TWI625824B - 銅線間的氣隙 - Google Patents

銅線間的氣隙 Download PDF

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TWI625824B
TWI625824B TW103146115A TW103146115A TWI625824B TW I625824 B TWI625824 B TW I625824B TW 103146115 A TW103146115 A TW 103146115A TW 103146115 A TW103146115 A TW 103146115A TW I625824 B TWI625824 B TW I625824B
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substrate processing
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copper wires
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普羅亞思維諾德Ｒ
英格爾尼汀Ｋ
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應用材料股份有限公司
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Abstract

茲描述在圖案化基板上的相鄰銅線間形成「氣隙」的方法。通稱「氣隙」可與技術上更準確的名稱「氣袋」互換使用，一者均反映各種壓力和元素比。氣袋可為介電材料內位於銅線間的一或更多孔隙。相鄰銅線可由襯層定界，氣隙可從某一銅線上的襯層延伸到相鄰銅線的襯層。相較於典型低K介電材料，氣袋的介電常數約為1，此有利於降低互連電容。

Description

銅線間的氣隙
本發明係關於形成銅線間的氣隙。
自數十年前引用至今，半導體裝置幾何形狀尺寸已大幅縮小。現代半導體製造裝備例行生產幾何形狀小至28奈米(nm)或以下的裝置，並持續開發新裝備設計用於製造幾何形狀更小的裝置。隨著裝置幾何形狀微縮，互連電容對裝置的影響越深。為降低互連電容，習知由氧化矽形成的層間材料已改由低介電常數材料(低k材料)形成。一些已用低k材料包括氟化氧化矽、碳酸化氧化矽和各種聚合物與氣凝膠。儘管這些和其他低k材料已成功用於製造許多不同類型的積體電路，然仍期有新改良製程，以於基板上的相鄰金屬線間形成低介電常數材料區。
銅線因具低電阻率而為所期。使用銅線可減少信號損失，但會提高積體電路操作的最大頻率。信號延遲與銅線電阻乘以銅線間電容呈正比。然由於製程順序整合問題，使用銅內連線已難再降低層間絕緣層的電容。
故需要在積體電路的銅線間形成氣袋(一般稱作氣隙)的方法。
茲描述在圖案化基板上的相鄰銅線間形成「氣隙」的方法。通稱「氣隙」可與技術上更準確的名稱「氣袋」互換使用，二者均反映各種壓力和元素比。氣袋可為介電材料內位於銅線間的一或更多孔隙。相鄰銅線可由襯層定界，氣隙可從某一銅線上的襯層延伸到相鄰銅線的襯層。相較於典型低k介電材料，氣袋的介電常數約為1，此有利於降低互連電容。
本發明的實施例包括形成銅線間的氣隙的方法。方法包括將圖案化基板傳送到基板處理區。圖案化基板包括由一層含矽介電質隔開的二銅線。二銅線將各自露出一部分。方法進一步包括使含氟前驅物流入遠端電漿區，噴淋頭隔開遠端電漿區與基板處理區，同時在遠端電漿區形成遠端電漿，以形成電漿流出物。方法進一步包括使電漿流出物流入基板處理區，以蝕刻二銅線間的含矽介電質。方法進一步包括在二銅線上形成非共形氧化矽層。形成於各銅線上的氧化矽生長並接合在一起，致使氣隙陷於二銅線間。
本發明的實施例包括形成銅線間的氣隙的方法。方法包括將圖案化基板傳送到第一基板處理系統。圖案化基板包括由一層氮化矽與上層氧化矽隔開的二銅線。二銅線將各自露出一部分。方法進一步包括使NF3(三氟化氮)和NH3(氨)流入第一遠端電漿區，噴淋頭隔開第一遠端電漿區與第一基板處理區，同時在第一遠端電漿區形成第一電漿，以形成第一電漿流出物。方法進一步包括使第一電漿流出物流 入第一基板處理區，以蝕刻二銅線間的上層氧化矽。方法進一步包括使NF3和N2O(一氧化二氮)流入第二遠端電漿區，噴淋頭隔開第二遠端電漿區與第二基板處理區，同時在第二遠端電漿區形成第二電漿，以製造第二電漿流出物。方法進一步包括使第二電漿流出物流入第二基板處理區，以蝕刻二銅線間的氮化矽層。方法進一步包括在二銅線上形成非共形氧化矽層。形成於各銅線上的氧化矽生長並接合在一起，致使氣隙陷於二銅線間。
以下敘述將提出部分附加實施例和特徵，且熟諳此技術者在檢閱說明書或實行實施例後，在某種程度上將變得更清楚易懂。利用說明書所述工具、組合和方法，將能理解及達到本發明的特徵和優點。
100‧‧‧氣隙製程
110、120、130、140‧‧‧操作
205‧‧‧鎢
210‧‧‧介電質
215‧‧‧氮化矽
220‧‧‧氧化矽
225‧‧‧襯層
230‧‧‧銅線
1001‧‧‧處理腔室
1010‧‧‧RPS
1011‧‧‧氣體入口組件
1012、1013‧‧‧通道
1020‧‧‧腔室電漿區
1021‧‧‧蓋子
1024‧‧‧絕緣環
1026‧‧‧長度
1050‧‧‧最小直徑
1051‧‧‧中空容積
1053‧‧‧噴淋頭
1055‧‧‧小孔
1056‧‧‧貫穿孔
1070‧‧‧基板處理區
1101‧‧‧系統
1102‧‧‧FOUP
1104、1110‧‧‧機械手臂
1106‧‧‧支托區
1108a-f‧‧‧處理腔室
1115‧‧‧氣體處理系統
1157‧‧‧系統控制器
藉由參照說明書其餘部分和圖式，可進一步了解實施例的本質和優點。
第1圖係根據實施例的氣隙製程流程圖。
第2A圖係根據實施例，在氣隙製程期間，圖案化基板的截面圖。
第2B圖係根據實施例，在氣隙製程期間，圖案化基板的截面圖。
第2C圖係根據實施例，在氣隙製程期間，圖案化基板的截面圖。
第2D圖係根據實施例，在氣隙製程期間，圖案化基板的截面圖。
第3A圖圖示根據實施例的基板處理腔室。
第3B圖圖示根據實施例，基板處理腔室的噴淋頭。
第4圖圖示根據實施例的基板處理系統。
附圖以相同的元件符號代表相似的部件及/或特徵結構。另外，各種同型部件可用元件符號接上破折號與區分類似部件的第二符號區別。若說明書只提及第一元件符號，則不論第二元件符號為何，此敘述可應用到具有相同第一元件符號的任一類似部件。
茲描述在圖案化基板上的相鄰銅線間形成「氣隙」的方法。通稱「氣隙」可與技術上更準確的名稱「氣袋」互換使用，二者均反映各種壓力和元素比。氣袋可為介電材料內位於銅線間的一或更多孔隙。相鄰銅線可由襯層定界，氣隙可從某一銅線上的襯層延伸到相鄰銅線的襯層。相較於典型低k介電材料，氣袋的介電常數約為1，此有利於降低互連電容。
一形成銅線的方式涉及沉積銅至圖案化介電層中的溝槽與間隙內，例如氧化矽。此技術因類似古代裝飾製程而稱作銅鑲嵌。化學機械研磨用於移除圖案化介電層上的銅。接著蝕去圖案化介電材料，以於銅線間形成氣隙。至此，在蝕去圖案化介電材料前，銅必定要「封蓋」，以免銅遭剝蝕。
本發明涉及蝕刻製程，此製程不會剝蝕銅線，故不需封蓋製程。利用所述方法製造的銅線具有低電阻、低RC延遲，且能使完成裝置達到快速交換速度。蝕刻銅線間氧化矽 及/或氮化矽的方法包括遠端電漿和與露出銅相容的特定前驅物種類。電漿流出物與圖案化異質結構反應，以選擇性移除氧化矽及/或氮化矽。因此根據本發明，露出的矽也耐得住。
為更加理解及領會本發明，現將參照第1圖，此圖係根據實施例，氣隙製程100的流程圖。同時，亦參照第2A圖至第2D圖，該等圖式係在氣隙製程期間，圖案化基板的截面圖。在第一操作前，結構形成在圖案化基板中。結構包括下層圖案化介電質210和鎢205(例如鎢栓)。結構進一步包括上面圖案化氮化矽215、圖案化氧化矽220、鈦襯層225形成於上和銅線230形成於鈦襯層225上。結構經研磨或以其他方式處理而露出部分圖案化氧化矽220、鈦襯層225和銅線230。接著在操作110中，將圖案化基板傳送到基板處理系統。
使三氟化氮和氨流入與基板處理區隔開的電漿區，基板處理區容納圖案化基板(操作120)。分隔電漿區在此稱作遠端電漿區，且可為不同於處理腔室的模組或基板處理腔室內由噴淋頭隔開基板處理區的隔室。在操作120中，遠端電漿流出物(即遠端電漿產物)流過噴淋頭而至基板處理區及與圖案化基板表面相互作用，以移除圖案化氧化矽220。視圖案化基板的溫度而定，固體副產物可或可不形成在任何殘留的圖案化氧化矽220上。若形成固體副產物，則可藉由加熱圖案化基板達高於昇華溫度以移除之(未圖示於氣隙製程100)。可重複反應-昇華製程，直到移除圖案化氧化矽220而露出圖案化氮化矽215為止。
現將描述選擇性固體副產物的預估本質。並簡述會 產生及不會產生固體殘留物的基板溫度。產生固體副產物將消耗頂層氧化矽，固體副產物具有出自電漿流出物的材料和出自氧化矽的材料。產自三氟化氮和氨的電漿流出物包括各種分子、分子片段和離子物種。形成固體副產物目前接受的理論機制可能或可能不完全正確，但電漿流出物據悉包括NH4F與NH4F.HF，此快速與低溫圖案化氧化矽220反應。在實施例中，電漿流出物與圖案化氧化矽220反應形成(NH4)2SiF6、NH3與H2O產物。NH3與H2O在所述處理條件下為蒸汽，且可由真空泵自基板處理區移除。(NH4)2SiF6固體副產物層留在圖案化基板表面的氧化矽部分。矽(Si)源自露出氧化矽，氮、氫和氟組成其餘(NH4)2SiF6且源自電漿流出物。可使不同比率的三氟化氮與氨流入遠端電漿區，然根據實施例，氨與三氟化氮的比率採用1：1至4：1或約2：1。
三氟化氮和氨為含氟前驅物和含氫前驅物的特例。大致來說，含氟前驅物流入遠端電漿區，含氟前驅物包括一或更多原子氟、雙原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氫、六氟化硫和二氟化氙。甚至含碳前驅物也可加入已列群組，例如四氟化碳、三氟甲烷、二氟甲烷、氟甲烷和其他碳氟化合物。同樣地，操作120期間流入的含氫前驅物包括一或更多原子氫、分子氫、氨、全烴和不完全鹵素取代烴。
根據實施例，在操作120與130之間，將圖案化基板在基板處理腔室間傳送或留在同一基板處理腔室。移除圖案化氧化矽220和圖案化氮化矽215均可在取自Applied Materials的FrontierTM處理腔室中進行，如此不需傳送。在 稍後敘述中，併入離子抑制元件，以抑制FrontierTM處理腔室中的基板處理區的離子濃度。操作130受惠於使用離子抑制元件。然圖案化氧化矽220可由FrontierTM或SiconiTM處理腔室移除(亦取自Applied Materials)。操作電漿頻率低很多的SiconiTM腔室無離子抑制元件且具整合昇華能力。倘若提供基板連續惰性環境，亦可在個別基板處理系統間傳送圖案化基板(傳送時無需空斷)。露出的銅若接觸含氧大氣則將遭到剝蝕。
在操作130中，移除氮化矽。將三氟化氮和一氧化二氮(N2O)流引入遠端電漿區。根據實施例，在此階段，很少或沒有氫共同引入遠端電漿區。此第二含氟前驅物可不與氫源混合，在實施例中，第二電漿流出物實質無氫。少量氨或氫(例如H：F原子流比率小於1：5或1：10)不會剝蝕銅線230的露出部分。其他氟源可用於加強或取代三氟化氮。通常，第二含氟前驅物流入電漿區，第二含氟前驅物包含選自由原子氟、雙原子氟、三氟化溴、三氟化氯、三氟化氮、氟化氫、六氟化硫、二氟化氙、四氟化碳、三氟甲烷、二氟甲烷、氟甲烷和氟化烴所組成群組的至少一前驅物。接著使在遠端電漿區形成的電漿流出物流入基板處理區(亦為操作130)，及自圖案化基板選擇性蝕刻圖案化氮化矽215。
接著在操作140中，利用具很高黏附係數與低流動性的製程，沉積非共形氧化矽層至二銅線230上。示例性製程係典型具高沉積速度的電漿加強化學氣相沉積(PECVD)氧化矽沉積製程。依此沉積的非共形氧化矽生長並接合在一 起，致使氣隙(氣袋)陷於二銅線間。
在實施例中，操作120期間的圖案化基板溫度可低於60℃、50℃、40℃或35℃。在操作130之前，藉由昇華移除第一乾蝕刻階段形成的固體副產物。根據實施例，昇華期間，固體副產物和圖案化基板的溫度可上升至高於90℃、100℃、120℃或140℃。操作120期間的溫度亦可維持在高位準，促使固體殘留副產物同時昇華或起初不形成固體殘留副產物。因此，根據實施例，昇華期間，操作120期間的圖案化基板溫度可低於160℃、低於140℃、低於120℃或低於100℃。描述示例性裝備時將提供附加圖案化基板溫度。
操作130期間，含氮與氧前驅物用於代替示例性一氧化二氮(N2O)。更大體而言，含氮與氧前驅物流入遠端電漿系統，含氮與氧前驅物可包含選自由N2O、NO、N2O2、NO2所組成群組的至少一前驅物。根據實施例，含氮與氧前驅物亦可為氮源(例如N2)與氧源(O2)的組合物。在實施例中，含氮與氧前驅物可由氮和氧組成。含氮與氧前驅物可實質由或由氮和氧組成。一些含氮與氧前驅物極具陰電性，且有益高電漿功率形成氧化電漿流出物。如此產生的氧化電漿流出物流入另一遠端電漿(亦用於激發含氟前驅物)前，可以補充電漿激發一氧化二氮。補充遠端電漿係在遠端電漿區上游，因為流出物通常從補充遠端電漿流到遠端電漿區，而非反向。根據實施例，含氮與氧前驅物和含氟前驅物可以不同遠端電漿激發及先在基板處理區結合。
操作120期間，含氟前驅物及/或含氫前驅物可進一 步包括一或更多較惰性氣體，例如He、N2、Ar或另一惰性氣體。氬可加至電漿，使電漿早先形成。氦可加入以改善電漿和後續製程的均勻度。在一實施例中，含氟氣體包括流率約5sccm(標準立方公分每分鐘)至300sccm的NF3、流率約10sccm至600sccm的NH3、流率約0sccm至5slm(標準公升每分鐘)的He和流率約0sccm至5slm的Ar。操作130期間，含氟前驅物及/或含氮與氧前驅物可進一步包括一或更多較惰性氣體，例如He、N2、Ar或另一惰性氣體。氬可加至電漿，使電漿早先形成。氦可加入以改善電漿和後續製程的均勻度。在一實施例中，含氟氣體包括流率約5sccm(標準立方公分每分鐘)至300sccm的NF3、流率約250sccm至5slm(標準公升每分鐘)的N2O、流率約0sccm至5slm的He和流率約0sccm至5slm的Ar。根據實施例，操作130期間，很少或實質無NH3(或其他含氫前驅物)流入。在實施例中，操作130期間，第二遠端電漿區和第二基板處理區可無氫。描述示例性裝備時將提供附加流率實施例。一般技術人士將理解可視若干因子，包括處理腔室構造、基板尺寸、幾何形狀和待蝕刻特徵結構佈局，使用其他氣體及/或流量。
N2O(或另一含氮與氧前驅物)流入遠端電漿系統，接著流入遠端電漿區，造成氧化電漿流出物(含有氮-氧-自由基)流入基板處理區。電漿流出物在此將用於涵蓋含氟電漿流出物和氧化電漿流出物。氧化電漿流出物包括氮-氧-自由基。氮-氧-自由基據悉含有一氧化氮(NO)，NO反應性太強，以致無法直接輸送到基板處理區。氮-氧-自由基含有包含氮與 氧化物的自由基，在實施例中係由氮與氧化物組成。氮-氧-自由基係電漿流出物的組分，在操作130中，電漿流出物流入基板處理區。電漿流出物亦包含氟自由基，氟自由基由流入遠端電漿區的含氟前驅物形成。氮-氧-自由基流入基板處理區能令氟自由基移除氮化矽，同時限制與露出銅的反應速度。氮-氧-自由基流入基板處理區對銅露出區的影響很小，氟自由基實質上無法蝕刻銅。
操作120期間，方法包括施加能量至遠端電漿區中的含氟前驅物和含氫前驅物，以產生電漿流出物。操作130期間，方法包括施加能量至遠端電漿區中的含氟前驅物和含氮與氧前驅物，以產生電漿流出物。一般技術人士將理解任一階段的電漿可包括一些帶電和中性物種，包括自由基和離子。操作120和操作130可在同一基板處理腔室或不同處理腔室中進行。因此，操作120時的遠端電漿區通常稱作第一遠端電漿區，操作130時的遠端電漿區稱作第二遠端電漿區。可利用已知技術產生電漿(例如RF、電容耦合、誘導耦合)。在一實施例中，利用電容耦合電漿單元，以約5瓦至300瓦的源功率和約0.2托耳至30托耳的壓力施加能量至第一遠端電漿區。利用電容耦合電漿單元，以約50瓦(W)至1500W的源功率和約0.1托耳至15托耳的壓力施加能量至第二遠端電漿區。電容耦合電漿單元可設置遠離處理腔室的氣體反應區。例如，電容耦合電漿單元和電漿產生區可由噴淋頭及/或離子抑制器隔開氣體反應區。
更大體而言，根據實施例，操作120期間，第一遠 端電漿區和第一基板處理區內的壓力可為小於或約50托耳、小於或約30托耳、小於或約20托耳、小於或約10托耳或小於或約5托耳。在實施例中，操作120期間，第一電漿區和第一基板處理區內的壓力可為大於或約0.1托耳、大於或約0.2托耳、大於或約0.5托耳或大於或約1托耳。任何溫度或壓力上限可結合下限而構成附加實施例。由於依賴前驅物組合物以形成產生固體副產物的前驅物，操作120期間的壓力可大於操作130。根據實施例，操作130期間，第二遠端電漿區和第二基板處理區內的壓力可為小於或約20托耳、小於或約15托耳、小於或約10托耳、小於或約6托耳或小於或約3托耳。在實施例中，操作130期間，第二電漿區和第二基板處理區內的壓力可為大於或約0.05托耳、大於或約0.1托耳、大於或約0.2托耳或大於或約0.5托耳。
在氣隙製程100中，氧化矽係在操作120移除，氮化矽係在操作130移除，二者介於相鄰銅線230之間。在實施例中，僅氧化矽或氮化矽存於相鄰銅線230間。故在一些情況下，只需操作120或操作130。「含矽介電質」一詞將用於涵蓋只有操作120、只有操作130或兼具操作120與130的氣隙製程。在實施例中，含矽介電質為氮氧化矽。
第2A圖至第2D圖的示例性銅線具有鈦襯層包括在內，以在某種程度上防止銅擴散到底下敏感的電子部件。通常，襯層可為各種材料，包括鈦、氮化鈦、組和氮化組。在實施例中，所述氣隙製程形成的氣隙可一路延伸到界定二相鄰銅線邊界的襯層。
在實施例中，在示例性裝備章節描述的離子抑制器可用於提供自由基及/或中性物種來選擇性蝕刻氮化矽。離子抑制器亦可稱作離子抑制元件。例如在實施例中，離子抑制器用於過濾蝕刻電漿流出物(包括氟自由基)，以選擇性蝕刻氮化矽。離子抑制器可包括在所述各示例性製程內。使用電漿流出物，可使氧化矽具有相對矽與氧化矽的蝕刻速度選擇性。
離子抑制器可用於提供自由基濃度比離子高的反應氣體。離子抑制器用於大幅減少或實質消除離子帶電物種從電漿產生區行進到基板。在離子抑制器另一側的遠端電漿區的電漿激發期間，利用朗繆爾探針測量基板處理區的電子溫度。在實施例中，電子溫度可低於0.5電子伏特(eV)、低於0.45eV、低於0.4eV或低於0.35eV。存有噴淋頭及/或在基板處理區與遠端電漿區間設置離子抑制器可達成該等示例性低電子溫度值。不帶電中性和自由基物種可通過離子抑制器的開口而與基板反應。因離子抑制器過濾或移除大部分的電漿帶電粒子，故在操作130期間不需偏壓基板。相較於習知包括濺射及轟擊的電漿蝕刻製程，使用自由基和其他中性物種的製程可減少電漿損傷。離子抑制器有助於將反應區的離子物種濃度控制在輔助製程的位準。本發明的實施例亦優於習知濕蝕刻製程，其中液體表面張力將造成小特徵結構彎曲及剝落。
描述示例性處理腔室和系統時將揭示附加製程參數。
示例性處理裝備
第3A圖係根據實施例的基板處理腔室1001。遠端電漿系統1010可處理含氟前驅物，含氟前驅物接著行經氣體入口組件1011。氣體入口組件1011內有兩個不同的氣體供應通道。第一通道1012引導前驅物僅只通過遠端電漿系統(RPS)1010，第二通道1013則引導前驅物繞過遠端電漿系統1010。第一通道1012引導含氮與氧前驅物，第二通道1013引導含氟前驅物。
蓋子(或導電頂部)1021和穿孔隔板1053間圖示有絕緣環1024，以允許相對穿孔隔板1053施加AC電位至蓋子1021。AC電位觸發腔室電漿區1020的電漿。氮-氧-自由基(即電漿激發的含氮與氧前驅物)行經第一通道1012而進入腔室電漿區1020，並由腔室電漿區1020的電漿進一步激發。含氟前驅物流經第二通道1013，且只由腔室電漿區1020激發、而非RPS 1010。穿孔隔板(亦稱作噴淋頭)1053隔開腔室電漿區1020和噴淋頭1053下方的基板處理區1070。噴淋頭1053容許電漿存於腔室電漿區1020，以免直接激發基板處理區1070的氣體，同時仍可讓激發物種從腔室電漿區1020進入基板處理區1070。
噴淋頭1053設在腔室電漿區1020與基板處理區1070之間，及容許遠端電漿系統1010及/或腔室電漿區1020產生的電漿流出物(前驅物或其他氣體的激發衍生物)通過複數個貫穿孔1056，貫穿孔1056橫跨板材厚度。噴淋頭1053亦具有一或更多中空容積1051，在實施例中，中空容積1051 充滿蒸汽或氣體形式的前驅物(例如RPS 1010激發的氧化電漿流出物)，並且通過小孔1055而至基板處理區1070，但不直接進入腔室電漿區1020。小孔1055可描述成盲孔，以運輸不直接流體耦接至腔室電漿區1020者，例如貫穿孔1056。在此揭示實施例中，噴淋頭1053比貫穿孔1056的最小直徑1050的長度厚。為維持有效的激發物種濃度從腔室電漿區1020穿透基板處理區1070，可形成貫穿孔1056的較大直徑部分通過噴淋頭1053，以限制貫穿孔最小直徑1050的長度1026。在實施例中，貫穿孔1056的最小直徑1050的長度可和貫穿孔1056的最小直徑一樣量級或以下。
