JP6504770B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- JP6504770B2 JP6504770B2 JP2014186820A JP2014186820A JP6504770B2 JP 6504770 B2 JP6504770 B2 JP 6504770B2 JP 2014186820 A JP2014186820 A JP 2014186820A JP 2014186820 A JP2014186820 A JP 2014186820A JP 6504770 B2 JP6504770 B2 JP 6504770B2
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- 238000012545 processing Methods 0.000 title claims description 169
- 238000003672 processing method Methods 0.000 title claims description 15
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- 238000005530 etching Methods 0.000 description 11
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- 230000000694 effects Effects 0.000 description 10
- 230000006872 improvement Effects 0.000 description 10
- 230000006641 stabilisation Effects 0.000 description 10
- 238000011105 stabilization Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 239000002245 particle Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 208000028659 discharge Diseases 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
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- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 102100034929 Cell division cycle protein 27 homolog Human genes 0.000 description 2
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- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000010183 spectrum analysis Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 230000001186 cumulative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
Description
Claims (4)
- 内部に試料台が配置される処理容器と、
前記処理容器内にガスを供給するガス供給システムと、
前記試料台に接続され前記処理容器内にプラズマ発生用の高周波を導入する高周波発生源と、
前記ガス供給システム及び前記高周波発生源を制御する制御装置と、
を備え、
前記制御装置は、
第1ステップにおいて、前記高周波発生源を電力(RFパワー)が含まれる第1エネルギー条件で駆動し、
第2ステップにおいて、前記高周波発生源を電力(RFパワー)が含まれる第2エネルギー条件で駆動し、
前記第1ステップと、前記第2ステップの切り替わり時刻は、前記高周波発生源のRFパワーの切り替わり時刻であり、この時刻よりも先に、前記ガス供給システムから前記処理容器内に供給されるガス種を切り替え、切り替え直後の初期期間のガス流量を、前記初期期間経過後の安定期間におけるガス流量よりも大きく設定する、
ことを特徴とするプラズマ処理装置。 - 前記処理容器内のガスの排気効率を調整する排気効率調整手段を更に備え、
前記制御装置は、前記排気効率調整手段を制御して、前記初期期間内において、前記処理容器内のガスの排気効率を、前記安定期間におけるガスの排気効率よりも増加させる、
ことを特徴とする請求項1に記載のプラズマ処理装置。 - 内部に試料台が配置される処理容器と、
前記処理容器内にガスを供給するガス供給システムと、
前記試料台に接続され前記処理容器内にプラズマ発生用の高周波を導入する高周波発生源と、
前記ガス供給システム及び前記高周波発生源を制御する制御装置と、
を備えたプラズマ処理装置を用いたプラズマ処理方法であって、
前記高周波発生源を電力(RFパワー)が含まれる第1エネルギー条件で駆動する第1ステップと、
前記高周波発生源を電力(RFパワー)が含まれる第2エネルギー条件で駆動する第2ステップと、
を備え、
前記第1ステップと、前記第2ステップの切り替わり時刻は、前記高周波発生源のRFパワーの切り替わり時刻であり、この時刻よりも先に、前記ガス供給システムから前記処理容器内に供給されるガス種を切り替え、切り替え直後の初期期間のガス流量を、前記初期期間経過後の安定期間におけるガス流量よりも大きく設定する、
ことを特徴とするプラズマ処理方法。 - 前記初期期間内において、前記処理容器内のガスの排気効率を、前記安定期間におけるガスの排気効率よりも増加させる、
ことを特徴とする請求項3に記載のプラズマ処理方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2014186820A JP6504770B2 (ja) | 2014-06-30 | 2014-09-12 | プラズマ処理装置及びプラズマ処理方法 |
KR1020150086389A KR102490189B1 (ko) | 2014-06-30 | 2015-06-18 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
US14/751,655 US10204763B2 (en) | 2014-06-30 | 2015-06-26 | Plasma processing apparatus and plasma processing method |
TW104120866A TWI659448B (zh) | 2014-06-30 | 2015-06-29 | 電漿處理裝置及電漿處理方法 |
CN201510379033.6A CN105225913B (zh) | 2014-06-30 | 2015-06-30 | 等离子体处理装置以及等离子体处理方法 |
US16/239,756 US10861675B2 (en) | 2014-06-30 | 2019-01-04 | Plasma processing apparatus and plasma processing method |
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JP2014134500 | 2014-06-30 | ||
JP2014134500 | 2014-06-30 | ||
