JP2021145007A - 基板処理方法及び基板処理システム - Google Patents
基板処理方法及び基板処理システム Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 108
- 239000000758 substrate Substances 0.000 title claims abstract description 27
- 238000003672 processing method Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 claims abstract description 60
- 230000000630 rising effect Effects 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 239
- 238000012544 monitoring process Methods 0.000 description 13
- 238000005530 etching Methods 0.000 description 12
- 238000007385 chemical modification Methods 0.000 description 7
- 238000004891 communication Methods 0.000 description 7
- 238000009966 trimming Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
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- 150000001875 compounds Chemical class 0.000 description 2
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- 230000006870 function Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010606 normalization Methods 0.000 description 2
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- 238000007792 addition Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
Description
先ず、一実施形態にかかるプラズマ処理システムについて説明する。図1は、プラズマ処理システム1の構成の概略を示す説明図である。プラズマ処理システム1では、基板としてのウェハWに対して、ALEプロセスを行う。
次に、上述したガス供給部20について説明する。図2は、ガス供給部20の構成の概略を示す説明図である。
次に、以上のように構成されたプラズマ処理システムを用いて行われるALEプロセスについて説明する。
ガス供給部20からプラズマ処理チャンバ10の内部に、処理ガスとして例えばCl2(塩素)ガスを供給し、ウェハW(シリコン)の表面に吸着させ、SiCl化合物に改質させる。
ガス供給部20からプラズマ処理チャンバ10の内部に、処理ガスとして例えばAr(アルゴン)ガスを供給し、当該Arイオンを生成する。そして、Arイオンによって、ウェハWの表面のSiCl化合物だけを選択的にエッチングする。
上述したようにALEプロセスでは、化学修飾工程とエッチング工程を行うため、処理ガスの切り替えを繰り返し、処理ガスのON/OFFが短時間で行われる。このように短時間で処理ガスのON/OFFを行うALEプロセスでは、プロセス中にリアルタイムで精度よくガス流量を監視することが必要となる。
F=P1×Fs(t)/Ps(t) ・・・(1)
F:規格化されたガスの流量(sccm)、P1:流量制御器22の1次圧力(psi)、t:ガス供給開始からの経過時間(min)、Fs(t):時間tにおけるガス流量の設定値(sccm)、Ps(t):時間tにおける流量制御器22の1次圧力(psi)
工程S1では、ALEプロセスを行う前に、当該ALEプロセスのレシピを設定する。具体的には、ガス供給開始からの経過時間tにおける、ガス流量の設定値Fs(t)とガス圧力の設定値Ps(t)とを設定する。
工程S1での事前設定が終了すると、プラズマ処理チャンバ10の内部に載置されたウェハWに対して、ALEプロセスを開始する。すなわち、工程S2では、ガス供給部20からプラズマ処理チャンバ10の内部に、処理ガスの供給を開始する。
工程S3では、処理ガスの供給中において、流量制御器22によって処理ガスの1次圧力P1を測定する。
工程S4では、下記式(1)を用いて、流量制御器22で測定された処理ガスの1次圧力P1をガス流量に換算して、規格化する。
F=P1×Fs(t)/Ps(t) ・・・(1)
F:規格化されたガス流量(sccm)、P1:流量制御器22の1次圧力(psi)、t:ガス供給開始からの経過時間(min)、Fs(t):時間tにおけるガス流量の設定値(sccm)、Ps(t):時間tにおける流量制御器22の1次圧力(psi)