噴淋頭1053可配置以用作第3A圖所示離子抑制器。或者，可包括個別處理腔室元件(未圖示)，以抑制進入基板處理區1070的離子濃度。蓋子1021和噴淋頭1053分別可當作第一電極和第二電極，如此蓋子1021和噴淋頭1053可接收不同電壓。在該等構造中，電功率(例如RF功率)可施加至蓋子1021、噴淋頭1053或二者。例如，電功率可施加至蓋子1021，噴淋頭1053(做為離子抑制器)則接地。基板處理系統可包括RF產生器，用以提供電功率至蓋子及/或噴淋頭1053。施加電壓至蓋子1021可促進腔室電漿區1020內的電漿均勻分佈(即減少局部電漿)。為能在腔室電漿區1020形成電漿，絕緣環1024可電氣隔絕蓋子1021與噴淋頭1053。絕緣環1024可由陶瓷製成，且具高崩潰電壓以免發火花。電容耦合電漿部件附近的部分基板處理腔室1001可進一步包括冷卻單元(未圖示)，冷卻單元包括一或更多冷卻流道，以用 循環冷卻劑(例如水)冷卻接觸電漿的表面。
在所示實施例中，噴淋頭1053可分配(經由貫穿孔1056)含有氧、氟及/或氮的製程氣體及/或製程氣體經腔室電漿區1020的電漿激發後產生的電漿流出物。根據實施例，引入遠端電漿系統1010及/或腔室電漿區1020的製程氣體可含氟(例如F2、NF3或XeF2)。製程氣體亦可包括載氣，例如氦、氬、氮(N2)等。電漿流出物可包括製程氣體的離子或中性衍生物，且在此亦可稱作氟自由基，此與引入製程氣體的原子成分有關。
貫穿孔1056配置以抑制離子帶電物種遷移出腔室電漿區1020，同時容許不帶電中性或自由基物種通過噴淋頭1053而至基板處理區1070。該等不帶電物種可包括高反應性物種，此伴隨低反應性載氣經由貫穿孔1056輸送。如上所述，此可減少離子物種經由貫穿孔1056遷移，且在一些情況下可完全抑制或實質消除。控制通過噴淋頭1053的離子物種量可加強控制混合氣體接觸下方晶圓基板，進而加強控制混合氣體的沉積及/或蝕刻特性。例如，調整混合氣體的離子濃度可有效改變蝕刻選擇性(例如氮化矽：矽蝕刻比)。
根據實施例，貫穿孔1056的數量可為約60至約2000個。貫穿孔1056可具各種形狀，但最易製作成圓形。在實施例中，貫穿孔1056的最小直徑1050可為約0.5毫米(mm)至約20mm或約1mm至約6mm。在選擇貫穿孔截面形狀方面也很有彈性，貫穿孔截面可製作成圓錐形、圓柱形或兩種形狀組合。在實施例中，用於將未激發前驅物引入基板處理 區1070的小孔1055的數量可為約100至約5000個或約500至約2000個。小孔1055的直徑可為約0.1mm至約2mm。
貫穿孔1056可配置以控制電漿活化氣體(即離子、自由基及/或中性物種)通過噴淋頭1053。例如，可控制孔深寬比(即孔徑對長度)及/或孔幾何形狀，以減少活化氣體中的離子帶電物種流過噴淋頭1053。噴淋頭1053的貫穿孔1056可包括面向腔室電漿區1020的錐部和面向基板處理區1070的圓柱部。圓柱部可按比例及尺寸製作成得以控制離子物種流入基板處理區1070。調整式電偏壓亦可施加至噴淋頭1053，做為控制離子物種流過噴淋頭1053的附加手段。
或者，貫穿孔1056可具小內徑(ID)朝向噴淋頭1053的頂表面和大ID朝向底表面。貫穿孔1056可具大內徑朝向噴淋頭1053的頂表面和小內徑朝向噴淋頭的底表面。此外，貫穿孔1056的下緣可去角，以助於當電漿流出物離開噴淋頭時，使基板處理區1070的電漿流出物均勻分佈，及促進電漿流出物和前驅氣體均勻分佈。小ID可沿著貫穿孔1056設在不同位置且仍容許噴淋頭1053降低基板處理區1070內的離子密度。離子密度降低起因於在進入基板處理區1070前碰撞牆面的次數增加。每次碰撞會從牆面獲得或損失電子，以致提高離子中和的可能性。大致來說，貫穿孔1056的小ID可為約0.2mm至約20mm。根據實施例，小ID可為約1mm至6mm或約0.2mm至約5mm。另外，貫穿孔1056的深寬比(即小ID對孔長)可為約1比20。貫穿孔的小ID可為沿著貫穿孔長度的最小ID。貫穿孔1056的截面通常呈圓柱形、 圓錐形或兩種形狀任意組合。
第3B圖係根據實施例，偕同處理腔室使用的噴淋頭1053的底視圖。噴淋頭1053對應第3A圖所示噴淋頭。貫穿孔1056繪示成在噴淋頭1053的底部有大內徑(ID)，頂部則有小ID。在實施例中，小孔1055實質均勻分佈於噴淋頭表面、甚至在貫穿孔1056之間，此有助於更均勻混合。
當含氟電漿流出物和含氧電漿流出物經由噴淋頭1053的貫穿孔1056抵達時，示例性圖案化基板可由基板處理區1070的基座(未圖示)支撐。雖然基板處理區1070可裝配以支援電漿用於其他製程，例如固化，但在實施例中，蝕刻圖案化基板時可不存有電漿。
電漿可在噴淋頭1053上方的腔室電漿區1020或噴淋頭1053下方的基板處理區1070點燃。電漿存於腔室電漿區1020，以自含氟前驅物流入物產生氟自由基。AC電壓通常處於射頻(RF)範圍及施加至處理腔室的導電頂部(蓋子1021)與噴淋頭1053之間，以於沉積期間點燃腔室電漿區1020的電漿。RF電源產生13.56兆赫(MHz)的RF高頻，但也可單獨產生其他頻率或結合13.56MHz的頻率。
當開啟基板處理區1070的底部電漿以固化膜或清洗界定基板處理區1070的內面時，頂部電漿可保持為低或無功率。藉由施加AC電壓至噴淋頭1053與基座或腔室底部之間，可點燃基板處理區1070的電漿。存有電漿時，清洗氣體可引入基板處理區1070。
基座可具有熱交換通道，熱交換流體流經熱交換通 道，以控制基板溫度。此構造能冷卻或加熱基板溫度，以維持較低溫度(-20℃至約120℃)。熱交換流體可包含乙二醇和水。亦可利用埋置單迴路加熱元件，電阻加熱基座的晶圓支撐盤(較佳為鋁、陶瓷或上述物質組合物)達較高溫度(約120℃至約1100℃)，加熱元件依平行同心圓形式配置成完整兩圈。加熱元件的外部可鄰接支撐盤周圍運作，內部則在半徑較小的同心圓路徑運作。加熱元件的接線通過基座主幹。
腔室電漿區或遠端電漿系統區域可稱作遠端電漿區。在實施例中，自由基前驅物(例如氟自由基和氮-氧-自由基)在遠端電漿區形成及進入基板處理區，其中組合物優先蝕刻氮化矽。在實施例中，電漿功率本質上可只施加至遠端電漿區，以確保氟自由基和氮-氧-自由基(一同稱作電漿流出物)不會在基板處理區遭進一步激發。
在採用腔室電漿區的實施例中，激發電漿流出物係在隔開沉積區的基板處理區段中產生(若為氮-氧-自由基，則為進一步激發)。沉積區(在此亦稱作基板處理區)為電漿流出物混合及反應蝕刻圖案化基板(半導體晶圓)處。激發電漿流出物亦可伴隨惰性氣體(例如氦)。在蝕刻處理圖案化基板時(操作120和130)，基板處理區在此可描述成「無電漿」。「無電漿」不必然指稱該區缺乏電漿。較低濃度的離子物種和電漿區內產生的自由電子確實會因貫穿孔1056的形狀和尺寸而通過隔室(噴淋頭/離子抑制器)中的孔隙(縫隙)。在一些實施例中，基板處理區內本質上無離子物種和自由電子濃度。腔室電漿區的電漿邊界很難界定，且可能經由噴淋頭的 縫隙超出基板處理區。至於誘導耦合電漿，則可直接在基板處理區內少量離子化。另外，可在基板處理區產生低強度電漿，又不會消除成膜特徵結構。形成激發電漿流出物時造成電漿離子密度遠比腔室電漿區(或遠端電漿區)低的所有原因並未脫離本文所述「無電漿」的範圍。
在實施例中，操作120或130期間，三氟化氮(或另一含氟前驅物)流入腔室電漿區1020的流率可為約5sccm至約500sccm、約10sccm至約300sccm、約25sccm至約200sccm、約50sccm至約150sccm或約75sccm至約125sccm。在實施例中，操作120期間，氨(或另一含氫前驅物)流入腔室電漿區1020的流率可為約10sccm至約1000sccm、約20sccm至約600sccm、約50sccm至約400sccm、約100sccm至約300sccm或約150sccm至約250sccm。在實施例中，操作130期間，一氧化二氮(或另一含氮與氧前驅物)流入遠端電漿區1010、接著流入腔室電漿區1020(串聯)的流率可為大於或約250sccm、大於或約500sccm、大於或約1slm、大於或約2slm或大於或約5slm。
含氟前驅物和含氮與氧前驅物進入腔室的結合流率可佔整體混合氣體體積的0.05%至約20%；其餘為載氣。根據實施例，含氟前驅物和含氮與氧前驅物流入遠端電漿區，但電漿流出物具有相同的體積流量比率。若係含氟前驅物，則淨化或載氣比含氟氣體早進入遠端電漿區，以穩定遠端電漿區內的壓力。
施加至第一遠端電漿區和第二遠端電漿區的電漿功 率可為各種頻率或多頻組合，且二遠端電漿可不同。在示例性處理系統中，第二遠端電漿由在蓋子1021與噴淋頭1053間輸送的RF功率提供。在實施例中，施加至第一遠端電漿區(在此實例為RPS 1010)的RF功率可為約250瓦至約15000瓦、約500瓦至約5000瓦或約1000瓦至約2000瓦。根據實施例，施加至第二遠端電漿區(在此實例為腔室電漿區1020)的RF功率可為約10瓦至約1500瓦、約20瓦至約1000瓦、約50瓦至約500瓦或約100瓦至約200瓦。根據實施例，在示例性處理系統中施加的RF頻率可為小於約200千赫的低RF頻率、約10兆赫至約15兆赫的高RF頻率、或大於或約1秭赫的微波頻率。操作130可使用高頻移除氮化矽，操作120可使用低頻移除氧化矽。
操作120及/或130期間，基板溫度可為約-30℃至約150℃。茲發現在此低溫範圍的蝕刻速度較高。在實施例中，所述蝕刻製程期間的基板溫度為約-20℃或以上、0℃或以上、約5℃或以上或約10℃或以上。在實施例中，基板溫度可為低於或約150℃、低於或約100℃、低於或約50℃、低於或約30℃、低於或約20℃、低於或約15℃或低於或約10℃。任何溫度或壓力上限可結合下限而構成附加實施例。
使載氣和電漿流出物流入基板處理區1070時，基板處理區1070、遠端電漿系統1010或腔室電漿區1020可維持在各種壓力。基板處理區內的壓力可為小於或約50托耳、小於或約30托耳、小於或約20托耳、小於或約10托耳或小於或約5托耳。在實施例中，壓力可為大於或約0.01托耳、大 於或約0.1托耳、大於或約0.2托耳、大於或約0.5托耳或大於或約1托耳。壓力下限可結合壓力上限而構成附加實施例。資料顯示蝕刻速度增加係製程壓力和相關負載效應提高的函數，此可能或非特定製程流程所期望或容忍。
在實施例中，基板處理腔室1001可整合到各種多重處理平台，包括取自位於美國加州聖克拉拉的Applied Materials公司的ProducerTM GT、CenturaTM AP和EnduraTM平台。此類處理平台能在不破真空的情況下進行數個處理操作。施行所述方法的處理腔室可包括介電質蝕刻腔室或各種化學氣相沉積腔室和其他類型的腔室。
處理腔室可併入大型製造系統，以製造積體電路晶片。第4圖圖示根據實施例，沉積、烘烤及固化腔室的系統1101。圖中，一對FOUP(前開式晶圓傳送盒)1102供應基板(例如直徑300mm的晶圓)，在放入晶圓處理腔室1108a-f前，基板由機械手臂1104接收及放到低壓支托區1106。第二機械手臂1110用於將基板晶圓從低壓支托區1106傳送到晶圓處理腔室1108a-f及返回。各晶圓處理腔室1108a-f可裝備以進行一些基板處理操作，除了循環層沉積(CLD)、原子層沉積(ALD)、化學氣相沉積(CVD)、物理氣相沉積(PVD)、蝕刻、預清洗、除氣、定向和其他襯底處理，還包括所述乾蝕刻製程。
晶圓處理腔室1108a-f可包括一或更多系統部件，用以沉積、退火、固化及/或蝕刻基板晶圓上的介電膜。在一構造中，兩對處理腔室(例如1108c-d和1108e-f)用於沉積介 電材料至基板上，第三對處理腔室(例如1108a-b)用於蝕刻沉積介電質。在另一構造中，三對腔室(例如1108a-f)皆配置以蝕刻基板上的介電膜。在實施例中，所述任一或更多製程可在獨立於所示製造系統的腔室中進行。
基板處理系統受控於系統控制器。在示例性實施例中，系統控制器包括硬碟機、軟碟機和處理器。處理器含有單板電腦(SBC)、類比與數位輸入/輸出板、介面板和步進馬達控制板。CVD系統的各種零件皆符合規範板、卡籠和連接器尺寸與類型的Versa Modular European(VME)標準。VME標準尚訂定具16位元資料匯流排與24位元位址匯流排的匯流排結構。
系統控制器1157用於控制馬達、閥、流量控制器、電源和進行所述製程配方所需的其他功能。氣體處理系統1155亦可由系統控制器1157控制，以將氣體引入一或所有的晶圓處理腔室1108a-f。系統控制器1157可依光學感測器的反饋決定及調整氣體處理系統1155及/或晶圓處理腔室1108a-f中的移動式機械組件位置。機械組件可包括機器人、節流閥和晶座，機械組件在系統控制器1157的控制下由馬達移動。
在示例性實施例中，系統控制器1157包括硬碟機(記憶體)、USB埠、軟碟機和處理器。系統控制器1157包括類比與數位輸入/輸出板、介面板和步進馬達控制板。含有基板處理腔室1001的多腔室處理系統1101的各種零件受控於系統控制器1157。系統控制器執行電腦程式形式的系統控 制軟體，電腦程式儲存於電腦可讀取媒體，例如硬碟、軟碟或快閃記憶體隨身碟。亦可使用其他類型的記憶體。電腦程式包括指令集，用以指定特定製程的時序、混合氣體、腔室壓力、腔室溫度、RF功率位準、晶座位置和其他參數。
可利用控制器執行的電腦程式產品，施行蝕刻、沉積或以其他方式處理基板上的膜的製程或清洗腔室的製程。電腦程式碼可以任何傳統電腦可讀取程式語言編寫，例如68000組合語言、C、C++、Pascal、Fortran或其他語言。適當的程式碼乃利用傳統文字編輯器輸入單一檔案或多個檔案，並儲存或收錄在電腦可用媒體中，例如電腦的記憶系統。若輸入碼文字為高階語言，則進行編碼，產生的編譯程序碼接著連結預先編譯之Microsoft Windows®書庫例行程序的目的碼。為執行連結的編譯目的碼，系統使用者訴諸目的碼，使電腦系統載入記憶體中的編碼。CPU接著讀取及執行編碼，以進行程式識別的任務。
使用者與控制器間的介面可透過平面觸摸式螢幕，還可包括滑鼠和鍵盤。在一實施例中，採用兩個螢幕，其一裝設於潔淨室牆壁供操作員使用，另一放置於牆壁後方供維修技師使用。兩個螢幕同時顯示相同資訊，但一次只有一個螢幕接受輸入。為選擇特定畫面或功能，操作員用手指或滑鼠觸碰顯示螢幕的指定區域。觸碰區域改變醒目顏色或顯示新選單或畫面讓操作員確定選擇。
在此所用「基板」一詞可為具有或不具層形成於上的支撐基板。圖案化基板可為絕緣體或具各種摻雜濃度與輪 廓的半導體，例如用於製造積體電路的半導體基板類型。圖案化基板露出的「矽」主要為Si，但可包括微量濃度的其他元素成分，例如氮、氧、氫和碳。圖案化基板露出的「氮化矽」主要為Si3N4，但可包括微量濃度的其他元素成分，例如氧、氫和碳。圖案化基板露出的「氧化矽」主要為SiO2，但可包括微量濃度的其他元素成分，例如氮、氫和碳。在一些實施例中，所述氧化矽膜實質由矽和氧組成。
「前驅物」一詞用於指稱參予反應以自表面移除材料或沉積材料至表面上的任何製程氣體。「電漿流出物」描述離開腔室電漿區及進入基板處理區的氣體。電漿流出物處於「激發態」，其中至少一些氣體分子處於振動激發、游離及/或離子化狀態。「自由基前驅物」用於描述電漿流出物(處於激發態的氣體，該氣體正退出電漿)，電漿流出物參予反應以自表面移除材料或沉積材料至表面上。「氟自由基」(或「氧自由基」或「氮-氧-自由基」)係含氟(或氧或氮&氧)的自由基前驅物，但可含有其他元素成分。「惰性氣體」一詞係指在蝕刻製程期間或之後不會在膜內形成化學鍵的任何氣體。示例性惰性氣體包括稀有氣體，但也可包括其他氣體，只要微量(通常)陷入膜時不會形成化學鍵即可。
通篇所用「間隙」和「溝槽」一詞並非暗示蝕刻幾何形狀具有大橫向深寬比。從表面上方觀看，溝槽可呈圓形、橢圓形、多邊形、矩形或各種其他形狀。溝槽可為圍繞島狀材料的壕溝形狀。「通孔」一詞係指低深寬比溝槽(從上方觀看)，通孔可以或可不填滿金屬而構成縱向電連接。在此， 共形蝕刻製程係指大致均勻移除表面上和表面形狀一樣的材料，即蝕刻層表面和預蝕刻表面大致平行。一般技術人士將理解蝕刻界面可能無法100%共形，故以「大致」一詞表達可接受容限。
根據上述數個實施例，熟諳此技術者將理解使用各種修改、替代構造和均等物皆不脫離所述實施例的精神。此外，一些熟知的製程和元件並未提及，以免不必要地讓本發明變得晦澀難懂。因此，以上說明不應視為限定本發明的範圍。
應理解提供數值範圍時，除非內文特別指明，否則亦明確揭示介於此範圍上限與下限的中間值到下限單位的十分之一。介於論述範圍內任何論述值或中間值與該論述範圍內任何其他論述值或中間值間的較小範圍亦包含在內。較小範圍的上限與下限可各自涵蓋在此範圍內或排除在外，且取決於論述範圍中特別排除的限制，本發明亦包含每一種包括較小範圍之上限及/或下限的範圍。當論述範圍包括限值之一或二者時，排除該等限值的範圍亦包括在內。
除非內文清楚指明，否則本文和後附申請專利範圍使用的單數形式「一」和「該」包括複數意涵。例如，指稱「一製程」包括複數個此類製程，指稱「該介電材料」包括指稱一或更多介電材料和熟諳此技術者已知的均等物等。
又，本說明書和以下申請專利範圍使用的「包含」與「包括」等用語擬明定存有所述特徵、整體、部件或步驟，但並不排除存有或另設一或更多其他特徵、整體、部件、步 驟、動作或群組。

Claims (12)

  1. 一種形成銅線間的氣隙的方法，該方法包含下列操作：將一圖案化基板傳送到一基板處理區，其中該圖案化基板包含二銅線，該二銅線由一層含矽介電質隔開，其中該二銅線各自將露出一部分；使一含氟前驅物流入一遠端電漿區，一噴淋頭隔開該遠端電漿區與該基板處理區，同時在該遠端電漿區形成一遠端電漿，以形成一電漿流出物；使該電漿流出物流入該基板處理區，以蝕刻該二銅線間的該含矽介電質；及在該二銅線上形成一非共形氧化矽層，其中形成於各銅線上的氧化矽生長並接合在一起，致使一氣隙陷於該二銅線間，其中使該含氟前驅物流入該遠端電漿區的操作進一步包含使一含氮與氧前驅物流入該遠端電漿區，以及其中該含氮與氧前驅物包含N2O、NO、NO2或N2O2之一。
  2. 如請求項1所述之方法，其中該含氟前驅物包含選自由三氟化氮、氟化氫、原子氟、雙原子氟、四氟化碳和二氟化氙所組成群組的一前驅物。
  3. 如請求項1所述之方法，其中使該含氟前驅物流入該遠端電漿區的操作進一步包含使一含氫前驅物流入該遠端電漿區。
  4. 如請求項3所述之方法，其中該含氫前驅物包含原子氫、分子氫、氨、全烴和一不完全鹵素取代烴之一。
  5. 如請求項1所述之方法，其中該含矽介電質係氧化矽。
  6. 如請求項1所述之方法，其中該含氮與氧前驅物係由氮與氧組成。
  7. 如請求項1所述之方法，其中該含矽介電質係氮化矽。
  8. 如請求項1所述之方法，其中該遠端電漿係一電容耦合電漿。
  9. 如請求項1所述之方法，其中該二銅線由一襯層定界，該氣隙延伸到接壤各銅線的該襯層。
  10. 一種形成銅線間的氣隙的方法，該方法包含下列操作：將一圖案化基板傳送到一第一基板處理區，其中該圖案化基板包含二銅線，該二銅線由一層氮化矽與在該層氮化矽頂部的一層氧化矽隔開，其中該二銅線各自將露出一部分；使NF3和NH3流入一第一遠端電漿區，一噴淋頭隔開該第一遠端電漿區與該第一基板處理區，同時在該第一遠端電漿區形成一第一電漿，以形成一第一電漿流出物； 使該第一電漿流出物流入該第一基板處理區，以蝕刻該二銅線間的該上層氧化矽；使NF3和N2O流入一第二遠端電漿區，一噴淋頭隔開該第二遠端電漿區與一第二基板處理區，同時在該第二遠端電漿區形成一第二電漿，以製造一第二電漿流出物；使該第二電漿流出物流入該第二基板處理區，以蝕刻該二銅線間的該層氮化矽；及在該二銅線上形成一非共形氧化矽層，其中形成於各銅線上的氧化矽生長並接合在一起，致使一氣隙陷於該二銅線間。
  11. 如請求項10所述之方法，其中該第一遠端電漿區係該第二遠端電漿區，該第一基板處理區係該第二基板處理區。
  12. 如請求項10所述之方法，其中該第一基板處理區和該第二基板處理區位於不同的基板處理腔室，在流入該第一電漿流出物與流入該第二電漿流出物的操作間，該圖案化基板從該第一基板處理區傳送到該第二基板處理區。
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Families Citing this family (140)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) * 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US9837355B2 (en) 2016-03-22 2017-12-05 International Business Machines Corporation Method for maximizing air gap in back end of the line interconnect through via landing modification
JP6318188B2 (ja) * 2016-03-30 2018-04-25 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
KR102537286B1 (ko) 2016-07-04 2023-05-30 삼성디스플레이 주식회사 표시 기판 및 이의 제조 방법
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
KR20180061473A (ko) 2016-11-28 2018-06-08 삼성전자주식회사 반도체 장치 및 그 제조 방법
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
CN106847740B (zh) * 2016-12-28 2020-09-04 上海集成电路研发中心有限公司 一种形成空气隙/铜互连的工艺方法
WO2018125124A1 (en) * 2016-12-29 2018-07-05 Intel Corporation Creating dielectric helmet films using pulsed gas deposition
