TWI625824B - 銅線間的氣隙 - Google Patents

銅線間的氣隙 Download PDF

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TWI625824B
TWI625824B TW103146115A TW103146115A TWI625824B TW I625824 B TWI625824 B TW I625824B TW 103146115 A TW103146115 A TW 103146115A TW 103146115 A TW103146115 A TW 103146115A TW I625824 B TWI625824 B TW I625824B
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substrate processing
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copper wires
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普羅亞思維諾德Ｒ
英格爾尼汀Ｋ
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應用材料股份有限公司
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Abstract

茲描述在圖案化基板上的相鄰銅線間形成「氣隙」的方法。通稱「氣隙」可與技術上更準確的名稱「氣袋」互換使用，一者均反映各種壓力和元素比。氣袋可為介電材料內位於銅線間的一或更多孔隙。相鄰銅線可由襯層定界，氣隙可從某一銅線上的襯層延伸到相鄰銅線的襯層。相較於典型低K介電材料，氣袋的介電常數約為1，此有利於降低互連電容。

Description

銅線間的氣隙
本發明係關於形成銅線間的氣隙。
自數十年前引用至今，半導體裝置幾何形狀尺寸已大幅縮小。現代半導體製造裝備例行生產幾何形狀小至28奈米(nm)或以下的裝置，並持續開發新裝備設計用於製造幾何形狀更小的裝置。隨著裝置幾何形狀微縮，互連電容對裝置的影響越深。為降低互連電容，習知由氧化矽形成的層間材料已改由低介電常數材料(低k材料)形成。一些已用低k材料包括氟化氧化矽、碳酸化氧化矽和各種聚合物與氣凝膠。儘管這些和其他低k材料已成功用於製造許多不同類型的積體電路，然仍期有新改良製程，以於基板上的相鄰金屬線間形成低介電常數材料區。
銅線因具低電阻率而為所期。使用銅線可減少信號損失，但會提高積體電路操作的最大頻率。信號延遲與銅線電阻乘以銅線間電容呈正比。然由於製程順序整合問題，使用銅內連線已難再降低層間絕緣層的電容。
故需要在積體電路的銅線間形成氣袋(一般稱作氣隙)的方法。
茲描述在圖案化基板上的相鄰銅線間形成「氣隙」的方法。通稱「氣隙」可與技術上更準確的名稱「氣袋」互換使用，二者均反映各種壓力和元素比。氣袋可為介電材料內位於銅線間的一或更多孔隙。相鄰銅線可由襯層定界，氣隙可從某一銅線上的襯層延伸到相鄰銅線的襯層。相較於典型低k介電材料，氣袋的介電常數約為1，此有利於降低互連電容。
本發明的實施例包括形成銅線間的氣隙的方法。方法包括將圖案化基板傳送到基板處理區。圖案化基板包括由一層含矽介電質隔開的二銅線。二銅線將各自露出一部分。方法進一步包括使含氟前驅物流入遠端電漿區，噴淋頭隔開遠端電漿區與基板處理區，同時在遠端電漿區形成遠端電漿，以形成電漿流出物。方法進一步包括使電漿流出物流入基板處理區，以蝕刻二銅線間的含矽介電質。方法進一步包括在二銅線上形成非共形氧化矽層。形成於各銅線上的氧化矽生長並接合在一起，致使氣隙陷於二銅線間。
本發明的實施例包括形成銅線間的氣隙的方法。方法包括將圖案化基板傳送到第一基板處理系統。圖案化基板包括由一層氮化矽與上層氧化矽隔開的二銅線。二銅線將各自露出一部分。方法進一步包括使NF3(三氟化氮)和NH3(氨)流入第一遠端電漿區，噴淋頭隔開第一遠端電漿區與第一基板處理區，同時在第一遠端電漿區形成第一電漿，以形成第一電漿流出物。方法進一步包括使第一電漿流出物流 入第一基板處理區，以蝕刻二銅線間的上層氧化矽。方法進一步包括使NF3和N2O(一氧化二氮)流入第二遠端電漿區，噴淋頭隔開第二遠端電漿區與第二基板處理區，同時在第二遠端電漿區形成第二電漿，以製造第二電漿流出物。方法進一步包括使第二電漿流出物流入第二基板處理區，以蝕刻二銅線間的氮化矽層。方法進一步包括在二銅線上形成非共形氧化矽層。形成於各銅線上的氧化矽生長並接合在一起，致使氣隙陷於二銅線間。
以下敘述將提出部分附加實施例和特徵，且熟諳此技術者在檢閱說明書或實行實施例後，在某種程度上將變得更清楚易懂。利用說明書所述工具、組合和方法，將能理解及達到本發明的特徵和優點。
100‧‧‧氣隙製程
110、120、130、140‧‧‧操作
205‧‧‧鎢
210‧‧‧介電質
215‧‧‧氮化矽
220‧‧‧氧化矽
225‧‧‧襯層
230‧‧‧銅線
1001‧‧‧處理腔室
1010‧‧‧RPS
1011‧‧‧氣體入口組件
1012、1013‧‧‧通道
1020‧‧‧腔室電漿區
