラズマ処理中のモニタ値と前記第2の操作変数との予め取得された相関関係を基に第2の偏差に対応する前記第2の操作変数の補正量を算出する第2の補正量計算ユニットと、
前記第1の操作変数が前記第1の操作変数の補正量により前記第1の操作変数の限界値を超えると前記第1の操作変数追加判断ユニットによって判断されたとき、前記第1の操作変数を前記第1の操作変数の限界値とする前記第1の操作変数の補正量および前記第2の補正量計算ユニットにより算出された第2の操作変数の補正量に基づいて次ウェハのプラズマ処理条件を補正する制御装置とを備え、
前記第2の偏差は、プラズマ処理中のモニタ値と第1の操作変数との予め取得された相関関係から第1の操作変数を限界値として算出されたモニタ値と前記目標値との偏差であることを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記第2の操作変数の補正量により前記第2の操作変数が前記第2の操作変数の限界値を超えるかどうかを判断する第2の操作変数追加判断ユニットと、
プラズマ処理中のモニタ値と第3の操作変数との予め取得された相関関係を基に第3の偏差に対応する前記第3の操作変数の補正量を算出する第3の補正量計算ユニットとをさらに備え、
前記第1の操作変数が前記第1の操作変数の補正量により前記第1の操作変数の限界値を超えると前記第1の操作変数追加判断ユニットによって判断されるとともに前記第2の操作変数が前記第2の操作変数の補正量により前記第2の操作変数の限界値を超えないと前記第2の操作変数追加判断ユニットによって判断されたとき、前記制御装置は、前記3の操作変数の補正量を0とするとともに前記第1の操作変数を前記第1の操作変数の限界値とする前記第1の操作変数の補正量および前記第2の補正量計算ユニットにより算出された第2の操作変数の補正量に基づいて次ウェハのプラズマ処理条件を補正し、
前記第3の偏差は、プラズマ処理中のモニタ値と第2の操作変数との予め取得された相関関係から第2の操作変数を限界値として算出されたモニタ値と前記目標値との偏差であることを特徴とするプラズマ処理装置。 - 請求項1または請求項2に記載のプラズマ処理装置において、
前記プラズマ処理室は、プラズマエッチング装置に備えられていることを特徴とするプラズマ処理装置。 - 請求項3に記載のプラズマ処理装置において、
前記プラズマエッチング装置に備えられガスの流量を制御するマスフローコントローラのガス流量を前記第1の操作変数とすることを特徴とするプラズマ処理装置。 - Run-to-Run制御により試料をプラズマ処理するプラズマ処理方法において、
プラズマ処理条件の構成要素であるパラメータの一つを第1の操作変数とし、前記プラズマ処理が行われるプラズマ処理室内の状態をモニタするプロセスモニタによりモニタされたプラズマ処理中のモニタ値と前記プラズマ処理中のモニタ値の目標値との第1の偏差を算出し、
前記プラズマ処理中のモニタ値と前記第1の操作変数との予め取得された相関関係および前記第1の偏差を用いて前記第1の操作変数の補正量を算出し、
前記パラメータの1つを第2の操作変数としたとき、前記第1の操作変数の補正量により前記第1の操作変数が前記第1の操作変数の限界値を超えるかどうかを判断し、
前記第1の操作変数の補正量により前記第1の操作変数が前記第1の操作変数の限界値を超えると判断されたとき、プラズマ処理中のモニタ値と第1の操作変数との予め取得された相関関係から第1の操作変数を限界値として算出されたモニタ値と前記目標値との第2の偏差を算出し、
プラズマ処理中のモニタ値と第2の操作変数との予め取得された相関関係および前記第2の偏差を用いて前記第2の操作変数の補正量を算出するとともに前記第1の操作変数を前記第1の操作変数の限界値とする前記第1の操作変数の補正量および前記算出された第2の操作変数の補正量に基づいて次ウェハのプラズマ処理条件を補正することを特徴とするプラズマ処理方法。 - 請求項5に記載のプラズマ処理方法において、
前記第2の操作変数の補正量により前記第2の操作変数が前記第2の操作変数の限界値を超えるかどうかを判断し、
前記第1の操作変数の補正量により前記第1の操作変数が前記第1の操作変数の限界値を超えると判断されるとともに前記第2の操作変数の補正量により前記第2の操作変数が前記第2の操作変数の限界値を超えないと判断されたとき、プラズマ処理中のモニタ値と第2の操作変数との予め取得された相関関係から第2の操作変数を限界値として算出されたモニタ値と前記目標値との第3の偏差を算出し、
プラズマ処理中のモニタ値と第3の操作変数との予め取得された相関関係および前記第3の偏差を用いて前記第3の操作変数の補正量を算出し、前記3の操作変数の補正量を0とするとともに前記第1の操作変数を前記第1の操作変数の限界値とする前記第1の操作変数の補正量および前記算出された第2の操作変数の補正量に基づいて次ウェハのプラズマ処理条件を補正することを特徴とするプラズマ処理方法。 - 請求項5または請求項6に記載のプラズマ処理方法において、
前記プラズマ処理は、プラズマエッチングであることを特徴とするプラズマ処理方法。 - 請求項7に記載のプラズマ処理方法において、
前記プラズマ処理室に供給されるガスの流量を前記第1の操作変数とすることを特徴とするプラズマ処理方法。
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JP2011249242A JP5779482B2 (ja) | 2011-11-15 | 2011-11-15 | プラズマ処理装置およびプラズマ処理方法 |
TW100148893A TWI485769B (zh) | 2011-11-15 | 2011-12-27 | Plasma processing device and plasma processing method |
KR1020120006929A KR101274527B1 (ko) | 2011-11-15 | 2012-01-20 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
US13/356,676 US8828184B2 (en) | 2011-11-15 | 2012-01-24 | Plasma processing apparatus and plasma processing method |
US14/449,516 US9824866B2 (en) | 2011-11-15 | 2014-08-01 | Plasma processing method |
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