US10727114B2 (en) 2017-01-13 2020-07-28 International Business Machines Corporation Interconnect structure including airgaps and substractively etched metal lines
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10490447B1 (en) 2018-05-25 2019-11-26 International Business Machines Corporation Airgap formation in BEOL interconnect structure using sidewall image transfer
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US10714382B2 (en) 2018-10-11 2020-07-14 International Business Machines Corporation Controlling performance and reliability of conductive regions in a metallization network
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11127830B2 (en) 2019-01-17 2021-09-21 Micron Technology, Inc. Apparatus with multidielectric spacers on conductive regions of stack structures, and related methods
US11373845B2 (en) * 2020-06-05 2022-06-28 Applied Materials, Inc. Methods and apparatus for symmetrical hollow cathode electrode and discharge mode for remote plasma processes
WO2022006010A1 (en) * 2020-06-30 2022-01-06 Lam Research Corporation Reducing intralevel capacitance in semiconductor devices
TW202405224A (zh) * 2022-03-18 2024-02-01 美商蘭姆研究公司 半導體裝置中電容的降低

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090191711A1 (en) * 2008-01-30 2009-07-30 Ying Rui Hardmask open process with enhanced cd space shrink and reduction
US20130020708A1 (en) * 2011-07-19 2013-01-24 SanDisk Technologies, Inc Copper Interconnects Separated by Air Gaps and Method of Making Thereof
US20130089988A1 (en) * 2011-10-07 2013-04-11 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination

Family Cites Families (1088)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2369620A (en) 1941-03-07 1945-02-13 Battelle Development Corp Method of coating cupreous metal with tin
US3451840A (en) 1965-10-06 1969-06-24 Us Air Force Wire coated with boron nitride and boron
US3969077A (en) 1971-12-16 1976-07-13 Varian Associates Alkali metal leak detection method and apparatus
US4397812A (en) 1974-05-24 1983-08-09 Richardson Chemical Company Electroless nickel polyalloys
US4632857A (en) 1974-05-24 1986-12-30 Richardson Chemical Company Electrolessly plated product having a polymetallic catalytic film underlayer
US4232060A (en) 1979-01-22 1980-11-04 Richardson Chemical Company Method of preparing substrate surface for electroless plating and products produced thereby
US4006047A (en) 1974-07-22 1977-02-01 Amp Incorporated Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates
US3937857A (en) 1974-07-22 1976-02-10 Amp Incorporated Catalyst for electroless deposition of metals
US4265943A (en) 1978-11-27 1981-05-05 Macdermid Incorporated Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions
US4234628A (en) 1978-11-28 1980-11-18 The Harshaw Chemical Company Two-step preplate system for polymeric surfaces
US4214946A (en) 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
US4361441A (en) 1979-04-17 1982-11-30 Plasma Holdings N.V. Treatment of matter in low temperature plasmas
US4209357A (en) 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
IT1130955B (it) 1980-03-11 1986-06-18 Oronzio De Nora Impianti Procedimento per la formazione di elettroci sulle superficie di membrane semipermeabili e sistemi elettrodo-membrana cosi' prodotti
NL8004005A (nl) 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4368223A (en) 1981-06-01 1983-01-11 Asahi Glass Company, Ltd. Process for preparing nickel layer
DE3205345A1 (de) 1982-02-15 1983-09-01 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung von fluordotierten lichtleitfasern"
US4585920A (en) 1982-05-21 1986-04-29 Tegal Corporation Plasma reactor removable insert
JPS591671A (ja) 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
JPS6060060A (ja) 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4656052A (en) 1984-02-13 1987-04-07 Kyocera Corporation Process for production of high-hardness boron nitride film
US4571819A (en) 1984-11-01 1986-02-25 Ncr Corporation Method for forming trench isolation structures
JPS61276977A (ja) 1985-05-30 1986-12-06 Canon Inc 堆積膜形成法
US4807016A (en) 1985-07-15 1989-02-21 Texas Instruments Incorporated Dry etch of phosphosilicate glass with selectivity to undoped oxide
US4714520A (en) 1985-07-25 1987-12-22 Advanced Micro Devices, Inc. Method for filling a trench in an integrated circuit structure without producing voids
US4749440A (en) 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4690746A (en) 1986-02-24 1987-09-01 Genus, Inc. Interlayer dielectric process
US4715937A (en) 1986-05-05 1987-12-29 The Board Of Trustees Of The Leland Stanford Junior University Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4872947A (en) 1986-12-19 1989-10-10 Applied Materials, Inc. CVD of silicon oxide using TEOS decomposition and in-situ planarization process
US4960488A (en) 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US5228501A (en) 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
US4892753A (en) 1986-12-19 1990-01-09 Applied Materials, Inc. Process for PECVD of silicon oxide using TEOS decomposition
JPS63204726A (ja) 1987-02-20 1988-08-24 Anelva Corp 真空処理装置
US5322976A (en) 1987-02-24 1994-06-21 Polyonics Corporation Process for forming polyimide-metal laminates
US4868071A (en) 1987-02-24 1989-09-19 Polyonics Corporation Thermally stable dual metal coated laminate products made from textured polyimide film
EP0283311B1 (en) 1987-03-18 2001-08-01 Kabushiki Kaisha Toshiba Thin film forming method
US4793897A (en) 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
US4786360A (en) 1987-03-30 1988-11-22 International Business Machines Corporation Anisotropic etch process for tungsten metallurgy
US5198034A (en) 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
DE3884653T2 (de) 1987-04-03 1994-02-03 Fujitsu Ltd Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant.
US4913929A (en) 1987-04-21 1990-04-03 The Board Of Trustees Of The Leland Stanford Junior University Thermal/microwave remote plasma multiprocessing reactor and method of use
US4753898A (en) 1987-07-09 1988-06-28 Motorola, Inc. LDD CMOS process
US4904621A (en) 1987-07-16 1990-02-27 Texas Instruments Incorporated Remote plasma generation process using a two-stage showerhead
US4828649A (en) 1987-07-16 1989-05-09 Texas Instruments Incorporated Method for etching an aluminum film doped with silicon
US4838990A (en) 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for plasma etching tungsten
US4857140A (en) 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
US4878994A (en) 1987-07-16 1989-11-07 Texas Instruments Incorporated Method for etching titanium nitride local interconnects
US4820377A (en) 1987-07-16 1989-04-11 Texas Instruments Incorporated Method for cleanup processing chamber and vacuum process module
US4886570A (en) 1987-07-16 1989-12-12 Texas Instruments Incorporated Processing apparatus and method
JPS6432627A (en) 1987-07-29 1989-02-02 Hitachi Ltd Low-temperature dry etching method
US4810520A (en) 1987-09-23 1989-03-07 Magnetic Peripherals Inc. Method for controlling electroless magnetic plating
US5180435A (en) 1987-09-24 1993-01-19 Research Triangle Institute, Inc. Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer
KR930003136B1 (ko) 1987-10-14 1993-04-22 후루가와덴기 고오교오 가부시기가이샤 프라즈마 cvd에 의한 박막 형성장치
US4865685A (en) 1987-11-03 1989-09-12 North Carolina State University Dry etching of silicon carbide
US4981551A (en) 1987-11-03 1991-01-01 North Carolina State University Dry etching of silicon carbide
US4851370A (en) 1987-12-28 1989-07-25 American Telephone And Telegraph Company, At&T Bell Laboratories Fabricating a semiconductor device with low defect density oxide
US4904341A (en) 1988-08-22 1990-02-27 Westinghouse Electric Corp. Selective silicon dioxide etchant for superconductor integrated circuits
US4894352A (en) 1988-10-26 1990-01-16 Texas Instruments Inc. Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride
JPH02121330A (ja) 1988-10-31 1990-05-09 Hitachi Ltd プラズマ処理方法及び装置
KR930004115B1 (ko) 1988-10-31 1993-05-20 후지쓰 가부시끼가이샤 애싱(ashing)처리방법 및 장치
US5030319A (en) 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
JP2981243B2 (ja) 1988-12-27 1999-11-22 株式会社東芝 表面処理方法
US4985372A (en) 1989-02-17 1991-01-15 Tokyo Electron Limited Method of forming conductive layer including removal of native oxide
JP2823276B2 (ja) 1989-03-18 1998-11-11 株式会社東芝 Ｘ線マスクの製造方法および薄膜の内部応力制御装置
US4946903A (en) 1989-03-27 1990-08-07 The Research Foundation Of State University Of Ny Oxyfluoropolymers having chemically reactive surface functionality and increased surface energies
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US5061838A (en) 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
US5270125A (en) 1989-07-11 1993-12-14 Redwood Microsystems, Inc. Boron nutride membrane in wafer structure
US5013691A (en) 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
US4994404A (en) 1989-08-28 1991-02-19 Motorola, Inc. Method for forming a lightly-doped drain (LDD) structure in a semiconductor device
US4980018A (en) 1989-11-14 1990-12-25 Intel Corporation Plasma etching process for refractory metal vias
DE69111493T2 (de) 1990-03-12 1996-03-21 Ngk Insulators Ltd Wafer-Heizgeräte für Apparate, zur Halbleiterherstellung Heizanlage mit diesen Heizgeräten und Herstellung von Heizgeräten.