1021‧‧‧蓋子
1024‧‧‧絕緣環
1026‧‧‧長度
1050‧‧‧最小直徑
1051‧‧‧中空容積
1053‧‧‧噴淋頭
1055‧‧‧小孔
1056‧‧‧貫穿孔
1070‧‧‧基板處理區
1101‧‧‧系統
1102‧‧‧FOUP
1104、1110‧‧‧機械手臂
1106‧‧‧支托區
1108a-f‧‧‧處理腔室
1115‧‧‧氣體處理系統
1157‧‧‧系統控制器
藉由參照說明書其餘部分和圖式，可進一步了解實施例的本質和優點。
第1圖係根據實施例的氣隙製程流程圖。
第2A圖係根據實施例，在氣隙製程期間，圖案化基板的截面圖。
第2B圖係根據實施例，在氣隙製程期間，圖案化基板的截面圖。
第2C圖係根據實施例，在氣隙製程期間，圖案化基板的截面圖。
第2D圖係根據實施例，在氣隙製程期間，圖案化基板的截面圖。
第3A圖圖示根據實施例的基板處理腔室。
第3B圖圖示根據實施例，基板處理腔室的噴淋頭。
第4圖圖示根據實施例的基板處理系統。
附圖以相同的元件符號代表相似的部件及/或特徵結構。另外，各種同型部件可用元件符號接上破折號與區分類似部件的第二符號區別。若說明書只提及第一元件符號，則不論第二元件符號為何，此敘述可應用到具有相同第一元件符號的任一類似部件。
茲描述在圖案化基板上的相鄰銅線間形成「氣隙」的方法。通稱「氣隙」可與技術上更準確的名稱「氣袋」互換使用，二者均反映各種壓力和元素比。氣袋可為介電材料內位於銅線間的一或更多孔隙。相鄰銅線可由襯層定界，氣隙可從某一銅線上的襯層延伸到相鄰銅線的襯層。相較於典型低k介電材料，氣袋的介電常數約為1，此有利於降低互連電容。
一形成銅線的方式涉及沉積銅至圖案化介電層中的溝槽與間隙內，例如氧化矽。此技術因類似古代裝飾製程而稱作銅鑲嵌。化學機械研磨用於移除圖案化介電層上的銅。接著蝕去圖案化介電材料，以於銅線間形成氣隙。至此，在蝕去圖案化介電材料前，銅必定要「封蓋」，以免銅遭剝蝕。
本發明涉及蝕刻製程，此製程不會剝蝕銅線，故不需封蓋製程。利用所述方法製造的銅線具有低電阻、低RC延遲，且能使完成裝置達到快速交換速度。蝕刻銅線間氧化矽 及/或氮化矽的方法包括遠端電漿和與露出銅相容的特定前驅物種類。電漿流出物與圖案化異質結構反應，以選擇性移除氧化矽及/或氮化矽。因此根據本發明，露出的矽也耐得住。
為更加理解及領會本發明，現將參照第1圖，此圖係根據實施例，氣隙製程100的流程圖。同時，亦參照第2A圖至第2D圖，該等圖式係在氣隙製程期間，圖案化基板的截面圖。在第一操作前，結構形成在圖案化基板中。結構包括下層圖案化介電質210和鎢205(例如鎢栓)。結構進一步包括上面圖案化氮化矽215、圖案化氧化矽220、鈦襯層225形成於上和銅線230形成於鈦襯層225上。結構經研磨或以其他方式處理而露出部分圖案化氧化矽220、鈦襯層225和銅線230。接著在操作110中，將圖案化基板傳送到基板處理系統。
使三氟化氮和氨流入與基板處理區隔開的電漿區，基板處理區容納圖案化基板(操作120)。分隔電漿區在此稱作遠端電漿區，且可為不同於處理腔室的模組或基板處理腔室內由噴淋頭隔開基板處理區的隔室。在操作120中，遠端電漿流出物(即遠端電漿產物)流過噴淋頭而至基板處理區及與圖案化基板表面相互作用，以移除圖案化氧化矽220。視圖案化基板的溫度而定，固體副產物可或可不形成在任何殘留的圖案化氧化矽220上。若形成固體副產物，則可藉由加熱圖案化基板達高於昇華溫度以移除之(未圖示於氣隙製程100)。可重複反應-昇華製程，直到移除圖案化氧化矽220而露出圖案化氮化矽215為止。
現將描述選擇性固體副產物的預估本質。並簡述會 產生及不會產生固體殘留物的基板溫度。產生固體副產物將消耗頂層氧化矽，固體副產物具有出自電漿流出物的材料和出自氧化矽的材料。產自三氟化氮和氨的電漿流出物包括各種分子、分子片段和離子物種。形成固體副產物目前接受的理論機制可能或可能不完全正確，但電漿流出物據悉包括NH4F與NH4F.HF，此快速與低溫圖案化氧化矽220反應。在實施例中，電漿流出物與圖案化氧化矽220反應形成(NH4)2SiF6、NH3與H2O產物。NH3與H2O在所述處理條件下為蒸汽，且可由真空泵自基板處理區移除。(NH4)2SiF6固體副產物層留在圖案化基板表面的氧化矽部分。矽(Si)源自露出氧化矽，氮、氫和氟組成其餘(NH4)2SiF6且源自電漿流出物。可使不同比率的三氟化氮與氨流入遠端電漿區，然根據實施例，氨與三氟化氮的比率採用1：1至4：1或約2：1。
三氟化氮和氨為含氟前驅物和含氫前驅物的特例。大致來說，含氟前驅物流入遠端電漿區，含氟前驅物包括一或更多原子氟、雙原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氫、六氟化硫和二氟化氙。甚至含碳前驅物也可加入已列群組，例如四氟化碳、三氟甲烷、二氟甲烷、氟甲烷和其他碳氟化合物。同樣地，操作120期間流入的含氫前驅物包括一或更多原子氫、分子氫、氨、全烴和不完全鹵素取代烴。