ウェハWに対するALEプロセスが終了すると、工程S5では、ガス供給部20からプラズマ処理チャンバ10の内部への処理ガスの供給を停止する。
工程S6では、工程S3で測定された処理ガスの1次圧力P1が、工程S1で設定された閾値Pt以上になる時間Tを算出する。具体的には、図5に示したように前方時間Taと後方時間Tbを含む時間Tを算出する。そして、この時間Tでは、ガスON時のみの圧力の波形を抜粋してトリミングすることができる。
工程S7では、工程S4で規格化されたガス流量Fを、工程S6で算出された時間Tで積分して、処理ガスの総流量を算出する。この処理ガスの総流量は、1回のガスON/OFFにおいて、ガス供給部20からプラズマ処理チャンバ10に供給された処理ガスの総流量である。
工程S8では、工程S7で算出された処理ガスの総流量が、所望の範囲であるか否かを判定する。所望の範囲は、ALEプロセスのレシピに応じて、ALEプロセスを行う前に、予め設定しておく。例えば工程S1において、装置の立ち上げ時などに流量制御器22のガス流量のデータと実際のガス流量のデータを取得しておいて、設定してもよい。また、例えばガスON/OFFを繰り返し行い、これらのガス流量の平均値を算出してもよい。
工程S9では、工程S8において処理ガスの総流量が所望の範囲内であると判定された場合、ALEプロセスを続行する。
工程S10では、工程S8において処理ガスの総流量が所望の範囲外であると判定された場合、流量制御器22におけるガス流量の設定値Fs(t)をフィードバック制御して調整する。
1a プラズマ処理装置
1b 制御部
10 プラズマ処理チャンバ
20 ガス供給部
22 流量制御器
W ウェハ
Claims (9)
- チャンバに供給されたガスを用いて基板を処理する方法であって、
(a)前記チャンバに供給するガスの圧力を測定して当該ガスの流量を制御する流量制御器において、制御対象となるガスの圧力の閾値を設定する工程と、
(b)前記チャンバの内部にガスを供給する工程と、
(c)前記流量制御器におけるガスの圧力を測定する工程と、
(d)前記チャンバの内部へのガスの供給を停止する工程と、
(e)前記(c)工程で測定されたガスの圧力が、前記閾値以上になる時間を算出する工程と、
(f)前記(c)工程で測定されたガスの圧力と、前記(e)工程で算出された時間とに基づいて、前記チャンバに供給されるガスの総流量を算出する工程と、
を含む、基板処理方法。 - (g)下記式(1)を用いて、前記(c)工程で測定されたガスの圧力をガスの流量に換算し、規格化されたガスの流量を算出する工程をさらに含む、請求項1に記載の基板処理方法。
F=P×Fs(t)/Ps(t) ・・・(1)
F:規格化されたガスの流量、P:前記(c)工程で測定されたガスの圧力、t:ガス供給開始からの経過時間、Fs(t):時間tにおけるガスの流量の設定値、Ps(t):時間tにおけるガスの圧力値 - 前記(f)工程において、前記(g)工程で規格化されたガスの流量を、前記(e)工程で算出された時間で積分して、前記ガスの総流量を算出する、請求項2に記載の基板処理方法。
- 前記(e)工程で算出される時間は、
前記(c)工程で測定されるガスの圧力の立ち上がり時において、当該圧力が前記閾値に到達する前の前方時間と、
前記(c)工程で測定されるガスの圧力の立ち下がり時において、当該圧力が前記閾値に到達した後の後方時間と、
を含み、
前記前方時間と前記後方時間は、前記(a)工程において設定される、請求項1〜3のいずれか一項に記載の基板処理方法。 - (h)前記(f)工程で算出されたガスの総流量が、所望範囲の流量であるか否かを判定する工程をさらに含む、請求項1〜4のいずれか一項に記載の基板処理方法。
- 前記(h)工程において、前記(f)工程で算出されたガスの総流量が所望範囲内である場合、基板処理を続行する、請求項5に記載の基板処理方法。
- 前記(h)工程において、前記(f)工程で算出されたガスの総流量が所望範囲外である場合、前記流量制御器におけるガスの流量の設定値をフィードバック制御する、請求項5に記載の基板処理方法。
- 一の基板に対して基板を処理する際、前記(a)工程〜前記(f)工程を繰り返し行い、
各前記(f)工程で算出されたガスの総流量の平均を算出する、請求項1〜7のいずれか一項に記載の基板処理方法。 - ガスを用いて基板を処理するシステムであって、
ガス供給口とガス排出口を有するチャンバと、
前記チャンバに供給するガスの圧力を測定して当該ガスの流量を制御する流量制御器と、
制御部と、
を備え、
前記制御部は、
(a)前記流量制御器において、制御対象となるガスの圧力の閾値を設定する工程と、
(b)前記チャンバの内部にガスを供給する工程と、
(c)前記流量制御器におけるガスの圧力を測定する工程と、
(d)前記チャンバの内部へのガスの供給を停止する工程と、
(e)前記(c)工程で測定されたガスの圧力が、前記閾値以上になる時間を算出する工程と、
(f)前記(c)工程で測定されたガスの圧力と、前記(e)工程で算出された時間とに基づいて、前記チャンバに供給されるガスの総流量を算出する工程と、
を含む処理を実行するように前記システムを制御する、基板処理システム。
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