JP2960466B2 (ja) 1990-03-19 1999-10-06 株式会社日立製作所 半導体デバイスの配線絶縁膜の形成方法及びその装置
US5089441A (en) 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
US5328810A (en) 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
US5147692A (en) 1990-05-08 1992-09-15 Macdermid, Incorporated Electroless plating of nickel onto surfaces such as copper or fused tungston
US5238499A (en) 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5083030A (en) 1990-07-18 1992-01-21 Applied Photonics Research Double-sided radiation-assisted processing apparatus
JPH04228572A (ja) 1990-08-10 1992-08-18 Sumitomo Electric Ind Ltd 硬質窒化ホウ素合成法
US5235139A (en) 1990-09-12 1993-08-10 Macdermid, Incorprated Method for fabricating printed circuits
US5089442A (en) 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd
KR930011413B1 (ko) 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
EP0478233B1 (en) 1990-09-27 1996-01-03 AT&T Corp. Process for fabricating integrated circuits
JPH04142738A (ja) 1990-10-04 1992-05-15 Sony Corp ドライエッチング方法
US5549780A (en) 1990-10-23 1996-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for plasma processing and apparatus for plasma processing
JP2640174B2 (ja) 1990-10-30 1997-08-13 三菱電機株式会社 半導体装置およびその製造方法
JP3206916B2 (ja) 1990-11-28 2001-09-10 住友電気工業株式会社 欠陥濃度低減方法、紫外線透過用光学ガラスの製造方法及び紫外線透過用光学ガラス
US5578130A (en) 1990-12-12 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for depositing a film
WO1992012535A1 (en) 1991-01-08 1992-07-23 Fujitsu Limited Process for forming silicon oxide film
JPH04239723A (ja) 1991-01-23 1992-08-27 Nec Corp 半導体装置の製造方法
JP2697315B2 (ja) 1991-01-23 1998-01-14 日本電気株式会社 フッ素含有シリコン酸化膜の形成方法
JP2787142B2 (ja) 1991-03-01 1998-08-13 上村工業 株式会社 無電解錫、鉛又はそれらの合金めっき方法
US5897751A (en) 1991-03-11 1999-04-27 Regents Of The University Of California Method of fabricating boron containing coatings
EP0511448A1 (en) 1991-04-30 1992-11-04 International Business Machines Corporation Method and apparatus for in-situ and on-line monitoring of a trench formation process
JPH04341568A (ja) 1991-05-16 1992-11-27 Toshiba Corp 薄膜形成方法及び薄膜形成装置
DE69224640T2 (de) 1991-05-17 1998-10-01 Lam Res Corp VERFAHREN ZUR BESCHICHTUNG EINES SIOx FILMES MIT REDUZIERTER INTRINSISCHER SPANNUNG UND/ODER REDUZIERTEM WASSERSTOFFGEHALT
JP2699695B2 (ja) 1991-06-07 1998-01-19 日本電気株式会社 化学気相成長法
US5203911A (en) 1991-06-24 1993-04-20 Shipley Company Inc. Controlled electroless plating
US5279865A (en) 1991-06-28 1994-01-18 Digital Equipment Corporation High throughput interlevel dielectric gap filling process
US5240497A (en) 1991-10-08 1993-08-31 Cornell Research Foundation, Inc. Alkaline free electroless deposition
JPH05226480A (ja) 1991-12-04 1993-09-03 Nec Corp 半導体装置の製造方法
US5290382A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5279669A (en) 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5352636A (en) 1992-01-16 1994-10-04 Applied Materials, Inc. In situ method for cleaning silicon surface and forming layer thereon in same chamber
US5300463A (en) 1992-03-06 1994-04-05 Micron Technology, Inc. Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers
JP3084497B2 (ja) 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
JP2773530B2 (ja) 1992-04-15 1998-07-09 日本電気株式会社 半導体装置の製造方法
JP2792335B2 (ja) 1992-05-27 1998-09-03 日本電気株式会社 半導体装置の製造方法
WO1994000251A1 (en) 1992-06-22 1994-01-06 Lam Research Corporation A plasma cleaning method for removing residues in a plasma treatment chamber
US5252178A (en) 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
JP3688726B2 (ja) 1992-07-17 2005-08-31 株式会社東芝 半導体装置の製造方法
US5380560A (en) 1992-07-28 1995-01-10 International Business Machines Corporation Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition
US5248371A (en) 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
US5271972A (en) 1992-08-17 1993-12-21 Applied Materials, Inc. Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
US5326427A (en) 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
US5306530A (en) 1992-11-23 1994-04-26 Associated Universities, Inc. Method for producing high quality thin layer films on substrates
JP2809018B2 (ja) 1992-11-26 1998-10-08 日本電気株式会社 半導体装置およびその製造方法
KR100238629B1 (ko) 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
US5500249A (en) 1992-12-22 1996-03-19 Applied Materials, Inc. Uniform tungsten silicide films produced by chemical vapor deposition
US5756402A (en) 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film
US5624582A (en) 1993-01-21 1997-04-29 Vlsi Technology, Inc. Optimization of dry etching through the control of helium backside pressure
US5345999A (en) 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
US5302233A (en) 1993-03-19 1994-04-12 Micron Semiconductor, Inc. Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)
JP3236111B2 (ja) 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
US5800686A (en) 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
KR0142150B1 (ko) 1993-04-09 1998-07-15 윌리엄 티. 엘리스 붕소 질화물을 에칭하기 위한 방법
US5416048A (en) 1993-04-16 1995-05-16 Micron Semiconductor, Inc. Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage
DE69432383D1 (de) 1993-05-27 2003-05-08 Applied Materials Inc Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase
US5591269A (en) 1993-06-24 1997-01-07 Tokyo Electron Limited Vacuum processing apparatus
US5413670A (en) * 1993-07-08 1995-05-09 Air Products And Chemicals, Inc. Method for plasma etching or cleaning with diluted NF3
US5560779A (en) 1993-07-12 1996-10-01 Olin Corporation Apparatus for synthesizing diamond films utilizing an arc plasma
WO1995002900A1 (en) 1993-07-15 1995-01-26 Astarix, Inc. Aluminum-palladium alloy for initiation of electroless plating
DE69421465T2 (de) 1993-07-30 2000-02-10 Applied Materials Inc Verfahren zur Ablagerung von Silzium-Nitrid auf Siliziumoberflächen
US5483920A (en) 1993-08-05 1996-01-16 Board Of Governors Of Wayne State University Method of forming cubic boron nitride films
US5685946A (en) 1993-08-11 1997-11-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices
US5468597A (en) 1993-08-25 1995-11-21 Shipley Company, L.L.C. Selective metallization process
US5384284A (en) 1993-10-01 1995-01-24 Micron Semiconductor, Inc. Method to form a low resistant bond pad interconnect
SE501888C2 (sv) 1993-10-18 1995-06-12 Ladislav Bardos En metod och en apparat för generering av en urladdning i egna ångor från en radiofrekvenselektrod för kontinuerlig självförstoftning av elektroden
JPH07130713A (ja) 1993-11-04 1995-05-19 Fujitsu Ltd ダウンフローエッチング装置
JPH07161703A (ja) 1993-12-03 1995-06-23 Ricoh Co Ltd 半導体装置の製造方法
US5505816A (en) 1993-12-16 1996-04-09 International Business Machines Corporation Etching of silicon dioxide selectively to silicon nitride and polysilicon
JPH07193214A (ja) 1993-12-27 1995-07-28 Mitsubishi Electric Corp バイアホール及びその形成方法
US5415890A (en) 1994-01-03 1995-05-16 Eaton Corporation Modular apparatus and method for surface treatment of parts with liquid baths
US5403434A (en) 1994-01-06 1995-04-04 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafer
US5399237A (en) 1994-01-27 1995-03-21 Applied Materials, Inc. Etching titanium nitride using carbon-fluoride and carbon-oxide gas
US5451259A (en) 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
US5439553A (en) 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
US5468342A (en) 1994-04-28 1995-11-21 Cypress Semiconductor Corp. Method of etching an oxide layer
US6110838A (en) 1994-04-29 2000-08-29 Texas Instruments Incorporated Isotropic polysilicon plus nitride stripping
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5580421A (en) 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US5767373A (en) 1994-06-16 1998-06-16 Novartis Finance Corporation Manipulation of protoporphyrinogen oxidase enzyme activity in eukaryotic organisms
EP0697467A1 (en) 1994-07-21 1996-02-21 Applied Materials, Inc. Method and apparatus for cleaning a deposition chamber
US5563105A (en) 1994-09-30 1996-10-08 International Business Machines Corporation PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element
JPH08148470A (ja) 1994-11-21 1996-06-07 Sanyo Electric Co Ltd 半導体装置の製造方法
TW344897B (en) 1994-11-30 1998-11-11 At&T Tcorporation A process for forming gate oxides possessing different thicknesses on a semiconductor substrate
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US5772770A (en) 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
JPH08279495A (ja) 1995-02-07 1996-10-22 Seiko Epson Corp プラズマ処理装置及びその方法
US5571576A (en) 1995-02-10 1996-11-05 Watkins-Johnson Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
US6039851A (en) 1995-03-22 2000-03-21 Micron Technology, Inc. Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines
JPH08264510A (ja) 1995-03-27 1996-10-11 Toshiba Corp シリコン窒化膜のエッチング方法およびエッチング装置
US5571577A (en) 1995-04-07 1996-11-05 Board Of Trustees Operating Michigan State University Method and apparatus for plasma treatment of a surface
JP3386287B2 (ja) 1995-05-08 2003-03-17 堀池 靖浩 プラズマエッチング装置
US20010028922A1 (en) 1995-06-07 2001-10-11 Sandhu Gurtej S. High throughput ILD fill process for high aspect ratio gap fill
JP3599204B2 (ja) 1995-06-08 2004-12-08 アネルバ株式会社 Ｃｖｄ装置
JP2814370B2 (ja) 1995-06-18 1998-10-22 東京エレクトロン株式会社 プラズマ処理装置
US6197364B1 (en) 1995-08-22 2001-03-06 International Business Machines Corporation Production of electroless Co(P) with designed coercivity
US5755859A (en) 1995-08-24 1998-05-26 International Business Machines Corporation Cobalt-tin alloys and their applications for devices, chip interconnections and packaging
US6053982A (en) 1995-09-01 2000-04-25 Asm America, Inc. Wafer support system
US6228751B1 (en) 1995-09-08 2001-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US5719085A (en) 1995-09-29 1998-02-17 Intel Corporation Shallow trench isolation technique
US5716506A (en) 1995-10-06 1998-02-10 Board Of Trustees Of The University Of Illinois Electrochemical sensors for gas detection
US5635086A (en) 1995-10-10 1997-06-03 The Esab Group, Inc. Laser-plasma arc metal cutting apparatus
JPH09106899A (ja) 1995-10-11 1997-04-22 Anelva Corp プラズマｃｖｄ装置及び方法並びにドライエッチング装置及び方法
US5910340A (en) 1995-10-23 1999-06-08 C. Uyemura & Co., Ltd. Electroless nickel plating solution and method
US6015724A (en) 1995-11-02 2000-01-18 Semiconductor Energy Laboratory Co. Manufacturing method of a semiconductor device
US5599740A (en) 1995-11-16 1997-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Deposit-etch-deposit ozone/teos insulator layer method
US5648125A (en) 1995-11-16 1997-07-15 Cane; Frank N. Electroless plating process for the manufacture of printed circuit boards
JP4420986B2 (ja) 1995-11-21 2010-02-24 株式会社東芝 シャロウ・トレンチ分離半導体基板及びその製造方法
US5846598A (en) 1995-11-30 1998-12-08 International Business Machines Corporation Electroless plating of metallic features on nonmetallic or semiconductor layer without extraneous plating
JPH09153481A (ja) 1995-11-30 1997-06-10 Sumitomo Metal Ind Ltd プラズマ処理装置
US5756400A (en) 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5733816A (en) 1995-12-13 1998-03-31 Micron Technology, Inc. Method for depositing a tungsten layer on silicon
US6261637B1 (en) 1995-12-15 2001-07-17 Enthone-Omi, Inc. Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication
EP0811083B1 (en) 1995-12-19 2000-05-31 FSI International Electroless deposition of metal films with spray processor
US5883012A (en) 1995-12-21 1999-03-16 Motorola, Inc. Method of etching a trench into a semiconductor substrate
US5679606A (en) 1995-12-27 1997-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. method of forming inter-metal-dielectric structure
EP0870327B1 (en) 1995-12-27 2002-09-11 Lam Research Corporation Method for filling trenches in a semiconductor wafer
WO1997024760A1 (fr) 1995-12-28 1997-07-10 Nippon Sanso Corporation Procede et dispositif de transfert de substrats en plaques minces
US6191026B1 (en) 1996-01-09 2001-02-20 Applied Materials, Inc. Method for submicron gap filling on a semiconductor substrate
US5824599A (en) 1996-01-16 1998-10-20 Cornell Research Foundation, Inc. Protected encapsulation of catalytic layer for electroless copper interconnect
US5891513A (en) 1996-01-16 1999-04-06 Cornell Research Foundation Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications
US5674787A (en) 1996-01-16 1997-10-07 Sematech, Inc. Selective electroless copper deposited interconnect plugs for ULSI applications
US5872052A (en) 1996-02-12 1999-02-16 Micron Technology, Inc. Planarization using plasma oxidized amorphous silicon
US5648175A (en) 1996-02-14 1997-07-15 Applied Materials, Inc. Chemical vapor deposition reactor system and integrated circuit
US6004884A (en) 1996-02-15 1999-12-21 Lam Research Corporation Methods and apparatus for etching semiconductor wafers
US5656093A (en) 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
US5951601A (en) 1996-03-25 1999-09-14 Lesinski; S. George Attaching an implantable hearing aid microactuator
US5858876A (en) 1996-04-01 1999-01-12 Chartered Semiconductor Manufacturing, Ltd. Simultaneous deposit and etch method for forming a void-free and gap-filling insulator layer upon a patterned substrate layer
US5712185A (en) 1996-04-23 1998-01-27 United Microelectronics Method for forming shallow trench isolation
US5843847A (en) * 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
US6176667B1 (en) 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
US6313035B1 (en) 1996-05-31 2001-11-06 Micron Technology, Inc. Chemical vapor deposition using organometallic precursors
US6048798A (en) 1996-06-05 2000-04-11 Lam Research Corporation Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5846883A (en) 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US20010012700A1 (en) 1998-12-15 2001-08-09 Klaus F. Schuegraf Semiconductor processing methods of chemical vapor depositing sio2 on a substrate
US5661093A (en) 1996-09-12 1997-08-26 Applied Materials, Inc. Method for the stabilization of halogen-doped films through the use of multiple sealing layers
US5888906A (en) 1996-09-16 1999-03-30 Micron Technology, Inc. Plasmaless dry contact cleaning method using interhalogen compounds
US5747373A (en) 1996-09-24 1998-05-05 Taiwan Semiconductor Manufacturing Company Ltd. Nitride-oxide sidewall spacer for salicide formation
US5846375A (en) 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US5904827A (en) 1996-10-15 1999-05-18 Reynolds Tech Fabricators, Inc. Plating cell with rotary wiper and megasonic transducer
US5951776A (en) 1996-10-25 1999-09-14 Applied Materials, Inc. Self aligning lift mechanism
KR100237825B1 (ko) 1996-11-05 2000-01-15 윤종용 반도체장치 제조설비의 페디스탈
US5804259A (en) 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
US5935334A (en) 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
US5812403A (en) 1996-11-13 1998-09-22 Applied Materials, Inc. Methods and apparatus for cleaning surfaces in a substrate processing system
US5939831A (en) 1996-11-13 1999-08-17 Applied Materials, Inc. Methods and apparatus for pre-stabilized plasma generation for microwave clean applications
US5882786A (en) 1996-11-15 1999-03-16 C3, Inc. Gemstones formed of silicon carbide with diamond coating
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US6152070A (en) 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US5830805A (en) 1996-11-18 1998-11-03 Cornell Research Foundation Electroless deposition equipment or apparatus and method of performing electroless deposition
US5844195A (en) 1996-11-18 1998-12-01 Applied Materials, Inc. Remote plasma source
US5695810A (en) 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization
US5951896A (en) 1996-12-04 1999-09-14 Micro C Technologies, Inc. Rapid thermal processing heater technology and method of use
FR2756663B1 (fr) 1996-12-04 1999-02-26 Berenguer Marc Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface
US6312554B1 (en) 1996-12-05 2001-11-06 Applied Materials, Inc. Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber
JPH10172792A (ja) 1996-12-05 1998-06-26 Tokyo Electron Ltd プラズマ処理装置
US5843538A (en) 1996-12-09 1998-12-01 John L. Raymond Method for electroless nickel plating of metal substrates
US5948702A (en) 1996-12-19 1999-09-07 Texas Instruments Incorporated Selective removal of TixNy
US6120640A (en) 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
US5953635A (en) 1996-12-19 1999-09-14 Intel Corporation Interlayer dielectric with a composite dielectric stack
US5913140A (en) 1996-12-23 1999-06-15 Lam Research Corporation Method for reduction of plasma charging damage during chemical vapor deposition
KR100234539B1 (ko) 1996-12-24 1999-12-15 윤종용 반도체장치 제조용 식각 장치
US5955037A (en) 1996-12-31 1999-09-21 Atmi Ecosys Corporation Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases
DE19700231C2 (de) 1997-01-07 2001-10-04 Geesthacht Gkss Forschung Vorrichtung zum Filtern und Trennen von Strömungsmedien
US5913147A (en) 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
US5882424A (en) 1997-01-21 1999-03-16 Applied Materials, Inc. Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field
JPH10223608A (ja) 1997-02-04 1998-08-21 Sony Corp 半導体装置の製造方法
US5800621A (en) 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6013584A (en) 1997-02-19 2000-01-11 Applied Materials, Inc. Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications
US6479373B2 (en) 1997-02-20 2002-11-12 Infineon Technologies Ag Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases
US5990000A (en) 1997-02-20 1999-11-23 Applied Materials, Inc. Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
US6190233B1 (en) 1997-02-20 2001-02-20 Applied Materials, Inc. Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
US6059643A (en) 1997-02-21 2000-05-09 Aplex, Inc. Apparatus and method for polishing a flat surface using a belted polishing pad
US5789300A (en) 1997-02-25 1998-08-04 Advanced Micro Devices, Inc. Method of making IGFETs in densely and sparsely populated areas of a substrate
US6376386B1 (en) 1997-02-25 2002-04-23 Fujitsu Limited Method of etching silicon nitride by a mixture of CH2 F2, CH3F or CHF3 and an inert gas
US5850105A (en) 1997-03-21 1998-12-15 Advanced Micro Devices, Inc. Substantially planar semiconductor topography using dielectrics and chemical mechanical polish
TW376547B (en) 1997-03-27 1999-12-11 Matsushita Electric Ind Co Ltd Method and apparatus for plasma processing
US6030666A (en) 1997-03-31 2000-02-29 Lam Research Corporation Method for microwave plasma substrate heating
US6017414A (en) 1997-03-31 2000-01-25 Lam Research Corporation Method of and apparatus for detecting and controlling in situ cleaning time of vacuum processing chambers
US5786276A (en) 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
JPH10284360A (ja) 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
US5968610A (en) 1997-04-02 1999-10-19 United Microelectronics Corp. Multi-step high density plasma chemical vapor deposition process
US5866483A (en) 1997-04-04 1999-02-02 Applied Materials, Inc. Method for anisotropically etching tungsten using SF6, CHF3, and N2
US6174450B1 (en) 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6204200B1 (en) 1997-05-05 2001-03-20 Texas Instruments Incorporated Process scheme to form controlled airgaps between interconnect lines to reduce capacitance
US5969422A (en) 1997-05-15 1999-10-19 Advanced Micro Devices, Inc. Plated copper interconnect structure
US5838055A (en) 1997-05-29 1998-11-17 International Business Machines Corporation Trench sidewall patterned by vapor phase etching