根據實施例，在操作120與130之間，將圖案化基板在基板處理腔室間傳送或留在同一基板處理腔室。移除圖案化氧化矽220和圖案化氮化矽215均可在取自Applied Materials的FrontierTM處理腔室中進行，如此不需傳送。在 稍後敘述中，併入離子抑制元件，以抑制FrontierTM處理腔室中的基板處理區的離子濃度。操作130受惠於使用離子抑制元件。然圖案化氧化矽220可由FrontierTM或SiconiTM處理腔室移除(亦取自Applied Materials)。操作電漿頻率低很多的SiconiTM腔室無離子抑制元件且具整合昇華能力。倘若提供基板連續惰性環境，亦可在個別基板處理系統間傳送圖案化基板(傳送時無需空斷)。露出的銅若接觸含氧大氣則將遭到剝蝕。
在操作130中，移除氮化矽。將三氟化氮和一氧化二氮(N2O)流引入遠端電漿區。根據實施例，在此階段，很少或沒有氫共同引入遠端電漿區。此第二含氟前驅物可不與氫源混合，在實施例中，第二電漿流出物實質無氫。少量氨或氫(例如H：F原子流比率小於1：5或1：10)不會剝蝕銅線230的露出部分。其他氟源可用於加強或取代三氟化氮。通常，第二含氟前驅物流入電漿區，第二含氟前驅物包含選自由原子氟、雙原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氫、六氟化硫、二氟化氙、四氟化碳、三氟甲烷、二氟甲烷、氟甲烷和氟化烴所組成群組的至少一前驅物。接著使在遠端電漿區形成的電漿流出物流入基板處理區(亦為操作130)，及自圖案化基板選擇性蝕刻圖案化氮化矽215。
接著在操作140中，利用具很高黏附係數與低流動性的製程，沉積非共形氧化矽層至二銅線230上。示例性製程係典型具高沉積速度的電漿加強化學氣相沉積(PECVD)氧化矽沉積製程。依此沉積的非共形氧化矽生長並接合在一 起，致使氣隙(氣袋)陷於二銅線間。
在實施例中，操作120期間的圖案化基板溫度可低於60℃、50℃、40℃或35℃。在操作130之前，藉由昇華移除第一乾蝕刻階段形成的固體副產物。根據實施例，昇華期間，固體副產物和圖案化基板的溫度可上升至高於90℃、100℃、120℃或140℃。操作120期間的溫度亦可維持在高位準，促使固體殘留副產物同時昇華或起初不形成固體殘留副產物。因此，根據實施例，昇華期間，操作120期間的圖案化基板溫度可低於160℃、低於140℃、低於120℃或低於100℃。描述示例性裝備時將提供附加圖案化基板溫度。
操作130期間，含氮與氧前驅物用於代替示例性一氧化二氮(N2O)。更大體而言，含氮與氧前驅物流入遠端電漿系統，含氮與氧前驅物可包含選自由N2O、NO、N2O2、NO2所組成群組的至少一前驅物。根據實施例，含氮與氧前驅物亦可為氮源(例如N2)與氧源(O2)的組合物。在實施例中，含氮與氧前驅物可由氮和氧組成。含氮與氧前驅物可實質由或由氮和氧組成。一些含氮與氧前驅物極具陰電性，且有益高電漿功率形成氧化電漿流出物。如此產生的氧化電漿流出物流入另一遠端電漿(亦用於激發含氟前驅物)前，可以補充電漿激發一氧化二氮。補充遠端電漿係在遠端電漿區上游，因為流出物通常從補充遠端電漿流到遠端電漿區，而非反向。根據實施例，含氮與氧前驅物和含氟前驅物可以不同遠端電漿激發及先在基板處理區結合。
操作120期間，含氟前驅物及/或含氫前驅物可進一 步包括一或更多較惰性氣體，例如He、N2、Ar或另一惰性氣體。氬可加至電漿，使電漿早先形成。氦可加入以改善電漿和後續製程的均勻度。在一實施例中，含氟氣體包括流率約5sccm(標準立方公分每分鐘)至300sccm的NF3、流率約10sccm至600sccm的NH3、流率約0sccm至5slm(標準公升每分鐘)的He和流率約0sccm至5slm的Ar。操作130期間，含氟前驅物及/或含氮與氧前驅物可進一步包括一或更多較惰性氣體，例如He、N2、Ar或另一惰性氣體。氬可加至電漿，使電漿早先形成。氦可加入以改善電漿和後續製程的均勻度。在一實施例中，含氟氣體包括流率約5sccm(標準立方公分每分鐘)至300sccm的NF3、流率約250sccm至5slm(標準公升每分鐘)的N2O、流率約0sccm至5slm的He和流率約0sccm至5slm的Ar。根據實施例，操作130期間，很少或實質無NH3(或其他含氫前驅物)流入。在實施例中，操作130期間，第二遠端電漿區和第二基板處理區可無氫。描述示例性裝備時將提供附加流率實施例。一般技術人士將理解可視若干因子，包括處理腔室構造、基板尺寸、幾何形狀和待蝕刻特徵結構佈局，使用其他氣體及/或流量。
N2O(或另一含氮與氧前驅物)流入遠端電漿系統，接著流入遠端電漿區，造成氧化電漿流出物(含有氮-氧-自由基)流入基板處理區。電漿流出物在此將用於涵蓋含氟電漿流出物和氧化電漿流出物。氧化電漿流出物包括氮-氧-自由基。氮-氧-自由基據悉含有一氧化氮(NO)，NO反應性太強，以致無法直接輸送到基板處理區。氮-氧-自由基含有包含氮與 氧化物的自由基，在實施例中係由氮與氧化物組成。氮-氧-自由基係電漿流出物的組分，在操作130中，電漿流出物流入基板處理區。電漿流出物亦包含氟自由基，氟自由基由流入遠端電漿區的含氟前驅物形成。氮-氧-自由基流入基板處理區能令氟自由基移除氮化矽，同時限制與露出銅的反應速度。氮-氧-自由基流入基板處理區對銅露出區的影響很小，氟自由基實質上無法蝕刻銅。
