JP2013105923A - プラズマ処理装置およびプラズマ処理方法 - Google Patents
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- NBVXSUQYWXRMNV-UHFFFAOYSA-N monofluoromethane Natural products FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
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- 238000007781 pre-processing Methods 0.000 description 1
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Abstract
【解決手段】本発明はプラズマ処理を行うプラズマ処理室と、プラズマ処理室内の状態をモニタするプロセスモニタと、プラズマ処理条件を構成するパラメータを制御するアクチュエータと、プロセスモニタによりモニタされたプロセスモニタ値とプロセスモニタの目標値との偏差および予め取得された、プロセスモニタ値とパラメータである操作変数との相関関係を用いて操作変数の補正量を算出するN+1個の補正量計算ユニットと、N番目の操作変数の次に優先度の高い操作変数を追加するN個の操作変数追加ユニットとを備え、N番目の操作変数追加ユニットは、N+1番目の補正量計算ユニットにより算出された補正量をN+1番目の操作変数の補正量とすることを特徴とするプラズマ処理装置である。
【選択図】 図1
Description
101 マスク材
102 エッチング深さ
103 加工寸法
200 ロット内の変動
201 ロット間の変動
300 プラズマ処理室
301 ウェハ
302 アクチュエータ
303 プロセスモニタ
304、305 ウェハカセット
306 目標値
307 第一の補正量計算ユニット
308 制御装置
309 第一の操作変数追加判断ユニット
310 第二の補正量計算ユニット
312 第二の操作変数追加判断ユニット
313 第三の補正量計算ユニット
315 試料台
800 高周波バイアス電力の上限値
801 酸素(O2)ガスの流量
802 高周波バイアス電力の上限値800を超える処理枚数である処理枚数
Claims (5)
- プラズマ処理を行うプラズマ処理室と、
前記プラズマ処理室内の状態をモニタするプロセスモニタと、
プラズマ処理条件を構成するパラメータを制御するアクチュエータと、
前記プロセスモニタによりモニタされたプロセスモニタ値と前記プロセスモニタの目標値との偏差および予め取得された、プロセスモニタ値と前記パラメータである操作変数との相関関係を用いて前記操作変数の補正量を算出するN+1個の補正量計算ユニットと、
N番目の操作変数の次に優先度の高い操作変数を追加するN個の操作変数追加ユニットとを備え、
N番目の操作変数追加ユニットは、N+1番目の補正量計算ユニットにより算出された補正量により前記N+1番目の操作変数が限界値を超えない場合、前記N+1番目の補正量計算ユニットにより算出された補正量をN+1番目の操作変数の補正量とすることを特徴とするプラズマ処理装置。 - 請求項1記載のプラズマ処理装置において、
前記N番目の操作変数追加ユニットは、さらにN番目の操作変数の補正量をN番目の操作変数の限界値となる補正量とすることを特徴とするプラズマ処理装置。 - 請求項1記載のプラズマ処理装置において、
前記補正量計算ユニットは、2個であることを特徴とするプラズマ処理方法。 - 請求項1記載のプラズマ処理装置において、
前記操作変数の一つは、プラズマ生成用ガスの流量であることを特徴とするプラズマ処理装置。 - プラズマ処理を行うプラズマ処理室と、前記プラズマ処理室内の状態をモニタするプロセスモニタと、プラズマ処理条件を構成するパラメータを制御するアクチュエータとを備えるプラズマ処理装置を用いてRun-to-Run制御により試料をプラズマ処理するプラズマ処理方法において、
前記プロセスモニタによりモニタされたプロセスモニタ値と前記プロセスモニタの目標値との偏差および予め取得された、プロセスモニタ値と前記パラメータである操作変数との相関関係を用いて前記操作変数の補正量を算出するN+1個の補正量計算ユニットと、
N番目の操作変数の次に優先度の高い操作変数を追加するN個の操作変数追加ユニットとを備え、
N番目の操作変数追加ユニットよって、N+1番目の補正量計算ユニットにより算出された補正量により前記N+1番目の操作変数が限界値を超えない場合、前記N+1番目の補正量計算ユニットにより算出された補正量をN+1番目の操作変数の補正量としてRun-to-Run制御を行うことを特徴とするプラズマ処理方法。
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JP2011249242A JP5779482B2 (ja) | 2011-11-15 | 2011-11-15 | プラズマ処理装置およびプラズマ処理方法 |
TW100148893A TWI485769B (zh) | 2011-11-15 | 2011-12-27 | Plasma processing device and plasma processing method |
KR1020120006929A KR101274527B1 (ko) | 2011-11-15 | 2012-01-20 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
US13/356,676 US8828184B2 (en) | 2011-11-15 | 2012-01-24 | Plasma processing apparatus and plasma processing method |
US14/449,516 US9824866B2 (en) | 2011-11-15 | 2014-08-01 | Plasma processing method |
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Cited By (6)
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JP2015133449A (ja) * | 2014-01-15 | 2015-07-23 | 株式会社荏原製作所 | 基板処理装置の異常検出装置、及び基板処理装置 |
JP2016143738A (ja) * | 2015-01-30 | 2016-08-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法並びに解析方法 |
JP2019033165A (ja) * | 2017-08-08 | 2019-02-28 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理システム |
JP2019114593A (ja) * | 2017-12-21 | 2019-07-11 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置の運転方法 |
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US8828184B2 (en) | 2014-09-09 |
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