US6189483B1 (en) 1997-05-29 2001-02-20 Applied Materials, Inc. Process kit
US6083344A (en) 1997-05-29 2000-07-04 Applied Materials, Inc. Multi-zone RF inductively coupled source configuration
US5937323A (en) 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
US6136685A (en) 1997-06-03 2000-10-24 Applied Materials, Inc. High deposition rate recipe for low dielectric constant films
US6706334B1 (en) 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US5872058A (en) 1997-06-17 1999-02-16 Novellus Systems, Inc. High aspect ratio gapfill process by using HDP
US5885749A (en) 1997-06-20 1999-03-23 Clear Logic, Inc. Method of customizing integrated circuits by selective secondary deposition of layer interconnect material
US5933757A (en) 1997-06-23 1999-08-03 Lsi Logic Corporation Etch process selective to cobalt silicide for formation of integrated circuit structures
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6518155B1 (en) 1997-06-30 2003-02-11 Intel Corporation Device structure and method for reducing silicide encroachment
US6184121B1 (en) 1997-07-10 2001-02-06 International Business Machines Corporation Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same
JPH1136076A (ja) 1997-07-16 1999-02-09 Tokyo Electron Ltd Ｃｖｄ成膜装置およびｃｖｄ成膜方法
US6090212A (en) 1997-08-15 2000-07-18 Micro C Technologies, Inc. Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate
US6007635A (en) 1997-11-26 1999-12-28 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US5814365A (en) 1997-08-15 1998-09-29 Micro C Technologies, Inc. Reactor and method of processing a semiconductor substate
US5926737A (en) 1997-08-19 1999-07-20 Tokyo Electron Limited Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing
US6364957B1 (en) 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
US6688375B1 (en) 1997-10-14 2004-02-10 Applied Materials, Inc. Vacuum processing system having improved substrate heating and cooling
JP3874911B2 (ja) 1997-10-15 2007-01-31 株式会社Ｎｅｏｍａｘマテリアル 微小プラスチック球へのめっき方法
GB9722028D0 (en) 1997-10-17 1997-12-17 Shipley Company Ll C Plating of polymers
US6379575B1 (en) 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US6136693A (en) 1997-10-27 2000-10-24 Chartered Semiconductor Manufacturing Ltd. Method for planarized interconnect vias using electroless plating and CMP
US6013191A (en) 1997-10-27 2000-01-11 Advanced Refractory Technologies, Inc. Method of polishing CVD diamond films by oxygen plasma
WO1999026277A1 (en) 1997-11-17 1999-05-27 Mattson Technology, Inc. Systems and methods for plasma enhanced processing of semiconductor wafers
US6063712A (en) 1997-11-25 2000-05-16 Micron Technology, Inc. Oxide etch and method of etching
US5849639A (en) 1997-11-26 1998-12-15 Lucent Technologies Inc. Method for removing etching residues and contaminants
US6077780A (en) 1997-12-03 2000-06-20 Advanced Micro Devices, Inc. Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure
US5976327A (en) 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
US6143476A (en) 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
US6083844A (en) 1997-12-22 2000-07-04 Lam Research Corporation Techniques for etching an oxide layer
US6406759B1 (en) 1998-01-08 2002-06-18 The University Of Tennessee Research Corporation Remote exposure of workpieces using a recirculated plasma
JPH11204442A (ja) 1998-01-12 1999-07-30 Tokyo Electron Ltd 枚葉式の熱処理装置
US6140234A (en) 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal
US6635578B1 (en) 1998-02-09 2003-10-21 Applied Materials, Inc Method of operating a dual chamber reactor with neutral density decoupled from ion density
US5932077A (en) 1998-02-09 1999-08-03 Reynolds Tech Fabricators, Inc. Plating cell with horizontal product load mechanism
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6627532B1 (en) 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6197688B1 (en) 1998-02-12 2001-03-06 Motorola Inc. Interconnect structure in a semiconductor device and method of formation
US6171661B1 (en) 1998-02-25 2001-01-09 Applied Materials, Inc. Deposition of copper with increased adhesion
JP4151862B2 (ja) 1998-02-26 2008-09-17 キヤノンアネルバ株式会社 Ｃｖｄ装置
US6892669B2 (en) 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
US6551939B2 (en) 1998-03-17 2003-04-22 Anneal Corporation Plasma surface treatment method and resulting device
US5920792A (en) 1998-03-19 1999-07-06 Winbond Electronics Corp High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers
US6197181B1 (en) 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6194038B1 (en) 1998-03-20 2001-02-27 Applied Materials, Inc. Method for deposition of a conformal layer on a substrate
US6565729B2 (en) 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
US6602434B1 (en) 1998-03-27 2003-08-05 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window
US6395150B1 (en) 1998-04-01 2002-05-28 Novellus Systems, Inc. Very high aspect ratio gapfill using HDP
EP1070346A1 (en) 1998-04-02 2001-01-24 Applied Materials, Inc. Method for etching low k dielectrics
US6117245A (en) 1998-04-08 2000-09-12 Applied Materials, Inc. Method and apparatus for controlling cooling and heating fluids for a gas distribution plate
US6113771A (en) 1998-04-21 2000-09-05 Applied Materials, Inc. Electro deposition chemistry
US6416647B1 (en) 1998-04-21 2002-07-09 Applied Materials, Inc. Electro-chemical deposition cell for face-up processing of single semiconductor substrates
US6179924B1 (en) 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6093594A (en) 1998-04-29 2000-07-25 Advanced Micro Devices, Inc. CMOS optimization method utilizing sacrificial sidewall spacer
US6030881A (en) 1998-05-05 2000-02-29 Novellus Systems, Inc. High throughput chemical vapor deposition process capable of filling high aspect ratio structures
US6218288B1 (en) 1998-05-11 2001-04-17 Micron Technology, Inc. Multiple step methods for forming conformal layers
DE69835276T2 (de) 1998-05-22 2007-07-12 Applied Materials, Inc., Santa Clara Verfahren zur Herstellung einer selbst-planarisierten dielektrischen Schicht für eine seichte Grabenisolation
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
KR100296137B1 (ko) 1998-06-16 2001-08-07 박종섭 보호막으로서고밀도플라즈마화학기상증착에의한절연막을갖는반도체소자제조방법
JP2000012514A (ja) 1998-06-19 2000-01-14 Hitachi Ltd 後処理方法
US6147009A (en) 1998-06-29 2000-11-14 International Business Machines Corporation Hydrogenated oxidized silicon carbon material
ATE316426T1 (de) 1998-06-30 2006-02-15 Semitool Inc Metallisierungsstrukturen für mikroelektronische anwendungen und verfahren zur herstellung dieser strukturen
US6562128B1 (en) 2001-11-28 2003-05-13 Seh America, Inc. In-situ post epitaxial treatment process
US6037018A (en) 1998-07-01 2000-03-14 Taiwan Semiconductor Maufacturing Company Shallow trench isolation filled by high density plasma chemical vapor deposition
US6248429B1 (en) 1998-07-06 2001-06-19 Micron Technology, Inc. Metallized recess in a substrate
JP2000026975A (ja) 1998-07-09 2000-01-25 Komatsu Ltd 表面処理装置
KR100265866B1 (ko) 1998-07-11 2000-12-01 황철주 반도체 제조장치
US6063683A (en) 1998-07-27 2000-05-16 Acer Semiconductor Manufacturing, Inc. Method of fabricating a self-aligned crown-shaped capacitor for high density DRAM cells
US6436816B1 (en) 1998-07-31 2002-08-20 Industrial Technology Research Institute Method of electroless plating copper on nitride barrier
US6074954A (en) 1998-08-31 2000-06-13 Applied Materials, Inc Process for control of the shape of the etch front in the etching of polysilicon
US6383951B1 (en) 1998-09-03 2002-05-07 Micron Technology, Inc. Low dielectric constant material for integrated circuit fabrication
US6440863B1 (en) 1998-09-04 2002-08-27 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming patterned oxygen containing plasma etchable layer
US6165912A (en) 1998-09-17 2000-12-26 Cfmt, Inc. Electroless metal deposition of electronic components in an enclosable vessel
US6037266A (en) 1998-09-28 2000-03-14 Taiwan Semiconductor Manufacturing Company Method for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcher
JP3725708B2 (ja) 1998-09-29 2005-12-14 株式会社東芝 半導体装置
US6277733B1 (en) 1998-10-05 2001-08-21 Texas Instruments Incorporated Oxygen-free, dry plasma process for polymer removal
JP3764594B2 (ja) 1998-10-12 2006-04-12 株式会社日立製作所 プラズマ処理方法
US6180523B1 (en) 1998-10-13 2001-01-30 Industrial Technology Research Institute Copper metallization of USLI by electroless process
US6228758B1 (en) 1998-10-14 2001-05-08 Advanced Micro Devices, Inc. Method of making dual damascene conductive interconnections and integrated circuit device comprising same
US6251802B1 (en) 1998-10-19 2001-06-26 Micron Technology, Inc. Methods of forming carbon-containing layers
US6107199A (en) 1998-10-24 2000-08-22 International Business Machines Corporation Method for improving the morphology of refractory metal thin films
JP3064268B2 (ja) 1998-10-29 2000-07-12 アプライド マテリアルズ インコーポレイテッド 成膜方法及び装置
US6176198B1 (en) 1998-11-02 2001-01-23 Applied Materials, Inc. Apparatus and method for depositing low K dielectric materials
US6462371B1 (en) 1998-11-24 2002-10-08 Micron Technology Inc. Films doped with carbon for use in integrated circuit technology
US6203863B1 (en) 1998-11-27 2001-03-20 United Microelectronics Corp. Method of gap filling
US6251236B1 (en) 1998-11-30 2001-06-26 Applied Materials, Inc. Cathode contact ring for electrochemical deposition
US6258220B1 (en) 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
US6228233B1 (en) 1998-11-30 2001-05-08 Applied Materials, Inc. Inflatable compliant bladder assembly
US6015747A (en) 1998-12-07 2000-01-18 Advanced Micro Device Method of metal/polysilicon gate formation in a field effect transistor
US6242349B1 (en) 1998-12-09 2001-06-05 Advanced Micro Devices, Inc. Method of forming copper/copper alloy interconnection with reduced electromigration
US6364954B2 (en) 1998-12-14 2002-04-02 Applied Materials, Inc. High temperature chemical vapor deposition chamber
EP1014434B1 (de) 1998-12-24 2008-03-26 ATMEL Germany GmbH Verfahren zum anisotropen plasmachemischen Trockenätzen von Siliziumnitrid-Schichten mittels eines Fluor-enthaltenden Gasgemisches
KR20000044928A (ko) 1998-12-30 2000-07-15 김영환 반도체 소자의 트랜치 형성 방법
DE19901210A1 (de) 1999-01-14 2000-07-27 Siemens Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
US6499425B1 (en) 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
TW428256B (en) 1999-01-25 2001-04-01 United Microelectronics Corp Structure of conducting-wire layer and its fabricating method
JP3330554B2 (ja) 1999-01-27 2002-09-30 松下電器産業株式会社 エッチング方法
US6245669B1 (en) 1999-02-05 2001-06-12 Taiwan Semiconductor Manufacturing Company High selectivity Si-rich SiON etch-stop layer
US6010962A (en) 1999-02-12 2000-01-04 Taiwan Semiconductor Manufacturing Company Copper chemical-mechanical-polishing (CMP) dishing
US6245670B1 (en) 1999-02-19 2001-06-12 Advanced Micro Devices, Inc. Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure
US6291282B1 (en) 1999-02-26 2001-09-18 Texas Instruments Incorporated Method of forming dual metal gate structures or CMOS devices
US6136163A (en) 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
US6312995B1 (en) 1999-03-08 2001-11-06 Advanced Micro Devices, Inc. MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration
US6197705B1 (en) 1999-03-18 2001-03-06 Chartered Semiconductor Manufacturing Ltd. Method of silicon oxide and silicon glass films deposition
US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
US6144099A (en) 1999-03-30 2000-11-07 Advanced Micro Devices, Inc. Semiconductor metalization barrier
US6238582B1 (en) 1999-03-30 2001-05-29 Veeco Instruments, Inc. Reactive ion beam etching method and a thin film head fabricated using the method
JP2000290777A (ja) 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
US6099697A (en) 1999-04-13 2000-08-08 Applied Materials, Inc. Method of and apparatus for restoring a support surface in a semiconductor wafer processing system
US6110836A (en) 1999-04-22 2000-08-29 Applied Materials, Inc. Reactive plasma etch cleaning of high aspect ratio openings
US6541671B1 (en) 2002-02-13 2003-04-01 The Regents Of The University Of California Synthesis of 2H- and 13C-substituted dithanes
JP3099066B1 (ja) 1999-05-07 2000-10-16 東京工業大学長 薄膜構造体の製造方法
JP3482904B2 (ja) 1999-05-10 2004-01-06 松下電器産業株式会社 プラズマ処理方法及び装置
US6323128B1 (en) 1999-05-26 2001-11-27 International Business Machines Corporation Method for forming Co-W-P-Au films
JP3320685B2 (ja) 1999-06-02 2002-09-03 株式会社半導体先端テクノロジーズ 微細パターン形成方法
US6174812B1 (en) 1999-06-08 2001-01-16 United Microelectronics Corp. Copper damascene technology for ultra large scale integration circuits
US20020033233A1 (en) 1999-06-08 2002-03-21 Stephen E. Savas Icp reactor having a conically-shaped plasma-generating section
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6110530A (en) 1999-06-25 2000-08-29 Applied Materials, Inc. CVD method of depositing copper films by using improved organocopper precursor blend
US6277752B1 (en) 1999-06-28 2001-08-21 Taiwan Semiconductor Manufacturing Company Multiple etch method for forming residue free patterned hard mask layer
FR2795555B1 (fr) 1999-06-28 2002-12-13 France Telecom Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6352081B1 (en) 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6258223B1 (en) 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US6516815B1 (en) 1999-07-09 2003-02-11 Applied Materials, Inc. Edge bead removal/spin rinse dry (EBR/SRD) module
US6351013B1 (en) 1999-07-13 2002-02-26 Advanced Micro Devices, Inc. Low-K sub spacer pocket formation for gate capacitance reduction
US6342733B1 (en) 1999-07-27 2002-01-29 International Business Machines Corporation Reduced electromigration and stressed induced migration of Cu wires by surface coating
US6281135B1 (en) 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
US6235643B1 (en) 1999-08-10 2001-05-22 Applied Materials, Inc. Method for etching a trench having rounded top and bottom corners in a silicon substrate
JP4819267B2 (ja) 1999-08-17 2011-11-24 東京エレクトロン株式会社 パルスプラズマ処理方法および装置
JP4220075B2 (ja) 1999-08-20 2009-02-04 東京エレクトロン株式会社 成膜方法および成膜装置
US6322716B1 (en) 1999-08-30 2001-11-27 Cypress Semiconductor Corp. Method for conditioning a plasma etch chamber
US6375748B1 (en) 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition
US6441492B1 (en) 1999-09-10 2002-08-27 James A. Cunningham Diffusion barriers for copper interconnect systems
US6548414B2 (en) 1999-09-14 2003-04-15 Infineon Technologies Ag Method of plasma etching thin films of difficult to dry etch materials
US6503843B1 (en) 1999-09-21 2003-01-07 Applied Materials, Inc. Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill
US6432819B1 (en) 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
US6153935A (en) 1999-09-30 2000-11-28 International Business Machines Corporation Dual etch stop/diffusion barrier for damascene interconnects
US6287643B1 (en) 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US6423284B1 (en) 1999-10-18 2002-07-23 Advanced Technology Materials, Inc. Fluorine abatement using steam injection in oxidation treatment of semiconductor manufacturing effluent gases
US6364949B1 (en) 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
KR100338768B1 (ko) 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
US20010041444A1 (en) 1999-10-29 2001-11-15 Jeffrey A. Shields Tin contact barc for tungsten polished contacts
DE29919142U1 (de) 1999-10-30 2001-03-08 Agrodyn Hochspannungstechnik G Plasmadüse
US6551924B1 (en) 1999-11-02 2003-04-22 International Business Machines Corporation Post metalization chem-mech polishing dielectric etch
KR20010051575A (ko) 1999-11-09 2001-06-25 조셉 제이. 스위니 살리사이드 처리를 위한 화학적 플라즈마 세정
JP3366301B2 (ja) 1999-11-10 2003-01-14 日本電気株式会社 プラズマｃｖｄ装置
US6599842B2 (en) 1999-11-29 2003-07-29 Applied Materials, Inc. Method for rounding corners and removing damaged outer surfaces of a trench
TW484170B (en) 1999-11-30 2002-04-21 Applied Materials Inc Integrated modular processing platform
US6342453B1 (en) 1999-12-03 2002-01-29 Applied Materials, Inc. Method for CVD process control for enhancing device performance
US6277763B1 (en) 1999-12-16 2001-08-21 Applied Materials, Inc. Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen
US6350697B1 (en) 1999-12-22 2002-02-26 Lam Research Corporation Method of cleaning and conditioning plasma reaction chamber
WO2001046492A1 (en) 1999-12-22 2001-06-28 Tokyo Electron Limited Method and system for reducing damage to substrates during plasma processing with a resonator source
US6534809B2 (en) 1999-12-22 2003-03-18 Agilent Technologies, Inc. Hardmask designs for dry etching FeRAM capacitor stacks
US6238513B1 (en) 1999-12-28 2001-05-29 International Business Machines Corporation Wafer lift assembly
KR20010058774A (ko) 1999-12-30 2001-07-06 박종섭 반도체 소자의 제조 방법
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6477980B1 (en) 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6772827B2 (en) 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6656831B1 (en) 2000-01-26 2003-12-02 Applied Materials, Inc. Plasma-enhanced chemical vapor deposition of a metal nitride layer
US6494959B1 (en) 2000-01-28 2002-12-17 Applied Materials, Inc. Process and apparatus for cleaning a silicon surface
JP3723712B2 (ja) 2000-02-10 2005-12-07 株式会社日立国際電気 基板処理装置及び基板処理方法
US6743473B1 (en) 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
US6350320B1 (en) 2000-02-22 2002-02-26 Applied Materials, Inc. Heater for processing chamber
US6391788B1 (en) 2000-02-25 2002-05-21 Applied Materials, Inc. Two etchant etch method
US6958098B2 (en) 2000-02-28 2005-10-25 Applied Materials, Inc. Semiconductor wafer support lift-pin assembly
JP3979791B2 (ja) 2000-03-08 2007-09-19 株式会社ルネサステクノロジ 半導体装置およびその製造方法
KR100350056B1 (ko) 2000-03-09 2002-08-24 삼성전자 주식회사 다마신 게이트 공정에서 자기정렬콘택패드 형성 방법
US6527968B1 (en) 2000-03-27 2003-03-04 Applied Materials Inc. Two-stage self-cleaning silicon etch process
JP3433721B2 (ja) 2000-03-28 2003-08-04 ティーディーケイ株式会社 ドライエッチング方法及び微細加工方法
JP2003529926A (ja) 2000-03-30 2003-10-07 東京エレクトロン株式会社 プラズマ処理システム内への調整可能なガス注入のための方法及び装置
JP4056195B2 (ja) 2000-03-30 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
DE10016340C1 (de) 2000-03-31 2001-12-06 Promos Technologies Inc Verfahren zur Herstellung von flaschenförmigen Tiefgräben zur Verwendung in Halbleitervorrichtungen
US6558564B1 (en) 2000-04-05 2003-05-06 Applied Materials Inc. Plasma energy control by inducing plasma instability
JP2001355074A (ja) 2000-04-10 2001-12-25 Sony Corp 無電解メッキ処理方法およびその装置
US7892974B2 (en) 2000-04-11 2011-02-22 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
US6762129B2 (en) 2000-04-19 2004-07-13 Matsushita Electric Industrial Co., Ltd. Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
JP2001308023A (ja) 2000-04-21 2001-11-02 Tokyo Electron Ltd 熱処理装置及び方法
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
US6458718B1 (en) 2000-04-28 2002-10-01 Asm Japan K.K. Fluorine-containing materials and processes
JP3662472B2 (ja) 2000-05-09 2005-06-22 エム・エフエスアイ株式会社 基板表面の処理方法
EP1435655A3 (en) 2000-05-10 2004-07-14 Ibiden Co., Ltd. Electrostatic chuck
US6679981B1 (en) 2000-05-11 2004-01-20 Applied Materials, Inc. Inductive plasma loop enhancing magnetron sputtering
US6418874B1 (en) 2000-05-25 2002-07-16 Applied Materials, Inc. Toroidal plasma source for plasma processing
US6335261B1 (en) 2000-05-31 2002-01-01 International Business Machines Corporation Directional CVD process with optimized etchback