操作120期間，方法包括施加能量至遠端電漿區中的含氟前驅物和含氫前驅物，以產生電漿流出物。操作130期間，方法包括施加能量至遠端電漿區中的含氟前驅物和含氮與氧前驅物，以產生電漿流出物。一般技術人士將理解任一階段的電漿可包括一些帶電和中性物種，包括自由基和離子。操作120和操作130可在同一基板處理腔室或不同處理腔室中進行。因此，操作120時的遠端電漿區通常稱作第一遠端電漿區，操作130時的遠端電漿區稱作第二遠端電漿區。可利用已知技術產生電漿(例如RF、電容耦合、誘導耦合)。在一實施例中，利用電容耦合電漿單元，以約5瓦至300瓦的源功率和約0.2托耳至30托耳的壓力施加能量至第一遠端電漿區。利用電容耦合電漿單元，以約50瓦(W)至1500W的源功率和約0.1托耳至15托耳的壓力施加能量至第二遠端電漿區。電容耦合電漿單元可設置遠離處理腔室的氣體反應區。例如，電容耦合電漿單元和電漿產生區可由噴淋頭及/或離子抑制器隔開氣體反應區。
更大體而言，根據實施例，操作120期間，第一遠 端電漿區和第一基板處理區內的壓力可為小於或約50托耳、小於或約30托耳、小於或約20托耳、小於或約10托耳或小於或約5托耳。在實施例中，操作120期間，第一電漿區和第一基板處理區內的壓力可為大於或約0.1托耳、大於或約0.2托耳、大於或約0.5托耳或大於或約1托耳。任何溫度或壓力上限可結合下限而構成附加實施例。由於依賴前驅物組合物以形成產生固體副產物的前驅物，操作120期間的壓力可大於操作130。根據實施例，操作130期間，第二遠端電漿區和第二基板處理區內的壓力可為小於或約20托耳、小於或約15托耳、小於或約10托耳、小於或約6托耳或小於或約3托耳。在實施例中，操作130期間，第二電漿區和第二基板處理區內的壓力可為大於或約0.05托耳、大於或約0.1托耳、大於或約0.2托耳或大於或約0.5托耳。
在氣隙製程100中，氧化矽係在操作120移除，氮化矽係在操作130移除，二者介於相鄰銅線230之間。在實施例中，僅氧化矽或氮化矽存於相鄰銅線230間。故在一些情況下，只需操作120或操作130。「含矽介電質」一詞將用於涵蓋只有操作120、只有操作130或兼具操作120與130的氣隙製程。在實施例中，含矽介電質為氮氧化矽。
第2A圖至第2D圖的示例性銅線具有鈦襯層包括在內，以在某種程度上防止銅擴散到底下敏感的電子部件。通常，襯層可為各種材料，包括鈦、氮化鈦、組和氮化組。在實施例中，所述氣隙製程形成的氣隙可一路延伸到界定二相鄰銅線邊界的襯層。
在實施例中，在示例性裝備章節描述的離子抑制器可用於提供自由基及/或中性物種來選擇性蝕刻氮化矽。離子抑制器亦可稱作離子抑制元件。例如在實施例中，離子抑制器用於過濾蝕刻電漿流出物(包括氟自由基)，以選擇性蝕刻氮化矽。離子抑制器可包括在所述各示例性製程內。使用電漿流出物，可使氧化矽具有相對矽與氧化矽的蝕刻速度選擇性。
離子抑制器可用於提供自由基濃度比離子高的反應氣體。離子抑制器用於大幅減少或實質消除離子帶電物種從電漿產生區行進到基板。在離子抑制器另一側的遠端電漿區的電漿激發期間，利用朗繆爾探針測量基板處理區的電子溫度。在實施例中，電子溫度可低於0.5電子伏特(eV)、低於0.45eV、低於0.4eV或低於0.35eV。存有噴淋頭及/或在基板處理區與遠端電漿區間設置離子抑制器可達成該等示例性低電子溫度值。不帶電中性和自由基物種可通過離子抑制器的開口而與基板反應。因離子抑制器過濾或移除大部分的電漿帶電粒子，故在操作130期間不需偏壓基板。相較於習知包括濺射及轟擊的電漿蝕刻製程，使用自由基和其他中性物種的製程可減少電漿損傷。離子抑制器有助於將反應區的離子物種濃度控制在輔助製程的位準。本發明的實施例亦優於習知濕蝕刻製程，其中液體表面張力將造成小特徵結構彎曲及剝落。
描述示例性處理腔室和系統時將揭示附加製程參數。
示例性處理裝備
第3A圖係根據實施例的基板處理腔室1001。遠端電漿系統1010可處理含氟前驅物，含氟前驅物接著行經氣體入口組件1011。氣體入口組件1011內有兩個不同的氣體供應通道。第一通道1012引導前驅物僅只通過遠端電漿系統(RPS)1010，第二通道1013則引導前驅物繞過遠端電漿系統1010。第一通道1012引導含氮與氧前驅物，第二通道1013引導含氟前驅物。
蓋子(或導電頂部)1021和穿孔隔板1053間圖示有絕緣環1024，以允許相對穿孔隔板1053施加AC電位至蓋子1021。AC電位觸發腔室電漿區1020的電漿。氮-氧-自由基(即電漿激發的含氮與氧前驅物)行經第一通道1012而進入腔室電漿區1020，並由腔室電漿區1020的電漿進一步激發。含氟前驅物流經第二通道1013，且只由腔室電漿區1020激發、而非RPS 1010。穿孔隔板(亦稱作噴淋頭)1053隔開腔室電漿區1020和噴淋頭1053下方的基板處理區1070。噴淋頭1053容許電漿存於腔室電漿區1020，以免直接激發基板處理區1070的氣體，同時仍可讓激發物種從腔室電漿區1020進入基板處理區1070。