JP2014186820A JP6504770B2 (ja) | 2014-06-30 | 2014-09-12 | プラズマ処理装置及びプラズマ処理方法 |
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JP2016027592A JP2016027592A (ja) | 2016-02-18 |
JP6504770B2 true JP6504770B2 (ja) | 2019-04-24 |
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US (2) | US10204763B2 (ja) |
JP (1) | JP6504770B2 (ja) |
KR (1) | KR102490189B1 (ja) |
CN (1) | CN105225913B (ja) |
TW (1) | TWI659448B (ja) |
Families Citing this family (4)
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US9941121B1 (en) | 2017-01-24 | 2018-04-10 | International Business Machines Corporation | Selective dry etch for directed self assembly of block copolymers |
JP6869765B2 (ja) * | 2017-03-23 | 2021-05-12 | 株式会社日立ハイテク | プラズマ処理装置及びプラズマ処理方法 |
JP7296699B2 (ja) * | 2018-07-02 | 2023-06-23 | 東京エレクトロン株式会社 | ガス供給システム、プラズマ処理装置およびガス供給システムの制御方法 |
KR20230168145A (ko) | 2022-06-03 | 2023-12-12 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치, 플라즈마 처리 방법, 압력 밸브 제어 장치, 압력 밸브 제어 방법 및 압력 조정 시스템 |
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JPH07130495A (ja) | 1993-11-05 | 1995-05-19 | Tokyo Electron Ltd | マグネトロン型プラズマ処理装置 |
JP2002297244A (ja) * | 2001-04-03 | 2002-10-11 | Matsushita Electric Ind Co Ltd | 反応室の圧力制御方法および装置 |
US7115520B2 (en) * | 2003-04-07 | 2006-10-03 | Unaxis Usa, Inc. | Method and apparatus for process control in time division multiplexed (TDM) etch process |
JP2006024775A (ja) | 2004-07-08 | 2006-01-26 | Tokyo Electron Ltd | プラズマ処理装置、該装置の制御方法及び該方法を実行するプログラム |
JP4179311B2 (ja) * | 2004-07-28 | 2008-11-12 | 東京エレクトロン株式会社 | 成膜方法、成膜装置及び記憶媒体 |
JP4512533B2 (ja) * | 2005-07-27 | 2010-07-28 | 住友精密工業株式会社 | エッチング方法及びエッチング装置 |
US20070151668A1 (en) * | 2006-01-04 | 2007-07-05 | Tokyo Electron Limited | Gas supply system, substrate processing apparatus, and gas supply method |
JP4943047B2 (ja) * | 2006-04-07 | 2012-05-30 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
CN101523570A (zh) | 2006-10-13 | 2009-09-02 | 欧姆龙株式会社 | 利用了等离子反应炉处理系统的电子装置的制造方法 |
US7775236B2 (en) * | 2007-02-26 | 2010-08-17 | Applied Materials, Inc. | Method and apparatus for controlling gas flow to a processing chamber |
JP5723678B2 (ja) | 2011-05-31 | 2015-05-27 | 東京エレクトロン株式会社 | プラズマ処理装置及びそのガス供給方法 |
JP5887201B2 (ja) * | 2012-05-14 | 2016-03-16 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、基板処理プログラム、及び記憶媒体 |
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- 2014-09-12 JP JP2014186820A patent/JP6504770B2/ja active Active
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- 2015-06-18 KR KR1020150086389A patent/KR102490189B1/ko active IP Right Grant
- 2015-06-26 US US14/751,655 patent/US10204763B2/en active Active
- 2015-06-29 TW TW104120866A patent/TWI659448B/zh active
- 2015-06-30 CN CN201510379033.6A patent/CN105225913B/zh active Active
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Also Published As
Publication number | Publication date |
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TWI659448B (zh) | 2019-05-11 |
CN105225913A (zh) | 2016-01-06 |
US10861675B2 (en) | 2020-12-08 |
JP2016027592A (ja) | 2016-02-18 |
KR102490189B1 (ko) | 2023-01-18 |
US20190139744A1 (en) | 2019-05-09 |
CN105225913B (zh) | 2018-10-16 |
KR20160002356A (ko) | 2016-01-07 |
TW201606846A (zh) | 2016-02-16 |
US10204763B2 (en) | 2019-02-12 |
US20150380282A1 (en) | 2015-12-31 |
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