US6729081B2 (en) 2000-06-09 2004-05-04 United Solar Systems Corporation Self-adhesive photovoltaic module
US6603269B1 (en) 2000-06-13 2003-08-05 Applied Materials, Inc. Resonant chamber applicator for remote plasma source
US6509623B2 (en) 2000-06-15 2003-01-21 Newport Fab, Llc Microelectronic air-gap structures and methods of forming the same
US6391753B1 (en) 2000-06-20 2002-05-21 Advanced Micro Devices, Inc. Process for forming gate conductors
US6645550B1 (en) 2000-06-22 2003-11-11 Applied Materials, Inc. Method of treating a substrate
KR100767294B1 (ko) 2000-06-23 2007-10-16 캐논 아네르바 가부시키가이샤 Ｃｖｄ장치
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
JP4371543B2 (ja) 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
US6303418B1 (en) 2000-06-30 2001-10-16 Chartered Semiconductor Manufacturing Ltd. Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer
US6440870B1 (en) 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
KR100366623B1 (ko) 2000-07-18 2003-01-09 삼성전자 주식회사 반도체 기판 또는 ｌｃｄ 기판의 세정방법
US6764958B1 (en) 2000-07-28 2004-07-20 Applied Materials Inc. Method of depositing dielectric films
US6677242B1 (en) 2000-08-12 2004-01-13 Applied Materials Inc. Integrated shallow trench isolation approach
US6800830B2 (en) 2000-08-18 2004-10-05 Hitachi Kokusai Electric, Inc. Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication
US6446572B1 (en) 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
US6335288B1 (en) 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
US6372657B1 (en) 2000-08-31 2002-04-16 Micron Technology, Inc. Method for selective etching of oxides
US6465366B1 (en) 2000-09-12 2002-10-15 Applied Materials, Inc. Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers
JP2002100578A (ja) 2000-09-25 2002-04-05 Crystage Co Ltd 薄膜形成装置
JP4717295B2 (ja) 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
US6461974B1 (en) 2000-10-06 2002-10-08 Lam Research Corporation High temperature tungsten etching process
DK200001497A (da) 2000-10-08 2002-04-09 Scanavo As Opbevaringsindretning for en databærer
KR100375102B1 (ko) 2000-10-18 2003-03-08 삼성전자주식회사 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치
US6403491B1 (en) 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window
US6610362B1 (en) 2000-11-20 2003-08-26 Intel Corporation Method of forming a carbon doped oxide layer on a substrate
KR100382725B1 (ko) 2000-11-24 2003-05-09 삼성전자주식회사 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법
AUPR179500A0 (en) 2000-11-30 2000-12-21 Saintech Pty Limited Ion source
US6291348B1 (en) 2000-11-30 2001-09-18 Advanced Micro Devices, Inc. Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed
US6544340B2 (en) 2000-12-08 2003-04-08 Applied Materials, Inc. Heater with detachable ceramic top plate
US6448537B1 (en) 2000-12-11 2002-09-10 Eric Anton Nering Single-wafer process chamber thermal convection processes
US20020124867A1 (en) 2001-01-08 2002-09-12 Apl Co., Ltd. Apparatus and method for surface cleaning using plasma
US6500772B2 (en) 2001-01-08 2002-12-31 International Business Machines Corporation Methods and materials for depositing films on semiconductor substrates
FR2819341B1 (fr) 2001-01-11 2003-06-27 St Microelectronics Sa Procede d'integration d'une cellule dram
US6879981B2 (en) 2001-01-16 2005-04-12 Corigin Ltd. Sharing live data with a non cooperative DBMS
JP4644943B2 (ja) 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
US6743732B1 (en) 2001-01-26 2004-06-01 Taiwan Semiconductor Manufacturing Company Organic low K dielectric etch with NH3 chemistry
JP2002222934A (ja) 2001-01-29 2002-08-09 Nec Corp 半導体装置およびその製造方法
US6893969B2 (en) 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
US6537733B2 (en) 2001-02-23 2003-03-25 Applied Materials, Inc. Method of depositing low dielectric constant silicon carbide layers
JP2002256235A (ja) 2001-03-01 2002-09-11 Hitachi Chem Co Ltd 接着シート、半導体装置の製造方法および半導体装置
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
JP3924483B2 (ja) 2001-03-19 2007-06-06 アイピーエス リミテッド 化学気相蒸着装置
JP5013353B2 (ja) 2001-03-28 2012-08-29 隆 杉野 成膜方法及び成膜装置
US20020177321A1 (en) 2001-03-30 2002-11-28 Li Si Yi Plasma etching of silicon carbide
US6670278B2 (en) 2001-03-30 2003-12-30 Lam Research Corporation Method of plasma etching of silicon carbide
US7084070B1 (en) 2001-03-30 2006-08-01 Lam Research Corporation Treatment for corrosion in substrate processing
FR2823032B1 (fr) 2001-04-03 2003-07-11 St Microelectronics Sa Resonateur electromecanique a poutre vibrante
JP3707394B2 (ja) 2001-04-06 2005-10-19 ソニー株式会社 無電解メッキ方法
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US6914009B2 (en) 2001-05-07 2005-07-05 Applied Materials Inc Method of making small transistor lengths
US6740601B2 (en) 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
US20020197823A1 (en) 2001-05-18 2002-12-26 Yoo Jae-Yoon Isolation method for semiconductor device
JP4720019B2 (ja) 2001-05-18 2011-07-13 東京エレクトロン株式会社 冷却機構及び処理装置
US6717189B2 (en) 2001-06-01 2004-04-06 Ebara Corporation Electroless plating liquid and semiconductor device
US6506291B2 (en) 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
US6573606B2 (en) 2001-06-14 2003-06-03 International Business Machines Corporation Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect
WO2002103782A2 (en) 2001-06-14 2002-12-27 Mattson Technology, Inc. Barrier enhancement process for copper interconnects
US20060191637A1 (en) 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
JP2003019433A (ja) 2001-07-06 2003-01-21 Sekisui Chem Co Ltd 放電プラズマ処理装置及びそれを用いた処理方法
KR100403630B1 (ko) 2001-07-07 2003-10-30 삼성전자주식회사 고밀도 플라즈마를 이용한 반도체 장치의 층간 절연막 형성방법
US6531377B2 (en) 2001-07-13 2003-03-11 Infineon Technologies Ag Method for high aspect ratio gap fill using sequential HDP-CVD
US6596599B1 (en) 2001-07-16 2003-07-22 Taiwan Semiconductor Manufacturing Company Gate stack for high performance sub-micron CMOS devices
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US6846745B1 (en) 2001-08-03 2005-01-25 Novellus Systems, Inc. High-density plasma process for filling high aspect ratio structures
US6596654B1 (en) 2001-08-24 2003-07-22 Novellus Systems, Inc. Gap fill for high aspect ratio structures
JP3914452B2 (ja) 2001-08-07 2007-05-16 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
TW554069B (en) 2001-08-10 2003-09-21 Ebara Corp Plating device and method
EP1418619A4 (en) 2001-08-13 2010-09-08 Ebara Corp SEMICONDUCTOR COMPONENTS AND MANUFACTURING METHOD THEREFOR AND PLATING SOLUTION
JP2003059914A (ja) 2001-08-21 2003-02-28 Hitachi Kokusai Electric Inc プラズマ処理装置
US20030038305A1 (en) 2001-08-21 2003-02-27 Wasshuber Christoph A. Method for manufacturing and structure of transistor with low-k spacer
US6753506B2 (en) 2001-08-23 2004-06-22 Axcelis Technologies System and method of fast ambient switching for rapid thermal processing
US6762127B2 (en) 2001-08-23 2004-07-13 Yves Pierre Boiteux Etch process for dielectric materials comprising oxidized organo silane materials
US20030129106A1 (en) 2001-08-29 2003-07-10 Applied Materials, Inc. Semiconductor processing using an efficiently coupled gas source
US6796314B1 (en) 2001-09-07 2004-09-28 Novellus Systems, Inc. Using hydrogen gas in a post-etch radio frequency-plasma contact cleaning process
US20030054608A1 (en) 2001-09-17 2003-03-20 Vanguard International Semiconductor Corporation Method for forming shallow trench isolation in semiconductor device
US6555467B2 (en) 2001-09-28 2003-04-29 Sharp Laboratories Of America, Inc. Method of making air gaps copper interconnect
US6656837B2 (en) 2001-10-11 2003-12-02 Applied Materials, Inc. Method of eliminating photoresist poisoning in damascene applications
AU2002301252B2 (en) 2001-10-12 2007-12-20 Bayer Aktiengesellschaft Photovoltaic modules with a thermoplastic hot-melt adhesive layer and a process for their production
US20030072639A1 (en) 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support
JP3759895B2 (ja) 2001-10-24 2006-03-29 松下電器産業株式会社 エッチング方法
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
KR100443121B1 (ko) 2001-11-29 2004-08-04 삼성전자주식회사 반도체 공정의 수행 방법 및 반도체 공정 장치
US6794290B1 (en) 2001-12-03 2004-09-21 Novellus Systems, Inc. Method of chemical modification of structure topography
US6905968B2 (en) 2001-12-12 2005-06-14 Applied Materials, Inc. Process for selectively etching dielectric layers
CN1605117B (zh) 2001-12-13 2010-05-12 应用材料股份有限公司 具有对氮化物肩部高度敏感性的自对准接触蚀刻
US6890850B2 (en) 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US6605874B2 (en) 2001-12-19 2003-08-12 Intel Corporation Method of making semiconductor device using an interconnect
WO2003054912A1 (en) 2001-12-20 2003-07-03 Tokyo Electron Limited Method and apparatus comprising a magnetic filter for plasma processing a workpiece
US20030116087A1 (en) 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
US20030116439A1 (en) 2001-12-21 2003-06-26 International Business Machines Corporation Method for forming encapsulated metal interconnect structures in semiconductor integrated circuit devices
KR100442167B1 (ko) 2001-12-26 2004-07-30 주성엔지니어링(주) 자연산화막 제거방법
KR100484258B1 (ko) 2001-12-27 2005-04-22 주식회사 하이닉스반도체 반도체 소자 제조 방법
US20030124842A1 (en) 2001-12-27 2003-07-03 Applied Materials, Inc. Dual-gas delivery system for chemical vapor deposition processes
US6677247B2 (en) 2002-01-07 2004-01-13 Applied Materials Inc. Method of increasing the etch selectivity of a contact sidewall to a preclean etchant
US6827815B2 (en) 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
JP2003217898A (ja) 2002-01-16 2003-07-31 Sekisui Chem Co Ltd 放電プラズマ処理装置
US6869880B2 (en) 2002-01-24 2005-03-22 Applied Materials, Inc. In situ application of etch back for improved deposition into high-aspect-ratio features
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7138014B2 (en) 2002-01-28 2006-11-21 Applied Materials, Inc. Electroless deposition apparatus
US7226504B2 (en) 2002-01-31 2007-06-05 Sharp Laboratories Of America, Inc. Method to form thick relaxed SiGe layer with trench structure
US6632325B2 (en) 2002-02-07 2003-10-14 Applied Materials, Inc. Article for use in a semiconductor processing chamber and method of fabricating same
US6821348B2 (en) 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
JP3921234B2 (ja) 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 表面処理装置及びその製造方法
US20060252265A1 (en) 2002-03-06 2006-11-09 Guangxiang Jin Etching high-kappa dielectric materials with good high-kappa foot control and silicon recess control
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
JP3813562B2 (ja) 2002-03-15 2006-08-23 富士通株式会社 半導体装置及びその製造方法
US7256370B2 (en) 2002-03-15 2007-08-14 Steed Technology, Inc. Vacuum thermal annealer
US6913651B2 (en) 2002-03-22 2005-07-05 Blue29, Llc Apparatus and method for electroless deposition of materials on semiconductor substrates
US6541397B1 (en) 2002-03-29 2003-04-01 Applied Materials, Inc. Removable amorphous carbon CMP stop
US6843858B2 (en) 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
US20030190426A1 (en) 2002-04-03 2003-10-09 Deenesh Padhi Electroless deposition method
US6921556B2 (en) 2002-04-12 2005-07-26 Asm Japan K.K. Method of film deposition using single-wafer-processing type CVD
US6897532B1 (en) 2002-04-15 2005-05-24 Cypress Semiconductor Corp. Magnetic tunneling junction configuration and a method for making the same
US6616967B1 (en) 2002-04-15 2003-09-09 Texas Instruments Incorporated Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
US7013834B2 (en) 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
KR100448714B1 (ko) 2002-04-24 2004-09-13 삼성전자주식회사 다층 나노라미네이트 구조를 갖는 반도체 장치의 절연막및 그의 형성방법
US6528409B1 (en) 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
US6908862B2 (en) 2002-05-03 2005-06-21 Applied Materials, Inc. HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features
TW538497B (en) 2002-05-16 2003-06-21 Nanya Technology Corp Method to form a bottle-shaped trench
US6825051B2 (en) 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
JP2003347278A (ja) 2002-05-23 2003-12-05 Hitachi Kokusai Electric Inc 基板処理装置、及び半導体装置の製造方法
US6500728B1 (en) 2002-05-24 2002-12-31 Taiwan Semiconductor Manufacturing Company Shallow trench isolation (STI) module to improve contact etch process window
US20030224217A1 (en) 2002-05-31 2003-12-04 Applied Materials, Inc. Metal nitride formation
KR100434110B1 (ko) 2002-06-04 2004-06-04 삼성전자주식회사 반도체 장치의 제조방법
CA2489544A1 (en) 2002-06-14 2003-12-24 Sekisui Chemical Co., Ltd. Oxide film forming method and oxide film forming apparatus
US6924191B2 (en) 2002-06-20 2005-08-02 Applied Materials, Inc. Method for fabricating a gate structure of a field effect transistor
DE10229037A1 (de) 2002-06-28 2004-01-29 Robert Bosch Gmbh Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung
WO2004006303A2 (en) 2002-07-02 2004-01-15 Applied Materials, Inc. Method for fabricating an ultra shallow junction of a field effect transistor
US6767844B2 (en) 2002-07-03 2004-07-27 Taiwan Semiconductor Manufacturing Co., Ltd Plasma chamber equipped with temperature-controlled focus ring and method of operating
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US7988398B2 (en) 2002-07-22 2011-08-02 Brooks Automation, Inc. Linear substrate transport apparatus
US20040058293A1 (en) 2002-08-06 2004-03-25 Tue Nguyen Assembly line processing system
US20060040055A1 (en) 2002-08-06 2006-02-23 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US20060046412A1 (en) 2002-08-06 2006-03-02 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US6921555B2 (en) 2002-08-06 2005-07-26 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
JP3861036B2 (ja) 2002-08-09 2006-12-20 三菱重工業株式会社 プラズマｃｖｄ装置
US7541270B2 (en) 2002-08-13 2009-06-02 Micron Technology, Inc. Methods for forming openings in doped silicon dioxide
US20040033677A1 (en) 2002-08-14 2004-02-19 Reza Arghavani Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
US6781173B2 (en) 2002-08-29 2004-08-24 Micron Technology, Inc. MRAM sense layer area control
US7223701B2 (en) 2002-09-06 2007-05-29 Intel Corporation In-situ sequential high density plasma deposition and etch processing for gap fill
US6946033B2 (en) 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
JP3991315B2 (ja) 2002-09-17 2007-10-17 キヤノンアネルバ株式会社 薄膜形成装置及び方法
US7335609B2 (en) 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
KR100500852B1 (ko) 2002-10-10 2005-07-12 최대규 원격 플라즈마 발생기
US6991959B2 (en) 2002-10-10 2006-01-31 Asm Japan K.K. Method of manufacturing silicon carbide film
JP4606713B2 (ja) 2002-10-17 2011-01-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US6699380B1 (en) 2002-10-18 2004-03-02 Applied Materials Inc. Modular electrochemical processing system
US6802944B2 (en) 2002-10-23 2004-10-12 Applied Materials, Inc. High density plasma CVD process for gapfill into high aspect ratio features
US7628897B2 (en) 2002-10-23 2009-12-08 Applied Materials, Inc. Reactive ion etching for semiconductor device feature topography modification
JP2004165317A (ja) 2002-11-12 2004-06-10 Renesas Technology Corp 半導体装置およびその製造方法
KR100862658B1 (ko) 2002-11-15 2008-10-10 삼성전자주식회사 반도체 처리 시스템의 가스 주입 장치
US6861332B2 (en) 2002-11-21 2005-03-01 Intel Corporation Air gap interconnect method
US6713873B1 (en) 2002-11-27 2004-03-30 Intel Corporation Adhesion between dielectric materials
KR100898580B1 (ko) 2002-12-07 2009-05-20 주식회사 하이닉스반도체 반도체 소자의 소자분리막 형성방법
US6858532B2 (en) 2002-12-10 2005-02-22 International Business Machines Corporation Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling
JP3838969B2 (ja) 2002-12-17 2006-10-25 沖電気工業株式会社 ドライエッチング方法
DE10260352A1 (de) 2002-12-20 2004-07-15 Infineon Technologies Ag Verfahren zum Herstellen einer Kondensatoranordnung und Kondensatoranordnung
US6720213B1 (en) 2003-01-15 2004-04-13 International Business Machines Corporation Low-K gate spacers by fluorine implantation
US6808748B2 (en) 2003-01-23 2004-10-26 Applied Materials, Inc. Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
US7500445B2 (en) 2003-01-27 2009-03-10 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
US7205248B2 (en) 2003-02-04 2007-04-17 Micron Technology, Inc. Method of eliminating residual carbon from flowable oxide fill
US7078351B2 (en) 2003-02-10 2006-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist intensive patterning and processing
US7604708B2 (en) 2003-02-14 2009-10-20 Applied Materials, Inc. Cleaning of native oxide with hydrogen-containing radicals
DE10308870B4 (de) 2003-02-28 2006-07-27 Austriamicrosystems Ag Bipolartransistor mit verbessertem Basis-Emitter-Übergang und Verfahren zur Herstellung
US6913992B2 (en) 2003-03-07 2005-07-05 Applied Materials, Inc. Method of modifying interlayer adhesion
CN100388434C (zh) 2003-03-12 2008-05-14 东京毅力科创株式会社 半导体处理用的基板保持结构和等离子体处理装置
US20040182315A1 (en) 2003-03-17 2004-09-23 Tokyo Electron Limited Reduced maintenance chemical oxide removal (COR) processing system
US6951821B2 (en) 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
JP4272654B2 (ja) 2003-04-11 2009-06-03 Ｈｏｙａ株式会社 クロム系薄膜のエッチング方法及びフォトマスクの製造方法
US7126225B2 (en) 2003-04-15 2006-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for manufacturing a semiconductor wafer with reduced delamination and peeling
US6942753B2 (en) 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US20040211357A1 (en) 2003-04-24 2004-10-28 Gadgil Pradad N. Method of manufacturing a gap-filled structure of a semiconductor device
KR20040093565A (ko) 2003-04-30 2004-11-06 주식회사 하이닉스반도체 반도체 소자의 제조방법
US6830624B2 (en) 2003-05-02 2004-12-14 Applied Materials, Inc. Blocker plate by-pass for remote plasma clean
US6903511B2 (en) 2003-05-06 2005-06-07 Zond, Inc. Generation of uniformly-distributed plasma
DE10320472A1 (de) 2003-05-08 2004-12-02 Kolektor D.O.O. Plasmabehandlung zur Reinigung von Kupfer oder Nickel
KR20040096365A (ko) 2003-05-09 2004-11-16 주식회사 하이닉스반도체 반도체소자의 제조방법
US6713835B1 (en) 2003-05-22 2004-03-30 International Business Machines Corporation Method for manufacturing a multi-level interconnect structure
US7081414B2 (en) 2003-05-23 2006-07-25 Applied Materials, Inc. Deposition-selective etch-deposition process for dielectric film gapfill
US7205240B2 (en) 2003-06-04 2007-04-17 Applied Materials, Inc. HDP-CVD multistep gapfill process
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7067432B2 (en) 2003-06-26 2006-06-27 Applied Materials, Inc. Methodology for in-situ and real-time chamber condition monitoring and process recovery during plasma processing
US7151277B2 (en) 2003-07-03 2006-12-19 The Regents Of The University Of California Selective etching of silicon carbide films
JP4245996B2 (ja) 2003-07-07 2009-04-02 株式会社荏原製作所 無電解めっきによるキャップ膜の形成方法およびこれに用いる装置
JP2005033023A (ja) 2003-07-07 2005-02-03 Sony Corp 半導体装置の製造方法および半導体装置
US7368392B2 (en) 2003-07-10 2008-05-06 Applied Materials, Inc. Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode
US6995073B2 (en) 2003-07-16 2006-02-07 Intel Corporation Air gap integration
JP3866694B2 (ja) 2003-07-30 2007-01-10 株式会社日立ハイテクノロジーズ Ｌｓｉデバイスのエッチング方法および装置
US7256134B2 (en) 2003-08-01 2007-08-14 Applied Materials, Inc. Selective etching of carbon-doped low-k dielectrics
JP4239750B2 (ja) 2003-08-13 2009-03-18 セイコーエプソン株式会社 マイクロレンズ及びマイクロレンズの製造方法、光学装置、光伝送装置、レーザプリンタ用ヘッド、並びにレーザプリンタ
US20050035455A1 (en) 2003-08-14 2005-02-17 Chenming Hu Device with low-k dielectric in close proximity thereto and its method of fabrication
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US7078312B1 (en) 2003-09-02 2006-07-18 Novellus Systems, Inc. Method for controlling etch process repeatability