噴淋頭1053設在腔室電漿區1020與基板處理區1070之間，及容許遠端電漿系統1010及/或腔室電漿區1020產生的電漿流出物(前驅物或其他氣體的激發衍生物)通過複數個貫穿孔1056，貫穿孔1056橫跨板材厚度。噴淋頭1053亦具有一或更多中空容積1051，在實施例中，中空容積1051 充滿蒸汽或氣體形式的前驅物(例如RPS 1010激發的氧化電漿流出物)，並且通過小孔1055而至基板處理區1070，但不直接進入腔室電漿區1020。小孔1055可描述成盲孔，以運輸不直接流體耦接至腔室電漿區1020者，例如貫穿孔1056。在此揭示實施例中，噴淋頭1053比貫穿孔1056的最小直徑1050的長度厚。為維持有效的激發物種濃度從腔室電漿區1020穿透基板處理區1070，可形成貫穿孔1056的較大直徑部分通過噴淋頭1053，以限制貫穿孔最小直徑1050的長度1026。在實施例中，貫穿孔1056的最小直徑1050的長度可和貫穿孔1056的最小直徑一樣量級或以下。
噴淋頭1053可配置以用作第3A圖所示離子抑制器。或者，可包括個別處理腔室元件(未圖示)，以抑制進入基板處理區1070的離子濃度。蓋子1021和噴淋頭1053分別可當作第一電極和第二電極，如此蓋子1021和噴淋頭1053可接收不同電壓。在該等構造中，電功率(例如RF功率)可施加至蓋子1021、噴淋頭1053或二者。例如，電功率可施加至蓋子1021，噴淋頭1053(做為離子抑制器)則接地。基板處理系統可包括RF產生器，用以提供電功率至蓋子及/或噴淋頭1053。施加電壓至蓋子1021可促進腔室電漿區1020內的電漿均勻分佈(即減少局部電漿)。為能在腔室電漿區1020形成電漿，絕緣環1024可電氣隔絕蓋子1021與噴淋頭1053。絕緣環1024可由陶瓷製成，且具高崩潰電壓以免發火花。電容耦合電漿部件附近的部分基板處理腔室1001可進一步包括冷卻單元(未圖示)，冷卻單元包括一或更多冷卻流道，以用 循環冷卻劑(例如水)冷卻接觸電漿的表面。
在所示實施例中，噴淋頭1053可分配(經由貫穿孔1056)含有氧、氟及/或氮的製程氣體及/或製程氣體經腔室電漿區1020的電漿激發後產生的電漿流出物。根據實施例，引入遠端電漿系統1010及/或腔室電漿區1020的製程氣體可含氟(例如F2、NF3或XeF2)。製程氣體亦可包括載氣，例如氦、氬、氮(N2)等。電漿流出物可包括製程氣體的離子或中性衍生物，且在此亦可稱作氟自由基，此與引入製程氣體的原子成分有關。
貫穿孔1056配置以抑制離子帶電物種遷移出腔室電漿區1020，同時容許不帶電中性或自由基物種通過噴淋頭1053而至基板處理區1070。該等不帶電物種可包括高反應性物種，此伴隨低反應性載氣經由貫穿孔1056輸送。如上所述，此可減少離子物種經由貫穿孔1056遷移，且在一些情況下可完全抑制或實質消除。控制通過噴淋頭1053的離子物種量可加強控制混合氣體接觸下方晶圓基板，進而加強控制混合氣體的沉積及/或蝕刻特性。例如，調整混合氣體的離子濃度可有效改變蝕刻選擇性(例如氮化矽：矽蝕刻比)。
根據實施例，貫穿孔1056的數量可為約60至約2000個。貫穿孔1056可具各種形狀，但最易製作成圓形。在實施例中，貫穿孔1056的最小直徑1050可為約0.5毫米(mm)至約20mm或約1mm至約6mm。在選擇貫穿孔截面形狀方面也很有彈性，貫穿孔截面可製作成圓錐形、圓柱形或兩種形狀組合。在實施例中，用於將未激發前驅物引入基板處理 區1070的小孔1055的數量可為約100至約5000個或約500至約2000個。小孔1055的直徑可為約0.1mm至約2mm。
貫穿孔1056可配置以控制電漿活化氣體(即離子、自由基及/或中性物種)通過噴淋頭1053。例如，可控制孔深寬比(即孔徑對長度)及/或孔幾何形狀，以減少活化氣體中的離子帶電物種流過噴淋頭1053。噴淋頭1053的貫穿孔1056可包括面向腔室電漿區1020的錐部和面向基板處理區1070的圓柱部。圓柱部可按比例及尺寸製作成得以控制離子物種流入基板處理區1070。調整式電偏壓亦可施加至噴淋頭1053，做為控制離子物種流過噴淋頭1053的附加手段。
或者，貫穿孔1056可具小內徑(ID)朝向噴淋頭1053的頂表面和大ID朝向底表面。貫穿孔1056可具大內徑朝向噴淋頭1053的頂表面和小內徑朝向噴淋頭的底表面。此外，貫穿孔1056的下緣可去角，以助於當電漿流出物離開噴淋頭時，使基板處理區1070的電漿流出物均勻分佈，及促進電漿流出物和前驅氣體均勻分佈。小ID可沿著貫穿孔1056設在不同位置且仍容許噴淋頭1053降低基板處理區1070內的離子密度。離子密度降低起因於在進入基板處理區1070前碰撞牆面的次數增加。每次碰撞會從牆面獲得或損失電子，以致提高離子中和的可能性。大致來說，貫穿孔1056的小ID可為約0.2mm至約20mm。根據實施例，小ID可為約1mm至6mm或約0.2mm至約5mm。另外，貫穿孔1056的深寬比(即小ID對孔長)可為約1比20。貫穿孔的小ID可為沿著貫穿孔長度的最小ID。貫穿孔1056的截面通常呈圓柱形、 圓錐形或兩種形狀任意組合。
第3B圖係根據實施例，偕同處理腔室使用的噴淋頭1053的底視圖。噴淋頭1053對應第3A圖所示噴淋頭。貫穿孔1056繪示成在噴淋頭1053的底部有大內徑(ID)，頂部則有小ID。在實施例中，小孔1055實質均勻分佈於噴淋頭表面、甚至在貫穿孔1056之間，此有助於更均勻混合。
當含氟電漿流出物和含氧電漿流出物經由噴淋頭1053的貫穿孔1056抵達時，示例性圖案化基板可由基板處理區1070的基座(未圖示)支撐。雖然基板處理區1070可裝配以支援電漿用於其他製程，例如固化，但在實施例中，蝕刻圖案化基板時可不存有電漿。