US6903031B2 (en) 2003-09-03 2005-06-07 Applied Materials, Inc. In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
US7282244B2 (en) 2003-09-05 2007-10-16 General Electric Company Replaceable plate expanded thermal plasma apparatus and method
US7030034B2 (en) 2003-09-18 2006-04-18 Micron Technology, Inc. Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum
US6967405B1 (en) 2003-09-24 2005-11-22 Yongsik Yu Film for copper diffusion barrier
JP2005101141A (ja) 2003-09-24 2005-04-14 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US7071532B2 (en) 2003-09-30 2006-07-04 International Business Machines Corporation Adjustable self-aligned air gap dielectric for low capacitance wiring
US7371688B2 (en) 2003-09-30 2008-05-13 Air Products And Chemicals, Inc. Removal of transition metal ternary and/or quaternary barrier materials from a substrate
KR101109299B1 (ko) 2003-10-06 2012-01-31 어플라이드 머티어리얼스, 인코포레이티드 페이스-업 습식 프로세싱을 위해 웨이퍼 온도 균일성을강화시키는 장치
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7125792B2 (en) 2003-10-14 2006-10-24 Infineon Technologies Ag Dual damascene structure and method
US7465358B2 (en) 2003-10-15 2008-12-16 Applied Materials, Inc. Measurement techniques for controlling aspects of a electroless deposition process
US20070111519A1 (en) 2003-10-15 2007-05-17 Applied Materials, Inc. Integrated electroless deposition system
JP2005129688A (ja) 2003-10-23 2005-05-19 Hitachi Ltd 半導体装置の製造方法
KR100561848B1 (ko) 2003-11-04 2006-03-16 삼성전자주식회사 헬리컬 공진기형 플라즈마 처리 장치
US7709392B2 (en) 2003-11-05 2010-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Low K dielectric surface damage control
KR100550808B1 (ko) 2003-11-17 2006-02-09 주식회사 에스테크 전자파 차폐 성능이 우수한 다층 구조의 시트 및 그 제조방법
US20050109276A1 (en) 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
US20050112876A1 (en) 2003-11-26 2005-05-26 Chih-Ta Wu Method to form a robust TiCI4 based CVD TiN film
US7202172B2 (en) 2003-12-05 2007-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Microelectronic device having disposable spacer
US7081407B2 (en) 2003-12-16 2006-07-25 Lam Research Corporation Method of preventing damage to porous low-k materials during resist stripping
US6958286B2 (en) 2004-01-02 2005-10-25 International Business Machines Corporation Method of preventing surface roughening during hydrogen prebake of SiGe substrates
US6893967B1 (en) 2004-01-13 2005-05-17 Advanced Micro Devices, Inc. L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials
WO2005072211A2 (en) 2004-01-20 2005-08-11 Mattson Technology, Inc. System and method for removal of photoresist and residues following contact etch with a stop layer present
US20060033678A1 (en) 2004-01-26 2006-02-16 Applied Materials, Inc. Integrated electroless deposition system
US7012027B2 (en) 2004-01-27 2006-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Zirconium oxide and hafnium oxide etching using halogen containing chemicals
US7064078B2 (en) 2004-01-30 2006-06-20 Applied Materials Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
US7291550B2 (en) 2004-02-13 2007-11-06 Chartered Semiconductor Manufacturing Ltd. Method to form a contact hole
JP4698251B2 (ja) 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US20060051966A1 (en) 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US7780793B2 (en) 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US20070123051A1 (en) 2004-02-26 2007-05-31 Reza Arghavani Oxide etch with nh4-nf3 chemistry
JP4879159B2 (ja) 2004-03-05 2012-02-22 アプライド マテリアルズ インコーポレイテッド アモルファス炭素膜堆積のためのｃｖｄプロセス
US7196342B2 (en) 2004-03-10 2007-03-27 Cymer, Inc. Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
US7682985B2 (en) 2004-03-17 2010-03-23 Lam Research Corporation Dual doped polysilicon and silicon germanium etch
US7109521B2 (en) 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7358192B2 (en) 2004-04-08 2008-04-15 Applied Materials, Inc. Method and apparatus for in-situ film stack processing
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
TWI249774B (en) 2004-04-23 2006-02-21 Nanya Technology Corp Forming method of self-aligned contact for semiconductor device
US7115974B2 (en) 2004-04-27 2006-10-03 Taiwan Semiconductor Manfacturing Company, Ltd. Silicon oxycarbide and silicon carbonitride based materials for MOS devices
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
JP2007537602A (ja) 2004-05-11 2007-12-20 アプライド　マテリアルズ　インコーポレイテッド フルオロカーボン化学エッチングにおけるｈ２添加物を使用しての炭素ドープ酸化ケイ素エッチング
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US7691686B2 (en) 2004-05-21 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7049200B2 (en) 2004-05-25 2006-05-23 Applied Materials Inc. Method for forming a low thermal budget spacer
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US7226852B1 (en) 2004-06-10 2007-06-05 Lam Research Corporation Preventing damage to low-k materials during resist stripping
US7122949B2 (en) 2004-06-21 2006-10-17 Neocera, Inc. Cylindrical electron beam generating/triggering device and method for generation of electrons
US20060005856A1 (en) 2004-06-29 2006-01-12 Applied Materials, Inc. Reduction of reactive gas attack on substrate heater
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060000802A1 (en) 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US7097779B2 (en) 2004-07-06 2006-08-29 Tokyo Electron Limited Processing system and method for chemically treating a TERA layer
JP2006049817A (ja) 2004-07-07 2006-02-16 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
KR100614648B1 (ko) 2004-07-15 2006-08-23 삼성전자주식회사 반도체 소자 제조에 사용되는 기판 처리 장치
KR100584485B1 (ko) 2004-07-20 2006-05-29 동부일렉트로닉스 주식회사 반도체 소자의 금속 부식 방지 방법
US20060016783A1 (en) 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
US7217626B2 (en) 2004-07-26 2007-05-15 Texas Instruments Incorporated Transistor fabrication methods using dual sidewall spacers
US7192863B2 (en) 2004-07-30 2007-03-20 Texas Instruments Incorporated Method of eliminating etch ridges in a dual damascene process
CN102154628B (zh) 2004-08-02 2014-05-07 维高仪器股份有限公司 用于化学气相沉积反应器的多气体分配喷射器
US20060024954A1 (en) 2004-08-02 2006-02-02 Zhen-Cheng Wu Copper damascene barrier and capping layer
US20060043066A1 (en) 2004-08-26 2006-03-02 Kamp Thomas A Processes for pre-tapering silicon or silicon-germanium prior to etching shallow trenches
US20060042752A1 (en) 2004-08-30 2006-03-02 Rueger Neal R Plasma processing apparatuses and methods
US7329576B2 (en) 2004-09-02 2008-02-12 Micron Technology, Inc. Double-sided container capacitors using a sacrificial layer
US7115525B2 (en) 2004-09-02 2006-10-03 Micron Technology, Inc. Method for integrated circuit fabrication using pitch multiplication
US7390710B2 (en) 2004-09-02 2008-06-24 Micron Technology, Inc. Protection of tunnel dielectric using epitaxial silicon
US7148155B1 (en) 2004-10-26 2006-12-12 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7053003B2 (en) 2004-10-27 2006-05-30 Lam Research Corporation Photoresist conditioning with hydrogen ramping
US20060093756A1 (en) 2004-11-03 2006-05-04 Nagarajan Rajagopalan High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
US20060097397A1 (en) 2004-11-10 2006-05-11 Russell Stephen W Method for forming a dual layer, low resistance metallization during the formation of a semiconductor device
US7618515B2 (en) 2004-11-15 2009-11-17 Tokyo Electron Limited Focus ring, plasma etching apparatus and plasma etching method
US7256121B2 (en) 2004-12-02 2007-08-14 Texas Instruments Incorporated Contact resistance reduction by new barrier stack process
EP1831430A2 (en) 2004-12-21 2007-09-12 Applied Materials, Inc. An in-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US20060130971A1 (en) 2004-12-21 2006-06-22 Applied Materials, Inc. Apparatus for generating plasma by RF power
US7365016B2 (en) 2004-12-27 2008-04-29 Dalsa Semiconductor Inc. Anhydrous HF release of process for MEMS devices
US7253123B2 (en) 2005-01-10 2007-08-07 Applied Materials, Inc. Method for producing gate stack sidewall spacers
US20060162661A1 (en) 2005-01-22 2006-07-27 Applied Materials, Inc. Mixing energized and non-energized gases for silicon nitride deposition
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
US7341943B2 (en) 2005-02-08 2008-03-11 Taiwan Semiconductor Manufacturing Co., Ltd. Post etch copper cleaning using dry plasma
JP4475136B2 (ja) 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
JP4506677B2 (ja) 2005-03-11 2010-07-21 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP2006261217A (ja) 2005-03-15 2006-09-28 Canon Anelva Corp 薄膜形成方法
US7253118B2 (en) 2005-03-15 2007-08-07 Micron Technology, Inc. Pitch reduced patterns relative to photolithography features
US20060251801A1 (en) 2005-03-18 2006-11-09 Weidman Timothy W In-situ silicidation metallization process
KR100681390B1 (ko) 2005-03-18 2007-02-09 (주)한빛레이저 레이저빔의 초점위치를 임의의 3차원으로 고속이동 시킬 수 있는 광집속장치와 광편향장치를 이용한 반도체웨이퍼의 레이저 다이싱 및 스크라이빙 방법
TW200734482A (en) 2005-03-18 2007-09-16 Applied Materials Inc Electroless deposition process on a contact containing silicon or silicide
US20060210723A1 (en) 2005-03-21 2006-09-21 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
KR100610465B1 (ko) 2005-03-25 2006-08-08 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US7442274B2 (en) 2005-03-28 2008-10-28 Tokyo Electron Limited Plasma etching method and apparatus therefor
US7611944B2 (en) 2005-03-28 2009-11-03 Micron Technology, Inc. Integrated circuit fabrication
KR100689826B1 (ko) 2005-03-29 2007-03-08 삼성전자주식회사 불소 함유된 화학적 식각 가스를 사용하는 고밀도 플라즈마화학기상증착 방법들 및 이를 채택하여 반도체 소자를제조하는 방법들
US20060228889A1 (en) 2005-03-31 2006-10-12 Edelberg Erik A Methods of removing resist from substrates in resist stripping chambers
US7288482B2 (en) 2005-05-04 2007-10-30 International Business Machines Corporation Silicon nitride etching methods
US7431856B2 (en) 2005-05-18 2008-10-07 National Research Council Of Canada Nano-tip fabrication by spatially controlled etching
KR100745067B1 (ko) 2005-05-18 2007-08-01 주식회사 하이닉스반도체 반도체 소자의 트렌치 소자분리막 및 그 형성방법
US20060266288A1 (en) 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
JP4853857B2 (ja) 2005-06-15 2012-01-11 東京エレクトロン株式会社 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置
JP4554461B2 (ja) 2005-07-26 2010-09-29 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
DE102006038885B4 (de) 2005-08-24 2013-10-10 Wonik Ips Co., Ltd. Verfahren zum Abscheiden einer Ge-Sb-Te-Dünnschicht
US20070056925A1 (en) 2005-09-09 2007-03-15 Lam Research Corporation Selective etch of films with high dielectric constant with H2 addition
US20070071888A1 (en) 2005-09-21 2007-03-29 Arulkumar Shanmugasundram Method and apparatus for forming device features in an integrated electroless deposition system
DE102005047081B4 (de) 2005-09-30 2019-01-31 Robert Bosch Gmbh Verfahren zum plasmalosen Ätzen von Silizium mit dem Ätzgas ClF3 oder XeF2
US8102123B2 (en) 2005-10-04 2012-01-24 Topanga Technologies, Inc. External resonator electrode-less plasma lamp and method of exciting with radio-frequency energy
KR100703014B1 (ko) 2005-10-26 2007-04-06 삼성전자주식회사 실리콘 산화물 식각액 및 이를 이용한 반도체 소자의 제조 방법
US7884032B2 (en) 2005-10-28 2011-02-08 Applied Materials, Inc. Thin film deposition
EP1780779A3 (en) 2005-10-28 2008-06-11 Interuniversitair Microelektronica Centrum ( Imec) A plasma for patterning advanced gate stacks
US20070099806A1 (en) 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
US7696101B2 (en) 2005-11-01 2010-04-13 Micron Technology, Inc. Process for increasing feature density during the manufacture of a semiconductor device
WO2007142690A2 (en) 2005-11-04 2007-12-13 Applied Materials, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US20070107750A1 (en) 2005-11-14 2007-05-17 Sawin Herbert H Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers
JP4918778B2 (ja) 2005-11-16 2012-04-18 株式会社日立製作所 半導体集積回路装置の製造方法
US20070117396A1 (en) 2005-11-22 2007-05-24 Dingjun Wu Selective etching of titanium nitride with xenon difluoride
US7405160B2 (en) 2005-12-13 2008-07-29 Tokyo Electron Limited Method of making semiconductor device
JP2007173383A (ja) 2005-12-20 2007-07-05 Sharp Corp トレンチ素子分離領域の形成方法、窒化シリコン膜ライナーの形成方法、半導体装置の製造方法
US7449538B2 (en) 2005-12-30 2008-11-11 Hynix Semiconductor Inc. Hard mask composition and method for manufacturing semiconductor device
JP2007191792A (ja) 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
US7494545B2 (en) 2006-02-03 2009-02-24 Applied Materials, Inc. Epitaxial deposition process and apparatus
KR100752622B1 (ko) 2006-02-17 2007-08-30 한양대학교 산학협력단 원거리 플라즈마 발생장치
JP2009530288A (ja) 2006-03-16 2009-08-27 ノバルティス アクチエンゲゼルシャフト 特に黒色腫の処置のためのヘテロ環式有機化合物
US8343280B2 (en) 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
US7628574B2 (en) 2006-03-28 2009-12-08 Arcus Technology, Inc. Apparatus and method for processing substrates using one or more vacuum transfer chamber units
US7906032B2 (en) 2006-03-31 2011-03-15 Tokyo Electron Limited Method for conditioning a process chamber
US7780865B2 (en) 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
JP5042517B2 (ja) 2006-04-10 2012-10-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN100539080C (zh) 2006-04-12 2009-09-09 中芯国际集成电路制造(上海)有限公司 通过自对准形成多晶硅浮栅结构的方法
US7297564B1 (en) 2006-05-02 2007-11-20 Sharp Laboratories Of America, Inc. Fabrication of vertical sidewalls on (110) silicon substrates for use in Si/SiGe photodetectors
US7601607B2 (en) 2006-05-15 2009-10-13 Chartered Semiconductor Manufacturing, Ltd. Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects
JP5578389B2 (ja) 2006-05-16 2014-08-27 Ｎｌｔテクノロジー株式会社 積層膜パターン形成方法及びゲート電極形成方法
JP2007311540A (ja) 2006-05-18 2007-11-29 Renesas Technology Corp 半導体装置の製造方法
US20070266946A1 (en) 2006-05-22 2007-11-22 Byung-Chul Choi Semiconductor device manufacturing apparatus and method of using the same
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US20070277734A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US20070281106A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US7932181B2 (en) 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
US7618889B2 (en) 2006-07-18 2009-11-17 Applied Materials, Inc. Dual damascene fabrication with low k materials
KR20080013174A (ko) 2006-08-07 2008-02-13 주식회사 하이닉스반도체 캐패시터의 스토리지노드 분리 방법
US20080124937A1 (en) 2006-08-16 2008-05-29 Songlin Xu Selective etching method and apparatus
KR100818708B1 (ko) 2006-08-18 2008-04-01 주식회사 하이닉스반도체 표면 세정을 포함하는 반도체소자 제조방법
US7575007B2 (en) 2006-08-23 2009-08-18 Applied Materials, Inc. Chamber recovery after opening barrier over copper
US8110787B1 (en) 2006-08-23 2012-02-07 ON Semiconductor Trading, Ltd Image sensor with a reflective waveguide
US20080063810A1 (en) 2006-08-23 2008-03-13 Applied Materials, Inc. In-situ process state monitoring of chamber
US7452766B2 (en) 2006-08-31 2008-11-18 Micron Technology, Inc. Finned memory cells and the fabrication thereof
US20080075668A1 (en) 2006-09-27 2008-03-27 Goldstein Alan H Security Device Using Reversibly Self-Assembling Systems
CN101153396B (zh) * 2006-09-30 2010-06-09 中芯国际集成电路制造(上海)有限公司 等离子刻蚀方法
JP2008103645A (ja) 2006-10-20 2008-05-01 Toshiba Corp 半導体装置の製造方法
US20080099147A1 (en) 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
JP2008109043A (ja) 2006-10-27 2008-05-08 Oki Electric Ind Co Ltd 半導体装置の製造方法および半導体装置
US20080102640A1 (en) 2006-10-30 2008-05-01 Applied Materials, Inc. Etching oxide with high selectivity to titanium nitride
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7880232B2 (en) 2006-11-01 2011-02-01 Micron Technology, Inc. Processes and apparatus having a semiconductor fin
US7700479B2 (en) 2006-11-06 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning processes in the formation of integrated circuit interconnect structures
US20080142483A1 (en) 2006-12-07 2008-06-19 Applied Materials, Inc. Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills
US7939422B2 (en) 2006-12-07 2011-05-10 Applied Materials, Inc. Methods of thin film process
JP2010512650A (ja) 2006-12-11 2010-04-22 アプライド マテリアルズ インコーポレイテッド 乾燥フォトレジスト除去プロセスと装置
WO2008074672A1 (en) 2006-12-20 2008-06-26 Nxp B.V. Improving adhesion of diffusion barrier on cu containing interconnect element
JP5229711B2 (ja) 2006-12-25 2013-07-03 国立大学法人名古屋大学 パターン形成方法、および半導体装置の製造方法
US7808053B2 (en) 2006-12-29 2010-10-05 Intel Corporation Method, apparatus, and system for flash memory
US20080157225A1 (en) 2006-12-29 2008-07-03 Suman Datta SRAM and logic transistors with variable height multi-gate transistor architecture
KR20080063988A (ko) 2007-01-03 2008-07-08 삼성전자주식회사 중성빔을 이용한 식각장치
JP4421618B2 (ja) 2007-01-17 2010-02-24 東京エレクトロン株式会社 フィン型電界効果トランジスタの製造方法
US7728364B2 (en) 2007-01-19 2010-06-01 International Business Machines Corporation Enhanced mobility CMOS transistors with a V-shaped channel with self-alignment to shallow trench isolation
KR100878015B1 (ko) 2007-01-31 2009-01-13 삼성전자주식회사 산화물 제거 방법 및 이를 이용한 트렌치 매립 방법
US20080202892A1 (en) 2007-02-27 2008-08-28 Smith John M Stacked process chambers for substrate vacuum processing tool
KR100853485B1 (ko) 2007-03-19 2008-08-21 주식회사 하이닉스반도체 리세스 게이트를 갖는 반도체 소자의 제조 방법
US20080233709A1 (en) 2007-03-22 2008-09-25 Infineon Technologies North America Corp. Method for removing material from a semiconductor
US7815814B2 (en) 2007-03-23 2010-10-19 Tokyo Electron Limited Method and system for dry etching a metal nitride
CN101657565A (zh) 2007-04-17 2010-02-24 株式会社爱发科 成膜装置
JP5135879B2 (ja) 2007-05-21 2013-02-06 富士電機株式会社 炭化珪素半導体装置の製造方法
KR100777043B1 (ko) 2007-05-22 2007-11-16 주식회사 테스 비정질 탄소막 형성 방법 및 이를 이용한 반도체 소자의제조 방법
US8084105B2 (en) 2007-05-23 2011-12-27 Applied Materials, Inc. Method of depositing boron nitride and boron nitride-derived materials
US7807578B2 (en) 2007-06-01 2010-10-05 Applied Materials, Inc. Frequency doubling using spacer mask
US7585716B2 (en) 2007-06-27 2009-09-08 International Business Machines Corporation High-k/metal gate MOSFET with reduced parasitic capacitance
KR100877107B1 (ko) 2007-06-28 2009-01-07 주식회사 하이닉스반도체 반도체 소자의 층간절연막 형성방법
KR101050454B1 (ko) 2007-07-02 2011-07-19 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 및 그 형성방법
US8021514B2 (en) 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
JP5047881B2 (ja) 2007-07-13 2012-10-10 東京応化工業株式会社 窒化チタン剥離液、及び窒化チタン被膜の剥離方法
DE102007033685A1 (de) 2007-07-19 2009-01-22 Robert Bosch Gmbh Verfahren zum Ätzen einer Schicht auf einem Silizium-Halbleitersubstrat
US8008166B2 (en) 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
JP5316412B2 (ja) 2007-08-31 2013-10-16 東京エレクトロン株式会社 半導体装置の製造方法
JP5347294B2 (ja) 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US7781332B2 (en) 2007-09-19 2010-08-24 International Business Machines Corporation Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer
US8313610B2 (en) 2007-09-25 2012-11-20 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
US8298931B2 (en) 2007-09-28 2012-10-30 Sandisk 3D Llc Dual damascene with amorphous carbon for 3D deep via/trench application
US20090084317A1 (en) 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
JP2009088522A (ja) 2007-09-28 2009-04-23 Hynix Semiconductor Inc 半導体装置のリセスゲート製造方法
EP2215282B1 (en) 2007-10-11 2016-11-30 Valence Process Equipment, Inc. Chemical vapor deposition reactor
US7838390B2 (en) 2007-10-12 2010-11-23 Samsung Electronics Co., Ltd. Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein
US7976631B2 (en) 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US8252696B2 (en) 2007-10-22 2012-08-28 Applied Materials, Inc. Selective etching of silicon nitride
US7871926B2 (en) 2007-10-22 2011-01-18 Applied Materials, Inc. Methods and systems for forming at least one dielectric layer