電漿可在噴淋頭1053上方的腔室電漿區1020或噴淋頭1053下方的基板處理區1070點燃。電漿存於腔室電漿區1020，以自含氟前驅物流入物產生氟自由基。AC電壓通常處於射頻(RF)範圍及施加至處理腔室的導電頂部(蓋子1021)與噴淋頭1053之間，以於沉積期間點燃腔室電漿區1020的電漿。RF電源產生13.56兆赫(MHz)的RF高頻，但也可單獨產生其他頻率或結合13.56MHz的頻率。
當開啟基板處理區1070的底部電漿以固化膜或清洗界定基板處理區1070的內面時，頂部電漿可保持為低或無功率。藉由施加AC電壓至噴淋頭1053與基座或腔室底部之間，可點燃基板處理區1070的電漿。存有電漿時，清洗氣體可引入基板處理區1070。
基座可具有熱交換通道，熱交換流體流經熱交換通 道，以控制基板溫度。此構造能冷卻或加熱基板溫度，以維持較低溫度(-20℃至約120℃)。熱交換流體可包含乙二醇和水。亦可利用埋置單迴路加熱元件，電阻加熱基座的晶圓支撐盤(較佳為鋁、陶瓷或上述物質組合物)達較高溫度(約120℃至約1100℃)，加熱元件依平行同心圓形式配置成完整兩圈。加熱元件的外部可鄰接支撐盤周圍運作，內部則在半徑較小的同心圓路徑運作。加熱元件的接線通過基座主幹。
腔室電漿區或遠端電漿系統區域可稱作遠端電漿區。在實施例中，自由基前驅物(例如氟自由基和氮-氧-自由基)在遠端電漿區形成及進入基板處理區，其中組合物優先蝕刻氮化矽。在實施例中，電漿功率本質上可只施加至遠端電漿區，以確保氟自由基和氮-氧-自由基(一同稱作電漿流出物)不會在基板處理區遭進一步激發。
在採用腔室電漿區的實施例中，激發電漿流出物係在隔開沉積區的基板處理區段中產生(若為氮-氧-自由基，則為進一步激發)。沉積區(在此亦稱作基板處理區)為電漿流出物混合及反應蝕刻圖案化基板(半導體晶圓)處。激發電漿流出物亦可伴隨惰性氣體(例如氦)。在蝕刻處理圖案化基板時(操作120和130)，基板處理區在此可描述成「無電漿」。「無電漿」不必然指稱該區缺乏電漿。較低濃度的離子物種和電漿區內產生的自由電子確實會因貫穿孔1056的形狀和尺寸而通過隔室(噴淋頭/離子抑制器)中的孔隙(縫隙)。在一些實施例中，基板處理區內本質上無離子物種和自由電子濃度。腔室電漿區的電漿邊界很難界定，且可能經由噴淋頭的 縫隙超出基板處理區。至於誘導耦合電漿，則可直接在基板處理區內少量離子化。另外，可在基板處理區產生低強度電漿，又不會消除成膜特徵結構。形成激發電漿流出物時造成電漿離子密度遠比腔室電漿區(或遠端電漿區)低的所有原因並未脫離本文所述「無電漿」的範圍。
在實施例中，操作120或130期間，三氟化氮(或另一含氟前驅物)流入腔室電漿區1020的流率可為約5sccm至約500sccm、約10sccm至約300sccm、約25sccm至約200sccm、約50sccm至約150sccm或約75sccm至約125sccm。在實施例中，操作120期間，氨(或另一含氫前驅物)流入腔室電漿區1020的流率可為約10sccm至約1000sccm、約20sccm至約600sccm、約50sccm至約400sccm、約100sccm至約300sccm或約150sccm至約250sccm。在實施例中，操作130期間，一氧化二氮(或另一含氮與氧前驅物)流入遠端電漿區1010、接著流入腔室電漿區1020(串聯)的流率可為大於或約250sccm、大於或約500sccm、大於或約1slm、大於或約2slm或大於或約5slm。
含氟前驅物和含氮與氧前驅物進入腔室的結合流率可佔整體混合氣體體積的0.05%至約20%；其餘為載氣。根據實施例，含氟前驅物和含氮與氧前驅物流入遠端電漿區，但電漿流出物具有相同的體積流量比率。若係含氟前驅物，則淨化或載氣比含氟氣體早進入遠端電漿區，以穩定遠端電漿區內的壓力。
施加至第一遠端電漿區和第二遠端電漿區的電漿功 率可為各種頻率或多頻組合，且二遠端電漿可不同。在示例性處理系統中，第二遠端電漿由在蓋子1021與噴淋頭1053間輸送的RF功率提供。在實施例中，施加至第一遠端電漿區(在此實例為RPS 1010)的RF功率可為約250瓦至約15000瓦、約500瓦至約5000瓦或約1000瓦至約2000瓦。根據實施例，施加至第二遠端電漿區(在此實例為腔室電漿區1020)的RF功率可為約10瓦至約1500瓦、約20瓦至約1000瓦、約50瓦至約500瓦或約100瓦至約200瓦。根據實施例，在示例性處理系統中施加的RF頻率可為小於約200千赫的低RF頻率、約10兆赫至約15兆赫的高RF頻率、或大於或約1秭赫的微波頻率。操作130可使用高頻移除氮化矽，操作120可使用低頻移除氧化矽。
操作120及/或130期間，基板溫度可為約-30℃至約150℃。茲發現在此低溫範圍的蝕刻速度較高。在實施例中，所述蝕刻製程期間的基板溫度為約-20℃或以上、0℃或以上、約5℃或以上或約10℃或以上。在實施例中，基板溫度可為低於或約150℃、低於或約100℃、低於或約50℃、低於或約30℃、低於或約20℃、低於或約15℃或低於或約10℃。任何溫度或壓力上限可結合下限而構成附加實施例。
使載氣和電漿流出物流入基板處理區1070時，基板處理區1070、遠端電漿系統1010或腔室電漿區1020可維持在各種壓力。基板處理區內的壓力可為小於或約50托耳、小於或約30托耳、小於或約20托耳、小於或約10托耳或小於或約5托耳。在實施例中，壓力可為大於或約0.01托耳、大 於或約0.1托耳、大於或約0.2托耳、大於或約0.5托耳或大於或約1托耳。壓力下限可結合壓力上限而構成附加實施例。資料顯示蝕刻速度增加係製程壓力和相關負載效應提高的函數，此可能或非特定製程流程所期望或容忍。
在實施例中，基板處理腔室1001可整合到各種多重處理平台，包括取自位於美國加州聖克拉拉的Applied Materials公司的ProducerTM GT、CenturaTM AP和EnduraTM平台。此類處理平台能在不破真空的情況下進行數個處理操作。施行所述方法的處理腔室可包括介電質蝕刻腔室或各種化學氣相沉積腔室和其他類型的腔室。
處理腔室可併入大型製造系統，以製造積體電路晶片。第4圖圖示根據實施例，沉積、烘烤及固化腔室的系統1101。圖中，一對FOUP(前開式晶圓傳送盒)1102供應基板(例如直徑300mm的晶圓)，在放入晶圓處理腔室1108a-f前，基板由機械手臂1104接收及放到低壓支托區1106。第二機械手臂1110用於將基板晶圓從低壓支托區1106傳送到晶圓處理腔室1108a-f及返回。各晶圓處理腔室1108a-f可裝備以進行一些基板處理操作，除了循環層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預清洗、除氣、定向和其他襯底處理，還包括所述乾蝕刻製程。
晶圓處理腔室1108a-f可包括一或更多系統部件，用以沉積、退火、固化及/或蝕刻基板晶圓上的介電膜。在一構造中，兩對處理腔室(例如1108c-d和1108e-f)用於沉積介 電材料至基板上，第三對處理腔室(例如1108a-b)用於蝕刻沉積介電質。在另一構造中，三對腔室(例如1108a-f)皆配置以蝕刻基板上的介電膜。在實施例中，所述任一或更多製程可在獨立於所示製造系統的腔室中進行。
基板處理系統受控於系統控制器。在示例性實施例中，系統控制器包括硬碟機、軟碟機和處理器。處理器含有單板電腦(SBC)、類比與數位輸入/輸出板、介面板和步進馬達控制板。CVD系統的各種零件皆符合規範板、卡籠和連接器尺寸與類型的Versa Modular European(VME)標準。VME標準尚訂定具16位元資料匯流排與24位元位址匯流排的匯流排結構。
系統控制器1157用於控制馬達、閥、流量控制器、電源和進行所述製程配方所需的其他功能。氣體處理系統1155亦可由系統控制器1157控制，以將氣體引入一或所有的晶圓處理腔室1108a-f。系統控制器1157可依光學感測器的反饋決定及調整氣體處理系統1155及/或晶圓處理腔室1108a-f中的移動式機械組件位置。機械組件可包括機器人、節流閥和晶座，機械組件在系統控制器1157的控制下由馬達移動。
在示例性實施例中，系統控制器1157包括硬碟機(記憶體)、USB埠、軟碟機和處理器。系統控制器1157包括類比與數位輸入/輸出板、介面板和步進馬達控制板。含有基板處理腔室1001的多腔室處理系統1101的各種零件受控於系統控制器1157。系統控制器執行電腦程式形式的系統控 制軟體，電腦程式儲存於電腦可讀取媒體，例如硬碟、軟碟或快閃記憶體隨身碟。亦可使用其他類型的記憶體。電腦程式包括指令集，用以指定特定製程的時序、混合氣體、腔室壓力、腔室溫度、RF功率位準、晶座位置和其他參數。
可利用控制器執行的電腦程式產品，施行蝕刻、沉積或以其他方式處理基板上的膜的製程或清洗腔室的製程。電腦程式碼可以任何傳統電腦可讀取程式語言編寫，例如68000組合語言、C、C++、Pascal、Fortran或其他語言。適當的程式碼乃利用傳統文字編輯器輸入單一檔案或多個檔案，並儲存或收錄在電腦可用媒體中，例如電腦的記憶系統。若輸入碼文字為高階語言，則進行編碼，產生的編譯程序碼接著連結預先編譯之Microsoft Windows®書庫例行程序的目的碼。為執行連結的編譯目的碼，系統使用者訴諸目的碼，使電腦系統載入記憶體中的編碼。CPU接著讀取及執行編碼，以進行程式識別的任務。
使用者與控制器間的介面可透過平面觸摸式螢幕，還可包括滑鼠和鍵盤。在一實施例中，採用兩個螢幕，其一裝設於潔淨室牆壁供操作員使用，另一放置於牆壁後方供維修技師使用。兩個螢幕同時顯示相同資訊，但一次只有一個螢幕接受輸入。為選擇特定畫面或功能，操作員用手指或滑鼠觸碰顯示螢幕的指定區域。觸碰區域改變醒目顏色或顯示新選單或畫面讓操作員確定選擇。
在此所用「基板」一詞可為具有或不具層形成於上的支撐基板。圖案化基板可為絕緣體或具各種摻雜濃度與輪 廓的半導體，例如用於製造積體電路的半導體基板類型。圖案化基板露出的「矽」主要為Si，但可包括微量濃度的其他元素成分，例如氮、氧、氫和碳。圖案化基板露出的「氮化矽」主要為Si3N4，但可包括微量濃度的其他元素成分，例如氧、氫和碳。圖案化基板露出的「氧化矽」主要為SiO2，但可包括微量濃度的其他元素成分，例如氮、氫和碳。在一些實施例中，所述氧化矽膜實質由矽和氧組成。