JP5254351B2 (ja) 2007-11-08 2013-08-07 ラム リサーチ コーポレーション 酸化物スペーサを使用したピッチ低減
US7964040B2 (en) 2007-11-08 2011-06-21 Applied Materials, Inc. Multi-port pumping system for substrate processing chambers
US7704849B2 (en) 2007-12-03 2010-04-27 Micron Technology, Inc. Methods of forming trench isolation in silicon of a semiconductor substrate by plasma
WO2009071627A2 (de) 2007-12-04 2009-06-11 Parabel Ag Mehrschichtiges solarelement
US8187486B1 (en) 2007-12-13 2012-05-29 Novellus Systems, Inc. Modulating etch selectivity and etch rate of silicon nitride thin films
JP2009170890A (ja) 2007-12-18 2009-07-30 Takashima & Co Ltd 可撓性膜状太陽電池複層体
US8512509B2 (en) 2007-12-19 2013-08-20 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold
US20090170331A1 (en) 2007-12-27 2009-07-02 International Business Machines Corporation Method of forming a bottle-shaped trench by ion implantation
US7910477B2 (en) 2007-12-28 2011-03-22 Texas Instruments Incorporated Etch residue reduction by ash methodology
US8018023B2 (en) 2008-01-14 2011-09-13 Kabushiki Kaisha Toshiba Trench sidewall protection by a carbon-rich layer in a semiconductor device
TW200933812A (en) 2008-01-30 2009-08-01 Promos Technologies Inc Process for forming trench isolation structure and semiconductor device produced thereby
US20090194810A1 (en) 2008-01-31 2009-08-06 Masahiro Kiyotoshi Semiconductor device using element isolation region of trench isolation structure and manufacturing method thereof
US20090258162A1 (en) 2008-04-12 2009-10-15 Applied Materials, Inc. Plasma processing apparatus and method
JP2009266952A (ja) 2008-04-23 2009-11-12 Seiko Epson Corp デバイスの製造方法及び製造装置
US7977246B2 (en) 2008-04-25 2011-07-12 Applied Materials, Inc. Thermal annealing method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US20090275206A1 (en) 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias
US20090277874A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate
US8357435B2 (en) 2008-05-09 2013-01-22 Applied Materials, Inc. Flowable dielectric equipment and processes
US20090277587A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Flowable dielectric equipment and processes
US8277670B2 (en) 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
KR100998011B1 (ko) 2008-05-22 2010-12-03 삼성엘이디 주식회사 화학기상 증착장치
DE102008026134A1 (de) 2008-05-30 2009-12-17 Advanced Micro Devices, Inc., Sunnyvale Mikrostrukturbauelement mit einer Metallisierungsstruktur mit selbstjustierten Luftspalten zwischen dichtliegenden Metallleitungen
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
JP4473344B2 (ja) 2008-07-15 2010-06-02 キヤノンアネルバ株式会社 プラズマ処理方法及びプラズマ処理装置
KR20100013980A (ko) 2008-08-01 2010-02-10 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
US8268729B2 (en) 2008-08-21 2012-09-18 International Business Machines Corporation Smooth and vertical semiconductor fin structure
KR100997502B1 (ko) 2008-08-26 2010-11-30 금호석유화학 주식회사 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법
KR101025741B1 (ko) 2008-09-02 2011-04-04 주식회사 하이닉스반도체 수직 채널 트랜지스터의 활성필라 제조방법
US8871645B2 (en) 2008-09-11 2014-10-28 Applied Materials, Inc. Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
US7709396B2 (en) 2008-09-19 2010-05-04 Applied Materials, Inc. Integral patterning of large features along with array using spacer mask patterning process flow
US7968441B2 (en) 2008-10-08 2011-06-28 Applied Materials, Inc. Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage
US7910491B2 (en) 2008-10-16 2011-03-22 Applied Materials, Inc. Gapfill improvement with low etch rate dielectric liners
US8563090B2 (en) 2008-10-16 2013-10-22 Applied Materials, Inc. Boron film interface engineering
US20100099263A1 (en) 2008-10-20 2010-04-22 Applied Materials, Inc. Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects
US8173547B2 (en) 2008-10-23 2012-05-08 Lam Research Corporation Silicon etch with passivation using plasma enhanced oxidation
US20100101727A1 (en) 2008-10-27 2010-04-29 Helin Ji Capacitively coupled remote plasma source with large operating pressure range
JP5396065B2 (ja) 2008-10-28 2014-01-22 株式会社日立製作所 半導体装置の製造方法
US20100144140A1 (en) 2008-12-10 2010-06-10 Novellus Systems, Inc. Methods for depositing tungsten films having low resistivity for gapfill applications
US8058179B1 (en) 2008-12-23 2011-11-15 Novellus Systems, Inc. Atomic layer removal process with higher etch amount
KR20100074508A (ko) 2008-12-24 2010-07-02 주식회사 동부하이텍 반도체 소자의 제조 방법
JP2010154699A (ja) 2008-12-26 2010-07-08 Hitachi Ltd 磁束可変型回転電機
KR101587601B1 (ko) 2009-01-14 2016-01-25 삼성전자주식회사 비휘발성 메모리 장치의 제조 방법
US20100187694A1 (en) 2009-01-28 2010-07-29 Chen-Hua Yu Through-Silicon Via Sidewall Isolation Structure
KR20100087915A (ko) 2009-01-29 2010-08-06 삼성전자주식회사 실린더형 스토리지 노드를 포함하는 반도체 메모리 소자 및그 제조 방법
US7964517B2 (en) 2009-01-29 2011-06-21 Texas Instruments Incorporated Use of a biased precoat for reduced first wafer defects in high-density plasma process
JP5210191B2 (ja) 2009-02-03 2013-06-12 東京エレクトロン株式会社 窒化珪素膜のドライエッチング方法
KR101617781B1 (ko) 2009-02-13 2016-05-03 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 챔버 전극을 위한 ｒｆ 버스 및 ｒｆ 리턴 버스
US8148749B2 (en) 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
KR20100099535A (ko) 2009-03-03 2010-09-13 주성엔지니어링(주) 기판처리장치 및 그의 제조방법
US9378930B2 (en) 2009-03-05 2016-06-28 Applied Materials, Inc. Inductively coupled plasma reactor having RF phase control and methods of use thereof
KR20110138142A (ko) 2009-03-17 2011-12-26 로트 운트 라우 악치엔게젤샤프트 기판 처리 장치 및 기판 처리 방법
KR101539699B1 (ko) 2009-03-19 2015-07-27 삼성전자주식회사 3차원 구조의 비휘발성 메모리 소자 및 그 제조방법
US8193075B2 (en) 2009-04-20 2012-06-05 Applied Materials, Inc. Remote hydrogen plasma with ion filter for terminating silicon dangling bonds
US9312154B2 (en) 2009-04-21 2016-04-12 Applied Materials, Inc. CVD apparatus for improved film thickness non-uniformity and particle performance
US8492292B2 (en) 2009-06-29 2013-07-23 Applied Materials, Inc. Methods of forming oxide layers on substrates
KR101598332B1 (ko) 2009-07-15 2016-03-14 어플라이드 머티어리얼스, 인코포레이티드 Ｃｖｄ 챔버의 유동 제어 피쳐
US8124531B2 (en) 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US7935643B2 (en) 2009-08-06 2011-05-03 Applied Materials, Inc. Stress management for tensile films
US7989365B2 (en) 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
CN102598130A (zh) 2009-08-26 2012-07-18 威科仪器股份有限公司 用于在磁记录介质上制作图案的系统
US8211808B2 (en) 2009-08-31 2012-07-03 Applied Materials, Inc. Silicon-selective dry etch for carbon-containing films
US20110073136A1 (en) 2009-09-10 2011-03-31 Matheson Tri-Gas, Inc. Removal of gallium and gallium containing materials
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US8329587B2 (en) 2009-10-05 2012-12-11 Applied Materials, Inc. Post-planarization densification
JP5257328B2 (ja) 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
US8455364B2 (en) 2009-11-06 2013-06-04 International Business Machines Corporation Sidewall image transfer using the lithographic stack as the mandrel
US8742665B2 (en) 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
US8771538B2 (en) 2009-11-18 2014-07-08 Applied Materials, Inc. Plasma source design
TWI579916B (zh) 2009-12-09 2017-04-21 諾菲勒斯系統公司 整合可流動氧化物及頂蓋氧化物之新穎間隙填充
US8202803B2 (en) 2009-12-11 2012-06-19 Tokyo Electron Limited Method to remove capping layer of insulation dielectric in interconnect structures
US20110151677A1 (en) 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
US8501629B2 (en) 2009-12-23 2013-08-06 Applied Materials, Inc. Smooth SiConi etch for silicon-containing films
JP4927158B2 (ja) 2009-12-25 2012-05-09 東京エレクトロン株式会社 基板処理方法、その基板処理方法を実行させるためのプログラムを記録した記録媒体及び基板処理装置
JP5710209B2 (ja) 2010-01-18 2015-04-30 東京エレクトロン株式会社 電磁波給電機構およびマイクロ波導入機構
JP5166458B2 (ja) 2010-01-22 2013-03-21 株式会社東芝 半導体装置及びその製造方法
JP5608384B2 (ja) 2010-02-05 2014-10-15 東京エレクトロン株式会社 半導体装置の製造方法及びプラズマエッチング装置
US8361338B2 (en) 2010-02-11 2013-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hard mask removal method
US8456009B2 (en) 2010-02-18 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having an air-gap region and a method of manufacturing the same
KR101853802B1 (ko) 2010-03-05 2018-05-02 어플라이드 머티어리얼스, 인코포레이티드 라디칼­성분 ｃｖｄ에 의한 컨포멀 층들
JP5450187B2 (ja) 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
EP2548238B8 (en) 2010-03-16 2015-06-17 SanDisk 3D, LLC Method of forming bottom electrodes for use with metal oxide resistivity switching layers
US8435902B2 (en) 2010-03-17 2013-05-07 Applied Materials, Inc. Invertable pattern loading with dry etch
US8288268B2 (en) 2010-04-29 2012-10-16 International Business Machines Corporation Microelectronic structure including air gap
US8475674B2 (en) 2010-04-30 2013-07-02 Applied Materials, Inc. High-temperature selective dry etch having reduced post-etch solid residue
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US8373239B2 (en) 2010-06-08 2013-02-12 International Business Machines Corporation Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric
US20120009796A1 (en) 2010-07-09 2012-01-12 Applied Materials, Inc. Post-ash sidewall healing
US8278203B2 (en) 2010-07-28 2012-10-02 Sandisk Technologies Inc. Metal control gate formation in non-volatile storage
US9184028B2 (en) 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
KR20120029291A (ko) 2010-09-16 2012-03-26 삼성전자주식회사 반도체 소자 및 그 제조 방법
US8183134B2 (en) 2010-10-19 2012-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces
JP5544343B2 (ja) 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
US20130224960A1 (en) 2010-10-29 2013-08-29 Applied Materials, Inc. Methods for etching oxide layers using process gas pulsing
US9111994B2 (en) 2010-11-01 2015-08-18 Magnachip Semiconductor, Ltd. Semiconductor device and method of fabricating the same
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
US8389416B2 (en) 2010-11-22 2013-03-05 Tokyo Electron Limited Process for etching silicon with selectivity to silicon-germanium
KR20120058962A (ko) 2010-11-30 2012-06-08 삼성전자주식회사 반도체 장치의 제조 방법
US8741778B2 (en) 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
JP5728221B2 (ja) 2010-12-24 2015-06-03 東京エレクトロン株式会社 基板処理方法及び記憶媒体
KR101529578B1 (ko) 2011-01-14 2015-06-19 성균관대학교산학협력단 플라즈마 기판 처리 장치 및 방법
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8363476B2 (en) 2011-01-19 2013-01-29 Macronix International Co., Ltd. Memory device, manufacturing method and operating method of the same
US9018692B2 (en) 2011-01-19 2015-04-28 Macronix International Co., Ltd. Low cost scalable 3D memory
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
TW201246362A (en) 2011-03-01 2012-11-16 Univ King Abdullah Sci & Tech Silicon germanium mask for deep silicon etching
WO2012118897A2 (en) 2011-03-01 2012-09-07 Applied Materials, Inc. Abatement and strip process chamber in a dual loadlock configuration
FR2972563B1 (fr) 2011-03-07 2013-03-01 Altis Semiconductor Snc Procédé de traitement d'une couche de nitrure de métal oxydée
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
CN103430285B (zh) 2011-03-22 2016-06-01 应用材料公司 用于化学气相沉积腔室的衬里组件
JP5815967B2 (ja) 2011-03-31 2015-11-17 東京エレクトロン株式会社 基板洗浄装置及び真空処理システム
JP6003011B2 (ja) 2011-03-31 2016-10-05 東京エレクトロン株式会社 基板処理装置
US8415250B2 (en) 2011-04-29 2013-04-09 International Business Machines Corporation Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device
US20120285621A1 (en) 2011-05-10 2012-11-15 Applied Materials, Inc. Semiconductor chamber apparatus for dielectric processing
US9012283B2 (en) 2011-05-16 2015-04-21 International Business Machines Corporation Integrated circuit (IC) chip having both metal and silicon gate field effect transistors (FETs) and method of manufacture
US8562785B2 (en) 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
US8637372B2 (en) 2011-06-29 2014-01-28 GlobalFoundries, Inc. Methods for fabricating a FINFET integrated circuit on a bulk silicon substrate
US8883637B2 (en) 2011-06-30 2014-11-11 Novellus Systems, Inc. Systems and methods for controlling etch selectivity of various materials
KR20110086540A (ko) 2011-07-12 2011-07-28 조인숙 불소화합물을 이용한 필름의 선택적인 식각 방법
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
KR101271247B1 (ko) 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
US20130045605A1 (en) 2011-08-18 2013-02-21 Applied Materials, Inc. Dry-etch for silicon-and-nitrogen-containing films
US8735291B2 (en) 2011-08-25 2014-05-27 Tokyo Electron Limited Method for etching high-k dielectric using pulsed bias power
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US20130217243A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
US8808562B2 (en) 2011-09-12 2014-08-19 Tokyo Electron Limited Dry metal etching method
US20130260564A1 (en) 2011-09-26 2013-10-03 Applied Materials, Inc. Insensitive dry removal process for semiconductor integration
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
JP5740281B2 (ja) 2011-10-20 2015-06-24 東京エレクトロン株式会社 金属膜のドライエッチング方法
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
JP5779482B2 (ja) 2011-11-15 2015-09-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US8900364B2 (en) 2011-11-29 2014-12-02 Intermolecular, Inc. High productivity vapor processing system
US8603891B2 (en) 2012-01-20 2013-12-10 Micron Technology, Inc. Methods for forming vertical memory devices and apparatuses
US8747686B2 (en) 2012-01-27 2014-06-10 Applied Materials, Inc. Methods of end point detection for substrate fabrication processes
KR20130092884A (ko) 2012-02-13 2013-08-21 에스케이하이닉스 주식회사 반도체 소자의 배선 구조체 및 제조 방법
KR102064627B1 (ko) 2012-03-27 2020-01-09 노벨러스 시스템즈, 인코포레이티드 텅스텐 피처 충진
US20130284369A1 (en) 2012-04-26 2013-10-31 Applied Materials, Inc. Two-phase operation of plasma chamber by phase locked loop
US9161428B2 (en) 2012-04-26 2015-10-13 Applied Materials, Inc. Independent control of RF phases of separate coils of an inductively coupled plasma reactor
JP2013235912A (ja) 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
US20130298942A1 (en) 2012-05-14 2013-11-14 Applied Materials, Inc. Etch remnant removal
US9034773B2 (en) 2012-07-02 2015-05-19 Novellus Systems, Inc. Removal of native oxide with high selectivity
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US8772888B2 (en) 2012-08-10 2014-07-08 Avalanche Technology Inc. MTJ MRAM with stud patterning
US8747680B1 (en) 2012-08-14 2014-06-10 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device
US8993058B2 (en) 2012-08-28 2015-03-31 Applied Materials, Inc. Methods and apparatus for forming tantalum silicate layers on germanium or III-V semiconductor devices
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US20140099794A1 (en) 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
JP6035117B2 (ja) 2012-11-09 2016-11-30 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
WO2014092856A1 (en) 2012-12-14 2014-06-19 The Penn State Research Foundation Ultra-high speed anisotropic reactive ion etching
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US9093389B2 (en) 2013-01-16 2015-07-28 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
JP2014154421A (ja) 2013-02-12 2014-08-25 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法、および高周波発生器
US20140234466A1 (en) 2013-02-21 2014-08-21 HGST Netherlands B.V. Imprint mold and method for making using sidewall spacer line doubling
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US20140262031A1 (en) 2013-03-12 2014-09-18 Sergey G. BELOSTOTSKIY Multi-mode etch chamber source assembly
US8946023B2 (en) 2013-03-12 2015-02-03 Sandisk Technologies Inc. Method of making a vertical NAND device using sequential etching of multilayer stacks
US20140273451A1 (en) 2013-03-13 2014-09-18 Applied Materials, Inc. Tungsten deposition sequence
TWI591211B (zh) 2013-03-13 2017-07-11 應用材料股份有限公司 蝕刻包含過渡金屬的膜之方法
US9556507B2 (en) 2013-03-14 2017-01-31 Applied Materials, Inc. Yttria-based material coated chemical vapor deposition chamber heater
US9006106B2 (en) 2013-03-14 2015-04-14 Applied Materials, Inc. Method of removing a metal hardmask
US8946076B2 (en) 2013-03-15 2015-02-03 Micron Technology, Inc. Methods of fabricating integrated structures, and methods of forming vertically-stacked memory cells
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9276011B2 (en) 2013-03-15 2016-03-01 Micron Technology, Inc. Cell pillar structures and integrated flows
CN105142702A (zh) 2013-03-15 2015-12-09 皮博士研究所有限责任公司 一次性使用的针组件和方法
US9230819B2 (en) 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US20140308758A1 (en) 2013-04-10 2014-10-16 Applied Materials, Inc. Patterning magnetic memory
US20140311581A1 (en) 2013-04-19 2014-10-23 Applied Materials, Inc. Pressure controller configuration for semiconductor processing applications
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US20140342569A1 (en) 2013-05-16 2014-11-20 Applied Materials, Inc. Near surface etch selectivity enhancement
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9082826B2 (en) 2013-05-24 2015-07-14 Lam Research Corporation Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features
US10808317B2 (en) 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US9051655B2 (en) 2013-09-16 2015-06-09 Applied Materials, Inc. Boron ionization for aluminum oxide etch enhancement
US8980758B1 (en) 2013-09-17 2015-03-17 Applied Materials, Inc. Methods for etching an etching stop layer utilizing a cyclical etching process
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
JP6033496B2 (ja) 2013-11-06 2016-11-30 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 垂直ｎａｎｄ素子のための新規のマスク除去方法
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9330937B2 (en) 2013-11-13 2016-05-03 Intermolecular, Inc. Etching of semiconductor structures that include titanium-based layers
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US20150170943A1 (en) 2013-12-17 2015-06-18 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US20150170879A1 (en) 2013-12-17 2015-06-18 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US20150171008A1 (en) 2013-12-17 2015-06-18 GLOBAL FOUNDRIES Singapore Ptd. Ltd. Integrated circuits with dummy contacts and methods for producing such integrated circuits
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9111907B2 (en) 2014-01-02 2015-08-18 Globalfoundries Inc. Silicide protection during contact metallization and resulting semiconductor structures
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US20150214066A1 (en) 2014-01-27 2015-07-30 Applied Materials, Inc. Method for material removal in dry etch reactor
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
KR102175763B1 (ko) 2014-04-09 2020-11-09 삼성전자주식회사 반도체 메모리 장치 및 이의 제조 방법
US20150345029A1 (en) 2014-05-28 2015-12-03 Applied Materials, Inc. Metal removal
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US20150371865A1 (en) 2014-06-19 2015-12-24 Applied Materials, Inc. High selectivity gas phase silicon nitride removal
US20150371861A1 (en) 2014-06-23 2015-12-24 Applied Materials, Inc. Protective silicon oxide patterning
US20160005833A1 (en) 2014-07-03 2016-01-07 Applied Materials, Inc. Feol low-k spacers
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090191711A1 (en) * 2008-01-30 2009-07-30 Ying Rui Hardmask open process with enhanced cd space shrink and reduction
US20130020708A1 (en) * 2011-07-19 2013-01-24 SanDisk Technologies, Inc Copper Interconnects Separated by Air Gaps and Method of Making Thereof
US20130089988A1 (en) * 2011-10-07 2013-04-11 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination

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