「前驅物」一詞用於指稱參予反應以自表面移除材料或沉積材料至表面上的任何製程氣體。「電漿流出物」描述離開腔室電漿區及進入基板處理區的氣體。電漿流出物處於「激發態」，其中至少一些氣體分子處於振動激發、游離及/或離子化狀態。「自由基前驅物」用於描述電漿流出物(處於激發態的氣體，該氣體正退出電漿)，電漿流出物參予反應以自表面移除材料或沉積材料至表面上。「氟自由基」(或「氧自由基」或「氮-氧-自由基」)係含氟(或氧或氮&氧)的自由基前驅物，但可含有其他元素成分。「惰性氣體」一詞係指在蝕刻製程期間或之後不會在膜內形成化學鍵的任何氣體。示例性惰性氣體包括稀有氣體，但也可包括其他氣體，只要微量(通常)陷入膜時不會形成化學鍵即可。
通篇所用「間隙」和「溝槽」一詞並非暗示蝕刻幾何形狀具有大橫向深寬比。從表面上方觀看，溝槽可呈圓形、橢圓形、多邊形、矩形或各種其他形狀。溝槽可為圍繞島狀材料的壕溝形狀。「通孔」一詞係指低深寬比溝槽(從上方觀看)，通孔可以或可不填滿金屬而構成縱向電連接。在此， 共形蝕刻製程係指大致均勻移除表面上和表面形狀一樣的材料，即蝕刻層表面和預蝕刻表面大致平行。一般技術人士將理解蝕刻界面可能無法100%共形，故以「大致」一詞表達可接受容限。
根據上述數個實施例，熟諳此技術者將理解使用各種修改、替代構造和均等物皆不脫離所述實施例的精神。此外，一些熟知的製程和元件並未提及，以免不必要地讓本發明變得晦澀難懂。因此，以上說明不應視為限定本發明的範圍。
應理解提供數值範圍時，除非內文特別指明，否則亦明確揭示介於此範圍上限與下限的中間值到下限單位的十分之一。介於論述範圍內任何論述值或中間值與該論述範圍內任何其他論述值或中間值間的較小範圍亦包含在內。較小範圍的上限與下限可各自涵蓋在此範圍內或排除在外，且取決於論述範圍中特別排除的限制，本發明亦包含每一種包括較小範圍之上限及/或下限的範圍。當論述範圍包括限值之一或二者時，排除該等限值的範圍亦包括在內。
除非內文清楚指明，否則本文和後附申請專利範圍使用的單數形式「一」和「該」包括複數意涵。例如，指稱「一製程」包括複數個此類製程，指稱「該介電材料」包括指稱一或更多介電材料和熟諳此技術者已知的均等物等。
又，本說明書和以下申請專利範圍使用的「包含」與「包括」等用語擬明定存有所述特徵、整體、部件或步驟，但並不排除存有或另設一或更多其他特徵、整體、部件、步 驟、動作或群組。

Claims (12)

  1. 一種形成銅線間的氣隙的方法，該方法包含下列操作：將一圖案化基板傳送到一基板處理區，其中該圖案化基板包含二銅線，該二銅線由一層含矽介電質隔開，其中該二銅線各自將露出一部分；使一含氟前驅物流入一遠端電漿區，一噴淋頭隔開該遠端電漿區與該基板處理區，同時在該遠端電漿區形成一遠端電漿，以形成一電漿流出物；使該電漿流出物流入該基板處理區，以蝕刻該二銅線間的該含矽介電質；及在該二銅線上形成一非共形氧化矽層，其中形成於各銅線上的氧化矽生長並接合在一起，致使一氣隙陷於該二銅線間，其中使該含氟前驅物流入該遠端電漿區的操作進一步包含使一含氮與氧前驅物流入該遠端電漿區，以及其中該含氮與氧前驅物包含N2O、NO、NO2或N2O2之一。
  2. 如請求項1所述之方法，其中該含氟前驅物包含選自由三氟化氮、氟化氫、原子氟、雙原子氟、四氟化碳和二氟化氙所組成群組的一前驅物。
  3. 如請求項1所述之方法，其中使該含氟前驅物流入該遠端電漿區的操作進一步包含使一含氫前驅物流入該遠端電漿區。
  4. 如請求項3所述之方法，其中該含氫前驅物包含原子氫、分子氫、氨、全烴和一不完全鹵素取代烴之一。
  5. 如請求項1所述之方法，其中該含矽介電質係氧化矽。
  6. 如請求項1所述之方法，其中該含氮與氧前驅物係由氮與氧組成。
  7. 如請求項1所述之方法，其中該含矽介電質係氮化矽。
  8. 如請求項1所述之方法，其中該遠端電漿係一電容耦合電漿。
  9. 如請求項1所述之方法，其中該二銅線由一襯層定界，該氣隙延伸到接壤各銅線的該襯層。
  10. 一種形成銅線間的氣隙的方法，該方法包含下列操作：將一圖案化基板傳送到一第一基板處理區，其中該圖案化基板包含二銅線，該二銅線由一層氮化矽與在該層氮化矽頂部的一層氧化矽隔開，其中該二銅線各自將露出一部分；使NF3和NH3流入一第一遠端電漿區，一噴淋頭隔開該第一遠端電漿區與該第一基板處理區，同時在該第一遠端電漿區形成一第一電漿，以形成一第一電漿流出物； 使該第一電漿流出物流入該第一基板處理區，以蝕刻該二銅線間的該上層氧化矽；使NF3和N2O流入一第二遠端電漿區，一噴淋頭隔開該第二遠端電漿區與一第二基板處理區，同時在該第二遠端電漿區形成一第二電漿，以製造一第二電漿流出物；使該第二電漿流出物流入該第二基板處理區，以蝕刻該二銅線間的該層氮化矽；及在該二銅線上形成一非共形氧化矽層，其中形成於各銅線上的氧化矽生長並接合在一起，致使一氣隙陷於該二銅線間。
  11. 如請求項10所述之方法，其中該第一遠端電漿區係該第二遠端電漿區，該第一基板處理區係該第二基板處理區。
  12. 如請求項10所述之方法，其中該第一基板處理區和該第二基板處理區位於不同的基板處理腔室，在流入該第一電漿流出物與流入該第二電漿流出物的操作間，該圖案化基板從該第一基板處理區傳送到該第二基板處理區。
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